KITHUATDIENTU

TRƯỜNG ĐẠI HỌC BÁCH KHOA
KHOA CƠ KHÍ
BỘ MÔN CƠ ĐIỆN TỬ
KỸ THUẬT ĐIỆN TỬ
(Cho sinh viên ngành Cơ điện tử)
Firma convenzione
Năm học: 2023 - 2024
Politecnico di Milano e Veneranda Fabbrica
del Duomo di Milano
Aula Magna – Rettorato
MercoledìTS. Đặng Phước
27 maggio 2015 Vinh
Email: dpvinh@dut.udn.vn
2
Content – 30 hours
Chapter 1: Introduction
Chapter 2: Diode & Application
Chapter 3: BJT & Application
Chapter 4: OPAMP & Application
Chapter 5: Fundamental of Digital Electronics
Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

3
References
1. Slides Kỹ thuật Điện Tử
2. Slide “Kỹ thuật điện tử”, Huỳnh Việt Thắng, DUT
3. Đỗ Xuân Thụ, “Kỹ thuật Điện Tử”, NXB Giáo dục

Việt Nam, 2011
4. Trần Quang Vinh, “Nguyên lý kỹ thuật điện tử”,

NXB Giáo dục, 2009.
5. Internet
4
Evaluation
 3 elements: Process + Mid-term + Final exam
 Weight:
 Process: Diligence 15% + Exercises 15%
• 01 absence -2 of diligence
• 05 absences  No final exam
 Mid-term exam: 20%
 Final exam: 50%
 Exam: written exam, materials are not allowed (60 min)
 “Liêm chính học thuật”

5
Liêm chính học thuật
 Đình chỉ học tập 6 tháng: mang phương tiện kỹ thuật mang tin,
truyền - nhận tin (như điện thoại, máy ảnh, đồng hồ thông minh,...)
vào phòng thi
 Đình chỉ học tập 12 tháng: đi thi hộ hoặc nhờ người khác thi hộ,
làm bài hộ đối với trường hợp vi phạm lần thứ nhất; người học sử
dụng phương tiện kỹ thuật mang tin, truyền - nhận tin trong thời
gian thi.
 Buộc thôi học: đã bị kỷ luật với hình thức “Đình chỉ học tập 6
tháng” hoặc “Đình chỉ học tập 12 tháng” và sau đó phạm lỗi có mức
độ “Đình chỉ học tập 6 tháng” hoặc “Đình chỉ học tập 12 tháng”; sử
dụng giấy tờ giả mạo và nhờ thi hộ; tổ chức thi hộ; tổ chức làm giả
các giấy tờ liên quan đến kỳ thi.

6
Role of subject
 Provide basic knowledge for:
 Digital Technique
 Microcontroller + Practice
PBL3
 Industrial Sensor
 Workshop Practice 2
 Applied Electronics
 Mechatronics System + PBL4
 Final Project

7
PBL3

8
PBL3

9
PBL4 & Final Project

10
PBL4 & Final Project

11
Software

12
Proteus

13
Altium Designer

14
Altium Designer – 3D

Chapter 1
Introduction
Firma convenzione
del Duomo di Milano
Mercoledì 27 maggio 2015
16
Content
1. History
2. Popular electronic devices
 Passive devices
 Active devices
 Opto-Electronic devices
3. Voltage, current and fundamental laws
 Voltage and Current
 Voltage source and Current source
 Ohm law
 Kirchoff voltage law (KVL)
 Kirchoff current law (KCL)

17
Symbols

18
Symbols
Power supply Ground/Masse

19
Analog vs. Digital
 Analog (Điện tử tương tự )
 Digital (Điện tử số)
 0V - 0.8V  “0” / Low
 2.7V - 5V  “1” / High

20
Analog vs. Digital

21
Analog vs. Digital

22
Analog vs. Digital

23
Datasheet

24
Datasheet

History
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History
 Thomas Alva Edison
(11/1847 - 10/1931) was an
American inventor and
businessman, who has been
described as America's
greatest inventor
 Edison patented 1,093 of his

inventions

27
History
 In 1876, he established his first
laboratory facility in Menlo
Park, New Jersey.
 In 1878, Edison began working
on a system of electrical
illumination.
 In 12/1879, Thomas Edison's
first successful light bulb model,
used in public demonstration at
Menlo Park

28
History - Transistor
In 1948, the point contact
transistor was independently
invented by German physicists
Herbert Mataré and Heinrich
Welker while working at the
Compagnie des Freins et
Signaux, in Paris.

29
History – BJT

30
History – FET
The most widely used transistor is the MOSFET (metal–
oxide–silicon field-effect transistor), also known as the MOS
transistor, which was invented by Mohamed
Atalla and Dawon Kahng at Bell Labs in 1959.

31

32
History – IC
 1960: First Planar Integrated Circuit was fabricated
 An integrated circuit or monolithic integrated circuit (also
referred to as an IC, a chip, or a microchip) is a set
of electronic circuits on one small flat piece (or "chip“) of
semiconductor material that is normally silicon

Popular Electronic
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Devices
del Duomo di Milano
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Classification
1. Passive device
2. Active device
3. Opto-Electronic devices

35

36
Passive Device
A passive element is an electrical component that does
not generate power, but instead dissipates, stores,
and/or releases it, includes:
 Resistor
 Capacitor
 Inductor
 Relay
 …
37
Resistor
 Resistor: is a passive two-terminal electrical
component that implements electrical resistance as a
circuit element
 Resistivity is a fundamental property of a material that
measures how strongly it resists electric current.
 A low resistivity indicates a material that readily allows

electric current and vice versa.
 The SI unit of electrical resistivity is the ohm-meter (Ω.m).

38
Electrical Resistivity

39
Electrical Resistivity

40
Resistor
SI unit: Ohm ().
– 1k = 103 .
– 1M = 106 .
Resistor Variable Resistor

41
Resistor

42
Power Resistor

43
Variable Resistor

44
Potentiometers
Potentiometers are used to vary the resistance in a
circuit by turning a rotary knob

45
Measure R?

46
Resistor Color Codes

47
Resistor Color Codes

48
Surface-mount device (SMD)

49
Linh kiện dán (SMD)

50

51

52
Surface-mount device

53
Bar Resistor

54
Bar Resistor

55
Capacitor
 A capacitor is a device
that stores electrical
energy in an electric
field.
 It is passive electronic
component with
two terminals.
 Capacitance: Fara (F)
– 1F = 10-6 F.
– 1nF = 10-9 F.
– 1pF = 10-12 F.

56
Capacitor
• A capacitor consists of two conductors separated by a
non-conductive region.
• The non-conductive region can either be a vacuum or an
electrical insulator material known as a dielectric.
• In the long-time limit, after the charging/discharging
current has saturated the capacitor, no current would
come into (or get out of) either side of the capacitor 
the long-time equivalence of capacitor is an open circuit.
• In the short-time limit, if the capacitor starts with a
certain voltage V, since the voltage drop on the capacitor
is known at this instant, we can replace it with an ideal
voltage source of voltage V. Specifically, if V=0 (capacitor
is uncharged), the short-time equivalence of a capacitor is
a short circuit.

57
Application
– Filter: smooth the output of power supplies
– High frequency noise filter: capacitor can be consider as

short circuit at high frequency  use for high frequency filter.
– Amplifier stage: allowing AC and blocking DC  block DC

signal in the amplifier stages.
– Frequency filter: combine with other passive devices such

as resistor or inductor to become the certain frequency filter
circuits.

58
DC Power Supply

59
DC Power Supply

60
DC Power Supply

61
Classification

62
Ceramic Capacitor

63
Electrolytic Capacitor

64

65

66
Capacitor Symbols

67
Variable Capacitor

68
Exercises
1. How to test a capacitor?
2. What are functions of capacitor?
3. The differences between ceramic and

Electrolytic capacitor?

69
Inductor
 An inductor, also called a coil, choke, or reactor, is a passive two-
terminal electrical component that stores energy in a magnetic
field when electric current flows through it.
 An inductor typically consists of an insulated wire wound into a coil.
 Many inductors have a magnetic core made of iron or ferrite inside the coil.
 When the current flowing through the coil changes, the time-varying
magnetic field induces an electromotive force (e.m.f.) (voltage) in the
conductor, described by Faraday's law of induction.
 According to Lenz's law: inductors oppose any changes in current through
them.
 They are used to block high frequency AC while allowing DC to pass. They
are also used in electronic filters to separate signals of different frequencies
 SI Unit: Henry (H) 1mH = 10-3H.

70
Inductor
An inductor is characterized by its inductance, which is the ratio
of the voltage to the rate of change of current.
= 2. .f.L

71
Cuộn cảm

72

73
Classification

74
Classification
Variable core
Air core
Iron core
Ferrite core
75
Exercises
1. Characteristics, functions and applications of
4 kinds of inductors?

76
Transformer
A transformer is a device that transfers electric energy from one
alternating-current circuit to one or more other circuits, either
increasing (stepping up) or reducing (stepping down) the voltage.

77
Transformer
Where N is the
number of turns
in winding

78
Step down transformer
Primary Secondary
1000 V 50 turns 10 turns 200 V

2A 10 A
2000 W 2000 W

79
Transformer

80
Biến áp

81
DC Power Supply

82
Transformer

83
Relay
 A relay is an electrically operated switch
 Consists of a coil of wire wrapped around a soft iron core (a solenoid),
an iron yoke which provides a low reluctance path for magnetic flux, a
movable iron armature, and one or more sets of contacts2 status: ON
and OFF
 Widely application in domestic and industrial devices

84
Construction

85
Cấu tạo

86
Cấu tạo

87
Cấu tạo

88
Thermal Relay
 The basic working principle of thermal
relay is that, when a bimetallic strip is
heated up by a heating coil carrying over
current of the system, it bends and makes
normally open contacts.
 The bimetallic strips are made of the alloy
of nickel and steel.
 When the fault occurs on the system, the
bimetallic spring is heated and getting
bent.
 The contact of the relay energizes the trip
circuit because of which the contacts of the
circuit breaker close. Thus, the system
remains safe.
 This relay has low overloading
capability. It is designed to operate under
6 ~ 7 times more than the fullFaculty
Dr. Dang Phuoc Vinh
load of Mechanical Engineering
current.
89
Thermal Relay

90
Thermal Relay

91
Applications

92
Active Devices
 An active device is any type of circuit component with the ability
to electrically control electric charge flow (electricity controlling
electricity) such as diodes, transistors, SCRs, TRIACs,…
 In order for a circuit to be properly called electronic, it must
contain at least one active device.

93
Diode
A diode is a type of two-terminal electronic component with nonlinear
resistance and conductance (i.e., a nonlinear current–voltage
characteristic), distinguishing it from components such as two-
terminal linear resistors which obey Ohm's law

94
Diode – Function
 Allowing an electric current to pass in one direction (called the
diode's forward direction)
 Blocking current in the opposite direction (the reverse
direction).

95
Diode Bridge
A diode bridge is an arrangement of four (or more) diodes in a bridge
circuit configuration that provides the same polarity of output for
either polarity of input. When used in its most common application,
for conversion of an Alternating Current (AC) input into Direct
Current a (DC) output, it is known as a bridge rectifier

96
Diode Bridge

97
Classification
 Rectifier Diode (Diode chỉnh lưu)
 Zener Diode
 Diode varicap or varactor (Diode biến dung)
 Diode Tunnel (Diode hầm)

98
Transistor
 BJT (Bipolar Junction Transistor)
 Three-terminal electronic device constructed of
doped semiconductor material.
 2 types:
 NPN
 PNP NPN PNP
 BJT is an important device in the electronic circuits.
 Switching
 Amplifying

99

100
BJT

101
Opto-Electronic Devices
 Light Dependent Resistor
 Photo Diode
 Photo Transistor

102
Light Dependent Resistor
Light Dependent Resistor (LDR): is a passive component that
decreases resistance with respect to receiving luminosity (light) on
the component's sensitive surface. The resistance of a photo-
resistor decreases with increase in incident intensity

103
Photo Diode
 A semiconductor diode
 Converts light into an electrical current
 Operate at reverse biased.
 Traditional solar cell used to generate
electric solar power is a large area
photodiode

104
Photo Tranzito
 The Phototransistors are manufactured in the
similar way by which normal transistor is
manufactured
 Only difference is the area of the base and
collector region in case of phototransistors is quite
large as compared to the normal transistor. This is
because the more the light falls on the
phototransistor the more current it will generate

105
Light Emitting Devices
 LED: Light Emitting Diode
 7-segment Display (LED 7 đoạn)

106
LED
 In 1962: Low-Density red LED
 As diode is forward biased  electron combines hole 
releases energy in the form of a photon
 Note: The maximum current for the standard LED is
about 10-20 mA

107
LED

108
Application
 In the domestic and industrial field
 High-Density LED (LED siêu sáng)
 Red & Yellow: 1.9V – 2.1V
 Blue: 3.0V – 3.4V
 White: 3.4V – 4.0V

109
Flexible LED Strip Lights

110
7-segment Display
2 types: Common Anode & Cathode
CA: Common Anode
Anode chung
A B C D E F G Dp
A B C D E F G Dp
CC: Common Cathode

Cathode chung
111
4-Digit Display

112

113
Digital Clock

114
4 x 14 Affichages LED

115
LCD
Liquid-crystal display (LCD) is a flat-panel display or other
electronically modulated optical device that uses the light-modulating
properties of liquid crystals

116
LCD

Voltage, Current &
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Basic Laws
del Duomo di Milano
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Voltage
 Voltage, electric potential difference is the difference
in electric potential between two points.
 A voltmeter can be used to measure the voltage (or
potential difference) between two points in a system.
 Often a common reference potential such as
the ground of the system is used as one of the points.
 SI unit: Volt (V).

119
Current
 Electric current is flow of electrons in a conductor.
 2 different kinds of charge:
– Hole: Positive charge
– Electron: Negative charge
 Current flow is reverse with electron flow
 SI Unit: Ampere (A).

120
Current & Voltage Source
Current source: delivers or absorbs an electric current which is
independent of the voltage across it
Voltage source: is a two-terminal device which can maintain a
fixed voltage and is independent of the load resistance or the
output current

121
Ohm’s Law
 A well known law: V = IR
 Linearity between voltage and
current.
 He was considered crazy,
because he assumed that the
current was the same in different
elements connected in series.
 He lost his professor position.
Georg Simon Ohm
(1789 – 1854)
122
Ohm’s Law

123
Ohm’s Law
What is now known as Ohm's law

appears in the famous book Die
galvanische Kette, mathematisch
bearbeitet (1827) in which he gave his
complete theory of electricity

124
Ohm’s Law in book

125
Kirchhoff Law
Kirchhoff’s Voltage Law (KVL)
– Sum of the voltage differences around any
closed loop in a circuit must be zero.
– V=0.
Gustav Kirchhoff
(1824 – 1887)

126
Kirchhoff Law
Kirchhoff’s Current Law (KCL): current flowing into a node (or a
junction) must be equal to the current flowing out of it.

127
Kirchhoff Law
What is the magnitude of the electric potential difference across
resistor R2?
A: 8V B: 12V C: 3V D: 6V

128
Kirchhoff Law

Chapter 2
Diode
Applications
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Content
 Semiconductor
 Diode
 Construction
 Characteristics & Parameters
 DC Power Supply

Semiconductor
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Semiconductor
Based on the resistivity , we have 3 kinds of material:
– Conductor
– Semiconductor
– Insulator
Conductor characteristic of some materials are dependent on
environment such as temperature, humidity, pressure…
Conductor Semiconductor Insulator

Điện trở suất
10-610-4 10-4104 1051022
 (cm)
T0    
133
R vs. T

134
R vs. T

135
Electrical Charge
 Electric current is flow of electrons in a conductor.
 2 different kinds of charge:

– Hole: Positive charge
– Electron: Negative charge

136
Energy Band
 Valence Band: the band of electron orbitals that electrons can
jump out of, moving into the conduction band when excited.
 Conduction Band: the band of electron orbitals that electrons
can jump up into from the valence band when excited.
 Band gap: the minimum energy required to excite an electron
that is stuck in its bound state into a free state where it can
participate in conduction.

137
Energy Band
Insulator Semiconductor Conductor

138
Electric current flow
 In order to generate an electric current  need 2 conditions
 Generate free charges thanks to energy supply
 These charges move in a certain flow
 Current flow is reverse with electron flow

139
Intrinsic Semiconductor
 2 typical intrinsic (pure) semiconductor
– Ge: Germanium small energy is needed in order
– Si: Silicium to break the covalent bond
 Belong to the IV group of the Periodic Table.
 Consists of 4 electrons in the valence shell
 4 covalent bonds are formed between the electrons of

the silicon atom.

140
Intrinsic Semiconductor
n: number of electron n = p
p: number of hole
• When the temperature of the
crystal is increased  the
electrons in the covalent bond
gain kinetic energy  breaking
the covalent bond  free.
• Thus, the movement of free
electrons generates current.
• The rise in temperature
somewhat increases the
number for free electrons for
conduction.
141
Doped Semiconductor
N type: major carrier is electron 10 − 10
P type: major carrier is hole atom/

142
N-type Semiconductor
 Adding the group V elements or pentavalent impurity
to a pure semiconductor, such as Phosphor.
 These are termed as donor impurity
 A pentavalent impurity holds 5 electrons in its valence

shell
 n>p

143
N-type Semiconductor

144
P-type Semiconductor
 Introducing group III elements or trivalent impurity
into the pure semiconductor, such as Boron (Bo).
 These are termed as acceptor impurity
 A trivalent impurity has only 3 electrons in the valence

shell
 p>n

145
P-type Semiconductor

146
Doped Semiconductor

147
Chất bán dẫn tạp

148
Semiconductor

DIODE
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150
Diode
Diode is a crystalline piece of semiconductor material with
a P–N junction connected to two electrical terminals.
Two Electrode
Di ode
P N
Greek
D1
ANODE CATHODE
DIODE

151
Price

152
Application

153
Biasing Mode
 Unbiased
 Reverse Biased
 Forward Biased

154
Unbiased
 At the across of P-N junction,
electrons of N-type combine
with the hole of P-type 
Depletion Zone (100 µm)
 A voltage barrier is generated.

– Ge: U = V ~ 0.3V
– Si: U = V ~ 0.6V

155
Reverse Biased
 Free holes of that region are attracted
towards the negative terminal of the E
source
 Free electrons of that region are
attracted towards the positive terminal
of the source
 Depletion layer is larger.
 Ideally: no current flows in diode when
reverse biased.
 Tiny current flow from N-type region
to P-type region due to minority
carriers that are thermally generated
electrons in P-type semiconductor and
holes in an N-type semiconductor.

156
Forward Biased
 Free holes of that region are E
attracted towards the positive
terminal of the source
 Free electrons of that region are
attracted towards the negative
terminal of the source
 Depletion layer is disappear
 Free electrons from the N-type
region can easily drift to the P-type
region
 Holes from the P-type region to the
N-type region in the crystal.
 Ideally, there will be no obstruction
of flowing current, and the PN
Dr.junction behaves
Dang Phuoc Vinh as the short circuit
Faculty of Mechanical Engineering
157
Operating Principle

158
Classification

159
Current in Diode
The diode equation gives an expression for the current through a
diode as a function of voltage. The Ideal Diode Law, expressed as:
I =I −1
where
• q: absolute value of electron charge (q = 1,6.10 C)
• k: Boltzmann's constant (k = 1,38.10-23 J/K)
• T: Kelvin temperature (K).
• U: applied voltage across the terminals of the diode
• I : "dark saturation current", the diode leakage current
density in the absence of light.

160
Current in Diode
When diode is biased (I , U0):
= / −1
Equation of
Set UT = kT/q is the thermal voltage Diode characteristic
At 300 K: UT ~ 25.5 mV.
/
= −1
Dark saturation current :
= . /°
= ( ) ( ) ° = − ;

Static Characteristic
&
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del Duomo di Milano
Parameters
 Forward biased 162
Static characteristics  U remains constant
when I change
 Working range of
Diode equation I =I −1 rectifier
 Reverse biased
 U remains
constant when
I change
 Working range
Dr. Dang Phuoc Vinh of ZenerFaculty
diodeof Mechanical Engineering
Avalanche breakdown? 163
Both breakdown types are used

in Zener diodes with the Zener
effect predominating at lower
voltages and avalanche
breakdown at higher voltages.

164
Datasheet

165
Datasheet

166

167
Working conditions
 Diode is forward biased (+ connect to P, - connect to N)
 Applied voltage to the diode must be larger than the
threshold voltage: V
 Ge: V ~ 0.3 (V)
 Si: V ~ 0.6 (V)

168
Freewheel/Flyback diode?
Function?

169
Function?

170
If no diode?

171
If wrong position

172

173
Good Better Best

DC Power
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Supply
del Duomo di Milano
175
Schematic

Rectifier
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del Duomo di Milano
177
Rectifier
 Half Wave Rectifier (Bộ chỉnh lưu bán kỳ)
 Full Wave Rectifier (Bộ chỉnh lưu toàn kỳ)
 Full Wave Bridge Rectifier (Bộ chỉnh lưu cầu)

178
Half Wave Rectifier

179
Half Wave Rectifier

180
Half Wave Rectifier
V0 ?
V0 = 0, vs < VD0
V0 = (vs-VD0)R/(R+rD)
181
Half Wave Rectifier

182
Chỉnh lưu bán kỳ

183
Mạch lọc tụ C

184
Full Wave Rectifier

185
Full Wave Rectifier
V0 ?

186
Chỉnh lưu toàn kỳ

187
Full Wave Bridge Rectifier
D1
D2
D4
D3

188

189
V0 ?

190
D1
D2
D4
D3

191
Chỉnh lưu toàn kỳ

192
Diode bridge

193
Price

194
Digital Oscilloscope

195
Rectifier Circuit

196
Sơ đồ khối

197
DC Power Supply

198
DC Power Supply

Zener Diode
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del Duomo di Milano
200
Diode Zener
Clarence Melvin Zener

(12/1905 – 7/1993)

201
Zener Diode
 The basic function of Zener diode is to maintain a specific voltage
across its terminals within given limits of line or load change.
 Typically it is used for providing a stable reference voltage for use
in power supplies and other equipment .

202
Zener Diode

203
Application
Producing Nonstandard
Driving a Relay Output Voltages

204
Waveshaping
• Positive half-cycle: conducts and breaks down. Therefore, the
output is clipped.
• Negative half-cycle: the action is reversed. conducts and
breaks down. In this way the output is approximately a square wave.
= + .

Voltage Regulator IC
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Voltage Regular IC
1. IC provides fixed voltage
 Positive voltage regular – 78XX
 Negative voltage regular – 79XX
2. IC provides variable voltage
Voltage regulator IC

207
Positive voltage – 78XX
• 78XX Family
• XX is replaced with two
digits, indicating the
output voltage
7805; 7806; 7808; 7809

7812; 7815; 7818; 7824
Input voltage: U ≤ 35 V
U >U +3

208
Input voltage : U ≤ 35 V
U >U +2÷3 Out
In
Ground
209
Input voltage:
U ≤ 35 V
U >U +2÷3

210
Type Imax
78XX 1A
78MXX 500 mA
78LXX 100 mA

211
Negative voltage – 79XX
• 79XX Family
• XX is replaced with two
digits, indicating the
output voltage
7905; 7906; 7908

7912; 7915; 7918; 7924
Input voltage : U ≤ 35 V
U > U +3

212
Negative voltage – 79XX
Type
79XX 1A
79MXX 500 mA
79LXX 100 mA

213
78XX vs. 79XX

214
Voltage Regulator Circuit

215
DC Power Supply

216
Variable voltage - LM317
• LM317 is a 3-terminal device
• U >U +2÷3 R
U = 1.25 1 +
•I = 1.5 A R

217
DC Supply - LM317

218
Variable voltage – LM2596
• LM2596 has 5 pins
• U : 3 ÷ 40 V
• U : 1.5 ÷ 35 V
• I =3A

219
Variable voltage – LM2596
• LM2596 has 5 pins
• U : 3 ÷ 40 V
• U : 1.5 ÷ 35 V
• I =3A

220
DC Supply – LM2596

221
LM2596 Price

222
DC Supply – LM2596s

223
DC Supply – LM2596s

224
DC Supply Power

225
Adapter

226
DC Power for PLC

Chapter 3
BJT & Application

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228
Content
1. Introduction and Construction of BJT
2. Classification
3. Pinout
4. Operating Principle
5. Specifications
6. BJT Polarization
7. Amplifier Circuit using BJT
8. Multistage Amplifier
9. BJT Power Amplifier

229
BJT Introduction
 Bipolar Junction Transistor (BJT): three-terminal electronic device
constructed of doped semiconductor material
 Bipolar: operation involves both electrons and holes.
 Application: amplifying or switching applications.
 Charge flow in a BJT is due to bidirectional diffusion of charge
carriers across a junction between two regions of different charge
concentrations.
 Most of the BJT collector current is due to the flow of charges
injected from a high-concentration emitter into the base where they
are minority carriers that diffuse toward the collector, and so BJTs
are classified as minority-carrier devices.

230
BJT Construction
 BJT: Bipolar Junction Transistor
 2 junctions between two semiconductor: N-type & P-type
 3 terminals: E-Emitter, B-Base, C:-Collector

231
BJT Construction
 BJT: Bipolar Junction Transistor
 2 junctions between two semiconductor: N-type & P-type
 3 terminals: E-Emitter, B-Base, C:-Collector

232
BJT Aplication

233
BJT Aplication

234
BJT Aplication

Classification
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2 types: NPN & PNP
NPN PNP

237
2 types: NPN & PNP

238
2 types: NPN & PNP

239
NPN Transitor

240
PNP Transitor

241
PNP Transitor Connection

242
C945 Transitor Pinout

243
BJT Pinout

Operating
Principle
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245
Operating Principle

246
Operating Principle

247
Nguyên lý hoạt động

248
Current & Voltage
NPN PNP
IE IC IE IC
- UCE + + UEC -
E C E C
- - + +
VBE IB VBC VEB IB VCB
+ + - -
B B
IE = IB + IC IE = IB + IC
UCE = -VBC + VBE UEC = VEB - VCB
249
Specifications
• IE = IB + IC
• Ratio of the collector current to the =  IC = IE
emitter current 
• Current gain: 
IC = IB
= (  100 with low-power BJT)
IE IC
 = IC / (IE – IC) =  / (1- ) E
- UCE +
C
 =  / ( + 1) - -
IB = (1 - )IE VBE IB VBC
+ +
IE = (1 + )IB B
250
Specifications

251
Example
IE ? IE = IB + IC = 0.05 mA + 1 mA = 1.05 mA
1 mA
50 A
β? β = IC / IB = 1 mA / 0.05 mA = 20
 = IC / IE = 1 mA / 1.05 mA = 0.95238
?
 = β / (β + 1) = 20/21 = 0.95238

Operating
Regions
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253
Operating Regions
• Supply DC current to three terminals of BJT
• Determine the static operating regions of BJT
 Active region (Amplifier region – Linear region)
 Saturation region
 Cut-off region
Active Region Saturation Region

 B-E is forward biased.  B-E is forward biased.
 B-C is reverse biased.  B-C is forward biased.
• Because the B-E junction can be considered as a diode 

in order to active a BJT BJT Ge : V ~ 0.3V
VBE  V BJT Si : V ~ 0.6V

254
Operating Regions

255
DC Load Line
 The DC Load Line of BJT Biasing Circuit is a straight line
drawn on the transistor output characteristics.
 For a common-emitter circuit, the load line is a graph of

collector current (IC) vs. collector-emitter voltage (VCE), for a
given value of collector resistance (RC) and a given supply
voltage (VCC).
 The load line shows all corresponding levels of IC and VCE that
can exist in a particular circuit.

256
DC Load Line
DC Load line
IC
mA
IB
µA Q V UCE RC
RB
VB VCC
Remain IB , change VCC , we have: =

257
Output Characteristics
• DC Load Line is determined by
IB=max
using the Ohm law.
• Q point or the operating point of
a device is the steady-state DC
voltage or current at a specified K
terminal of an active device such
as a diode or transistor with no
input signal applied.
• Q point is the intersection of IB=0
DC load line and the IB curve L
when no input signal.
• Q is located in the center of the K-
L range  BJT is more stable.

258
Saturation region B-E & B-C is forward biased
( )
= BJT “fully ON” VBE(sat) ≥ 0,8V & VCE(sat) = 0,2V
=
=
=
B-E is forward biased
B-C is reverse biased (Vc > Vb > Ve)
DC Load line =
Active (Linear) region
=
Q-Point
= Cut-off region
BJT “fully OFF”
=
=
( )
Dr. Dang Phuoc Vinh ( ) =

Faculty of Mechanical Engineering
=
259
Operating Regions

260
BJT C1815
( )

261
Example 1
BJT in the circuit as shown in figure is Vc
2SC1815 type with following specifications:
VB = 3 V ; RB = 10 kΩ
VC = 5 V ; RC = 1 kΩ
VBE = 1 V ; VCE Sat = 0.1 V
β(hFE) = 100
• Determine IB ; IC ; VCE
• Power consumption? E

262
Example 1
= 5V = +
= +
RC = 1 kΩ
− 3−1
= = = 0.2 mA
10 kΩ
= 3V
Suppose that BJT works in Active Region

RB = 10 kΩ =
= = 100 × 0.2 = 20 mA
= − = 5 − 20 mA × 1kΩ = −15 V
E Re-check: < ( ) = 0.1
Wrong Assumption

263
Example 1
= 5V = +
= +
RC = 1 kΩ Suppose that BJT works in the
Saturation Region
= ( ) = 0.1
= 3V
− 3−1
= = = 0.2 mA
10 kΩ
RB = 10 kΩ − ( ) 5 − 0.1
( ) = = = 4.9 mA
1 kΩ
( ) 4.9
Re-check: = = = 0.049 mA
E ( )
100
> ( ) Suitable Assumption

264
Example 1
Vc = 0.2 ; = 4.9
= +
= 0.2 × 1 + 4.9 × 0.1 = 0.69 mW
4.9 mA
Power consumption on load:
=
= 1kΩ × 4.9mA = 24.01 mW
Power consumption on system:
= + +
= + + +
0.2 mA
= 25.1 mW
E
24.01
Efficiency: = = = 95.00%
25.1
265
Example 2
BJT in the circuit as shown in figure is Vc
2SC1815 type with following specifications:
VB = 3 V ; RB = 100 kΩ
VC = 5 V ; RC = 1 kΩ
VBE = 1 V ; VCE Sat = 0.1 V
β(hFE) = 100
• Determine IB ; IC ; VCE
• Power consumption? E

266
Example 2
Vc Voltage equation in the part
= +
− 3−1
= = = 0.02 mA
100 kΩ
Suppose that BJT works in Active Region
= = 100 × 0.02 = 2 mA
Voltage equation in the part
= +
= − = 5 − 2 mA × 1kΩ = 3 V
E Re-check: > ( ) = 0.1

Suitable Assumption

267
Example 2
Vc = 0.02 ; =2
= +
= 0.02 × 1 + 2 × 3 = 6.02 mW
2 mA
Power consumption on load:
= = 1kΩ × 2mA = 4 mW
Power consumption on circuit:

= + +
= + + +
0.02 mA = 10.024 mW
E
4
Efficiency: = = = 39.9%
10.024
268
Active and Saturation Region
Active region: IC =  IB
Saturation region: IC =  IB is not valid

IB =
− ( )
( ) =
( )
( ) =
IB < ( ): Active
IB ≥ ( ): Saturation In practice: IB = kI ( ) ; k = 2-5

269
Cut-off Characteristics

270
Saturation Characteristics

271
Basic NPN Switching Circuit
• Common Emitter circuit
• Transistor can be turned either
fully “OFF” (cut-off) or fully “ON”
(saturated).
• An ideal transistor switch infinite
circuit resistance between the
Collector and Emitter when turned
“fully-OFF”  zero current flowing
through it.
• Zero resistance between the
Collector and Emitter when turned
“fully-ON”, resulting in maximum
current flow.

BJT Biasing
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BJT Biasing
1. Constant current bias
2. Feedback voltage bias
3. Automatic bias (voltage divider
circuit)

274
Constant current bias
Apply KVL for the “1” loop:
• IBRB + UBE = VB
 IB: constant
Apply KVL for the “2” loop :

• UCE = VCC − ICRC
KVL: Kirchhoff's Voltage Law

KCL: Kirchhoff’s Current Law
275
• IBRB + UBE = VCC
 IB: constant

• UCE = VCC − ICRC
KVL: Kirchhoff's Voltage Law

KCL: Kirchhoff’s Current Law
276
Determine the Q point IB = max
Đường tải tĩnh
 DC load line Ic(mA)
VCC/RC
Điểm làm
K
• VCC = ICRC + UCE việc tĩnh IBQ
ICQ
• Straight line. Q(UCEQ, ICQ)
• UCE = 0  I =
IB = 0
L
• IC = 0  UCE = VCC UCE(V)
UCEQ VCC
 Q point

277
Thermal Stability
• As temperature increases 
IC increases  A move to A’.
• Stronger BJT works  more
temperature increases.
• If no heat sink radiator (tản
nhiệt), A’  A’’...
 Signal is distorted.
 BJT can be damaged.

278
Example
Vc
VB = 5 V ; RB = 107.5 kΩ.
VC = 10 V ; RC = 1 kΩ.
Vγ = 0.6 V ; β = 100.
• Calculate IB ; IC ; UCE
• Determine Q point?
E

279
Calculation iB ; iC ; UCE
Vc
BJT works in the active region  UBE = V
 Apply KVL for the “B-E” loop

• IB = ~ 41 A.
• IC =  IB = 4.1 mA
 Apply KVL for the “C-E” loop

• UCE = VC – ICRC E
= 10 – 4.1(mA)×1(k Ω) = 5.9 V

280
DC Q-Point
Ic (mA)
– DC load line
10
• VC = ICRC + UCE
• Straight line Q
(5.9V - 4.1mA)
• UCE = 0  = = 10 mA
4.1 41 A
• IC = 0  UCE = VCC = 10 V
UCE (V)
5.9 10
– Q Point
• Q locates in the middle of the DC load line  BJT works stable.

281
BJT Biasing
3. Automatic bias (voltage
divider circuit)

282
Polarization using feedback voltage
Apply KVL for the “I” loop
•I =
Apply KCL at the “C” point
• I = IB + IC = IE
Apply KVL for the “II” loop
• VCC = IRC + UCE
−
=
+ (1 + )

283
Feedback voltage bias
Determine the Q point
– DC load line
• VCC = IRC + UCE = R +U
• Straight line
•U =0I =α
• I = 0  UCE = VCC
 Q point

284
Thermal Stability
• As temperature increases
 ICA  ICA’
 A  A’
• UCE decreases  UCEA’
• =
 IB decreases  IC decreases
• A’  A
• Circuit has thermal stability

285
 Negative voltage feedback
 Circuit has thermal stability; but the
current gain decreases
 Solutions:
• Separate RB into 2 resistors which
connect with C capacitor.
• C: short-circuit capacitor for AC signal.
• The feedback AC signal is shorted to the
ground through C capacitor  cannot
back to the Base terminal.

286
BJT Biasing
3. Automatic bias
(voltage divider circuit)

287
Thevenin Theorem
It is possible to simplify any linear circuit, no matter how complex, to an
equivalent circuit with just a single voltage source and series resistance
connected to a load
Một mạch tuyến tính hay phức tạp có thể thay thế dòng và điện áp nguồn
bằng một mạch tương đương có chứa một điện áp độc lập VTH và một điện
trở nối tiếp RTH.

288
Thevenin Theorem
It is possible to simplify any linear circuit, no matter how complex, to an
equivalent circuit with just a single voltage source and series resistance
connected to a load

289
Step #1: e ?

290
Step #2: r ?

291
Results

292
Example

293
Example
VTH = 8 V
RTH = 766.67 Ω

294
Automatic bias
=
+
.
=
+

295
Automatic bias
.
= =
+ +
Apply KVL for the “1” loop:

 VB – IBRB – UBE – IERE = 0
 IE = IB + IC = (1+ )IB
−
=
+ 1+

296
Automatic bias
Apply KVL for the “2” loop
 VCC = ICRC + UCE + IERE
=
1+
We can have:
 = + +
where α =

297
Automatic bias
Determine Q point
 DC load line
+
• = + +
• Straight line.
• UCE = 0  =
• = 0  UCE = VCC
 Q point

298
Automatic bias
Thermal Stability
• As temperature increases +
 ICA  ICA’  IE increases

 A  A’
• VB = IBRB + VBE + IERE
If IB decreases  IC decreases.
• A’ comes back to A.
• Circuit has thermal stability.

299
Automatic bias
 Thermal stability is obtained by the
Emitter current through RE.
 RE : thermal stability resistor.
 The larger the RE , more stable is the
system.
 Most popular.
 However, this negative feedback
decreases the current gain.
 Solutions:
• CE // RE.
• CE: short-circuit capacitor for AC signal.

300
Operating Regions

301
Class A
– BJT works with full-wave input (2 cycles).
– Advantage: Nonlinear distortion ratio is small.
– Disadvantage: Low efficiency  < 50%

302
Class B
– BJT is unbiased, BJT only works with one half-cycle of input.
– Advantage: High efficiency ~78% .
– Disadvantage : Nonlinear distortion ratio is quite large

303
Class AB
 Class AB is somewhere between class A and class B: the
transistor spends more than 50% but less than 100% of the
time conducting current.
 The output waveform will be further “clipped” than it was with
class B biasing, resulting in an operation where the transistor
spends most of the time in cutoff mode.

Common Aplifier
Configuration
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Common Aplifier Configuration
E-C B-C C-C
Emitter Common Base Common Collector Common
B: input E: input B: input
C:output C:output E:output
E: common B: common C: common
E C
C
B ra
vào B ra
vào E

306
E-C Type Circuit
• RB1, RB2: for the BJT biasing. The most common amplifier configuration
for an NPN transistor
• RC: identify amplifier mode.
VCC
• RE: thermal stability.
• Rt: resistor of load. RB1 RC
• en, Rn: value and inside resistor
of supply power. C
Q 2
• C1, C2: input and output C1
capacitor  blocking DC and Rn
RB2 RE Rt
allowing AC signal.
en CE
• CE: short-circuit capacitor for AC
signal, increase the current gain
of the system.
307
E-C Type Circuit
Equivalent Circuit
iv B iB C
Rn rBE=rp iB it
RC Rt
ur
O
uv
RB
en
rv iE Rr
Rv
RB = R1//R2 E

308
Small Signal Amplifier
• The most common configuration for an NPN
transistor
• Using of the DC load line of an amplifier allows
seeing all the possible operating points of the
transistor from fully “ON” to fully “OFF”
• The aim of this circuit is to amplify all of the
input signal with the minimum amount of
distortion possible to the output signal  the
output signal must be an exact reproduction of
the input signal but only bigger (amplified)
• The best possible position for this Q-point is as
close to the center position of the load line as
reasonably possible, thereby producing a Class
A type amplifier operation, ie. Vce = 1/2Vcc

309
Small Signal Amplifier

310

311
B-C Type Circuit
• RE: for the BJT biasing. +VE -VC
• RC: resistor of C terminal.
RE RC
• Rt: resistor of load.
• en, Rn: value and inside Q
resistor of supply power. C1 C2
Rn
• C1, C2: input and output Rt
capacitor  blocking DC en
and allowing AC signal.

312
B-C Type Circuit
Equivalent Circuit
v E re O C
Rn t
RE RC Rt
en
rv Rr
Rv
B
313
C-C Type Circuit
• RB1, RB2: for the BJT biasing. VCC
• RC: resistor of C terminal.
RB1 RC
• RE: resistor of E terminal.
• Rt: resistor of load.
Q
• en, Rn: value and inside C1
Rn
resistor of supply power. RB2 RE
C2
Rt
• C1, C2: input and output en
capacitor  blocking DC and
allowing AC signal.

314
C-C Type Circuit
Equivalent Circuit
uv
ur
RB = R1//R2
Applications
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del Duomo di Milano
316
Application: Amplifier

317

318

319
Application: TDA 7279
TDA7297 15W + 15W

320
Application: TDA 2030

321
Application: TPA3116D2
 Chip: TPA3116D2 +
NE5532
 Điện áp: 12 - 24VDC
 Ngõ vào: jack header 3
pin
 Ngõ ra: 2 kênh
 Công suất: 80W - 80W
 Hiệu suất: > 90%

322
Application: IC

323
Application: IC 741

324
Application: Switch

325
Darlington pair

326
Darlington pair
= + +

327
Darlington pair
NPN Pair PNP Pair

328
Application: ULN 2003A

329

330
Sziklai pair

331
Sziklai pair

332
Darlington & Sziklai
Advantages of Sziklai pair
 Sziklai pair have lower quiescent current for better linear
operations.
 Thermal stability of Sziklai pair is superior to the Darlington pair.
 It has faster response time than Darlington pair.
 The turn-on voltage of Sziklai pair is equal to a normal transistor,
while Darlington takes twice the input voltage.
Disadvantages of Sziklai pair:

 Gain of the Sziklai pair is lesser than the Darlington pair
Darlington Pair Gain: βQ1 × βQ2 + βQ1 + βQ2

Sziklai Pair Gain: βQ1 × βQ2 + βQ1

Chapter 4
OPAMP
& Firma convenzione
del Duomo di Milano
Applications
334
Content
 What is an OPAMP?
 Applications:
1. Comparator
2. Inverting & Non- Inverting Amplifier
3. Voltage Follower
4. Inverting & Non- Inverting summing Amplifier
5. Differential Amplifier
6. Differentiator Amplifier
7. Integrator Amplifier
8. Instrumentation Amplifier

335
OPAMP
 OPAMP (Operational Amplifier)
 Amplifier: give an output which has the same features with

input but larger amplitude
 Operational Amplifier: perform mathematical operations in

linear, non-linear, and frequency-dependent circuits.
 It is a DC-coupled high-gain electronic voltage amplifier with

a differential input and, usually, a single-ended output
 OPAMPs are used widely in electronic devices today, including a

vast array of consumer, industrial, and scientific devices

336
OPAMP

337
OPAMP

338
OPAMP
Power supply +15V  Rin : input resistance.
 Idea OPAMP: =∞
 Vin : voltage of inverting and
i+
Non-inverting non-inverting input.
input
i-
Inverting input
 G : Gain of OPAMP.
i(+), i(-) : input  Idea OPAMP: G = ∞
current of OP-AMP at
 : output resistance
inverting and non-
inverting input -15V  Idea OPAMP: R = 0.

339
OPAMP

340
OPAMP

341
OPAMP

342
OPAMP

343
IC 741

344
IC 741

345
LM324

346
Comparator
−
347
Inverting amplifier
=0
=0
Virtual
Earth

348
Non-inverting Amplifier

349
Voltage Follower
=∞
=0
=
350
Inverting Summing Amplifier

351
Non-inverting Summing Amplifier

352
Differential Amplifier

353
Differentiator Amplifier

354
Integrator Amplifier

355
Instrumentation Amplifier

Chapter 5
Fundamental of
Firma convenzione
Digital Electronics
del Duomo di Milano
357
Content
1. Basic of Digital Electronic
2. Algebraic Logic
3. Basic Logic Functions

Basic of Digital
Electronic
Firma convenzione
del Duomo di Milano
359
Analog vs. Digital
 Analog: Điện tử tương tự
 Digital: Điện tử số
 0V - 0.8V  “0” / LOW
 2.7V - 5V  “1” / HIGH

360
Analog vs. Digital

361
Analog vs. Digital

362
Analog vs. Digital

363
Binary number
 Binary Numbers are the flow of information in the form of
zeros and ones used by digital computers and systems
 Digital circuits process signals that contain just two voltage

levels or states: Logic “0” and Logic “1”.
 Logic “1”: a higher voltage, such as 5V, which is commonly

referred to as a HIGH value
 Logic “0”: a low voltage, such as 0V or ground, and is commonly

referred to as a LOW value

364
Binary number
 These two discrete voltage levels representing the digital values
of “1” and “0” are commonly called: BInary digiTS, and in digital
and computational circuits and applications they are normally
referred to as binary BITS.
 The binary number system is a Base-2 numbering system which
follows the same set of rules in mathematics as the commonly
used decimal or base-10 number system
 Binary numbers use powers of two, ( 2n ) effectively doubling

the value of each successive bit as it goes, for example: 1, 2, 4, 8,
16, 32….

365
Binary number
Electronic circuits and systems can be divided into 2 main
categories.
 Analogue Circuits – Analogue or Linear circuits amplify or
respond to continuously varying voltage levels that can
alternate between a positive and negative value over a
period of time.
 Digital Circuits – Digital circuits produce or respond 2
distinct voltage levels representing either a logic level “1” or
a logic level “0”.

366
3 kinds of Number
 Binary number (base-2)
 Only “0” and “1”
 Decimal number (base-10)
 The decimal or “denary” counting system uses the Base-
of-10 numbering system where each digit in a number
takes on one of ten possible values, called “digits”,
from 0 to 9
 Hexadecimal number
 Hexadecimal Numbers group binary numbers into sets of
four allowing for the conversion of 16 different binary
digits
367
Binary to Decimal
 Base-2 to Base-10
 Decimal, base-10 or denary numbering system
 Important concept to understand as the binary numbering

system forms the basis for all computer and digital systems
 The decimal or “denary” counting system uses the Base-of-

10 numbering system where each digit in a number takes
on one of ten possible values, called “digits”, from 0 to 9,
e.g. 21310

368
Binary to Decimal
Most Least
Significant Bit Significant Bit

369
Binary to Decimal
Binary number: 101100101  Decimal number ?
(256) + (64) + (32) + (4) + (1) = 35710

370
Decimal to Binary
Decimal number: 29410  Binary number ?
Repeated Division-by-2 Method
100100110

371
Binary Number Names & Prefixes

372
Binary to Hexadecimal
 Hexadecimal Numbers group
binary numbers into sets of 4-
bit allowing for the conversion
of 16 different binary digits
 The “Hexadecimal” or simply
“Hex” numbering system uses
the Base of 16 system
 There are 16 possible digit
symbols
 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B,
C, D, E, F
373
Binary number: 1101 0101 1100 11112
 Hexadecimal number: D5CF
Binary number: 11 0010 1101 10012

 Adding of Additional 0’s to a Binary Number

374
Binary Coded Decimal
 Binary Coded Decimal, or BCD, is another process for
converting decimal numbers into their binary equivalents
BCD 8421
375
1101 0101 1100 1111  D5CF
0b1101 0101 1100 1111
0xD5CF
11 0010 1101 1001  32D9

376
7 segment LED
CA: Common Anode

Anode chung
A B C D E F G Dp

377
7 segment LED
0 V = Segment On: B, C, F, G CA: Common Anode
Anode chung
5 V = Segment Off: A, D, E
A
F G B
A B C D E F G Dp
E C
1 0 0 1 1 0 0
D
0b.0001.1001
378
7 segment LED

Mathematical
Firma convenzione
Logic
del Duomo di Milano
380
Mathematical Logic
 Using for digital circuits
 Study the relationship between logic variables
 Logic values involve elements that take on one of two
values, 0 and 1. Therefore, a logic variable can only be
equal to “0” or “1”

381
Mathematical Logic
Logic Negation (Inverse)
x = 1, x = 0 ; x = 0, x = 1 ; (x) = x ; (x) = x
Logic Sum
0+0=0 0+1=1 1+0=1 1+1=1
x+0=x x+1=1 x+x=x x+x=1
Logic Product
0.0 = 0 0.1 = 0 1.0 = 0 1.1 = 1
x.0 = 0 x.1 = x x.x = x x.x = 0
382
Laws of Boolean
Commutative (hoán vị) Absorptive (hấp thu)
x+y=y+x x + x.y = x
x.y = y.x x.(x+y) = x
Associative (kết hợp) Morgan’s Theorem

x+y+z = (x+y)+z = x+(y+z) x + y = x. y
x.y.z = (x.y).z = x.(y.z) x. y = x + y
Distributive (phân phối)
x.(y+z) = x.y+x.z
x+(y.z) = (x+y)(x+z)
383
Laws of Boolean

384
Laws of Boolean

Logic Gate
Firma convenzione
del Duomo di Milano
386
Logic Gates
 If a Boolean function, f, takes n inputs and
produces m outputs, the gate must have n input pins,
and m output pins.

387
AND gate
 Giving a high output only when both input A and input B
are high.
 As an electric circuit involving 2 switches in series: A and B.

388
AND gate
The relationship of inputs and outputs can be expressed
in an equation: Boolean equation.
A B Output
A.B = Y 0 0 0
0 1 0
Ex: Burglar alarm = AND (alarm
switch ; door). 1 0 0
1 1 1

389
Timing Diagram
X
Z
AND Gate
Y
A B Output
0 0 0
0 1 0
1 0 0
1 1 1

390
Working Principle
A
Z
AND Gate
B
A B Output
0 0 0
0 1 0
1 0 0
1 1 1

391
3-input AND gate

392
OR gate
 Giving a high output when input A OR input B are high.
 As an electric circuit involving 2 switches in parallel: A and B

393
OR gate
 The relationship of inputs and outputs can be
expressed in an equation: Boolean equation.
A B Output
A+B=Y 0 0 0
 OR gates can also have more 0 1 1
than two inputs
1 0 1
1 1 1
394
NOT gate
 Just one input and one output
 Giving an output which is the inversion of the input 
inverse gate
 Giving a “1” output when input is “0” and vice versa.

395
NOT gate
 The relationship of input and output can be expressed
A =Y
 A bar over a symbol indicate the inverse of output.
Input Output
1 0
0 1
396
NAND gate
 Can be considered as a combination of an AND gate
followed by a NOT gate
 Output is “0” only when input A and B are “1”
 Symbol: the AND symbol followed by a circle

397
NAND gate
 The relationship of inputs and outputs can be expressed in
an equation: Boolean equation.
A B Output
0 0 1
A. B = Y 0 1 1
1 0 1
1 1 0

398
NOR gate
 Can be considered as a combination of an OR gate followed
by a NOT gate
 Output is “1” only when input A and B are “0”
 Symbol: the OR symbol followed by a circle

399
NOR gate
 The relationship of inputs and outputs can be expressed in
an equation: Boolean equation.
A B Output
0 0 1
A+ B = Y
0 1 0
1 0 0
1 1 0
400
XOR gate
 XOR stands for exclusive OR
 Output will be “1” when the inputs are different
 XOR operation is represented by the symbol 

401
XOR gate
 The relationship of inputs and outputs can be expressed
A B Output
0 0
Y=A⊕B= + 0 1
1 0
1 1
402
XNOR gate
 XNOR stands for exclusive NOR
 It is an XOR gate with its output inverted.
 XNOR operation is represented by the symbol (.)

403
XNOR gate
 The relationship of inputs and outputs can be expressed
A B Output
0 0
Y = A (·) B = + .( + ) 0 1
1 0
1 1

404
Logic gate symbols

405
IC 7400: 2-input NAND gate

406
IC 7402: 2-input NOR gate

407
Application: AND gate

408
Application: AND & OR gate
A B
B
B+
B A B Output
0 0
0 1
1 0
1 1

409
F ( x, y, z )  x. y.z  x. y.z  x. y.z  x. y.z  x. y.z  x. y.z
x.y.z
x.y.z
x.y.z
F
x.y.z
x.y.z
x.y.z

x y z x y z
410
Boolean Expression
Sum of Products (SOP) Form
F = x. y. z + x. y. z + x. y. z
Product of Sums (POS) Form

F= x+y+z x+y+z x+y+z
Note: The SOP is more popular.

411
Example
Design an logic circuit with following functions:
Logic circuit: Previous slide
Comment: Complicated circuit.
Solution: Simplifying the Boolean function

412
Simplifying the Boolean function
Using logic functions/laws to simplify Boolean function
Example: Simplifying using logic laws
F ( x, y, z )  y.z  y.z  x.z
F ( x, y, z )  z  x.z
F ( x, y, z )  z  x.z  x.z
F ( x, y, z )  z  x.
Comment: Not easy or even cannot be successful
Simplifying using the Karnaugh-map

413
Karnaugh-map
xy
00 01 11 10
z
3-variable Karnaugh-map
0
1
xy
00 01 11 10
zt
00
4-variable Karnaugh-map 01
11
10
414
Truth Table Expression
A B C S
0 0 0 0
0 0 1 0
0 1 0 1
S= + + + ABC
0 1 1 0
1 0 0 1
1 0 1 1
Non-inverting variation  1
1 1 0 0
Inverting variation  0 1 1 1 1
415
Karnaugh - map
 Value of variations are expressed in blocks.
 Consecutive blocks have only one different variation.
Example: S = ABC + + +
A B C S
AB B AB A 0 0 0 0
C 00 01 11 10 0 0 1 0
0 1 0 1 0 1 0 1
0
0 1 1 0
1 0 0 1 1
1 0 0 1
1 0 1 1
Not Consecutive Consecutive
1 1 0 0
1 1 1 1
416
Rules
1. Groups may not include any cell containing a zero
2. Groups may be horizontal or vertical, but not diagonal

417
Rules
3. Groups must contain 1, 2, 4, 8, or in general 2n cells.
n≥0

418
Rules
4. Each group should be as large as possible.

419
Rules
5. Each cell containing a one must be in at least one group.

420
Rules
6. Groups may overlap.

421
Rules
7. Groups may wrap around the table. The leftmost cell in a row
may be grouped with the rightmost cell and the top cell in a
column may be grouped with the bottom cell.

422
Rules
7. Groups may wrap around the table. The leftmost cell in a row
may be grouped with the rightmost cell and the top cell in a
column may be grouped with the bottom cell.

423
Rules
8. There should be as few groups as possible, as long as this does
not contradict any of the previous rules.

424
Rules

425
Rules
= + + +

426
Performance Steps
 B1: Convert logic function to the sum of product.
 B2: Set-up the Karnaugh-map according to number of
variations.
 B3: Fill values of logic function to the Karnaugh-map.
 B4: Set-up groups which have “1” value in the
consecutive blocks.
 B5: Re-write simplified functions.

427
Example
Simplifying the Boolean function using Karnaugh-map:
( , , )= . . + . . + . . + . . + . . + . .
Step 1: Convert logic function to the sum of product
Step 2: Set-up the Karnaugh-map according to number

of variations. xy
00 01 11 10
• 3 variations z
0
• Karnaugh-map will be
1

428
Example
Step 3: Fill values of logic function to the Karnaugh-map.
F ( x, y, z )  x. y.z  x. y.z  x. y.z
X Y Z F
0 0 0 0  x. y.z  x. y.z  x. y.z
0 0 1 1 6 blocks Non-inverting variation  1
0 1 0 0 have “1” value Inverting variation  0
0 1 1 1
1 0 0 1 xy
00 01 11 10
1 0 1 1 z
1 1 0 1 0 1 1
1 1 1 1 1 1 1 1 1
429
Example
Step 4: Set-up groups which have “1” value in the consecutive
blocks. xy
00 01 11 10
z A
0 1 1
1 1 1 1 1 B
Step 5: Re-write simplified function.

• F=A+B
• Group A: x = 1 unchanged  keep; y, z change  remove.
So: A = x
• Group B: z = 1 unchanged  keep; x, y change  remove.
So: B = z
Dr. Dang Phuoc Vinh F = A +Faculty
B = xof Mechanical
+z Engineering
430
Example
Simplifying the Boolean function using Karnaugh-map
F ( x, y, z , t )  x. y.z.t  x. y.z.t  x. y.z.t  x. y.z.t
 x. y.z.t  x. y.z.t  x. y.z.t  x. y.z.t
A
xy
00 01 11 10
zt A  z.t B  x. y.t
00 1 1 1 1 C  x.z.t D  x. y.t
01 1 F  A B C  D
11 1 1  z.t  x. y.t  x.z.t  x. y.t
10 1
Dr. Dang Phuoc Vinh DMechanical Engineering
Faculty of
B C
Firma convenzione
the END !
del Duomo di Milano

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TRƯỜNG ĐẠI HỌC BÁCH KHOA

Chapter 2: Diode & Application

Chapter 3: BJT & Application

Chapter 4: OPAMP & Application

Chapter 5: Fundamental of Digital Electronics

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

2. Slide “Kỹ thuật điện tử”, Huỳnh Việt Thắng, DUT

3. Đỗ Xuân Thụ, “Kỹ thuật Điện Tử”, NXB Giáo dục

4. Trần Quang Vinh, “Nguyên lý kỹ thuật điện tử”,

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

 Edison patented 1,093 of his

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

 A low resistivity indicates a material that readily allows

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Resistor Variable Resistor

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering

Dr. Dang Phuoc Vinh Faculty of Mechanical Engineering