Higher Order Differentiator Block for Synthesis of
Controllable Frequency Dependent Elements
Ondrej Domansky, Roman Sotner, Jiri Petrzela, Lukas
Langhammer
Dept. of Radio electronics, SIX Research Center
Brno University of Technology
Brno, Czech Republic
domansky@phd.feec.vutbr.cz
Abstract— This paper presents structure of generally nth-
order differentiator transfer block serving for purpose of integer
order or fractional order immittance (impedance) synthesis.
Presented structure of the differentiator is based on electronically
controllable current conveyors (ECCIIs), current conveyor of
second generation (CCII) and electronically controllable gain
amplifier (VGA). This structure was applied as example of 3rd
order differentiator and frequency dependent negative resistors
(FDNRs) of integer (as well as fractional) order. Proposed
applications offer electronic controllability of time constant,
magnitude value and reconfigurability of impedance character
(between positive and negative). PSpice simulations were
performed in order to verify presented concepts.
Keywords—differentiator; constant phase element; current
conveyors; electronic control; FDNR; fractional order FDNR;
reconfigurability
I. INTRODUCTION
Transfer blocks of integer order higher than 2 are well
known in circuit theory of common analog systems. They are
called frequency filters of passive or active construction. Their
transfer functions are polynomial rational expressions of
frequency dependent complex variable s. Denominator always
consists of all integer powers of s (s0…sn) till the highest power
given by order of the function. However, also transfer
structures having only the highest power of s in transfer
function are very important. They are known as integrators or
differentiators (KI(s) = k/s, KD = ks). So-called lossy types of
these integrators (KI(s) = k/(s+k), KD(s) = s/(s+k)) are also
known as simple first-order low-pass and high-pass filters [1],
[2]. These subparts are very important for many analog
systems. The functions having character of polynomial
description but expressed as impedance or admittance are
known as lossless or lossy inductances or capacitances.
Transformation from transfer function to immittance function
is quite simple task (additional voltage to current conversion of
the output response fed back to the input high-impedance node
[3]). First-(integer)order immittances are very useful and
known from the field of so-called synthetic elements [1],
replacing inductances by capacitors and proper active circuitry,
operating in real systems when required. Second-order
immittances in form ZC(s) = ks2 are known under designation
frequency dependent negative resistor (FDNR) [4] and their
978-1-5090-4591-4/17/$31.00 ©2017 IEEE
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Tomas Dostal
Dept. of Technical Studies
College of Polytechnics
Jihlava, Czech Republic
tomas.dostal@vspj.cz
application field focuses on design of RLC ladder filtering
structures. They serve as key subpart in so-called Brutton
transformation [4]-[7] in the most cases. The second-order
frequency dependent elements are generally called as super-
immittances [8].
A cascade of first-order integrators [1] only creates nth-
order integrator. However, construction of differentiator is not
so easy task. The same idea (cascade of lossless differentiators
utilizing grounded capacitors) is not suitable method because
of larger complexity of differentiator than integrator [3] (except
opamp based concept, however, using floating capacitor and no
possibility to immediate electronic control). Multiplication of
transfer segments in the feedback loop is a key feature in
synthesis of higher order blocks and elements. Discussion of
this method should start from circuits known under designation
impedance (or immittance) converters and inverters [3], [6] or
synthetic elements. The simplest solutions are based on
operational transconductance amplifiers (OTAs) [1]-[3].
However, only impedance conversion (from capacity to
inductance in most cases) is their main intention. Therefore,
further features extending overall immittance function are not
explored very often. Paper [9] indicates feasibility of extension
of circuitry in order to obtain more complex overall immittance
functions. Note that classical well-known Antoniou impedance
converter [10] is not so suitable for intended purposes due to
limited feasibility of multiplication, quite complex circuity and
lack of electronic controllability. Two opamps and five passive
elements (four of them are floating) are required for result in
form of multiplication of three impedances divided by two
impedances. This is not effective for intended purposes (see for
example [11]). Therefore better concepts should be studied.
Methods for multiplications and conversions/inversions of
immittances of higher order can be beneficially used also in
synthesis of fractional order elements also known as constant
phase elements (CPEs). Works [12]-[15] introduces solution of
CPE based on specific filtering responses created by multiple
feedback structure and subsequent voltage to current
conversion of output response to high-impedance input of the
system. On the other hand, the same result can be achieved by
simple voltage to current conversion of the transfer response of
bilinear blocks in simple cascade [16] into the input with less
complexity in some cases.
 INP X

RX CCII+ Z OUT
Y
AD844 VSETB1
VSETB2
VSETBn Y
Y Z ECCII-
Y Z ECCII- C1 B1 X
Z ECCII- C2 B2 X
R1
EL2082
Cn Bn X
R2
EL2082
EL2082 Rn

Fig. 1. Generalized structure for synthesis of nth-order differentiator.

Our paper brings interesting structure serving for generally

Fig. 2. Magnitude transfer response of 3rd-order differentiator from Fig. 1.
nth-order differentiator design as well as its simple modification
of frequency dependent higher order immittances of inductive certain modification. Values of active and passive parameters
character. This structure offers theoretically arbitrary selection were selected as follows: RX = 1 kΩ (950 + 50 Ω internal
of the order by simple modification in the feedback loop resistance of X terminal of AD844 [19]), R1 = R2 = R = 560 Ω
(adding or removal of segments). Commercially available (470 + 95 Ω internal resistance of X terminal of EL2082 [18]),
elements are selected in order to perform initial verifications of C1 = C2 = C3 (where applicable) = C = 10 nF, initial
our intentions by PSpice simulations. B1 = B2 = B = 1 (all VSETB = 1 V). All result were performed by
PSpice simulations with VDD = r 5 V.
II. GENERAL ELECTRONICALLY CONTROLLABLE HIGHER
ORDER DIFFERENTIATOR BLOCK A. 3rd-order Differentiator
Active devices used in following circuits should be Design of the circuit from Fig. 1 was provided for n = 3 in
described and explained briefly. Electronically controllable accordance to all above stated parameters. The particular
current conveyor of second generation (ECCII) [17] is very transfer function has form:
useful device for synthesis and design of controllable
3
applications. It’s ideal definition supposes terminal relations: § sCR ·
VY = VX, IY = 0, IZ = B∙IX and availability of simple control of K D
(s) ¨ ¸ . (3)
parameter B (current gain) by DC voltage. Note that B can be © B ¹
positive or negative in dependence of particular type of ECCII Results of simulation are given in Fig. 2 where trace slope
(ECCII+/-). Version of current conveyor of second generation +60 dB/dec was obtained as expected.
having fixed gain B = r 1 is abbreviated as CCII+/-. These
devices will be used in our designs. Specifications of current B. Integer Order Eletronically Tunable Negative/positive
mode multiplier EL2082 [18] and current feedback operational Frequency Dependent Resistor
amplifier (CFOA) AD844 [19] offer implementations of these
commercial devices for our purposes. Simple modification of the structure from Fig. 1 offers
construction of electronically tunable frequency dependent
Generalized structure of the nth-order voltage mode negative resistor of the second-order as shown in Fig. 3. This
differentiator block is shown in Fig. 1. The structure in Fig. 1 circuit may operate also as positive frequency dependent
has transfer function in form: element due to availability of reconfiguration of polarity by
n
amplitude gain A of the voltage mode variable gain amplifier
V OUT C i Ri (VGA). This modification supposes external RX polarity
– , (1)
n
K D
(s) s
V INP i 1 Bi change by VGA (where A = 102(│VSETA│1) for VCA610 type
[20]). Note that VSETA is physically connected with negative
that can be simplified (considering R1 = R2 = … = Rn = R, polarity. Overall impedance is defined as:
C1 = C2 = … = Cn = C and B1 = B2 = … = Bn = B) into:
2
V INP 2 § CR · RX
§ sCR ·
n
Z C (s)
2
s D s ¨ ¸ , (4)
K D
(s) ¨ ¸ . (2) I INP © B ¹ 1 A
© B ¹
where A = 0 (VSETA = 0 V) performs positive frequency
Note that full implementation of the block (Fig. 1) in voltage dependent resistor and A = 2 (VSETA = 1.15 V) reconfigure
mode requires additional voltage buffer at input terminal structure in Fig. 3 to FDNR. Ideal value for B1 = B2 = B = 1
(connected to RX) to increase input impedance given directly (VSETB = 1 V) is given as D = °ZC(f)°/(2Sf)2 = 31.4∙10-9 Ω3F2.
by RX in Fig. 1. However, additional utilization of unity gain Results confirming intended behavior are shown in Fig. 4
buffers depends on specific implementation where discussed (figures include important parameters and notes). Simulations
blocks will be applied. Examples of Application yield D = 32.2 ∙10-9 Ω3F2 for A = 0 and 29.6∙10-9 Ω3F2 for
Proposed structure can be useful in transfer blocks as well A = 2.
as in immittance (impedance or admittance) emulators after

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 ZC(s)
Y
Real input resistance in input node (Rp) causes high-
Z CCII+ RX frequency limitation in simulated responses (parasitic pair of
X complex conjugated poles) at frequency:
VSETA
AD844

VGA 1 A RpB
2
A 1
VSETB1 VCA610 fp , (5)
VSETB2 2 S RC RX
Y
ECCII- Z Y
as it can be clearly visible in Fig. 4 and Fig. 6. This pole
X B1 ECCII- Z
X B2 frequency is dependent on tuning process (adjusting of B),
R1 EL2082
therefore, it cannot be avoided in real case. Significantly high
C1 (CPE1) R2 EL2082
C2 (CPE2) real part of input resistance can only suppress this effect and
move this pole to higher frequencies.
Fig. 3. Electronically tunable frequency dependent positive/negative resistor
created from structure in Fig. 1.
C. Fractional Order FDNR
Synthesis of passive versions of constant phase element
(CPE) with inductive character is not easy task because such
design requires presence of real inductances (coils) in the
structure (RL segments) [21], [22]. Therefore, design of
fractional order active FDNR with CPEs (ZCPE(s) = 1/(sαCα)) of
capacitive character (fractional order capacitances) and
subsequent impedance conversion seems to be better approach.
Structure presented in Fig. 3 offers interesting performance
also for fractional order circuits. Such modification requires
only simple replacement of integer order capacitors by
fractional order capacitors (CPEs with capacitive character) in
Fig. 3. Then the overall impedance has form:

V INP D E
§ C D R1 ·§ C E R 2 · RX
Z C (s) s ¨ ¸¨ ¸ , (6)
¨ ¸¨ ¸
a)
I INP © B1 ¹© B 2 ¹1 A

that could be simplified when R1 = R2 = R and CD = CE,

B1 = B2 = B into:
2
2D 2D § CD R · RX
Z C (s) s DD s ¨ ¸ , (7)
© B ¹ 1 A

where CD = 1/ XCPED and identical order (α = β) of both CPEs is

supposed. Design method and calculations explained in [21],
[22] were used for design of fractional order CPEs with
capacitive character (containing RC segments only).
Parameters of CPE structure are shown in Fig. 5 for D = 1/3,
XCPED = 10 kΩ (phase shift of ZC(s) of FDNR M = 90·2D = 60
degree). Results of simulation as well as tuning process
(available also in all previous cases) are shown in Fig. 6. We
b) are supposing A = 2 (VSETA = 1.15 V) and B1 = B2 = B
Fig. 4. Impedance characteristic of circuit in Fig. 3 for both configurations (VSETB1 = VSET2B = VSETB) set to 0.1, 0.5, 1.0, 2.0 V for adjusting
(positive and negative): a) magnitude responses, b) phase responses. of Dα.

ZCPE(s)

R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14

4230 Ω 2300 Ω 1251 Ω 680 Ω 370 Ω 200 Ω 110 Ω 58 Ω 33 Ω 18 Ω 10 Ω 5.1 Ω 2.7 Ω 1.5 Ω
Cp Rp
0.82 pF 3578 Ω C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14
2.35 μF 0.69 μF 202 nF 59.9 nF 16.8 nF 5.1 nF 1.5 nF 446 pF 130 pF 39 pF 11 pF 3.3 pF 0.82 pF 0.42 pF

Fig. 5. Constant phase element (and its values) for implementation in Fig. 3 instead of integer order capacitors.

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