IPB80N06S4-07

IPI80N06S4-07, IPP80N06S4-07

OptiMOS®-T2 Power-Transistor
Product Summary

V DS 60 V

R DS(on),max (SMD version) 7.1 mΩ

ID 80 A
Features
• N-channel - Enhancement mode
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type Package Marking

IPB80N06S4-07 PG-TO263-3-2 4N0607

IPI80N06S4-07 PG-TO262-3-1 4N0607

IPP80N06S4-07 PG-TO220-3-1 4N0607

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25°C, V GS=10V1) 80 A

T C=100°C, V GS=10V2) 58

Pulsed drain current2) I D,pulse T C=25°C 320

Avalanche energy, single pulse2) E AS I D=40A 71 mJ

Avalanche current, single pulse I AS - 80 A

Gate source voltage V GS - ±20 V

Power dissipation P tot T C=25°C 79 W

Operating and storage temperature T j, T stg - -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - 55/175/56

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Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics2)

Thermal resistance, junction - case R thJC - - - 1.9 K/W

Thermal resistance, junction -

R thJA - - - 62
ambient, leaded

SMD version, device on PCB R thJA minimal footprint - - 62

6 cm2 cooling area3) - - 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=40µA 2.0 3.0 4.0

Zero gate voltage drain current I DSS V DS=60V, V GS=0V - 0.01 1 µA

V DS=60V, V GS=0V,
- 5 100
T j=125°C2)

Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA

Drain-source on-state resistance R DS(on) V GS=10V, I D=80A - 6.2 7.4 mΩ

V GS=10V, I D=80A,
- 5.9 7.1
SMD version

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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics2)

Input capacitance C iss - 3460 4500 pF

V GS=0V, V DS=25V,
Output capacitance C oss - 850 1105
f =1MHz
Reverse transfer capacitance Crss - 35 70

Turn-on delay time t d(on) - 15 - ns

Rise time tr V DD=30V, V GS=10V, - 3 -

Turn-off delay time t d(off) I D=80A, R G=3.5Ω - 23 -

Fall time tf - 5 -

Gate Charge Characteristics2)

Gate to source charge Q gs - 21 27 nC

Gate to drain charge Q gd V DD=48V, I D=80A, - 5.5 11

Qg V GS=0 to 10V
Gate charge total - 43 56

Gate plateau voltage V plateau - 6.0 - V

Reverse Diode

Diode continous forward current2) IS - - 80 A

T C=25°C
Diode pulse current2) I S,pulse - - 320

V GS=0V, I F=80A,
Diode forward voltage V SD 0.6 0.95 1.3 V
T j=25°C

V R=30V, I F=50A,
Reverse recovery time2) t rr - 39 - ns
di F/dt =100A/µs

Reverse recovery charge2) Q rr - 38 - nC

1)
Current is limited by bondwire; with an R thJC = 1.9K/W the chip is able to carry 82A at 25°C.
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 1.0 page 3 2009-03-24

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1 Power dissipation 2 Drain current
P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD

90 100

80

80
70

60
60
50
P tot [W]

I D [A]
40
40
30

20
20

10

0 0
0 50 100 150 200 0 50 100 150 200
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p)
parameter: t p parameter: D =t p/T

1000 101

1 µs
0.5
100
10 µs
100
0.1
Z thJC [K/W]
I D [A]

0.05
100 µs 10-1

0.01

10

10-2 single pulse

1 ms

1 10-3
0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]

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5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS parameter: V GS

320 17
5V 6V
10 V 7V

280
8V 15

240

13
200

R DS(on) [mΩ]
7V
I D [A]

160 11

8V
120
9
6V

80

7
40 5V 10 V

0 5
0 1 2 3 4 5 6 0 80 160 240 320
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
parameter: T j

320 12
-55 °C

280

240 25 °C 10

200
R DS(on) [mΩ]
I D [A]

160 175 °C
8

120

80
6

40

0
4
2 3 4 5 6 7 8
-60 -20 20 60 100 140 180
V GS [V]
T j [°C]

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9 Typ. gate threshold voltage 10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D

4 104

Ciss
3.5

400 µA
103

C [pF]
3
Coss
V GS(th) [V]

40 µA
2.5

2 102

1.5 Crss

1 101
-60 -20 20 60 100 140 180 0 5 10 15 20 25 30
T j [°C] V DS [V]

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(VSD) I A S= f(t AV)
parameter: T j parameter: T j(start)

103 100

25 °C

100 °C

102 10
150 °C
I AV [A]
I F [A]

175 °C 25 °C
1
10 1

100 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 100 1000
V SD [V] t AV [µs]

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13 Avalanche energy 14 Drain-source breakdown voltage
E AS = f(T j); I D = 40 A V BR(DSS) = f(T j); I D = 1 mA

80 66

64
60

62

V BR(DSS) [V]
E AS [mJ]

40

60

20
58

0 56
25 75 125 175 -55 -15 25 65 105 145
T j [°C] T j [°C]

15 Typ. gate charge 16 Gate charge waveforms

V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD

10
12 V
48 V V GS
9
Qg
8

6
V GS [V]

4 V g s(th)

2
Q g (th) Q sw Q gate
1

Q gs Q gd
0
0 10 20 30 40 50
Q gate [nC]

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Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2009

All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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Revision History

Version Date Changes

Revision 1.0 24.03.2009 Final data sheet

Rev. 1.0 page 9 2009-03-24