DESIGN AND SIMULATION OF VANADIUM
DIOXIDE BASED METAMATERIAL ABSORBER
AT THz FREQUENCIES
Md.Omar Faruk
Department of Electrical and Electronic Engineering
RUET
Rajshahi, Bangladesh
omarfaruk1601082@gmail.com
A B M Arafat Hossain
Department of Electrical and Electronic Engineering
RUET
Rajshahi-6204, Bangladesh
arafatanik2012@gmail.com
Abstract—This work presents a simple model for a broadband
metamaterial absorber (MMA) operating in the terahertz fre-
quency range, utilizing V O2 as the phase transition material.
The structure comprises a circular split ring resonator (CSRR)
on top, a dielectric spacer (SiO2 ), and a copper reflector acting as
the metal substrate. The model is simulated and optimized using
CST Studio Suite 2021 with the Finite Integration Technique.The
simulation results demonstrate that the MMA achieves absorp-
tion rates above 90% within a frequency range of 2.946 THz to
6.117 THz, providing a bandwidth of 3.171 THz. The absorptivity
of the proposed structure can be dynamically tuned from 3.5%
to 100% by adjusting the conductivity of V O2 , enabling the
transition of V O2 from an insulating state to a metallic state.
Additionally, the model exhibits insensitivity to polarization
and incident angle.The proposed structure is validated using
the impedance matching theorem and interference cancellation
condition. The physical mechanism of the MMA is elucidated
by analyzing the electric field distribution at the resonance
frequency. Potential applications of this absorber include sensors,
modulation, imaging, terahertz filters, and more.
Index Terms—terahertz; metamaterial; Broadband; vanadium
dioxide; resonance
I. I NTRODUCTION
A periodic array of subwavelength-sized unit cells with
resonators that are engineered to have a negative refractive
index is known as a metamaterial (MM). Metamaterial pro-
vides some special characteristics that are not generally found
in natural materials. For these characteristics, they are widely
used in different applications like super lenses [1], imaging
[2], polarization controls [3], [4], sensors [5], clocking [6],
[7], metamaterial perfect absorbers (MPA) [8], [9], EM stealth
[10], [11], and so on. Since the metamaterial absorber (MA)
was first invented by Landy in 2008 [12], that frequency was
in the microwave frequency range. Most of the applications of
MA are in the terahertz (THz) range (0.1 to 10 THz) especially
Identify applicable funding agency here. If none, delete this.
Dr. Abdul Khaleque
Department of Electrical and Electronic Engineering
RUET
Rajshahi-6204, Bangladesh
abdul.khaleque.eee@gmail.com
future 6G wireless communication [13], and security monitor-
ing [14]. But for the wide development of MA, a full spectrum
of applications from terahertz to ultraviolet were developed
[15]–[18].
But a narrow bandwidth and low absorption peak create a
big problem. There are many ways to increase the bandwidth
[19]–[24], but their fabrication process is too much difficult.
Another problem is that conventional absorbers can’t be tuned
dynamically once their structure is fabricated that’s limits its
practical applications. Therefore, some active materials like
photoconductive semiconductors, liquid crystals, graphene,
and phase-shifting materials (vanadium dioxide (V O2 )) are
used for developing metamaterial absorbers [25]–[29].
Among them, V O2 is best because of its large modulation
depth and phase-changing characteristic between the insulating
to the metallic state by means of thermal, electrical, or optical
stimuli. That’s why V O2 is widely used in MA to tune the
absorbance for producing broadband [30]–[36]. Bai et al.
designed a tunable V O2 MA with Au / polyimide / V O2
/ SiO2 sandwich nanostructure having 1.25 THz bandwidth
over 90% absorption and a tunable range of 15% to 96%
but offering high cost and low bandwidth [37]. Huang et al.
proposed a dual bandwidth absorber with a bandwidth of 0.77
THz and 0.88 THz having more than 80% absorption in the
frequency range of 2.88-3.65 THz and 0.56-1.44 THz having
a tunable range of 20% to 90% [38]. Z. Zhou et al. designed
a composed model made of V O2 and graphene that provides
absorption with dual control. The absorption bandwidth over
90% absorption is 1.79 THz in the range of 1.29-3.08 THz
[36]. Zian Li et al. achieved a broadband MA from 1.33 to
2.43 THz with a bandwidth of 1.1 THz (absorption > 90%)
having a complex structure [39]. Gevorgyan and co-workers
describe a gold strips model with a wide frequency range of
0.66 THz to 1.84 THz providing a bandwidth of 1.18 THz
and 0-100% tunable feature [40]. Although the performance
of existing MA based on V O2 has improved, there are some
problems like narrow bandwidth, complex structure, and high
cost that needed to be solved.
In this paper, broadband THz dynamically tunable com-
posed of V O2 / SiO2 / Cu model is proposed. It provides
a very simple structure with adjustable absorption from 3.5%
to 100% while V O2 changes its conductivity from 2 × 102 to
2 × 105 S/m. More than 90% of the absorption is achieved
from 2.9 THz to 6.12 THz i.e., the bandwidth is 3.38 THz.
Compared with the previous paper, we obtain a wider band-
width with a very simple structure at a low cost because of Fig. 2. The schematic top view of (a) Circular slit ring resonator (02), (b)
using the copper bottom layer instead of gold bottom layer. Circular slit ring resonator (03)
The model is polarization-insensitive and incident angle of up
to 600 . TABLE I
T HE GEOMETRICAL PARAMETERS OF THE CIRCULAR SLIT RING
RESONATORS
II. A BSORBER DESIGN AND SIMULATION
Our investigation focuses exclusively on the circular ring Name Value (µm) Description
design, which comprises two V O2 resonance rings positioned p 30 Period of metasurface unit cell
on the top surface. A metal layer (copper) acts as the ground h 8 Thickness of SiO2 layer
layer, and it is separated from the rings by a dielectric separator r1 12 Radius of Ring 1
r2 8 Radius of Ring 2
made of SiO2 . We have developed three distinct models to w 3 Width of V O2 ring
have an optimized structure having the best performance. d 4 Slit width
The unit cell of our ultra-wideband THz absorber, as shown t Cu 2 Thickness of copper layer
t VO2 0.2 Thickness of V O2 layer
in Figure 1, consists of two V O2 resonance rings that are Theta 0 incident angle (Theta)
separated by a dielectric spacer. The period of the unit cell is Phi 0 Polarization Angle(Phi)
p= 30 µm. The uppermost layer of V O2 has a thickness of Gm 5.75 × 1013 Collision Frequency of V O2 Drude model
0.2 µm. In fig.1(a), the top layer design is depicted, featuring Sg 2 × 105 Electrical conductivity of V O2
sg0 3 × 105 Related to V O2 Drude model
two evenly spaced rings with varying diameters. The outer
wp0 1.4 × 1015 Related to V O2 Drude model
and inner circle radii are denoted as r1 = 12 µm and r2 wp (sg × wp0 2 /sg0 )0.5 Plasma Frequency of V O2 Drude model
= 8 µm, respectively. All the rings have a width of w = 3
µm. The intermediate dielectric layer between the two V O2
resonance rings is composed of silicon dioxide (SiO2 ) and has
a thickness of 9 µm. It possesses a relative dielectric constant domain solver is responsible for examining the frequency-
ϵSiO2 = 3.8. At the lowermost layer, which is in contact with dependent absorption response of the specified structure. Suit-
the dielectric layer, consists of copper (a lossy metal) and has able boundary conditions are applied for each design during
a thickness of 0.2 µm. the simulations. Generally, the boundary conditions are de-
signed to be periodic in the x and y dimensions, while the
z-direction (lateral direction) has open borders.
The optical properties of V O2 within the THz range [41],
[42] are described using the Drude model, which can be
expressed as follows

ωp2
ϵ(ω) = ϵ∞ − (1)
(ω 2 + iγ)
where, ϵ∞ = 12 represents dielectric permittivity at the high
frequency and γ = 5.75 × 1013 rad/s represents the collision
frequency. The plasma frequency ϵ(ω) and conductivity σ have
the following relationship given bellow :
σ 2
ωp2 (σ) = ω (σo ) (2)
Fig. 1. Circular slit ring resonator (01), (a) The schematic top view, (b) Side σo p
view of the absorber
The conductivity of V O2 in this study is characterized by σ0 =
This work employs computer simulation software that uti- 3 × 105 S/m and ωp (σ0 ) = 1.4 × 1015 rad/s. It is observed that
lizes the finite integration approach to simulate and analyze when V O2 undergoes a transition from the insulator phase to
the intended structure. The simulation program’s frequency the metal phase, its conductivity changes from 200 S/m to 2 ×
105 S/m [43], [44]. Due to the fact that the thickness of the Cu TABLE II
metal ground plane exceeds the skin depth, the transmittance T HE FREQUENCY ANALYSIS OF THE ABOVE MODELS
T(ω) is zero. Consequently, absorbance A(ω) is calculated.
Model Frequency of 90% Absorption Peak Absorption Frequency f central
NO f min (T Hz) f max (T Hz) BW(THz) f p1 (T Hz) f p2 (T Hz) (THz)
A(ω) = 1 − |R(ω)| = 1 − |S 11 |2 (3) 01 2.862 5.375 2.51 3.394 4.71 4.05
02 2.981 6.138 3.157 3.429 5.802 4.62
03 2.946 6.117 3.171 3.373 5.858 4.62
where R(ω) means reflectance and S 11 |(ω) show the reflection
coefficient

A. Parameters Sweep
III. R ESULTS AND D ISCUSSION
The three models were simulated, but parameters were
In fig.3 the circular slit ring resonator (01) shows the swept only for model no:03. The tunable parameters were
reflection and absorption spectrum, where the V O2 is used as varied and the absorption spectrums were observed. The
metal with high conductivity of 2 × 105 S/m. From the figure, tunable parameters are given below:
we can notice that the 90% absorption with the bandwidth • Conductivity of V O2 (σ)
of 2.52 THz started from 2.86 to 5.4 THz and the central • Thickness of SiO2 (h)
frequency is 4.05 THz. • Inner Ring Radius (r2)
• Outer Ring Radius (r1)
• Width of Rings(w)
• Width of Slit (d)

B. Conductivity of V O2
The absorber’s absorption spectrum undergoes changes
corresponding to the variation in the conductivity of V O2 ,
ranging from 200 S/m to 2 × 105 S/m. As the conductivity
increases, the absorbance also increases, going from 3.5% to
100%. Interestingly, despite the changes in conductivity, the
Fig. 3. The absorption and reflection spectrum of the circular slit ring central frequency of absorption remains relatively unchanged.
resonator (01) This phenomenon can be attributed to the fluctuations in the
permittivity of VO2 caused by the changes in conductivity.
These results indicate that the absorber can be reconfigured
by actively managing V O2 , allowing for adjustments in its
electrical [45] or thermal [45]characteristics.

Fig. 4. The absorption and reflection spectrum of (a) the circular slit ring
resonator (02)

Fig. 6. Absorption spectrum with different conductivity (σ) of V O2

C. Thickness of SiO2 (h)

Fig. 5. The absorption and reflection spectrum of (a) the circular slit ring
resonator (03)
Figure 7 illustrates the relationship between absorption and
the thickness of the dielectric layer (SiO2 ). The absorber
structure with a dielectric thickness of h = 8 µm corresponds to
a central frequency that corresponds to a wavelength of 64.935
µm in free space. The dielectric layer possesses a refractive
index, resulting in a wavelength of 33.31 µm. The absorber’s
physical mechanism can be explained by the interference
cancellation principle, which states that when the dielectric
thickness is approximately 8 µm (nearly equal to 1/4 of the
center wavelength of 33.31 µm), it satisfies the condition for
interference cancellation between the incident and reflected
waves within the dielectric layer. Consequently, when the
dielectric layer thickness is 8 µm, the absorber exhibits a
significant absorption effect.
Fig. 7. The variation of absorption with respect to thickness (h) of SiO2
D. Inner Ring Radius (r2)
In Figure 8, it is observed that the absorption efficiency
rises as the inner ring radius increases. Additionally, the
bandwidth of absorption expands with an increase in the
radius of the inner ring. The first peak experiences a blue
shift, indicating a shift towards shorter wavelengths, while the
second peak remains relatively stable. This shift is attributed to
the increase in the coupling effect as the inner radius expands.
As the capacitance increases due to the larger inner radius, the
peak frequency decreases, resulting in a resonance condition.
Consequently, the bandwidth of absorption widens. However,
when the radius of the inner ring (r2) reaches 10 µm, it
overlaps with the outer ring, causing a loss in the coupling
effect and a subsequent decrease in the absorption efficiency.
Fig. 8. The effect of the inner ring radius (r2) on the absorption spectrum
E. Outer Ring Radius (r1)
Figure 9 illustrates that the absorption bandwidth of the
absorber expands as the radius of the outer ring (r1) increases.
However, there is a trade-off as the total absorption efficiency
decreases. This decrease in efficiency is attributed to a weak-
ening of the coupling effect between the outer and middle
rings. The first peak of the absorption spectrum experiences
a blue shift, indicating a shift towards shorter wavelengths,
while the second peak remains mostly unchanged.
Fig. 9. The effect of the outer ring radius (r1) on the absorption spectrum
F. Width of Rings (w)
In Figure 10, it can be observed that as the width of
the absorber increases, the absorption bandwidth improves.
However, there is a decrease in the total absorption efficiency.
Additionally, the absorption spectra transition from single-
peak absorption to double-peak absorption, resulting in a
significant increase in the overall absorption bandwidth.
Fig. 10. The influence of the width of rings (w) on the absorption spectrum
G. Width of Slit (d)
In Figure 11, it is observed that the absorption bandwidth of
the absorber decreases as the slit widens. However, there is an
improvement in the overall absorption efficiency. The first peak
of the absorption spectrum experiences a blue shift, indicating
a shift towards shorter wavelengths, while the second peak
remains mostly unchanged. However, when the slit width is
set to 0 µm, a portion of the coupling effect is lost, leading to
a decrease in the absorption efficiency.
 H. Electric Field Distribution
The horizontal and vertical electric field distributions of the
absorber at two absorption peaks centered at 3.37 THz and
5.87 THz are shown in Figure 12. The horizontal electric
field at the first peak in Figure 12(a) is uniformly distributed
across the slit ring and the outside and inside of the outer
and inner rings. Figure 12(b), on the other hand, illustrates
that the horizontal electric field is largely concentrated in the
region between the ring’s slits at the second peak, with minor
dispersion between the outside and inside of the outer and
inner rings.
Figure 12(c) and (d) show the vertical electric field distri-
bution of the absorber.The vertical electric field distribution
at the two frequency peaks is comparable to the horizontal
distribution but is 90 degrees shifted. The electric field is
concentrated predominantly between the rings.Based on this
information, the electric field distribution of the absorber is
largely determined by the coupling effect between the rings
and slits, as well as the presence of two separate absorption
Fig. 11. The influence of the width of slit (d) on the absorption spectrum peaks. This coupling mechanism contributes to the absorber’s
broad absorption spectrum. As a result, the multi-resonant ring
structure is beneficial in the construction of ultra-wideband
absorbers.

Fig. 13. (a) Absorption spectra at various incidence angles (b) Absorption
spectrum color diagram with various polarization angles

I. Absorption under Various Incident Angles

In practical applications, the absorber’s effectiveness is
determined by its ability to exhibit a significant absorption
effect at large angles of incidence. The multi-resonant ring
structure of the absorber ensures that its unit structure is
isotropic, meaning it demonstrates the same angle absorption
effect under two polarization conditions.
Up to an incidence angle of 60°, the absorber maintains an
absorption rate higher than 75%. However, as the incidence
angle increases beyond 60°, the absorption rate decreases
significantly while the bandwidth expands. These findings
highlight that the absorber possesses a strong ability to absorb
at large angles and maintains consistent absorption perfor-
mance regardless of polarization.
Fig. 12. The top view’s electric field distribution at (a) 3.37 THz and (b)
5.87 THz in the horizontal direction, and (c) 3.37 THz and (d) 5.87 THz in
the vertical direction. IV. P OLARIZATION I NSENSITIVITY
In Figure 13(b), the absorber’s absorption intensity is de-
picted for different polarization angles spanning from 0° to
90°. The figure illustrates that the absorber exhibits polar-
ization insensitivity, meaning its absorption intensity remains
relatively consistent across various polarization angles. This
attribute can be attributed to the symmetric design of the
absorber, which ensures that the absorber’s performance is
independent of the orientation of the incident polarization.
V. C OMPARISON WITH THE T HEORY
The perfect absorption phenomenon exhibited by the ab-
sorber can also be explained using the impedance matching
theory. In this theory, the effective impedance of the Meta-
material Perfect Absorber (MPA) can be determined using
the effective permittivity (ϵ) and effective permeability (µ)
retrieved from [61].
s vol. 26, no. 13, pp. 16265–16276, 2018.
r [2] B. Casse, W. Lu, Y. Huang, E. Gultepe, L. Menon, and S. Srid-
µ (1 + S 11 )2 − S 21 2
Z= = (4)
ϵ (1 − S 11 )2 − S 21 2
When the effective permittivity and effective permeability
of the absorber are equal to that of free space, the reflection
is minimized and approaches zero. From simulated complex
Fig. 14. The relative impedance in conductivity of 2 × 105 S/m for V O2
S-parameters, the real parts of the impedance can be easily
calculated and are plotted in Figure 20. In the case of V O2
conductivity of 2 × 105 S/m, the real parts of the impedance
are near to 1 within the frequency range of 2.37 THz to 5.87
THz. This indicates that the impedance of the absorber closely
matches that of free space, satisfying the design requirements
for a perfect absorber.
VI. C ONCLUSIONS
This study presents the design, simulation, and verification
of a dynamically tunable broadband metamaterial absorber
operating in the THz frequency range. The absorbance of the
absorber can be easily adjusted by varying several parameters,
including the conductivity of V O2 , the thickness of SiO2 ,
inner and outer ring radii, the width of rings, and width of
the slit. The absorber demonstrates wideband operation and
offers a bandwidth of 3.16 THz (ranging from 2.98 THz to
6.14 THz) for 90% absorbance under normal incident angles
with a very simple design.
By altering the conductivity of V O2 , the absorbance can be
adjusted from 3.5% to 100%. Both wave-interference theory
and impedance matching theory may be used to describe
the physical process of full absorption. According to the
electric field distribution study, the absorption is caused by
the connection between the slit and nearby rings.
The dynamic tunable broadband metamaterial absorber
holds great potential for various applications in the THz range,
such as absorbers, security systems, biological imaging, po-
larization converters, future sixth-generation wireless network
development, sensors, modulators, and notably, for reducing
radar cross-section (RCS).
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