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Metamaterial Absorber by VO2-4
Metamaterial Absorber by VO2-4
Metamaterial Absorber by VO2-4
A B M Arafat Hossain
Department of Electrical and Electronic Engineering
RUET
Rajshahi-6204, Bangladesh
arafatanik2012@gmail.com
Abstract—This work presents a simple model for a broadband future 6G wireless communication [13], and security monitor-
metamaterial absorber (MMA) operating in the terahertz fre- ing [14]. But for the wide development of MA, a full spectrum
quency range, utilizing V O2 as the phase transition material. of applications from terahertz to ultraviolet were developed
The structure comprises a circular split ring resonator (CSRR)
on top, a dielectric spacer (SiO2 ), and a copper reflector acting as [15]–[18].
the metal substrate. The model is simulated and optimized using But a narrow bandwidth and low absorption peak create a
CST Studio Suite 2021 with the Finite Integration Technique.The big problem. There are many ways to increase the bandwidth
simulation results demonstrate that the MMA achieves absorp- [19]–[24], but their fabrication process is too much difficult.
tion rates above 90% within a frequency range of 2.946 THz to Another problem is that conventional absorbers can’t be tuned
6.117 THz, providing a bandwidth of 3.171 THz. The absorptivity
of the proposed structure can be dynamically tuned from 3.5% dynamically once their structure is fabricated that’s limits its
to 100% by adjusting the conductivity of V O2 , enabling the practical applications. Therefore, some active materials like
transition of V O2 from an insulating state to a metallic state. photoconductive semiconductors, liquid crystals, graphene,
Additionally, the model exhibits insensitivity to polarization and phase-shifting materials (vanadium dioxide (V O2 )) are
and incident angle.The proposed structure is validated using used for developing metamaterial absorbers [25]–[29].
the impedance matching theorem and interference cancellation
condition. The physical mechanism of the MMA is elucidated Among them, V O2 is best because of its large modulation
by analyzing the electric field distribution at the resonance depth and phase-changing characteristic between the insulating
frequency. Potential applications of this absorber include sensors, to the metallic state by means of thermal, electrical, or optical
modulation, imaging, terahertz filters, and more. stimuli. That’s why V O2 is widely used in MA to tune the
Index Terms—terahertz; metamaterial; Broadband; vanadium absorbance for producing broadband [30]–[36]. Bai et al.
dioxide; resonance
designed a tunable V O2 MA with Au / polyimide / V O2
I. I NTRODUCTION / SiO2 sandwich nanostructure having 1.25 THz bandwidth
over 90% absorption and a tunable range of 15% to 96%
A periodic array of subwavelength-sized unit cells with
but offering high cost and low bandwidth [37]. Huang et al.
resonators that are engineered to have a negative refractive
proposed a dual bandwidth absorber with a bandwidth of 0.77
index is known as a metamaterial (MM). Metamaterial pro-
THz and 0.88 THz having more than 80% absorption in the
vides some special characteristics that are not generally found
frequency range of 2.88-3.65 THz and 0.56-1.44 THz having
in natural materials. For these characteristics, they are widely
a tunable range of 20% to 90% [38]. Z. Zhou et al. designed
used in different applications like super lenses [1], imaging
a composed model made of V O2 and graphene that provides
[2], polarization controls [3], [4], sensors [5], clocking [6],
absorption with dual control. The absorption bandwidth over
[7], metamaterial perfect absorbers (MPA) [8], [9], EM stealth
90% absorption is 1.79 THz in the range of 1.29-3.08 THz
[10], [11], and so on. Since the metamaterial absorber (MA)
[36]. Zian Li et al. achieved a broadband MA from 1.33 to
was first invented by Landy in 2008 [12], that frequency was
2.43 THz with a bandwidth of 1.1 THz (absorption > 90%)
in the microwave frequency range. Most of the applications of
having a complex structure [39]. Gevorgyan and co-workers
MA are in the terahertz (THz) range (0.1 to 10 THz) especially
describe a gold strips model with a wide frequency range of
Identify applicable funding agency here. If none, delete this. 0.66 THz to 1.84 THz providing a bandwidth of 1.18 THz
and 0-100% tunable feature [40]. Although the performance
of existing MA based on V O2 has improved, there are some
problems like narrow bandwidth, complex structure, and high
cost that needed to be solved.
In this paper, broadband THz dynamically tunable com-
posed of V O2 / SiO2 / Cu model is proposed. It provides
a very simple structure with adjustable absorption from 3.5%
to 100% while V O2 changes its conductivity from 2 × 102 to
2 × 105 S/m. More than 90% of the absorption is achieved
from 2.9 THz to 6.12 THz i.e., the bandwidth is 3.38 THz.
Compared with the previous paper, we obtain a wider band-
width with a very simple structure at a low cost because of Fig. 2. The schematic top view of (a) Circular slit ring resonator (02), (b)
using the copper bottom layer instead of gold bottom layer. Circular slit ring resonator (03)
The model is polarization-insensitive and incident angle of up
to 600 . TABLE I
T HE GEOMETRICAL PARAMETERS OF THE CIRCULAR SLIT RING
RESONATORS
II. A BSORBER DESIGN AND SIMULATION
Our investigation focuses exclusively on the circular ring Name Value (µm) Description
design, which comprises two V O2 resonance rings positioned p 30 Period of metasurface unit cell
on the top surface. A metal layer (copper) acts as the ground h 8 Thickness of SiO2 layer
layer, and it is separated from the rings by a dielectric separator r1 12 Radius of Ring 1
r2 8 Radius of Ring 2
made of SiO2 . We have developed three distinct models to w 3 Width of V O2 ring
have an optimized structure having the best performance. d 4 Slit width
The unit cell of our ultra-wideband THz absorber, as shown t Cu 2 Thickness of copper layer
t VO2 0.2 Thickness of V O2 layer
in Figure 1, consists of two V O2 resonance rings that are Theta 0 incident angle (Theta)
separated by a dielectric spacer. The period of the unit cell is Phi 0 Polarization Angle(Phi)
p= 30 µm. The uppermost layer of V O2 has a thickness of Gm 5.75 × 1013 Collision Frequency of V O2 Drude model
0.2 µm. In fig.1(a), the top layer design is depicted, featuring Sg 2 × 105 Electrical conductivity of V O2
sg0 3 × 105 Related to V O2 Drude model
two evenly spaced rings with varying diameters. The outer
wp0 1.4 × 1015 Related to V O2 Drude model
and inner circle radii are denoted as r1 = 12 µm and r2 wp (sg × wp0 2 /sg0 )0.5 Plasma Frequency of V O2 Drude model
= 8 µm, respectively. All the rings have a width of w = 3
µm. The intermediate dielectric layer between the two V O2
resonance rings is composed of silicon dioxide (SiO2 ) and has
a thickness of 9 µm. It possesses a relative dielectric constant domain solver is responsible for examining the frequency-
ϵSiO2 = 3.8. At the lowermost layer, which is in contact with dependent absorption response of the specified structure. Suit-
the dielectric layer, consists of copper (a lossy metal) and has able boundary conditions are applied for each design during
a thickness of 0.2 µm. the simulations. Generally, the boundary conditions are de-
signed to be periodic in the x and y dimensions, while the
z-direction (lateral direction) has open borders.
The optical properties of V O2 within the THz range [41],
[42] are described using the Drude model, which can be
expressed as follows
ωp2
ϵ(ω) = ϵ∞ − (1)
(ω 2 + iγ)
where, ϵ∞ = 12 represents dielectric permittivity at the high
frequency and γ = 5.75 × 1013 rad/s represents the collision
frequency. The plasma frequency ϵ(ω) and conductivity σ have
the following relationship given bellow :
σ 2
ωp2 (σ) = ω (σo ) (2)
Fig. 1. Circular slit ring resonator (01), (a) The schematic top view, (b) Side σo p
view of the absorber
The conductivity of V O2 in this study is characterized by σ0 =
This work employs computer simulation software that uti- 3 × 105 S/m and ωp (σ0 ) = 1.4 × 1015 rad/s. It is observed that
lizes the finite integration approach to simulate and analyze when V O2 undergoes a transition from the insulator phase to
the intended structure. The simulation program’s frequency the metal phase, its conductivity changes from 200 S/m to 2 ×
105 S/m [43], [44]. Due to the fact that the thickness of the Cu
metal ground plane exceeds the skin depth, the transmittance
T(ω) is zero. Consequently, absorbance A(ω) is calculated.
A(ω) = 1 − |R(ω)| = 1 − |S 11 |2 (3)
where R(ω) means reflectance and S 11 |(ω) show the reflection
coefficient
III. R ESULTS AND D ISCUSSION
In fig.3 the circular slit ring resonator (01) shows the
reflection and absorption spectrum, where the V O2 is used as
metal with high conductivity of 2 × 105 S/m. From the figure,
we can notice that the 90% absorption with the bandwidth
of 2.52 THz started from 2.86 to 5.4 THz and the central Fig. 5. The absorption and reflection spectrum of (a) the circular slit ring
frequency is 4.05 THz. resonator (03)
TABLE II
T HE FREQUENCY ANALYSIS OF THE ABOVE MODELS
Fig. 7. The variation of absorption with respect to thickness (h) of SiO2 Fig. 9. The effect of the outer ring radius (r1) on the absorption spectrum
Fig. 12. The top view’s electric field distribution at (a) 3.37 THz and (b)
5.87 THz in the horizontal direction, and (c) 3.37 THz and (d) 5.87 THz in
the vertical direction.
Fig. 11. The influence of the width of slit (d) on the absorption spectrum