DESIGN AND SIMULATION OF VANADIUM
DIOXIDE BASED METAMATERIAL ABSORBER
AT TERAHERTZ FREQUENCIES
Md.Omar Faruk
Department of Electrical and Electronic Engineering
RUET
Rajshahi, Bangladesh
omarfaruk1601082@gmail.com
A B M Arafat Hossain
Department of Electrical and Electronic Engineering
RUET
Rajshahi-6204, Bangladesh
arafatanik2012@gmail.com
Abstract—This work presents a simple model for a broadband
metamaterial absorber (MA) operating in the terahertz frequency
range, utilizing vanadium dioxide (V O2 ) as the phase transition
material. The structure comprises a circular split ring resonator
(CSRR) on top, a dielectric spacer (SiO2 ), and a copper reflector
acting as the metal substrate. The model is simulated and opti-
mized using CST Studio Suite 2021 with the Finite Integration
Technique. The simulation results demonstrate that the MMA
achieves absorption rates above 90% within a frequency range
of 2.95 THz to 6.12 THz, providing a bandwidth of 3.17 THz.
The absorptivity of the proposed structure can be dynamically
tuned from 2.3% to 100% by adjusting the conductivity of
V O2 , enabling the transition of V O2 from an insulating state
to a metallic state. Additionally, the model exhibits insensitiv-
ity to polarization. The proposed structure is validated using
the impedance matching theorem and interference cancellation
condition. The physical mechanism of the MMA is elucidated
by analyzing the electric field distribution at the resonance
frequency. Potential applications of this absorber include sensors,
modulation, imaging, terahertz filters, and more.
Index Terms—terahertz; metamaterial; Broadband; vanadium
dioxide; resonance
I. I NTRODUCTION
A periodic array of subwavelength-sized unit cells with
resonators that are engineered to have a negative refrac-
tive index is known as a metamaterial (MM). Metamaterial
provides some special characteristics that are not generally
found in natural materials. For these characteristics, they are
widely used in different applications like super lenses [1],
imaging [2], polarization controls [3], [4], sensors [5], clocking
[6], [7], metamaterial perfect absorbers (MPA) [8], [9], EM
stealth [10], [11], and so on. Since the metamaterial absorber
(MA) was first invented by Landy et al. in 2008 [12], that
frequency was in the microwave frequency range. Most of the
applications of MA are in the terahertz (THz) range (0.1 to 10
Identify applicable funding agency here. If none, delete this.
Dr. Abdul Khaleque
Department of Electrical and Electronic Engineering
RUET
Rajshahi-6204, Bangladesh
abdul.khaleque.eee@gmail.com
THz), especially future 6G wireless communication [13] and
security monitoring [14]. But for the wide development of MA,
a full spectrum of applications from terahertz to ultraviolet
were developed [15]–[18].
But a narrow bandwidth and low absorption peak create
a big problem. and there are many ways to increase the
bandwidth [19]–[24], but their fabrication process is too
much difficult. Another problem is that conventional absorbers
can’t be tuned dynamically once their structure is fabricated
which limits its practical applications. Therefore, some active
materials like photoconductive semiconductors, liquid crys-
tals, graphene, and phase-shifting materials (vanadium dioxide
(V O2 )) are used for developing metamaterial absorbers [25]–
[29].
Among them, V O2 is the best because of its large mod-
ulation depth and phase-changing characteristic between the
insulating to the metallic state by means of thermal, electrical,
or optical stimuli [30]. That’s why V O2 is widely used in
MA to tune the absorbance for producing broadband [31]–
[37]. Bai et al. designed a tunable V O2 based MA with Au
/ polyimide / V O2 / SiO2 sandwich nanostructure having
1.25 THz bandwidth over 90% absorption and a tunable range
of 15% to 96% but offering high cost and low bandwidth
[38]. Huang et al. proposed a dual bandwidth absorber with
a bandwidth of 0.77 THz and 0.88 THz having more than
80% absorption in the frequency range of 2.88-3.65 THz and
0.56-1.44 THz having a tunable range of 20% to 90% [39].
A composed model made of V O2 and graphene that provides
dual control absorption is proposed by Z. Zhou et al. In this
work, the absorption bandwidth over 90% absorption is 1.79
THz in the range of 1.29-3.08 THz [37]. Zian Li et al. achieved
a broadband MA from 1.33 to 2.43 THz with a bandwidth of
1.1 THz (absorption > 90%) having a complex structure [40].
Gevorgyan and co-workers describe a gold strips model with
a wide frequency range of 0.66 THz to 1.84 THz providing
a bandwidth of 1.18 THz and 0-100% tunable feature [41].
Although the performance of existing MA based on V O2 has
improved, there are some problems like narrow bandwidth,
complex structure, and high cost that needed to be solved.
In this paper, broadband THz dynamically tunable MA
composed of V O2 / SiO2 / Cu model is proposed and it
provides a very simple structure with adjustable absorption
from 3.5% to 100% while V O2 changes its conductivity from
2 × 102 to 2 × 105 S/m. More than 90% of the absorption is
achieved from 2.9 THz to 6.12 THz i.e., the bandwidth is 3.17
THz. Compared with the previous paper, we obtain a wider Fig. 2. The schematic top view of (a) Double ring with a slit in the outer
bandwidth with a very simple structure at a low cost because ring, (b) Double ring with two slits at the outer ring
of using copper as a bottom layer instead of gold bottom layer.
Moreover, The model is polarization-insensitive and incident TABLE I
angle insensitive of up to 600 . T HE GEOMETRICAL PARAMETERS OF THE CIRCULAR SLIT RING
RESONATORS

II. A BSORBER DESIGN AND SIMULATION Name Value (µm) Description

Three distinct models, such as a double ring with a slit p 30 Period of metasurface unit cell
h 8 Thickness of SiO2 layer
in each ring on the opposite side (Fig.1), a double ring r1 12 Radius of Ring 1
with a slit in the outer ring (Fig.2(b)), and a double ring r2 8 Radius of Ring 2
with two cuts at the outer ring (Fig.2(c)), have been created w 3 Width of V O2 ring
d 4 Slit width
with the same philosophy. Every design has three levels. To t Cu 2 Thickness of copper layer
make the structure adjustable, V O2 is used as the initial t VO2 0.2 Thickness of V O2 layer
layer. All of the designs have two rings with slits in various
places and numbers that act as electromagnetic resonators.
The intermediate layer is made up of SiO2 as a dielectric
spacer to boost the capacitance effect [], and instead of a gold σ 2
ωp2 (σ) = ω (σo ) (2)
layer, a copper plate is utilized as a bottom layer to reduce σo p
production costs. The proposed model’s period p is 30 um,
and the remaining parameters listed in Table 1 are optimized This work defines the V O2 conductivity as σ0 = 3 × 105
via parameter sweep. S/m and ωp (σ0 ) = 1.4 × 1015 rad/s. The conductivity of V O2
is increased from 10S/m to 2 × 105 S/m to switch its state
from insulator to conductor [44], [45]. The intermediate layer’s
dielectric constant is ϵr = 3.8 with tanδ = 0.027 being a loss
tangent, and the conductivity of the bottom layer is 5.8 × 107
S/m. This thesis employs computer simulation software that
utilizes the integration approach to simulate and analyze the in-
tended structure. The simulations program’s frequency domain
solver is responsible for examining the frequency-dependent
absorbance responses of the defined structure. During the sim-
ulations, appropriate conditions for boundaries are applied to
each design. The unit cell’s boundary conditions are set to the
x-and y-axes, while the z-axis (lateral direction) is set to open.
When an incoming wave reaches a metamaterial absorber, it
is split into three parts: reflection(R), transmission(T), and
Fig. 1. Double ring having a slit in each ring on the opposite side, (a) The
schematic top view, (b) Side view of the absorber absorption(A), and the relationship is

The Drude model assists in clarifying V O2 ’s optical char-

A(ω) = 1 − |R(ω)| − |T (ω)| = 1 − |S 11 |2 − |S 21 |2 (3)
acteristics [42], [43].
ωp2 where S 11 (ω) and S 21 (ω) indicate the reflection and trans-
ϵ(ω) = ϵ∞ − (1) mission coefficients respectively. The concept suggests that
(ω 2 + iγ)
in order to achieve optimum absorptance, the reflection plus
Where ϵ∞ and γ indicate high- frequencies permeability and transmission should trend to zero. T = 0 is the easiest to
13
collision frequency are 12 and 5.75 × 10 rad/s respectively, obtain by using a thick metal sheet. This is due to the fact
and plasma frequency ϵ(ω) may be described as that the thickness of the metal sheet is substantially more
than its skin’s depth. The wave that is transmitted will be
entirely localized on the top layer of the metal sheet, which
is comparable to blocking wave transmission and resulting in
T=0. As a result, the above equation may be reduced to A = 1-
|S 11 |2 . As a result, the absorption is entirely determined by the
parameter S11 . By modifying the geometrical parameters, the
absorber’s impedance may be matched to that of free space,
resulting in maximum absorption.
III. R ESULTS AND D ISCUSSION
In fig.3 the circular slit ring resonator (01) shows the
reflection and absorption spectrum, where the V O2 is used as
Fig. 5. The absorption and reflection spectrum of (a) the circular slit ring
metal with high conductivity of 2 × 105 S/m. From the figure, resonator (03)
we can notice that the 90% absorption with the bandwidth
of 2.52 THz started from 2.86 to 5.4 THz and the central
frequency is 4.05 THz. varied and the absorption spectrums were observed. The
tunable parameters are given below:
• Conductivity of V O2 (σ)
• Thickness of SiO2 (h)
• Inner Ring Radius (r2)
• Outer Ring Radius (r1)
• Width of Rings(w)
• Width of Slit (d)

B. Conductivity of V O2
The absorber’s absorption spectrum undergoes changes
Fig. 3. The absorption and reflection spectrum of the circular slit ring corresponding to the variation in the conductivity of V O2 ,
resonator (01) ranging from 10 S/m to 2 × 105 S/m. As the conductivity
increases, the absorbance also increases, going from 2.3% to
100%. Interestingly, despite the changes in conductivity, the
central frequency of absorption remains relatively unchanged.
This phenomenon can be attributed to the fluctuations in the
permittivity of VO2 caused by the changes in conductivity.
These results indicate that the absorber can be reconfigured
by actively managing V O2 , allowing for adjustments in its
electrical [46] or thermal [46]characteristics.

Fig. 4. The absorption and reflection spectrum of (a) the circular slit ring
resonator (02)

TABLE II
T HE PERFORMANCE ANALYSIS OF THE THREE V O2 BASED ABSORBERS

Model Frequency of 90% Absorption Peak Absorption Frequency f central

NO f min (T Hz) f max (T Hz) BW(THz) f p1 (T Hz) f p2 (T Hz) (THz) Fig. 6. Absorption spectrum with different conductivity (σ) of V O2
01 2.862 5.375 2.51 3.394 4.71 4.05
02 2.981 6.138 3.157 3.429 5.802 4.62
03 2.946 6.117 3.171 3.373 5.858 4.62
C. Thickness of SiO2 (h)
Figure 7 illustrates the relationship between absorption and
A. Parameters Sweep the thickness of the dielectric layer (SiO2 ). The absorber
The three models were simulated, but parameters were structure with a dielectric thickness of h = 8 µm corresponds to
swept only for model no:03. The tunable parameters were a central frequency that corresponds to a wavelength of 64.935
µm in free space. The dielectric layer possesses a refractive
index, resulting in a wavelength of 33.31 µm. The absorber’s
physical mechanism can be explained by the interference
cancellation principle, which states that when the dielectric
thickness is approximately 8 µm (nearly equal to 1/4 of the
center wavelength of 33.31 µm), it satisfies the condition for
interference cancellation between the incident and reflected
waves within the dielectric layer. Consequently, when the
dielectric layer thickness is 8 µm, the absorber exhibits a
significant absorption effect.
Fig. 7. The variation of absorption with respect to thickness (h) of SiO2
D. Inner Ring Radius (r2)
In Figure 8, it is observed that the absorption efficiency
rises as the inner ring radius increases. Additionally, the
bandwidth of absorption expands with an increase in the
radius of the inner ring. The first peak experiences a blue
shift, indicating a shift towards shorter wavelengths, while the
second peak remains relatively stable. This shift is attributed to
the increase in the coupling effect as the inner radius expands.
As the capacitance increases due to the larger inner radius, the
peak frequency decreases, resulting in a resonance condition.
Consequently, the bandwidth of absorption widens. However,
when the radius of the inner ring (r2) reaches 10 µm, it
overlaps with the outer ring, causing a loss in the coupling
effect and a subsequent decrease in the absorption efficiency.
Fig. 8. The effect of the inner ring radius (r2) on the absorption spectrum
E. Outer Ring Radius (r1)
Figure 9 illustrates that the absorption bandwidth of the
absorber expands as the radius of the outer ring (r1) increases.
However, there is a trade-off as the total absorption efficiency
decreases. This decrease in efficiency is attributed to a weak-
ening of the coupling effect between the outer and middle
rings. The first peak of the absorption spectrum experiences
a blue shift, indicating a shift towards shorter wavelengths,
while the second peak remains mostly unchanged.
Fig. 9. The effect of the outer ring radius (r1) on the absorption spectrum
F. Width of Rings (w)
In Figure 10, it can be observed that as the width of
the absorber increases, the absorption bandwidth improves.
However, there is a decrease in the total absorption efficiency.
Additionally, the absorption spectra transition from single-
peak absorption to double-peak absorption, resulting in a
significant increase in the overall absorption bandwidth.
Fig. 10. The influence of the width of rings (w) on the absorption spectrum
G. Width of Slit (d)
In Figure 11, it is observed that the absorption bandwidth of
the absorber decreases as the slit widens. However, there is an
improvement in the overall absorption efficiency. The first peak
of the absorption spectrum experiences a blue shift, indicating
a shift towards shorter wavelengths, while the second peak
remains mostly unchanged. However, when the slit width is
set to 0 µm, a portion of the coupling effect is lost, leading to
a decrease in the absorption efficiency.
H. Electric Field Distribution
The horizontal and vertical electric field distributions of the
absorber at two absorption peaks centered at 3.37 THz and
Fig. 11. The influence of the width of slit (d) on the absorption spectrum
Fig. 12. The top view’s electric field distribution at (a) 3.37 THz and (b)
5.87 THz in the horizontal direction, and (c) 3.37 THz and (d) 5.87 THz in
the vertical direction.
5.87 THz are shown in Figure 12. The horizontal electric
field at the first peak in Figure 12(a) is uniformly distributed
across the slit ring and the outside and inside of the outer
and inner rings. Figure 12(b), on the other hand, illustrates
that the horizontal electric field is largely concentrated in the
region between the ring’s slits at the second peak, with minor
dispersion between the outside and inside of the outer and
inner rings.
Figure 12(c) and (d) show the vertical electric field distri-
bution of the absorber.The vertical electric field distribution
at the two frequency peaks is comparable to the horizontal
distribution but is 90 degrees shifted. The electric field is
concentrated predominantly between the rings.Based on this
information, the electric field distribution of the absorber is
largely determined by the coupling effect between the rings
and slits, as well as the presence of two separate absorption
peaks. This coupling mechanism contributes to the absorber’s
broad absorption spectrum. As a result, the multi-resonant ring
structure is beneficial in the construction of ultra-wideband
absorbers.
I. Absorption under Various Incident Angles
In practical applications, the absorber’s effectiveness is
determined by its ability to exhibit a significant absorption
effect at large angles of incidence. The multi-resonant ring
structure of the absorber ensures that its unit structure is
Fig. 13. (a) Absorption spectra at various incidence angles (b) Absorption
spectrum color diagram with various polarization angles
isotropic, meaning it demonstrates the same angle absorption
effect under two polarization conditions.
Up to an incidence angle of 60°, the absorber maintains an
absorption rate higher than 75%. However, as the incidence
angle increases beyond 60°, the absorption rate decreases
significantly while the bandwidth expands. These findings
highlight that the absorber possesses a strong ability to absorb
at large angles and maintains consistent absorption perfor-
mance regardless of polarization.
IV. P OLARIZATION I NSENSITIVITY
In Figure 13(b), the absorber’s absorption intensity is de-
picted for different polarization angles spanning from 0° to
90°. The figure illustrates that the absorber exhibits polar-
ization insensitivity, meaning its absorption intensity remains
relatively consistent across various polarization angles. This
attribute can be attributed to the symmetric design of the
absorber, which ensures that the absorber’s performance is
independent of the orientation of the incident polarization.
V. C OMPARISON WITH THE T HEORY
The perfect absorption phenomenon exhibited by the ab-
sorber can also be explained using the impedance matching
theory. In this theory, the effective impedance of the meta-
material Perfect Absorber (MPA) can be determined using
the effective permittivity (ϵ) and effective permeability (µ)
retrieved from [61] as.
r s
µ (1 + S 11 )2 − S 21 2
Z= = (4)
ϵ (1 − S 11 )2 − S 21 2
when the effective permittivity and effective permeability of
the absorber are equal to that of free space, the reflection
is minimized and approaches zero. From simulated complex
S-parameters, the real parts of the impedance can be easily
calculated and are plotted in fig. 14. In the case of V O2
conductivity of 2 × 105 S/m, the real parts of the impedance
are near 1 within the frequency range of 2.37 THz to 5.87
THz. This indicates that the impedance of the absorber closely
matches that of free space, satisfying the design requirements
for a perfect absorber.

Fig. 14. The relative impedance in conductivity of 2 × 105 S/m for V O2
VI. C ONCLUSIONS
This study presents the design, simulation, and verification
of a dynamically tunable broadband metamaterial absorber
operating in the THz frequency range. The absorbance of the
absorber can be easily adjusted by varying several parameters,
including the conductivity of V O2 , the thickness of SiO2 ,
inner and outer ring radii, the width of rings, and the width
of the slit. The absorber demonstrates wideband operation and
offers a bandwidth of 3.16 THz (ranging from 2.98 THz to
6.14 THz) for 90% absorbance under normal incident angles
with a very simple design.
By altering the conductivity of V O2 , the absorbance can be
adjusted from 2.3% to 100%. Both wave-interference theory
and impedance matching theory may be used to describe
the physical process of full absorption. According to the
electric field distribution study, the absorption is caused by
the connection between the slit and nearby rings.
The dynamically tunable broadband metamaterial absorber
holds great potential for various applications in the THz range,
such as absorbers, security systems, biological imaging, po-
larization converters, future sixth-generation wireless network
development, sensors, modulators, and notably, for reducing
radar cross-section (RCS).
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