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GATE PYQ Complete Book ECE Siddharth Sir
GATE PYQ Complete Book ECE Siddharth Sir
Electronics Engineering
Network Theory
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
15
2H 1 N1 N2
1
+ 5V –
N2
2 1F (a) –105 V (b) +105 V
(c) –15 V (d) +15 V
[EC-1993 : 2 Marks]
1
1 Q.5 A dc circuit shown in figure has a voltage source
V, a current source I and several resistors. A
1H particular resistor R dissipates a power of
4 Watts when V alone is active. The same resistor
N3
1F R dissipates a power of 9 Watts when I alone is
active. The power dissipated by R when both
sources are active will be
2 Electronics Engineering Network Theory
–
(a) 1 W (b) 5 W
(c) 13 W (d) 25 W
(a) 9 V (b) 5 V
[EC-1993 : 1 Mark]
(c) 1 V (d) None of these
Q.6 Two 2 H inductance coils are connected in series [EC-1997 : 1 Mark]
and are also magnetically coupled to each other
the coefficient of coupling being 0.1. The total Q.10 The voltage V in figure is
inductance of the combination can be 3
(a) 0.4 H (b) 3.2 H +
(c) 4.0 H (d) 4.4 H
V 10 V 5V
[EC-1995 : 1 Mark]
(a) 10 V (b) 15 V
(c) 5 V (d) None of these
[EC-1997 : 1 Mark]
2 4
j3
(a) 12 A (b) –12 A
(c) 4 A (d) None of these
Zeq
[EC-1997 : 1 Mark] –j 4
2 4
Q.8 The voltage V in figure is equal to
B
4V
16 8
(a) (b)
3 3
5V 2 4V
8
(c) + 12 j (d) None of the above
3
+ V – [EC-1997 : 2 Marks]
(a) 3 V (b) –3 V Q12 In the circuit shown in the figure the current iD
(c) 5 V (d) None of these through the ideal diode (zero cut in voltage and
[EC-1997 : 1 Mark] zero forward resistance) equals
GATE Previous Years Solved Paper 3
+
10 V 4 1 2A at bt
e V(t) 1H e
–
(a) 0 A (b) 4 A
(a) eat – ebt (b) eat + ebt
(c) 1 A (d) None of these
(c) aeat – bebt (d) aeat + bebt
[EC-1997 : 3 Marks]
[EC-2000 : 1 Mark]
Q.13 The nodal method of circuit analysis is based
Q.17 In the circuit of the figure, the value of the voltage
on
source E is
(a) KVL and Ohm’s law
V2 0V
(b) KCL and Ohm’s law
+ +
(c) KCL and KVL
1V – – 1V
(d) KCL, KVL and Ohm’s law
[EC-1998 : 1 Mark] +
E=?
–
Q.14 The voltage across the terminals ‘a’ and ‘b’ in
figure is 4V +
+ 5V
2 1 – –
a
V1 10 V
4 ZL ZL
(a) 2 V (b) V
3 3-phase
400 V ZL
(c) 4 V (d) 8 V balanced
source
[EC-2000 : 1 Mark]
3 Z , then each branch of the equivalent Wye (a) 90 32.44° (b) 80 32.44°
(c) 80 –32.44° (d) 90 –32.44°
circuit has impedance.
[EC-2002 : 2 Marks]
Z
(a) (b) 3Z
3 Q.24 The minimum number of equations required to
analyze the circuit shown in the figure is
Z
(c) 3 3 Z (d) C C
3
[EC-2000 : 1 Mark]
V R C R
2
16 V +
(a) 3 (b) 4
8A 10 12 eo
(c) 6 (d) 7
6 – [EC-2003 : 1 Mark]
(b) absorbs 80 W
R = 3.92
(c) delivers 40 W
3
(d) absorbs 40 W
[EC-2002 : 1 Mark] V = 2 cos4t
20 V
Q.27 An ideal sawtooth voltage waveform of Q.30 Impedance Z as shown in the given figure is
frequency 500 Hz and amplitude 3 V is
j5 j2
generated by charging a capacitor of 2 µF in
every cycle.
The charging requires j10
j2
(a) constant voltage source of 3 V for 1 ms. j10
(b) constant voltage source of 3 V for 2 ms.
(c) constant current source of 3 mA for 1 ms.
(d) constant current source of 3 mA for 2 ms. Z
Q.28 The equivalent inductance measured between (c) j19 (d) j39
the terminals 1 and 2 for the circuit shown in [EC-2005 : 2 Marks]
the figure is Q.31 If R1 = R2 = R4 = R and R3 = 1.1 R in the bridge
M circuit shown in the figure, then the reading in
1
the ideal voltmeter connected between
L1 L2 ‘a’ and ‘b’ is
R1 R4
2
+
(a) L1 + L2 + M (b) L1 + L2 – M a b
10 V –
+
(c) L1 + L2 + 2M (d) L1 + L2 – 2M –
[EC-2004 : 1 Mark] R2 R3
V (s)
are zero. Its transfer function H (s ) = c is,
Vi (s ) (a) 0.238 V (b) 0.138 V
10 mH
(c) –0.238 V (d) 1 V
10 k
[EC-2005 : 2 Marks]
106
(b)
s 2 + 10 3 s + 106 I 60 V
10 3
(c)
s 2 + 10 3 s + 106
12 A
106
(d) Which of the following can be the value of the
s 2 + 10 6 s + 106
current source I ?
[EC-2004 : 2 Marks]
6 Electronics Engineering Network Theory
(a) 10 A (b) 13 A
(c) 15 A (d) 18 A I
j4 –j 4
[EC-2009 : 1 Mark] + 6
14 0° A
Q.33 A fully charged mobile phone with a 12 V battery –
is good for a 10 minute talk-time. Assume that, 6 6
during the talk-time the battery delivers a
constant current of 2 A and its voltage drops
(a) 1.4 0° A (b) 2.0 0° A
linearly from 12 V to 10 V as shown in the figure.
(c) 2.8 0° A (d) 3.2 0° A
How much energy does the battery deliver
[EC-2011 : 2 Marks]
during this talk-time?
Q.36 In the circuit shown below, the current through
v (t ) the inductor is
12 V
10 V
1 j1
1 0A
t
0 10 min 1 0V 1 0V
– + + –
(a) 220 J (b) 12 kJ
(c) 13.2 kJ (d) 14.4 J
1 0A
[EC-2009 : 1 Mark] –j1 1
+ –
VC VD R
5V 2A
GATE Previous Years Solved Paper 7
Rb Rc
C1
10 V 2 1
Q.40 The following arrangement consists of an ideal +
transformer and an attenuator which attenuates Vs 2A
by a factor of 0.8. An ac voltage VWX1 = 100 V is –
applied across WX to get an open-circuit voltage
VYZ across YZ. Next, an ac voltage VYZ2 = 100 V
1 Q.42 The current Is in amperes in the voltage source,
is applied across YZ to get an open-circuit
voltage VWX2 across WX. Then, VYZ1/VWX1, and voltage Vs in volts across the current source
VWX2/VYZ2 are respectively, respectively, are
(a) 13, –20 (b) 8, –10
W
(c) –8, 20 (d) –13, 20
1 : 1.25
[EC-2013 : 2 Marks]
Y
Q.43 The current in the 1 resistor in amperes is
(a) 2 (b) 3.33
X Z
(c) 10 (d) 12
125 80 100 80 [EC-2013 : 2 Marks]
(a) and (b) and
100 100 100 100
Q.44 Consider the configuration shown in the figure
100 100 80 80
(c) and (b) and which is a portion of a larger electrical network.
100 100 100 100
[EC-2013 : 2 Marks]
8 Electronics Engineering Network Theory
i5
(a) 22 + j2 V (b) 2 + j22 V
i2 (c) 22 – j2 V (d) 2 – j22 V
R R [EC-2014 : 2 Marks]
i3
Q.48 The circuit shown in the figure represents a
i4
i1 R i6
(d) data is insufficient to identify the currents (b) voltage controlled current source
i2, i3 and i6 (c) current controlled current source
[EC-2014 : 1 Mark] (d) current controlled voltage source
[EC-2014 : 1 Mark]
Q.45 A Y-network has resistance of 10 each in two
of its arms, while the third arms has a resistance Q.49 The magnitude of current (in mA) through the
of 11 in the equivalent -network, the lowest resistor R2 in the figure shown is _____ .
value (in ) among the three resistances is __ .
R2
[EC-2014 : 2 Marks]
1k
Q.46 For the Y-network shown in the figure, the value
of R1 (in ) in the equivalent -network is ___ . 10 mA R1 2k R3 4k 2 mA
R1
R4
5
3
3k
[EC-2014 : 1 Mark]
2R R R R
[EC-2014 : 2 Marks]
a R3
e h
R R R R R
R R2 R2 R3
R3
R R R g
f R2
Rab R c
d
R R R R R R1
R2
R1 R2
b R2
[EC-2015 : 1 Mark]
a b
R1
Irms
Q.52 In the given circuit, the values of V1 and V2
respectively are V = 10 sin(t)
(a) 5 V, 25 V (b) 10 V, 30 V
(c) 15 V, 35 V (d) 0 V, 20 V
[EC-2015 : 1 Mark]
0.5Vx
10 b
R1 R2
R1 R1
5 3
R3 +
60 V 0.04Vx 5 Vx
– R2
R1 R1 11 V
[EC-2016 : 2 Marks] R3 R3
5 R1 R1
1A
1 8V The magnitude of the current (in amperes,
accurate to two decimal places) through the
1 1
source is ______ .
8V
[EC-2018 : 2 Marks]
i
Q.60 Consider the circuit shown in the figure.
1
3
5A
[EC-2016 : 2 Marks] 2
7 I
Q.58 A connection is made consisting of resistance A P Q
ELECTRICAL EN GINEERIN G X
2A 2V
(c)
t t
0 2s 0 2s
[EE-1997 : 2 Marks]
(d)
Q.8 For the circuit shown in figure, the capacitance
measured between terminals B and Y will be
[EE-1999 : 2 Marks]
R
Q.11 The circuit shown in the figure is equivalent to
Cc
a load of
Cc
I 2
B Y
Cc
Cs Cs
4 + 2I
–
GATE Previous Years Solved Paper 13
Q.13 Consider the star network shown in figure. The (a) 144 J (b) 98 J
resistance between terminals A and B with (c) 132 J (d) 168 J
terminal C open is 6 , between terminal B and [EE-2003 : 1 Mark]
C with terminal A open is 11 , and between
Q.16 In figure, the potential difference between points
terminals C and A with terminal B open is 9 .
P and Q is
Then,
A
2A
RA
2 R 4
P Q
RB RC +
10 V
–
B
C 8 6
(a) RA = 4 , RB = 2 , RC = 5
(b) RA = 2 , RB = 4 , RC = 7 (a) 12 V (b) 10 V
Q.18 In figure, the value of the source voltage is Q.22 In the figure given below the value of R is
10 Va 1 2A 8A R
P
100 V 10 10
1A 6 E
Q
(a) 2.5 (b) 5.0
(a) 12 V (b) 24 V
(c) 7.5 (d) 10.0
(c) 30 V (d) 44 V
[EE-2005 : 1 Mark]
[EE-2004 : 2 Marks]
Q.23 A 3 V d.c. supply with an internal resistance of
Q.19 In figure, the value of resistance R in is 2 supplies a passive non-linear resistance
10 2A 2
characterized by the relation VNL = I NL . The
power dissipated in the non-linear resistance is
100 V 10 R (a) 1.0 W (b) 1.5 W
(c) 2.5 W (d) 3.0 W
[EE-2007 : 2 Marks]
(a) 10 (b) 20
Q.24 Assuming ideal elements in the circuit shown
(c) 30 (d) 40 below, the voltage Vab will be
[EE-2004 : 2 Marks]
a R
Q.20 In figure, Ra, Rb and Rc are 20 , 10 and 10 +
respectively. The resistance R1, R2 and R3 in
of an equivalent star-connection are 1A Vab i 5V
a –
b
a R1
(a) –3 V (b) 0 V
Rb Rc
R3 R2
(c) 3 V (d) 5 V
[EE-2008 : 2 Marks]
Ra c
c c b Q.25 In the circuit shown in the figure, the value of
(a) 2.5, 5, 5 (b) 5, 2.5, 5 the current i will be given by
(c) 5, 5, 2.5 (d) 2.5, 5, 2.5 1 a b 3
+ Vab –
[EE-2004 : 2 Marks]
Q.27 How many 200 W/220 V incandescent lamps (c) 100 A (d) 200 A
connected in series would consume the same [EE-2010 : 1 Mark]
total power as a single 100 W/220 V
Q.31 If the electrical circuit of Fig. (b) is an equivalent
incandescent lamp?
of the coupled tank system of Fig. (a), then
(a) non possible (b) 4
(c) 3 (d) 2
[EE-2009 : 1 Mark]
Q.32 If the 12 resistor draws a current of 1 A as Q.35 Three capacitors C1, C2 and C3 whose values are
shown in the figure, the value of resistance R is 10 µF, 5 µF and 2 µF respectively have breakdown
voltages of 10 V, 5 V and 2 V respectively. For the
1 R
interconnection shown below, the maximum safe
voltage in volts that can be applied across the
combination, and the corresponding total charge
2A 1A 12 6V
in µC stored in the effective capacitance across
the terminals are, respectively
C2 C3
(a) 4 (b) 6
(c) 8 (d) 18
[EE-2010 : 2 Marks]
C1
Q.33 If VA – VB = 6 V, then VC – VD is
(a) 2.8 and 36 (b) 7 and 119
R VA 2 VB R
(c) 2.8 and 32 (d) 7 and 80
[EE-2013 : 2 Marks]
1 k
0A
[EE-2013 : 1 Mark]
1 0V 1 0V
– + + –
Q.37 The three circuit elements shown in the figure
are part of an electric circuit. The total power
1
0A
2 1
(a) A (b) A 100 V 80 V
1+ j 1+ j
1 15 V
(c) A (d) 0 A
1+ j
[EE-2012 : 1 Mark]
[EE-2014 : 1 Mark]
GATE Previous Years Solved Paper 17
kVo
I
5V 2
1V
1 1
1
1V 2A 1
[EE-2015 : 1 Mark]
– +
5V
18 Electronics Engineering Network Theory
3
B
0.8
5
[EE-2017 : 1 Mark]
[EE-2016 : 1 Mark]
Q.50 The power supplied by the 25 V source in the
Q.46 In the given circuit, the current supplied by the
figure shown below is ______ W.
battery, in ampere, is ________ .
R1
I1 1 1 I2 I
+ 17 V –
+
1V I2 1 25 V 14 A R2 0.4I
[EE-2016 : 1 Mark]
[EE-2017 : 1 Mark]
Q.47 In the circuit shown below, the node voltage VA
Q.51 The equivalent impedance Zeq for the infinite
is _______ V.
ladder circuit shown in the figure is
A I1 5
j9 j9
5 5
5 5A
j5 j5
– Zeq
+ 10I1 10 V ......
–j1 j1
[EE-2016 : 2 Marks]
I 2 3 1 10°
I2
A2
I1
+ 5I A1
20 V 2A –
I3
A3
1 70°
[EE-2019 : 1 Mark]
[EE-2020 : 1 Mark]
Q.53 Currents through ammeters A2 and A3 in the
figure are 1 10° and 1 70° respectively. The
reading of the ammeter A1
(Rounded off to 3 decimal places) is ______ A.
Answers
EC Basics of Network Analysis
9. (d) 10. (a) 11. (b) 12. (c) 13. (b) 14. (c) 15. (d) 16. (d)
17. (a) 18. (d) 19. (c) 20. (a) 21. (d) 22. (a) 23. (d) 24. (a)
25. (a) 26. (*) 27. (d) 28. (d) 29. (d) 30. (b) 31. (c) 32. (a)
33. (c) 34. (a) 35. (b) 36. (c) 37. (b) 38. (a) 39. (b) 40. (b)
41. (c) 42. (d) 43. (c) 44. (a) 45. (29.09) 46. (10) 47. (d) 48. (c)
49. (2.8) 50. (2.62) 51. (100) 52. (a) 53. (8) 54. (1) 55. (d) 56. (5)
57. (–1) 58. (2.143) 59. (8) 60. (0.5) 61. (1) 62. (b) 63. (b)
20 Electronics Engineering Network Theory
1. Sol. 3. (d)
Triangular wave, 0.5 ampere peak, If all resistors are doubled then the current get
1 halved,
Vdt
iL =
L I
So, the current through inductor is the I =
2
integration of the applied voltage across the
inductor. R = 2R
Integration of square wave is a triangular wave. I
V = 2 R = IR = V
So, the current through the inductor is a 2
triangular wave.
Now, v(t) = u(t) – 2u(t – 0.5) + 2u(t – 1) +... 4. (a)
iL(t) = r(t) – 2r(t – 0.5) + 2r(t – 1) +... Current through 5 resistor,
iL(t )
10
i5 = = 2 Amp.
0.5 5
Current through 1 resistor,
0.5 1 1.5 2 2.5 3 t(m-sec) 5
i1 = = 5 Amp.
Ip = 0.5 A 1
So, the current through 15 resistor,
5. (c) i 15 = –(i1 + i5)
N1 : = –(5 + 2) = –7 Amp.
1 1 Voltage across 15 resistor,
Y1(s) = s + +
2s + 1 1 + 2 V15 = 15(i15)
s = 15(–7) = –105 V
2 s2 + 2s + 1
Y1(s) = 5. (d)
2s + 1
N2 : P1 = 4 W, P2 = 9 W
1 1 1+s From superposition theorem,
Y2(s) = + =
2s + 1 2 + 1 2 s + 1 P = ( P1 + P2 )2
s
N3 : = ( 4 + 9)2
1 1+ s
Y3(s) = s + 1
= s+ P = (2 + 3)2 = 25 W
1+ s+1+s
1
1+ 6. (d)
s
L = L1 + L2 ± 2 M
2 s2 + 2s + 1
Y3(s) = = L1 + L2 ± 2 k L1 L2
2s + 1
N4 :
L = 2 + 2 ± 2(0.1) 2 × 2
1 2s 2 + 2s + 1 = 4 ± 0.4
Y4(s) = s + =
2s + 1 2s + 1 L = 3.6 H and 4.4 H
So, N1 and N3 networks having identical driving
point function.
GATE Previous Years Solved Paper 21
7. (b) 1
iD
A
2.5 A 2 2V
i6
i5
Using source transformation,
2 1
iD
Apply KCL at node A, 5V 2V
i0 + i1 + i4 = 0
7 + 5 + i4 = 0
i 4 = –12 A
5 2 3
iD = = = 1 Amp.
8. (a) 2+1 3
Apply KVL, 13. (b)
V+5–4–4 = 0
The nodal or mesh method is based on KCL and
V = 3V
Ohm’s law.
9. (d)
14. (c)
V = V2 A + 2 × 2 + 5
Apply superposition theorem:
= V2 A + 9
For 1 Volt source,
Since, the voltage of 2 A current source is not
2
known. So, it is not possible to find the value of Vab1 = 1 ×
2+2
voltage V.
= 0.5 V
10. (a) For 3 A source,
Voltage in parallel is always equal. 2
Vab3 = 3 × ×2 = 3 V
2+2
11. (b)
The bridge is balanced, Vab = Vab1 + Vab3
12. (c)
R1
iD 5 30
1 R2 R3
2.5 A 4 4 b c
15
2V
5 × 30
R1 = =3
5 + 30 + 15
22 Electronics Engineering Network Theory
15 × 5 20. (a)
R2 = = 1.5
50 Z = 3Z Y
15 × 30 3Z = 3Z Y
R3 = =9
50
Z
ZY =
16. (d) 3
Applying KCL at the node (1), 21. (d)
eat + ebt = iL(t)
Applying source conversion,
d
v(t) = L [ e at + ebt ] 10 2 eo
dt
v(t) = aeat + bebt 16 V
17. (a) 80 V 12
6
V2 0V
1V 1V eo 80 eo eo 16
+ + =0
12 12 6
E 4eo = 112
112
eo = = 28 V
4V 5V 4
22. (a)
V1 10 V
Applying KVL,
0 – 1 – E – 5 – 10 = 0 V1
E = –16 V 20 5I 5 I + =0
5
18. (d) 20 – 10I – 20 = 0
Since diode is forward bias it is taken as short- I=0
circuit. Only dependent source acts,
Applying KCL, V1
= 4A
V 4 V V +2 5
+ + =0 Power delivered = I2R
2 2 2
3V = 2 = 16 × 5 = 80 W
2 23. (d)
V=
3
3Vp Ip cos = 1500
2
Vo = V= VL VL
3 3 cos = 1500
3 3ZL
19. (c)
VL2 cos
Applying KCL, ZL =
1500
eo 12 eo eo
+ + =0 400 2 × 0.844
4 4 4 = = 90
1500
3eo = 12
= cos–1(0.844) = 32.44
eo = 4 V
GATE Previous Years Solved Paper 23
20 V
I 2 –j4
j4 2
I 60 V 14 0°
12 A
Equivalent impedance of the circuit,
33. (c) Z = (2 + j 4) (2 j 4) + 2
P = VI 4 + 16
Z= +2 =7
Energy = P t 4
I = 2 A (Given) 14 0°
Current, I= = 2 0° A
V t = Area under V – t curve 7
1 36. (c)
V t= × 2 × 600 + (10 + 600)
2
A
= 600 + 6000
V t = 6600 i (i + 1)
E = (6600) × 2 = 13200 = 13.2 1 j1
kJ 1A
1 0V 1 0V
34. (a) D
B – – C
+ +
1 3+i i
1A
1 –j1 1
1
i (i + 1)
3A
10 V E
2+i
1A
According to KCL at node D there will be no
2A
1 current in voltage sources.
According to KCL at node A current through
1 inductor will be
i1 = i + 1 ...(1)
Applying KVL in outer loop,
Applying KVL in loop ACDBA we have
(3 + i) 2 + (2 + i) 2 = 10
1 × i + (i + 1) j1 + 1 0 – 1 0 = 0
6 + 2i + 4 + 2i = 10
i + (i + 1) j = 0
4i = 0
(1 + j) i = –j
i=0
j
Power supplied by the voltage across, i= ...(2)
1+ j
P = Vi
Therefore from (1) and (2) we have,
= 10 × 0 = 0 W
j
i1 = i + 1 = +1
35. (b) j+1
Converting delta into star, the circuit can be 1
redrawn as below: i1 =
1+ j
GATE Previous Years Solved Paper 25
Rb Rc Q23 4 × 10 6
RA = V23 = =
Ra + Rb + Rc C 23 10 × 10 6
7
Ra = kRa
28
Rb = kRb = = 2.8 V
10
Rc = kRc In parallel, the voltage is same,
V1 = V23 = 2.8 V
kRb kRc
RA = Charge in capacitor C1,
kRa + kRb + kRc
Q1 = C1V1
k 2 Rb Rc = 10 × 10–6 × 2.8
= = 28 µC
k( RA + Rb + Rc )
In parallel, the total charge,
Rb Rc
= k× Q = Q1 + Q23
Ra + Rb + Rc
Q = 4 + 28
R A = kRA Q = 32 µC
26 Electronics Engineering Network Theory
43. (c)
11
R2 7.53 R3 R R R ....
Req
R R
Using star-delta conversions:
The value of R1 is given by
R R ....
5× 3
= 5+3+ = 10
7.5
2k 4k R
Re Req
I
20 V 8V
R e = R + Req ...(iii)
3k From equation (ii) and (iii) we get,
Applying KVL in above circuit, we get, 1+ 5
20 – 2I – I – 4I + 8 – 3I = 0 Re = R + R = 2.618 R ...(iv)
2
or, 28 = 10I
Re
or, I = 2.8 mA or, = 2.618 = 2.62
R
28 Electronics Engineering Network Theory
a 0.5Vx
Vx 10 Vy
R R R R R R
+
5A Vx 20 8 + 0.25Vx
–
–
Rab R R R R R R
Vx Vx Vy
b + + 0.5Vx = 5 A
20 10
a 1 1 Vy
Vx + + 0.5 = 5 +
20 10 10
13Vx = 100 + 2Vy ...(i)
2R R R 2R and also, Vy = 0.25 Vx ...(ii)
Solving equations (i) and (ii), we have
Rab
52Vy = 100 + 2Vy
b
50Vy = 100 Vy = 2 V
1 Vx = 4Vy = 8 V
1 1 1 1
Rab = + + +
2R R R 2R 54. Sol.
R 300 R3
= = = 100 e h
3 3
52. (a) R2 R2 R3
4 R3 I/6 I/3
g
f R2
I I c
d
R1 I/6
+ + R2
I/3
V2 5A 4 4 2I V1
R1 R2
– I/3 R2
–
I/6
a
R1 I/3 b
Current flowing through both the parallel 4
will be I. I
10 sin(t)
GATE Previous Years Solved Paper 29
R1 R2 R3
4/
I/3 I/6 I/3 1
3
4/3
1
10 sint
3
4/
1 I I
V= ×3 k + ×6 k + ×9 k = 5I 1
3 6 3
V b
or, = 5k
I
For half wave rectifier, Again by star to delta conversion,
Im 10 sin t a
Irms = = = 2 sin t mA
(2) 5k
Im 1
Irms = = 1 mA
2
4
55. (d) 4
1
Req 4
1 1
1
b
1 56. Sol.
1
0.16Vx R1 Vx/5 R2
b
a
+
60 V 0.4Vx 5 Vx
–
1
1
5
R1 R1
1A
1 8V I
A B
R2
1 V1 1
8V R1 R1 11 V
i R3 R3
1 R2
C D
4A I
A B
4A
i = –1 A
R1 R1 11 V
R3 R3
58. Sol.
The connection of resistors is as shown below, C D
RB
R1 R1
RA
RC
10 16
= 2+ =
3 3
RT (max) 80 /7 15 R1 R1
= = = 2.143
RT (min) 16 /3 7
GATE Previous Years Solved Paper 31
R1 R3
= R1 +
2 2
Answers
EE Basics of Network Analysis
Solutions
EE Basics of Network Analysis
6. Sol. 9. (b)
I1 2A I3
I R
E 6 4 1
P = I2 R = 18 W
When resistor R is connected to a voltage source,
Voltage across 4 resistor = 4 × 2 = 8 V
Current through 1 resistor,
8 V R
=8A
I3 =
1
I2 = I3 + 2 = 10 A
V2
V1 = 8 + 1 × 10 P= = 4.5 W
R
= 18 V
Given, V = I (in magnitude)
Current through 6 resistor,
I2R = 18 ...(i)
18
I1 = =3A I2
6 = 4.5 ...(ii)
R
Current through 1 resistor,
On solving these two equations, we get,
I= I1 + I2
I = 3A; R=2
= 3 + 10 = 13 A
E= V1 + I 1 10. (d)
= 18 + 13 × 1 = 31 V
i
iR ic
7. Sol.
For the given waveforms, v(t) C 1F
R 1
di(t )
v(t) = 2
dt
Comparing it with, i = iR + iC
di(t ) iR = v(t)
v(t) = L
dt 1
we get, L = 2H
t
8. (c) ic =
dv(t )
dt
Given circuit can be written as, 1
B Y t
Cc
Cs Cc Cs Cc
i = iR + ic
2
R
1
0 t
C + Cc C + 3Cc
C BY = s + Cc + s –1
2 2
v(t ) dv(t )
i = iR + iC = +1
1 dt
GATE Previous Years Solved Paper 33
I I2 2 By KCL,
+ IP + IQ + IC + IL = 0
I1
2 + 1 + IC + IL = 0
V + 2I dv
–
4 But, IC = C ×
dt
–
d
= 1× (4 sin 2t ) = (8 cos 2t )
Current through 4 resistor, dt
IL = –(2 + 1 + 8 cos2t)
V
I1 = = –3 – 8 cos2t
4
Current through 2 resistor, di
VL = L = 2 × 2 × 8sin 2t
dt
V 2I
I2 = = 32 sin2t
2
Note: KCL is based on the law of conservation
V V 2I
Total current, I = I1 + I 2 = + of charges.
4 2
V V 15. (c)
I= + I
4 2 For 0 < t < 2s current varies linearly with time
3 and given as, i(t) = 3t and for 2s < t < 4s current
2I = V
4 is constant, i(t) = 6 A.
V 8 The energy absorbed by the inductor (Resistance
Load = = neglected) in the first 2 sec,
I 3
T di
12. (d) EL = Li dt = EL1 + EL 2
0 dt
1 T di
Q P EL1 = Li dt
R 0 dt
Therefore resitance of 40 W bulb > resistance of 2
60 W bulb. = 2 × 3t × 3 dt
0
For series connection, current through both the 2
bulbs will be seme P = I2R (for series connection). 2 t2
= 18 t dt = 8 ×
Power consumed by 40 W bulb > power
0 2
0
consumed by 60 W bulb. 4
Hence, the 40 W bulb brighter. = 18 × 0 = 36 J
2
13. (b) The energy absorbed by the inductor in (2 4)
second,
When C is open,
R AB = RA + RB = 6 4 di
EL2 = Li dt
When B is copen,
2 dt
RAC = RA + RC = 9 4
= 2 6 0 dt = 0 J
2
When A is open,
A pure inductor does not dissipate energy but
RBC = RB + RC = 11
only stores it. Due to resistance, some energy is
On solving above equations,
dissipated in the resistor. Therefore, total energy
R A = 2 , RB = 4
absorbed by the inductor is the sum of energy
and RC = 7
stored in the inductor and the energy dissipated
in the resistor.
34 Electronics Engineering Network Theory
2
t3 4 8 14 P 1
= 9× + 36 t 2 = 9 × + 36 × 2 x y
3 3
0
10 A 5A
= 24 + 72 = 96 J
+ 2 +
The total energy absorbed by the inductor in
100 V V V 40 V
4 sec, – –
= 96 J + 36 J = 132 J
16. (c)
VP = 30 V
Given, VR = 10 V
Potential difference between node x and y = 60 V.
By KCL,
By taking KCL at node y,
VP 10 VP
+2+ =0 ...(i) 40 30
2 8 I 5+ =0
1
VQ 10 VQ I = 5A
2+ =0 ...(ii)
4 6 60
I= = 12
5
2A
18. (c)
10 Va 6 P 2A
R
P Q
2 4 6
+
10 V 1A E
–
I
8 6 a
Method-1:
4(VP – 10) + 2 × 8 + VP = 0 Using KCL,
4 VP – 40 + 16 + VP = 0 Va E Va
+ 1 =0
5 VP – 24 = 0 6 6
VP = 4.8 2Va – E = 6 ...(i)
From equation (ii), E Va
6(VQ – 10) – 2 × 4 × 6 + 4VQ = 0 where, =2
6
10 VQ – 108 = 0
E – Va = 12 ...(ii)
VQ = 10.8
Solving equaton (i) and (ii), we get
VP – VQ = –6 V
Va = 18 V
and E = 30 V
GATE Previous Years Solved Paper 35
Method-2 : Rc Ra
I = 2+1=3A R2 =
Ra + Rb + Rc
Apply KVL in second loop,
10 × 20
E = 2 × 6 + 3 × 6 = 30 V = =5
20 + 10 + 10
19. (b) Ra Rb
R3 =
Ra + Rb + Rc
10 P 2A
20 × 10
= =5
20 + 10 + 10
Remember : If all the branches of -connection
100 V 10 R
has same impedance Z, then the impedance of
branch of Y-connection be Z/3.
21. (d)
VP 100 VP
+ +2 = 0 Rms value of dc current = 10 A = Idc
10 10
20
2VP – 100 + 20 = 0 Rms value of sinusoidal current = A = Iac
2
80 Rms value of resultant,
VP = = 40 V
2
IR = 2 2
VP 40 Idc + Iac
R= = = 20
2 2 2
20
= 10 2 +
20. (a) 2
= 17.32 A
a
22. (c)
Rb Rc -Y The resultant (R) when viewed from voltage
Transformation
100
source = = 12.5
Ra 8
c c
a R + 10 10 = 12.5
R1 R = 12.5 10 10
= 12.5 – 5 = 7.5
R3 R2
23. (a)
c INL
b
+
Given, Ra = 20 , Rb = 10
DC R
and Rc = 10 VNL
Non-linear
supply resistor
Rb Rc E
R1 =
Ra + Rb + Rc
–
10 × 10
= = 2.5 2
20 + 10 + 10 VNL = I NL ...(i)
36 Electronics Engineering Network Theory
i1 1k 1k
By KVL in Loop-1,
5 – i1 – i1 = 0 1k 49 i1
5 Vin 100 µF
i1 = = 2.5 A
2 100 µF
Va = 2.5 V
50 i1
By KVL in Loop-2,
4Vab = 3i2 + i2 Applying KVL,
4Vab Vin – i1(1 + 1) – 50 i1(–jXC) = 0
i2 = = Vab
4 Vin = i1[2 – j50XC]]
Vb = 1 × i2 = Vab Vin
Input impedance = =2 j 50XC
Vb = Va – Vb i1
GATE Previous Years Solved Paper 37
36. (b)
1A
–j1 1 Rb Rc
RA =
Ra + Rb + Rc
Ra = kRa
Apply KCL node at ‘A’:
Rb = kRb
So, current flowing through 1 is (1 – I2)
Applying KVL in ABCD loop, Rc = kRc
1 0 – 1 0 + 1(1 – I2) – jI2 = 0 kRb kRc
RA =
1 kRa + kRb + kRc
I2 =
1+ j
k 2 Rb Rc
=
35. (c) k( Ra + Rb + Rc )
Q = CV Rb Rc
= k× = kRA
Q1 = C1V1 Ra + Rb + Rc
= 10 × 10–6 × 10
37. Sol.
= 10 µC
Q2 = C2V2 Given, electrical circuit is shown below:
= 5 × 10–6 × 5 Node
= 25 µC 10 A 8A
Q3 = C3V3
= 2 × 10–6 × 2 = 4 µC 100 V 80 V
R = 30 Power = 5 × 1 = 5 Watt
Hence, I = (2R – 50)
42. Sol.
= (2 × 30 – 50) A = 10 A
current, I = 10 A 2 A 5
+ –
Vo
40. Sol.
10
1V 4V 5A
kVo
1 VI 1
V1 V2
V02
= 12.5
2
1V 2A 1
V02 = 12.5 × 2
V0 = 5
5
I0 = = 2.5 A
2
40 Electronics Engineering Network Theory
43. Sol.
Redrawing the circuit, D C
48. (d) Z1
A C
2
+
5A Z2 Zeq
10 V 5A Vo
B D
– Zeq
So, Vout = (5 × 2) + 10 = 20 V Z 1 = j9
Z 2 = j5 – j1 = j4
49. Sol.
Z2 Zeq
Consider the following circuit diagram, Zeq = Z1 +
Z2 + Zeq
1 2
A By solving above equation,
Zeq = j12
3 6 3 6 1
52. Sol.
B
I 2 Vx 3
0.8
After rearrangement we get,
A
20 V 2A + 5I
1 –
2 3
0.8
B
Applying nodal at node x,
6 Vx 5I
Now, R AB = 1 + + 0.8 = 3 I 2+ =0
5 3
–3I – 6 + Vx – 5I = 0
50. Sol.
8I = Vx – 6 ...(i)
Using KCL at node, we get,
20 Vx
I + 0.4I = 14 As, I=
2
or, I = 10 A
Vx = 20 – 2I ...(ii)
Now, power supplied,
Substituting (ii) in (i),
P = 25 × 10
8I = 20 – 2I – 6
= 250 W
10I = 14
51. (a) I = 1.4 A
Z1 C Z2 53. Sol.
A
I = 1 10° + 1 70°
Z2 Z2 I = 1.732 40°
The ready of ammeter is 1.732 A.
B
D
Zeq Zeq
2 Sinusoidal Steady State
ELECTRO NICS EN GINEERIN G Q.4 In a series RLC high Q circuit, the current peaks
at a frequency
(GATE Previous Years Solved Papers)
(a) equal to the resonant frequency.
Q.1 The value of current through the 1 Farad (b) greater than the resonant frequency.
capacitor of figure is
(c) less than the resonant frequency.
0.5 F (d) none of the above is true.
1 1 2 [EC-1991 : 2 Marks]
1F
2 sin100t Q.5 For the series RLC circuit of Fig. (1), the partial
1 1 1H phasor diagram at a certain frequency is a
0.5 F
shown in Fig. (2). The operating frequency of
the circuit is
(a) zero (b) once
(c) two (d) three VR VL
+ – + –
[EC-1987 : 2 Marks] +
+
Q.2 The half power bandwidth of the resonant V VC
–
circuit of figure can be increased by
–
Fig. (1)
R1 VR
C R2 V
(a) 0.25 (b) 0.5 Q.11 The current i(t) , through a 10 resistor in series
(c) 0.999 (d) 1.0 with an inductance, is given by
[EC-1993 : 2 Mark] i(t) = 3 + 4 sin(100t + 45°
+ 4 sin(300t + 60°) Amperes
Q.7 In figure, A1, A2 and A3 are ideal ammeters. If A1
The rms value of the current and the power
reads 5 A, A2 reads 12 A, then A3 should read
dissipated in the circuit are:
R (a) 41 A, 410 W respectively
A1
0.8 0.4
(c) mA (d) mA (c) =0 =
[EC-1996 : 1 Mark] Em Em Em
E = Em 0°
2 R2 2 R2 2 R2
Q.16 The parallel RLC circuit shown in figure is in
resonance. In this circuit,
IR IL IC E = Em 0°
Em =0
1 mA R L C 2 R2
(rms)
Em
(d) 2 R2
(a) I R < 1 mA (b) I R + I L > 1 mA
Em
(c) I R + IC < 1 mA (d) I L + IC > 1 mA 2 R2 I2
[EC-1998 : 1 Mark]
=
Q.17 When the angular frequency in the figure is
varied from 0 to , the locus of the current phasor
I2 is given by [EC-2001 : 2 Marks]
=0
I2
Q.19 An input voltage v(t ) = 10 5 cos(t + 10°)
(a) =
+ 10 5 cos(2t + 10°) V is applied to a series
combination of resistance R = 1 and an
E = Em 0° inductance L = 1 H. The resulting steady-state
Em Em
2 R2 2 R2 current i(t) in ampere is
GATE Previous Years Solved Paper 45
(a) 10 cos(t + 55°) + 10 cos(2t + 10° + tan–1 2) The quality factor (Q-factor) of this circuit is
3 (a) 25 (b) 50
(b) 10 cos(t + 55°) + 10 cos(2t + 55)
2 (c) 10 (d) 5000
(c) 10 cos(t – 35°) + 10 cos(2t + 10° – tan–1 2) [EC-2004 : 2 Marks]
L 1
(c) R 2 (d) R =
C LC
vi(t ) C v o (t )
[EC-2005 : 1 Mark]
Q.26 For the circuit shown in the figure, the (b) The bandwidth of the circuit remains same
instantaneous current i1(t) is, if L is increased.
j2 –j2 (c) At resonance, input impedance is a real
quantity.
+ (d) At resonance, the magnitude of input
5 0° A 3
impedance attains its minimum value.
i1 10 60° A
– [EC-2010 : 1 Mark]
B +
+
(a) 0 (b) 5 30°
vi R C vo
(c) 12.5 30° (d) 17 30° –
[EC-2007 : 2 Marks] –
Vp t
20 0° V (c) cos
2 RC
Vp t
(a) 8 VAR (b) 16 VAR (d) sin
2 RC
(c) 28 VAR (d) 32 VAR
[EC-2011 : 1 Mark]
[EC-2009 : 2 Marks]
Q.32 Two magnetically uncoupled inductive coils
Q.29 For a parallel RLC circuit, which one of the have Q factors q1 and q2 at the chosen operating
following statements is not correct? frequency. Their respective resistance are R1 and
(a) The bandwidth of the circuit decreases if R R2. When connected in series, their effective Q
is increased. factor at the same operating frequency is
GATE Previous Years Solved Paper 47
1 1 i(t)
(a) q1 + q2 (b) +
q1 q2
[EC-2014 : 2 Marks]
4 0.1 mH 1
(a)
2 LC
1 C
10 cos t (V ) 1 µF (b) 1 R2
2 LC L
1 L
(c) 1
2 LC R 2C
[EC-2015 : 1 Mark]
1 C
Q.38 The damping ratio of a series RLC circuit can be (d) 1 R2
2 LC L
expressed as
[EC-2015 : 2 Marks]
2 2L
R C
(a) (b) Q.42 At very high frequencies, the peak output
2L R 2C
voltage Vo (in Volts) is _______ .
R C 2 L 100 µF
(c) (d)
2 L R C
[EC-2015 : 2 Marks]
1k 1k Vo
Q.39 In the circuit shown, the average value of the 100 µF
1.0 sin( t) V
voltage Vab (in Volts) in steady-state condition
is ______ . 1k 1k
1k 1 µF 1 mH 2k
b a
100 µF
–
Vab +
[EC-2015 : 1 Mark]
5 sin(5000t) 5V
Q.43 In the circuit shown, the current/flowing
through the 50 resistor will be zero if the value
of capacitor C (in µF) is _______ .
[EC-2015 : 1 Mark]
50 I 1 mH 1 mH
Q.40 The voltage (Vc) across the capacitor (in Volts)
in the network shown in ______ .
80 V 40 V Vc 1 mH
5 sin(5000t) C
[EC-2015 : 2 Marks]
IL V1
At resonance, the ratio , i.e., the ratio of the
IR 4 1H
Q.45 In the RLC circuit shown in the figure, the input 1/36 F
voltage is given by
Vi(t) = 2 cos(200t) + 4 sin(500t) [EC-2017 : 2 Marks]
The output voltage Vo(t) is
Q.48 In the circuit shown, V is a sinusoidal voltage
0.25 H 100 µF source. The current I is in phase with voltage V.
amplitude of voltage across the capacitor
+ + The ratio
amplitude of voltage across the resistor
2
0.4 mH 10 µF is ______ .
Vi(t) Vo(t )
5 5H I
2
– –
V 5F
(a) cos(200t) + 2 sin(500t)
(b) 2 cos(200t) + 4 sin(500t)
(c) sin(200t) + 2 cos(500t) [EC-2017 : 1 Mark]
(d) 2 sin(200t) + 4 cos(500t)
Q.49 For the circuit given in the figure, the voltage VC
[EC-2016 : 1 Mark]
(in Volts) across the capacitor is
Q.46 In the circuit shown, the positive angular 100 k
frequency (in radians/second) at which the
magnitude of the phase difference between the +
+
voltages V1 and V2 equals /4 radians, is ____ . 5 sin(5t) V 1 µF VC
– –
V2
1 1 mH
100 k
R1
i (t )
+ Z(j )
C R2 C
v (t ) R R
–
C C
R Im(Z) k
+
Q.54 Consider the circuit shown in the figure with
input V(t) in volts. The sinusoidal steady-state
200 cos(5t) V L
– current I(t) flowing through the circuit is shown
graphically (where ‘t’ is in seconds). The circuit
element ‘Z’ can be _______ .
[EC-2020 : 1 Mark] I(t) 1
V(t) = sin(t) Z
120 –90° V Z
Z = (80 – j35)
I
t = /4
1
A
120 –30° V Z 2
I(t)
0A t
1
A
2
(a) 2.38 –23.63° A (b) 0 A
(c) 2.38 –96.37° A (d) 2.38 143.63° A (a) a capacitor of 1 F
[EC-2020 : 2 Marks] (b) an inductor of 1 H
(c) a capacitor of 3F
Q.53 For the circuit shown, the locus of the
impedance Z(j ) is plotted as increases from (d) an inductor of 3F
zero to infinity. The values of R1 and R2 are: [EC-2022]
GATE Previous Years Solved Paper 51
[EE-1994 : 2 Marks]
A1
Q.9 An energy meter connected to an immersion Q.12 The power dissipated in the resistor R is
heater (resistive) operating on an AC 230 V, (a) 0.5 W (b) 1 W
50 Hz, AC single phase source reads 2.3 units
(kWh) in 1 hour. The heater is removed from the (c) 2W (d) 2 W
supply and now connected to a 400 V peak to
[EE-2011 : 2 Marks]
peak square wave source of 150 Hz. The power
in kW dissipated by the heater will be Q.13 The current IC in the figure above is
(a) 3.478 (b) 1.739 1
(a) –j2 A (b) j A
(c) 1.540 (d) 0.870 2
[EE-2006 : 2 Marks] 1
(c) + j A (d) +j2 A
Q.10 The rms value of the current i(t) in the circuit 2
shown below is [EE-2011 : 2 Marks]
Q.21 In the figure, the voltages are v1(t) = 100 cos( t),
10 A 2A 1 XC1 XL R
[EE-2014 : 2 Marks]
P1 P2 P3
Q.18 The voltage (V) and current (I) across a load are
as follows:
+ + +
V(t) = 100 sin( t)
V1(t) V2(t) V3(t)
i(t) = 10 sin( t – 60°) + 2 sin(3 t) + 5 sin(5 t)
– – –
The average power consumed by the load,
(in Watt), is _______ .
(a) P1 = P2 = P3 = 0
[EE-2016 : 1 Mark]
(b) P1 < 0, P2 > 0, P3 > 0
Q.19 A resistance and a coil are connected in series (c) P1 < 0, P2 > 0, P3 < 0
and supplied from a single phase, 100 V, 50 Hz
(d) P1 > 0, P2 < 0, P3 > 0 [EE-2018 : 1 Mark]
ac source as shown in the figure below. The rms
values of plausible voltages across the Q.22 The voltage across the circuit in the figure and
resistance (V R) and coil (VC) respectively, the current through it, are given by the following
(in Volts) are expressions:
v(t) = 5 – 10 cos( t + 60°) V
VR
i(t) = 5 + X cos( t) A
VS VC where, = 100 radians/s. If the average power
delivered to the circuit is zero, then the value of
X(in Amperes) is _____ (upto 2 decimal places).
Answers
EC Sinusoidal Steady State
9. (c) 10. (b) 11. (c) 12. (1) 13. (a) 14. (b) 15. (d) 16. (b)
17. (a) 18. (b) 19. (c) 20. (a) 21. (a) 22. (d) 23. (b) 24. (c)
25. (b) 26. (a) 27. (d) 28. (b) 29. (d) 30. (a) 31. (a) 32. (c)
33. (b) 34. (0.408) 35. (a) 36. (b) 37. (17.68) 38. (c) 39. (5) 40. (100)
41. (b) 42. (0.5) 43. (20) 44. (0.316) 45. (b) 46. (1) 47. (2.6) 48. (0.2)
49. (c) 50. (a) 51. (2.828) 52. (d) 53. (a) 54. (b)
Solutions
EC Sinusoidal Steady State
1. (a) 1 1
B.W. ; B.W.
The given circuit is a bridge, Q selectivity
If, R1 0
2
1 1+ and R2
s
then the circuit will have only L and C elements
2 sin100t 2+s and has high selectivity.
1F
2
So, the half power bandwidth can be increased
1 1+
s by reducing the selectivity.
So, by increasing the series resistance R1 and
Product of opposite arms are equal,
decreasing the parallel resistance R2, the half
2 2 power bandwidth can be increased.
1 1+ = 1 1+
s s
So, the current through the diagonal element 3. (b)
(1 F capacitor) is zero. Leq = L1 + L2 – 2 M
Leq = 2 + 2 – 2(1) = 2 H
2. (a, d)
At resonance,
Selectivity Q XL = XC
fr 1 1
Q= ; Q
B.W. B.W. Leq =
C
GATE Previous Years Solved Paper 55
2
1 XL = j 2 + j 8 + 2 k j 2 j 8 = j 12
=
LeqC
2 k j4 = j2
1 1 k = 0.25
= = rad/sec.
2×2 2
7. (c)
1
2 f=
2 A32 = A12 + A22
1
f= Hz A32 = (5)2 + (12)2
4
5. (b) V 200
I= = = 20 Ampere
R 10
Given network is the series R-L-C circuit in
Voltage across the capacitor,
resistor R, voltage VR and current IR is in phase
Vc = I(–jXc) = 20(–j20) = –j400
and in series circuit current is same in all the
Vc = 400 –90° V
elements,
I = IR 9. (c)
So, the current is leading the voltage in the For DC supply:
circuit. Inductor behave as short-circuit capacitor
So, the given circuit will behave as capacitive behave as open-circuit.
circuit, So, under steady-state conditions, the applied
VC > VL dc voltage drops entirely across the capacitor
IXC > IXL (C) only.
XC > XL
1 10. (b)
> L
C
Ws = CVs2
1
2 < 1
LC Wc = CVs2
2
2 < 2
r Wc
= 0.5
< r Ws
13. (a) E
At = 0, i2(t) = 0, = , i2 ( t ) = m
R2
x(t )
Option (a) satisfies both conditions.
T1
+V
18. (b)
t
T1 T1 + T2 f0
Q=
–V B.W.
T2
1
Rms value of x(t) f0 =
2 LC
T T1 T1 + T2 R
1 2 1 B.W. =
= x (t ) dt = (V )2 dt + ( V )2 dt
T T1 + T2 L
0 0 T1
2 Rs 1
1 (Characteristic equation = s + + )
= [V 2T1 + V 2T2 ] = V 2 = V L LC
T1 + T2
1 L
or, Q=
14. (b) R C
when R, L, C are doubled,
A12 = A22 + A32 = 32 + 4 2
1
Q = Q = 50
A1 = 5 Ampere 2
1 R R C
= LC =
j C 1 2L 2 L
vo(t) = vi (t ) = 2 sin 10 3 t
1 1 + j CR For no oscillations, 1
R+
j C
R C L
1 3 1; R 2
= 2 sin 10 t 2 L C
1 + j × 10 3 × 10 3
vo(t) = sin(103t – 45°) 25. (b)
22. (b) 1 1
f0 = =
2 LC 1 6
Characteristic equation = s2 + 20s + 106 2 1× × 10
400
Q=
o
, o = 10 6
B.W. 103 × 20 10 4
= = Hz
2
103 1000
Q= = = 50
20 20 26. (a)
28. (b) 1 20
VA + 1 + j 10 3 × 50 × 10 6
=
j 103 × 20 × 10 3
j 10 3 × 20 × 10 3
1 + 2j
j j
VA +1+ = –j1
20 20
20 0° V I 7 + 4j
VA = –j1 V
VA
I= = j1 A
1
20 10 31. (a)
I= = =2 36.87°
8+ 6j 4 + 3j Redrawing the circuit s-domain,
Reactive power,
Q = I2 XL = 4 × 4 = 16 VAR R+
1
sC
29. (d)
Characteristic equation for a parallel RLC +
circuit is 1
V(s ) I(s) R Vo(s )
sC
1 1 –
s2 + s+ =0
RC LC
1
where, Bandwidth =
RC
1
(i) It is clear that the bandwidth of a parallel R
1 sC I (s )
Vi(s) = R+ I (s) +
RLC circuit is independent of L and sC 1
R+
decreases if R is increased. sC
(ii) At resonance, imaginary part of input
1 + sCR R
impedance is zero. Hence, at resonance Vi(s) = I (s) + I (s) ...(i)
sC 1 + sCR
input impedance is a real quantity.
Q v i = Vp cos(t/RC)
(iii) In parallel RLC circuit, the admittance is
minimum at resonance. Hence magnitude 1
So here, =
RC
of input impedance attains its maximum
value at resonance. Now,
(1 + j CR) R
30. (a) Vi(s) = I(s) + I (s)
j C (1 + j CR )
j L VA 1
Put, =
RC
I
1 (1 + j ) R R
20 0° V 1
j C So, Vi(s) = + I (s)
3
= 10 rad/s j 1+ j
Vi (s) 3R
=
(L = 20 mH, C = 50 µH) I (s ) (1 + j )
Nodal analysis at node A, Vi (s )
I(s) = × (1 + j )
VA 20 VA VA 3R
+ + =0
j L 1 1
1
j C Now, Vo(s) = R I (s)
sC
GATE Previous Years Solved Paper 59
33. (b) 4 T3 1
= 3 24
= = 0.408
T 6
I1 10 kW, 0.8 lead
Z1
35. (a)
I2 10 kVA, 0.8 lag t
Z2 1
Given that, Vs = Ri (t ) + i(t ) dt ...(i)
C
0
I Using Laplace transform,
1
V(s) = RI (s ) + I (s) ...(ii)
Real power (kW), Cs
P = VI cos ...(i) V (s)
or, I(s) = ...(iii)
P1 = V × I1 cos 1
R+
Cs
10 × 10 3
Thus, I1 = = 54.34 36.86 ...(ii)
230 × 0.8 1
For, V(s) =
s
60 Electronics Engineering Network Theory
y (t ) 1k 1 µF 1 mH 2k
C b a
–
sin( t) C V ab +
C 5 sin(5000t) 5V
1 5 sin(5000t)
Q A( ) =
4
1 1
=
4 4+9 2
( RC )2
Vab will be sinusoid with average value zero.
2 Average, Vab = 5 V
or, =
3RC
40. Sol.
37. Sol. Vc
80 V 40 V
At resonance,
10 / 2
I=
4
1
= = 10 5 rad/sec
3 6
0.1 × 10 × 10
100 V, 50 Hz
GATE Previous Years Solved Paper 61
41. j5 j5
50
L
1
× ( j L + R) C 5 sin(5000t) j5 C
j C
Zeq = 1 R
× j L+R
j C
R L 1 Z Zeq
+ R j L
j C C C
Zeq = ×
1 1
R+ j L R j L 1
C C j5 × + j5
j C
Equating imaginary part to zero, Zeq = 1
j5 + j5 +
j C
R2 L 1
Img = L =0
C C C I = 0 if Z is
Z = Zeq + 50 + j5
R2 L 1
+ L =0 For Z to be ,
C C C
Zeq =
2 2 2
CR + LC L 1
2
=0 j5 + j5 + =0
C j C
1 R 2C 1
2 = 1 10 =
LC L 5000 × C
1
1 R 2C C= = 20 µF
f = 1 5 × 10 3 × 10
2 LC L
44. Sol.
42. Sol.
At resonance (for parallel RLC circuit),
Circuit contains balanced Wheatstone bridge. IR = I
Also at high frequencies capacitor can be IL = QI –90°
considered as short-circuits. IC = QI –90°
Redrawing the circuit, For parallel RLC circuit,
Vo
IL IQ C
= =Q= R
1k 1k IR I L
1.0 sin( t) 10 × 10 6
= 10 = 0.316
10 × 10 3
1k 1k
62 Electronics Engineering Network Theory
0.25 H 100 µF V2
1 1 mH
+ +
100 cos t i (t ) 1 V1
2
0.4 mH 10 µF
Vi(t) Vo(t)
47. Sol.
– – V1
Q Vo(t) = Vi(t) 4 1H
Open-circuit
= 3 rad/sec,
Z 1 = (4 + j3)
+ + and Z 2 = (5 – j12)
j200 –j 200 V2 =
Vi(t) Vo(t)
i Z2 = i 52 + 12 2 = 13 i
2
– –
V1 = i Z1 = i 4 2 + 32 = 5 i
V2 13 i 13
Vo(t) = Vi(t) = = = 2.6
V1 5i 5
Therefore, Vo(t) = 2 cos(200t) + 4 sin(500t)
GATE Previous Years Solved Paper 63
48. Sol. 1 1 1
Here, XC = = 3 6
= 3
5H
C 10 × 10 10
5 I
XC = 103
+ V –
R
R = 103 (Given)
+
V VC 5F v(t) = 2 sin 1000t V
– = 2 0° V
Redrawing the given network, we get,
5 0°
VC = × ( j 200) V
200 j 200
5 0°× 1 90° –jXC –jXC
=
2 45°
R
5
= 45° V = 2.5 2 sin 5t V
2 4
50. (a)
2R
i (t )
2/3R
–2jXC
–2jXC
C
v (t ) R R R
i(t)
i(t)
C C v (t )
R v (t )
64 Electronics Engineering Network Theory
51. Sol.
V 200 0° XC = 0
Z= = = 20 45° R2
I 10 45°
Z = 10 2 + j 10 2 Z(0)
XL = 10 2
Impedance, Z( ) = R1 = 2 k
L = 10 2 R1 + R2 = 5 k
10 2 R2 = 3 k
L= = 2.828 H
5
54. (b)
52. (d) As the current i(t) is lagging, element Z is
inductor,
I1
V sin t
120 –90° V Z I= ; I=
Z0 Z0
Z = (80 – j35)
Z(0) R2
GATE Previous Years Solved Paper 65
Answers
EE Sinusoidal Steady State
9. (b) 10. (b) 11. (b) 12. (b) 13. (d) 14. (b) 15. (a) 16. (b)
17. (17.332) 18. (250) 19. (*) 20. (1) 21. (c) 22. (10) 23. (0.46)
Solutions
EE Sinusoidal Steady State
1. Sol. 5. (d)
j 10 I1 + I2 + I3 = 0
VL = Vs ×
17.32 + j 10 I3 = –I1 – I2
= –[–6 sin( t)] – 8 cos t
(Using voltage division rule)
= Vs × 0.5 60° Volts 6 8
= 10 sin t cos t
Hence, VL has phase angle of 60° with respect 10 10
to Vs. = –10[cos(36.87°) cos t
– sin(36.87°) sin t]
2. Sol. = –10 cos( t + 36.87°) mA
Q Currents in resistor and inductor well be in
6. (d)
quadrature for same voltage across them.
2 2
IA1 = IA 2
+ IA 8
= 12 2 + 92 = 15 A IR IL IC
E = 10 0° V
I
3. (c) YC
YR YL
When excited by an ac source, capacitor stores
the energy in one half cycle and delivers that
energy in another half cycle. Hence total energy IR = YRE = (0.5 + j0) × 10 0° = 5 A
stored in a capacitor over a complete cycle, when IY = YLE = (0.5 – j1.5) × 10 0°
excited by an ac source is zero. = –j15 A
IC = YCE = (0 + j0.3) × 10 0° = j3 A
4. (a)
I = IR + IY + IC
To find: Rms value of i(t) = 5 + (–j15) + j3 = 5 – j12 A
We have,
i (t ) 7. (a)
2A (rms)
Rms value of dc voltage = Vdc =3V
t (rms)
Rms value of ac voltage = Vac
T/2 T 3T/2 2T
T 4
1 2 = V
Irms = i (t ) dt 2
T
0 Rms value of the voltage
= 1 T 4
2
× 4× = 2 A 32 + = 9+8 =
T 2 = 17 V
2
66 Electronics Engineering Network Theory
Vin 1/2
1 T
So, I = Vrms = V 2 dt
R 2 + ( XL ) T 0
{ }
1/2
1 T /2 T
Vin 2V = 200 2 dt + ( 200)2 dt
= = in T 0 T /2
R 2 5R
R2 + Vrms = 200 V
2
2
Vrms 200 2 3
P2 = = × 10 = 1.739 kW
2 Vin 2 R 23
VR = I R = R= Vin
5R 5
10. (b)
From equation (i),
Vs = 1 sint Vm sin t
2
VR = × ( 2 urms ) Vm = 1 V and = 1 rad/sec.
5
Impedance of the branch containing inductor
2 2 8 and capacitor,
= urms = urms
5 5 Z = j(XL – XC)
9. (b) 1
= j L
C
Assuming resistance of the heater = R
(i) When heater connected to 230 V, 50 Hz 1
= j 1× 1 =0
source, energy consumed by the heater = 1× 1
2.3 units of 2.3 kWh in 1 hour. So, this branch is short-circuit and the whole
current flow through it,
Power consumed by the heater
1.0 sin t
energy 2.3 kWh i(t) = = 1.0 sin t
= = 1
time period 1 hour
1
P1 = 2.3 kW Rms value of the current = A
2
GATE Previous Years Solved Paper 67
11. (b) 1
= × 25 × 5 × cos(36.87°)
2
V(t) = 100 2 cos(100 t )
1 4
Voltage represented in phasor form, = × 25 × 5 × = 50 W
2 5
Vph = Vrms
Alternate method:
100 2
Vph = 0° P = Irms 2 R
2
2
5
i(t) = 10 2 sin 100 t + P= × 4 = 50
4 2
12. (b)
Power supplied by the source = Vs Is cos
V2
where, = angle between Vs and Is = I
4
Inductor and capacitor do not consume power. V12 = V22 + V32 + 2V2V3 cos
Therefore, power dissipated in (220)2 = (122)2 + (136)2 + 2 × 122 × 136 × cos
R = Power supplied by the source cos = 0.45
PR = Vs Is cos
16. (b)
= 1 × 2 × cos Given, RL = 5
4
1 RL
= 2× =1W cos =
2 Z
5
13. (d) Z =
= 11.11
0.45
Using KCL, Power consumed by load,
–Is + IRL + IC = 0
2
IC = Is – IRL V3
PL = RL
Z
= 2 2
4 4 2
136
= 2 90° = +j2 A = × 5 =749.1 750 W
11.11
14. (b)
17. Sol.
i = 5 cos(100 t + 100° A)
= 5 100° A 10 A 2A 1 XC1 10 A XL R 10 A
Z = (4 – j3)
= 5 –36.87° Load
= 99.8 Volt
Voltage drop across load, 10°
5°
V = 200 Volt = VR2 + VXL
2 V1
ELECTRO NICS EN GINEERIN G Q.4 If the secondary winding of the ideal transformer
shown in the circuit of figure has 40 turns, the
(GATE Previous Years Solved Papers)
number of turns in the primary winding for
Q.1 If an impedance ZL is connected across voltage maximum power transfer to the 2 resistor
source V with source impedance Zs, then for will be
maximum power transfer the load impedance
Ideal
must be equal to 8 transformer
(a) source impedance Zs
(b) complex conjugate of Zs
Vg 40 turns 2
(c) real part of Zs
(d) imaginary part of Zs
[EC-1988 : 2 Marks]
Volts
V
Source R=1 Source
j t
j t
‘1’ ‘2’ 4 3
V1 e
V2 e
S1
(a) 1 W (b) 3 W 6 A M1
(c) 4 W (d) 5 W – +
E 10
[EC-1989 : 2 Marks]
8 5
Q.3 A load, ZL = RL + jXL is to be matched, using an
ideal transformer, to a generator of internal
impedance, Zs = Rs + jXs. The turns ratio of the 2 3
transformer required is
[EC-1993 : 2 Marks]
(a) ZL / Zs (b) RL / Rs
Q.6 A generator of internal impedance, ZG delivers
maximum power to a load impedance, ZL only
(c) RL / Zs (d) RL / Zs
if ZL = ______ .
[EC-1989 : 2 Marks] [EC-1994 : 1 Mark]
70 Electronics Engineering Network Theory
Q.11 Use the data of the Fig. (a). The current ‘i’ in the
3k 4k circuit of the Fig. (b).
R2
A B
R
R1 R3
6k 4k
+
10 V R4 2A
[EC-1995 : 1 Mark] R2
Em cos10t RL
–
40
+ 0.5I1 20 RL
25 V 20 3A R
– +
50 V
–
GATE Previous Years Solved Paper 71
(a) 1 resistance. 1
X
(b) 1 resistance in parallel with 1 H
i
inductance.
(c) 1 resistance in series with 1 F capacitor. 2i + 1 2A 2
–
(d) 1 resistance in parallel with 1 F capacitor.
[EC-2003 : 1 Mark]
Y
Q.15 The maximum power that can be transferred to
the load resistor RL from the voltage source in
4 2
the figure is (a) V, 2 (b) 4 V,
3 3
100 4 2
(c) V, (d) 4 V, 2
3 3
+ [EC-2007 : 2 Marks]
10 V RL
–
Q.19 The Thevenin equivalent impedance Z Th
between the nodes P and Q in the following
(a) 1 W (b) 10 W circuit is
1A I1
a + 1
(a) 1 (b) 1 + s +
0.5I1 +
– 5 10 V s
b –
1 s2 + s + 1
(c) 2 + s + (d)
s s2 + 2s + 1
(a) 5 V and 2 (b) 7.5 V and 2.5 [EC-2008 : 2 Marks]
(c) 4 V and 2 (d) 3 V and 2.5
Q.20 In the circuit shown, what value of R L
[EC-2005 : 2 Marks]
maximizes the power delivered to RL?
72 Electronics Engineering Network Theory
ib
4 4
–
Vx + 1k 99ib
Vt 100 V RL
9k
1
100
2
8
(a) 2.4 (b)
3
(a) 50 (b) 100
(c) 4 (d) 6
(c) 5 k (d) 10.1 k
[EC-2009 : 2 Marks]
[EC-2012 : 1 Mark]
Q.21 In the circuit shown below, the Norton
equivalent current in amperes with respect to Q.24 Assuming both the voltage sources are in phase,
the terminals P and Q is the value of R for which maximum power is
transferred from circuit A to circuit B is,
j30
P
2 R
16 0° A 25 –j 50 + +
10 V –j 1 3V
– –
Q
15
Circuit A Circuit B
(a) 6.4 – j4.8 (b) 6.56 – j7.87
(c) 10 + j0 (d) 16 + j0 (a) 0.8 (b) 1.4
[EC-2011 : 1 Mark] (c) 2 (d) 2.8
[EC-2012 : 2 Marks]
Q.22 In the circuit shown below, the value of RL such
that the power transferred to RL is maximum is Q.25 A source vs(t) = V cos100 t has an internal
impedance of (4 + j3) . If a purely resistive
10 10 load connected to this source has to extract the
maximum power out of the source, its value
10 (in ) should be
(a) 3 (b) 4
5V 1A RL
(c) 5 (d) 7
2V
[EC-2013 : 1 Mark]
3 j4 j6 5 2
+ –
VL1
Vs I1 + + I2 RL = 10
– – 4 0 Vrms j2 RL
j40I2 10 VL1
5V 1A 10 12 V 1A 6
Q.29 In the circuit shown in the figure, the angular Q.33 In the circuit shown in the figure, the maximum
frequency (in rad/sec), at which the Norton power (in Watt) delivered to the resistor R is
equivalent impedance as seen from terminals _______ .
b-b is purely resistive, is ________ . 3k 10 k
1 1F
b
+
+ 5V 2k Vo 100Vo +
– 40 k R
10 cos t (Volts) 0.5 H –
–
b
[EC-2016 : 2 Marks]
[EC-2014 : 2 Marks]
Q.34 In the circuit shown below, V s is constant
Q.30 In the given circuit, the maximum power voltage source and IL is a constant current load.
(in Watts) that can be transferred to the load The value of IL that maximizes the power
RL is _____ . absorbed by the constant current load is
74 Electronics Engineering Network Theory
R 1 2
+
5V R 1A
Vs IL
–
(a)
Vs Vs 1 2
(a) (b)
4R 2R
Vs
(c) (d) ? R 5V
R
[EC-2016 : 1 Mark]
(b)
Q.35 Consider the circuit shown in the figure.
(a) 0.5 A (b) 2.5 A
–+ (c) 1 A (d) 2 A
3io
[EC-2019 : 1 Mark]
P
1 io Q.37 In the circuit shown below, the Thevenin voltage
VTh is
10 V 1 1 2V 2 4
+
Q
1 1A 1 2A 2 VTh
[EC-2017 : 2 Marks]
(a) 2.8 V (b) 3.6 V
Q.36 Consider the two-port resistive network shown (c) 2.4 V (d) 4.5 V
in the figure. When an excitation of 5 V is [EC-2020 : 1 Mark]
applied across port-1 and port-2 is shorted, the
current through the short-circuit at port-2 is ELECTRICAL EN GINEERIN G
measured to be 1 A [see (a) in the figure]. (GATE Previous Years Solved Papers)
Now, if an excitation of 5 V is applied across
port-2, and port-1 is shorted [see (b) in the SECTIO N - A
figure], what is the through the short-circuit at Q.1 The following circuit shown in figure resonates
port-1? at
1 2 4H 1F
10
Port-1 R Port-2
1F
GATE Previous Years Solved Paper 75
(a) all frequencies (b) 0.5 rad/sec (a) a semicircle with a diameter of V/X.
(c) 5 rad/sec (d) 1 rad/sec (b) a straight line with a slope of R/X.
[EE-1993 : 1 Mark] (c) an ellipse with V/R as major axis.
(d) a circle of radius R/X and origin at (0, V/2).
Q.2 At resonance, the given parallel circuit
[EE-1998 : 1 Mark]
constituted by an iron-cored coil and a capacitor
behaves like Q.6 A circuit with a resistor, inductor and capacitor
in series is resonant at f0 Hz. If all the component
a values are now doubled, the new resonant
frequency is
R (a) 2 f0 (b) still f0
C f0 f0
L (c) (d)
4 2
b
[EE-1998 : 1 Mark]
Q.10 In a series RLC circuit at resonance, the Q.14 The value of Z in figure which is most
magnitude of the voltage developed across the appropriate to cause parallel resonance at
capacitor 500 Hz is
(a) is always zero.
(b) can never be greater than the input voltage. 5
230 V C ZL = 30 40°
50 Hz I
V2
(a) 68.1 µF (b) 165 µF
(c) 0.681 µF (d) 6.81 µF
V1
[EE-2002 : 2 Marks] Vc
5 0°
L VL
Vc
GATE Previous Years Solved Paper 77
Vc Im
(c) V1
(c)
V2 I
Re
V1
Im
V2
(d)
(d)
I
Re
Vc
Q.16 The RLC series circuit shown is supplied from Q.17 In the figure given below all phasors are with
a variable frequency voltage source. The reference to the potential at point ‘O’. The locus
admittance locus of the RLC network at of voltage phasor VYX as R is varied from zero to
terminals AB for increasing frequency is infinity is shown by
A R
V 0° R
L VYX
X Y
V 0° C
B C
Im
O
O 2V Locus of VYX
(a) Re VYX
(a) V YX (b)
Locus of VYX 2V O
Locus of VYX
O 2V
Im
VYX VYX
(c) (d)
O 2V
Locus of VYX
(b) Re
[EE-2007 : 2 Marks]
0.1 H z
Inductive
1F 1
(a) f
1 1
(a) q1 + q2 (b) + z
q1 q2
Inductive
q1 R1 + q2 R2 q1 R2 + q2 R1
(c) (d) Capacitive
R1 + R2 R1 + R2 (c)
[EE-2013 : 2 Marks]
f
Q.20 A series RLC circuit is observed at two
frequencies. At 1 = 1 k-rad/s, we note that
source voltage V1 = 100 0° V results in a current z
I1 = 0.03 31° A.
At 2 = 2 k-rad/s the source voltage Inductive
(d) f
V2 = 100 0° V results i a current I2 = 2 0° A. Capacitive
The closest values for R, L, C out of the following
options are:
(a) R = 50 , L = 25 mH, C = 10 µF
[EE-2015 : 1 Mark]
(b) R = 50 , L = 10 mH, C = 25 µF
(c) R = 50 , L = 50 mH, C = 5 µF Q.22 The circuit below is excited by a sinusoidal
(d) R = 50 , L = 5 mH, C = 50 µF source. The value of R in , for which the
admittance of the circuit becomes a pure
[EE-2014 : 2 Marks]
conductance at all frequencies is _______ .
Q.21 An inductor is connected in parallel with a
100 µF R
capacitor as shown in the figure.
L
i
Z 0.02 H R
C
L C L
i(t)
C C
L
(b) v(t)
(5, 0)
[EE-2016 : 2 Marks]
i (t ) L i (t )
a
+
V(t )
100 µF 100 (d) v(t)
(–5, 0)
Z
–
b
S i(t) 5V
+ 1F
L=1H
t=0 10 sint
+ –
5V C=1F v (t )
– (a) zero (b) 5
(c) 7.07 sint (d) 7.07 sin(t – 45°)
[EE-1993 : 1 Mark]
80 Electronics Engineering Network Theory
Q.2 Superposition principle is not applicable to a (a) 56.66 45° (b) 60 30°
network containing time-varying resistors. (c) 70 30° (d) 34.4 65°
(True/False) [EE-2003 : 1 Mark]
[EE-1994 : 1 Mark]
Q.6 Two a.c. sources feed a common variable
Q.3 For the circuit shown in figure. The Norton resistive loads as shown in figure. Under the
equivalent source current values is ________ . maximum power transfer condition, the power
A and its resistance is ______ . absorbed by the load resistance RL is
3
A 6 j8 6 j8
3
6V 3 110 0° V i1 RL i2 90 0° V
B Q
+
100 0° Z2
–
Y
Y
GATE Previous Years Solved Paper 81
B
+ +
Q.10 For the circuit given above, the Thevenin’s 10 V –j1 3V
Q.11 For the circuit given above, the Thevenin’s (c) 2 (d) 2.8
voltage across the terminal A and B is [EE-2012 : 2 Marks]
(a) 1.25 V (b) 0.25 V Q.15 A source vs(t) = V cos100 t has an internal
(c) 1 V (d) 0.5 V impedance of (4 + j3) . If a purely resistive
[EE-2009 : 2 Marks] load connected to this source has to extract the
maximum power out of the source, its value
Q.12 In the circuit given below, the value of ‘R’
required for the transfer of maximum power to (in ) should be
the load having a resistance of 3 is (a) 3 (b) 4
(c) 5 (d) 7
[EE-2013 : 1 Mark]
1 1H
[EE-2013 : 2 Marks]
When 3 V is applied to port-1, the current Q.27 For the given two-port network, the value of
(in Ampere) through a 2 resistance connected transfer impedance Z21 (in ) is ______ .
across port-2 is ______ . 2
[EE-2015 : 2 Marks]
5 6V [EE-2017 : 1 Mark]
I
50 40 25 20
[EE-2017 : 2 Marks]
20
Q.25 In the circuit shown below, the value of capacitor
200 V 160 V 100 V 80 V
C required for maximum power to be transferred
to the load is
[EE-2019 : 2 Marks]
Rs = 0.5
Q.29 The Thevenin equivalent voltage, VTh (in Volt)
(Rounded of to 2 decimal places) of the network
5 mH
shown below, is ______ .
V(t) = 10 sin(100t) 2 3
1 C
+
4V 3 5A VTh
Load
(a) 1 nF (b) 1 µF
–
(c) 1 mF (d) 10 mF
[EE-2017 : 2 Marks] [EE-2020 : 1 Mark]
Q.26 For the network given in figure below, the Q.30 A benchtop dc power supply acts as an ideal
Thevenin’s voltage Vab is 4 A current source as long as its terminal voltage
is below 10 V. Beyond this point, it begins to
10 10 behave as an ideal 10 V voltage source for all
load currents going down to 0 A. When
a connected to an ideal rheostat, find the load
6A 5 10 16 V resistance value at which maximum power is
b transferred, and the corresponding load voltage
and current.
(a) 2.5 , 4 A, 10 V (b) 2.5 , 4 A, 5 V
(a) –1.5 V (b) –0.5 V
(c) Open, 4 A, 0 V (d) Short, A, 10 V
(c) 0.5 V (d) 1.5 V
[EE-2020 : 2 Marks]
[EE-2017 : 2 Marks]
84 Electronics Engineering Network Theory
Answers
EC Network Theorem
9. (a) 10. (c) 11. (c) 12. (a) 13. (a) 14. (c) 15. (c) 16. (b)
17. (d) 18. (d) 19. (a) 20. (c) 21. (a) 22. (c) 23. (a) 24. (a)
25. (c) 26. (c) 27. (d) 28. (0.5) 29. (2) 30. (1.649) 31. (1.33) 32. (10)
33. (0.8) 34. (b) 35. (–1) 36. (c) 37. (b)
Solutions
EC Network Theorem
1. (b) 2
n2 2 1
According to maximum power transfer theorem, = =
n1 8 4
ZL = ZS
n2 1
=
2. (a) n1 2
P1 = 1 W; P2 = 4 W n1 = 2n2
Since the polarity of both the sources are = 2 × 40 = 80
different,
5. Sol.
P = ( P1 P2 )2 Across switch S1,
2 2 ISC = 5 A
P= ( 1 4) = (1 2)
P = 1W RTh = [(4 6 + 2 8) + 3 + 3] 10 + 5
3. (a) RTh = (2.4 + 1.6 + 3 + 3) 10 + 5
2
ZL n2 = 10 10 + 5 = 5 + 5
=
ZS n1 RTh = 10
VOC = VAB = ISC RTh = 5 × 10 = 50 V
n2 ZL
=
n1 ZS 6. Sol.
4. (c) ZL = ZG
2 Z G = RG + jXG
n2 ZL
= ZL = RG – jXG
n1 ZS
GATE Previous Years Solved Paper 85
100 0° 3 = 10 + 10 j = 10 2 45°
A
= 14.14
20
KCL at node 1,
V V
0.5I1 + I = +
20 40
V V V
0.5 +I = +
R = (5 20) + 4 = 4 + 4 40 20 40
=8
1 1 1
I= V +
11. (c) 20 40 80
This is a reciprocal and linear network. V
= RTh = 16
According to reciprocity theorem which states I
“Two loops A and B of a network N and if an RL = RTh = 16
ideal voltage source E in loop E produces a
86 Electronics Engineering Network Theory
14. (c) 1 1 1 2
So, 2 = VTh + +
ZL = Rs – jXs 2 1 1 1
ZL = 1 – 1j VTh = 4 Volt
From the figure Isc = 2 Ampere
15. (c)
For maximum power transfer, VTh 4
So, RTh = = =2
RL = Rs = 100 I sc 2
V2 5× 5 19. (a)
P= = = 0.25 W
R 100
P 1/s
(V across RL = 5 V) s
16. (b)
For VTh : 1 1
Vab Vab 10
+ =1
5 5
(when current source is in series with voltage
Q
source effect of current source is taken),
2Vab = 15 Vab = 7.5
1
(s + 1) 1 +
0.5I 1 5 1 s
= R = 10 ZTh = (s + 1) 1+ =
I1 R s 1
(s + 1) + 1 +
(Impedance connected to 0.5I1 current source) s
For RTh, make independent sources dead,
(s + 1)2 / s
5 = =1
a (s + 1) (s + 1)/ s
20. (c)
10 5
Vx
4 I1
–+
b
4 4 I
RTh = 5 5 = 2.5 –
Vx +
17. (d) 1V
ZL = Rs – jXs 1
Req =
I
For maximum power transfer,
ZL = Zs For Pmax : RL = Req
ZL = Rs – jXs KVL, 1 = 4I1 + Vx ...(i)
Vx = 4(I – I1) ...(ii)
18. (d) 1
Simplifying, Req = =4
For VTh, applying KCL at node X, I
VTh VTh VTh 2i
2 = + + 21. (a)
2 1 1
For Norton equivalent current short circuiting
VTh
where, i= the terminal PQ.
1
GATE Previous Years Solved Paper 87
j30 A iAB B
Isc Isc 1
P
ib iA
I=0
2
Q
15 To find Thevenin impedance across node
Short-circuit current, 1 and 2. Connect a 1 V source and find the
current through voltage source.
25
ISC = × 16 0° 1
15 + j 30 + 25 Then, ZTh =
I
25 (25 × 16) 0° By applying KCL at node B and A,
= × 16 0° =
40 + j 30 50 36.86 iAB + 99ib = I
= 8 –36.86° ib = iA + iAB
Hence Norton current is, ib – iA + 99ib = I
IN = ISC = 8 –36.86° 100ib – iA = I ...(i)
IN = (6.4 – j4.8) A By applying KVL in outer loop,
10 × 103 ib = 1
22. (c)
ib = 10–4 A
For maximum power transfer, and 10 × 103 ib = –100 iA
RL = RTh i A = –100 ib
To calculate R Th deactivate all the energy From equation (i),
sources. 100ib + 100ib = I
10 10 I = 200ib
= 200 × 10–4 = 0.02
10 1 1
ZTh = = = 50
I 0.02
O.C.
i 2 R i1
RTh = 10 + 10 10 = 15
23. (a) + +
10 V –j 1 3V
ib – –
2
7 98 R 21
3 =0
2+R (2 + R ) (2 + R )2
49(2 + R) – 98R – 21(2 + R) = 0
28. Sol.
98 – 42 = 49R + 21R
5 5
56
R= = 0.8
70 I
25. (c) 5V 1A 10
For pure resistive load to extract the maximum
power,
2 2
RL = Zs = Rs + Xs Using superposition theorem:
When 5 V source acting alone, we get
= 4 2 + 32 = 5
5 5
26. (c)
I1
To find VTh, open-circuit the load voltage RL
then, 5V 10
3 j4 j6 5
+ –
I2 = 0
VL1
Vs I1 j40I2 +
–
+
– 10 VL1 VTh V 5 1
I1 = = = A ...(i)
Req 10 + 5 + 5 4
When 1 A source acting alone, we get
I2 = 0 5 5
j40I2 = 0
Vs ( j 4) I2
VL1 =
3 + j4
1A 10
100 53.13°
= × 4 90°
5 53.13°
VL1 = 80 90°
1× 5 5 1
I2 = = = A ...(ii)
VTh = 10 VL1 + I 2 j6 + I 2 3 5 + 10 + 5 20 4
VTh = 10 × 80 90° + 0 × j6 + 0 × 3 1
Therefore, I = I1 + I 2 = A = 0.5 A
VTh = 800 90° V 2
GATE Previous Years Solved Paper 89
29. Sol.
1.414 45°
R 1/j
b 2.828 45° 1.414
I
j 0.5
2.828 45°
I= = 1.08 22.5°
b Zbb 1.414 45° + 1.414
Finding ZN : 2
Power = I2R = (1.08) × 2 = 1.649 W
1 × j 0.5 1 j 1
Zbb = + = + 31. Sol.
1 + j 0.5 j 2+ j j
2 2 Io
2 +j a
or, Zbb = 2 ...(i)
2j
Retionalizing equation (i), we get, 4I + 2 4 Vo
–
2 2
(2 )+ j j2 I1 I
Zbb = 2
× 2 b
2j j2
Vo
2 2 + 4 +2 2 ( 3 4 ) I=
+j 4 4
= 4
+2 2 +2 2 Vo
I1 =
In order to have a purely resistive impedance 2
Zbb the imaginary part of equation (ii) will be Applying KCL,
Vo
4 I Vo Vo
equaled to zero. + + = Io
2 2 4
4 + 3 From there,
4 =0
+2 2 3
or, 3 = 4 Vo = Io
4
or, = 4 = 2 rad/sec. Vo 4
RN = = = 1.33
Io 3
30. Sol.
32. Sol.
2
3 VA
a
4 0 Vrms j2 RL
12 V 1A 6
RL = ZTh = 2 j2 VTh = V6
VA 12 VA
2 × j2 + =1
= = 1.414 3 6
2 + j2
1 1
8 90° VA + = 1+4
VTh = = 2.828 45° 3 6
2 + j2
90 Electronics Engineering Network Theory
3
VA =5 –+
6
3io
VTh = V6 = VA
= 10 V P
1 io
33. Sol.
1 1
3k 10 k
+ + Q
5V 2k Vo 100Vo +
– 40 k VTh 1 RTh
– –
10 × 40
= =8k 3io
50
–+
2
VTh
Max. power = (1 – 4io)
4RTh 1 P
–
160 × 160 3io + io
1A +
= = 0.8 W
4 × 8000 +
L Vx 1A
Vx 1
34. (b) –
1 –
In maximum power transformation, half of the
+ – (1 – i ) 1A Q
voltage drops across source resistance, (1 – io) o
36. (c) 4
2V VTh
1 2 4
3.6 V
1V 2A 2 VTh = 3.6 V
Answers
EE Network Theorem (Section-A)
9. (a) 10. (c) 11. (a) 12. (b) 13. (c) 14. (d) 15. (a) 16. (d)
17. (a) 18. (c) 19. (c) 20. (b) 21. (b) 22. (14.14) 23. (3.03) 24. (50)
25. (b)
Solutions
EE Network Theorem (Section-A)
1. (b) 2. (d)
j j 1 R j L 1
Z = 10 + j 4 Y= × +
R+ j L R j L jXc
R j L j
1 Y= +
4 2
2
R + ( L) 2 Xc
= 10 j
2 Imaginary parts are equal to zero for resonance,
4
L
= C
For circuit to be in resonance imaginary part of R + ( L )2
2
3. Sol. V
For R = 0, I = 90°
Q0 = 0.032 X
For series RLC circuit V
For R = X, I = 45°
L 2X
Q-factor at resonance = o
R For R = , I = 0 0°
1 1 On plotting these three points we get,
o =
=
LC (0.01) × (100 × 10 3 )
Im
= 10 10 rad/sec.
R=
Re
L 10 0 × 0.01
Q= o = = 0.032
R 10
4. (d)
V/X R=X
L
Q=
R
When frequency of operation is doubled,
= 2 f, also get doubled
R=0
Consequently, Q also get doubled
2
2 V Hence locus of I is a semi-circle having
P= I R R
2 2 diameter of V/X.
R + ( L)
6. (d)
V2 V2
= =
L
2 R (1 + Q 2 ) 1
R2 1 + f0 =
2 LC
R
(for series RLC resonance)
Q It is given that Q is high.
1
Q2 >> 1 fnew =
2 2 L × 2C
V2 (when all the components values are doubled)
P
RQ 2 f0
Hence, fnew =
Q Q is doubled. 2
P decreased 4 times. 7. (a)
5. (a)
–j 0.02
I R jX
C
R j0.01
V, f
YAB
A B
V
I= 1 1
R + jX Y AB = +
j 0.02 R + j 0.01
V 1 X
= tan For R = 0, Y AB = –j50 = 50 –90°
R2 + X 2 R
GATE Previous Years Solved Paper 93
12. (b)
Hence, locus of YAB is a semicircle of diameter
1 1
= = = 10 5 r/s
j100 and center at zero. o LC 100 × 10 6
× 10 6
8. (d) R 50
= = 6
= 50 × 10 4 r/s
L 100 × 10
Resonance frequency
Q=
Bandwidth 2
2
f 0 100 lower = 0 +
= = = 20 2 2
f 5
At resonance, 2
5 × 105 5 × 105
VL = VC = Q Vsource = (105 )2 +
2 2
VL = 20 × 10 = 200 V
5
= 10 1 + 6.25 2.5
9. (a)
= 0.193 × 105 rad/sec
Q VL = –VC (Given)
Hence,
So, this is a case of RLC series resonance.
V lower 0.193 × 10 5
Hence, I= (at resonance) flower = =
R 2 2
100 = 3065 Hz 3.055 kHz
= =5A
20 13. (c)
10. (c) V = VR + i(VL – VC)
In a series RLC circuit, at resonance Since, VL = VC and VL
VL = jQVsource
= 2 VR
and VC = –jQVsource
Therefore, the circuit is at resonance and
Also for Q > 1,
VR = V
VC = Vsource
VL VL 2VR
Hence option (c) is correct. Quality factor = = = =2
V VR VR
94 Electronics Engineering Network Theory
I I [By rationalization]
Separating, real and imaginary part of
RA RB
admittance,
V2 R
XL Re[Y] = 2
1
V1
R2 + L
L
XC VC
For any value of , the real part of always
positive.
Z = RA + RB + j(XL – XC) 1
At resonance, XL = XC When, L=
C
So, Z = RA + RB 1
Therefore, input impedance is purely resistive, At, o = (Resonance)
LC
is minimum, and the input voltage and output 1
current are in phase. Re[Y] = (Maximum value)
R
So, V1 and I are in phase.
1
V1 L
V2 = × [ RB + j( XL XC )] C
RA + RB + j( XL XC ) Im(Y) =
1 2
R2 + L
But, XL = XC C
V1 1
V2 = × RB L
RA + RB C
= 2
Therefore, V2 is in phase with V1 and V2 < V1. 1
R2 + L
C
GATE Previous Years Solved Paper 95
1 R + jXC
At, o = (Resonance) VYX = V
LC R jXC
Imaginary part of zero
When, R=0
Im(Y) = 0
For, 0 < < o 0 + jXC
VYX = V =V
0 jXC
1
> L
C XC
1+ j
Therefore, Im[Y] > 0 R
VYX = V×
For, XC
o< < 1 j
1 R
< L When, R
C
Therefore, Im[Y] < 0 VYX = –V
On the basis of above analysis, the admittance
18. (c)
locus is,
Input impedance,
Im
1
z = j L+R
j C
=0
=
Re R
z = j L+
1
1 + j RC
o =
LC 0.1 H
17. (a)
Z 1F 1
+ I +
V 0° R 1 1 j
z = j 0.1 + ×
–
V yx
– 1+ j 1 j
1 j
x y = j 0.1 + 2
+ 1+
V 0° C
1
– = + j × 0.1
1+ 2 1+ 2
O At resonance, imaginary part must be zero,
VYX + IR – V = 0 = 3 rad/sec
VYX = V – IR
19. (c)
2V
VYX = V R L1
R jXC q1 =
R1
V ( R + jXC ) q 1 R1
= L1 =
( R jXC )
96 Electronics Engineering Network Theory
q 2 R2 XC XL
Similarly, L2 = or, tan(–31°) =
L1 + L2 R
or, XL – XC = R tan(–31°)
(L1 + L2 )
Q= R1 + R2 = 50 X – 0.6 = –30
R1 + R2
XL XC = –30 ...(iii)
1 1
q1 R1 + q2 R2
= (at 1 = 1 k-rad/sec)
R1 + R2
Also at, w2 = 2 k-rad/sec
20. (b) 1
XL = XC or 2L =
2
2C
2
Given:
At, 1 = 1 k-rad/sec 1
or, L= 2 ...(iv)
V1 = 100 0° V, 2C
I1 = 0.03 31° A From equation (iii),
At, 2 = 2 k-rad/sec 1
V2 = 100 0° V 1L = –30
1C
I2 = 2 0° A
1 1
R L C or, 1 2 = –30 (Using (iv)
2C 1C
1 × 10 3 1
I or, 6
= –30
4 × 10 C 10 3 C
10 3 10 3
or, = –30
V 4C C
At 2 = 2 k-rad/sec, voltage and current are in 3 3
phase. or, × 10 = –30
4C
Thus, it is case of series resonance,
3 × 10 3
XL or, C=
= XC 4 × 30
2 2
or, C = 25 × 10–6 F = 25 µF
V 100 0°
Z = R= 2 = = 50 Substituting the value of C in equation (iv), we
I2 2 0°
get,
Resistance of circuit,
1 1
R = 50 L= 2
= 3 2 6
2C (2 × 10 ) × 25 × 10
Now at, 1 = 1 k-rad/sec
1
V1 100 0° = = 10 mH
Z= = 100
I 1 0.03 31°
Therefore, values are
100 R = 50 , L = 10 mH, C = 25 µF
= 31° ...(i)
0.03
21. (b)
1 XL XC
Also, Z = Z tan ...(ii) L
R
(at 1 = 1 k-rad/sec)
Comparing equations (i) and (ii), we have
1 XL XC
–31° = tan
R C
GATE Previous Years Solved Paper 97
1
=
L /C j L R1 Xc2
Z= j L = Rea of Zeq =
j C j L+ 1 1 2
LC R12 + Xc2
j C
100 × 100 × 100
For, 1 > 2LC, Z = +ve = = 50
2LC, 100 2 + 100 2
For, 1 < Z = –ve
25. (b)
Z
Inductive s I (s )
f +
5/s V(s ) 1/s
–
Capactive
5 /s 5
I(s) = =
22. Sol. 1 s2 + 1
s+
s
The resonance frequency for the circuit is
i(t) = 5 sint
1 RL2 L /C t
= 1 t
0 LC RC2 L /C v(t) = i dt = 5sin t dt
C 0
Since, (RL = RC = R) 0
So the circuit will have zero real part of v(t) = 5[ cos t ]t0 = 5[ cos t + 1]
admittance.
v(t) = 5 – 5 cost
L 0.02
When, R= = = 14.14 i
C 100 µF
t = T/4
5
23. Sol.
t = T/2
Using star to delta conversion, t=0
v
t=T 5 10
C
L L L C/3 L –5
3T/4
C/3
C C C/3
L L
t i(t ) v(t )
Line current will be zero when the parallel pair 0 0 0
of induction-capacitor is resonant at f = 50 Hz. T
5 5
1 4
So, 50 × 2 = T
LC /3 0 10
2
1 3T
100 = 5 5
LC /3 4
C will be 3.03 mF. T 0 0
24. Sol.
At resonance imaginary part of Zeq = 0
98 Electronics Engineering Network Theory
Answers
EE Network Theorem (Section-B)
9. (b) 10. (b) 11. (d) 12. (a) 13. (a) 14. (a) 15. (c) 16. (c)
17. (a) 18. (c) 19. (1) 20. (a) 21. (3.36) 22. (10) 23. (0.545) 24. (3.025)
25. (d) 26. (a) 27. (3) 28. (0) 29. (14) 30. (a)
Solutions
EE Network Theorem (Section-B)
B 100 0° Z2
6. (d) 10
Rth = 10 10 = 5
Zth Vth = open-circuit voltage at the terminals P-Q.
10
P
+
Zth is calculated by short-circuiting the voltage
20 4V 10 Vth
sources,
6 j8 6 j8 4
Vth =× 10 = 2 V
10 + 10
Thevenin’s equivalent circuit,
110 0° Vth 90 0°
Vth = 5
P
Vth = 2 V
Vth 110 0° Vth 90 0°
+ =0
6 + j8 6 + j8
Q
Vth = 100 0° V
3 j4 8. (d)
To calculate Thevenin’s impedance, current-
Zth source is open-circuited,
Vth = 110 0° I RL x
R=1
Zth
For the maximum power transfer, ZL = 2j
2 2
RL = Rth + X th = 32 + 4 2 = 5 Z C = –j
Vth 100 y
I= =
(3 + j 4) + RL 8 + j 4 Zth = R + ZL + ZC
= 11.18 –26.56° A = 1 + 2j – j
Power absorbed by RL(max) = 1+j
= I2RL = 11.182 × 5 = 625 W Open-circuited voltage at terminals X-Y
= I × Zth
7. (a) = 1 0 × (1 + j)
To calculate Rth, (seen at terminals P-Q), voltage = 2 45° Volt
source is short-circuit.
100 Electronics Engineering Network Theory
14. (a)
j4
2 R VL1 = 100 53.13°
3 + j4
+ + = 80 90° V
10 V –j1 3V
– – Vth = 10 VL1 = 800 90° V
Circuit A Circuit B
GATE Previous Years Solved Paper 101
sin t 1 2.5
We have, =
Vth 2 5 IN
2.5 V
1
x
2.5
sin( t)
Now from the circuit, we get
5
y IN = =1A
1:2 5
or, Vth = 2 sin( t) ...(Thevenin voltage)
20. (a)
Also, Thevenin’s impedance seen from the
Let us apply superposition theorem.
x and y terminals = voltage referred to secondary
Considering the voltage source 20 sin10t alone:
side.
Then, 10 sin5t remain open-circuited.
Zth = Rth = (2)2 × 1
=4 1
...(Thevenin’s impedance)
So, Vth = 2 sin( t)
and Zth = Rth = 4 1
20 sin10t VC1 (t ) = j 0.1
j 10 × 1
18. (c)
The situation of problem is shown in figure:
Zs = Rs ± jX
Let, VC1 (t ) be the voltage across capacitor.
j 0.1
VC1 (t ) = × 20 sin 10t
V RL 1 j 0.1
= (1.99 –84.28°) sin10t
VC1 (t ) = 2 sin(10t – 84.28°) ...(i)
For the transfer of maximum power from source
to load, Considering the current source 10 sin5t alone:
Then, 20 sin10t voltage source remain short-
RL = Rs2 + X 2 = Z
circuited.
Hence, option (c) is correct.
VC2(t) 1H
19. Sol.
Using source transformation theorem,
1 –j0.2 10 sin5t
2.5 V
2.5
5 IN
20 i 10
1 V i1 5 = A (1.25) × (1.25)
–+ A 4
i
12.5
+ 5
2V 1 2 4
– A= = 1.5
1.25
i2
From condition (iii),
B
2 – 1(i1 + i) – i = 0 10
3 = 1.5(2 I ) ×I
2 – i1 – 2i = 0 4
2i + i1 = 2 ...(i) = 3I + 2.5I = 5.5 I
I = 0.545 A
V 2 V V ( 20i )
+ + =0
1 1 2 24. Sol.
2(V – 2) + 2V + V + 20i =0
To get Rth and Vth, consider the following steps.
4V + 4 + V + 20i =0
Case-1: For Rth
5V + 20i =4
3
V
where, =i
1
25i = 2
4
i= A 5 5
25
4
i1 = 2 2 × = 1.68 A
25 5× 5
VAB = 1.68 × 2 = 3.36 V Rth = = 2.5
5+5
GATE Previous Years Solved Paper 103
1
Zload = = 0.5
5 10 V 1 + 2C 2
Vth Putting, = 100 rad/sec.
we get, C = 10 mF
5V 5
26. (a)
Consider the following circuit,
Applying KCL at node, 10 10
Vth 5 Vth + 16
+ =0
5 5 a
6A 5 10 16 V
2Vth = –11
b
Vth = –5.5 V
Maximum power transferred,
2
After rearrangement we get,
Vth
Pmax = = 3.025 W 15 5
4RL
25. (d) +
30 V V ab 8V
Rs = 0.5 –
1
1×
Cs + Ls = 1 + Ls RA RB
Zload = 1
1+ 1 + Cs
Cs RC
(1 Cs )
= + Ls 4 2
1 C 2 s2
2
Put s = j ;
1 j C
Zload = +j L
1 + C2 2
where, RA = 1
1 C RB = 1
= +j L
1 + C2 2
(1 + C 2 2
) 1
RC =
2
104 Electronics Engineering Network Theory
4V 3 5A Vth
3
–
From the circuit diagram we get,
Vth 4
V =5
Z 21 = 2 =3 2
I1
Vth = 14 V
I
R
20
VI = K
0V
10 V
By Millman’s theorem,
0 4A
200 160 100 80
+
50 40 25 20 = 0 V Maximum power transistor of VI product is
E= 1 1 1 1
+ + + maximum. If draw the curve, it intersect (10, 4)
50 40 25 20 that will give maximum power. The terminal
1 1 1 1 1 voltage is 10 V (Load voltage) and current is 4 A
= + + +
R 50 40 25 20 (Load current).
Simplified circuit,
10
I = 0A Load resistance is = 2.5 .
4
4 Transient Analysis
R2
Q.1 A 10 resistor, a 1 H inductor and 1 µF capacitor (d) et / R1C1 u(t )
R1 + R2
are connected in parallel. The combination is
driven by a unit step current. Under the steady- [EC-1992 : 2 Marks]
state condition, the source current flows
Q.4 A ramp voltage, v(t) = 100t Volts, is applied to
through
an RC differentiating circuit with R = 5 k and
(a) the resistor C = 4 µF. The maximum output voltage is
(b) the inductor (a) 0.2 Volt (b) 2.0 Volts
(c) the capacitor only (c) 10.0 Volts (d) 50.0 Volts
(d) all the three elements [EC-1994 : 1 Mark]
[EC-1989 : 2 Marks]
Q.5 The rms value of a rectangular wave of period
Q.2 If the Laplace transform of the voltage across a T, having a value of +V for duration, T1 (<T)
capacitor of value of 1/2 F is and –V for the duration, T – T1 = T2 equals
s+1 T1 T2
Vc ( s ) = 3 2
(a) V (b) V
s +s +s+1 T
The value of the current through the capacitor V T1
(c) (d) V
at t = 0+ is, 2 T2
(a) 0 A (b) 2 A [EC-1995 : 1 Mark]
1
(c) A (d) 1 A Q.6 The voltage VC , VC and VC3 across the
2 1 2
[EC-1989 : 2 Marks] capacitors in the circuit in figure, under steady-
state, are respectively
Q.3 For the compensated attenuator of figure, the
impulse response under the condition 10 k 1H 2F 2H 25 k
R1C1 = R2C2 is + –
VC 2
R1 + + +
100 V VC 1 1F 40 k VC3 3F
– – –
+ +
C1
v1(t) C2 R2 v2(t)
(a) 80 V, 32 V, 48 V (b) 80 V, 48 V, 32 V
– –
(c) 20 V, 8 V, 12 V (d) 20 V, 12 V, 8 V
R2 [EC-1996 : 2 Marks]
(a) [1 e1/ R1C1 ] u(t )
R1 + R2 Q.7 In the circuit of figure the energy absorbed by
R2 the 4 resistor in the time interval (0, ) is
(b) (t )
R1 + R2
106 Electronics Engineering Network Theory
1
S C i(t)
0.5
2
i1(t) i2(t) R
V (a) 0.31
L
R
C 2 t(sec)
i(t)
V V
(a) (b) 1
2R R
V
(c) (d) zero (b) 0.63
4R
[EC-2003 : 2 Marks]
1/2 t(sec)
GATE Previous Years Solved Paper 107
1
–
(d) 1 mV
0.63
+
2 t(sec)
(a) 0.5 A (b) 2.0 A
[EC-2004 : 1 Mark] (c) 1.0 A (d) 0.0 A
Q.12 The circuit shown in the figure has initial [EC-2006 : 1 Mark]
current iL(0–) = 1 A through the inductor and an Q.15 In the figure shown below, assume that all the
initial voltage vC(0–) = –1 V across the capacitor. capacitors are initially uncharged. If
For input v(t) = u(t), the Laplace transform of the vi(t) = 10 u(t) Volts, vo(t) is given by
current i(t) for t 0 is
1k
1 1H
+ + +
i (t )
+
v(t ) 1F 4 µF
– vi(t ) 4k 1 µF v o (t )
–
– –
s s+2
(a) (b) (a) 8e–t/0.004 Volts (b) 8(1 – e–t/0.004) Volts
s2 + s + 1 s2 + s + 1
s 2 s 2 (c) 8 u(t) Volts (d) 8 Volts
(c) (d) [EC-2006 : 1 Mark]
s2 + s 1 s2 + s + 1
[EC-2004 : 2 Marks] Q.16 In the circuit shown, Vc is 0 Volts at t = 0 sec. For
Q.13 A square pulse of 3 Volts amplitude is applied t < 0, the capacitor ic(t), where ‘t’ is (in seconds),
to C-R circuit shown in the figure. The capacitor is given by
is initially uncharged. The output voltage V2 at 20 k ic
time t = 2 sec is
Vi 0.1 µF +
10 V 20 k VC 4 µF
3V + + –
V1 1k V2
(a) 0.50 exp(–25t) mA
– –
t (b) 0.25 exp(–25t) mA
2 sec
(c) 0.50 exp(–12.5t) mA
(a) 3 V (b) –3 V
(d) 0.25 exp(–6.25t) mA
(c) 4 V (d) –4 V
[EC-2007 : 2 Marks]
[EC-2005 : 2 Marks]
108 Electronics Engineering Network Theory
Rs I s
(a) 0 (b)
L
(t ) 1F Vc(t)
( R + Rs )I s
(c) (d)
L
[EC-2008 : 1 Mark]
Q.18 The circuit shown in the figure is used to charge Q.19 For t > 0, the output voltage Vc(t) is
the capacitor C alternately from two current
2 1 /2 t 3 /2 t
sources as indicated. The switches S1 and S2 (a) (e e )
3
are mechanically coupled and connected as
follows: 2 1 /2 t
(b) te
For 2nT t < (2n + 1) T, (n = 0, 1, 2,....) S1 to P1 and 3
S2 to P2. 2 3
1/2 t
For (2n + 1) T t < (2n + 2) T, (n = 0, 1, 2,....) (c) e cos t
3 2
S1 to Q1 and S2 to Q2.
2 1/2 t 3
Q1 P1 Q2 P2 (d) e sin t
3 2
+
S1 S2
[EC-2008 : 2 Marks]
+
1 0.5 1F C Vc(t) 1 1 Q.20 For t > 0, the voltage across the resistor is
–
1 3 /2 t 1 /2 t
– (a) (e e )
1A 1A 3
1/2 t 3t 1 3t
Assume that the capacitor has zero initial (b) e cos sin
2 3 2
charge. Given that u(t) is a unit step function,
the voltage Vc(t) across the capacitor is given by
2 1/2 t 3t
(c) e sin
3 2
(a) ( 1)n tu (t nT )
n=0
2 1/2 t 3t
(d) e cos
3 2
(b) u(t ) + 2 ( 1)n u (t nT )
n=1 [EC-2008 : 2 Marks]
GATE Previous Years Solved Paper 109
Q.21 The switch in the circuit shown was on a Q.24 In the circuit shown below, the initial charge on
position a for a long time, and is moved to the capacitor is 2.5 mC, with the voltage polarity
position ‘b’ at time t = 0. The current i(t) for t > 0 as indicated. The switch is closed at time t = 0.
is given by The current i(t) at a time ‘t’ after the switch is
10 k closed is
a b
i (t )
i (t )
10
100 V 0.2 µF 5k
100 V
–
0.5 µF 0.3 µF 50 µF
+
i( t )
[EC-2014 : 2 Marks]
5k 4k 1k t=0
i 0.1 µF
10 V 10 µF t=0 1 mH
(a) 0.3 (b) 0.45
(c) 0.9 (d) 3
[EC-2015 : 1 Mark]
[EC-2014 : 1 Mark]
Q.32 In the circuit shown, switch SW is closed at t = 0.
Q.29 In the figure shown, the capacitor is initially
Assuming zero initial conditions, the value of
uncharged. Which one of the following
vc(t) (in Volts) at t = 1 sec is ______ .
expressions describes the current I(t) (in mA)
t=0
for t > 0? 3
R1 S
5 +
1k I 10 V 2 F vc(t)
6 –
5V R2 2k C 1 µF
[EC-2015 : 2 Marks]
10 V 2 + 2 5A
12 V
2F 3
0.1 F VC
–
[EC-2016 : 2 Marks]
If time ‘t’ is in seconds, the capacitor voltage VC
Q.37 In the circuit shown, the voltage VIN(t) is
(in Volts) for t > 0 is given by
described by
t
(a) 4 1 exp 0, for t < 0
0.5 VIN (t ) =
15 Volts, for t 0
t
(b) 10 6 exp where ‘t’ is in seconds. The time (in seconds) at
0.5
which the current I in the circuit will reach the
t value 2 Ampere is _____ .
(c) 4 1 exp
0.6 1 I
t +
(d) 10 6 exp
0.6
VIN(t ) 1H 2H
[EC-2016 : 1 Mark]
– t=0
10 A 5
10 V 1 mH 10 µF VC
+
2.5 H
The steady-state magnitude of the capacitor The current i(t) (in Ampere) at t = 0.5 seconds is
voltage VC (in Volts), is ______ . ______ .
[EC-2016 : 2 Marks] [EC-2017 : 2 Marks]
Q.36 Assume that the circuit in the figure has reached Q.39 For the circuit given in the figure, the magnitude
the steady-state before time t = 0 when the 3 of the loop current (in amperes, correct to three
resistor suddenly burns out, resulting in an decimal places) 0.5 seconds after closing the
open-circuit. The current i(t) (in Amperes) at t = 0+ switch is _____ .
is _____ .
112 Electronics Engineering Network Theory
1V 1 P t=0
– +
1 1H 20 V 20 k
[EC-2018 : 2 Marks]
dv(t )
The value of at t = 0+ is
Q.40 The RC circuit shown below has a variable dt
resistance R(t) given by the following expression: (a) –5 V/s (b) 3 V/s
t (c) –3 V/s (d) 0 V/s
R(t ) = R0 t for 0 t < T
T [EC-2021 : 2 Marks]
where R0 = 1 , and C = 1 F. We are also given
Q.43 The circuit in the figure contains a current
that T = 3 R0C and the source voltage is Vs = 1 V.
source driving a load having an inductor and a
If the current at time t = 0 is 1 A. Then the current
resistor in series, with a shunt capacitor across
I(t), in amperes, at time t = T/2 is ____ .
the load. The ammeter is assumed to have zero
(Rounded off to 2 decimal places).
resistance. The switch is closed at time, t = 0.
I( t) R(t )
Ammeter
S
A Load
Vs Current 10 mH
C
source
t=0 1A Shunt 100 pF
capacitor
5k
[EC-2019 : 2 Marks]
5V 250 Vc(t) 0.6 µF ammeter reading that one will observe after the
VR/500 switch is closed (Rounded off to two decimal
places) is _______ A.
The time after which the voltage across the [EC-2021 : 2 Marks]
capacitor becomes zero (Rounded off to three
decimal places) is ______ ms. ELECTRICAL EN GINEERIN G
[EC-2021 : 2 Marks] (GATE Previous Years Solved Papers)
Q.42 The switch in the circuit in the figure is in Q.1 The time constant of the network shown in figure
position ‘P’ for a long time and then moved to is
position ‘Q’ at time t = 0.
GATE Previous Years Solved Paper 113
R (a) 3 µ-sec
(b) 12 µ-sec
(c) 32 µ-sec
10 V 2R C
(d) unknown, unless the actual network is
specified
[EE-1996 : 1 Mark]
(a) 2 RC (b) 3 RC
2 RC Q.4 An ideal voltage source will charge an ideal
RC
(c) (d) capacitor
2 3
[EE-1992 : 1 Mark] (a) in infinite time (b) exponentially
(c) instantaneously (d) none of these
Q.2 In the series RC circuit shown in figure the
[EE-1997 : 1 Mark]
voltage across C starts increasing when the dc
source is switched ON. The rate of increase of Q.5 In the circuit shown in figure, it is desired to
voltage across C at the instant just after the have a constant direct current i(t) through the
switch is closed (i.e. at t = 0+) will be ideal inductor L. The nature of the voltage source
C R
v(t) must be
+ –
Vc i(t)
I V(t ) L
1V
Q.3 The v-i characteristic as seen from the terminal Q.6 A rectangular voltage pulse of magnitude V and
pair (A, B) of the network of Fig. (1) is shown in duration T is applied to a series combination of
Fig. (2). If an inductance of value 6 mH is resistance R and capacitance C. The maximum
connected across the terminal - pair (A, B), the voltage developed across the capacitor is
time constant of the system will be
T
i A (a) V 1 exp
Network of + RC
linear resistors V VT
and independent (b)
sources – RC
B (c) V
Fig. (1)
T
i (d) V exp [EE-1999 : 2 Marks]
RC
4 mA
Q.7 A voltage waveform v(t) = 12t2 is applied across
a 1 H inductor for t 0, with initial current
through it being zero. The current through the
(0, 0)
v inductor for t 0 is given by
Fig. (2) 8V
114 Electronics Engineering Network Theory
(a) 12 t (b) 24 t
S
3
(c) 12 t3 (d) 4 t3
[EE-2000 : 1 Mark] t=0 4F
Q.8 A unit step voltage is applied at t = 0 to a series 10 V 4 4H
RL circuit with zero initial conditions. 4
(a) It is possible for the current to be oscillatory.
(b) The voltage across the resistor at t = 0+ is
zero. (a) 2 V (b) 4 V
(c) The energy stored in inductor in the steady- (c) –6 V (d) 8 V
state is zero. [EE-2003 : 2 Marks]
(d) The resistor current eventually falls to zero.
Q.12 In figure, the capacitor initially has a charge of
[EE-2000 : 1 Mark]
10 Coulomb. The current in the circuit one
Q.9 Consider the circuit shown in figure. If the second after the switch ‘S’ is closed will be
frequency of the source is 50 Hz, then the value
t=0
of t0 which results in a transient free response is 2
5 0.01 H S
+
t = t0 100 V 0.5 F
–
sin( t)
20 V 10 µF 10
11 V
10 k 11 nF
0
10 µs
(a) 20 V (b) 10 V
(a) 11 V (b) 5.5 V (c) 5 V (d) 0 V
(c) 6.32 V (d) 0.96 V [EE-2005 : 1 Mark]
[EE-2002 : 2 Marks] Q.14 The circuit shown in the figure is steady-state,
Q.11 In the circuit shown in figure, the switch ‘S’ is when the switch is closed at t = 0. Assuming
closed at time (t = 0). The voltage across the that the inductance is ideal, the current through
inductor at t = 0+, is the inductor at t = 0+ equals.
GATE Previous Years Solved Paper 115
[EE-2005 : 2 Marks] C2 V
I L2 R3
Statement for Linked Answer Questions (15 and 16):
A coil of inductance 10 H and resistance 40 is
connected as shown in the figure. After the switch ‘S’ (a) 1 and 4 (b) 5 and 1
has been in contact with point 1 for a very long time, it (c) 5 and 2 (d) 5 and 4
is moved to point 2 at, t = 0. [EE-2006 : 2 Marks]
Q.15 If at t = 0+, the voltage across the coil is 120 V, Q.19 In the figure, transformer T1 has two secondaries,
the value of resistance R is all three windings having the same number of
1 20 turns and with polarities as indicated. One
secondary is shorted by a 10 resistor R, and
S 2
10 H the other by a 15 mF capacitor. The switch SW is
120 V opened (t = 0) when the capacitor is charged to
R
40 5 V with the left plate as positive. At (t = 0+) the
voltage VP and current IR are
(a) 0 (b) 20 S IR
(c) 40 (d) 60 T1 R
[EE-2005 : 2 Marks]
+
Q.16 For the value of resistance obtained in (a), the 25 V VP C
– + –
like taken for 95% of the stored energy to be
dissipated is close to
(a) 0.10 sec (b) 0.15 sec
(a) –25 V, 0.0 A
(c) 0.50 sec (d) 1.0 sec
(b) very large voltage, very large current
[EE-2005 : 2 Marks]
(c) 5.0 V, 0.5 A
Q.17 An ideal capacitor is charged to a voltage Vo (d) –5.0 V, –0.5 A
and connected at t = 0 across an ideal inductor [EE-2007 : 2 Marks]
L. (The circuit now consists of a capacitor and
Q.20 In the circuit shown in figure. Switch SW1 is
1 initially closed and SW2 is open. The inductor
inductor alone). If we let o = , the voltage
LC L carries a current of 10 A and the capacitor
across the capacitor at time t > 0 is given by charged to 10 V with polarities as indicated.
(a) Vo (b) Vo cos( ot) SW2 is closed at t = 0 and SW1 is opened at t = 0.
The current through C and the voltage across L
(c) Vo sin( ot) (d) Vo e ot cos( ot ) at (t = 0+) is
[EE-2006 : 2 Marks]
116 Electronics Engineering Network Theory
3A 3V C1 1F C2 2F
1F 1F 3
1 1 (a) 1 V (b) 2 V
(a) sec (b) sec
9 4 (c) 1.5 V (d) 3 V
(c) 4 sec (d) 9 sec [EE-2009 : 2 Marks]
[EE-2008 : 2 Marks]
Q.25 The switch in the circuit has been closed for a
Statement for Linked Answer Questions (22 and 23): long time. It is opened at t = 0. At t = 0+, the
The current i(t) sketched in the figure flows through a current through the 1 µF capacitor is
initially uncharged 0.3 nF capacitor.
1 S
Q.22 The charge stored in the capacitor at t = 5 µs,
t=0
will be
5V 1 µF 4
6
5
4
i(t) mA
(a) 0 A (b) 1 A
3
(c) 1.25 A (d) 5 A
2
[EE-2010 : 1 Mark]
1
[EE-2008 : 2 Marks] i
–
Q.23 The capacitor charged upto 5 µs, as per the C 100 V
t=0
current profile given in the figure, is connected +
across an inductor of 0.6 mH. Then the value of
voltage across the capacitor after 1 µs will
approximately be
GATE Previous Years Solved Paper 117
S
Vs
t=0
(d)
C1 i(t) C2 t
[EE-2014 : 1 Mark]
(a) zero Q.29 The switch SW shown in the circuit is kept at
(b) a step function position ‘1’ for a long duration. At t = 0+, the
(c) an exponentially decaying function switch is moved to position ‘2’. Assuming
(d) an impulse function
V02 > V01 , the voltage V c (t) across the
[EE-2012 : 1 Mark]
capacitor is
Q.28 A combination of 1 µF capacitor with an initial
R ‘2’
voltage Vc(0) = –2 V in series with a 100 SW
resistor is connected to a 20 mA ideal dc current
‘1’ R
source by operating both switches at t = 0 is as
V02
shown in the figure. Which of the following V01
graphs shown in the options approximates the C Vc
d2 I
t=0 initial conditions, the value of at t = 0+ is
dt 2
118 Electronics Engineering Network Theory
R 6 8
V 50 V 8 32 2H
32
L
S1 1F
1 S2
5 5
5
2 10 V
3V 1H
5 5
3V
[EE-2016 : 2 Marks]
[EE-2017 : 1 Mark]
Q.32 In the circuit shown below, the initial capacitor
voltage is 4 V. Switch S1 is closed at t = 0. The Q.35 A resistor and a capacitor are connected in series
charge (in µC) lost by the capacitor from t = 25 µs to a 10 V d.c. supply through a switch. The
to t = 100 µs is _______ . switch is closed at t = 0, and the capacitor
voltage is found to cross 0 V at t = 0.4 , where
S1 is the circuit time constant. The absolute value
of percentage change required in the initial
capacitor voltage if the zero crossing has to
4V 5 µF 5
happen at t = 0.2 is _______ .
(Rounded off 2 decimal places).
[EE-2020 : 2 Marks]
[EE-2016 : 2 Marks]
Answers
EC Transient Analysis
9. (a) 10. (c) 11. (c) 12. (b) 13. (b) 14. (a) 15. (c) 16. (a)
17. (b) 18. (c) 19. (d) 20. (b) 21. (b) 22. (a) 23. (a) 24. (a)
25. (d) 26. (c) 27. (10) 28. (1.25) 29. (a) 30. (31.25) 31. (c) 32. (2.528)
33. (1.5) 34. (d) 35. (100) 36. (–1) 37. (0.3405) 38. (8.16) 39. (0.316) 40. (0.25)
41. (0.1386) 42. (c) 43. (1.44)
Solutions
EC Transient Analysis
1. (b) 3. (b)
At steady state:
1
Inductor behave as short-circuit. R2 ×
C2 s R2
So, under steady state condition the source Z2(s) = =
1 R2 2s + 1
C
current flows through the inductor. R2 ×
C1s
2. (c)
1
1 2 R1 ×
ZC(s) = = C1s R1
Cs s Z1(s) = =
1 R1 1s + 1
C
R1 ×
VC (s ) s(s + 1) C1s
IC(s) = =
ZC (s ) 2(s + s 2 + s + 1)
3
V2 (s) Z2 (s )
s(s + 1) =
= V1 (s) Z1 (s) + Z2 (s )
2(s 2 + 1) ( s + 1)
R1C 1 = R2C 2
s
IC(s) = R2
2(s 2 + 1) V2 (s) R2C 2 s + 1 R2
= =
V1 (s) R1 R2 R1 + R2
s2 +
i(0+) = lim sIC (s) = lim R2 C 2 s + 1 R2 C 2 s + 1
s s 2(s 2 + 1)
R2
1 1 V2(s) = V1 (s)
= = Ampere R1 + R2
2+0 2
120 Electronics Engineering Network Theory
+ 20
+ +
–
100 V VC1 40 k V C3 3F Vx +
– – –
iL(0–) = 2.5 A
GATE Previous Years Solved Paper 121
0.5
0.31
–i1R – V – i1R = 0
V t
i1 = 0 1/2
2R
Graph (c) satisfies all conditions.
10. (c)
When switch is in position 2, 12. (b)
KVL :
1/sC
Ldi(t ) 1
v(t) = Ri(t ) + + i(t ) dt
V/s I1(s) I2(s ) + dt C
R 0
–
– Taking Laplace transform on both sides,
R sL
I ( s ) Vc (0 + )
+ V(s) = RI(s) + LsI (s) LI(0 + ) + +
1 2 1/sC sC s
1 I (s) 1
= I (s ) + sI (s ) 1 +
s s s
122 Electronics Engineering Network Theory
1k 2T
= t
3 T
4 × 10 s + 1
–1
1
R2 ×
C2 s In mathematical form,
Z2 = 1
R2 × 0 < t < T,
C2 s
C = 1 F, I = 1 A
R2 4k t
= = Vc = dt = t
R2C 2 s + 1 4 × 10 3 s + 1
0
Z2 At t = T, Vc = T
Vo(t) = Vi (t )
Z1 + Z2 t
T < t < 2T, Vc = T dt = 2T t
Z 2 = 4Z 1
0
Z2 4Z1 4Z At t = 2T, Vc = 0
= = 1 = 0.8
Z1 + Z2 Z1 + 4Z1 5Z1
t
vo(t) = 0.8 vi(t) = 0.8 × 10 u(t) 2T < t < 3T, Vc = dt = t 2 T
vo(t) = 8 u(t) 2T
GATE Previous Years Solved Paper 123
At t = 3T, Vc = T t>0
3T < t < 4T,
I(s)
t
Vc = T dt = 4T t 1/sC
R=5k
3T +
+
v(0 ) 100
Vc(t) = tu(t) – 2(t – T) u(t – 2T) =
s s
–
+ 2(t – 2T) u(t – 2T) ...
C = 0.16 µF
= t u(t ) + 2 ( 1)n (t nT ) u(t nT )
n=1 v(0 + ) t / RC
i(t) = e u(t )
R
19. (d)
v(0+) = 100 V
1 1 1 1 1
Vc(s) = = 2 =
1 s s +s+1 RC 3 6
s+1+ 5 × 10 × 0.16 × 10
s
R = 5k
1 i(t) = 20 e–1250t u(t) mA
= 2
2
1 3
s+ + 23. (a)
2 2
0.75
2 t /2 3 = 0.375 A
i(0+) =
Vc(t) = e sin t 2
3 2
i( ) = 0.5 A
i(t) = i( ) – {i( ) – i(0+)} e–Rt/L
20. (b)
where, R = equivalent resistance seen across L
1 s with current source opened,
VR(s) = 1= 2
1 s +s+1
s+1+ 10
s
1 1 3 2
s+
2 2 2 3
= 2 2 2 2 10 10 R
1 3 1 3
s+ + s+ +
2 2 2 2
t /2 3 1 t /2 3
VR(t) = e cos t e sin t R = 10 + (10 10) = 15
2 3 2
3
i(t) = 0.5 {0.5 0.375} e 15t /15 × 10
t /2 3 1 3
VR(t) = e cos t sin t
= 0.5 – 0.125 e–1000t A
2 3 2
24. (a)
21. (b)
Q
V(0–) = V (0+ ) =
–
t=0
+
C
+ 0.2 µF 2.5 × 10 3
– = = 50 V
= 0.16 µF
100 V = v(0 )
100 V
+ 50 × 10 6
– = v(0 )
0.3 µF
2
2
10 or, C=
R
100 V
2
+ 2
V( ) = 100 V L= × 4 = 10 mF
– 40
5ix 2 ix
10 + + ix = 0
5 +
8ix 10 V 2 vc( )
or, = 10 –
5
50
ix = A
8
2
vo(t) = 5ix(t) vc( ) = × 10 = 4 V
2+3
5 × 50
= = 31.25 V [By voltage divider]
8
vc(t) = 4[1 – e–t/ ]
31. (c) 3× 2 5
= ReqC = × = 1 sec.
vc (0–)
= 0V 3+2 6
vc(0+) = 0 V vc(1) = 4[1 – e–1/1] = 2.528 Volts
vc( ) = 3 V
126 Electronics Engineering Network Theory
3 –3
10 × 10
–
+ I (s) 106
Vc(s)
10s +
–3
– 10 s
10 V 2 Vc(0 )
3
– 10 × 10
I(s) =
106
10 3 s +
10 × 2 10s
where, Vc(0–) = =4V ...(i)
2+3 106
Vc(s) = I (s ) ×
Vc(0–) = Vc (0+) = 4 V 10 s
At t = ,
10 6
Vc(s) =
4 2 s 2 + 10 8
Taking inverse Laplace, we get,
+ Vc(t) = 100 sin104 t V
Vc( ) 2 5A Steady state magnitude voltage across
–
capacitor is 100 V.
36. Sol.
Vc( ) = 5 × 2 = 10 V ...(ii) At t = 0–;
The time constant of the circuit is,
+
4 2 V 3F 2
1 –
+
2
i(0 )
2 +
12 V V 2F –
3
GATE Previous Years Solved Paper 127
12
I= =2A
6 5
2 10 A 5
V3F = 10 × =4V
5 –
iL(0 ) = 5 A
3
V2F = 10 × =6V
5
iL(0–) = iL(0+) = 5 A
At t = 0+;
• The Laplace transform model of the circuit
for t > 0 is as follows:
4V 2
1
2
+
i(0 ) 5
10 I(s)
12 V 6V A 5 2.5 s
O.C. s
–
LiL(0 ) = 12.5 A
4
i(0+) = = 1A
2+2
10 12.5 10 5
Note: As the current direction is not mentioned I(s) = =
s 5 + 2.5s s s+2
in the question, thus by reversing the current
• By taking inverse Laplace transform,
direction 1 A can also be the answer.
i(t) = (10 – 5e–2t) u(t) A
37. Sol. • At t = 0.5 seconds,
Rt
V 5
is(t) = 1 e L i(t) = 10 A = 8.16 A
R e
3t 39. Sol.
15 2
is(t) = 1 e A Loop current,
1
1
i(t) = (1 e t / ) A ; t > 0
Current through 2 H, 1+1
1 L 1 1
i(t) = is (t ) = = = sec.
1+ 2 Req 1 + 1 2
3t
1
i(t) = 5 1 e 2 A i(t) = (1 e 2t ) A ; t > 0
2
At t = 0.5 sec,
At i(t) = 2 A,
1
3t i(t) = (1 e 1 ) A = 0.316 A
2
2 = 5 1 e 2
40. Sol.
By solving, t = 0.3405 sec. T = 3R0C = 3 sec.
38. Sol. t
R(t) = 1 ; 0 t 3 sec
3
• The equivalent circuit at t = 0– is as follows:
128 Electronics Engineering Network Theory
i(t) R(t)
250 Vc( )
+ V – +
R
1V C 5V 250 Vc( )
VR/500
–
1 By KCL at Vc( ),
R(t ) i(t ) + i(t ) dt = 1
C Vc ( ) 5 VR Vc ( )
+ + =0
t 250 500 250
1 i(t ) + i(t ) dt = 1
3 Vc ( ) 5 5 Vc ( ) Vc ( )
+ + =0
Differentiating both sides, we get, 250 500 250
(VR = 5 – Vc( ))
t di i
1 +i = 0
3 dt 3 1 1 1 5 5
Vc ( ) + =
250 500 250 250 500
di
(3 t ) + 2i = 0 Vc( ) [2 – 1 + 2] = 5(2 – 1)
dt
di 2 5
dt Vc( ) = Volts
= 3
i (3 t )
For time constant, = ReqC
Integrating on both sides, we get,
For Req(V S.C)
ln(i) = 2 ln(3 – t) + ln(c)
i(t) = c(3 – t)2 ; t 0 V-I method:
Given that, i(0) = 1 A 250 I
So, c(3 – 0)2 = 1 A + V –
R
+
1 250 V
c= A –
9 VR/500
1
i(t) = (3 t )2 A
9 By KCL at (V),
T VR VR V
At, t= = 1.5 sec I+ = +
2 250 500 250
1 VR VR V
(1.5)2 = 0.25 A I= +
i(t) = 500 250 250
9
V V V
41. (0.1386) I= + R + (V = –VR)
500 250 250
t=0 2 1 3
250 I= V =V
+ V –
500 500 500
R
S
V 500
5V 250 Vc(t) 0.6 µF = = Req
VR/500 I 3
500
= ReqC = × 0.6 µF
Vc(0) = –5 V = Vo 3
For t > 0, S is closed. 50 × 6
= H = 10 4 sec
For final value at t = (S.S), C O.C. 3
Vc(t) = VC( ) + (VC(0) – VC( )) e–t/
GATE Previous Years Solved Paper 129
5 5 10 4 t 5k
= + 5 e 10 V
3 3
5 4 10 k
10 4 t +
Vc(t) = 5 e ic(0 )
3 3
4
5 20 e 10 t 10 V 1 mA
Vc(t) = Volts t 0
3
By KCL at (10 V)
If, Vc(t) = 0
10
4 1 10 4 t + iC (0 + ) + 1 mA = 0
5 = 20 e 10 t =e 5k
4
iC(0+) = –3 mA
1
ln = –104 t
4 dvC (0 + )
C = –3 mA
+1.386 = +104t dt
t = 1.386 × 10–4
dvC (0 + ) 3m 3m
t = 0.1386 × 10–3 = =
dt C 1m
t = 0.1386 msec
dvC (0 + )
42. (c) = –3 V/sec
dt
Given:
43. (1.44)
P t=0
In steady state the circuit is,
Q S
20 V 20 k iL ( ) = 1 A
+
1A V C( )
– 5k
– VC(s)
iL(0 )
sL
20
iL(0–) = = 1 mA = iL (0+ ) = I o 1/s 1/sC
20 k
iL(s ) R
By VDR,
20 × 10 k
VC(0–) =
(5 + 5 + 10) k
10 V = VC(0+) = Vo Nodal equation in s-domain
At t = 0+, ‘S’ is in position (Q) 1 VC ( s ) VC ( s )
+ + =0
L O.C. with Io, C S.C. with Vo s 1/ sC R + sL
130 Electronics Engineering Network Theory
2
1 iL(t) A
n =
LC 1.444
R R C
and 2 n = =
L 2 L 1.0
5 × 10 3 100 × 10 12
=
2 10 × 10 3 0 TP t(sec)
Answers
EE Transient and Steady-State Response
1. (d) 2. (d) 3. (a) 4. (c) 5. (c) 6. (a) 7. (d) 8. (b)
9. (b) 10. (c) 11. (b) 12. (a) 13. (b) 14. (c) 15. (c) 16. (b)
17. (b) 18. (d) 19. (d) 20. (d) 21. (c) 22. (c) 23. (d) 24. (a)
25. (b) 26. (d) 27. (d) 28. (c) 29. (*) 30. (d) 31. (2)
Solutions
EE Transient and Steady-State Response
1. (d) 2
Rnet = R 2R = R
Time constant, = Rnet C 3
Rnet = Net resistance across capacitor when all Hence time constant,
the independent voltage sources are short- 2
= RC sec.
circuited and all independent current sources 3
are open-circuited.
2. (d)
When switch is closed, current through
R
capacitor,
S.C. 2R dV (t )
I= C c
Rnet dt
V = RI + Vc(t)
dV (t )
1 = RC c + Vc (t )
dt
GATE Previous Years Solved Paper 131
Q At t = 0+, Vc(t)
Vc(0+) = 0
t/ RC
dV (t ) V(1 – e )
1 = RC c + 0
dt
dVc (0 + ) 1
Hence, = t
dt RC T
i.e., capacitor charges till t = T and then
3. (a)
discharges.
VOC 8 Hence, Vc(max) = V(1 – e– /RC)
R= = 3
=2k
I SC 4 × 10
7. (d)
L = 6 mH
Current through inductor,
L 6 × 10 3
Time constant, = = = 3 µ sec. 1
t
R 2 × 10 3 i(t) = v(t ) dt
L
4. (c)
t
Q Ideal voltage has zero internal resistance, 1
= 12 t 2 dt for t 0 = 4t3 A
Time constant, 1
0
= RC = 0
Hence capacitor will charge instantaneously. 8. (b)
At t = 0+ inductor works as open-circuit, hence
5. (c) complete source voltage drops across it and
di(t ) i( t) consequently, current through the resistor R is
V= L
dt zero. Hence, voltage across the resistor at t = 0+
Constant direct current
For i(t) = I u(t) I is zero, and further with time it rises according
d to VR(t) = (1 – e–Rt/L) u(t).
V= L I u(t ) t
dt V(t)
= LI (t) viz an ideal impulse function
1
6. (a)
R
+
0 t
+
Vs(t) C Vc(t)
– 9. (b)
– For transient free response,
Given, L
tan( t0) =
R
Vs(t )
2 × 50 × 0.01
tan(2 × 50 × t0) =
V 5
1
t 2 × 50 × t0 = tan
0 T 5
i.e., Vs = V[u(t) – u(t – T)] = 32.14° = 0.561 rad
Q Vc(t) = Vs(t) × (1 – e–t/RC) 0.561
t0 = = 1.786 ms
= V(1 – e–t/RC) × [u(t) – u(t – n)] 100
132 Electronics Engineering Network Theory
10 V 4 4 VL(0 )
+
10
=1A
iL(0–) =
10
After closing the switch, at t = 0+
Current through inductor can not change
10
I= =2A abruptly.
3+4 4
iL(0+) = iL(0–) = 1 A
VL(0+) = I × (4 4) = 2 × 2 = 4 V
15. (c)
= dt
q0 100 C q RC 0 40
100 C – q = (100C – q0) e–t/RC
GATE Previous Years Solved Paper 133
120 1 2
iL(0–) = =2A Remaining Li1 energy in inductor
20 + 40 2
After moving the switch, W1 = 0.05 W0
At t = 0+ = 0.05 × 20 = 1 Joule
Current through inductor can not change 1 2
abruptly. Li1 = 1
2
So, iL(0+) = iL(0–) = 2 A
1
20
× 10 × i12 = 1
2
–
1
2A i1 = = 0.4472 A
5
R VL
Let at t = T, current decrease to i1,
40 0.4472 = 2e –10T
+ T 0.15 sec.
+
VC(0 ) Vo/s
20
I(s) =
(20 + 40 + 40) + 10s
1
20 2 Zc =
= C sC
=
10s + 100 s + 10
1 1 2 10t
i(t) = L [ I (s)] = L = 2e As current though the inductor is zero at t = 0,
s + 10
then
R eff
+ t
or, i(t) = iL (0 ) e L
(20 + 40 + 40)
t
10t
= 2e 10 = 2e L sL
Initial stored energy in inductor
1 2 +
W0 = LiL (0 )
2
1
= × 10 × 2 2 = 20 Joules
2
134 Electronics Engineering Network Theory
Iv 20. (d)
SW2 R2 = 10
S.C. O.C. I1
O.C. V
+
I S.C. R3
R1 = 10 SW1 L 10 A 10 V C
–
GATE Previous Years Solved Paper 135
At (t = 0+), the circuit becomes, Charged stored in the capacitor = Area under
VL 10 i - t curve,
Q = A1 + A2
1
+ = (2 × 10 6 ) × (4 × 10 3 )
10 10 A V 10 V
2
– 1
+ (4 + 2) × 10 3 × (5 2) × 10 6
2
6× 3 9
= 4+ × 10 = 13 nC
2
By KCL,
23. (d)
VL VL 10
10 + =0
10 10 Capacitor charged upto 5 µs, so total charge
2VL = 110 stored in capacitor = Q = 13 nC.
VL = 55 V Voltage across the capacitor before connecting
to inductor,
55 10
IC = = 4.5 A
10 Q 13 × 10 9
V0 = = = 43.33 V
C 0.3 × 10 9
21. (c) Voltage across the capacitor at time t,
For finding time constant, we neglect current Vc(t) at t = 1 µs
source as a open-circuit.
Vc (t ) t = 1 µs = [V0 cos 0t]t = 1 µs
Circuit becomes,
1F 3 1 6
1F 3 × 1 × 10
0t = 3 9
0.6 × 10 × 0.3 × 10
1F 1F 3 2F 3
= 2.357 rad = 135°
Vc (t ) t = 1 µs = 43.33 × cos135°
–30.6 V
Ceq = 2/3 F
24. (a)
6 = Req
At t = 0–, S1 is closed, S2 is open.
22. (c)
C1 gets charged upto 3 V
i(t) mA
Charge stored in C1,
4 Q0 = C1V = 1 × 3 = 3C
Voltage across C2 is zero at t = 0–, so no charge
2 is stored in C2.
A1 A2 At t > 0, S1 is open and S2 is closed.
µs Charge stored (Q 0 ) initially in C 1 gets
2 µs 5 µs
redistributed between C1 and C2.
136 Electronics Engineering Network Theory
IC
Q1 Q2 +
5V 4V 4
C1 V C2 –
–
5V VC(0 ) 4
C 1/ LC
= 100
L 2
1
– s2 +
Circuit at t = 0 LC
Using KVL, Taking inverse Laplace transform,
5 – I – 4I = 0 i(t) = L –1[I(s)]
I = 1A
C 1
VC(0–) = 4 × 1 = 4 V = 100 sin t
L LC
As the voltage across capacitor can not change
10 × 10 3 1
abruptly. = 100 × 3
× sin t
1 × 10 1 × 10 3
× 10 × 10 6
So, VC(0+) = VC(0–) = 4 V
Circuit at t = 0+ i(t) = 10 sin(104 t) A
GATE Previous Years Solved Paper 137
t=0 1 3 1 20 × 10 3
= (2 2) + 20 × 10 × =
C1 C2
s s s2
i(t)
20 × 10 3
Vs(s) =
s2
Circuit is s-domain, or, Vs(t) = 20000t u(t)
Vs(s) = (20000)t u(t)...
i(s)
which is the equation of a straight line passing
through origin.
12/s
Hence, option (c) is correct.
1/sC2
29. (*)
1/sC1
Circuit for t < 0,
By applying KVL,
R
12 I (s ) 1 1
+ + =0 V01
s s C1 C 2 + – +
Vc(0 ) = Vc(0 ) = V01
12C1C2 –
I(s) = = k (constant)
C1 + C 2
Circuit for t = :
i(t) = k (t) In steady-state capacitor becomes open-circuit.
Current i(t) is an impulse function. Vc( ) = –V02
28. (c)
R
Given: C = 1 µF, vc(0) = –2 V R
R = 100 , I = 20 mA V02
–
Circuit for the given condition at time t > 0 is Vc ( ) = V02
shown below. +
We know that,
VC2 (0) 2
= Vc(t) = Vc( ) – [Vc( ) – Vc(0+)] e–t/
s s I/Cs
= Time constant of given circuit
= 2 RC
+ Vc(t) = –V02 – (V02 – V01) e–t/2RC
I/s Vs(s) I/s R
= (V02 – V01) – (V02 – V01) e–t/2RC – V01
–
or, Vc(t) = (V02 + V01) (e–t/2RC – 1) + V01
30. (d)
Applying KVL we have, R
2 1 1 I
Vs(s) = + R+
s s Cs
V L
1 I 1 I
= 2 + IR + = ( IR 2) +
s Cs s Cs
138 Electronics Engineering Network Theory
2 33.. (a)
3V 1H
From the given circuit, consider the following
3V circuit diagram,
8
At t = 0–,
6
8 32
2 32
3/2 A 50 V
3V
After rearrangement,
5A 8
iL(0+) = iL(0–) = 1.5 A
At t = 0+, 6
–
1 8 i(0 ) = 2.5 A
50 V
2
3V 1H
For t 0, I0 = i(0–) = 2.5 A
3V we can write, i(t) = I0 e–Rt/L
i(t) = 2.5 e–4t A
GATE Previous Years Solved Paper 139
= 100 J
5 Two Port Networks
Q.9 A two-port network is shown in the figure. The Q.12 The impedance parameters Z11 and Z12 of the
parameters h21 for this network can be given by two-port network in the figure are
2 2 2
I1 R R I2
1 2
+ +
1 1
V1 R V2
– – 1 2
(a) Z11 = 2.75 and Z12 = 0.25
1 1 (b) Z11 = 3 and Z12 = 0.5
(a) (b) +
2 2
(c) Z11 = 3 and Z12 = 0.25
3 3
(c) (d) + (d) Z11 = 2.25 and Z12 = 0.5
2 2
[EC-2003 : 2 Marks]
[EC-1999 : 1 Mark]
Q.13 For the lattice circuit shown in the figure,
Q.10 The admittance parameter y12 in the two-port
Za = j2 and Zb = 2 . The value of the open-
network in figure is
Z11 Z12
I1 20 I2 circuit impedance parameters, are
Z21 Z22
Zb
E1 5 10 E2
1 3
Za
n 0
6 16 transformer shown in the figure are .
(a) Z11 = ; Z21 = 0 X
11 11
6 4 The value of X will be
(b) Z11 = ; Z21 =
11 11 I1 I2
6 16
(c) Z11 = ; Z21 =
11 11
V1 V2
4 4
(d) Z11 = ; Z21 =
11 11
[EC-2001 : 2 Marks] n:1
142 Electronics Engineering Network Theory
V1 20 V2
+ + +
Two-port +
6V V1 V2 1.5 V
– – Network
– – – –
0.1 0.1 10 1
(a) (b) 1 2
0.1 0.3 1 0.05
(i) S1 – open, S2 – closed A1 = 0 A, V1 = 4.5 V,
30 20 10 1
(c) (d) V2 = 1.5 V, A2 = 1 A
20 20 1 0.05
(ii) S1 – closed, S2 – open A1 = 4 A, V1 = 6 V,
[EC-2005 : 2 Marks]
V2 = 6 V, A2 = 0 A
Q.16 A two-port network is represented by ABCD
Q.18 The Z-parameter matrix for this network is
parameters given by
1.5 1.5 1.5 4.5
V1 A B V2 (a) (b)
= 4.5 1.5 1.5 4.5
I1 C D I2
1.5 4.5 4.5 1.5
If port-2 terminated by RL, the input impedance
(c) 1.5 1.5 (d) 1.5 4.5
seen at port-1 is given by
A + BRL ARL + C [EC-2008 : 2 Marks]
(a) (b)
C + DRL BRL + D Q.19 The h-parameter matrix for this network is
DRL + A B + ARL 3 3 3 1
(c) (d) (a) (b)
BRL + C D + CRL 1 0.67 3 0.67
[EC-2006 : 1 Mark]
3 3 3 1
(c) 1 0.67 (d) 3 0.67
Q.17 In the two-port network shown in the figure
below, Z12 and Z21 are, respectively [EC-2008 : 2 Marks]
I1 I2
Q.20 For the two-port network shown below, the
short-circuit admittance parameter matrix is
re I1 ro 0.5
1 2
0.5 0.5
(a) re and ro (b) 0 and – ro
(c) 0 and ro (d) re and – ro 1 2
[EC-2006 : 1 Mark]
GATE Previous Years Solved Paper 143
25 I1 I2
+ + 1 3 3 2
100 V V1 N V2 100
2
– – 1 2 2 2
1 1
(a) (b) [EC-2014 : 2 Marks]
90 90
1 1 Q.25 Consider the building block called ‘Network N’
(c) (d)
99 11 shown in the figure.
[EC-2011 : 2 Marks] Let, C = 100 µF and R = 10 k .
+ +
A B
Two such blocks are connected in cascade, as
– –
shown in the figure.
Q.22 For the same network, with 6 V dc connected at
port A, 1 connected at port B draws 7/3 A. If +
8 V dc is connected to port A, the open-circuit
Network Network
voltage at port B is V1(s)
(N) (N)
V3(s)
(a) 6 V (b) 7 V
–
(c) 8 V (d) 9 V
[EC-2012 : 2 Marks]
144 Electronics Engineering Network Theory
(5 + j4) (5 – j4)
Z11 Z12
Q.31 The Z-parameter matrix for the
Z21 Z22
(2 + j0)
two-port network shown is
GATE Previous Years Solved Paper 145
3 Two-port network
2:1
6
Port-1 Port-2
2 2 2 2 [EC-2020 : 2 Marks]
(a) 2 2 (b) 2 2
Q.35 Consider the two-port network shown in the
9 3 9 3
figure.
(c) 6 9 (d) 6 9
I1 1 I2
[EC-2016 : 2 Marks]
+ +
Q.32 The ABCD matrix for a two-port network is
V1 1 3V2 1 V2
defined by
– –
V1 A B V2
=
I1 C D I2 The admittance parameters, in Siemens are
I1 2 2 I2 (a) y11 = 1, y12 = –2, y21 = –1, y22 = 3
+ + (b) y11 = 2, y12 = –4, y21 = –4, y22 = 2
(c) y11 = 2, y12 = –4, y21 = –4, y22 = 3
V1 5 V2
(d) y11 = 2, y12 = –4, y21 = –1, y22 = 2
– – [EC-2021 : 2 Marks]
The parameter B for the given two-port network Q.36 A linear two-port network is shown in Fig. (a).
(in , correct to two decimal places) is ____ . An ideal DC voltage source of 10 V is connected
[EC-2018 : 1 Mark] across Port-1. A variable resistance R is
connected across Port-2. As R is varied, the
Q.33 In the given circuit, the two-port network has
measured voltage and current at Port-2 is shown
40 60 in Fig. (b) as a V2 versus –I2 plot. Note that for
the impedance matrix [ Z ] = . The V2 = 5 V, I2 = 0 mA and for V2 = 4 V, I2 = –4 mA.
60 120
When the variable resistance R at Port-2 is
value of ZL for which maximum power is replaced by the load shown in Fig. (c), the
transferred to the load is ______ . current I2 is ______ mA (Rounded off to one
10 I1 I2 decimal places).
+ +
I1 I2 A
120 V V1 [Z] V2 ZL + +
– –
10 V V1 Networks V2 R
[EC-2020 : 1 Mark]
– –
Q.34 For a two-port network consisting of an ideal B
lossless transformer, the parameter S21 (rounded Fig. (a)
ELECTRICAL EN GINEERIN G
(GATE Previous Years Solved Papers) E1 2 E2
Z11 Z12 I1 4 2 2 I2
Its impedance parameters are
Z21 Z22
given by E1 2 4 E2
2 1 1 1
(a) 1 1 (b) 1 2
1 1 2 1 (a) 0.125 (b) 0.167
(c) 1 2 (d) 1 1 (c) 0.625 (d) 0.25
[EE-2003 : 2 Marks]
[EE-2000 : 2 Marks]
Q.7 The Z-matrix of a two-port network is given by
Q.4 A passive two-port network is in steady-state.
Compared to its input, the steady-state output 0.9 0.2
Z=
can never offer 0.2 0.6 .
GATE Previous Years Solved Paper 147
Z2
(c) 1 V, 0, (d) 10 V, , 10
i1 i2
[EE-2006 : 2 Marks]
Z1 Z1
(b) V1 V2
Z1 + Z2 Z2
– –
Z1 Z2
(c)
Z1 Z1 + Z2 0 0
(a) z-parameters,
Z1 Z1 0 0
(d)
Z1 Z1 + Z2 1 0
(b) h-parameters,
[EE-2005 : 1 Mark] 0 1
Ri = 1 M , Ro = 10 , A = 106 V/V P
If Vi = 1 µV, the output voltage, input impedance
and output impedance respectively are f b d
148 Electronics Engineering Network Theory
Z11 + 1 Z12 + 1 s 4 + 3s 2 + 1 s 4 + 2s 2 + 4
(a) (a) (b)
Z21 Z22 + 1 s3 + 2s s2 + 2
Z11 + 1 Z12
(b) s2 + 1 s3 + 1
Z21 Z22 + 1 (c) (d)
s 4 + s2 + 1 s 4 + s2 + 1
Z11 + 1 Z12 [EE-2014 : 1 Mark]
(c)
Z21 Z22
Q.16 The Z-parameter of the two-port network shown
Z11 + 1 Z12 in the figure are:
(d) [EE-2010 : 2 Marks]
Z21 + 1 Z22 Z11 = 40 , Z12 = 60 , Z21 = 80 and Z22 = 100
Common Data for Questions (13 and 14): The average power delivered to RL = 20 , in
Watts, is _______ .
With 10 V dc connected at port ‘A’ in the linear non-
reciprocal two-port network shown below, the following 10 I1 I2
were observed: + +
(i) 1 connected at port ‘B’ draws a current of
3 A. 20 V V1 [Z] V2 RL
+ + [EE-2016 : 2 Marks]
A B
– – Q.17 The driving point input impedances seen from
the source Vs of the circuit shown below (in ),
Q.13 For the same network with 6 V dc connected at is _______ .
port ‘A’, 1 connected at port ‘B’ draws 7/3 A.
Is 2 2
If 8 V dc is connected to port ‘A’, the open-circuit
+ V –
voltage at port ‘B’ is 1
(a) 6 V (b) 7 V
Vs 3 4V1 4
(c) 8 V (d) 9 V
[EE-2012 : 2 Marks]
A1, B1, C1, D1, A2, B2, C2 and D2 are in generalized Q.19 In the two-port network shown, the h 11
circuit constants. If the Thevenin equivalent parameter (where, h11 = V1/Ii , when V2 = 0)
circuit at port 3 consists of a voltage source VT (in ) is _______ (upto 2 decimal places).
and an impedance ZT, connected in series, then 2I1
V1 A B + B1D2
(a) VT = , ZT = 1 2
A1 A2 A1 A2 + B1C 2
1 1
V1 A B + B1D2 + +
(b) VT = , ZT = 1 2 I1
A1 A2 + B1C 2 A1 A2
V1 1 V2
V1 A B + B1D2
(c) VT = , ZT = 1 2 – –
A1 + A2 A1 + A2
Answers
EC Two-Port Network
Answers
EC Two-Port Network
1. (c) 3. (a)
[Y] = [Y]A + [Y]B For reciprocal network,
AD – BC = 1
2. (c, d)
The poles lying on the imaginary axis must be 4. (a)
simple. A pole may lie at origin. V1 1 × I2
Z 12 = = =1
I2 I1 = 0 I2
150 Electronics Engineering Network Theory
V1 I1 (y3) I2
Z 22 =
I2 I1 = 0
20
2 I 2 × 1I 2
Z 22 = =3 E1 (y1) 5 10 (y2) E2
I2
2 I1 × 1
Z 11 = = 2
I1 1
y 12 = = 0.05
20
V2
Z 21 =
I1 I2 = 0 11. (c)
6 I1 + V1 6 I1 2 I1 V1 = Z11I1 + Z12I2
Z 21 = = V2 = Z21I1 + Z22I2
I1 I1
Z 21 = –8 V1
Z 11 =
I1 I2 = 0
5. (d)
ABCD parameter matrices, Applying KVL in LHS loop,
E1 – 2I1 – 4I1 + 10E1 = 0
A B A1 B1 A2 B2
= 11E1 = 6I1
C D C1 D1 C2 D2
E1 6
=
6. (b, c) I1 11
y 21 = y 12 V2
Z 21 =
h 21 = –h 12 I1 I2 = 0
10. (c)
1 2
y1 + y 3 y3 y11 y12 2×1 2
= R1 = = = 0.5
y3 y2 + y3 y 21 y 22 4 4
y 12 = –y 3
GATE Previous Years Solved Paper 151
1× 1 1 V1 V1
R2 = = = 0.25 h 11 = , h12 =
4 4 I1 V2
V2 = 0 I1 = 0
2×1
R3 = = 0.5
4 I2 I2
h 21 = , h22 =
2 0.5 0.5 2 I1 V2
1 2 V2 = 0 I1 = 0
(Z1) (Z2) When, V2 = 0
(Z3) 0.25 I1 10 I2
+
1 2 V1
Z1 + Z3 Z3
Z3 Z2 + Z3 –
Z 11 = Z1 + Z3 I1 = –I2
= 2.5 + 0.25 = 2.75 I2
= –1 = h21
Z 12 = Z3 = 0.25 I1
V1 = 10I1
13. (d)
V1
For Lattice network, Z-parameter is given as, = 10
I1
Za + Zb Za Zb
When, I1 = 0
2 2
Za Zb Za + Zb V1 = V2
2 2 V1
= h12 = 1
Za = 2j, Zb = 2 V2
V1
A= =n V1 RL V2
V2 I2 = 0
I1 V2 1 V1 = AV2 – BI2
D= = =
I2 V1 n I1 = CV2 – DI2
V2 = 0
V2 = –I2RL
15. (d) V1 AV2 BI 2 A I 2 RL BI 2
= =
V1 = h11I1 + h12V2 I1 CV2 DI 2 C I 2 RL DI 2
I2 = h21I1 + h22V2 ARL + B
Input impedance =
CRL + D
152 Electronics Engineering Network Theory
V1 V1 4.5
Z 12 = h 12 = = =3
I2 I1 = 0
V2 I1 = 0
1.5
V2 I2 1
Z 12 = h 22 = = = 0.67
I1 I2 = 0
V2 I1 = 0
1.5
When, I1 = 0
V1
V1 = 0 h 11 =
I1 V2 = 0
V1
= 0 = Z12 When, V2 = 0, Z21I1 + Z22I2 = 0
I2
When, I2 = 0, V2 = – I1ro Z21 I1
I2 =
Z22
V2
= – ro = Z21
I1 Z21 I 1
V1 = Z11 I1 + Z12
Z22
18. (c)
When, I= 0 V1 Z12 Z21
= Z11 = h11
then, V1 = 4.5 V I1 Z22
V2 = 1.5 V
4.5 × 1.5
I2 = 1A h 11 = 1.5 = 3
1.5
V1 = Z11I1 + Z12I2
V2 = Z21I1 + Z22I2 I2 Z21
h 21 = =
I1 Z22
V1 4.5 V2 = 0
Z 12 = = = 4.5
I2 1
I1 = 0 1.5
= = 1
1.5
V2 1.5
Z 22 = = = 1.5 3 3
I2 I1 = 0
1 So, h-parameter matrix is .
1 0.67
When, I2 = 0
then, I1 = 4A 20. (a)
V1 = 6V Short-circuit admittance parameters for a 2-port
V2 = 6V -network are,
V1 6 Y 11 = Ya + Yb
Z 11 = = = 1.5 Y 12 = Y21 = –Yb
I1 I2 = 0
4
Y 22 = Yb + Yc
V2 6 Yb
Z 21 = = = 1.5
I1 I2 = 0
4 1 2
1.5 4.5 Ya Yc
So, Z-parameter matrix is .
1.5 1.5
1 2
GATE Previous Years Solved Paper 153
V2 V 8
I2 = VTh = +4= +4=8V
100 2 2
Putting value of I2 in equation (i), For 8 V source.
V2 23. (c)
= 0.01V1 + 0.1V2
100
From the above solution:
–0.01V2 – 0.1V2 = 0.01V1
When, VDC = 10 V
V2 0.01 VTh = 9 V
=
V1 0.11 and RTh = 2
V2 1 When, RL = 7 , I = ?
or, =
V1 11 VTh = I(RTh + RL)
VTh
22. (c) I=
RTh + RL
+ + 9
A B = = 1A
2+7
– –
24. Sol.
Case-I:
VDC = 10 V, RL = 1 , I = 3 A When two, 2-port networks are connected in
VTh = I(RTh + RL) = 3(RTh + 1) parallel then individual Y-parameters are
VTh = 3RTh + 3 ...(i) added. Therefore, from the given network,
Case-II: 1
3 =
RL = 2.5 , 3
I = 2 A,
VDC = 10 V 1 1
3 = 3 =
VTh = 2(RTh + 2.5) 1 3 3 2
VTh = 2RTh + 5 ...(ii)
From equation (i) and (ii), 1
2 =
2
VTh = 9 V and RTh = 2 ...(iii)
Now, VTh depends on independent voltage
1 1 1 2
source and varies with applied voltage. RTh does 2 = 2 =
2 2
not depend on voltage source and is same for
any applied voltage source, since voltage source
is short-circuited while calculating RTh.
154 Electronics Engineering Network Theory
1 1 1 1
+ R+ I 1 (s) = RI2(s) = V1(s) ...(i)
3 3 3 Cs
Y1 =
1 1 1
+ 1
3 3 3 R+ I 2 (s) RI 2 (s) = 0 ...(ii)
Cs
Similarly for network (2), Also, V3(s) = I2(s) × R ...(iii)
1 From equation (i) and (ii), we get
1
Y2 = 2 1 1
1 = R+ × 1+ I 2 (s ) RI 2 ( s ) = V1 (s )
Cs RCs
1
2 RCs + 1 RCs + 1
= I 2 (s ) RI 2 ( s) = V1 ( s)
Cs RCs
5 5
3 6 RC 2 s 2V1 (s )
Thus, Y = Y1 + Y2 = or, I2(s) = ...(iv)
5 5 (1 + RCs )2 R 2C 2 s 2
6 3
Using equation (iii) and (iv), we get
I1 = Y11V1 + Y12V2
V3 (s) s 2 R2C 2
5 5 = ...(v)
= Y1 V2 ...(i) V1 (s) 1 + 3 RCs + s 2 R 2C 2
3 6
Q R = 10 k , C = 100 µF and RC = 1
I2 = Y21V1 + Y22V2
5 5 V3 (s) s2
= V1 + V2 ...(ii) =
6 3 V1 (s) 1 + 3s + s 2
I2 26. (c)
Also, h 22 =
V2 Converting -network to Y-network, we get,
I1 = 0
+ +
Z-parameter,
V1(s) I1(s) I2(s) V3(s)
Z 11 = 3 + 6 = 9
R R
Z 12 = Z21 = 6
– – Z 22 = 18 + 6 = 24
9 6
Applying mesh analysis to determine the [Z] =
6 24
current I2(s).
GATE Previous Years Solved Paper 155
5
For reciprocal network, AD – BC = 1,
I1 I2
+ + T =1
V1 10 10 V2 30. Sol.
– –
For T-network,
Za Zb
I1 2 2 I2 1 2
+ +
Zc
V1 4 V2
– – 1 2
Z 11 = Za + Zc
V1 = 6I1 + 4I2 Z 22 = Zb + Zc
V2 = 4I1 + 6I2 and Z 12 = Z21 = Zc
6 4 2j j
[Z] =
4 6 Given, [Z] = j 3+ 2j
1 6 4 0.3 0.2 Therefore, Z 12 = j2
Y= =
20 4 6 0.2 0.3 and Z 22 = 3 + 2j = 3 + j + j
Ignoring negative sign: = Zb + Zc = Rb + j + Zc
Rb = 3
0.3 0.2
[Y] =
0.2 0.3 31. (a)
Redrawing the circuit,
28. (b)
2
I1 (5 + j4) (5 – j4) I2
3 –
+ +
+
1 1
V2 (2 + j0) V2
6
– – I1
2
V1 A B V2
=
I1 C D I2 + V1 –
When, I2 = 0 V1
Z 11 = =3 6=2
V1 = (5 + j4 + 2) I1 I1
V2 = 2I1
V2 = –3 × I3
V1 7 + j4 6
A = = = 3.5 + j 2 = 3 × I1 × = 2 I1
V2 I2 = 0
2 9
V2
Z 21 = = 2
I1 1 I1
C = = = 0.5
V2 I2 = 0
2
V2
Now, Z 22 = =3 6=2
From here only (b) option matches. I1 I1 = 0
156 Electronics Engineering Network Theory
3 34. Sol.
V1 = –6 × I6 = 6 × I 2 × = 2
9 For ideal transformer on n : 1, the scattering
2 2 matrix is,
[Z] =
2 2
n2 1 2n
2 2
S11 S12 n +1 n +1
=
3 I2
S21 S22 2n 1 n2
–
n2 + 1 1 + n2
+ +
V2 2n 2(2) 4
– S21 = 2
= 2
= = 0.8
n +1 2 +1 5
6
I1 = 0 35. (d)
Consider the two-port network,
+ V1 – V1 V2
I1 1 I2
+ +
32. Sol.
V1 1 3V 2 1 V2
V1
B= – –
I2 V2 = 0
For Y-parameters:
When, V2 = 0 (i.e., when port-2 is short-circuited)
I1 = y11V1 + y12V2
I1 2 2 I2 I2 = y21V1 + y22V2
+ + By KCL at (V1)
V1 V1 V2
V1 5 V2 = 0 I1 + 3V2 = +
1 1
– – I1 = 2V1 – 4V2 ...(1)
V2 V2 V1
V1 7 V1 By KCL at (V2), I2 = +
I1 = = 1 1
2 + (5 2 ) 24 I2 = –V1 + 2V2 ...(2)
5 5V1 From equation (1) and (2),
I2 = I1 × =
5 +2 24 I1 = 2V1 – 4V2
I2 = –V1 + 2V2
V1 24
So, B= = = 4.80 y11 y12 2 4
I2 5
y 21 y 22 =
1 2
33. Sol.
36. (4)
From maximum power transfer theorem,
ZL = ZTh For I2 = 0 : V2 = VOC = 5 V
For Thevenin’s resistance RTh,
Z12 × Z21
ZTh = Z22 V2
Rs + Z11
For given data, 5V
60 × 60
ZTh = 120 = 48
10 + 40 4V
ZL = 48
–I2
0 4 mA 20 mA
GATE Previous Years Solved Paper 157
1k
5V
10 V
Answers
EE Two Port Networks
10. (a) 11. (c) 12. (c) 13. (b) 14. (c) 15. (a) 16. (35.55) 17. (20)
Solutions
EE Two Port Networks
1. (b) 3. (b)
For reciprocity, 2 1
h 12 = –h 21 [y] =
1 1
For symmetry, [z] = [y]–1
h11 h12 1 1 1 1
=1 1
h21 h22 = =
2 1 1 2 1 2
2. Sol. 4. (c)
Using KCL, For a passive two-port network, output power
V1 V1 V2 1 1 can never be greater than input power.
I1 = + = V1 V2
10 10 5 10
Again using KCL, 5. (b)
Using KVL,
V2 V2 V1 1 1
I2 = + = V1 + V2 E1 = 2I1 + 2(I1 + I2)
10 10 10 5
Again using KVL,
0.2 0.1
Hence, [y] = E2 = 2I2 + 2(I1 + I2)
0.1 0.2
4 2
[z] =
2 4
158 Electronics Engineering Network Theory
Y11 Y12 v1 Z1 v2
1/3 1/6
=
Y21 Y22 1/6 1 /3
I1 I1 + I2
E1 2 4 E2 V1 Z2 V2
E2 E V1 = AV2 + BI2
I2 = = 2
2 + (2 + 4) 4 4 I1 = CV2 + DI2
V2 = Z2(I1 + I2) ...(i)
I2
Ix = ×4 I1
(2 + 2) + 4 C=
V2 I2 = 0
I 2 1 E2 E
= = = 2 Putting, I2 = 0 in equation (i),
2 2 4 8
V2 = Z2I1
E2 E
E1 = 2 I x = 2 = 2 V2 1 1
8 4 Z2 = = =
I1 I2 = 0
C 0.025 45°
E1
= 0.25 Z 2 = 40 –45°
E2
10. (a)
7. (d)
Output voltage = V0 = AVi
0.9 0.2 V0 = 106 × 1 × 10–6 = 1 V
[z] = 0.2 0.6
[Given: A = 106 V/V, Vi = 1 µV)
0.6 0.2 To calculate input impedance, Vdc source is
connected at input port,
0.2 0.9
[y] = [ z] 1 = Ii Ri Ro
[0.9 × 0.6 0.04]
+ +
1.2 0.4
= 0.4 1.8 Vdc Vi + AVi
– Vo
y 22 = 1.8
– –
GATE Previous Years Solved Paper 159
Input impedance, V2 0
g 22 = = =0
V I1 I2
Z i = dc V1 = 0
Ii
as loop is not closed, Ii = 0 g11 g12 0 0
So, g-parameters = =
g21 g22 0 0
Vdc
So, Zi =
0
12. (c)
To calculate output impedance, Vdc source is
I1 1 a I2
connected at output port, e c
Ii Ri Ro Io ef ab
V1 V1 P V2
+ +
f d
b
Vi + AVi Vo
–
V1ab = Z11I1 + Z12I2 ...(i)
– – V2 = Z21I1 + Z22I2 ...(ii)
Output impedance, As 1 resistor is connection in series with the
V0 I0 R0 + AVi network at port-1.
Z0 = =
I0 I0 V2 does not get affected,
ef
As, Vi = 0 V1 = V1ab + I 1 × 1
I 0 R0 + A × 0 = Z11I1 + Z12I2 + I1
Z0 = = R0 = 10
I0 = (Z11 + 1) I1 + Z12I2
Modified Z-parameter
11. (c) Z11 + 1 Z12
=
I1 = g11V1 + g12I2 Z21 Z22
V2 = g21V1 + g22I2
13. (b)
I1 I2
(i) V1 = 10 V; V2 = 3 V
+ +
I2 = –3 A; V1 = AV2 – BI2
V1 V2 10 = 3A + 3B ...(i)
(ii) V2 = 5V
– – I2 = –2 A
Since port-1 is open-circuit, 10 = 5A+2B ...(ii)
I1 = 0 10
A= ...(iii)
Port-2 is short-circuit, 9
V2 = 0 20
B= ...(iv)
9
I 0
g 11 = 1 = =0 Given, V1 = 8V
V1 I2 = 0
V1
(V2)OC = ?
I1 0 I2 = 0
g 12 = = =0 V1 = AV2 – BI2
I2 V1 = 0
I2
8 = A(V2)OC – 0
V2 0 8 8
g 21 = = =0 (V2)OC = = = 7.2 V
V1 I2 = 0
V1 A 10 /9
160 Electronics Engineering Network Theory
L1 (a) 4 (b) 1
Vs RL
1 1
(c) (d)
2 4
C2
[EC-2007 : 2 Marks]
(a) low pass filter (b) high pass filter Q.4 The driving point impedance of the following
(c) band pass filter (d) band reject filter network, is given by
[EC-2001 : 1 Mark] 0.2 s
Z(s ) = 2
s + 0.1 s + 2
Q.2 The RC circuit shown in the figure is
R
+ C + Z(s)
L C R
Vi R C Vo
The value of the load resistance RL is (a) ab, bc, ad (b) ab, bc, ca
(a) R/4 (b) R/2 (c) ab, bd, cd (d) ac, bd, ad
(c) R (d) 2R [EE-1994 : 1 Mark]
[EC-2009 : 1 Mark]
Q.3 Two identical coils of negligible resistance when
Q.6 The transfer function V2(s)/V1(s) of the circuit connected in series across a 200 V, 50 Hz source
shown below is draws a current of 10 A. When the terminals of
100 µF
one of the coils are reversed, then current drawn
+ + is 8 A. The coefficient of coupling between the
10 k two coils is _______ .
V1(s) V2 ( s )
[EE-1997 : 2 Marks]
100 µF
– – Q.4 A major advantage of active filter is that they
0.5s + 1 3s + 6 can be realized without using
(a) (b)
s+1 s+2 (a) op-amps (b) inductors
s+2 s+1 (c) resistors (d) capacitors
(c) (d)
s+1 s+2 [EE-1997 : 1 Mark]
[EC-2013 : 1 Mark]
Q.5 The effective inductance of the circuit across the
terminals A, B in the figure shown below is
ELECTRICAL EN GINEERIN G
(GATE Previous Years Solved Papers) 4H
A
Q.1 The equivalent inductances seen at terminals
A-B in figure is ______ H. 1H
3H 5H
4H
A
2H
2H
B
1H 4H 6H
1H
(a) 9 H (b) 21 H
B (c) 11 H (d) 6 H
4H
[EE-1998 : 2 Marks]
[EE-1992 : 2 Marks]
Q.6 The impedance seen by the source in the circuit
Q.2 Figure shows a dc resistive network and its
in figure is given by
graph is drawn a side. A ‘proper tree’ chosen
for analysis the network will not contain the 4 –j2
1:4
edges:
ZL = 10 30°
b b
a c a c
[EE-2000 : 1 Mark]
125 80 100 80
(a) and (b) and
Q.8 In the circuit shown in figure it is found that the 100 100 100 100
input ac voltage (Vi) and current ‘i’ are in phase.
100 100 80 80
(c) and (b) and
M 100 100 100 100
The coupling coefficient is K = , where
L1 L2 [EE-2013 : 2 Marks]
M is the mutual inductance between the two
coils. The value of ‘K’ and the dot polarity of the Q.11 Two identical coupled inductors are connected
coil P-Q are in series. The measured inductances for the two
possible series connections are 380 µH and
K
240 µH. Their mutual inductance in µH is
–j2 10 P Q ________ .
j8 j8 [EE-2014 : 1 Mark]
L1 L2
vi i Q.12 Find the transformer ratios a and b such that the
impedance (Zin) is resistive and equals 2.5
when the network is excited with a since wave
voltage of angular frequency of 5000 rad/sec.
(a) K = 0.25 and dot at P
C = 10 µF L = 1 mH
(b) K = 0.5 and dot at P 1:a
(c) K = 0.25 and dot at Q
(b) K = 0.5 and dot at Q Zin R = 2.5
[EE-2002 : 2 Marks]
1:b
Q.9 A first order, low pass filter is given with
R = 50 and C = 5 µF. What is the frequency at (a) a = 0.5, b = 2.0 (b) a = 2.0, b = 0.5
which the gain of the voltage transfer function (c) a = 1.0, b = 1.0 (d) a = 4.0, b = 0.5
of the filter is 0.25? [EE-2015 : 1 Mark]
(a) 4.92 kHz (b) 0.49 kHz
(c) 2.46 kHz (d) 24.6 kHz Q.13 Two identical coils each having inductance L
are placed together on the same core. If an overall
[EE-2002 : 2 Marks]
inductance of aL is obtained by interconnecting
Q.10 The following arrangement consists of an ideal these two coils, the minimum value of a is
transformer and an attenuator which attenuates ________ .
by a factor of 0.8. An a.c. voltage VWX1 = 100 V is [EE-2015 : 2 Marks]
applied across WX to get an open-circuit voltage
V YZ1 across YZ. Next, an a.c. voltage Q.14 If an ideal transformer has an inductive load
VYZ2 = 100 V is applied across YZ to get an open- element at port 2 as shown in the figure below,
circuit voltage VWX2 across WX. Then VYZ1/ the equivalent inductance at port 1 is
VWX1, VWX2/VYZ2 are respectively.
GATE Previous Years Solved Paper 165
Answers
EC Network Functions
Solutions
EC Network Functions
1. (d) At = ;
Analyzing the circuit for = 0 and = . Rs
At = 0 ;
Rs
Vs RL Vo
Vs RL Vo
Vo RL
= (finite value)
Vs RL + Rs
= 0, Ind = L = 0 (SC)
1
cap = = (OC)
C
Vo RL
= (finite value)
Vs RL + Rs
=0 =
166 Electronics Engineering Network Theory
1 Bandwidth of filter 2;
At = ;
LC R R 4R
B2 = = =
Rs L2 L1 /4 L1
B1 1
So, =
B2 4
RL
4. (d)
0.2 s
Z(s) = 2
vo = 0 s + 0.1s + 2
2. (c) s 2 + 0.1s + 2 s 1 2
Y(s) = = + +
0.2s 0.2 2 0.2 s
At , capacitor short-circuited
Circuit looks like, 10
= 5s + 0.5 +
s
+ R + Comparing with
1 1
Vi R Vo Y(s) = Cs + +
R Ls
1
– – C = 5 F, R = =2
0.5
Vo 1
=0 L= = 0.1 H
Vi 10
At 0, capacitor open-circuited
5. (c)
Circuit looks like,
+ R +
+ R +
Vi Z Vo
Vi R Vo
– –
– –
RL
Z =
Vo 1 + sRLC
=0
Vi Z RL
H(s) = =
So frequency response of the circuit will be Z + R ( RL + R ) + sRRLC
If, R = RL
1
H(s) =
2 + sRC
6. (d)
1
10 × 103 +
So the circuit is bandpass filter. V2 (s) 100 × 10 6 s
=
V1 (s) 1 1
3. (d) 10 × 103 + +
100 × 10 6 s 100 × 10 6 s
Bandwidth of series RLC circuit is R/L V2 (s) s × 10 4 + 10 4 10 4 (1 + s)
Bandwidth of filter 1; = =
V1 (s) s × 10 4 + 10 4 + 10 4 10 4 ( s + 2)
R V2 (s) s+1
B1 = =
L1 V1 (s) s+2
GATE Previous Years Solved Paper 167
Answers
EE Network Functions
9. (c) 10. (b) 11. (35) 12. (b) 13. (0) 14. (b) 15. (10)
Solutions
EE Network Functions
M13
200
L2 8 = ...(ii)
(2 L + 2 M12 )
M23
On solving equation (i) and equation (ii),
B 1
L3 we get, M12 = L
9
L = L1 + L2 + L3 – 2M12 + 2M23 – 2M13 Which can be written as,
= 4 + 4 + 4 – (2 × 2) + (2 × 1) – (2 × 1) 1 1
= 8H M12 = L L= L L
9 9
2. (b) 1
Hence, coefficient of coupling = .
Tree must not contain any closed loop. 9
Hence option (b) is correct.
4. (b)
3. Sol. Inductive coils are bulky in nature.
Case-I Case-II
5. (c)
L1 L1
L1
A
220 V M 12 220 V M12
L2 L2 M12
50 Hz 50 Hz
M13 L2
V M23
I1 = B
(L1 + L2 2 M12 ) L3
I1 > I 2 6. (c)
2
Taking, I1 = 10 A 1
Z = (4 j 2) + × 10 30°
4
and I2 = 8 A
= (4.54 – j1.69)
168 Electronics Engineering Network Theory
7. (d) 100
Hence, VWX 2 = = 80 V
1.25
M = K L1 L2
VYZ1 100
Where, K = coefficient of coupling =
VWX1 100
Q 0 < K<1
VYZ2 80
M L1 L2 =
VWX2 100
8. (c)
11. Sol.
Input ac voltage and current will be in phase
only at resonance condition. The two possible series connection are shown
i.e., XC = XL below:
Let the mutual inductance be M
j12 = j 8 + j 8 + 2 k ( j 8) × ( j 8)
L1 L2
I
12 = 8 + 8 + 16 k
4 1
k= = = 0.25 M
16 4
(i) Additive connection,
Hence coupling will be opposite.
Leq. = L1 + L2 + 2M = 380 µH
Dot will be at Q.
L1 L2
I
9. (c)
R M
+ + (ii) Subtractive connection,
Leq. = L1 + L2 – 2M = 240 µH
Vi C Vo
Thus, L1 + L2 + 2M = 380 µH ...(i)
– – and L1 + L2 – 2M = 240 µH ...(ii)
Solving equations (i) and (ii), we get,
Vo 1/ j C 1 4M = 10 µH or M = 35 µH
T.F. = = =
Vi R + 1 1 + j CR Mutual inductance,
j C
M = 35 µH
1
Gain = 12. (b)
1 + ( CR)2
C = 10 µF L = 1 µF
1
0.25 =
6
1 + ( × 5 × 10 × 50)2
On solving, R = 2.5
Zin
= 15.49 × 103 rad/sec.
15.49 A 1:b B 1:a C
f= = 2.46 kHz
2 2.5
(Req)B =
10. (b) a2
...(i)
From problem,
Zin = 2.5 ...(ii) Port-1 Port-2
From equation (i) and (ii), At port 1 i.e., high voltage side impedance will
a2 b 2 = 1 ...(ii) be high and current will be low, So n2L.
5 1
2 =0 15. Sol.
b 5 × 10 2
The above circuit can be drawn by transferring
5 × 5 × 10–2 = b2
secondary circuit to primary side.
b = 0.5 and a = 2
10j
13. Sol.
I
Case-I: 80000
Leff. = L1 + L2 = 2L, a = 2 (100)2
100 V
Case-II: 40000
j
L1L2 2 (100)2
L L
Leff. = = = , a = 0.5
L1 + L2 2L 2
100 V 100 V
Case-III: I= =
(8 + 10 j 4 j ) (8 + 6 j )
If both are differentially coupled then,
So the rms value of I will be 10 A.
Leff. = 0
Minimum value = 0
GATE-2023
Electronics Engineering
Contents
S.No. Topic Page No.
n x[n ] for 0 n 10
Q.18 A discrete-time signal x[n] = sin( 2n), n being an y[n] =
x[n] x[n 1] otherwise
integer, is
(a) periodic with period Which one of the following statements is true
(b) periodic with period 2 about the system?
(c) periodic with period /2 (a) It is causal and stable.
(d) not periodic (b) It is causal but not stable.
[EC-2014 : 1 Mark] (c) It is not causal but stable.
(d) It is neither causal nor stable.
Q.19 The waveform of a periodic signal x(t) is shown
[EC-2017 : 1 Mark]
in the figure.
Q.23 The input x(t) and the output y(t) of a
x(t)
continuous-time system are related as,
3 t
y(t ) = x(u) du
–2 1 4 t T
t
–4 –1 2 3
The system is
–3
(a) linear and time-variant.
(b) linear and time-invariant.
t 1 (c) non-linear and time-variant.
A signal g(t) is defined by g(t ) = x .
2 (d) non-linear and time-invariant.
The average power of g(t) is ________ . [EC-2017 : 1 Mark]
[EC-2015 : 1 Mark]
Q.24 Let the input be ‘u’ and the output be ‘y’ of a
Q.20 Two sequence x1[n] and x2[n] have the same system, and the other parameters are real
energy. Suppose x1[n] = 0.5n u[n], where is a constants. Identify which among the following
positive real number and u[n] is the unit step systems is not a linear system:
sequence. Assume, d3 y d2 y dy
(a) 3
+ a1 2
+ a2 + a3 y
1.5 for n = 0, 1 dt dt dt
x2 [ n] =
0 otherwise du d2u
b3 u + b2 + b1 2
Then the value of is _______ . dt dt
[EC-2015 : 2 Marks] (with initial rest conditions)
t
Q.21 A continuous time function x(t) is periodic with (t )
(b) y(t ) = e u( ) d
period T. The function is sampled uniformly 0
with a sampling period Ts. In which one of the (c) y = au + b, b 0
following cases is the sampled signal periodic? (d) y = au [EC-2018 : 1 Mark]
4 Electronics Engineering Signals & Systems
2.7
t
–3.3 –1.3 –0.3 0.7 3.7 4.7
t –2
0 T 2T
(t T ) (t 2T ) [EE-2017 : 1 Mark]
(a) u(t ) u(t T ) + u(t T ) u(t 2T )
T T
Q.12 The signal energy of the continuous-time signal,
t t
(b) u(t ) + u(t T ) u(t 2T ) x(t) = [(t – 1) u(t – 1)] – [(t – 2) u(t – 2)]
T u
– [(t – 3) u(t – 3)] + [(t – 4) u(t – 4)], is
(t T ) (t 2T )
(c) u(t ) u(t T ) + u(t ) u(t )
11 7
T T
(a) (b)
(t T ) (t 2T ) 3 3
(d) u(t ) + u(t T ) 2 u(t 2T )
T T 1 5
(c) (d)
[EE-2014 : 2 Marks] 3 3
[EE-2018 : 2 Marks]
+
Q.9 The value of t Q.13 The symbol a and T, represent positive
e (2t 2) dt , where (t) is the
quantities, and u(t) is the unit step function.
Which one of the following impulse responses
Dirac delta function, is
is not the output of a causal linear time-invariant
1 2 system?
(a) (b)
2e e
(a) 1 + e–at u(t) (b) e+at u(t)
1 1 (c) e–a(t – T) u(t) (d) e–a(t + T) u(t)
(c) 2 (d) 2
e 2e [EE-2019 : 1 Mark]
[EE-2016 : 1 Mark]
Q.14 xR and xA are, respectively, the rms and average
Q.10 Consider the system with following input- values of x(t) = x(t – T), and similarly, yR and yA
output relation y[n] = (1 + (–1)n) x[n], where x[n] are, respectively, the rms and average values of
is the input and y[n] is the output. The system is y(t) = kx(t) k, T are independent of t.
(a) invertible and time invariant Which of the following is true?
(b) invertible and time varying (a) yA = kxA ; yR = kxR
(c) non-invertible and time invariant (b) yA = kxA ; yR kxR
(d) non-invertible and time varying (c) yA kxA ; yR kxR
[EE-2017 : 1 Mark] (d) yA kxA ; yR = kxR
[EE-2020 : 1 Mark]
Q.11 The mean square value of the given periodic
waveform f(t) is _______ .
6 Electronics Engineering Signals & Systems
Answers
EC Basics of Signals & Systems
9. (a) 10. (d) 11. (c) 12. (b) 13. (c) 14. (a) 15. (d) 16. (a)
17. (b) 18. (d) 19. (2) 20. (1.5) 21. (b) 22. (a) 23. (b) 24. (c)
25. (0) 26. (c, d)
Solutions
EC Basics of Signals & Systems
1. (c) 4. (a)
For the given system if the response is zero prior 3t 3× 0
to the application of the excitation. Then such a (t ) cos dt = f (0) = cos = cos 0 = 1
2 2
system is called causal system.
5. (b)
2. (a, b, d)
(a) s(t) is periodic as the ratio of any two E= f (t )2 dt
frequencies = p/q is rotational.
Where p and q are integers.
E = f (2t )2 dt
(b) s(t) is periodic with =8
(d) 2 cosA cosB = cos(A – B) + cos(A + B)
dp dp
= f ( p )2 2t = p ; dt =
1 2 2
s(t ) = [cos 2t + cos 6t ]
2
E
So, s(t) is periodic with fundamental E =
2
frequency 2 rad/sec.
6. (a)
3. (b)
y(n – n0) = x(n – n0 + 1) (time varying)
ay1(t) = atx1(t) y(n) = x(n + 1) (depends on future)
ay2(t) = atx2(t) i.e., y(1) = x(2) (non-causal)
a[y1(t) + y2(t)] = a[tx1(t) + tx2(t)] For bounded input, system has bounded output.
So it is stable,
System is linear,
y(n) = x(n); n 1
y(t – t0) = (t – t0) x(t – t0) = 0; n=0
Delay is introduced. So, time varying. = x(n + 1), n –1
So, system is linear.
GATE Previous Years Solved Paper 7
x (–n) = [4, 1 2 j , 4 + j 5]
t
x( n ) x ( n )
xCAS (n) = 11. (c)
2
= [ 4 2.5 j , 2 j , 4 2.5 j ] 5
y(n) = sin n x(n)
6
Let, x(n) = (n)
8. (a)
y(n) = sin0 = 0 (Bounded)
u(t ) + u( t ) BIBO stable.
Even part =
2
u(t ) u( t ) 12. (b)
Odd part = The Hilbert transformer is characterised by the
2
impulse response,
u(t ) u(–t)
1
h(t) = t (– , )
1 1 t
t t
h(t) 0 for t < 0
Thus, the Hilbert transformer is a non-causal
system.
1
ue(t) = 13. (c)
2
A system is causal if the output at any time
ue(t )
depends only on values of the input at the
1/2 present time and in the past.
15. (d)
t
t
y = x ( ) cos(3 ) d
x(t )
uo(t) =
2 t t0
uo(t) y(t – t0) = x ( ) cos(3 ) d
1/2
y (t) for input x(t – t0) is
t t
0
–1/2 y (t) = x( t0 )cos 3 d
(t t0 )
9. (a) y (t) = x ( )cos 3( + t0 ) d
s(t) = 8 cos 20 t + 4 sin 15 t y (t) y(t – t0) so system is not time invariant for
2
input x( ) = cos(3 ) (bounded input),
= 8 sin20 t + 4 sin15 t
t
82 4 2 y(t) = cos2 (3) d as t
P= + = 32 + 8 = 40
2 2
So, for bounded input-output is not bounded
therefore system is not stable.
8 Electronics Engineering Signals & Systems
2 y1(t) = x(u to ) du = x( ) d
3
1 3 t T t to T
Average power = (t 1) dt = 2
6 2 = y(t – t0)
1
System is time invariant.
20. Sol.
2
24. (c)
Energy of x1[n] = x1 [ n ]
y = au + b, b 0 is a non-linear system.
n=
2 1 n 1
= = 2
4 1
n=0 1
4
2 4
=
3
GATE Previous Years Solved Paper 9
Answers
EE Basics of Signals & Systems
10. (d) 11. (6) 12. (d) 13. (a) 14. (b)
Solutions
EE Basics of Signals & Systems
8. (a)
We have,
6
2t
e (t t1 ) dt = e–2 1
5
2. (b) t
0 T 2T
1/2
T /2 2 T
1 2A 2 The given function can be realized as follows:
Rms value = t dt + A dt
T T
0 T /2 u(t) u(t – T)
1 1
2
= A
3
t t
3. (d) 0 0 T
u(t) u(t – T)
Rms value (Unit step function right shifted)
(Unit step function)
2 (i) (ii)
/3 2 /3
1
= (100)2 dt + ( 100)2 dt + (100)2 dt r(t)
0 /3 2 /3
1 1
1/2
1
= 100 2 = 100 V
t t
0 0 T
4. (d) r(t) = tu(t) (t T )
(Ramp function) u( t T )
T
t t
1 1 5 (Right shifted unit ramp function)
Vc (t ) = i(t ) dt = 5 (t ) dt = u(t ) (iii)
C C C
1
7. (b)
y[n] = x[3 – 4n] = x[–4n + 3]
t
So to obtain y[n] we first advance x[n] by 3 unit. 0 T 2T
i.e., z1[n] = x[n + 3] (t T )
u(t 2T )
T
(iv)
10 Electronics Engineering Signals & Systems
Combining the functions (i), (ii), (iii) and (iv), Invertibility test:
we get the given function. x(n) y( n )
(n 1) [1 + ( 1)n ] ( n 1) = [1 + ( 1)1 ( n 1) = 0 (n 1) = 0
f(t)
2 (n 1) [1 + ( 1)n ]2 ( n 1) = [1 + ( 1)1 ]2 ( n 1) = 0.2 ( n 1) = 0
11. Sol.
t Mean square value = Power of f(t)
0 T 2T
1 2
Mean square value = f (t ) dt
Therefore, T0 T0
(t T ) 1 2
f(t) = u(t ) u(t T ) + = [4 × 1 + 2 2 × 2]
T 4
(t 2t ) 16 + 8 24
u(t T ) u(t 2T ) = = =6
T 4 4
1 1
u(t ) u(t T ) + r (t T ) r(t 2T ) 12. (d)
T T
1 x(t) = r(t – 1) – r(t – 2) – r(t – 3) + r(t – 4)
or u(t ) u(t T ) + (t T ) u(t 2T ) u(t 2T )
T x(t)
9. (a) 1
t–1 –(t – 4)
t
To find value of e (2t 2) dt
t
1 2 3 4
1
Since, (t 1)
(2t – 2) =
2 2
x(t ) dt
Ex(t) =
Above integral can be written as,
1 1 t 1 2 3 4
e t
(t 1) dt = e =
2 2e = (t 1)2 dt + 12 dt + { (t 4)} 2 dt
2
1 2 3
10. (d) 1 1 2 5
= + 1+ = +1 =
3 3 3 3
Given relationship,
y(n) = [1 + (–1)n] x(n) 13. (a)
The invariant test: a and T represents positive quantities.
Delay of
u(t) is unit step function,
x( n) System y(n) y( n – 1)
‘1’
= [1 + (–1)
n–1
]
h(t) = 1 + e–at u(t), is non-causal
x(n – 1) Here ‘1’ is a constant and two sided so the
system will be non-causal, because for causal
Delay of System y (n) = [1 + (–1) ]
n system,
‘1’ x(n – 1) x(n – 1) h(t) = 0, t < 0
Since, y(n – 1) y (n) 0, t > 0
So, the system is time variant.
GATE Previous Years Solved Paper 11
YR = K X R
Case (i): When K is real and positive then,
K =K
and YR = KXR
Thus option (a) is satisfied.
2 LTI Systems Continuous and
Discrete (Time Domain)
ELECTRO NICS EN GINEERIN G 1 at
(a) ae–at (b) (1 e )
(GATE Previous Years Solved Papers) a
(c) a(1 – eat) (d) 1 – e–at
Q.1 The impulse response and the excitation
[EC-1998 : 1 Mark]
function of a linear time invariant causal system
are shown in Fig. (a) and (b) respectively. The Q.4 Let u(t) be the step function. Which of the
output of the system at t = 2 sec. is equal to waveform in the figure corresponds to the
h(t ) x(t)
convolution of u(t) – u(t – 1) with u(t) –u(t – 2)?
1 1
1 1/2
(a) (b)
0 6 t(sec) 0 2 6 t(sec)
0 1 2 0 1 2 3
1 t t
(a) 0 (b)
2
1 1
3
(c) (d) 1
2
[EC-1990 : 2 Marks] (c) (d)
Q.7 The impulse response h[n] of a linear time- (a) is positive and is positive.
invariant system is given by (b) is negative and is negative.
h[n] = u[n + 3] + u[n –2] – 2u[n – 7] (c) is positive and is negative.
where u[n] is the unit step sequence. (d) is negative and is positive.
The above system is [EC-2008 : 1 Mark]
(a) stable but not causal.
Q.10 A discrete-time linear shift-invariant system has
(b) stable and causal.
an impulse response h[n] with h[0] = 1, h[1] = –1,
(c) causal but unstable. h[2] = 2, and zero otherwise. The system is given
(d) unstable and not causal. an input sequence x[n] with x[0] = x[2] = 1 and
[EC-2004 : 1 Mark] zero otherwise. The number of non-zero samples
in the output sequence y[n], and the value of
Q.8 Which of the following can be impulse response
y[2] are, respectively
of a causal system?
(a) 5, 2 (b) 6, 2
h (t )
(c) 6, 1 (d) 5, 3
[EC-2008 : 2 Marks]
(a)
Q.11 A system is defined by its impulse response
t h(n) = 2n u(n – 2). The system is
(a) stable and causal.
h (t ) (b) causal but not stable.
(c) stable but not causal.
(b) (d) unstable and non-causal.
t [EC-2011 : 1 Mark]
Q.9 The impulse response h(t) of a linear time- (a) product of h1(t) and h2(t)
invariant continuous time system is described (b) sum of h1(t) and h2(t)
by h(t) = exp( t) u(t) + exp( t) u(–t), where u(t) (c) convolution of h1(t) and h2(t)
denotes the unit step function, and and are (d) subtraction of h2(t) and h1(t)
real constants. This system is stable if [EC-2013 : 1 Mark]
14 Electronics Engineering Signals & Systems
Q.14 Consider a discrete-time signal The impulse responses of the systems are
n for 0 0 10 h1(t) = 2 (t + 2) – 3 (t + 1)
x[n ] = h2(t) = (t – 2)
0 otherwise
If y[n] is the convolution of x[n] with itself, the If the input x(t) is a unit step signal, then the
value of y[4] is ________ . energy of y(t) is __________ .
[EC-2014 : 2 Marks] [EC-2017 : 2 Marks]
Q.15 The result of the convolution x(–t) (–t –t0) is Q.20 The output of y[n] of a discrete-time system for
(a) x(t + t0) (b) x(t – t0) an input x[n] is
(c) x(–t + t0) (d) x(–t – t0) y[n ] = max x [ k]
k n
[EC-2015 : 1 Mark]
The unit impulse response of the system is
Q.16 The impulse response of an LTI system can be
(a) 0 for all n.
obtained by
(b) 1 for all n.
(a) differentiating the unit ramp response
(c) unit step signal u[n].
(b) differentiating the unit step response
(d) unit impulse signal [n].
(c) integrating the unit ramp response
(d) integrating the unit step response [EC-2020 : 1 Mark]
[EC-2015 : 1 Mark] Q.21 For a unit step input u[n], a discrete-time LTI
system produces an output signal (2 [n + 1] +
Q.17 Which one of the following is an eigen function
of the class of all continuous-time, linear, time- [n] + [n – 1]). Let y[n] be the output of the system
invariant systems (u(t) denotes the unit-step n
1
function)? for an input u(n) . The value of y[0] is
2
(a) e j ot u(t ) (b) cos( ot)
________ .
(c) e j ot (d) sin ( ot) [EC-2021 : 2 Marks]
[EC-2017 : 1 Mark] Q.22 The output of four systems (S1, S2, S3 and S4)
Q.18 Two discrete-time signals x[n] and h[n] are both corresponding to the input signal sin(t) for all
non-zero only for n = 0, 1, 2 and are zero time t, are shown in the figure.
otherwise. It is given that,
sin(t ) S1 sin(–t)
x[0] = 1, x[1] = 2, x[2] = 1, h[0] = 1
Let y[n] be the linear convolution of x[n] and sin(t ) S2 sin(t + 1)
h[n]. Given that, y[1] = 3 and y[2] = 4, the value
sin(t ) S3 sin(2t)
of the expression (10 y[3] + y[4]) is ________ .
[EC-2017 : 2 Marks] sin(t ) S4
2
sin (t)
ELECTRICAL EN GINEERIN G t
(a) s (t ) u( ) d
(GATE Previous Years Solved Papers) 0
(b) F must be a ‘sine’ or ‘cosine’ function with Q.13 A linear time invariant system with an impulse
a1 = a2. response h(t) produces output y(t) when input
(c) F must be a ‘sine’ function with 1 = 2 and x(t) is applied. When the input x(t – ) is applied
1 = 2. to a system with impulse response h(t – ), the
(d) F must be a ‘sine’ or ‘cosine’ function with output will be
1 = 2. (a) y( ) (b) y(2(t – ))
[EE-2007 : 1 Mark] (c) y(t – ) (d) y(t – 2 )
Q.10 The impulse response of a causal linear time- [EE-2009 : 1 Mark]
invariant system is given as h(t). Now consider
Q.14 A cascade of three linear time invariant systems
the following two statements:
is causal and unstable. From this, we concludes
Statement (I) : Principle of superposition holds.
that
Statement (II) : h(t) = 0 for t < 0.
(a) each system in the cascade is individually
(a) Statement (I) is correct and statement (II) is
causal and unstable.
wrong.
(b) Statement (II) is correct and statement (I) is (b) at least one system is unstable and at least
wrong. one system is causal.
(c) Both statement (I) and statement (II) are (c) at least one system is causal and all systems
wrong. are unstable.
(d) Both statement (I) and statement (II) are (d) the majority are unstable and the majority
correct. are causal.
[EE-2008 : 1 Mark] [EE-2009 : 2 Marks]
Q.11 A signal e– t sin ( t) is the input to a real linear Q.15 The system represented by the input-output
time invariant system. Given K and are
5t
constants, the output of the system will be of the
relationship y(t ) = x( ) d , t > 0 is
from Ke– t sin(vt + ) where
(a) need not be equal to but v equal to .
(b) V need not be equal to but equal to . (a) linear and causal
(c) equal to and v equal to . (b) linear but not causal
(d) need not be equal to and v need not to be (c) causal but not linear
equal to . (d) neither linear nor causal
[EE-2008 : 1 Mark] [EE-2010 : 1 Mark]
Q.12 A system with x(t) and output y(t) is defined by Q.16 Given the finite length input x[n] and the
the input-output relation: corresponding finite length output y[n] of an
2t LTI system as shown below, the impulse
Y (t ) = x( t ) d response h[n] of the system is
Q.17 Given two continuous time signals x(t) = e–t and Q.22 The impulse response of a continuous time
y(t) = e–2t which exist for t > 0, the convolution system is given by
z(t) = x(t) y(t) is h(t) = (t – 1) + (t – 3)
(a) e–t – e–2t (b) e–3t The value of the step response at t = 2 is
(c) e +t (d) e–t + e–2t (a) 0 (b) 1
[EE-2011 : 1 Mark] (c) 2 (d) 3
Q.18 Let y[n] denote the convolution of h[n] and g[n], [EE-2013 : 2 Marks]
where h[n] = (1/2)n u[n] and g[n] is a causal
Q.23 x(t) is non-zero only for Tx < t < Tx , and
sequence. If y[n] = 1 and y[1] = 1/2, then g[1]
equals similarly, y(t) is non-zero only for Ty < t < Ty .
(a) 0 (b) 1/2
Let z(t) be convolution of x(t) and y(t). Which
(c) 1 (d) 3/2
one of the following statements is true?
[EE-2012 : 2 Marks]
(a) z(t) can be non-zero over an unbounded
Q.19 The input x(t) and output y(t) of a system are interval.
related as, (b) z(t) is non-zero for t < Tx + Ty .
t
(c) z(t) is zero outside of Tx + Ty < t < Tx + Ty .
y (t ) = x( ) cos(3 ) d
Q.26 A moving average function is given by Q.30 Consider a causal LTI system characterized by
t differential equation,
1
y( t ) = u( ) d
T dy(t ) 1
t T + y(t ) = 3x(t )
dt 6
If the input ‘u’ is a sinusoidal signal of frequency
The response of the system to the input
1 x(t) = 3e–t/3 u(t), where u(t) denotes the unit step
Hz, then the steady-state, the output ‘y’ will
2T function, is
lag ‘u’ (in degree) by _______ . (a) 9 e–t/3 u(t)
[EE-2015 : 1 Mark] (b) 9 e–t/6 u(t)
(c) 9 e–t/3 u(t) – 6 e–t/6 u(t)
Q.27 For linear time invariant systems, that are (d) 54 e–t/6 u(t) – 54 e–t/3 u(t)
bounded input bounded output stable, which
[EE-2016 : 1 Mark]
one of the following statement is true?
(a) The impulse response will be integrable, but Q.31 Let z(t) = x(t) y(t), where ‘ ’ denotes
may not be absolutely integrable. convolution. Let c be a positive real-valued
(b) The unit impulse response will have finite constant. Choose the correct expression for z(ct).
support. (a) c x(ct) y(t) (b) x(ct) y(ct)
(c) The unit step response will be bounded. (c) c x(ct) y(ct) (d) c x(ct) y(t)
(d) The unit step response will be bounded. [EE-2017 : 1 Mark]
[EE-2015 : 2 Marks] Q.32 A continuous-time input signal x(t) is an eigen
Q.28 Consider a continuous-time system will input function of an LTI system, if the output is
x(t) and output y(t) given by (a) kx(t), where k is an eigen value.
y(t) = x(t) cos(t) (b) ke j t x(t), where k is an eigen value and e j t
The system is is a complex exponential signal.
(c) x(t) ej t, where e j t is a complex exponential
(a) linear and time-invariant.
signal.
(b) non-linear and time-invariant.
(d) k H( ), where k is an eigen value and H( ) is
(c) linear and time-varying
a frequency response of the system.
(d) non-linear and time-varying.
[EE-2018 : 1 Mark]
[EE-2016 : 1 Mark]
Q.33 Suppose for input x(t) a linear time-invariant
Q.29 The output of a continuous-time, linear time-
system with impulse response h(t) produces
invariant system is denoted by T[x(t)] where x(t)
output y(t), so that x(t) h(t) = y(t). Further, if
is the input signal. A signal z(t) is called eigen
signal of the system T, when T[z(t)] = yz(t), where x(t ) h(t ) = z(t ), which of the following
y is a complex number, in general, and is called
statements is true?
an eigen value of T. Suppose the impulse
(a) For some but not all t (– , ), z(t) y(t)
response of the system T is real and even. Which
of the following statements is true? (b) For all t (– , ), z(t) y(t)
(a) cos(t) is an eigen-signal but sin(t) is not. (c) For all t (– , ), z(t) y(t)
(b) cos(t) and sin(t) are both eigen-signals but (d) For some but not all t (– , ), z(t) y(t)
with different eigen values. [EE-2020 : 2 Marks]
(c) sin(t) is an eigen-signal but cos(t) is not.
(d) cos(t) and sin(t) are both eigen-signals with
identical eigen values.
[EE-2016 : 2 Marks]
GATE Previous Years Solved Paper 19
Answers
EC LTI Systems Continuous and Discrete (Time Domain)
9. (d) 10. (d) 11. (b) 12. (a) 13. (c) 14. (10) 15. (d) 16. (b)
17. (c) 18. (31) 19. (7) 20. (c) 21. (0) 22. (c, d)
Solutions
EC LTI Systems Continuous and Discrete (Time Domain)
1. (b) 2
3. (b)
–4 0 2
Given that:
Impulse response = h(t) = u(t)
x( )
So, transfer function,
1
H(s) =
s
1/2
Y (s )
H(s) =
2 X( s )
Y(s) = H(s) × H(s)
20 Electronics Engineering Signals & Systems
1 = 10 + 5 = 15 <
[1 e 2 s ]
u(t) – u(t – 2) =
s For bounded input, bounded output. So system
Convolution in the domain = Multiplication in is stable.
s-domain Response depends on future value of input
1 signal i.e., u(n + 3). So, system is not causal.
[1 e s ] [1 e 2s
]
s2 8. (b)
1 2s s 3s For a causal system,
= [1 e e +e ]
s2 h(t) = 0 ; for t < 0
= tu(t) – (t – 1) u(t – 1) – (t – 2) u(t – 2) + (t – 3)
9. (d)
u(t – 3)
h(t) = e t u(t) + e t u(–t)
= r(t) – r(t – 1) – r(t – 2) + r(t – 3)
h[–k]
y[n] = x[ k ] h[n k ]
k= 1/2 1
1/4
y[2] = x[ k ] h[2 k ]
k=
y(2) = 3
x [k ] h[k] y[0] = h [ k ] g[ k ]
k=
1 1 2
y[0] = h[0] g[0]
1
1 = 1 g[0]
k k g[0] = 1
0 1 2 0 1 2
–1
y[1] = h [1 k ] g[ k ]
k=
h[–k] h[2 – k]
y[1] = h[1] g[0] + h[0] g[1]
2 2
h[1 – k] will be zero for k > 1 and g[k] will be
1 1
zero. For k < 0 as it is causal sequence,
–1
k k 1 1
–2 0 0 1 2
= × 1 + 1 g[1]
–1 –1 2 2
g[1] = 0
11. (b)
13. (c)
h(n) = 2n u(n – 2)
The overall impulse response h(t) of the
For causal system,
cascaded system is given by
h(n) = 0 ; for n < 0
h(t) = h1(t) h2(t)
Hence given system is causal.
For stability: 14. Sol.
n ; for 0 n 10
2n = x[n] =
n=2 0; otherwise
n 10
1 x( k ) x(4 k )
h[n] = u [ n] y[4] =
2 k=0
g[n] = ?? = x(0) x(4) + x(1) x(3) + x(2) + x(3)
x(1) + 0
g(0) g(1)
= 0 + (1 × 3) + (2 × 2) + (3 × 1)
= 10
15. (d)
x(–t) (–t – t0) = x(–t) (t + t0)
y[n] = h [n k ] g[ k ] = x(–t – t0)
k=
22 Electronics Engineering Signals & Systems
d
h(t) = y (t ) –2 –1 0 2
dt t(sec)
17. (c)
–1
If the input to the system is eigen signal output
is also the same eigen signal. The energy of y(t) can be given as,
18. Sol.
Ey = y 2 (t ) dt
x[n] = {1, 2, 1}
h[n] = {1, a, b} By plotting y2(t), we get
y[n] = {A, 3, 4, B, C}
y2(t)
h
x 1 a b 4
1 1 a b
1
2 2 2a 2b
–2 –1 0 2 t(sec)
1 1 a b
22. (c, d)
2z 1 z 2
Y(z) = X ( z) H ( z) =
1 1 sin t S1 sin(–t) = –sin t
1 z
2
sin t S2 sin(t + 1)
y(n) = x(n) h(n)
n+1 n sin t S3 sin(2t)
1 1
= 2 u(n + 1) u(n)
2 2 1 cos 2 t
sin t S4 sin 2 (t ) =
2
n 2
1 Since, LTI system does not change the frequency
u(n 2)
2 of sinusoidal input. So, S3 and S4 are definitely
As we want y(0), it is due to first 2 terms of y(n), not LTI as input and output sinusoidal
1 0+1
1 0 frequencies are different.
y(0) = 2
2 2
= 1–1=0
Answers
EE LTI Systems Continuous and Discrete (Time Domain)
11. (c) 12. (d) 13. (d) 14. (b) 15. (b) 16. (c) 17. (a) 18. (a)
19. (d) 20. (c) 21. (c) 22. (b) 23. (c) 24. (b) 25. (d) 26. (90)
27. (d) 28. (c) 29. (d) 30. (d) 31. (a) 32. (a) 33. (b)
Solutions
EE LTI Systems Continuous and Discrete (Time Domain)
1. (a) 2. Sol.
y(t) = u(t) h(t) (always) d
f (t )
where h(t) is impulse response dt
Q s(t) is step response (given)
3. Sol.
d
s(t ) = h(t) Q f1(t) = e–2t u(t)
dt
d 1
F1(s) =
y(t) = u(t ) s(t ) s+2
dt
d and f2(t) = et u(t)
= [u(t ) s(t )] (Using property)
dt 1
F2(s) =
s 1
d
= u( ) s(t )d
dt 1
F1(s) F2(s) =
(s + 2) (s 1)
(By definition of convolution)
t 1/3 1/3
d = +
= u( ) s(t )d s+2 s 1
dt
0 Q F1(s) F2(s) = f1(t) f2(t)
(Q u(t) and s(t) are causal functions)
24 Electronics Engineering Signals & Systems
11. (c)
e at j H( + j 0 ) j 0t
= H( +j 0 ) [e e
t LTI system t 2j
e sin( ot ) Ke sin( vt + )
h(t ) = real signal
j H( +j 0) j 0t
For real h(t): e e ]
h(t) = h (t) = Ke– t sin(vt + )
Applying Laplace transform,
12. (d)
H(s) = H (s )
H(s + j ) = H ( – j ) [Put s = + j ] First of all we will check for causality,
= 0, = –a 2t
y(t) = x( ) d
H(– + j 0) = H (– – j 0)
So for, t = –2
+ j 0)
H( + j 0 ) e j H(
4
y(–2) = x( ) d
j H( j 0)
= H( j 0) e
So output depends on future values of input
By comparison,
along with past and present values of input so
H( +j 0) = H( j 0) ...(i) system is non-causal.
and H(– + j 0) = – H(– – j 0) ...(ii) Let us find output for shifted input x(t – t0),
Now system input is, 2t
y (t) = x( t0 ) d
x(t) = e– t sin 0t
(2 t t0 )
1 t y (t) = x( ) d ...(i)
= e ( e j 0t e j 0t
)
2j
Now shift the output by t0
1 t( + j 0) (2 t t0 )
= e et ( j 0 )
then, y(t – t0) = x( ) d ...(ii)
2
1 so from equations (i) and (ii),
= [ x1 (t ) x2 (t )] y (t) y(t – t0)
2j
Therefore system is time variant.
+ j 0)
where, x1(t) = et ( Non-causal and time variant is present only in
t( j 0)
option (d).
and x2(t) = e
For x1(t) system output is, 13. (d)
Case-1 : Y(s) = H(s) X(s)
y1(t) = H ( s ) s = j 0
e( j 0 )t
Case-2 : Input = x(t – ) X(s) e–s
= H( j 0) e( j 0 )t Impulse response = h(t – ) H(s) e–s
Thus, the overall output y(t) is, Output : Y (s) = X(s) e–s H(s) e–s
Y (s) = X(s) H(s) e–s2t = Y(s) e–2sT
1
y(t) = [ y1 (t ) y2 (t )] y(t) = y(t – 2 )
2j
[Q By using property of linear system] 14. (b)
1
[H( + j 0 ) e( + j 0 )t
H( j 0 ) e( j 0 )t
] Since in cascade overall impulse response,
= 2j
h(t) = h1(t) h2(t) h3(t)
e at h 1 (t), h 2 (t), h 3 (t) are impulse response of
+ j 0)
= [ H( +j 0 ej H(
ej 0t
individual systems.
2j
Since initial point where h(t) is non-zero is t 0
H( j 0 ) e j H( j 0)
e j 0t ] and since in convolution initial point,
= t1 + t2 + t3
26 Electronics Engineering Signals & Systems
where, t1, t2, t3 are initial points of h1(t), h2(t), 17. (a)
h3(t) respectively. 1
1
So for it to be greater than or equal to zero at x(s) = , y( s ) =
s+1 s+2
least one of them t1, t2 or t3 must be +ve i.e. greater
z(s) = x(s) y(s)
than zero so atleast one of them must be causal.
1 1 1 1
Similarly if one (atleast) of the system become = × =
s+1 s+2 s+1 s+2
unstable then overall system will become
z(t) = e–t – e–2t
unstable.
18. (a)
15. (b)
Given, g[n] is a causal sequence.
Integrator is always a linear system.
g[n] will be zero for n < 0,
5t
Since, y(t) = x( ) d t>0
y[n] = g[ k ] h[n k ]
For t = 1 k=
5 n
y(t) = x( ) d 1
and h[n] = u [ n]
2
here value at t = 1 depends on future values like
at t = 2, 3, .... of input x(t). n
1
u[n]
So, it is a non-causal system. h[n] = 2
0 n<0
16. (c)
1 1
x[n] = {1, 1}, M = 2 h[0] = 1, h [1] = , h [2] =
2 4
y[0] = g[0] h[0] + g[1] h[–1] + 1...
y[n] = {1, 0, 0, 0, 1}, N 1 = 5 1 = g[0] × 1 + 0 + 0 + ...
g[0] = 1
Since output has number of elements, y[1] = g[0] h[1] + g[1] h[0] + g[2] h[–1] +...
N1 = M + N – 1 1 1
= 1 + g[1] 1 + 0
where N is number of elements in impulse 2 2
response h[n]. g[1] = 0
5 = 2+N–1
19. (d)
N=4
t
Let it be a1, a2, b1, b2 y = x( ) cos(3 ) d
y[n] = [ a1 ,( a2 a1 ), (b1 a2 ), (b2 b1 ), b2 ] t t0
y(t – t0) = x( ) cos(3 ) d
comparing with,
y (t) for input x(t – t0) is
y[n] = [1, 0, 0, 0, 1] t
y (t) = x( t0 ) cos 3 d
a1 = 1
( t t0 )
a2 = a1 = 1 y (t) = x( ) cos 3( + t0 ) d
b1 = a1 = 1
y (t) y(t – t0) so system is not time invariant for
b2 = b1 = 1
input x( ) = cos(3 ) bounded input,
Therefore,
t
y(t) = cos2 (3 ) d as t
h[n] = {1, 1, 1, 1}
So, for bounded input, output is not bounded
therefore system is not stable.
GATE Previous Years Solved Paper 27
22. (b)
t
For step response, impulse response can be 1
0 1 2
integrated.
Maximum value = 1
y(t) = u(t – 1) + u(t – 3)
y(2) = u(1) + u(–1) 26. Sol.
= 1+0=1 System input: sin 0t
23. (c)
1
f0 = Hz
2T
x(t) is non-zero for Tx < t < Tx and y(t) is non- Therefore,
j ot LTI j ot
31. (a)
e H(j o) e
system Time scaling property of convolution.
If, x(t) y(t) = z(t)
–j o t LTI –j o t
e H(–j o) e 1
system
Then, x(ct) y(ct) = z(ct )
c
Since, H(j ) is real and even. z(ct) = c × x(ct) y(ct)
Thus, H(j 0) = H(–j 0)
32. (a)
e jt + e jt
Now cos(t) is input i.e. is input/ Eigen function is a type of input for which output
2
is constant times of input.
output will be
i.e.,
H ( j 1) e jt + H ( j 1) e jt e jt + e jt
= H ( j 1)
at
e = x(t) H(s) y(t )
2 2
= H(j1) cos(t) where, x(t) = system input = eigen function
H(s) = transfer function of system
e jt e jt y(t) = system output
If sin(t) is input i.e. is input/output
2
Here, y(t) = H ( s ) s = a e at
will be
= K x(t)
H ( j 1) e jt + H ( j 1) e jt e jt + e jt
= H ( j 1) 2j
where, K = eigen value = H (s) s = a
2
= H(j1) sint x(t) = eigen function input = H (s) s = a
So, sin(t) and cos(t) are eigen signals with same
eigen values.
GATE Previous Years Solved Paper 29
Case-1:
t t
0 1 0 1
x(t ) h(t )
1
then, y(t) = z(t)
0 1
t t
0 1
–1
1
t
–1 0 1 2
3 Fourier Series
The magnitudes of the nth Fourier series Q.12 The Fourier series of a real periodic function
coefficients of W1 and W2, for n 1, n odd, are has only
respectively proportional to P. Cosine terms if it is even.
Q. Sine terms if it is even.
R. Cosine terms if it is odd.
1 1
S. Sine terms if it is odd.
W1 W2 Which of the above statements are correct?
T (a) P and S (b) P and R
0 T/2 T 0 T/2
(c) Q and S (d) Q and R
[EC-2009 : 1 Mark]
–1 –1
Q.13 The trigonometric Fourier series of an even
function does not have the
(a) n 3 and n 2 (b) n 2 and n 3 (a) dc term (b) cosine terms
(c) sine terms (d) odd harmonic terms
1 2 4 2
(c) n and n (d) n and n [EC-2011 : 1 Mark]
[EC-2000 : 2 Marks] Q.14 Consider the periodic square wave in the figure
shown.
Q.9 Which of the following cannot be the Fourier
x(t)
series expansion of a periodic signal?
(a) x(t) = 2 cost + 3 cos3t 1
(d) 1 1
[EC-2005 : 1 Mark] k
–5 –4 –3 –2 –1 0 1 2 3 4
32 Electronics Engineering Signals & Systems
Q.17 Let x(t) be a continuous time periodic signal with I. x(t) is real and even, having a fundamental
fundamental period T = 1 seconds. Let {ak} be period of 6.
the complex Fourier series coefficients of x(t), II. The average value of x(t) is 2.
where k is integer valued. Consider the k, 1 k 3
following statements about x(3t): III. ak =
0, k>3
I. The complex Fourier series coefficients of
x(3t) are {ak} where k is integer valued. The average power of the signal x(t) (Rounded
off to one decimal place) is ______ .
II. The complex Fourier series coefficients of
x(3t) are {3ak} where k is integer valued. [EC-2021 : 2 Marks]
III. The fundamental angular frequency of x(3t) Q.20 The frequency response H(f) of a linear time
is 6 rad/s. invariant system has magnitude as shown in
For the three statements above, which one of the the figure.
following is correct?
|H(f )|
(a) Only II and III are true.
1
(b) Only I and III are true.
(c) Only III is true. f (Hz)
– 0
(d) Only I is true. [EC-2017 : 2 Marks]
GATE Previous Years Solved Paper 33
Statement-I : The system is necessarily a pure Q.3 Fourier series for the waveform, f(t) shown in
delay system for inputs which are band limited figure is
to – f .
f (t )
Statement-II : For any wide sense stationary
input process with power spectral density SX(f),
the output power spectral density SY(f) obeys
–1 1 2 3
SY(f ) = SX(f) for – f . Which one of the t
following combinations is true? –1
(a) Statement I is correct, Statement II is correct.
(b) Statement I is correct, Statement II is
8 1 1
incorrect. (a) 2
sin( t ) + sin(3 t ) + sin(5 t ) + ...
9 25
(c) Statement I is incorrect, Statement II is
correct. 8 1 1
(b) 2
sin( t ) cos(3 t ) + sin(5 t ) + ...
(d) Statement I is incorrect, Statement II is 9 25
incorrect.
8 1 1
[EC-2022] (c) 2
cos( t ) + cos(3 t ) + cos(5 t ) + ...
9 25
ELECTRICAL EN GINEERIN G 8 1 1
(d) 2
cos( t ) sin(3 t ) + sin(5 t ) + ...
(GATE Previous Years Solved Papers) 9 25
[EE-2002 : 1 Mark]
Q.1 A periodic rectangular signal, x(t) has the
waveform as shown in figure. Frequency of the Q.4 The rms value of the periodic waveform given
fifth harmonic of its spectrum is in figure is
x(t)
I
+6 A
T
t
–4 –2 0 2 4 t(ms) T/2
–6 A
(d) all the three measures (peak, rms and (a) 14.1 A (b) 17.3 A
average values) (c) 22.4 A (d) 30.0 A
[EE-2000 : 1 Mark] [EE-2004 : 2 Marks]
34 Electronics Engineering Signals & Systems
Q.6 For the triangular wave form shown in the Q.10 Let x(t) be a periodic signal with time period T.
figure, the rms value of the voltage is equal to Let, y(t) = x(t – t0) + x(t + t0) for some t0. The
V(t) Fourier series coefficients of y(t) are denoted by
bk. If bk = 0 for all odd K. Then t0 canbe equal to
1V
T T
(a) (b)
8 4
T/2 T 3T/2 2T
t T
(c) (d) 2T
2
1 1 [EE-2008 : 2 Marks]
(a) V (b) V
6 3
Q.11 The Fourier series coefficients, of a periodic
1 2 signal x(t) expressed as,
(c) V (d) V
3 3
x(t) = k=
ak e j 2 kt /T
[EE-2004 : 2 Marks]
are given by
Q.7 The Fourier series for the function f(x) = sin2x is a –2 = 2 – j1
(a) sinx + sin2x (b) 1 – cos2x a –1 = 0.5 + j0.2
(c) sin2x + cos2x (d) 0.5 – 0.5 cos2x a0 = j2
[EE-2005 : 2 Marks] a1 = 0.5 – j0.2
a2 = 2 + j1
Q.8 x(t) is real valued function of a real variable with
period T. Its trigonometric Fourier series and ak = 0 for k > 2
expansion contains no terms of frequency Which of the following is true?
= 2 (2k)/T, k = 0, 1, 2, ..... Also, no sine terms (a) x(t) has finite energy because only finitely
are present. Then x(t) satisfies the equation many coefficients are non-zero.
(a) x(t) = –x(t – T)
(b) x(t) has zero average value because it is
(b) x(t) = x(T – t) = –x(t) periodic.
T (c) The imaginary part of x(t) is constant.
(c) x(t ) = x(T t ) = x t
2 (d) The real part of x(t) is even.
T [EE-2009 : 2 Marks]
(d) x(t ) = x(t T ) = x t
2
Q.12 The second harmonic component of the periodic
[EE-2006 : 1 Mark]
waveform given in the figure has an amplitude
Q.9 A signal x(t) is given by of
T 3T
1, <t
4 4
x( t ) = +1
3T 7T
1, <t
4 4 t
T/2 T
Which among the following gives the
fundamental Fourier term of x(t)? –1
4 t t
(a) cos (b) cos + (a) 0 (b) 1
T 4 4 2T 4
2
4 t t (c) (d) 5
(c) sin (d) sin
T 4 4 2T 4
[EE-2010 : 1 Mark]
[EE-2007 : 2 Marks]
GATE Previous Years Solved Paper 35
A sin t , 0 t
t R. Here t represents the largest integer less f (t ) =
0, <t<2
than or equal to t and t denotes the smallest The Fourier series coefficients a1 and b1 of f(t)
integer greater than or equal to t. The coefficient are:
of the second harmonic component of the A A
(a) a1 = 0 ; b1 = (b) a1 = ; b1 = 0
Fourier series representing g(t) is _______ .
[EE-2017 : 1 Mark] A A
(c) a1 = 0 ; b1 = (d) a1 = ; b1 = 0
2 2
Q.21 A periodic function f(t), with a period of 2 , is
[EE-2019 : 2 Marks]
represented as its Fourier series.
Answers
EC Fourier Series
9. (b) 10. (d) 11. (c) 12. (a) 13. (c) 14. (0.51) 15. (a) 16. (a)
Solutions
EC Fourier Series
1 2. Sol.
a0 = v(t ) dt
To f(x)
To
To /4
1
= Vm cos( o t ) dt
To
To /4 x
–
To /4
1 Vm [sin o t ] To /4 Time period = T = – ( ) = 2
a0 = At the point of discontinuity,
To o
x =
Vm 2 To 2 To
a0 = sin sin f(x) expressed in Fourier series converge to the
2 To 4 To 4
To media value = /2. From the given trigonometric
To
form of Fourier series.
Vm
a0 = sin sin At, x =
2 2 2
2
f( ) = + s=
Vm V 4 2
= [1 ( 1)] = m × 2
2 2 1 1
where, s = 1+ 2
+ + ....
Vm 3 52
a0 =
2
s = =
Vm 10 2 4 4
So, average value = a0 = = V
2
s=
2 8
a1 = v(t ) cos( o t ) dt
To
To 3. (d)
To /4 The Fourier series of an odd periodic function
2
a1 = Vm cos( o t ) cos( o t ) dt does not contain the dc term (ao = 0) and cosine
To
To /4 terms. The Fourier series of an odd periodic
function contains only same terms.
To /4
2
a1 = Vm cos 2 ( o t ) dt 4. (c)
To
To /4
The trigonometric Fourier series of an even
To /4 function of time contains only dc term and
2Vm (1 + cos 2 ot)
a1 = dt cosine term. The trigonometric Fourier series of
To 2
To /4 an even function of time does not contain sine
terms.
To /4 To /4
2Vm
a1 = dt + cos 2 ot dt 5. (c)
To
To /4 To /4
The trigonometric Fourier series of a periodic
Vm To To V T time function can have only cosine and sine
a1 = × = m× o terms.
To 4 4 To 2
Vm 6. (c)
a1 =
2 x( t)
Vm = 10
10 1
So, a1 = =5V
2 t
–To/2 –T1 T1 To/2
38 Electronics Engineering Signals & Systems
T
1 1 1 T1
= 1 dt = [t ] T 1
To To 1
T1 Cn
n2
1 2T
xdc = [Tt1 ( T1 )] = 1 9. (b)
To To
x(t) = 2 cos t + 7 cost
7. (d) 2
T1 = =2
s(t) = c k e jk ot
2
k= T2 = =2
1
To /2 T1 1
1 jk ot 1 = = irrational
ck = (t ) e dt = T2
To To
To /2
x(t) is not periodic and does not satisfy
1 Dirchlet condition.
s(t) = e jk ot
To k= 10. (d)
8. (c) c–k = c k
For impulse train the Fourier series coefficient c3 = 3 + j5
are: c–3 = c 3 = 3 j5
11. (c)
All other functions are either periodic or
constant function.
12. (a)
1 The Fourier series of a real periodic function
Cn =
Ts
has only cosine terms if it is even and only sine
terms if it is odd.
13. (c)
Trigonometric Fourier series of an even function
has dc and cosine terms only.
14. Sol.
A sin n o /2
Cn = x(t )
T n o /2
1
2A
= sin n o
Tn o 2
t
0 1 2 3 4
1
Cn
n
–1
GATE Previous Years Solved Paper 39
18. (c)
1
Change in only time period or frequency does
not change in the value of Fourier series f (Hz)
– 0
coefficients.
So, bk = ak Based on the magnitude response given,
statement (I) is correct.
bk = ak = 16 Note : Phase response of the system is not given
k= k= in the question without knowing phase
response of the system we can not comment
19. (32)
about exact nature of the system,
From II, a0 = 2
2
From III, a 1 = 1, a2 = 2, a3 = 3 (PSD)output = ( PSD)input H ( f )
From I, since x(t) is real and even ak = a–k SY(f) = SX(f ); – f
a 1 = a–1 = 1 Statement (II) is correct).
and a 2 = a–2 = 2 Hence option (a) is correct.
and a 3 = a–3 = 3
40 Electronics Engineering Signals & Systems
Answers
EE Fourier Series
9. (a) 10. (b) 11. (c) 12. (a) 13. (d) 14. (a) 15. (0.5) 16. (b)
Solutions
EE Fourier Series
1. (d) 5. (b)
1 Rms value of d.c. current = 10 A
Q Fundamental frequency = Hz
4 × 10 3 Rms value of alternating current
5 20
= = 10 2 A
Frequency of 5th harmonic = 3 2
4 × 10
= 1250 Hz Rms value of resultant current
= 102 + (10 2 )2 A
3. (c)
Q f(t) is an even function with half wave = 17.32 A
symmetry. 6. (a)
d.c. term as well as sine terms = 0
From the wave symmetry,
Only the cosine terms with odd harmonics will
1/2
be present. T /2 T
1 2t 2
Option (c) is correct. Vrms = dt + 0 dt
T T
0 T /2
4. (a)
T /2
1 /2 2 1 4t 2 4 T3 1
1
T Vrms = = =
Irms = i 2 (t ) T
0 T2 3T 3 8 6
T
0
1
T T
Vrms = V
2 6
1 12t
2
I rms = dt + 6 2 dt
T T
0 T /2 7. (d)
f(n) = sin 2x
T /2 2 T
1 144(t ) 36 For finding the Fourier series expansion,
= 2
dt + dt
T T T
0 T /2 2 1 cos 2 x
f(x) = sin x =
2
T /2
144 t 3 36 T = 0.5 – 0.5 cos2x
= +
T3 3 0
T 2
8. (c)
144 36 Since trigonometric Fourier series has no sine
= + = 24
8× 3 2 terms and has only cosine terms therefore this
will be an even signal i.e. it will satisfy,
Irms = 2 6 A
x(t) = x(–t)
GATE Previous Years Solved Paper 41
or we can write, 1
C1 = [2 e j /4 + 2 e j /4 ]
x(t – T) = x(–t + T) j2
But signal is periodic with period T.
2 j /4 2 j /4 2 1 j
Therefore, C1 = e = e =
j 2 2
x(t – T) = x(t)
Therefore, Comparing it with
x(t) = x(T – t) ...(i) a1 jb1
C1 =
Now since signal contains only odd harmonics 2 2
i.e. no terms of frequency, 4 4
a1 = , b1 =
2 ×2k 2 2
=
; k = 0, 1, 2, 3, 4
T Fundamental Fourier term will be
i.e. no even harmonics. = a1 cos 0t + b1 sin 0t
This means signal contains half wave symmetry 4 4
this implies that, = cos t + sin t
2 T 2 T
T
x(t) = x t ...(ii) 4
2 = cos t
T 4
From equations (i) add (ii),
T 10. (b)
x(t) = x(T t ) = x t
2 y(t) = x(t – t0) + x(t + x0)
9. (a) Since, x(t) is periodic with period T.
Therefore, x(t – t0) and x(t + t0) will also be
According to definition of signal given in
periodic with period T.
question the x(t) will be as,
jk 0t0
bk = ak e + ak e jk 0t0
x(t )
(By property)
1
ak is Fourier series coefficient of signal x(t).
i.e., k 0t0 = k
So, it is periodic with period, 2
where, k = ±1, ±3, ±5....
7T T
T0 = = 2T
4 4
0t0 =
2
Fundamental angular frequency,
2 2 T T
= = t0 = ×
=
0 = 2 2 4
T0 2T T
Now, 11. (c)
C1 = (exponential series coefficient for k = 1)
j 2 0t
x(t) = a 2 e + a 1 e j 0t + a0
1 j 0t
C1 = x (t ) e dt
T0
T0
+ a1 e j 0t + a2 e j 2 0t
j 2 0t
1 3T /4 j 0t 7T /4 j 0t
= (2 j) e + (2 + j ) e j 2 0t
C1 = e dt + 1e dt
T0 T /4 3T /4
+ (0.5 + j 0.2) e j 0t + (0.5 j0.2) e j 0t + 2 j
42 Electronics Engineering Signals & Systems
j 2 0t
+ e j 2 0t ) + j [ e j 2 0t e j 2 0t ] Then function g(x) will be
= 2 (e
+ 0.5( e j 0t +e j 0t
) j 0.2 ( e j 0t e j 0t
)+2j g (x )
1 t
t
1
15. Sol.
Given function, x
g(x) = x – [x]
where [x] is a integer part of x.
GATE Previous Years Solved Paper 43
T0 /2
4 4
So, sgn (cost) is a rectangular signal which is = (t ) dt = = 4000
T0 T0
even and has half wave symmetry. 0
So, Fourier series will have only cosine terms Now, frequency components available in
with odd harmonics only. expansion are:
0, 3 0,.....
18. (b)
2000 , 6000 , .....
Given that, f(–x) = –f(x) As, LTI system given in the question will pass
So, function in an odd function. upto 5000 rad/sec frequency component of
So the Fourier series will have sine term only so, input.
So, output will have only one component of
f(x) = bx sin( kx )
frequency 2000 rad/sec.
k=1
Thus, y(t) = expansion of output
19. (c) = a1 cos 0t
= 4000 cos2000 t
K
x(t) = ( 1)K t
k= 2000 20. Sol.
t t , t 0
K Given that, g(t) =
= ( 1) (t KT ) t t , otherwise
k=
where,
1
where, T= t = greatest integer less than or equal to ‘t’.
2000
x(t) t = smallest integer greater than or equal to ‘t’.
Now,
–T T 3T 1
0 2T t 0 t<0
1
g(t ) t t g(t ) t t
Time period: t–0 0, 1 0 t+0 –1, 0 0
g(t) A A
= 2 2 sin 2 t dt = [1 cos 2t ] dt
2
1 2 3 0 0
– – –
t
–4 –3 –2 –1
t A sin 2t
0 4 3 2 1 = t
+
3
+
2
+
1 2 2 0
t
t
A A
Since, g(t) is non-periodic. So there is no Fourier = [( 0) (0 0)] =
2 2
series expansion of this signal and hence no
T
need to calculate harmonic here. 2 0
a1 = f (t ) cos 0 t dt
T0
0
21. (c)
2
2 2
T0 = 2 0 = =1 = f (t ) cos t dt
T0 2
0
T0
2 1
Now, b1 = f (t ) sin 0t dt = A sin t cos t dt
T0
0 0
2
2 A
= f (t ) sin t dt [Q = sin 2t dt = 0
2 0 = 1] 2
0 0
1
= A sin t sin dt
0
4 Fourier Transforms, Frequency
Response and Correlation
ELECTRO NICS EN GINEERIN G List-II
(a) Linear Constant Q.6 The function f(t) has the Fourier transform g( ).
(b) Constant Constant
(c) Constant Linear The Fourier transform of g(t ) = g(t ) e j t
dt
(d) Linear Linear
[EC-1990 : 2 Marks] is
Q.3 If G(f ) represents the Fourier’s transform of a 1 1
(a) f( ) (b) f( )
signal g(t) which is real and odd symmetric in 2 2
time, then (c) 2 f (– ) (d) none of these
(a) G(f ) is complex. [EC-1997 : 1 Mark]
(b) G(f ) is imaginary.
Q.7 If the Fourier transform of a deterministic signal
(c) G(f ) is real.
g(t) is G(f ), then
(d) G(f ) is real and non-negative.
1. the Fourier transform of g(t – 2) is
[EC-1992 : 2 Marks]
2. The Fourier transform of g(t/2) is
Q.4 Match each of the items, A, B and C with an (a) G(f) e–j(4 f) (b) G(2f )
appropriate item from 1, 2, 3, 4 and 5. (c) 2G(2f) (d) G(f – 2)
List-I [EC-1997 : 2 Marks]
A. Fourier transform of a Gaussian function
Q.8 The amplitude spectrum of a Gaussian pulse is
B. Convolution of a rectangular pulse with
(a) uniform (b) a sine function
itself
(c) Gaussian (d) an impulse function
C. Current through an inductor for a step input
[EC-1998 : 1 Mark]
voltage
46 Electronics Engineering Signals & Systems
Q.9 The Fourier transform of a function x(t) is X(f ). Q.14 A linear phase channel with phase delay Tp and
The Fourier transform of dx(t)/dt will be group delay Tg must have
dX( f ) (a) Tp = Tg = constant
(a) (b) j2 fX(f)
dt (b) Tp f and Tg f
X( f ) (c) Tp = constant and Tg f
(c) jfX(f ) (d)
jf (d) Tp f and tg = constant (f denotes frequency)
[EC-1998 : 1 Mark] [EC-2002 : 1 Mark]
Q.10 The Fourier transform of a voltage signal x(t) is Q.15 The Fourier transform F{e–t u(t)} is equal to
Q.19 The Fourier transform of a conjugate symmetric Q.23 The output y(t) of a linear time invariant system
function is always is related to its input x(t) by the following
(a) imaginary equation:
(b) conjugate antisymmetric y(t) = 0.5x(t – td + T) + x(t – td) + 0.5x(t – td – T)
(c) real The filter transfer function H( ) of such a system
(d) conjugate symmetric is given by
[EC-2004 : 1 Mark] j td
(a) (1 + cos T ) e
Q.20 A rectangular pulse train s(t) as shown in the (b) (1 + 0.5 cos T ) e j td
figure is convolved with the singal
cos2(4 × 103t). The convolved signal will be a (c) (1 cos T ) e j td
Q.27 The frequency response H( ) of this system in Causal : The system is causal.
terms of angular frequency , is given by H( ) = LP : The system is low pass.
1 LTI : The system is linear and time-invariant.
sin( )
(a) (b) (a) Causal, LP
1 + j2
(b) BIBO, LTI
1 j
(c) (d) (c) BIBO, Causal LTI
2+ j 2+ j
(d) LP, LTI [EC-2009 : 2 Marks]
[EC-2008 : 2 Marks]
Q.31 The Fourier transform of a signal
Q.28 The output of this system, to the sinusoidal input
h(t) is H(j ) = (2 cos ) (sin2 )/
x(t) = 2 cos(2t) for all time t, is
The value of h(0) is
(a) 0
(b) 2–0.25 cos(2t – 0.125 ) 1 1
(a) (b)
4 2
(c) 2–0.5 cos(2t – 0.125 )
(c) 1 (d) 2
(d) 2–0.5 cos(2t – 0.25 )
[EC-2012 : 2 Marks]
[EC-2008 : 2 Marks]
Q.32 A continuous, linear time-invariant filter has
Q.29 A function is given by
an impulse response h(t) described by
f(t) = sin2t + cos2t
Which of the following is true? 3 for 0 t 3
h( t ) =
(a) f has frequency components at 0 and 0 otherwise
1/2 Hz. When a constant input of value 5 is applied to
(b) f has frequency components at 0 and 1/ Hz. this filter, the steady-state output is ______ .
(c) f has frequency components at 1/2 and [EC-2014 : 1 Mark]
1/ Hz.
Q.33 For a function g(t), it is given that,
(d) f has frequency components at 0, 1/2
+
and 1/ Hz. j t 2 2
g(t ) e dt = e
[EC-2009 : 1 Mark]
+
y(t ) = x(t ) h(2 ) d
y(t ) dt _______ .
h (t ) (a) 0 (b) –j
j j
(c) (d)
2 2
t
0 [EC-2014 : 2 Marks]
1 1 f(t)
(a) (b)
4 2 1/2
(c) 1 (d) 2
[EE-2012 : 2 Marks] –T/2
t
–T/2 0
Q.5 A continuous time LTI system with system
function H( ) has the following pole-zero plot. –1/2
For this system, which of the alternatives is true?
The Fourier transform F( ) of f(t) is
(a) real and even function of .
2 (b) real and odd function of .
(c) imaginary and odd function of .
1 (d) imaginary and even function of .
(0, 0) [EE-2014 : 1 Mark]
(a) X( ) and Y( ) are both real. Which one of the following statements is true?
(b) X( ) is real and Y( ) is imaginary. (a) x1(t) and x2(t) are complex and x1(t), x2(t) is
(c) X( ) and Y( ) are both imaginary. also complex with non-zero imaginary part.
(d) X( ) is imaginary and Y( ) is real. (b) x1(t) and x2(t) are real and x1(t), x2(t) is also
[EE-2014 : 2 Marks] real.
(c) x1(t) and x2(t) are complex but x1(t), x2(t) is
Q.10 Consider a signal defined by
real.
e j 10t for t t (d) x1(t) and x2(t) are imaginary but x1(t), x2(t)
x(t ) =
0 for t > 1 is real.
2 sin( 10) sin( 10) Q.12 Suppose the maximum frequency in a brand-
(a) (b) 2 e j 10
10 10 limited signal x(t) is 5 kHz. Then, the maximum
2 sin j 10 2 sin frequency in x(t) cos(2000 t), in kHz is _____ .
(c) (d) e
10 [EE-2016 : 1 Mark]
[EE-2015 : 2 Marks]
X1(j ) equal to
(a) 0 (b) 0.5
1
(c) 1 (d) 2
0.5
[EE-2016 : 2 Marks]
0.3
Q.14 The Fourier transform of a continuous time
signal x(t) is given by
1
–1 0 1 2 X( ) = < <
(10 + j )2
–2 –1 0 2
GATE Previous Years Solved Paper 53
Answers
EC Fourier Transforms, Frequency Response and Correlation
8. (c) 9. (b) 10. (b) 11. (b) 12. (c) 13. (b) 14. (a) 15. (c)
16. (c) 17. (c) 18. (a) 19. (c) 20. (a) 21. (b) 22. (b) 23. (a)
24. (a) 25. (a) 26. (a) 27. (c) 28. (d) 29. (b) 30. (b) 31. (c)
32. (45) 33. (b) 34. (0.2) 35. (c) 36. (d) 37. (0.25) 38. (a) 39. (a)
40. (8) 41. (8) 42. (8) 43. (56.61) 44. (b) 45. (a)
1. (d) 2. (c)
For distortionless transmission,
K (s 2 + 2o )
Given that, H(s) = H ( f ) = constant
s2 + o s + 2o
Q and H(f ) = –kf where k is a constant
S=j So, the magnitude function of a distortionless
filter should be constant.
2
K (0 + o) The phase function of a distortionless filter
H(0) = 2
=K
0+0+ o should be linear.
H(0) K
3. (b)
2
Fourier transform of real and odd symmetric
Ks 2 1 + o
s signal is imaginary and odd function of
H( ) = 2 frequency.
1
s2 1+ o + 2o
Q s s 4. Sol.
(A) – 1,(B) – 3, (C) – 4
K (1 + 0)
H( ) = =K (A) Fourier transform of a Gaussian function is
1+ 0+ 0
H( ) 0 also a Gaussian function,
Here, the given transfer function is a notch filter. t2 F.T. f2
e e
54 Electronics Engineering Signals & Systems
5. (c)
x(t) Volts
Fourier transform of real valued signal has
So, X(f) Volt-sec
conjugate symmetry,
11. (b)
j t Example:
[X(j ) ] = x( t ) e dt
A sin ot = x(t)
(Real and Odd function)
j( )t
X (j ) = x(t ) e dt x( ) = Aj [ ( + o) – ( – o)]
(Imaginary any odd function of )
X (j ) = X(–j )
12. (c)
6. (c)
1 6
According to the duality property of Fourier y(t) = cos(100t 10 )
100
transform,
cos(106t – 1.56)
F.T.
f (t ) g( ) Comparing with,
F.T. y(t) = cos k(t – tg) cos[ c(t – tp)]
g( t ) 2 f( )
1
y(t) = cos[100(t 10 8 )]
7. Sol. 100
1-A, 2-C cos[106 (t – 1.56 × 10–6)]
F.T. tp = 1.56 × 10–6 sec
g( t ) G( f )
tg = 10–8 sec
F.T.
g(t 2) e j 2 2 f G( f ) = G( f ) e j (4 f )
13. (b)
t F.T. 1 f
g G = 2 G(2 f ) Normalized Gaussian function has Gaussian
2 1/2 1/2
Fourier transform.
8. (c) 14. (a)
A normalized Gaussian pulse is defined as, ( ) = – to
t2 ( )
x(t) = e = to
tp =
t2 F.T. f2
x(t) = e e = X( f )
d ( )
tg = = to
t2 d
So, X(f ) = e is also a Gaussian pulse in
tp = tg = to = constant
frequency domain.
GATE Previous Years Solved Paper 55
17. (c)
R
+ +
0 10 kHz 30 kHz
Vi C Vo
So, only at ‘0’, we get output after convolution.
– – (Only odd harmonics are present).
1
H(f ) =
1 + j 2 fRC
H(0) = 1
H ( f1 ) 1
= 0.95 Constant in time domain.
H (0) 1+ 4 2 2 2 2
f1 R C
1 21. (b)
2 2 0.9025
1+ 4 f 1 ( RC )2 y(t) = –x[2(t + 1)]
22. (b) X( ) = 0
2 1 t j 4 t /3 ej e j
=0
X 3 f+ = x e
3 3 3 1
ej =0
Applying scaling and shifting property. ej
e2j – 1 = 0
23. (a)
e2j = 1
y(t) = 0.5x(t – td + T) + 0.5x(t – td – T) + x(t – td) ej = ±1
Taking Fourier transform, = ,2
j ( td + T )
Y( ) = 0.5 e + 0.5 e j ( td T ) + e j td X( )
27 (c)
Y( ) j td h(t) = exp(–2t) u(t)
= e 0.5 e j T + 0.5 e j T + 1
X( )
j t
Y( ) H( ) = h (t ) e dt
j td
= e [cos T + 1]
X( )
2t j t (2 + j )t
H( ) = (1 + cos T ) e j td = e e dt = e dt
0 0
24. (a)
1 (2 + j )t 1
x(t) X(j ) = e =
2+ j 2+ j
j3
3 1 j 5
x 5 t = X e 28. (d)
5 5 5
Input, x(t) = 2 cos(2t)
Using scaling and shifting property.
Frequency response,
25. (a) X( ) = 2 [ ( – 2) + ( + 2)]
1 1
Laplace transform of e t u(t ) = H( ) =
2+ j
s+1
1 Output,
Q magnitude at 3-dB frequency = Y( ) = H( ) X( )
2
1 1 1
= = 2 [ ( 2) + ( + 2)]
2 2 2+ j
1+
= 1 rad 2 2
= ( 2) + ( + 2)
2 + j2 2 j2
1
f= Hz
2
= [ ( 2) + ( + 2)] j [ ( 2) ( + 2)]
2 2
26. (a)
cos 2t sin 2t
y(t) = +
2 2
j t
X( ) = x( t ) e dt
2 1 1
= cos 2t + sin 2t
2 2 2
1 j t 1
j t e
= e dt = 1
j = cos(2t 0.25 )
1 1 2
j
e ej 1 j = 2–0.5 cos(2t – 0.25 )
= = = (e e j )
j j j
GATE Previous Years Solved Paper 57
t
It is not low pass filter. 0 3
But the system is LTI and BIBO.
Q x(t) = 5
31. (c) 5
Then, X(s) =
2 cos sin 2 s
= H(j ) ...(1) We know that,
3s
2 sin 2 1 e 5
H(j ) = 2 cos Y(s) = H (s) X(s ) = 3
2 s s s
= H1(j ) H2(j ) ...(2) Steady-state output
where, H1(j ) = 2 cos 3s
15 (1 e )
2 sin 2 = lim s Y (s ) = lim s
H2(j ) = = 2 Sa(2 ) s 0 s 0 s s
2
3s
h2(t) = 15 lim 3e [Q L-Hospital’s rule]
s 0
1/2 = 45
2 Sa[2 ]
33. (b)
t
–2 2 2
G( j ) = e 2
H1(j ) = 2 cos = + (ej
) e–j
So, H( j ) = 2 cos H2(j )
g(t ) dt = G(j0) = 0
= (ej + e–j ) H2(j )
H( j ) = ej H2( j ) + e–j H2(j ) y(t) = g(t) u(t)
h(t) = h2(t + 1) + h2(t – 1) Y(j ) = G(j ) U(j )
h( t) 1
Y(j ) = G( j ) + ( )
1 j
2 2
1/2 e 2 2
h(t) = = + e ( )
j
t
–3 –1 1 3
1
So, h(0) = 1 y(t ) dt = Y ( j 0) = = j
j
58 Electronics Engineering Signals & Systems
X( )
sin c 2 (5t ) dt
1
Let, f(t) = sinc(5t) sin at
= Sa (5 t) [Q sinc(t) = Sa( t)] t
–a a
1
F( ) = Rect
5 10 X( )
2 1/4
ESDf = F( )
sin 4 t 1 sin 4 t
= ×
F ( ) = G10 ( ) = F( ) 4 t 4 t
–4 4
1/5
1 2
Energy, Ex(t) = X( ) d
2
–5 5
4 2
1 1
1 = d
Ef = f 2 (t ) dt = ESD d 2
4
4
2
1 1 1
5 2 = × [8 ] = = 0.25 J
1 1 2 16 4
sin c 2 (5t ) dt = d
2 5
5
38. (a)
1 1 1
= × × 10 =
2 25 5 A sin ot LTI system B sin( ot + )
j4 f 1
e , f
2 sin at
Given, H(f ) = x1 (t ) =
t
0, f > –a a
2
So, H( f ) = 1
X1( )
H( ) = e–j2 f 1
2
h(t) = (t – 2) sin t
x1 ( t ) =
As we know that, t
–1 1
y(t) = x(t) h(t)
or, y(t) = X( ) H( ) x(t) = x1(t) x1(t)
y(t) = x(t) (t – 2) X( ) = X1( ) X1( )
y(t) = x(t –2)
GATE Previous Years Solved Paper 59
X1( ) X1 ( ) CTFT 4 f f
4 sin c(2t ) rect = 2 rect
1 1 2 2 2
× 2
X( f ) df = 2 × (2)2 = 8
–1 1 –1 1
X( ) 2
So, y(t ) dt = 8
1
X(f )
=
2
–1 1
sin t f (Hz)
x(t) = –1 0 1
t
2
41. Sol. X( ) d
H(f )
2 2
1 = 2 x(t ) dt = 2 y(t ) dt
Since,
0
2
f = 2×2 y(t ) dt
–20 0 20
2
1 1 0
So, y(t) = × 8 cos(20 t + ) = 2×2 (t + 2)2 dt + (2t + 3)2 dt
2
2 1
= 4 cos(20 t + ),
1 0
42 (t + 2)3 (2t + 3)3
So, Py = =8W = 4 +
2 3 3× 2
2 1
42. Sol.
1 0 33 1 1 26
Hilbert transform does not alter the amplitude = 4 + =4 +
3 6 3 6
spectrum of the signal.
1 26 1 13
2
y(t ) dt =
2
x(t ) dt =
2
X ( f ) df = 4 + =4 × ×
So, 3 6 3 3
x(t) = 4 sinc(2t) 14 56
= 4 × =
3 3
CTFT
sin c(t ) rect (f )
60 Electronics Engineering Signals & Systems
Y(f )
f
–15 kHz 0 15 kHz
(–10 kHz – 5 kHz) (10 kHz + 5 kHz)
GATE Previous Years Solved Paper 61
Answers
EE Fourier Transforms, Frequency Response and Correlation
9. (b) 10. (a) 11. (c) 12. (6) 13. (d) 14. (10)
2 ej /2
ej /2
j t /2 Y(j ) = if, <
= xe
2j
–
sin /2 j /2
= e
/2
1/
F.T.
F[ x(t ) + x( t ) X( ) + X( ) or Y(j ) = if, <
sin /2 j /2
= [e + ej /2
] –
/2
1
sin /2 so, y(t) = Sa ( t) if, <
= 2 cos
/2 2
1
y(t) = sin c ( t ) if, <
= 2 sin c cos
2 2
1
2. (a) or y(t) = sin c ( t ) if, <
x(t) = sinc( t) = Sa[ t]
So, output is of the form k sinc( t)
h(t) = sinc( t) = Sa[ t]
where, = min( , )
x(t) = Sa[ t]
3. (d)
1/ Symmetrically located pole and zero
All pass filter
X(j ) =
(Constant magnitude)
–
(– )
h(t) = Sa[ t]
62 Electronics Engineering Signals & Systems
4. (d) 7. (c)
By using Parseval’s theorem, Given signal f(t) is an odd signal. Hence F( ) is
2 1 imaginary and odd function of .
X( ) d = 2 1 dt = 2 × 2
1
8. (a)
2
X( ) d =4 Given signal can be drawn as,
x(t)
5. (c)
2 sin 2 1
H(j ) = cos
t
ej + e j
2 sin 2 –1 1
=
2 2 For signal,
1 j 2 sin 2 j 2 sin 2
= e +e f (t )
2
1
2 sin 2
Let, X( ) =
t
1; 2<t<2 –T/2 T/2
Then, x(t) =
0 ; otherwise F( ) is given by
By time shifting property,
Gate width
1 2
h(t) = ( x (t + 1) + x(t 1))
2
T
1 1 F( ) = T Sa
h(0) = [ x(1) + x( 1) = [1 + 1] = 1 2
2 2
Area of gate
6. (b) pulse
1 1
F( ) e j t
d x( at ) X
Now, f(t) = a a
2
x(2t ) Sa ...(i)
2 f(t) = F( ) e j t
d 2
t
u, and x 4 Sa (2 ) ...(ii)
2
1 14. Sol.
will be X1 ( j ) X 2 ( j ) and by looking at
2 By taking inverse Fourier transform,
x(t) = te–10t u(t)
X1(j ) and X2(j ) we can say that X1(j ) X2(j )
Now, x(t)t = 1 = 1 × e–10 × 1 = e–10
will be conjugate symmetric and thus x1(t) × x2(t)
10
will be real. Thus, ln{ x(t )} = ln ( e ) = 10 = 10
5 Laplace Transform
ELECTRO NICS EN GINEERIN G (a) 2[1 – e–2t] u(t) (b) 4[e–t – e–2t] u(t)
(GATE Previous Years Solved Papers) (c) sin2t (d) (1 – 4e–4t) u(t)
[EC-1990 : 2 Marks]
Q.1 Laplace transform of the functions tu(t) and u(t)
sin(t) are respectively. Q.6 The pole-zero pattern of a certain filter is shown
in figure. The figure must be of the following
1 s 1 1
(a) 2
, 2 (b) , 2 type.
s s +1 s s +1
1 1 s j
(c) 2
, 2 (d) s , 2
s s +1 s +1 +j2
[EC-1987 : 2 Marks]
+j1
Q.2 The Laplace transform of a function f(t) u(t),
–1
where f(t) is periodic with period T, is A(s) times
the Laplace transform of its first period. Then, +1
(a) A(s) = s –j 1
1
(b) A(s) = –j 2
(1 exp( Ts ))
1 (a) low-pass (b) high-pass
(c) A(s) =
(1 + exp( Ts)) (c) all-pass (d) band-pass
(d) A(s) = exp (Ts) [EC-1991 : 2 Marks]
[EC-1988 : 2 Marks] Q.7 The voltage across an impedance in a network
Q.3 The transfer function of a zero-order hold is is V(s) = Z(s) I(s), where V(s), Z(s) and I(s) are the
Laplace transform of the corresponding time
1 exp( Ts) 1
(a) (b) functions v(t), z(t) and i(t). The voltage v(t) is
s s
(a) v(t) = z(t) i(t)
1
(c) 1 (d) t
[1 exp( Ts)]
(b) v(t ) = i( ) z(t )d
[EC-1988 : 2 Marks] 0
t
Q.4 The transfer function of a zero-order hold is
(c) v(t ) = i( ) z(t + ) d
1 exp( Ts ) 1 0
(a) (b)
s s (d) v(t) = z(t) + i(t)
1 [EC-1992 : 2 Marks]
(c) 1 (d)
[ exp( Ts)]
Q.8 The Laplace transform of te periodic function
[EC-1988 : 2 Marks] f(t) described by the curve below, i.e.,
Q.5 The response of an initially relaxed linear sin t if (2n 1) t 2n ( n = 1, 2, 3...)
f (t ) =
constant parameter network to a unit impulse 0 otherwise
applied at t = 0 is 4e–2 u(t). The response of this is ________ .
network to a unit step function will be
GATE Previous Years Solved Paper 65
[EC-1995 : 1 Mark]
Q.18 If L[ f (t )] = , then the value of
Q.13 The transfer function of a linear system is the (s2 + 2
)
(a) ratio of the output, vo(t) and input vi(t).
(b) ratio of the derivatives of the output and lim f (t )
t
the input.
66 Electronics Engineering Signals & Systems
Q.19 The transfer function of a zero-order hold system (c) (te–2t) u(t) (d) (te–1t) u(t)
is ( denotes convolution, and u(t) is unit step
function)
1 sT 1 sT
(a) (1 + e ) (b) (1 e ) [EC-2001 : 1 Mark]
s s
Q.24 The Laplace transform of a continuous-time
1 1 sT
(c) 1 e sT (d) 1 + e
s s 5 s
signal x(t) is X (s ) = . If the Fourier
2
[EC-1998 : 1 Mark] s s 2
transform of this signal exists, then x(t) is
Q.20 If L [f(t) = F(s), then L [ f(t – T)] is equal to
(a) e2t u(t) – 2e–t u(t)
(a) esT F(s) (b) e–sT F(s)
(b) –e2t u(–t) + 2e–t u(t)
F(s ) F(s)
(c) (d) (c) –e2t u(–t) – 2e–t u(t)
1 + esT 1 e sT
(d) e2t u(–t) – 2e–t u(t)
[EC-1999 : 1 Mark]
[EC-2002 : 2 Marks]
Q.21 Given that,
Q.25 The Laplace transform of i(t) is given by
2
s+2 s +1 2
L [ f (t )] = 2
, L [ g(t )] = , I (s) =
s +1 (s + 3) (s + 2) s (1 + s )
t As t , the value of i(t) tends to
h(t ) = f ( ) g(t )d
(a) 0 (b) 1
0
(c) 2 (d)
L[h(t)] is
[EC-2003 : 1 Mark]
2
s +1
(a) Q.26 Consider the function f(t) having Laplace
s+3
transform:
1
(b) F(s ) = o , Re[s] > 0
s+3
s2 + 2
o
s2 + 1 s+2 The final value of f(t) would be
(c) +
(s + 3) (s + 2) s2 + 1 (a) 0 (b) 1
(d) None of the above (c) –1 f( ) 1 (d)
[EC-2000 : 1 Mark] [EC-2006 : 2 Marks]
Q.22 A linear time invariant system has an impulse Q.27 If the Laplace transform of a signal y(t) is
response e2t, for t > 0. If initial conditions are
1
zero and the input is e3t, the output for t > 0 is Y (s) = , then its final value is
s (s 1)
(a) e3t – e2t (b) e5t
(a) –1 (b) 0
(c) e3t + e2t (d) none of these
(c) 1 (d) unbounded
[EC-2000 : 2 Marks]
[EC-2007 : 1 Mark]
GATE Previous Years Solved Paper 67
Q.28 Given that, F(s) is the one-side Laplace transform Q.33 The unilateral Laplace transform of f(t) is
t 1
. The unilateral Laplace transform of
of f(t), the Laplace transform of f ( ) d is s2 + s + 1
0
t f(t) is
1 s 2s + 1
(a) sF(s) – f(0) (b) F (s ) (a) (b)
s 2
(s + s + 1) 2
(s + s + 1)2
2
s
1 s 2s + 1
(c) F( ) d (d) [ F( s ) f (0)] (c) (d)
s 2
(s + s + 1) 2 (s + s + 1)2
2
0
[EC-2009 : 2 Marks] [EC-2012 : 1 Mark]
Q.29 A continuous-time LTI system is described by Q.34 The impulse response of a system is h(t) = tu(t).
For an input u(t – 1), the output is
d 2 y(t ) dy(t ) dx(t )
+4 + 3 y(t ) = 2 + 4x(t )
dt 2 dt dt t2 t (t 1)
(a) u(t ) (b) u (t 1)
Assuming zero initial conditions, the response 2 2
y(t) of the above system for the input (t 1)2 t2 1
x(t) = e–2t u(t) is given by (c) u (t 1) (d) u (t 1)
2 2
(a) (et – e3t) u(t) (b) (e–t – e–3t) u(t) [EC-2013 : 1 Mark]
(c) (e–t + e–3t) u(t) (d) (et + e3t) u(t)
Q.35 Assuming zero initial condition, the response
[EC-2010 : 2 Marks]
y(t) of the system, given below to a unit step
Q.30 If the unit step response of a network is (1 – e– t), input u(t) is
then its unit impulse response is
U(s ) 1/s Y(s )
(a) e– t (b) –1 e– t
y (t ) + 5 y ( t ) = u ( t ) 1
a transfer function H (s ) = . To make
2
s +s 6
When y(0) = 1 and u(t) is a unit step function,
y(t) is this system causal it needs to be cascaded with
(a) 0.2 + 0.8e–5t (b) 0.2 – 0.2e–5t another LTI system having a transfer function
(c) 0.8 + 0.2e–5t (d) 0.8 – 0.8e–5t H1(s). A correct choice for H1(s) among the
[EC-2014 : 2 Marks] following options is
(a) s + 3 (b) s – 2
Q.39 The input –3e–2t u(t), where u(t) is the unit step
(c) s – 6 (d) s + 1
function, is applied to a system with transfer
[EC-2014 : 2 Marks]
s 2
function . If the initial value of the output Q.43 A causal LTI system has zero initial conditions
s+3
and impulse response h(t). Its output x(t) and
is –2, then the value of the output at steady state input y(t) are related through the linear constant
is _______ .
coefficient differential equation,
[EC-2014 : 1 Mark]
d 2 y(t ) dy(t ) 2
Q.40 Let h(t) denote the impulse response of a causal 2
+ + y(t ) = x(t )
dt dt
1 Let another signal g(t) be defined as,
system with transfer function . Calculate
s+1 t
2 dh(t )
the following three statements: g( t ) = h( ) d + + h (t )
dt
S1 : The system is stable. 0
Q.44 Input x(t) and output y(t) of an LTI system are Q.48 Let x(t) = s(t) + s(–t) with s(t) = e–4t u(t), where
related by the differential equation y (t) – y (t) – u(t) is unit step function. If the bilateral Laplace
6y(t) = x(t). If the system is neither causal nor transform of x(t) is
stable, the impulse response h(t) of the system is 16
X (s) = 2
4 < Re { s} < 4
1 3t 1 2t s 16
(a) e u( t) + e u( t )
5 5 Then the value of is _______ .
1 3t 1 2t [EC-2015 : 2 Marks]
(b) e u ( t) + e u( t )
5 5
Q.49 Consider the function g(t) = e–t sin(2 t) u(t)
1 3t 1 2t where u(t) is the unit step function. The area
(c) e u( t) e u(t )
5 5 under g(t) is _______ .
1 3t 1 2t [EC-2015 : 1 Mark]
(d) e u ( t) e u(t )
5 5
Q.50 The Laplace transform of the causal periodic
[EC-2015 : 2 Marks]
square wave of period T shown in the figure
Q.45 Consider the differential equation, below is
dx f (t )
= 10 0.2 x with initial conduction x(0) = 1.
dt
1
The response x(t) for t > 0 is
(a) 2 – e–0.2t (b) 2 – e0.2t
(c) 50 – 49e–0.2t (d) 50 – 49e0.2t
t
[EC-2015 : 2 Marks] 0 T/2 T 3T/2 2T
(a) X - R, Y - Q, Z - P
G(s )
(b) X - Q, Y - P, Z - R that is, Y (s ) = . The forced response of the
s
(c) X - R, Y - P, Z - Q
system is
(d) X - P, Y - R, Z - Q
(a) u(t)
[EC-2016 : 2 Marks]
(b) 2u(t)
(c) u(t) – 2e–t u(t) + e–3t u(t)
2
Q.52 A signal 2 cos t cos( t ) is the input to (d) 2u(t) – 2e–t u(t) + e–3t u(t)
3
[EC-2019 : 1 Mark]
an LTI system with the transfer function,
H(s) = es + e–s Q.56 A system with transfer function
If Ckdenote the kth coefficient in the exponential 1
G(s) = ,a>0
Fourier series of the output signal, then c3 is (s + 1) (s + a)
equal to is subjected an input 5 cos3t. The steady-state
(a) 0 (b) 1
1
(c) 2 (d) 3 output of the system is cos(3t 1.892).
10
[EC-2016 : 2 Marks]
The value of a is ________ .
Q.53 Consider the following statements for [EC-2020 : 2 Marks]
continuous-time linear time invariant (LTI)
systems: Q.57 Let x1(t) = e–t u(t) and x2(t) = u(t) – u(t – 2), where
I. There is no bounded input bounded output u( ) denotes the unit step function. If y(t) denotes
(BIBO) stable system with a pole in the right the convolution of x 1 (t) and x 2 (t), then
half of the complex plane. lim y(t ) = ___ (Rounded off to 1 decimal place).
t
II. There is no causal and BIBO stable system
with a pole in the right half of the complex [EC-2022]
plane.
Which one among the following is correct? ELECTRICAL EN GINEERIN G
(a) Both I and II are true. (GATE Previous Years Solved Papers)
(b) Both I and II are not true.
Q.1 The Laplace transforma.tion of f(t) is F(s).
(c) Only I is true.
(d) Only II is true. Given, F( s ) = , the final value of f(t) is
s2 + 2
[EC-2017 : 1 Mark]
(a) infinity (b) zero
Q.54 The transfer function of a causal LTI system is
(c) one (d) none of these
H(s) = 1/s. If the input to the system is
[EE-1995 : 1 Mark]
x(t) = [sin(t)/ t] u(t), where u(t) is a unit step
function, the system output y(t) as t is Q.2 The Laplace transform of (t2 – 2t) u(t – 1) is
________ .
2 s 2 s 2 2s 2 s
[EC-2017 : 2 Marks] (a) e e (b) 3
e e
s 3
s 2 s s2
Q.55 Let Y(s) be the unit-step response of a causal
2 s 1 s
system, having a transfer function, (c) e e (d) None of the above
s3 s
3 s
G(s) = [EE-1998 : 2 Marks]
(s + 1) (s + 3)
GATE Previous Years Solved Paper 71
Q.11 The Laplace transform of g(t) is Q.15 Assuming zero initial condition, the response
1 3s 1 y(t) of the system given below to a unit step input
(a) (e e 5s ) (b) (e 5s
e 3s
)
s s u(t) is
3s 1 5s
e
(c) (1 e 2s
) (d) (e e 3s ) U(s) 1/s Y(s )
s s
[EE-2010 : 2 Marks] (a) u(t) (b) t u(t)
Q.12 Let the Laplace transform of a function f(t) which t2
(c) u(t ) (d) e–t u(t)
exists for t > 0 be F1(s) and the Laplace transform 2
of its delayed version f(t – ) be F2(s). F1 (s) be [EE-2013 : 1 Mark]
the complex conjugate to F1(s) with the Laplace Q.16 Which one of the following statements is not
true for a continuous time causal and stable LTI
F (s) F1 (s) system ?
variable set as s = + j . If G(s) = 2 2
,
F1 (s) (a) All the poles of the system must lie on the
left side of the j -axis.
then the inverse Laplace transform of G(s) is (b) Zero of the system can lie anywhere in the
(a) an ideal impulse (t). s-plane.
(b) an ideal delayed impulse (t – ).
(c) All the poles must lie within s = 1.
(c) an ideal step function u(t).
(d) All the roots of the characteristic equation
(d) an ideal delayed step function u(t – ).
must be located on the left side of the j -axis.
[EE-2011 : 2 Marks]
[EE-2013 : 1 Mark]
Q.13 The unilateral Laplace transform of f(t) is
Q.17 Consider an LTI system with transfer function:
1 1
2
. The unilateral Laplace transform of H (s) =
s +s+1 s (s + 4)
t f(t) is If the inputs to the system is cos(3t) and the
s 2s + 1 steady-state output is A sin(3t + ), then the
(a) (b)
2
(s + s + 1) 2
(s + s + 1)2
2 value of A is
1 1
s 2s + 1 (a) (b)
(c) (d) 30 15
(s 2 + s + 1)2 (s 2 + s + 1)2
3 4
[EE-2012 : 1 Mark] (c) (d)
4 3
Q.14 Consider the differential equation: [EE-2014 : 2 Marks]
d 2 y(t ) dy(t )
2
+2 + y(t ) = (t ) with t
dt dt Q.18 The Laplace transform of f (t ) = 2 is s–3/2.
dy
y(t ) t = 0 = 2 and =0
dt t = 0 The Laplace transform of g(t ) = 1/ t is
dy 5/2
The numerical value of is 3s
dt t = 0+ (a) (b) s–1/2
2
(a) –2 (b) –1 (c) s1/2 (d) s3/2
(c) 0 (d) 1 [EE-2015 : 1 Mark]
[EE-2012 : 2 Marks]
GATE Previous Years Solved Paper 73
Q.19 The Laplace transform of f(t) = e2t sin(5t) u(t) is Q.24 The output response of a system is denoted as
5 5 y(t), and its Laplace transform is given by
(a) 2 (b) 2
s 4s + 29 s 5 10
Y (s) = 2
s 2 5 s(s + s + 100 2 )
(c) 2 (d)
s 4s + 29 s+5 The steady-state value of y(t) as,
[EE-2016 : 1 Mark]
1
(a) 100 2 (b)
10 2
Y (s) s
Q.20 The transfer function of system is = .
R(s ) s + 2 1
(c) 10 2 (d)
The steady-state output y(t) is A cos(2t + ) for 100 2
the input cos(2t). The value of A and , [EE-2019 : 1 Mark]
respectively are
Q.25 A system transfer function is
1 1
(a) , 45° (b) , + 45°
2 2 a1 s 2 + b1s + c1
H (s) =
(c) 2 , 45° (d) 2 , + 45° a2 s 2 + b2 s + c 2
[EE-2016 : 1 Mark] If a1 = b1 = 0, and all other coefficient are positive,
Q.21 Consider a causal LTI system characterized by the transfer function represents a
(a) high pass filter (b) low pass filter
dy(t ) 1
differential equation + y(t ) = 3x(t ). The (c) notch filter (d) band pass filter
dt 6
[EE-2019 : 1 Mark]
response of the system to the input
x(t) = 3e–t/3 u(t), where u(t) denotes the until step Q.26 The inverse Laplace transform of
function, is
s+3
(a) 9 e–t/3 u(t) H (s) = 2
for t 0 is
s + 2s + 1
(b) 9 e–t/6 u(t)
(c) 9 e–t/3 u(t) – 6 e–t/6 u(t) (a) 2t e–t + e–t (b) 3 e–t
(d) 54 e–t/6 u(t) – 54 e–t/3 u(t) (c) 3t e–t + e–t (d) 4t e–t + e–t
[EE-2016 : 1 Mark] [EE-2019 : 1 Mark]
Q.22 The solution of the differential equation, for t > Q.27 Consider a linear time-invariant system whose
0, y (t) + 2y (t) + y(t) = 0 with initial conditions input r(t) and output y(t) are related by the
y(0) = 0 and y (0) = 1, is (u(t) denotes the unit following differential equation,
step function).
d 2 y(t )
(a) t e–t u(t) (b) (e–t – te–t) u(t) + 4 y(t ) = 6 r (t )
dt 2
(c) (–e–t – te–t) u(t) (d) e–t u(t)
[EE-2016 : 1 Mark] The poles of this system are at
(a) +4j, –4j (b) +4, –4
Q.23 Consider a linear time-invariant system with
(c) +2, –2 (d) +2j, –2j
transfer function:
[EE-2020 : 1 Mark]
1
H (s ) =
(s + 1) Q.28 Which of the following statements is the about
If the input is cos(t) and the steady-state output the two sided Laplace transform?
is A cos(t + ), then the value of A is ______ . (a) It has no poles for any bounded signal that
[EE-2016 : 1 Mark] is non-zero only inside a finite time interval.
74 Electronics Engineering Signals & Systems
(b) If a signal can be expressed as a weighted Q.29 The causal realization of a system transfer
sum of shifted one sided exponential, then function H(s) having poles at (2, –1), (–2, 1) and
its Laplace transform will have no poles. zeroes at (2, 1), (–2, –1) will be
(c) It exists for every signal that may or may (a) unstable, complex, all pass
not have a Fourier transform. (b) unstable, real, high pass
(d) The number of finite poles and finite zeroes (c) stable, complex, low pass
must be equal. (d) stable, real, all pass
[EE-2020 : 1 Mark] [EE-2020 : 2 Marks]
Answers
EC Laplace Transform
9. (d) 10. (c) 11. (Sol.) 12. (b) 13. (c) 14. (a) 15. (a) 16. (a)
17. (1-D, 2-B) 18. (a) 19. (b) 20. (b) 21. (b) 22. (a) 23. (b)
24. (c) 25. (c) 26. (c) 27. (d) 28. (d) 29. (b) 30. (a) 31. (d)
32. (b) 33. (d) 34. (c) 35. (b) 36. (c) 37. (b) 38. (a) 39. (0)
40. (a) 41. (d) 42. (b) 43. (1) 44. (b) 45. (c) 46. (c) 47. (c)
48. (–2) 49. (0.155) 50. (b) 51. (c) 52. (b) 53. (d) 54. (0.5) 55. (a, c)
56. (4) 57. (0)
Solutions
EC Laplace Transform
1. (c) 2. (b)
L.T. 1 The given function represents a causal periodic
tu(t )
s 2 signal,
f(t) u(t) = 0 ; t<0
L.T. a
u(t )sin at Period of f(t) = T ; for t > 0
s + a2
2
Let, f1(t) = f(t) u(t); 0 t T
L.T. 1 1
u(t )sin t = = 0; otherwise
s 2 + 12 s2 + 1
GATE Previous Years Solved Paper 75
3. (a) 6. (c)
A zero order hold system holds the input signal In the given pole-zero pattern, poles and zeros
value for a period of T, i.e. for an input of short are symmetrical about imaginary axis. This is
duration ( ) pulse, it produces an output pulse the case of all-pass filter.
of duration T, the sampling period.
7. (b)
T
s (t ) Zero order We know that, multiplication of two functions
hold in frequency (s) domain is equivalent to the
convolution in time domain.
Input, x(t) = (t)
t
So, X(s) = 1
So, v(t) = i( ) z(t )d
Output, y(t) = u(t) – u(t – T) 0
Ts Ts
1 e 1 e
So, Y(s) = = 8. Sol.
s s s
The given signal f(t) is a causal periodic signal
Transfer function,
with period,
Ts
Y (s) 1 e To = 2
H(s) = =
X( s ) s f1(t) = f(t) ; 0<t<2
= 0; otherwise
76 Electronics Engineering Signals & Systems
s
f(t) s 1+ e 1
F(s) = e 2
× 2 s
s +1 (1 e )
2 s
t s (1 + e )
0 F(s) = e 2 s s
( s + 1) (1 + e ) (1 e )
s
e
F(s) =
(s 2 + 1) (1 e s
)
sin(t ) u (t )
9. (d)
K
F(s) =
0 2 3 4
t (s + 1) ( s 2 + 4)
So, poles = –1; ±2j
Since all the poles are not in the left half of
s-plane. So, the final value theorem cannot be
sin(t – ) u (t – )
applied.
L.T. 1 e as
r (t a ) e as × 2 = 2
s s
t
0 2 3 4 5 6 11. Sol.
If G(s) stable then all its poles must lie in the left
half of s-plane and there is no restriction on its
So, f1(t) = –[sin(t – ) u(t – ) + sin(t – 2 )
zeros, which can lie also in the right half of
1
sin(t ) u(t ) 2 1
s +1 s-plane. The inverse function F(s) = may
G( s)
e s
sin(t ) u(t ) or my not be stable. The zeros of G(s) may lie in
s2 + 1
the right half of s-plane.
e 2 s Hence the given statement is not true.
sin(t 2 ) u(t 2 )
s2 + 1
1
s 2 s
So, F(s) = is not always a stable transfer
e e G( s)
F1(s) = 2
+
s +1 s2 + 1 function.
s
s 1+e 12. (b)
F1(s) = e
s2 + 1 Initial value theorem,
F1 (s ) F1 (s ) 2s(s + 1)
F1(s) = = f(0+) = lim 2
1 e Tos
1 e 2 s s s + 2s + 5
GATE Previous Years Solved Paper 77
Y (s ) 20. (b)
H(s) =
X( s ) f(t – T) = F(s) e–sT
(Time shifting property of Laplace transform)
14. (a)
Final value theorem is used to find the final value 21. (b)
of the steady-state value of the system output, Convolution in time domain is multiplication
f( ) = lim sF(s) in s-domain.
s 0
1
L[h(t)] = L[ f (t )] × L[ g(t )] =
15. (a) s+3
(s + 5) 22. (a)
F(s) =
(s + 1) (s + 3) h(t) = e2t
2 1 1
F(s) = H(s) =
s+1 s+3 s+2
Taking inverse Laplace transform on both side, x(t) = e3t
f(t) = 2e–t – e–3t
1
X(s) =
16. (a) s 3
f (t )
Unit step response,
s(t) = (1 – e– t)
So, unit impulse response is
t ds(t ) d t t
h(t) = = (1 e )= e
dt dt
31. (d)
L–1[F(s)] = sin ot
x(t) = e–2t u(t) + (t – 6)
f(t) = sin ot
–1 f( ) 1 1 6s
X(s) = +e
s+2
27. (d) 1
Final value theorem is applicable only when all H(s) =
s
the poles of system lies in left half of s-plane. Y(s) = X(s) H(s)
Q s = 1 is right s-plane pole. Therefore, final
1 1
value theorem cannot be applied, Y(s) = + e 6s
s (s + 2) s
1 1
Y(s) = 1 1 1 1 6s
s 1 s Y(s) = + e
2 s s+2 s
y(t) = (et – 1) u(t)
Taking inverse Laplace transform, we have
Q Unbounded.
y(t) = 0.5(1 – e–2t) u(t) + u(t – 6)
GATE Previous Years Solved Paper 79
1 45. (c)
H(s) =
(s + 3) (s 2) Applying Laplace transform,
From the above expression it can be seen that 10
sX(s) – x(0) = 0.2 X(s)
s = 2 is a pole which lies on RHS of s-plane. So, s
H1(s) system that needs to be cascaded should 10 1
have one zero at 2. X(s) = +
s (s + 0.2) (s + 0.2)
1 Applying inverse Laplace transform, we get
Thus, H(s) H1(s) = (s 2)
(s + 3) (s 2) x = 50 – 49 e(–0.2)t
1
= causal system 46. (c)
(s + 3)
1, if a t b
43. Sol. f(t) = = u(t – a) –u(t – b)
0 , otherwise
d 2 y(t ) dy 2 e as
e bs
+ + y ( t ) = x (t )
dt 2 dt F(s) =
s
(s2 + s + 2) Y(s) = X(s)
G(s ) 2
Y(s) = R(s ) = , 2 =
1 + G(s) H (s) 1 3
T1 = 3, T2 = 2
1 1
= = e t /T for t 0 T0 = 6
1 + sT T
2
Unit step response, o = =
T0 3
1
R(s) = y(t) = 2 cos(2 t + ) – 2 cos(3
s ot + )
e j(2 ot + ) +e j(2 ot + )
e j(3 ot + ) j(3 ot + )
1 (1 + sT ) ( sT ) y(t) = e
Y(s) = =
s (1 + sT ) s (1 + sT ) y(t) = e
j(2 ot ) e j(2 ot )
+ e j(3 ot ) +e j(3 ot )
1 T 1 T C3 = 1
= =
s (1 + sT ) s 1
T s+ 53. (d)
T
• A BIBO stable system can have poles in right
y(t) = 1 – e–t/T for t 0
half of complex plane, if it is a non-causal
Ramp response,
system. So, statement-I is wrong.
1
R(s) = • A causal and BIBO stable system should
s2
have all poles in the left half of complex
1 1 T T plane. So, statement-II is correct.
Y(s) = = +
s 2 (1 + sT ) s2 s s+ 1
• So, option (d) is correct.
T
y(t) = t – T(1 – e–t/T) for t 0
GATE Previous Years Solved Paper 83
55. (a, c) =4
3 s
Given, G(s) = 57. (0)
(s + 1) (s + 3)
Given that, x1(t) = e–2t u(t)
G(s) 3 s x2(t) = u(t) – u(t – 2)
Y(s) = =
s s(s + 1) (s + 3) y(t) = x1(t) x2(t)
Using partial fractions, we get, By applying Laplace transform,
Y(s) = X1(s) X2(s)
A B C
Y(s) = + + 2s
s (s + 1) ( s + 3) 1 (1 e )
=
A = 1, B = –2 and C = 1 (s + 1) s
1 2 1 By applying final value theorem,
So, Y(s) = +
s (s + 1) (s + 3)
y(t ) t = 1 e 2s
= lim sY (s) = lim =0
and y(t) = u(t) – 2e–t u(t) + e–3t u(t) s 0 s 0 s+1
Forced response,
yf (t) = u(t) option (a)
Some authors also consider the zero state
response (ZSR) as the forced response and
according to them the correct answer will be
option (c).
84 Electronics Engineering Signals & Systems
Answers
EE Laplace Transform
9. (d) 10. (d) 11. (c) 12. (b) 13. (d) 14. (d) 15. (b) 16. (c)
17. (b) 18. (b) 19. (a) 20. (b) 21. (d) 22. (a) 23. (0.707) 24. (b)
25. (b) 26. (a) 27. (d) 28. (a) 29. (a)
Solutions
EE Laplace Transform
1. (d) 2 1
H(s) = +
s + 3 (s + 3)2
Q F(s) =
s2 + 2 2s + 7
T.F. = H(s) =
f(t) = sin( t) u(t) (s + 3)2
which is a periodic signal so final value theorem
6. (c)
is not applicable on it. Final value of f(t) may be
any value between-1 and +1. Final value = lim sY (s)
s 0
2. (c)
7. (d)
L (t2 – 2t) u(t – 1) = L [(t – 1)2 u(t – 1) – u(t – 1)]
5
F(s) =
2e s e s 2
s (s + 3s + 2)
=
s3 s
By initial value theorem,
3. (c) lim f (t ) = lim sF(t )
t 0 s
r (t )
LTI system
c(t ) 5×s
= lim 2
=0
s s (s + 3s + 2)
Unit delay block LTI system
r (t ) r(t 1) C (t 1)
e- s
8. (a)
4. (d) 5s 2 + 23s + 6
F(s) =
f( t) s(s 2 + 2s + 2)
f(t) = u(t) – u(t – T) A F(s) has only left hand poles.
By final value theorem,
6
lim F(t ) = lim sF(s) = =3
t t 0 s 0 2
T
Ts Ts
1 e 1 e 10. (d)
L [u(t) – u(t – T)] = =
s s s
f( t) g (t )
5. (d)
1
1
t
3(t )
y(t) = (2 + t )e u( ) d
0 t t
1 3 5
y(t) = [(2 + t) e–3t] u(t)
GATE Previous Years Solved Paper 85
Since, g(t) has width of 2 unit and f(t) has 1 unit 14. (d)
therefore we have to first expand f(t) by 2 unit
and for this we have to a scale f(t) by 1/2. d 2 y(t ) dy(t )
2
+2 + y (t ) = ( t )
dt dt
1
i.e., f1(t) = f t
2 s2Y(s) – sy(0) – y (0) + 2[sY(s) – y(0)]+Y(s) = 1
Now shift it by three unit to get g(t), Y(s) [s2 + 2s + 1] – (s × –2) –y (0)–(2 × –2) = 1
g(t) = f1(t – 3) Y(s) [s2 + 2s + 1] = –2s – 3
t 3 t 3 2s 3 2 1
g(t) = f =f Y(s) = =
2 2 2 s2 + 2s + 1 s + 1 (s + 1)2
y(t) = –2e–t – te–t
11. (c)
dy (t )
1, 3<t<5 = 2e–t – (–te–t + e–t) = e–t + te–t
g(t) = dt
0 , t < 3, t > 5
dy(t )
g(t) = u(t – 3) – u(t – 5) = 1+0=1
dt t = 0 +
L{g(t)} = L{u(t – 3)} – L{u(t – 5)}
1 3s 1 5s
= e e 15. (b)
s s
1 1 1
= (e 3s
e 5s
) Y(s) = U (s) = 2
s s s
3s y(t) = t u(t)
e 2s
= (1 e )
s 16. (c)
12. (b) All poles must lie within Z = 1.
F2(t) = L{f(t – )} = e–s F1(s)
s
17. (b)
e F1 ( s ) F1 (s ) s
G(s) = 2
=e 1
F1 (s ) Given, H(s) =
s ( s + 4)
G(t) = (t – )
r(t) = input = cos(3t) = cos t
13. (d) = 3 rad/sec
If, L[f(t)] = F(s) 1
H(j ) =
d n ( j ) ( j + 4)
then, L[tn f(t)] = ( 1)n F( s )
dsn 1 1 1
Now, H( j ) = = =
In this problem: 2
+4 2 3 25 15
1 (at = 3)
d d
Given, L[f(t)] = ( 1)1 1
F(s) = F(s )
ds ds 1
H(j ) = 90° tan
d 1 4
= 2
ds s + s + 1 1 3
= 90° tan
4
1
= × (2s + 1) = –126.86° (at = 3)
(s + s + 1)2
2
2s + 1
=
(s + s + 1)2
2
86 Electronics Engineering Signals & Systems
1 Q Hence, A = 1 × H ( j ) = 2
c(t) = cos(3t 126.86°)
15
1
1 = 1× = 0.707
= sin(3t 36.86°) ...(i) 2
15 and = +45°
or, c(t) = A sin(3t + ) ...(ii)
Comparing equations (i) and (ii), we have 21. (d)
25. (b) –2 2
c1
H(s) = 2 (as a1 = b1 = 0)
a2 s + b2 s + c 2
–1
c1
=
(1 + s 1 ) (1 + s 2) Filter is all pass since for each pole, there is a
c1 mirror image zero.
Put s = 0, H(0) =
c2 System is unstable because for stability of causal
Put s = , H( ) = 0 system all poles should lie in the L.H.S. of
s-plane and here one pole is lying in the R.H.S.
At s = 0 At s = Type of filter
[s (2 + j ) [s ( 2 j )]
Constant 0 LPF H(s) =
[s (2 + j ) [s ( 2 + j )]
0 Constant HPF
[s (2 + j ) [s + (2 + j )]
0 0 BPF =
[s (2 j ) [s + ( 2 j )]
1 1 BSF
s2 (2 + j )2 s 2 (4 1 + 4 j )
which represents 2nd order low pass filter. = =
s 2 (2 j )2 s2 (4 1 4 j )
26. (a)
s2 3 4j
=
s+3 s + 1+ 2 s 2
3+ 4j
L 1
= L 1
s2 + 2s + 1 (s + 1)2 i.e. transfer function is complex.
1 1 2
= L +
s + 1 (s + 1)2
= e–t + 2te–t
6 Z-Transform
z 5 6 6
(c) < z< (d) < z<
(d) and the system is unstable. 6 5 5
z 5
[EC-2005 : 1 Mark]
[EC-2002 : 2 Marks]
Q.13 If the region of convergence of x1[n] + x2[n] is
Q.9 A sequence x(n) with the z-transform
X(z) = z4 + z2 – 2z + 2 – 3z–4 is applied as an 1 2
< z < , then the region of convergence of
input to a linear, time-invariant system with the 3 3
impulse response h(n) = 2 (n – 3) where,
x1[n] – x2[n] includes
1, n=0 1 2
(n) = (a) < z <3 (b) < z <3
0 , otherwise 3 3
The output at n = 4 is 3 1 2
(c) < z <3 (d) < z<
(a) –6 (b) zero 2 3 3
(c) 2 (d) –4 [EC-2006 : 1 Mark]
[EC-2003 : 1 Mark] Q.14 The z-transform X[z] of a sequence x[n] is given
z 0.5
Q.10 The z-transform of a system is H ( z) = . If by X [ z] = . It is given that the region of
1
z 0.2 1 2z
convergence of X[z] includes the unit circle. The
the ROC is z < 0.2, then the impulse response
value of x[0] is
of the system is
(a) –0.5 (b) 0
(a) (0.2)n u[n]
(c) 0.25 (d) 0.5
(b) (0.2)n u[–n – 1]
[EC-2007 : 2 Marks]
(c) –(0.2)n u[n]
(d) –(0.2)n u[–n – 1] Statement for Linked Answer Questions (15 and 16):
[EC-2004 : 1 Mark] In the following network, the switch is closed at t = 0–
and the sampling starts from t = 0. The sampling
Q.11 A causal LTI system is described by the frequency is 10 Hz.
difference equation,
S 10 µF
2y[n] = y[n – 2] – 2x[n] + x[n – 1]
x(n) X(z )
The system is stable only if 5V 200 k
Sampler
z-transform
(fs = 10 Hz)
(a) = 2, <2
Q.16 The expression and the region of convergence Consider the following statements:
of the z-transform of the sampled signal are S1 : The system is stable and causal for
5z 5 1
(a) 5
, z <e ROC : z >
z e 2
5z 0.05 S2 : The system is stable but not causal for
(b) 0.05
, z <e
z e
1
5z ROC : z <
0.05 4
(c) 0.05
, z >e
z e S3 : The system is neither stable nor causal for
5z 5
(d) , z >e 1 1
z e 5 ROC : < z<
4 2
[EC-2008 : 2 Marks]
Which one of the following statement is valid?
Q.17 The ROC of z-transform of the discrete-tme (a) Both S1 and S2 are true.
n n
(b) Both S2 and S3 are true.
1 1
sequence, x(n) = u(n) u ( n 1) is (c) Both S1 and S3 are true.
3 2
(d) S1, S2 and S3 are all true.
1 1 1 [EC-2010 : 2 Marks]
(a) < z< (b) z >
3 2 2
Q.21 Two systems H1(z) and H2(z) are connected in
1 cascade as shown below. The overall output
(c) z < (d) 2 < z < 3
3 y(n) is the same as the input x(n) with a one unit
[EC-2009 : 1 Mark] delay. The transfer function of the second system
H2(z) is
Q.18 Consider the z-transform, X(z) = 5z2 + 4z–1 + 3,
1
0 < z < . The inverse z-transform x[n] is x(n) H 1 ( z) =
(1 0.4z )
H2(z) y(n)
1
(1 0.6z )
(a) 5 [n + 2] + 3 [n] + 4 [n – 1]
(b) 5 [n – 2] + 3 [n] + 4 [n + 1]
(1 0.6 z 1 ) z 1 (1 0.6 z 1 )
(c) 5u[n + 2] + 3u[n] + 4u[n – 1] (a) (b)
z 1 (1 0.4 z 1 ) (1 0.4 z 1 )
(d) 5u[n – 2] + 3u[n] + 4u[n + 1]
[EC-2010 : 1 Mark] z 1 (1 0.4 z 1 ) (1 0.4 z 1 )
(c) (d)
Q.19 Two discrete-time systems with impulse (1 0.6 z 1 ) z 1 (1 0.6 z 1 )
responses h1[n] = [n – 1] and h2[n] = [n – 2] are [EC-2011 : 2 Marks]
connected cascade. The overall impulse
response of the cascaded system is n
Q.22 If x [n] = (1/3) (1/2)n u[ n], then the region
(a) [n – 1] + [n – 2] (b) [n – 4]
of convergence (ROC) of its z-transform in the
(c) [n – 3] (d) [n – 1] [n – 2]
z-plane will be
[EC-2010 : 1 Mark]
1 1 1
(a) < z <3 (b) < z<
Q.20 The transfer function of a discrete-time LTI 3 3 2
system is given by
1 1
(c) < z <3 (d) < z
3 1 2 3
2 z
H ( z) = 4 [EC-2012 : 1 Mark]
3 1 1 2
1 z + z
4 8
GATE Previous Years Solved Paper 91
j
H(e ) = 1, for all . If Re(a) 0, Im(a) 0,
0.5
then b equals
(a) a (b) a Re(z)
–0.5 0.5
1 1
(c) (d) –0.5
a a
[EC-2014 : 1 Mark]
92 Electronics Engineering Signals & Systems
(a) h[n] is real for all n. The condition on the filter coefficient that results
(b) h[n] is purely imaginary for all n. in a null at zero frequency is
(c) h[n] is real for only even n. (a) 1 = 2 = 0; 0 =– 3
–1
0 < a < b < 1. The region of convergence (ROC)
Z
of the z-transform of x[n] is
1 –5/3
y[n] (a) z > a (b) z > b
–1
(c) z < a (d) a < z< b
Z
[EC-2016 : 1 Mark]
(b) Re 1 1
0.5 2 has a zero at z = + j , and P(z) has a total of
2 2
four zeros, which one of the following plots
represents all the zeros correctly?
Img Img
Unit circle z-plane 2
z-plane
z =1
(c) Re 0.5
0.5 2
(a) Re
–2 –0.5 0.5 2
–0.5
Img
Unit circle z-plane –2
(d) Re Img
0.5 2
2
Img
2 Img
z-plane
1 1
3rd order pole
z =1
0.5
(d) Re –1 1
–2 0.5 1 2
(d) Re
–0.5
–1
–1
–2
[EC-2019 : 1 Mark]
[EC-2020 : 1 Mark]
Q.40 Which one of the following pole-zero
corresponds to the transfer function of an LTI Q.41 The transfer function of a stable discrete-time
system characterized by the input-output K( z )
LTI system is H ( z) = , where K and
difference equation given below? z + 0.5
3
are real numbers. The value of (rounded off to
y[n] = ( 1)k x [n k ]
k=0 one decimal place) with > 1, for which the
Img magnitude response of the system is constant
1 over all frequencies, is ________ .
4th order pole
[EC-2020 : 2 Marks]
–1 1
(a) Re ELECTRICAL EN GINEERIN G
(GATE Previous Years Solved Papers)
–1 Q.1 If u(t) is the unit step and (t) is the unit impulse
1
Img function, the inverse z-transform of R( z ) =
z+1
1
3rd order pole
for k > 0 is
(a) (–1)k (k) (b) (k) – (–1)k u(k)
–1 1
(b) Re (c) (–1)k u(k) (d) u(k) – (–1)k (k)
[EE-2005 : 2 Marks]
+
G(z ) [EE-2007 : 2 Marks]
+ Q.8 H(z) is a transfer function of a real system when
a signal x[n] = (1 + j)n is the input to such a
K system, the output is zero.
Further, the region of convergence (ROC) of
The system is stable for range of values of K
1 1 1
(a) 1, (b) (–1, 1) 1 z H ( z) is the entire z-plane
2 2
Q.18 Consider a causal and stable LTI system with Q.20 A cascade system having the impulse responses
rational transfer function H(z), whose
h1 (n) = {1 , 1} and h2 (n) = {1 , 1} is shown in
corresponding impulse response begins at n = 0.
2 poles P Q n
1
0.5 Q.21 Consider a signal x[n] = 1[n], where
2
Re(z) Re(z)
–0.5 1[n] = 0 if n < 0 and 1[n] = 1 if n 0. The
Unit circles Unit circles
z k
(i) (ii) Z-transform of x[n – k], k > 0 is with
1 1
1 z
2
Im(z) region of convergence being
R 1 1
(a) z< (b) z >
2 2
(c) z <2 (d) z >2
Re(z)
[EE-2020 : 1 Mark]
Unit circles
Q.22 Which of the following options is true for a linear
(iii) time-invariant discrete time system that obeys
the difference equation:
Which one of the following is true about the
y[n] – ay[n – 1] = b0 x[n] – b1x[n – 1]
frequency selectivity of these systems?
(a) Where x[n] = 0, n < 0 the function y[n], n > 0
(a) All three are high-pass filters.
is solely determined by the function x[n].
(b) All three are band-pass filters.
(b) The system is necessarily causal.
(c) all three are low-pass filters. (c) y[n] is unaffected by the values of x[n – k],
(d) P is a low-pass filter, Q is a band-pass filter k > 2.
and R is a high-pass filter. (d) The system impulse response is non-zero
[EE-2017 : 1 Mark] at infinitely many instants.
[EE-2020 : 2 Marks]
98 Electronics Engineering Signals & Systems
Answers
EC Z-Transform
9. (b) 10. (d) 11. (c) 12. (c) 13. (d) 14. (b) 15. (b) 16. (c)
17. (a) 18. (a) 19. (c) 20. (c) 21. (b) 22. (c) 23. (c) 24. (b)
25. (a) 26. (b) 27. (–0.5) 28. (12) 29. (c) 30. (a) 31. (0) 32. (c)
33. (a) 34. (c) 35. (b) 36. (d) 37. (c) 38. (b) 39. (d) 40. (c)
41. (–2)
Solutions
EC Z-Transform
1. (a) 2. (b)
Given that,
+ y1(z) +
x(z) y (z ) x(n) = an u(n) a>0
+ +
Z.T. z
x( n ) X(z) = ; z > a
Z–1 z a
1
X(z) = 1
; z >a
–b a 1 az
n z z
z[f(nT)] = f (nT ) z = = z<5
n= 5 z z 5
The system is stable because ROC includes unit
= a nT
z n
=
T 1 n
(a z ) circle.
n= n=
9. (b)
1 z
F(z) = = Y(z) = H(z) X(z)
1 aT z 1
z aT
H(z) = 2z –3
6. (c) Y(z) = 2z–3 (z4 + z2 – 2z + 2 – 3z–4)
= 2(z + z–1 – 2z–2 + 2z–3 – 3z–7)
Final value theorem,
Taking inverse of z-transform,
lim x[ N ] = lim (1 z 1 ) X( z) y(n) = 2[ (n + 1) + (n – 1) – 2 (n – 2)
N z 1
+ 2 (n – 3) – 3 (n – 7)]
1 z 1 (1 z 4 )
lim (1 z 1 ) At n = 4,
z 1 4 (1 z 1 )2 y(4) = 0
1 z 1 (1 z 4 )
= lim 10. (d)
z 1 4 (1 z 1 )
z z
H(z) = =
1 ( z2 1) ( z2 + 1) z 0.2 z(1 0.2 z 1 )
= lim
z 1 4 z 4 ( z 1)
1
2 H(z) = 1
1 ( z + 1) ( z 1) ( z + 1) 1 0.2z
= lim
z 1 4 z 4 ( z 1) ROC : z < 0.2
1 Comparing with,
= ×4 =1
4 1
an u( n 1) ; z <a
7. (a) 1 az 1
h(n) = u(n) we get, h(n) = –(0.2)n u(–n – 1)
n 11. (c)
H(z) = 1 z
n=0 2y[n] = y[n – 2] – 2x[n] + x[n – 1]
For the convergence of H(z), Taking z-transform,
2Y(z) = Y(z)z–2 – 2X(z) + X(z)z–1
( z 1 )n < Y(z) [2 – z–2] = X(z) [ z–1 – 2]
n=0
1
Y ( z) z 2
ROC is the range of values of z for which, = 2
X( z ) 2 z
1
z < 1 or z > 1 For system to be stable, can be of any value,
100 Electronics Engineering Signals & Systems
5 6 1
= z > = z < z > ...(i)
6 5 3
5 6
< z< 1 n
6 5 u( n 1) is left sided signal so ROC
2
13. (d) will be
ROC remains the same for addition and 1
z < ...(ii)
subtraction in z-domain. 2
From equation (i) and (ii) we see that ROC of the
14. (b) function will be
0.5 1 1
X(z) = 1 < z <
1 2z 3 2
Q ROC includes unit circle 18. (a)
Left handed system
z
x(n) = –(0.5) (2)n u(–n – 1) [ n + n0 ] zn0
x(0) = 0 X(z) = 5z2 + 4z–1 + 3; 0< z <
19. (c)
200 × 10 3 5
VR(s) = z
1 s h1[n] = [n 1] H 1 ( z) = z 1
200 × 10 3 +
10 × 10 6 s z
h2[n] = [ n 2] H 2 ( z) = z 2
5 6
5 × 2 × 10 × 10 × 10
= Overall impulse response in z-domain,
2 × 10 5 × 10 5 s + 1
H(z) = H1(z) H2(z)
10 5
= = = z–1 z–2 = z–3
2s + 1 s + 0.5
Overall impulse response in discrete-time
Therefore samples,
domain, h[n] = (n – 3)
x(n) = 5e–0.5n/10 = 5e–0.05n
GATE Previous Years Solved Paper 101
24. (b) 1 1 1
= j a
=
Given, x[n] = x[–n] b ae a
As we know that, or, b=a
z
x[ n] X[ z ]
27. Sol.
z 1
x[ n] X[ z ] 1
Here, H1(z) =
So, when (0.5 + j0.25) is a zero fo X(z). 1 pz 1
Now, x[ n] X( z 1 ) 1
H2(z) =
1 1 qz 1
Zero of X ( z) =
(0.5 + j0.25)
1 1
Also, p = ; q=
25. (a)
2 4
H(z) = H1(z) + rH2(z)
Input-output relation is given as,
y[n] = y(n – 1) + x[n] 1 r
= 1
+
Taking z-transform, 1 pz 1 qz 1
Y(z) = z–1 Y(z) + X(z) 1 r
Y(z) [1 – z–1] = X(z) = +
1 1 1 1
1 z 1+ z
Y ( z) 2 4
= H ( z) = 1
X( z ) 1 z
1 1 1 1
h[n] = an u[n] 1+ z +r 1 z
4 2
H(z) = ...(i)
1 1 1
Alos, h[n] = 2 n
u[n] = 2 1 z 1+ z 1
2 4
n=0 n=0
zero of H(z) (1 + r) – (q + pr) z–1 = 0 ...(ii)
=2 =2–2 q + pr
1 or, z=
2 = 2– 1+r
Since, the zero of H(z) lies on the unit circle.
= 1
2 Therefore, z = 1 or z = ±1
Taking, z = 1, we get
26. (b)
q + pr
For the given system, z= =1 ...(iii)
1+r
1
(z b)
H(z) = 1 ...(i) 1
(1 az ) By solving above expression with p = and
2
1
The pole lie at z = a and the zero lie at z = . 1
b q= , we get
Also ‘a’ is complex in nature. 4
j a r = –2.5
Thus, a= ae
But, r < 1 or –1 < r < 1
For an all pass system where H ( e j ) = 1, for Taking, z = –1 in equation (iii), we get
r = –0.5
all , if the pole lies at ‘a’ then the zero must be
present at 1/a .
GATE Previous Years Solved Paper 103
28. Sol. 2 z
Given, Y(z) = 2
= X ( z)
1 z( z 1) z 1
Given, X(z) = 1
; z >2
(1 2 z )
2 z 2 z
X(z) = (1 – 2z–1)–2 X(z) = = 2z 3
z 1 z 1
X(z) = 1 + 4z–1 + 12z–2 +...
x[n] = 2u[n – 3]
(using binomial expansion)
Therefore, x[2] = 0
Taking inverse z-transform, we get
x[n] = {1, 4, 12, ... 32. (c)
x[2] = 12 5
Y ( z) [1 z]
3
29. (c) =
X( z ) 2
z2 z +
The difference equation of the system, 9
1 5 (1 z)
x( n ) y(n 2) + y(n 1) = y(n) 5
6 6 Y(z) =
3 1 2
z z
Y ( z) 1 3 3
H(z) = =
X ( z) 1 + 1 z 2 5 z 1
6 6 5z 5z
Y(z) =
1 2
1 1 z z
Poles are at, z= , 3 3
2 3
n n
30. (a) 1 2
y(n) = 5 u(n) 5 u(n)
3 3
z4
H(z) =
1
2
1 1
2
1 33. (a)
z + z+ +
2 4 2 4 3
y(n) = i x(n i )
1 1 1 1 i=0
Poles = ± j , ±j
2 2 2 2 = 0x[n]
+ 1x[n – 1] + 2x[n – 2]
z4 +3 x[n – 3]
=
1 1 Y(z) = 0X(z) + 1X(z)z–1 + 2X(z)z–2
z2 z+ z2 + z +
2 2 + 2X(z)z–2 + 3X(z)z–3
z4 H(z) = 0 + 1z–1 + 2z–2 + 3z–3
= 1 2 Null at zero frequency
z 4 + z2 + z
4 j
z= e
=0
z4 1 4
H(z) = =1 z 0 = 0+ 1+ 2+ 3
1 4
z4 +
4 Option (a) satisfies the condition.
So answer is (a).
34. (c)
31. Sol. Poles are at z = ±2j
n Since x[n] is absolutely summable hence, DTFT
y[n] = x[m] = x[n] u[n] exists which implies ROC must include unit
m=0 circle.
z x(t) is a non-causal signal.
Y(z) = X( z)
z 1
104 Electronics Engineering Signals & Systems
ROC = ( z > a ) and ( z > b ) (i) h(n) is real. So, p(n) will be also real.
(ii) P(z) = P(z–1)
ROC = z > b
From (i) : If z1 is a zero of P(z), then z1 will be
36. (d)
also a zero of P(z).
n
Given, x[n] = (2.0) , <n<+ From (ii) : If z1 is a zero of P(z), then 1/z1 will be
n also a zero of P(z).
1
= 2 n u [ n] + u [ n 1] So, the 4 zeros are,
2
1 1
1 z1 = + j
ROC : z > 2 and z < 2 2
2
1 1
No ROC z 2 = z1 = j
2 2
37. (c) 1 1
z3 = = =1 j
Given, x[n] = [n – 3] + 2 [n – 5] z1 1 1
+ j
2 2
X(z) = z–3+ 2z–5
X(–z) = (–z)–3 + 2(–z)–5 1
Y(z) = X(–z) = –z–3 – 2z–5 z4 = = z3 = 1 + j
z1
= –[z–3 + 2z–5]
So, option (d) is correct.
y[n] = –x[n]
40. (c)
38. (b)
3
y(n) = ( 1)k x (n k )
Im
k=0
2 = x(n) – x(n – 1) + x(n – 2) – x(n – 3)
1 Y(z) = X(z) – z–1 X(z) + z–2 X(z) – z–3 X(z)
Y ( z) 1 2 3
H(z) = =1 z +z z
30° X( z)
Re
0.25
z3 z2 + z 1 ( z 1) ( z 2 + 1)
= =
z3 z3
Unit circle Pole zero plot :
Img
1
The ROC should include unit circle to make the 3rd order pole
1 1
Zero = ...(i) = = 2
Pole 0.5
Answers
EE Z-Transform
9. (d) 10. (a) 11. (c) 12. (b) 13. (a) 14. (c) 15. (c) 16. (a)
17. (0.29) 18. (0.097) 19. (b) 20. (d) 21. (b) 22. (d)
Solutions
EE Z-Transform
1. (b)
(2 n + 1)
y( n) Y2 ( z) = (5n n) z
z 1 n=0
F(z) = 1 =1 1
z+1 1+ z In Y2(z), powers of ‘z’ are odd. Therefore samples
= (k) – (–1)k u(k) in y2(n) are available only at odd instants of
time.
2. (c)
For causal system, if all the poles are inside the, Hence, x(n) y2 (n) = 0
n=
Location of poles, For linear phase FIR filter, g(n) should be either
even symmetric or odd symmetric about virtual
+ k ± k2 + 4 k
z= y-axis.
2
To, satisfy the above condition.
k + k2 + 4 k Case (i): =–
<1
2 (odd symmetric about virtual y-axis)
But in this case,
k + k2 + 4 k < 2 G(1) = G(–1) = 0
i.e. at low frequency G(z) = 0
k 2 + 4 k < (2 – k)
and at high frequency G(z) = 0
k2 + 4 k < (2 – k)
Thus in this case filter will be band-pass.
k2 + 4 k < 4 + k2 – 4 k
8k < 4 Case (ii): =
(even symmetric about virtual y-axis)
1
k< In this case:
2
At low frequency (z = 1) G(1) = 2
This condition is satisfied in only option (a).
At low frequency (z = –1) G(–1) = –2
5. (b) Filter will be either all pass or band stop.
X(z) = (1 – 3z–1) Now, G(e j ) = (e–j + e–j3 )
Y(z) = (1 + 2z–1) = e–j2 (ej + e–j )
h[n] = x(n – 1) y[n] = 2 e–j 2 cos
H[z] = z–1 X(z) Y(z)
9. (d)
H[z] = z–1 (1 – 3z–1) (1 + 2z–2)
H[z] = z–1 (1 + 2z–2 – 3z–1 – 6z–3) z
x(z) =
H[z] = (z–1 – 3z–2 + 2z–3 – 6z–4) ( z a)2
when input, zn
I(n) = [n – 1] zn – 1 X(z) =
( z a)2
then, I[z] = z –1
Since, z = a is a pole of second order therefore
Therefore output,
residue at z = a,
P(n) = h[n] I[n]
P(z) = H(z) I(z) 1 d zn
= ( z a)2
P(z) = (z–1 – 3z–2 + 2z–3 – 6z–4) × z– 1 dz ( z a )2
at z = a
1
= [nzn – 1]z = a = nan – 1
P(z) = z–2 – 3z–3 + 2z–4 – 6z–5
P(n) = [n – 2] – 3 [n – 3] + 2 [n – 10. (a)
4] y[n] = x[n] H[n]
– 6 [n – 5] y[z] = x[z] H[z]
y[z] = (4z–3 + 3z–1 + 2 – 6z2 + 2z3)
7. (a)
(3z–1 – 2)
G(z) = z–1 + z–3
= 12z–4 + 9z–2 + 6z–1 – 18z + 6z2
For, low frequency (z = 1) G(1) = + ...(i)
–8z–3 – 6z–1 – 4 + 12z2 – 4z3
For, low frequency (z = 1) G(–1) = –( + )
= –4z3 + 18z2 – 18z + 12z–4 + 9z–2
...(ii)
– 4 – 8z–3
For now, g(n) = {0, , 0, } y[n] 0 for n < 0
Therefore it is non-causal with finite support.
GATE Previous Years Solved Paper 107
1 n
1 n X 2 ( z) 2
x1[n] = u [ n] + u [ n 1] =
3 3 X1 ( z) z 1
Thus, transfer function,
1 n z 1 1
u [n] ; ROC : z > 2
3 1 1 3 H(z) =
1 z z 1
3
n
Therefore, pole location is z = 1.
1 z 1
u [ n 1] 1
; ROC : z < 3
3 1 1 14. (c)
1 z
3
LTI
x(t) Sampler y(n)
1 n z 1 1 x(n) system
and x2 [n] = u [ n]
1 1
; ROC : z >
2 1 z 2 H(z )
2
f s = 400 Hz
1
ROC is < z < 3. x(t) = 2 + 5 sin(100 t)
2
n n
t xTs = =
12. (b) f s 400
1 n
X(z) = 3
x(n) = 2 + 5sin 100
1 z 400
From z-transform definition,
= 2 + 5 sin n
4
n
X(z) = x[n] z
n= Here, 0 =
4
= x(0) + x(1) z–1 + x(2) z–2 + x(3) x–3... 2 2
Therefore, N = time period of x(n) = = =8
1 /4
X(z) = = 1 + 0 z 1 + 0 z 2 + 1 z 3 ... 0
1 z 3 N
1 1 z
By comparison x(2) = 0 and x(3) = 1. Now, H(z) = 1
N 1 z
13. (a) Applying, z = ej
Given that,
1 1 e j N
X1 (K + 1) a a 1 X1 ( K ) H(ej ) =
N 1 e j
X 2 (K + 1) = a+1 a X 2 (K )
For sinusoidal part of x(n):
With initial conditions,
X1(0) = 1; X2(0) = 0 1 1 e j 0N
H(e j 0 ) =
For a = 1 we can write, N 1 e j 0
X1 (K + 1) 1 0 X1 (K )
= Note: 0N = ×8 = 2
X 2 (K + 1) 2 1 X 2 (K ) 4
X1(K + 1) = X1(K) ...(i) j2 N
1 1 e
= =0
X2(K + 1) = 2X1(K) + X2(K) ...(ii) N 1 e j /40
108 Electronics Engineering Signals & Systems
K ( z2 1) 1 + 2z 1 + z 2 z 2 2z 4 z 5
H(z) = =
z2 1 z 2
At low frequency, i.e. z = 1 = 1 + 2z–1 + 2z–2 + z–3
H(1) = 0 x(n) = {1, 2, 2, 1}
h(n)
7 DTFS, DTFT and DFT
(GATE Previous Years Solved Papers) (b) E-1, F-3, G-2, H-4
(c) E-1, F-2, G-3, H-4
Q.1 The impulse response h[n] of a linear time (d) E-2, F-1, G-4, H-3
invariant system is given as, [EC-2005 : 2 Marks]
2 2, n = 1, 1
Statement of Linked Answer Questions (4 and 5):
h[n ] = 4 2, n = 2, 2 A sequence x(n) has non-zero values as shown in the
0, otherwise figure.
If the input to the above system is the sequence x(n)
e j n/4, then the output is
2
(a) 4 2 e j n /4 (b) 4 2 e j n /4 1 1
N 1
2 1
(b) X(r ) X( k + r )
1 1 N r =0
1/2 1/2 N 1
(d) 1
(c) X(r ) X( k + r )
N r =0
n
–5 –3 –1 1 3
(d) 0 [EC-2008 : 2 Marks]
[EC-2005 : 2 Marks]
Q.9 A system with transfer function H(z) has
Q.5 The Fourier transform of y(2n) will be impulse response h(n) defined as h(2) = 1,
(a) e–j2 [cos4 + 2 cos2 + 2] h(3) = –1 and h(k) = 0 otherwise. Consider the
(b) [cos2 + 2 cos + 2] following statements:
(c) e–j [cos2 + 2 cos + 2] S1 : H(z) is low-pass filter.
(d) e–j /2 [cos2 + 2 cos + 2] S2 : H(z) is an FIR filter.
[EC-2005 : 2 Marks] Which of the following is correct?
(a) Only S2 is true.
Q.6 A signal x(n) = sin( 0n + ) is the input to a linear
(b) Both S1 and S2 are false.
time-invariant system having a frequency
(c) Both S1 and S2 are true, and S2 is a reason
response H(e j ). If the output of the system
for S1.
Ax(n – n0), then the most general form of H(e j )
will be (d) Both S1 and S2 are true, and S2 is not a reason
for S1.
(a) –n0 0+ for any arbitrary real .
[EC-2009 : 2 Marks]
(b) –n0 0+2 k for any arbitrary integer k.
(c) n0 0+2 k for any arbitrary integer k. Q.10 The 4-point Discrete Fourier Transform (DFT)
(d) –n0 0
of a discrete time sequence {1, 0, 2, 3} is
[EC-2005 : 2 Marks] (a) [0, –2 + 2j, 2, –2 – 2j]
(b) [2, 2 + 2j, 6, 2 – 2j]
Q.7 A 5 point sequence x[n] is given as, x[–3] = 1,
(c) [6, 1 – 3j, 2, 1 + 3j]
x[–2] = 1, x[–1] = 0, x[0] = 5, x[1] = 1. Let X(ej )
denote the discrete-time Fourier transform of (d) [6, –1 + 3j, 0, –1 – 3j]
[EC-2009 : 2 Marks]
x[n]. The value of X( e j ) d is Q.11 For an N-point FFT algorithm with N = 2m, which
one of the following statements is true?
(b) The number of butterflies in the mth state is Q.16 The sequence x[n] = 0.5n u[n] where u[n] is the
N/m. unit step sequence, is convolved with itself to
(c) In place computation requires storage of
only 2 N node data. +
obtain y[n]. Then y[n] is ______ .
(d) Computation of a butterfly requires only one n=
complex multiplication.
[EC-2014 : 1 Mark]
[EC-2010 : 1 Mark]
Q.17 A Fourier transform pair is given by
Q.12 The first six points of the 8-point DFT of a real
Ae + j 6
valued sequence are 5, 1 –j3, 0, 3, –j4, 0 and n f
2 F.T.
u [n + 3]
3 – j4. The last two points of the DFT are 3 2 j2 f
1 e
respectively. 3
(a) 0, 1 – j3 (b) 0, 1 + j3
when u[n] denotes the unit step sequence. The
(c) 1 + j3, 5 (d) 1 – j3, 5
value of A is _______ .
[EC-2011 : 2 Marks]
[EC-2014 : 1 Mark]
Q.13 The DFT of a vector [a b c d] is the vector [ ].
Q.18 The N-point DFT of a sequence x[n], 0 n N – 1
Consider the product:
is given by
a b c d
N 1 2
d a b c 1 j nK
[p q r s] = [ a b c d ] X[K ] = x [n] e N , 0 K N 1
c d a b N n=0
b c d a
Denote this relation as X = DFT(x). For N = 4,
The DFT of the vector [p q r s] is a scaled version
which one of the following sequence satisfies
of
DFT (DFT (x)) = x.
(a) [ 2 2 2 2]
(a) x = [1 2 3 4] (b) x = [1 2 3 2]
(b) (c) x = [1 3 2 2] (d) x = [1 2 2 3]
(c) [ + + + + ] [EC-2014 : 2 Marks]
(d) [ ] [EC-2013 : 2 Marks] Q.19 Two sequence [a, b, c] and [A, B, C] are related
Q.14 Consider a discrete time periodic signal as,
A 1 1 1 a
n
x [n] = sin . Let ak be the complex Fourier 1 2
5 B 1 W3 W3 2 b j
where, W3 = e 3
C 1 W3 2 W3 4 c
series coefficients of x[n]. The coefficients {ak}
are non-zero when k = Bm ± 1, where m is any If another sequence [p, q, r] is derived as,
integer. The value of B is ______ .
[EC-2014 : 2 Marks] p 1 1 1 1 0 0 A /3
q = 1 W31 W32 0 W32 0 B /3
Q.15 An FIR system is described by the system
c 1 W32 W34 0 0 W34 C /3
function:
7 1 3 2 Tthen the relationship between the sequences
H ( z) = 1 + z + z
2 2 [p, q, r] and [a, b, c] is
The system is (a) [p, q, r] = [b, a, c] (b) [p, q, r] = [b, c, a]
(a) maximum phase (b) minimum phase (c) [p, q, r] = [c, a, b] (d) [p, q, r] = [c, b, a]
(c) mixed phase (d) zero phase [EC-2015 : 2 Marks]
[EC-2014 : 1 Mark]
GATE Previous Years Solved Paper 113
Q.20 Consider two real sequences with time-origin Q.25 A continuous-time speech signal xa(t) is sampled
marked by the bold value: at a rate of 8 kHz and the samples are
x1[n] = {1, 2, 3, 0}, x2[n] = {1, 3, 2, 1} subsequently grouped in blocks, each of size N.
Let X1(k) and X2(k) be 4-point DFTs of x1[n] and The DFT of each block to be computed in real
x2[n], respectively. time using the radix-2 decimation-in-frequency
Another sequence x3[n] is derived by taking FFT algorithm. If the processor performs all
4-point inverse DFT of X3(k) = X1(k) X2(k). The operations sequentially, and takes 20 µs for
value of x3[2] is _______ . computing each complex multiplication
(including multiplications by 1 and –1) and the
[EC-2015 : 2 Marks]
time required for addition/subtraction is
n negligible, then the maximum value of N is
1
Q.21 The value of n is ________ . _________ .
n=0 2
[EC-2016 : 2 Marks]
[EC-2015 : 1 Mark]
Q.26 Let h[n] be the impulse response of a discrete-
time linear time invariant (LTI) filter. The
n
Q.22 Let x [n] = 1 + cos be a periodic signal impulse response is given by
8
1 1 1
with period 16. Its DFS coefficients are defined h [0] = ; h [1] = ; h [2] =
3 3 3
15 and h[n] = 0 for n < 0 and n > 2
1
by ak = x [n] exp j kn for all k. The
16 n=0 8 Let H( ) be the Discrete-Time Fourier Transform
(DTFT) of h[n], where is the normalized
value of the coefficient a31 is ______ . angular frequency in radians. Given that,
[EC-2015 : 2 Marks] H( o) = 0 and 0 < o < , the value of o
(in radians) is equal to ________ .
Q.23 Consider the signal:
[EC-2017 : 2 Marks]
x[n] = 6 [n + 2] + 3 [n + 1] + 8 [n] + 7 [n – 1]
+ 4 [n – 2] Q.27 An LTI system with unit sample response
If X(e j ) is the discrete-time Fourier transform of h[n] = 5 [n] – 7 [n – 1] + 7 [n – 3] – 5 [n – 4] is a
3
X1 [8]
x [2n] is _________ .
X1 [11] is ________ . n=0
j n j n 2
x [n] = c1 exp + c2 exp (c) a1 = 1, a2 = W6 , a3 = W6
2 2
2
(d) a1 = 1, a2 = W6 , a3 = W6
where c1 and c2 are arbitrary real numbers. The
[EC-2019 : 2 Marks]
desired three-tap filter is given by
h[0] = 1, h[1] = a, h[2] = b Q.31 A finite duration discrete-time signal x[n] is
and h[n] = 0 for n < 0 or n > 2 obtained by sampling the continuous-time
What are the values of the filter taps a and b if signal x(t) = cos(200 t) at sampling instants
the output y[n] = 0 for all n, where x[n] is as t = n/400, n = 0, 1, ...., 7. The 8-point Discrete
given above? Fourier Transform (DFT) of x[n] is defined as,
7 nkn
n=0 j ,
x[n] y[n] = 0 X[ k ] = x [n] e 4 k = 0, 1, ..., 7
h[n] = {1, a, b} n=0
Q.34 For a vector x = [ x[0], x[1],..., x[7]], the 8-port If, x = [1, 0, 0, 0, 2, 0, 0, 0]
discrete Fourier transform (DFT) is denoted by and y = DFT(DFT ( x ))
X = DFT ( x ) = [ X[0], X[1],..., X[7]] then the value of y[0] is ______ (Rounded off to
one decimal place).
7
2
where, X[ k ] = x[n] exp j nk [EC-2022]
n=0 8
Here, j= 1
Answers
EC DTFS, DTFT and DFT
9. (a) 10. (d) 11. (d) 12. (b) 13. (a) 14. (10) 15. (c) 16. (4)
17. (3.375) 18. (b) 19. (c) 20. (11) 21. (2) 22. (0.5) 23. (8) 24. (6)
25. (4096) 26. (2.10) 27. (c) 28. (3) 29. (d) 30. (d) 31. (a) 32. (a)
Solutions
EC DTFS, DTFT and DFT
/4( n + 1)
2 2 (n 1) + 4 2 (n 2) 2 2 [e j + ej /4( n 2)
]
x(n) = ej n/4 jn /4
= e [4 2 ( e j /2 + e j /2 )
y(n) = x(n) h(n)
= 4 2 (n + 2) e jn /4 2 2 (e j /4
+e j /4
)]
+ 4 2 (n 2) e jn /4
= e
jn /4
[0 2 2 × 2 cos /4]
2 2 [ ( n + 1) e jn /4 y(n) = –4e jn /4
+ (n 1) e jn /4
]
116 Electronics Engineering Signals & Systems
2. (d) j 1 2j 1
= e e + ej + 2 + e j
+ e 2j
n 2 2
1
x(n) = u(n)
2 j e2 j + e 2 j
= e + ej + e j + 2
2n 2
1
y(n) = x 2 (n) = u2 ( n )
2 f(n) = e–j [cos2 + 2cos + 2]
2 n
1 6. (b)
= u(n)
2 • sin( on + ) = x(n) X(ej )
n • y(n) = Ax(n – no)
1
y(n) = u(n)
4 Y(ej ) = Ae jno X ( e j )
1 Y(e j ) jno
Y(z) = • H(ej ) = = Ae
1 1 X( e j
)
1 z
4
• H(ej ) = –no o+2 k (at = o)
Put, z = e j
1 7. (b)
Y(e j ) =
1 j X(ej ) = e3j + e2j + 0 + 5 + e–j
1 e
4
1 4 Q e aj d =0 if a 0
Y(ejo) = =
1 3
1
4
e3 j e2 j e j
X( e j ) d = + +5 +
4. (a) 3j 2j j
n = 5 + 5 = 10
y(n) = x 1 , n even
2
9. (a)
= 0 for n odd
h(2) = 1
n = 0, y(n) = x(–1) = 1
h(3) = –1
n = 2, y(n) = x(0) = 2
h(k) = 0 otherwise
n = 4, y(n) = x(1) = 1
n = 6, y(n) = x(2) = 1/2 h(k)
5. (c) 1
1
= (n + 1) + (n) + 2 (n 1) It is finite impulse response. It is not low-pass
2
filter.
1
+ (n 2) + (n 3)
2 10. (d)
Taking z-transform, 4-point DFT of sequence [1, 0, 2, 3] is given as,
1 1
F(z) = z + 1 + 2z 1 + z 2 + z 3 1 1 1 1 1 1+2 +3 6
2 2
1 j 1 j 0 1 2 + 3j 1+ 3j
z = ej = =
1 1 1 1 2 1+2 3 0
1 j j 2j 1 3j 1 j 1 j 3 1 2 3j 1 3j
F(e j ) = e + 1 + 2e +e + e
2 2
GATE Previous Years Solved Paper 117
12. (b) 7 1 3 2
• H ( z) = 1 + z + z =0
x[n] real 2 2
X[k] conjugate symmetric 2z2 + 6z + z + 3 = 0
X[k] X [N – k] 1
z1 = (inside the unit circle)
N = 8 2
X[k] = X [8 – k] z2 = –3 (outside the unit circle)
X[6] = X [8 – 6] = X [2] = 0 Mixed phase
X[7] = X [8 – 7] = X [1] = 1 + j3
16. Sol.
13. (a) Given, x[n] = 0.5n u[n]
DFT [p q r s] = [a b c d] [a b c d] Z-transform of x(n) is
So, DFT [p q r s] = [ 2 2 2 2]
1
X(z) =
14. Sol. (1 0.5 z 1 )
From discrete Fourier series definition, and Z-transform of y(n) = x(n) x(n) is
N 1 2
jk
N
n 1
x[n] = ak e Y(z) =
k=0 (1 0.5 z 1 )2
2 2
j n j n
= a 1e N + a0 + a1 e N ...(i) y( n) = Y ( z ) z = 1 = 4
n=
1 j n 1 j 5n
x[n] = e 5 + e
2j 2j 17. Sol.
Also given, n
2 Ae j 6 f
u(n + 3)
n 3 2
x[n] = sin 1 e j2 f
5 3
2 n
where, N = 10 = N = 10 2
N 5 Let, x[n] = u(n + 3)
3
By comparison,
Discrete Fourier transform is given as,
1 1
a1 = and a9 = a 1 =
2j 2j j n
X(e j ) = x[n] e
As the TFS coefficient ak is also periodic with n=
period N = 10, n
2 j n
a 1 = a11 = a21 .... = e
n= 3 3
a –1 = a9 = a19 ....
Given that, ak is non-zero for k = Bm ± 1. Put, n+3 = m
To satisfy this condition B must be ‘10’ where
‘m’ is any integer.
118 Electronics Engineering Signals & Systems
m 3 2
2 j ( m 3) j
So, X(e j ) = e where, W31 = e 3
m=0 3
4
j
3 m
2 2 j m W32 = e 3
= e ej 3
3 m=0 3 2
j
3 m
W3 1 = e 3
3 2 j
= e ej 3
j
4
2 3 2 3
m=0 W3 = e
j2 f 3 j6 f 2
3.375 e 3.375 e j
= = W3 4 = W3 1 = e 3
2 j2 f 2 j2 f
1 e 1 e
3 3
p c
So, A = 3.375
q = a
18. (b) r b
DFT (DFT (x)) = x
Let, x = [1 2 3 2] 20. Sol.
1 1 1 1 1 x1[n] = {1, 2, 3, 0}
x2[n] = {1, 3, 2, 1}
1 1 j 1 j 2
DFT (x) = X(k)3 = X(k)1 X(k)2
4 1 1 1 1 3
x3[n] = circular convolution of
1 j 1 j 4
x1[n] and x2[n]
8 4 = x1[n] x2[n]
1 2 1
= = x3 (0) 1 0 3 2 1 9
2 0 0
x3 (1) 2 1 0 3 3 8
2 1 = =
x3 (2) 3 2 1 0 2 11
1 1 1 1 4 x3 (3) 0 3 2 1 1 14
1 1 j 1 j 1
DFT (DFT (x)) = x3[2] = 11
4 1 1 1 1 0
1 j 1 j 1 21. Sol.
2 1 n n
1 1
= n u(n)
1 4 2 2 n= 2
= = n=0
2 6 3
4 2 n
1
= Z T n u(n)
2
z=1
19. (c)
A a+b+c
1 1 z
z
B = a + bW3 1 + cW3 2 2 2
= = 2
1 1
C a + bW3 2 + cW3 1 1 z z
1
2 2 z=1
a+b+c
W32 W31 3
p 1
a + bW3 1 + cW3 2 1/2
q = 1 W31 W32 W32 W31 = =2
3 1/4
r 1 W32 W32 W31 W31
a + bW3 2 + cW3 1
3
GATE Previous Years Solved Paper 119
j n
Time for each multiplication = Tm = 20 µsec
X(ej ) = x[n] e Tm = 20 × 10–6 sec
n=
Suppose block is size N, then time taken to
1
x[n] = X( e j ) e j n
d 1
2 generate each block = N × Ts = N × .
8000
1 Number of multiplication that can be performed
x[0] = X( e j ) d by processor in the time taken for each block =
2
N × Ts
1 j j
.
X( e ) Y(e )d = [x(n) y(n)]n = 0 Tm
2
Number of multiplication required to compute
Y(ej ) = sin2 (2 )
N
1 cos 4 DFT by Radix – 2 FFT algorithm = log 2 N .
= 2
2
Number of multiplication required by FFT
1 1 4j 1 4j
= e e Number of multiplication that can be performed
2 4 4
by the processor in the time taken in each block.
1 1 1
y[n] = [ n] [n + 4] [n 4] [Reason : Real time]
2 2 4
N N × Ts
log 2 N
1 1 1 2 Tm
y[n] = , 0, 0, 0, , 0, 0, 0,
4 2 4 1
2×
log2 N 8000 = 12.5
1 20 × 10 6
y[0] =
2 N 212.5 N 212 = 4096
x[n] = {6, 3, 8, 7, 4} ; x[0] = 8
26. Sol.
1 1 1 1
X( e j ) Y ( e j ) d = 2 x[0] y[0] Since, h[n] = [ n] + [n 1] + [n 2]
3 3 3
n=
1 j
1 So, H(e j ) = e [1 + 2 cos ]
= 2 ×8× = 8 3
2
H(e j o) = 0 ; for (1 + 2 cos o) = 0
120 Electronics Engineering Signals & Systems
1 To get y(n) = 0,
or, cos o =
2 = H(e j )
H(e j o) =0
2 = /2
or, o = = 2.10 radians
3 j j2
1 + ae + be 2 = 0
2
27. (c) 1 – ja – b = 0
h[n] = 5 [n] – 7 [n – 1] + 7 [n – 3] – 5 [n – 4] From the given options, a = 0 and b = 1.
Now, H(e j ) = 5 – 7e–j + 7e–3j – 5e–4j
Now for = 0, 30. (d)
H(e jo) = 5 – 7 + 7 – 5 = 0 N 1 2
j kn
and for = , X(k) = x(n) e N
H(e j ) = 5 – 7(–1) + 7(–1) – 5(1) n=0
= 5+7–7–5=0 5
System is attenuating low and high frequencies X(1) = x(n) W6n
whereas passing the mid frequencies. So, its a n=0
BPF. 2 3
= x(0) + x(1) W6 + x(2) W6 + x(3) W6
28. Sol. + x(4) W64 + x(5) W65 ...(i)
X(k) = {1, 2, 3, 4, 5, 6, 7, 8} From the given flow graph,
7 2 X(k) = [x(0) – x(3)] a1 + [x(1) – x(4)] a2
j kn
X(k) = x[n] e 8
+ [x(2) – x(5)] a3
n=0
By comparing equations (i) and (ii), we get,
7 j kn 2
a 1 = 1, a2 = W6 , a3 = W6
= x[n] e 4
n=0
31. (a)
3
x[2n] = x[n] x(t) = cos200 t
n=0 n = 0, 2, 4, 6 n
t=
400
1 7
= ( x[n] + ( 1)n x[n]) n
2 n=0 x(n) = cos 200 = cos n
400 2
7
n = 0, 1, ... , 7
x[n] = X(0) = 1
n=0 3
= cos 0, cos , cos , cos ;
2 2
7 7 j 4n
n x[n] e 4 = X(4) = 5 5 7
( 1) x[n] = cos 2 , cos , cos 3 , cos
n=0 n=0 2 2
3 DFT
1 = {1, 0, –1, 0, 1, 0, –1, 0} X( k )
x[2n] = [1 + 5] = 3
n=0
2 Suppose,
DFT
29. (d) y(n) = {1, –1, 1, –1} Y( k )
[Y(k)] = [ WN ] N = 4 [ y(n)]
j n j n
x(n) = c1 e 2 + c2 e 2
1 1 1 1 1
rad/sec.
= 1 j 1 j 1
o 2 = = [0, 0, 4, 0]
1 1 1 1 1
H(e j ) = 1 + ae–j + be–j2
1 j 1 j 1
GATE Previous Years Solved Paper 121
m(t ) M(f )
t
–T0 –T0/6 0 T0/6 T0
–3
f T = 10 sec
–W 0 W
(a) 2.7, 3.4
(a) attenuation of high frequencies in
reproduction. (b) 3.3, 3.6
(b) attenuation of low frequencies in (c) 2.6, 2.7, 3.3, 3.4, 3.6
reproduction. (d) 2.7, 3.3
(c) greater aliasing errors in reproduction. [EC-2003 : 2 Marks]
(d) no harmful effects in reproduction.
Q.6 A 1 kHz sinusoidal signal is ideally sampled at
[EC-1994 : 1 Mark] 1500 samples/sec and the sampled signal is
Q.3 A 1.0 kHz signal is flat-top sampled at the rate passed through an ideal low-pass filter with
of 1800 samples/sec and the samples are cut-off frequency 800 Hz. The output signal has
applied to an ideal rectangular LPF with cut-off the frequency
frequency of 1100 Hz, then the output of the (a) 0 Hz (b) 0.75 Hz
filter contains (c) 0.5 kHz (d) 0.25 kHz
(a) only 800 Hz component. [EC-2004 : 2 Marks]
GATE Previous Years Solved Paper 123
Q.7 A signal m(t) with bandwidth 500 Hz is first (a) 5 Hz and 15 Hz only
multiplied by a signal g(t) where, (b) 10 Hz and 15 Hz only
(c) 5 Hz, 10 Hz and 15 Hz only
g(t ) = ( 1)k (t 0.5 × 10 4
k) (d) 5 Hz only
k=
[EC-2014 : 1 Mark]
The resulting signal is then passed through an
ideal low pass filter with bandwidth 1 kHz. The Q.12 For a given sample-and-hold circuit, if the value
output of the low pass filter would be of the hold capacitor is increased, then
(a) (t) (b) m(t) (a) drop rate decreases and acquisition time
decreases.
(c) 0 (d) m(t) (t)
(b) drop rate decreases and acquisition time
[EC-2006 : 2 Marks]
increases.
Q.8 An LTI system having transfer function (c) drop rate increases and acquisition time
decreases.
s2 + 1
and input x(t) = sin(t + 1) is in steady- (d) drop rate increases and acquisition time
s2 + 2s + 1
increases.
state. The output is sampled at a rate s rad/sec [EC-2014 : 1 Mark]
to obtain the final output {y(k)}. Which of the
following is true?
Q.13 The signal cos 10 t + is ideally sampled at
(a) y is zero for all sampling frequencies s. 4
(b) y is non-zero for all sampling frequencies
a sampling frequency of 15 Hz. The sampled
s. signal is passed through a filter with impulse
(c) y is non-zero for s > 2 but zero for s < 2.
(d) y is non-zero for > 2 but non-zero for sin( t )
s response cos 40 t . The filter
t 2
s < 2.
[EC-2009 : 2 Marks] output is
Q.9 A band-limited signal with a maximum 15
(a) cos 40 t
frequency of 5 kHz is to be sampled. According 2 4
to the sampling theorem, the sampling frequency
15 sin( t )
which is not valid is (b) cos 10 t +
2 t 4
(a) 5 kHz (b) 12 kHz
15
(c) 15 kHz (d) 20 kHz (c) cos 10 t
2 4
[EC-2013 : 1 Mark]
15 sin( t )
Q.10 Consider two real valued signals, x(t) band- (d) cos 10 t
2 t 2
limited to [–500 Hz, 50 Hz] and y(t) band-limited
[EC-2015 : 1 Mark]
to [–1 kHz, 1 kHz]. For z(t) = x(t) y(t), the Nyquist
sampling frequency (in kHz) is ______ . Q.14 Consider a continuous time signal defined as,
[EC-2014 : 1 Mark]
sin t /2
x(t ) = (t 10 n)
Q.11 Let x(t) = cos(10 t) + cos(30 t) be sampled at t /2 n=
20 Hz and reconstructed using an ideal low-
where ‘ ’ denotes the convolution operation
pass filter with cut-off frequency of 20 Hz. The
and ‘t’ is in seconds. The Nyquist sampling rate
frequency/frequencies present in the
(in samples/sec) for x(t) is _______ .
reconstructed signal is/are
[EC-2015 : 2 Marks]
124 Electronics Engineering Signals & Systems
[EC-2016 : 1 Mark]
Q.3 A sinusoidal x(t) of unknown frequency is (a) 2B1 (b) 2(B1 + B2)
sampled by an impulse train of period 20 ms. (c) 4(B1 + B2) (d)
The resulting sample train is next applied to an [EE-2016 : 2 Marks]
ideal low-pass filter with a cut-off at 25 Hz. The
filter output is seen to be a sinusoid of frequency Q.6 The output y(t) of the following system to be
20 Hz. This means that x(t) has a frequency of sampled, so as to reconstruct it from its samples
uniquely. The required minimum sampling rate
(a) 10 Hz (b) 60 Hz
is
(c) 30 Hz (d) 90 Hz
X( )
[EE-2014 : 2 Marks]
Answers
EC Sampling
9. (a) 10. (3) 11. (a) 12. (b) 13. (a) 14. (0.4) 15. (13) 16. (c)
Solutions
EC Sampling
1. (d) 3. (c)
f s = 8000 samples/sec f s = 1800 samples/sec
fm1 = 3 kHz fm = 1000 Hz
fm2 = 6 kHz The spectrum of sampled signal would have
The spectrum of sampled signal would have nfs ± fm
nfs ± fm So, 1000 Hz, 1800 ± 1000 Hz, 3600 ± 1000 Hz ...
So, 3 kHz, 8 ± 3, 16 ± 3, ... = 3 kHz, 5 kHz, So, 1000 Hz, 800 Hz, 2800 Hz, 2600 Hz,
11 kHz, ... 4600 Hz, ...
6 kHz, 8 ± 3, 16 ± 6, ... = 6 kHz, 2 kHz, The cut-off frequency of LPF is 1100 Hz.
14 kHz, ... So, the output of filter will contains 800 Hz and
Cut-off frequencies of LPF = 8 kHz 1000 Hz components.
So, the filter output would have 3 kHz, 6 kHz,
4. (a)
2 kHz and 5 kHz.
Flat top sampling of low pass signals gives rise
2. (a) to aperture effect.
11. (a)
f
x(t) = cos(10 t) + cos(30 t)
–20 kHz 20 kHz
Given sampling frequency,
After low pass filtering with fc = 1 kHz f s = 20 Hz
Output is zero.
s = 40 rad/sec.
8. (a) X( )
s2 + 1
X(s) H (s ) = X(s )
2
s + 2s + 1
–30 –10 10 30
128 Electronics Engineering Signals & Systems
1 (f 20) (f + 20) j
Y( ) = X( k o) H(f ) = rect + rect e 2
2 2 2
k=
After sampling waveform will be Output, Y(f ) = Xs(f ) × H(f )
15
Y( ) y(t) = cos 40 t
2 4
14. Sol.
–70 –50 –30 –10 10 30 50 70 t
sin
–40 40 2
x(t) = [t 10 n]
t n=
Applying an ideal low-pass filter of cut-off
2
frequency of 20 Hz or 40 rad/sec, we get the
frequencies in reconstructed signal as, 10 and
30 rad/sec. or 5 Hz and 15 Hz.
X(f ) = ×
12. (b) f
–0.1 0 0.1 0.2 0.3
–1/4 1/4
We know that, fmax = 0.2 Hz
Q = CV = i t ...(i) f s = 2fmax = 0.4 Hz
CV
t= ...(ii) 15. Sol.
i
If x(t) is a message signal and y(t) is a sampled
From equation (ii),
signal, then y(t) is related to x(t) as,
t C and it is clear that if value of capacitor
increases then the acquisition time increases.
y(t) = x(t ) (t nTs )
For capacitor the drop rate is given as dv/dt, n=
dv
i= C
dt Y(f ) = f s X( f nTs )
dv i n=
=
dt C Spectrum of X(f ) and Y(f ) are as shown
dv 1 X(f )
dt C
From above relation it is clear that if capacitor
value increases drop rate decreases.
f
13. (a) –33 Hz 0 33 Hz
x(t) = cos 10 t +
4 Y(f )
1
[ f 5) + ( f + 5)] e j
X(f ) =
/4
2
After sampling x(t) by 15 Hz, we get –79 Hz –33 Hz –13 Hz 13 Hz 33 Hz 79 Hz
f
= 16 samples/second
17. (b)
x(t) = sin(14000 t) f (kHz)
–5 0 5
fm = 7 kHz
f s = 9000 samples per second The spectrum of the sampled signal can be given
= 9 kHz as,
The spectrum of the sampled signal can be given
as shown below.
S(f )
Frequency response of
LPF with fc = 12 kHz f (kHz)
1 –fs – 5 –fs –fs + 5 –8 –6 –5 0 5 6 8 fs – 5 –fs fs + 5
Answers
EE Sampling
Solutions
EE Sampling
(fs)min = 2 fm 8
f1 = = 4 Hz
(fs)min = 2 × 5 = 10 kHz 2
So, f s 10 kHz 2 = 12 :
12
3. (c) f2 = = 6 Hz
2
Given, impulse train of period 20 ms. and = 14 :
2
1 14
Then, sampling frequency = 3
= 50 Hz f3 = = 7 Hz
20 × 10 2
If the input signal x(t) = cos m (t) having Clearly, highest frequency component of the
spectrum. signal,
X(f ) f(t) = f3 = 7 Hz
Minimum sampling frequency,
f s = 2 × f3
= 2 × 7 = 14 Hz
f
–fm fm 5. (b)
The filtered out sinusoidal signal has 20 Hz Given that:
frequency has sampling must bounded Bandwidth of X1( ) = B1
sampling. The output signal which is an under Bandwidth of X2( ) = B2
sampled signal with sampling frequency
System has h(t ) = e 2 t and input to the system
50 Hz is
is x1(t) x2(t).
X(f )
The bandwidth of x1(t) x2(t) is B1 + B2.
The bandwidth of output will be B1 + B2.
So sampling rate will be 2(B1 + B2).
f
6. (b)
–fm –50 + fm 50 + fm fm
sin(1500 t ) y(t)
x(t) h (t ) =
and 50 – fm = 20 Hz t
X( )
fm = 30 Hz
1 cos(1000 t)
4. Sol.
Method-I: –1000 1000
1
Z( ) = [ X( + 1000 ) + X( 1000 )]
2 1
Z( ) 0.75
0.5
1/2 0.25
t
0
–2000 0 2000
1 t; 1 t 1
Now, x2(t) =
–1500 0 1500 0; otherwise
Thus, H( ) is a low pass filter and it will pass x2(t)
frequency, component of Z( ) upto 1500 rad/s. 1
Y( )
t
–1 1
(rad/sec)
x2(n) = {0, 0.25, 0.5, 0.75, 1, 0.75, 0.5, 0.25, 0}
–1500 1500
Therefore, maximum frequency component of
1
y(t) is
0.75
m = 1500 rad/sec 0.5
or, fm = 750 Hz 0.25
So, the minimum sampling rate for y(t) is t
fs min = 2fm = 2 × 750
0
= 1500 Hz
= 1500 samples/sec. –0.25 0.25
–0.5 0.5
7. (a)
–0.75 0.75
t; 1 t 1
x1(t) = –1 1
0; otherwise
Since x1(n) is having one more non-zero sample
x1(t)
of amplitude ‘1’ as compared to x2(n). Therefore,
1 energy of x1(n) is greater than energy of x2(n).
t
–1 1
Ts = sampling time-period
= 0.25 sec.
x1(n) = {1, 0.75, 0.5, 0.25, 0, 0.25, 0.5, 0.75, 1}
9 Digital Filters
(GATE Previous Years Solved Papers) (a) low-pass filter (b) high-pass filter
(c) band-pass filter (d) band-stop filter
Q.1 A continuous-time filter with transfer function [EC-2016 : 2 Marks]
2s + 6 Q.3 Let h[n] be a length 7 discrete-time finite impulse
H (s) = 2
is converted to a discrete time
s + 6s + 8 response filter, given by:
filter with transfer function, h[0] = 4, h[1] = 3, h[2] = 2, h[3] = 1
h[–1] = –3, h[–2] = –2, h[–3] = –1
2 z 2 0.5032 z
G( s ) = 2 . So that the impulse
z 0.5032 z + k and h[n] is zero for n 4. A length-3 finite
impulse response approximation g[n] of h[n] has
response of the continuous-time filter, sampled
to be obtained such that,
at 2 Hz, is identical at the sampling instants to
the impulse response of the discrete time filter. 2
E( h , g ) = H ( e j ) G( e j ) d
The value of ‘k’ is ______ .
[EC-2016 : 2 Marks]
is minimized, where H(e j ) and G(e j ) are the
Q.2 The direct form structure of an FIR (Finite discrete time Fourier transforms of h[n] and g[n],
Impulse Response) filter is shown in the figure. respectively. For the filter that minimizes E(h, g),
the value of 10g[–1] + g[1] rounded off to two
Unit Unit
x[n]
delay delay decimal places, is _______ .
[EC-2019 : 2 Marks]
5 5
–
+
y[n]
GATE Previous Years Solved Paper 133
Answers
EC Digital Filters
Solutions
EC Digital Filters
1. Sol.
= 0; H(e j ) = 0
2s + 6 1 1
Given, H(s) = 2
= +
s + 6s + 8 s+2 s+4 = ; H ( e j ) = 10
2
h(t) = e–2t u(t) + e–4t u(t)
Given, f s = 2 Hz = , H(e j ) = 0
For discrete time,
The given one is band-pass filter.
n
t = nTs =
2 3. Sol.
–n –2n
h[n] = (e + e ) u[n] From Parseval’s theorem,
1 1
H(z) = + 2 1 2
1 e 1
Z 1
1 e 2Z 1 x[n] = X( e j ) d
n=
2
Z Z
= 1
+ 2 2 3
2
Z e Z e So, H ( e j ) G( e j ) d = 2 h( n ) g( n )
n= 3
2Z 2 0.5032 Z
= The solution of g(n) that minimizes E(h, g) also
Z2 0.5032 Z + 0.049
3
K = 0.049 2
minimizes, h(n) g(n) .
n= 3
2. (c)
y[n] = 5x[n] – x[n – 2]] 3
2
h(n) g(n) = 4 g(0) 2 + 3 g(1) 2
Y ( z) 2
H(z) = = 5[1 z ] n= 3
X( z)
2
But, z = ej + 3 g( 1) + 10
H(e ) = 5[1 – e–j2 ]
j
The solution of g(n) that minimizes the above
equation is,
H(e j )
g(n) = { 3, 4, 3}
10
So, 10g(–1) + g(1) = 10(–3) + 3
= –27
0 /2
GATE-2023
Electronics Engineering
Contents
S.No. Topic Page No.
Q.1 Consider two energy levels: E1, E ev above the Q.5 Due to illumination by light, the electron and
Fermi level and E2, E ev below the Fermi level. P1 hole concentrations in a heavily doped N type
and P2 are respectively the probability of E1 semiconductor increases by n and p
being occupied by an electron and E2 being respectively if ni is the intrinsic concentration
empty. Then, then,
(a) P1 > P2 (a) n< p (b) n> p
(b) P1 = P2
(c) n= p (d) n × p = ni2
(c) P1 < P2
(d) P1 and P2 depend on number of free electrons [EC-1989 : 2 Marks]
Q.3 According to the Einstein relation, for any Q.7 Under high electric fields, in a semiconductor
semiconductor the ratio of diffusion constant to with increasing electric field,
mobility of carriers (a) the mobility of charge carriers decreases.
(a) depends upon the temperature of the (b) the mobility of charge carriers increases.
semiconductor. (c) the velocity of the charge carriers saturates.
(b) depends upon the type of the semiconductor. (d) the velocity of the charge carriers increases.
(c) varies with life time of the semiconductor. [EC-1990 : 2 Marks]
(d) is a universal constant.
Q.8 A silicon sample is uniformly doped with 1016
[EC-1987 : 2 Marks] phosphorus atoms/cm3 and 2 × 1016 boron
Q.4 Direct band gap semiconductors atoms/cm3. If all the dopants are fully ionized,
(a) exhibit short carrier life time and they are the material is
used for fabricating BJT’s. (a) n-type with carrier concentration of
(b) exhibit long carrier life time and they are 1016/cm3.
used for fabricating BJT’s. (b) p-type with carrier concentration of
(c) exhibit short carrier life time and they are 1016/cm3.
used for fabricating lasers. (c) p-type with carrier of 2 × 1016/cm3.
(d) exhibit long carrier life time and they are (d) n-type with a carrier concentration of
used for fabricating lasers. 2 × 1016/cm3.
[EC-1987 : 2 Marks] [EC-1991 : 2 Marks]
2 Electronics Engineering Electronic Devices & Circuits
Q.9 A semiconductor is irradiated with light such Q.14 A small concentration of minority carries is
that carriers are uniformly generated throughout injected into a homogeneous semiconductor
its volume. The semiconductor is n-type with crystal at one point. An electric field of 10 V/cm
N D = 10 19 /cm 3 . If the excess electron is applied across the crystal and this moves the
concentration in the steady-state is minority carries a distance of 1 cm in 20 µsec.
n = 1016/cm3 and if p = 10 µsec. (minority The mobility (in cm2/V-sec) will be
carriers life time) the generation rate due to (a) 1,000 (b) 2,000
irradiation (c) 5,000 (d) 500,000
(a) is 1020 e-h pairs/cm3/s. [EC-1995 : 1 Mark]
(b) is 1024 e-h pairs/cm3/s.
Q.15 The units of q/KT are
(c) is 1010 e-h pairs/cm3/s.
(a) V (b) V–1
(d) cannot be determined, the given data is
(c) J (d) J/K
insufficient.
[EC-1997 : 1 Mark]
[EC-1992 : 2 Marks]
Q.16 The intrinsic carrier density at 300 K is
Q.10 A p-type silicon sample has a higher
1.5 × 1010/cm3, in silicon for n-type doped to
conductivity compared to an n-type silicon
2.25 × 1015 atoms/cm3, the equilibrium electron
sample having the same dopant concentration.
and hole densities are
(True/False)
(a) n = 1.5 × 1015, p = 1.5 × 1010/cm3
[EC-1994 : 1 Mark]
(b) n = 1.5 × 1010, p = 2.25 × 1015/cm3
Q.11 The drift velocity of electrons, in silicon (c) n = 2.25 × 1015, p = 1.0 × 105/cm3
(a) is proportional to the electric field for all
(d) n = 1.5 × 1010, p = 1.5 × 1010/cm3
values of electric field.
[EC-1997 : 2 Marks]
(b) is independent of the electric field.
(c) increases at low values of electric field and Q.17 The electron concentration in a sample of non-
decreases at high values of electric field uniformly doped n-type silicon at 300 K varies
exhibiting negative differential resistance. linearly from 1017/cm3 at x = 0 to 6 × 1016/cm3
(d) increases linearly with electric field at low at x = 2 µm. Assume a situation that electrons
values of electric field and gradually are supplied to keep this concentration gradient
saturates at higher values of electric field. constant with time. If electronic charge is
[EC-1995 : 1 Mark] 1.6 × 10–19 Coulomb and the diffusion constant
Dn = 35 cm2/s, the current density in the silicon,
Q.12 The probability that an electron in a metal
if no electric field is present is
occupies the Fermi level, at any temperature.
(a) zero (b) 120 A/cm2
(T > 0 K)
(c) +1120 A/cm2 (d) –1120 A/cm2
(a) 0 (b) 1
(c) 0.5 (d) 1.0 [EC-1997 : 2 Marks]
[EC-1995 : 1 Mark] Q.18 An n-type silicon bar 0.1 cm long and 100 µm2
in cross-sectional area has a majority carrier
Q.13 In a p-type Si simple the hole concentration is
concentration of 5 × 1020/m3 and the carrier
2.25 × 10 15 /cm 3 . The intrinsic carrier
mobility is 0.13 m2/V-s at 300 K. If the charge of
concentration is 1.5 × 1010/cm3 the electron
an electron is 1.6 × 10–19 Coulomb, then the
concentration is
resistance of the bar is
(a) zero (b) 1010/cm3
(a) 106 (b) 104
(c) 105/cm3 (d) 1.5 × 1025/cm3 –1
(c) 10 (d) 10–4
[EC-1995 : 1 Mark] [EC-1997 : 2 Marks]
GATE Previous Years Solved Paper 3
Q.19 The unit of q/KT are Q.26 The neutral base width of a bipolar transistor,
(a) V (b) V–1 biased in the active region, is 0.5 µm. The
(c) J (d) J/K maximum electron concentration and the
[EC-1998 : 1 Mark] diffusion constant in the base are 1014/cm3 and
Dn = 125 cm 2/sec respectively. Assuming
Q.20 n-type silicon is obtained by doping silicon with negligible recombination in the base, the collector
(a) Germanium (b) Aluminium current density is (the electron charge is
(c) Boron (d) Phosphorus 1.6 × 10–19 Coulomb)
[EC-2003 : 1 Mark] (a) 800 A/cm2 (b) 8 A/cm2
Q.21 The band gap of silicon at 300 K is (c) 200 A/cm2 (d) 2 A/cm2
(c) 0.80 eV (d) 0.67 eV Q.27 The bandgap of silicon at room temperature is
[EC-2003 : 1 Mark] (a) 1.3 eV (b) 0.7 eV
Q.22 The intrinsic carrier concentration of silicon (c) 1.1 eV (d) 1.4 eV
sample at 300 K is 1.5 × 1016/m3. If after doping, [EC-2005 : 1 Mark]
the number of majority carriers is 5 × 1020/m3,
Q.28 The primary reason for the widespread use of
the minority carrier density is
silicon in semiconductor device technology is
(a) 4.50 × 1011/m3 (b) 3.33 × 104/m3
(a) abundance of silicon on the surface of the
(c) 5.00 × 1020/m3 (d) 3.00 × 10–5/m3 Earth.
[EC-2003 : 1 Mark] (b) larger bandgap of silicon in comparison to
Q.23 The impurity commonly used for realizing the Germanium.
base region of a silicon n-p-n transistor is (c) favorable properties of silicon-dioxide
(a) Gallium (b) Indium (SiO2).
(c) Boron (d) Phosphorus (d) lower melting point.
[EC-2004 : 1 Mark] [EC-2005 : 1 Mark]
Q.24 The resistivity of a uniformly doped n-type Q.29 A silicon sample A is doped with 1018 atoms/
silicon sample is 0.5 -cm. If the electron cm3 of Boron. Another sample B of identical
mobility (µn) is 1250 cm2/V-sec and the charge dimensions is doped with 1018 atoms/cm3 of
of an electron is 1.6 × 10–19 Coulomb, the donor phosphorus. The ratio of electron to hole
impurity concentration (ND) in the sample is mobility is 3. The ratio of conductivity of the
(a) 2 × 1016/cm3 (b) 1 × 1016/cm3 sample A to B is
(c) 2.5 × 1015/cm3 (d) 2 × 1015/cm3 1
(a) 3 (b)
[EC-2004 : 2 Marks] 3
T = 300 K, electronic charge = 1.6 × 10–19 C, thermal Q.43 A silicon bar is doped with donor impurities
voltage = 26 mV and electron mobility = 1350 cm2/V-s. ND = 2.25 × 1015 atoms/cm3. Given the intrinsic
carrier concentration of silicon at T = 300 K is
n i = 1.5 × 10 10 cm –3 . Assuming complete
1V
impurity ionization, the equilibrium electron
16 3
ND = 10 /cm and hole concentrations are:
(a) n0 = 1.5 × 1016 cm–3, p0 = 1.5 × 105 cm–3
x=0 x = 1 µm (b) n0 = 1.5 × 1010 cm–3, p0 = 1.5 × 1015 cm–3
(c) n0 = 2.25 × 1015 cm–3, p0 = 1.5 × 1010 cm–3
Q.39 The magnitude of the electric field at x = 0.5 µm
is (d) n0 = 2.25 × 1015 cm–3, p0 = 1 × 105 cm–3
Q.47 At T = 300 K, the hole mobility of a Q.51 Consider a silicon sample doped with
semiconductor µ p = 500 cm/V-s and ND = 1 × 1015/cm3 donor atoms. Assume that
the intrinsic carrier concentration
kT
= 26 mV. The hole diffusion constant Dp in ni = 1.5 × 1010/cm3. If the sample is additionally
q
doped with NA = 1 × 1018/cm3 acceptor atoms,
cm2/s is ______ .
the approximate number of electrons/cm3 in the
[EC-2014 : 1 Mark]
sample, at T = 300 K, will be ______ .
Q.48 A T = 300 K, the bandgap and the intrinsic [EC-2014 : 2 Marks]
carrier concentration of GaAs are 1.42 eV and
106 cm–3, respectively. In order to generate Q.52 An N-type semiconductor having uniform
electron hole pairs in GaAs, which one of the doping is biased as shown in the figure.
wavelength ( C) ranges of incident radiation, is
most suitable? (Given that: Plank’s constant is V
6.62 × 10–34 J-s, velocity of light is 3 × 1010 cm/s
and charge of electron is 1.6 × 10–19 C) N-type semiconductor
ln ( i) EC
EF
EC
(c) EV (d)
EF
EV
[EC-2014 : 2 Marks]
1/T
The slope of the line can be used to estimate Q.53 A silicon sample is uniformly doped with donor
(a) bandgap energy of silicon (Eg). type impurities with a concentration of
(b) sum of electron and hole mobility in silicon 1016/cm3. The electron and hole mobilities in
(µn + µp). the sample are 1200 cm2/V-s and 400 cm2/V-s
(c) reciprocal of the sum of electron and hole respectively. Assume complete ionization of
mobility in silicon (µn + µp)–1. impurities. The charge of an electron is
(d) intrinsic carrier concentration of silicon (ni). 1.6 × 10 –19 C. The resistivity of the sample
(in -cm) is ________ .
[EC-2014 : 1 Mark]
[EC-2015 : 1 Mark]
Q.50 The cut-off wavelength (in µm) of light that can
be used for intrinsic excitation of a Q.54 A piece of silicon is doped uniformly with
semiconductor material of bandgap, Eg = 1.1 eV phosphorous with a doping concentration of
is _______ . 1016/cm3. The expected value of mobility versus
[EC-2014 : 1 Mark] doping versus doping concentration for silicon
GATE Previous Years Solved Paper 7
assuming full dopant ionization is shown (a) –4.4 × 10–2 (b) –2.2 × 10–2
below. The charge of an electron is 1.6 × 10–19 C. (c) 0 (d) 2.2 × 10–2
The conductivity (in S cm –1) of the silicon [EC-2015 : 2 Marks]
sample at 300 k is ______ .
Q.57 A dc voltage of 10 V is applied across an n-type
Hole and Electron Mobility in Silicon at 300 K
silicon bar having a rectangular cross-section
1400
Electron Hole and length of 1 cm as shown in figure. The donor
1200
doping concentration ND and the mobility of
s )
–1
1000
–1
800
2
600
400
the electrons to move from one end of the bar to
200
other end is _______ .
EV
[EC-2016 : 1 Mark]
x=0 x x=0 x
8 Electronics Engineering Electronic Devices & Circuits
Q.59 The figure below shows the doping distribution (c) Silicon atoms acts as p-type dopants in
in a p-type semiconductor in log scale. Arsenic as well as Gallium sites.
(d) Silicon atoms acts as n-type dopants in
Arsenic as well as Gallium sites.
16
–3
10 [EC-2017 : 1 Mark]
NA (cm )
14
10 Q.62 As shown, a uniformly doped Silicon (Si) bar of
1 2
length L = 0.1 µm with a donor concentration
Position (µm) ND = 1016 cm–3 is illuminated at x = 0 such that
The magnitude of the electric field (in kV/cm) electron and hole pairs are generated at the rate of
in the semiconductor due to non-uniform x
doping is _______ . GL0 1 , 0 x L
L
[EC-2016 : 2 Marks]
where GL 0 = 1017 cm 3
s 1 . Hole lifetime is
Q.60 Consider a silicon sample at T = 300 K, with a
uniform donor density Nd = 5 × 10 16 cm–3, 10–4 s, electronic charge q = 1.6 × 10–19 C, hole
illuminated uniformly such that the optical diffusion coefficient Dp = 100 cm2/s and low
generation rate is Gopt = 1.5 × 1020 cm–3 s–1 level injection condition prevails. Assuming a
throughout the sample. The incident radiation linearly decaying steady-state excess hole
is turned-off at t = 0. Assume low-level injection concentration that goes to 0 at x = L, the
to be valid and ignore surface effects. The carrier magnitude of the diffusion current density at
lifetimes are p0 = 0.1 µs and n0 = 0.5 µs . x = L/2, (in A/cm2), is _______ .
Light
16 –3
Si (ND = 10 cm )
x=0 L = 0.1 µm
n-type Si
[EC-2017 : 2 Marks]
The hold concentration at t = 0 and the hole Q.63 The dependence of drift velocity of electrons on
concentration at t = 0.3 µs, respectively are electric field in a semiconductor is shown below.
(a) 1.5 × 1013 cm–3 and 7.47 × 1011 cm–3 The semiconductor has a uniform electron
(b) 1.5 × 1013 cm–3 and 8.23 × 1011 cm–3 concentration of n = 1 × 1016 cm–3 and electronic
(c) 7.5 × 1013 cm–3 and 3.73 × 1011 cm–3 charge q = 1.6 × 10–19 C. If a bias of 5 V is applied
(d) 7.5 × 1013 cm–3 and 4.12 × 1011 cm–3 across a 1 µm region of this semiconductor, the
[EC-2016 : 2 Marks] resulting current density in this region,
(in kA/cm2), is _______ .
Q.61 A bar of Gallium Arsenide (GaAs) is doped with
Drift velocity (cm/s)
Silicon such that the Silicon atoms occupy
Gallium and Arsenic sites in the GaAs crystal. Constant
7
Which one of the following statements is true? 10
sites.
(b) Silicon atoms acts as n-type dopants in 0 5 × 10
5
Electric field (V/cm)
Arsenic sites and p-type dopants in Gallium
sites. [EC-2017 : 2 Marks]
GATE Previous Years Solved Paper 9
Q.64 A single crystal intrinsic semiconductor is at a respectively. The left side of the bar (x = 0) is
temperature of 300 K with effective density of uniformly illuminated with a laser having
states for holes twice that of electrons. The photon energy greater than the bandgap of the
thermal voltage is 26 mV. The intrinsic Fermi semiconductor. Excess electron hole pairs are
level is shifted from mid-bandgap energy generated only at x = 0 because of the laser. The
level by steady-state electron density at x = 0 is 1014 cm–3
(a) 13.45 meV (b) 18.02 meV due to laser illumination. Under these
conditions and ignoring electric field, the closest
(c) 26.90 meV (d) 9.01 meV
approximation (among the given options) of the
[EC-2020 : 1 Mark]
steady-state electron density at x = 2 µm, is
Q.65 A bar of silicon is doped with boron _________ .
concentration of 1016 cm–3 and assumed to be (a) 0.37 × 1014 cm–3 (b) 0.63 × 1013 cm–3
fully ionized. It is exposed to light such that (c) 3.7 × 1014 cm–3 (d) 103 cm–3
electron hole pairs are generated throughout the [EC-2022]
volume of the bar at the rate of 1020 cm–3 s–1. If
Q.67 Select the correct statement(s) regarding
the recombination lifetime is 100 µs, intrinsic
semiconductor devices:
carrier concentration of silicon is 1010 cm–3 and
assuming 100% ionization of boron, then the (a) Electrons and holes are of equal density in
approximate product of steady-state electron an intrinsic semiconductor at equilibrium.
and hole concentrations due to this light (b) Collector region is generally more heavily
exposure is, doped than base region in a BJT.
(a) 1032 cm–6 (b) 2 × 1020 cm–6 (c) Total current is spatially constant in a two
(c) 2× 1032 cm–6 (d) 1020 cm–6 terminal electronic device in dark under
steady-state condition.
[EC-2021 : 1 Mark]
(d) Mobility of electrons always increases with
Q.66 Consider a long rectangular bar of direct temperature in silicon beyond 300 K.
bandgap p-type semiconductor. The equilibrium
[EC-2022]
hole density is 1017 cm–3 and the intrinsic carrier
concentration is 1010 cm–3. Electron and hole
diffusion lengths are 2 µm and 1 µm,
10 Electronics Engineering Electronic Devices & Circuits
9. (a) 10. (False) 11. (d) 12. (c) 13. (c) 14. (c) 15. (b) 16. (c)
17. (d) 18. (a) 19. (b) 20. (d) 21. (b) 22. (a) 23. (c) 24. (b)
25. (a) 26. (b) 27. (c) 28. (a) 29. (b) 30. (b) 31. (a) 32. (b)
33. (d) 34. (d) 35. (a) 36. (c) 37. (c) 38. (a) 39. (c) 40. (a)
41. (c) 42. (a) 43. (d) 44. (4000) 45. (b) 46. (d) 47. (13) 48. (a)
49. (a) 50. (1.12) 51. (225.2) 52. (d) 53. (0.52) 54. (1.92) 55. (14) 56. (c)
57. (100) 58. (a) 59. (1.198) 60. (a) 61. (a) 62. (16) 63. (1.6) 64. (d)
65. (c) 66. (a) 67. (a, c)
2. (c) µ = Mobility
By mass action law, Dn = Electron diffusion constant
Dp = Hole diffusion constant
n p = ni2
µn = Electron mobility
ni = intrinsic carrier concentration
µp = Hole mobility
p = hole concentration
n = electron concentration 4. (c)
q 19. (b)
So, V–1
KT KT
Thermal voltage = VT =
q
16. (c)
q
n = 2.25 × 1015 So, V 1
KT
p = 1.0 × 105/cm3
For n-type semiconductor, 22. (a)
Electron density = n = ND
ni2 = np
= 2.25 × 1015 atoms/cm3
Given that, intrinsic carrier concentration = ni ni = Intrinsic concentration
= 1.5 × 10/cm3 ni2 1.5 × 10 16 × 1.5 × 10 16
p = =
Q n>>ni n 5 × 10 20
= 45 × 1010 = 4.5 × 1011/cm3
GATE Previous Years Solved Paper 13
n nµn
1 1 =
ND = = 19 i ni (µn + µ p )
q µn p 1.6 × 10 × 1250 × 0.5
= 1016/cm3 4.2 × 108 × µn
=
µp
25. (a) 1.5 × 10 4 × µn 1 +
µn
1.24
Eg = eV
(µm) 4.2 × 108
= 4
= 2 × 10 4
1.5 × 10 × 1.4
1.24
= eV = 1.425 eV
0.87 µm 34. (d)
By the law of electrical neutrality,
26. (b)
p + ND = n + NA
dn As, ND = 0
JC = qDn
dx NA >> ni 0,
19 10 14 p = NA
= 1.6 × 10 × 25 ×
0.5 × 10 4 Using mass action law,
JC = 8 A/cm2 np = ni2
29. (b) ni2 n2
So, n= = i
n = nqµn p NA
p µp 1
= = 36. (c)
n µn 3
Since, boron is p-type impurity, therefore, Fermi-
30. (b) level goes down.
2 NA
np = ni Ei – Ef = kT ln
ni
ni = constant
For n-type ‘p’ is minority carrier concentration, 3 4 × 1017
= 25 × 10 ln
1.5 × 1010
ni2
p = = 0.427 eV
n
1 37. (c)
p
n In an N-type silicon crystal at room temperature,
n Nd
32. (b) and by mass action law,
Hall effect:
n p = ni2
Electric force + magnetic force = 0
qE + qv + B = 0 (1.5 × 10)2
p = = 5.625 cm 3
E = –v × B 4 × 1019
E = B×v and n>>p
14 Electronics Engineering Electronic Devices & Circuits
42. (a) N A + ND xn + x p
=
The electron concentration at the edge of the ND xp
depletion region on the p-side is given by 1017 3 µm
qV f 16 =
10 xp
np = npo = exp
kT x p = 0.3 µm
qN A x p qN D xn
ni2 and Emax = =
where, npo =
NA s s
19
1.6 × 10 × 9 × 1016 × 0.3 × 10 4
(1.5 × 1010 )2 Emax =
npo = 1.04 × 10 12
1016
= 4.15 × 105 V/cm
= 2.25 × 104 cm–3
we then have, 47. Sol.
0.3 Dp
np = 2.25 × 10 4 exp
0.026 = VT
µp
np = 2.25 × 104
× 1.025 × 105
Dp = µpVT
np = 2.306 × 10 cm–3
9
= 500 × 26 × 10–3
Dp = 13 cm2/s
GATE Previous Years Solved Paper 15
63. Sol.
n P0
V 5
E = = = 5 × 10 4 V/cm
d 10 4 nP0 3 –3
nP0 = n0 = 10 cm
x
GATE Previous Years Solved Paper 17
Excess electron concentration at any distance • Total current is spatially constant in a two
‘x’ is, terminal electronic device, however
x / Ln individual currents vary spatially under
nP(x) = nP 0 e
dark and steady-state condition.
= 1014 e–2/2 = 1014 e–1 • Beyond 300 K, mobility of electron decreases
= 3.67 × 1013 cm–3 with increases in temperature.
= 0.367 × 1014 cm–3
Hence, statement(s): (a) and (c) are correct.
67. (a, c)
• In intrinsic semiconductor at equilibrium,
n = p = ni.
• Collector region is generally lightly doped
than base region in a BJT.
2 PN - Junction Diodes and
Special Diodes
Q.1 The diffusion capacitance of a p-n junction KT I
(c) V = sin h 1
(a) decreases with increasing current and q 2
increasing temperature.
KT
(b) decreases with decreasing current and (d) V = [exp( I ) 1]
q
increasing temperature.
[EC-1988 : 2 Marks]
(c) increases with increasing current and
increasing temperature. Q.4 The switching speed of P+N junction (having a
(d) does not depend on current and heavily doped P region) depends primarily on
temperature. (a) the mobility of minority carriers in the P+
[EC-1987 : 2 Marks] region.
(b) the lifetime of minority carriers in the P+
Q.2 For an pn-junction match the type of breakdown region.
with phenomenon:
(c) the mobility of majority carriers in the N
1. Avalanche breakdown region.
2. Zener breakdown (d) the lifetime of majority carriers in the N
3. Punch through region.
A. Collision of carriers with crystal ions [EC-1989 : 2 Marks]
B. Early effect
Q.5 In a Zener diode
C. Rupture of covalent bond due to strong (a) only the P region is heavily doped.
electric field.
(b) only the N region is heavily doped.
(a) 1-B, 2-A, 3-C (b) 1-C, 2-A, 3-B
(c) both P and N regions are heavily doped.
(c) 1-A, 2-B, 3-C (d) 1-A, 2-C, 3-B (d) both P and P regions are lightly doped.
[EC-1988 : 2 Marks] [EC-1989 : 2 Marks]
Q.3 In the circuit shown below the current voltage Q.6 In a junction diode
relationship when D1 and D2 are identical is (a) the depletion capacitance increases with
given by (Assume Ge diodes) increase in the reverse bias.
+ (b) the depletion capacitance decreases with
D1 increase in the reverse bias.
I
(c) the depletion capacitance increases with
D2
increase in the forward bias.
(d) the depletion capacitance is much higher
V than the depletion capacitance when it is
+ forward biased.
[EC-1990 : 1 Mark]
KT I
(a) V = sin h
q 2 Q.7 In a uniformly doped abrupt p-n junction the
doping level of the n-side is four (4) times the
KT I doping level of the p-side the ratio of the
(b) V = ln
q Io depletion layer width of n-side verses p-side is
GATE Previous Years Solved Paper 19
(a) 0.25 (b) 0.5 (c) does not depend on doping concentrations.
(c) 1.0 (d) 2.0 (d) increases with increase in doping
[EC-1990 : 2 Marks] concentration.
[EC-1995 : 1 Mark]
Q.8 The small signal capacitance of an abrupt P+ n
junction is 1 nf/cm2 at zero bias. If the built-in Q.12 A Zener diode works on the principle of
voltage is 1 volt, the capacitance at a reverse (a) tunneling of charge carriers across the
bias voltage of 99 volts in junction.
(a) 10 (b) 0.1 (b) thermionic emission.
(c) 0.01 (d) 100 (c) diffusion of charge carriers across the
[EC-1991 : 2 Marks] junction.
(d) hopping of charge carriers across the
Q.9 Referring to the below figure the switch ‘S’ is in
junction.
position 1 initially and steady-state condition
exist from time t = 0 to t = t0 , the switch is [EC-1995 : 1 Mark]
suddenly thrown into position 2. The current Q.13 The depletion capacitance, CJ of an abruptly p-n
‘I’ through the 10 K resistor as a function of time junction with constant doping on either side
t, from t = 0 is (Given the sketch showing the varies with R.B. VR as,
magnitudes of the current at t = 0, t = t0 and
t = ). (c) CJ VR (b) C J VR 1
Q.25 The values of voltage (VD) across a tunnel-diode (b) the edge of the depletion region on the
corresponding to peak and valley currents are n-side.
Vp and Vv respectively. The range of tunnel- (c) the p+n junction.
diode voltage VD for which the slope of its I – VD (d) the center of the depletion region on the
characteristics is negative would be n-side.
(a) VD < 0 (b) 0 VD < Vp [EC-2007 : 1 Mark]
(c) Vp VD < VV (d) VD VV
Q.29 Group-I lists four types of p-n junction diodes.
[EC-2006 : 1 Mark]
Match each device in Group-I with one of the
Q.26 In the circuit shown below, the switch was options in Group-II to indicate the bias
connected to position 1 at t < 0 and at t = 0, it is condition of that device in its normal mode of
changed to position 2. Assume that the diode operation:
has zero voltage drop and a storage time ts. For Group-I Group-II
0 < t ts, vR is given by (all in Volts) P. Zener diode 1. Forward bias
1 Q. Solar cell 2. Reverse bias
R. LASER diode
+
2 S. Avalanche photodiode
(a) P-1, Q-2, R-1, S-2
5V
1k vR
(b) P-2, Q-1, R-1, S-2
(c) P-2, Q-2, R-2, S-1
– (d) P-2, Q-1, R-2, S-2
[EC-2007 : 2 Marks]
(a) vR = –5 (b) vR = +5
(c) 0 vR < 5 (d) –5 < vR < 0 Q.30 Group-I lists four different semiconductor
[EC-2006 : 2 Marks] devices. Match each device in Group-I with its
characteristic property in Group-II:
Q.27 Find the correct match between Group-I and
Group-I Group-II
Group-II:
P. BJT 1. Population inversion
Group-I Group-II
Q. MOS capacitor 2. Pinch-off voltage
E. Varactor diode 1. Voltage reference
R. LASER diode 3. Early effect
F. PIN diode 2. High-frequency switch
S. JFET 4. Flat-band voltage
G. Zener diode 3. Tuned circuits
(a) P-3, Q-1, R-4, S-2
H. Schottky diode 4. Current controlled
(b) P-1, Q-4, R-3, S-2
attenuator
(c) P-3, Q-4, R-1, S-2
(a) E-4, F-2, G-1, H-3
(d) P-3, Q-2, R-1, S-4
(b) E-2, F-4, G-1, H-3
[EC-2007 : 2 Marks]
(c) E-3, F-4, G-1, H-2
(d) E-1, F-3, G-2, H-4 Q.31 A p+n junction has a built-in potential of 0.8 V.
[EC-2006 : 2 Marks] The depletion layer width at a reverse bias of
1.2 V is 2 µm. For a reverse bias of 7.2 V, the
Q.28 In a p+n junction diode under reverse bias, the depletion layer width will be
magnitude of electric field is maximum at
(a) 4 µm (b) 4.9 µm
(a) the edge of the depletion region on the
(c) 8 µm (d) 12 µm
p-side.
[EC-2007 : 2 Marks]
22 Electronics Engineering Electronic Devices & Circuits
Q.32 Which of the following is not associated with a (c) 1.80 MV-cm–1, directed from p-region to
p-n junction? n-region.
(a) Junction capacitance (d) 1.80 MV-cm–1, directed from n-region to
(b) Charge storage capacitance p-region.
(c) Depletion capacitance [EC-2009 : 2 Marks]
(d) Channel length modulation
Q.36 Compared to a p-n junction with
[EC-2008 : 1 Mark]
NA = ND = 1014/cm3, which one of the following
Q.33 Consider the following assertions: statements is true for a p-n junction with
S1 : For Zener effect to occur, a very abrupt NA = ND = 1020/cm3?
junction is required. (a) Reverse breakdown voltage is lower and
S2 : For quantum tunneling to occur, a very depletion capacitance is lower.
narrow energy barrier is required. (b) Reverse breakdown voltage is higher and
Which of the following is correct? depletion capacitance is lower.
(a) Only S2 is true. (c) Reverse breakdown voltage is lower and
(b) S1 and S2 are both true but S2 is not a reason depletion capacitance is higher.
for S1. (d) Reverse breakdown voltage is higher and
(c) S1 and S2 are both true and S2 is a reason for depletion capacitance is higher.
S1. [EC-2010 : 2 Marks]
(d) Both S1 and S2 are false.
Q.37 A silicon pn-junction is forward biased with a
[EC-2008 : 2 Marks]
constant current at room temperature. When the
Common Data for Questions (34 and 35): temperature is increased by 10°C, the forward
Consider a silicon p-n junction at room temperature bias voltage across the pn-junction
having the following parameters: (a) increases by 60 mV
Doping on the n-side = 1 × 1017 cm–3 (b) decreases by 60 mV
Depletion width on the n-side = 0.1 µm (c) increases by 25 mV
Depletion width on the p-side = 1.0 µm (d) decreases by 25 mV
Intrinsic carrier concentration = 1.4 × 1010 cm–3 [EC-2011 : 1 Mark]
Thermal voltage = 26 mV
Q.38 A Zener diode, when used in voltage
Permittivity of free space = 8.85 × 10–14 F-cm–1
stabilization circuits, is biased in
Dielectric constant of silicon = 12
(a) reverse bias region below the breakdown
Q.34 The built-in potential of the junction voltage.
(a) is 0.70 V. (b) reverse breakdown region.
(b) is 0.76 V. (c) forward bias region.
(c) is 0.82 V. (d) forward bias constant current mode.
(d) cannot be estimated from the data given. [EC-2011 : 1 Mark]
[EC-2009 : 2 Marks]
Q.35 The peak electric field in the device is Q.39 In a forward biased pn-junction, the sequence
(a) 0.15 MV-cm–1, directed from p-region to of events that best describes the mechanism of
n-region. current flow is
(b) 0.15 MV-cm–1, directed from n-region to (a) injection, and subsequent diffusion and
p-region. recombination of minority carriers.
GATE Previous Years Solved Paper 23
(b) injection, and subsequent drift and (a) both the P-region and the N-region are
generation of minority carriers. heavily doped.
(c) extraction, and subsequent diffusion and (b) the N-region is heavily doped compared to
generation of minority carriers. the P-region.
(d) extraction, and subsequent drift and (c) the P-region is heavily doped compared to
recombination of minority carriers.
the N-region.
[EC-2013 : 1 Mark]
(d) an intrinsic silicon region is inserted
Q.40 When the optical power incident on a between the P-region and the N-region.
photodiode is 10 µW and the respectively is [EC-2015 : 1 Mark]
0.8 A/W, the photocurrent generated (in µA), is
________ . Q.44 The built-in potential of an abrupt p-n junction
[EC-2014 : 1 Mark] is 0.75 V. If its junction capacitance (CJ) at a
reverse bias (VR) of 1.25 V is 5 pF, the value of CJ
Q.41 Consider an abrupt PN junction (at T = 300 K)
(in pF) when VR = 7.25 V is ______ .
shown in the figure. The depletion region width
[EC-2015 : 2 Marks]
xn on the N-side of the junction is 0.2 µm and the
permittivity of silicon ( si) is 1.044 × 10–12 F/cm. Q.45 For a silicon diode with long P and N regions,
At the junction, the approximate value of the the acceptor and donor impurity concentrations
peak electric field (in kV/cm) is _______ . are 1 × 1017 cm–3 and 1 × 1015 cm–3, respectively.
The lifetimes of electrons in P-region and holes
in N-region are both 100 µs. The electron and
+
P -region N-region
xn 16 3 hole diffusion coefficients are 49 cm2/s and
NA >> ND NA = 10 /cm
36 cm2/s, respectively. Assume kT/q = 26 mV,
[EC-2014 : 2 Marks] the intrinsic carrier concentration is
1 × 1010 cm–3, and q = 1.6 × 10–19 C. When a
Q.42 The donor and acceptor impurities in an abrupt
forward voltage of 208 mV is applied across the
junction silicon diode are 1 × 1016 cm–3 and
diode, the hole current density (in nA/cm)2
5 × 1018 cm–3, respectively. Assume that the
injected from P-region to N-region is ______ .
intrinsic carrier concentration in silicon
[EC-2015 : 2 Marks]
kT
ni = 1.5 × 1010 cm–3 at 300 K, =26 mV & the Q.46 The electric field profile in the depletion region
q
of a p-n junction in equilibrium is shown in the
permittivity of silicon si = 1.04 × 10–12 F/cm.
The built-in potential and the depletion width figure. Which one of the following statements is
of the diode under thermal equilibrium not true?
conditions, respectively, are E(V/cm)
(a) 0.7 V and 1 × 10–4 cm 10
4
x=0 x=L
GATE Previous Years Solved Paper 25
Given: q = 1.6 × 10–19 Coulomb, 0 = 8.85 × 10–14 Q.55 A abrupt pn-junction (located at x = 0) is
F/cm, r = 11.7 for silicon, the value of L (in nm) uniformly doped on both p and n sides. The
is _______ . width of the depletion region is W and the
[EC-2016 : 2 Marks] electric field variation in the x-direction is E(x).
Which of the following figures represents the
Q.52 An n + -n silicon device is fabricated with
electric field profile near the pn-junction?
uniform and non-degenerate donor doping
E(x )
concentrations of N D1 = 1 × 10 18 cm–3 and
ND2 = 1 × 1015 cm–3 corresponding to the n+ and n-side p-side
n regions respectively. At the operational
(a)
temperature T, assume complete impurity
ionization, kT/q = 25 mV, and intrinsic carrier (0, 0)
x
concentration to be ni = 1 × 1010 cm–3. What is
W
the magnitude of the built-in potential of this
device? E(x )
(a) 0.748 V (b) 0.460 V
n-side p-side
(c) 0.288 V (d) 0.173 V
[EC-2017 : 1 Mark] (b)
p n p n E(x )
14 –3 14 –3 16 –3 16 –3
10 cm 10 cm 10 cm 10 cm
n-side p-side
C1 C2
W
Diode 1 Diode 2 (d) x
(0, 0)
[EC-2017 : 2 Marks]
(c) On an average, holes and electrons drift in Q.61 Which one of the following options describes
opposite direction. correctly the equilibrium band diagram at
(d) On an average, electrons drift and diffuse T = 300 K of a silicon pnn+ p++ configuration
in the same direction. shown in the figure?
[EC-2018 : 1 Mark]
p n n+ p++
Q.57 A p-n step junction diode with a contact
potential of 0.65 V has a depletion width of 1 µm EC
at equilibrium. The forward voltage (in Volts),
correct to two decimal places at which this EF
(a)
width reduces to 0.6 µm is ______ .
EV
[EC-2018 : 1 Mark]
Q.58 Red (R), Green (G) and Blue (B) Light Emitting
Diodes (LEDs) were fabricated using p-n EC
junctions of there different inorganic
semiconductors having different band-gaps. (b)
EF
The built-in voltages of red, green and blue
diodes are VR, VG, VB respectively. EV
dioxide layer that reflects one-fourth of the Q.66 A one-sided abrupt pn-junction diode has a
incident light. From the remaining light, one- depletion capacitance of CD of 50 pF at a reverse
third of the power is reflected from the silicon 2 versus the
bias of 0.2 V. The plot of 1/C D
dioxide Germanium interface, one-third is
absorbed in the Germanium layer, and one-third applied voltage V for this diode is a straight
is transmitted through the other side of the line as shown in the figure below. The slope of
sample. If the absorption coefficient of the plot is _____ × 1020 F–2 V–1.
Germanium at 600 nm is 3 × 104 cm–1 and the 2
1/C D
bandgap is 0.66 eV, the thickness of the
Germanium layer, rounded off to 3 decimal
places, is ______ µm.
20 mW, 600 nm
1 cm V
0
1 cm
(a) –1.2 (b) –5.7
Silicon dioxide 100 nm (c) –3.8 (d) –0.4
Germanium T [EC-2020 : 2 Marks]
Q.65 Consider the recombination process via bulk Q.68 The energy band diagram of a p-type
traps in a forward biased pn-homojunction rate semiconductor bar of length ‘L’ under
is Umax. If the electron and the hole capture cross- equilibrium condition (i.e., the Fermi energy level
section are equal, which one of the following is EF is constant) is shown in the figure. The
false? valance band EV is sloped since doping is non-
(a) With all other parameters unchanged, Umax uniform along the bar. The difference between
decreases if the intrinsic carrier density is the energy levels of the valence band at the two
reduced. edges of the bar is .
(b) With all other parameters unchanged, Umax
p-type
increases if the thermal velocity of the
carriers increases. EF
EV
(c) Umax is occurs at the edges of the depletion
region in the device.
(d) Umax depends exponentially on the applied
z=0 z=L
bias.
[EC-2020 : 1 Mark]
28 Electronics Engineering Electronic Devices & Circuits
If the change of an electron is q, then the (a) 226 meV (b) 174 meV
magnitude of the electric field developed inside (c) 218 meV (d) 182 meV
this semiconductor bar is [EC-2022]
2 3
(a) (b) Q.71 A p-type semiconductor with zero electric field
qL 2qL
is under illumination (low level injection) in
steady-state condition. Excess minority carrier
(c) (d)
2qL qL density is zero at x = ±2In, where ln = 10–4 cm is
[EC-2021 : 1 Mark] the diffusion length of electrons. Assume
electronic charge, q = –1.6 × 10–19 C. The profiles
Q.69 A silicon P-N junction is shown in the figure. of photo-generation rate of carriers and the
the doping in the ‘P’ region is 5 × 1016 cm–3 and recombination rate of excess minority carriers
doping in the ‘N’ region is 10 × 1016 cm–3. The (R) are shown. Under these conditions, the
parameters given are: magnitude of the current density due to the
Built-in voltage ( bi) = 0.8 V photo-generated electrons at x = ±2ln is ______
Electron charge (q) = 1.6 × 10–19 C mA/cm2 (Rounded off to two decimal places).
Vacuum permittivity ( 0) = 8.85 × 10–12 F/m
Relative permittivity of silicon ( si) = 12 Semiconductor
20
P N Photo generation 10
–3
Rate (cm /s) 0
1.2 µm 0.2 µm x
–2ln –ln 0 ln 2ln
The magnitude of reverse bias voltage that
would completely deplete one of the two regions
(P or N) prior to the other (Rounded off to one R = 1020 exp
x
Excess minority ln
decimal place) is _______ V. carrier recombination 10
20
–3
[EC-2021 : 2 Marks] rate (cm /s)
9. (Sol.) 10. (a, b) 11. (d) 12. (a) 13. (c) 14. (b) 15. (c) 16. (b)
17. (c) 18. (c) 19. (c) 20. (a) 21. (b) 22. (d) 23. (b) 24. (b)
25. (c) 26. (a) 27. (c) 28. (c) 29. (b) 30. (c) 31. (a) 32. (d)
33. (a) 34. (b) 35. (b) 36. (c) 37. (d) 38. (b) 39. (a) 40. (8)
41. (–30.65) 42. (d) 43. (a) 44. (2.5) 45. (0.5147) 46. (c) 47. (–48) 48. (c)
49. (c) 50. (21) 51. (32.36) 52. (d) 53. (10) 54. (0.526) 55. (a) 56. (d)
57. (0.42) 58. (b) 59. (0.12) 60. (0.61) 61. (d) 62. (35.83) 63. (0.231) 64. (b)
65. (c) 66. (*) 67. (c) 68. (d) 69. (8.2 V) 70. (c) 71. (0.59)
If If
= I = ( I o eVd / VT Io ) + Io
CD =
VT kT
CD If I = I o eVd / VT
1 I
CD eVd / VT =
T Io
2. (d) Vd I
= ln
1-A, 2-C, 3-B VT Io
Avalanche breakdown Collision of carriers
with crystal ions. I
Vd = VT ln
Io
Zener breakdown Rupture of covalent bond
due to strong electric field. KT I
Punch through Early effect Vd = ln [For Ge, = 1]
q Io
3. (b) Vd = V
KT I KT I
V= ln V= ln
q Io q Io
30 Electronics Engineering Electronic Devices & Circuits
4. (*)
9. Sol.
The lifetime of majority carriers in the N-region.
When diode instantaneously switched from a
The switching speed of a P+N (heavily doped
conduction state it needs some time to return to
p-region) junction depends on the lifetime ( ) of
non-conduction state, so diode behaves as short
minority carriers (holes) in the N-region (lightly
circuit for the little time, even in reverse direction.
doped region).
This is due to accumulation of stored excess
5. (c) minority carrier charge when diode is forward
Both P and N-regions are heavily doped. biased.
In a Zener diode P and N both the regions are Time required to return back to state of non-
heavily doped. conduction is ‘Reverse recovery time’ which is
Doping level of Zener diode is 1 : 105. ‘storage time’ and ‘transition time’.
• Storage time is the period for which diode
6. (b) remains in conduction state even in reverse
The depletion capacitance decreases with direction.
increase in the reverse bias. • Transition time is time elapsed in returning
Depletion width = W back to state of non-conduction.
W VRB For 0 < t < to, Vm = 20 V, ‘D’ is forward biased.
8. (b)
–2 mA
For abrupt p-n junction,
C j V–1/2
1 10. (a, b)
Cj
V Increases with the increase in the doping levels
C2 V1 1+0 1 1 of the two sides. Built in potential or diffusion
= = = = potential across a p-n junction diode,
C1 V2 1 + 99 100 10
C1 1 N A ND
C2 = = = 0.1 nF/cm 2 Vo = kT ln
10 10 ni2
GATE Previous Years Solved Paper 31
So, m = VT
So, Vo ni2
x = ln (I)
Vo NA ND
c = – VT ln (Io)
So, option (a) and option (b) both are correct.
y = Vd
11. (d)
ln (If)
Increases with increase in doping concentration
contact potential of diffusion potential across a
pn-junction,
N A ND
Vo = kT ln
ni2
Vd
Vr
at constant temperature,
Vo NAND
15. (c)
12. (a) Diode is forward bias in the starting.
Tunneling of charge carriers across the junction Diode is reverse bias later.
a Zener diode works on the principle of But at t = 0 diode is reverse bias.
tunneling of charge carriers across the junction So, I = –100 mA
which leads the junction to breakdown.
16. (b)
13. (c) dV
For either Si or Ge 2 mV / °C
dT
Cj VR 1 /2
In order to maintain a constant value of I.
The depletion layer capacitance of diode is T2 – T1 = 40 – 20 = 20°C
given, 2 × 20 mV = 40 mV
C T V–n Therefore, VD = 700 – 40 = 660 mV
1
n= for step graded or abrupt p-n junction 19. (c)
2
= 1 for Germanium
CT VR 1 /2 = 2 for Silicon at low value of current
I = I o Si ( eVD1 / VT
1) ...(i)
14. (b)
(Log I versus V)
I = I o Ge ( eVD2 / VT
1) ...(ii)
I = Io [ eVd / VT 1] = forward current
LHS of (i) = (ii),
Q eVd / VT >>1
VD1 VD2
I = Io eVd / VT I o Si e VT
1 = I o Ge e VT
1
I
eVd / VT =
Io VD1 0.718
3
I oGe e VT
1 e 2 × 26 × 10 1
Vd I = =
= ln = ln ( I ) ln ( I o ) I oSi VD2
e
0.1435
1
VT Io e VT
1 26 × 10 3
e
Vd = VT ln(I) – VT ln(Io)
= 4 × 103
y = mx + C
32 Electronics Engineering Electronic Devices & Circuits
Cj Vj 1/2
For 0 < t < ts,
C j2 V1 1 1
= = =
C j1 V2 4 2
– +
C j1 1 pF
C j2 = = = 0.5 pF 5V 1k VR = –5 Volt
I
2 2 + –
23. (b)
We know that, 28. (c)
(T2 T1 ) Electrical field always maximum at the junction.
I o(T ) = I o(T ) × 2 10
2 1
31. (a)
I o(40°C) = I o
(20°C)
× 22 Junction potential = Built-in potential + Reverse
I o(40°C) = 40 pA bias voltage,
Vj = Vo + VR
24. (b) Now for abrupt pn-junction depletion width,
A W V j1/2
o r
C=
d 1/2
W = KVj
C 8.85 × 10 12 × 11.7 2 µm = K(0.8 + 1.2)1/2 ...(i)
= = 10.35 µF
A 10 × 10 6 x = K(0.8 + 7.2)1/2 ...(ii)
From equation (i) and (ii),
25. (c)
x = 4 µm
I
e
34. (b)
nc
ta
IP
is
1/2
2 Vj
WN =
IV eN D
V
VP VV
eN D WN2
Vj = 0.76 Volts
2 o r
GATE Previous Years Solved Paper 33
2 1 1
6V W= + Vbi
V q N A ND
2 × 1.04 × 10 12 1 1
W= 19 18
+ × 0.86
1.6 × 10 5 × 10 10 16
Reverse Reverse bias region below W = 3.3 × 10–5 cm
breakdown the breakdown voltage
region 44. Sol.
Lp = p Dp E2
or, VBr =
2qND
= 6
100 × 10 × 36 = 0.06 cm VBr × ND is a constant.
Using the above values, we get hole current
49. (c)
density injected from P region to N region is
X Ge diode ............... EG = 0.2 V
= 0.5147 nA/ cm2
Y Si diode ............... EG = 0.7 V
46. (c) Z GaAs diode (or) LED ............... EG = 1.3 V
Built-in potential,
50. Sol.
1
0 = 2
× (106 V/m) × (1.1 × 10 6 m) Maximum obtained power
Fill factor =
VOC I SC
= 0.55 Volts
Maximum obtained power
But in question [option (c)] is given as, 700 mV. 0.7 = 3
0.5 × 180 × 10
47. Sol. Maximum obtained power,
N A ND Pm = 0.063 W
Vo = VT ln
ni2 Pm 0.063
Efficiency, = = = 21%
G A 100 × 10 3 × 3
3 1016 × 1017 G Input light in W/cm2
= 26 × 10 ln
(1.5 × 10 10 )2
51. Sol.
Vo = 0.757 V
q
= ND XN
2 1 1
W= + Vo
q N A ND
1.6 × 10 19
5 × 103 = × 1017 × X N
2 × 8.854 × 10 16
× 12 1 1
8.85 × 10 14 × 11.7
= + 0.757
1.6 × 10 19 1016 10 17 On solving, XN = 3.2356 × 10–6 cm
= 3.3255 µ-cm = 3.236 × 10–8 m
XN = L = 32.36 nm
GATE Previous Years Solved Paper 35
52. (d)
E(x )
n N n-side p-side
Vo = VT ln 1 = VT ln D1
n2 N D2 x NDq
xn =
N Aq
xp
v (x )
E( x ) = dx s s
18 s
10
= 0.25 ln 15
= 0.025 ln (1000)
10 Electric field
= 0.173 V profile x
–xn 0 xp
53. Sol. W
2 VR 1 1
W= + (Q VR>>Vbi) 56. (b)
e N A ND
Hole diffusion
Under reverse biased condition, p n
Electron diffusion
A 1
C = C Hole drift
W W
Electron drift
2 VR 2
C2 Hole diffusion current
W1 e 10 14
So, C 1 = W2 = = 10 Electron diffusion current
2 VR 2
e 10 16 Hole drift current
Electron drift current
54. Sol.
57. Sol.
J
VOC = VT ln L (JL Light intensity)
JS 2 1 1
Wdeap = + (Vbi VAK )
q N A ND
JL2
VOC2 VOC1 = VT ln
JS (0.65 VAK ) 0.6 µm
= = 0.6
VOC2 VOC1 = 25 ln20 75 mV = 0.075 V 0.65 1 µm
1
Energy gap, Eg =
v (x )
So, EgR < EgG < EgB
n-side NDq p-side
Materials with high energy gap will have high
Charge xp built-in voltages, when doping concentration
density x
–xn
are same.
–NAq So, VR < VG < VB
36 Electronics Engineering Electronic Devices & Circuits
71. (0.59) At x = ln :
Equation (1) = Equation (2)
n(x) = R n = 1020 e x /ln n
ln
n(ln) = 1020 e–1 n ...(1) 1020 e–1 n = B 1
2 ln
ln x 2ln
Continuity equation in steady-state, B = 2 × 1020 e–1 n
2 x
Dn
n
+G R = 0 n(x) = 2 × 10 20 e 1 n 1
2 2 ln
x
G=0 ln x 2ln
Since, ln x 2ln Electron diffusion current density:
R=0
dn
2
n Jn diff. = qDn
Dn = 0 dx
x2
20 1 1
Whose solution is, = qDn × 2 × 10 × e × n 0
2ln
n(x) = Ax + B
19
Since at x = 2ln : 1.6 × 10 × ln2 × 2 × 10 20 × e 1
=
n(2ln) = 0 (Given) 2ln
0 = A(2ln) + B = 1.6 × 10–19 × ln × 1020 × e–1
B = 1.6 × 101 × 1 × 10–4 × e–1
A=
2 ln (ln = 10–4 cm)
= 0.588 mA/cm 2
B x
n(x) = x+B= B 1 = 0.59
2 ln 2ln
...(2)
3 BJT and FET Basics
Q.1 In MOSFET devices the n-channel type is better Q.6 Channel current is reduced on application of a
than the P-channel type in the following respects more positive voltage to the GATE of the
(a) it has better noise immunity. depletion mode n-channel MOSFET.
(b) it is faster. (True/False)
(c) it is TTL compatible. [EC-1994 : 1 Mark]
(d) it has better drive capability.
Q.7 The breakdown voltage of a transistor with its
[EC-1988 : 2 Marks]
bass open is BVCEO and that with emitter open
Q.2 In a MOSFET, the polarity of the inversion layer is BVCBO, then
is the same as that of the
(a) BVCEO = BVCBO
(a) charge on the GATE-EC-electrode
(b) BVCEO > BVCBO
(b) minority carries in the drain
(c) BVCEO < BVCBO
(c) majority carriers in the substrate
(d) BVCEO is not related to BVCBO
(d) majority carriers in the source
[EC-1995 : 1 Mark]
[EC-1989 : 2 Marks]
Q.8 Match the following:
Q.3 Which of the following effects can be caused by
a rise in the temperature? List-I
(a) Increase in MOSFET current (IDS) A. The current gain of a BJT will be increased.
(b) Increase in BJT current (IC) B. The current gain of a BJT will be reduced.
(c) Decrease in MOSFET current (IDS) C. The break-down voltage of a BJT will be
(d) Decrease in BJT current (IC) reduced.
[EC-1990 : 2 Marks] List-II
Q.4 In a transistor having finite , forward bias 1. The collector doping concentration is
across the base emitter junction is kept constant increased.
and the reverse bias across the collector base 2. The base width is reduced.
junction is increased. Neglecting the leakage 3. The emitter doping concentration to base
across the collector base junction and the doping concentration ratio is reduced.
depletion region generations current, the base 4. The base doping concentration is increased
current will _____ (increase/decrease/remains
keeping the ratio of the emitter doping
constant).
concentration to base doping concentration
[EC-1992 : 2 Marks]
constant.
Q.5 The threshold voltage of an n-channel MOSFET 5. The collector doping concentration is
can be increased by reduced.
(a) increasing the channel dopant [EC-1994 : 2 Marks]
concentration.
(b) reducing the channel dopant concentration. Q.9 The transit time of a current carriers through
(c) reducing the GATE oxide thickness. the channel of an FET decides it ______
(d) reducing the channel length. characteristic.
Q.10 A BJT is said to be operating in the saturation Q.15 The effective channel length of a MOSFET in
region if saturation decreases with increase in
(a) both the junctions are reverse biased. (a) gate voltage (b) drain voltage
(b) base-emitter junction is reverse biased and (c) source voltage (d) body voltage
base-collector junction is forward biased. [EC-2001 : 1 Mark]
(c) base-emitter junction is forward biased and
Q.16 For an n-channel enhancement type MOSFET,
base-collector junction is reverse biased.
if the source is connected at a higher potential
(d) both the junctions are forward biased. than that of the bulk (i.e. VSB > 0), the threshold
[EC-1995 : 1 Mark] voltage VT of the MOSFET will
Q.11 The early-effect in a bipolar junction transistor (a) remain unchanged
is caused by (b) decrease
(a) fast-turn-on (c) change polarity
(b) fast-turn-off (d) increase
(c) large collector-base reverse bias [EC-2003 : 1 Mark]
(d) large emitter-base forward bias Q.17 When the gate-to-source voltage (VGS) of a
[EC-1995; 1999 : 1 Mark] MOSFET with threshold voltage of 400 mV,
working in saturation is 900 mV, the drain
Q.12 If a transistor is operating with both of its
current is observed to be 1 mA. Neglecting the
junctions forward biased, but with the collector
channel width modulation effect and assuming
base forward bias greater than the emitter-base
that the MOSFET is operating at saturation, the
forward bias, then it is operating in the
drain current for an applied VGS of 1400 mV is
(a) forward active mode.
(a) 0.5 mA (b) 2.0 mA
(b) reverse saturation mode.
(c) 3.5 mA (d) 4.0 mA
(c) reverse active mode.
[EC-2003 : 2 Marks]
(d) forward saturation anode.
Q.18 If for a silicon n-p-n transistor, the base-to-
[EC-1996 : 2 Marks]
emitter voltage (VBE) is 0.7 V and the collector-
Q.13 In a bipolar transistor at room temperature, if to-base voltage (VCB) is 0.2 V, then the transistor
the emitter current is doubled, the voltage across is operating in the
its base-emitter junction (a) normal active mode
(a) doubles (b) saturation mode
(b) halves (c) inverse active mode
(c) increases by about 20 mV (d) cut-off mode
(d) decreases by about 20 mV [EC-2004 : 1 Mark]
[EC-1997 : 2 Marks]
Q.19 Consider the following statements S1 and S2:
Q.14 MOSFET can be used as a S1 : The of a bipolar transistor reduces if the
(c) current controlled capacitor. base width is increased.
(b) voltage controlled capacitor. S2 : The of a bipolar transistor increases if the
(c) current controlled inductor. doping concentration in the base is
(d) voltage controlled inductor. increased.
Which one of the following is correct?
[EC-2001 : 1 Mark]
GATE Previous Years Solved Paper 41
(a) S1 is false and S2 is true. (c) the forward biasing of emitter-base junction.
(b) Both S1 and S2 are true. (d) the early removal of stored base charge
(c) Both S1 and S2 are false. during saturation-to-cut-off switching.
(d) S1 and true and S2 is false. [EC-2006 : 1 Mark]
[EC-2004 : 1 Mark]
Common Data Questions (24 to 26):
Q.20 Consider the following statements S1 and S2: The figure shows the high frequency capacitance
S1 : The threshold voltage (V T ) of a MOS voltage (C-V) characteristics of a Metal/SiO2/Silicon
capacitor decreases with increase in gate (MOS) capacitor having an area of 1 × 10–4 cm2. Assume
oxide thickness. that the permittivities ( 0 r) of silicon and SiO2 are
S2 : The threshold voltage (V T ) of a MOS 1× 10–12 F/cm and 3.5 × 10 –13 F/cm respectively.
capacitor decreases with increase in
substrate doping concentration. C
Which one of the following is correct? 7 pF
(a) S1 is false and S2 is true.
(b) Both S1 and S2 are true.
(c) Both S1 and S2 are false.
(d) S1 and true and S2 is false. 1 pF
V
0
[EC-2004 : 2 Marks]
Q.27 The drain current of MOSFET in saturation is (a) 450 cm2/V-s (b) 1350 cm2/V-s
given by ID = K(VGS – VT)2 where K is a constant. (c) 1800 cm2/V-s (d) 3600 cm2/V-s
The magnitude of the trans-conductance gm is [EC-2010 : 1 Mark]
2
K(VGS VT )
(a) (b) 2K(VGS – VT) Q.31 In a uniformly doped BJT, assume that NE, NB
VDS
and NC are the emitter, base and collector
ID K(VGS VT )2 dopings in atoms/cm3, respectively. If the
(c) V (d)
GS VDS VGS emitter injection efficiency of the BJT is close to
[EC-2008 : 1 Mark] unity, which one of the following conditions is
true?
Q.28 The measured trans-conductance g m of an
(a) NE = NB = NC
NMOS transistor operating in the linear region
(b) NE >> NB and NB > NC
is plotted against the gate voltage VG at a
constant drain voltage V D . Which of the (c) NE = NB and NB < NC
following figures represents the expected (d) NE < NB < NC
dependence of gm on VG? [EC-2010 : 2 Marks]
Q.34 The source body junction capacitance is Q.40 Consider two BJTs biased at the same collector
approximately current with area A1 = 0.2 µm × 0.2 µm and
(a) 2 fF (b) 7 fF A2 = 300 µm × 300 µm. Assuming that all other
(c) 2 pF (d) 7 pF device parameters are identical kT/q = 26 mV,
the intrinsic carrier concentrations is
[EC-2012 : 2 Marks]
1 × 1010 cm–3, and q = 1.6 × 10–19 C, the difference
Q.35 The gate source overlap capacitance is between the base-emitter voltages (in mV) of the
approximately two BJTs (i.e., VBE1 – VBE2) is ________ .
(a) 0.7 fF (b) 0.7 pF [EC-2014 : 2 Marks]
(c) 0.35 fF (d) 0.24 pF
[EC-2012 : 2 Marks]
Q.41 For the MOSFET in the circuit shown, the
Q.36 A BJT is biased in forward active mode. Assume
threshold voltage is VTh, where VTh > 0. The
VBE = 0.7 V, kT/q = 25 mV and reverse saturation
source voltage VGS is varied from 0 to VDD.
current Is = 10–13 mA. The trans-conductance of
Neglecting the channel length modulation, the
the BJT (in mA/V) is _______ .
drain current I D as a function of V SS is
[EC-2014 : 2 Marks]
represented by
Q.37 A depletion type N-channel MOSFET is biased VDD
in its linear region for use as a voltage controlled
resistor. Assume threshold voltage,
VTH = –0.5 V, VGS = 2.0 V, VDS = 5. V, W/L = 100,
Cox = 10–8 F/cm2 and µn = 800 cm2/V-s. The
value of the resistance of the voltage controlled
resistor (in ) is _______ .
Vss
[EC-2014 : 2 Marks]
is approximately ______ .
Vss
[EC-2014 : 2 Marks] VDD – VTh
44 Electronics Engineering Electronic Devices & Circuits
(a) If the device width ‘W’ is increased, the (a) inversion (b) accumulation
resistance decreases. (c) depletion (d) flat band
(b) If the threshold voltage is reduced, the [EC-2016 : 1 Mark]
resistance decreases.
(c) If the device length ‘L’ is increased, the Q.53 Figures I and II show two MOS capacitors of
resistance increase. unit area. The capacitor in Fig. (I) has insulator
(d) If VGS is increased, the resistance increases. materials X (of thickness t1 = nm and dielectric
[EC-2016 : 1 Mark] constant 1 = 4) and Y (of thickness t2 = 3 nm
and dielectric constant 2 = 20). The capacitor
Q.50 A voltage VG is applied across a MOS capacitor
in Fig. (II) has only insulator material X of
with metal gate and p-type silicon substrate at
thickness tEq. If the capacitors are of equal
T = 300 K. The inversion carrier density
capacitance, then the value of tEq (in nm) is
(in number of carriers per unit area) for VG = 0.8 V
_________ .
is 2 × 1011 cm–2. For VG = 1.3 V, the inversion
carrier density is 4 × 1011 cm–2. What is the value
Metal
of the inversion carrier density for VG = 1.8 V?
t2 2
(a) 4.5 × 1011 cm–2 (b) 6.0 × 1011 cm–2
t1 1
(c) 7.2 × 1011 cm–2 (d) 8.4 × 1011 cm–2
[EC-2016 : 2 Marks] Si
EV
46 Electronics Engineering Electronic Devices & Circuits
[EC-2017 : 2 Marks]
Normalized excess
PB0
(a) Q, R, P (b) P, Q, R
17 –3
10 (cm )
(c) Q, P, R (d) R, P, Q
[EC-2019 : 1 Mark] NB(x)
1. (b) 2. (d) 3. (b, c) 4. Sol. 5. (b) 6. (False) 7. (c) 8. (A-2, B-3, C-1)
9. Sol. 10. (d) 11. (c) 12. (b) 13. (c) 14. (b) 15. (b) 16. (d)
17. (d) 18. (a) 19. (d) 20. (d) 21. (d) 22. (a) 23. (b) 24. (a)
25. (b) 26. (c) 27. (b) 28. (c) 29. (d) 30. (b) 31. (b) 32. (d)
33. (d) 34. (a) 35. (a) 36. (5.76) 37. (500) 38. (0.0707)39. (2.4) 40. (380.28)
41. (a) 42. (20) 43. (4.33) 44. (0.02) 45. (d) 46. (1475) 47. (c) 48. (28.35)
49. (d) 50. (b) 51. (1.2) 52. (a) 53. (1.6) 54. (6.656) 55. (c) 56. (c)
57. (0.5) 58. (b) 59. (6.903) 60. (a) 61. (25.52) 62. (d) 63. (*) 64. (b)
65. (5.6)
Solutions
BJT and FET Basics
1. (b) 4. Sol.
n-channel MOSFET is faster than the p-channel (Decreases)
MOSFET. As the reverse bias increase at CB (collector base)
junction then the collector current (IC) increases
Mobility of electrons is always higher than the
and the effective base width decreases, so the
mobility of holes,
recombination in base decreases.
µn > µp
In n-channel the charge carriers are electrons 5. (b)
whereas in p-channel MOSFET the charge For the NMOS threshold voltage is given by
carriers are holes. VT = VTO + [ 2 f + VSB 2 ]
f
is the same as that of the majority carriers in the So, the threshold voltage of an n-channel
source. MOSFET can be increased by reducing the
channel dopant concentration.
3. (b, c)
IC = Ib + (1 + ) ICO 6. Sol.
as temperature increases, ICO increases, so the (False)
current (I C ) increases in BJT with rise in For depletion mode n-channel MOSFET, if the
temperature. GATE terminal is made more positive then the
Q mobility decreases as temperature increases, channel becomes more and more n-type hence
T µ the drain current will increase.
So, in MOSFET, current (IDS) decreases with rise 7. (c)
in temperature, The relationship between open base breakdown
T IDS voltage (BVCEO) of BJT with open emitter voltage
(BVCBO) is given by
GATE Previous Years Solved Paper 49
1 12. (b)
VBCEO = BVCBO
In a transistor when both the junction (JC and JE)
Q >1 are forward bias and if collector junction voltage
So, BVCEO < BVCBO is greater than emitter junction voltage then this
transistor is in reverse saturation region.
8. Sol.
13. (c)
(A-2, B-3, C-1)
• As the base width of the BJT is reduced then Ie = I o eVbe / VT 1
the recombination current (base current IB)
V / VT
decreases as a result collector current (IC) I o e be2 1
2I 1
increases. So, the current gain of the BJT = V / VT
I1 I o e be1 1
increases,
I 2
V
e be2
/ VT
= C 1
E = V / VT
1 e be1 1
• If the emitter doping concentration to base
Vbe2 / VT >>1
doping concentration ratio is reduced then e
the emitter injection efficiency decreases, so Vbe1 / VT >>1
e
the current gain ( ) of BJT reduces. Vbe / VT
e 2
• If the collector doping concentration is =2
Vbe / VT
e 1
increased then the breakdown (VBR) of a BJT
will be reduced. (Vbe2 Vbe1 ) VT =2
e
9. Sol. Vbe2 Vbe1
= ln2
The transit of a current carriers through the VT
channel of an FET decides its switching Vbe2 Vbe1 = VT (0.693)
characteristics. Take, =1
Vbe2 Vbe1 = 1 × 0.026 × 0.693
10. (d)
Vbe2 Vbe1 = 18 mV
Both the junctions are forward biased.
When emitter base (E-B) junction and collector 14. (b)
base (C-B) junction both are forward biased then
Voltage controlled capacitor.
the BJT is said to be operating in saturation
region. 15. (b)
As the edge of saturation i.e. when drain to
11. (c)
source voltage reaches VDsat the inversion layer
The process where the effective base width of charge at the drain end becomes zero (ideally).
the transistor is altered by varying the collector The channel is said to be pinched-off at the drain
junction voltage is called base width end. If the drain to source voltage V DS is
modulation of early effect. In a transistor by increased even further beyond the saturation
changing the collector junction voltage, is seen edge so that VDS > VDsat, an even larger portion
that the base width of the transistor is altered of the channel becomes pinched-off and effective
and this property is called as early effect. channel length is reduced.
50 Electronics Engineering Electronic Devices & Circuits
Eox =
s
Es 1 1
ro = = = 20 k
ox I Dsat 0.05 × 10 3
0.2 × 2
and Es = = 0.8 V/µm 43.. Sol.
0.5
12 Cmax ox /tox X d max ox
Eox = × 0.8 = 2.4 V/µm = = 1+ ×
4 Cmin ox s tox
× s
tox X d max
40. Sol.
ox + s
IC is given by, tox X d max
VBE 100 1
IC = Is exp = 1+ × = 4.33
VT 10 3
GATE Previous Years Solved Paper 53
60. (a)
VT = VTO + VBS + 2 B 2 B
Since, ms = 0
The MOS capacitor is ideal. VTO = VT V = 0
BS
Point P represents accumulation
Point Q represents flat band 2 qN A s
= Body effect parameter
Point R represents inversion C ox
Since,
61. Sol.
1 W VBS >>2 B
ID(sat) = µnC ox (VGS VT )2
2 L
VT VTO + VBS
1 7 10 2
= × 800 × 3.45 × 10 × (5 0.7) A
2 1 VT 1
=
= 25.5162 mA 25.52 mA VBS 2 VBS
62. (d) 1
50 × 10–3 =
MOS capacitance, 2 2
Qox Qd
VT = ms +2 Fp = 141.42 × 10 3
V
C ox C ox
14
= Ei – EF = 0.5 – 0.2 = 0.3 ox 4 × 8.85 × 10
Fp Cox = = 7
Qd tox 10 × 10
–0.16 = 0.93 0 + 2 × 0.3
C ox = 3.54 × 10–7 F/cm2
Qd 2qN A s
= 0.6 + 0.16 – 0.93 = –0.17 =
C ox C ox
Qb = –0.17 × Cox = –0.17 × 100 × 10–9 2 2
Cox
= –1.7 × 10–8 C/cm2 NA =
2q s
3 2 7 2
63. ( ) (141.42 × 10 ) × (3.54 × 10 )
NA = 19 14
W
2 × 1.6 × 10 × 12 × 8.85 × 10
N A2 ( x ) dx = 7.37 × 1015 per cm3
1 0
= W 65. (5.6)
2
N A1 ( x ) dx Qin = Cox(VGS – VT) or Cox(VG – VT)
0
Qin
W × 1017 2 × 1017
= VG – VT
= 2 C ox
= 1
× W × (1017 1014 ) 1017 + 1014
2 Qin 2.2
VT = VG =2 = 2 1.294
C ox 1.7
2 = 0.5 1
Hence no option is matching. = 0.706 Volt
Now, Qin at
64. (b)
VG = 4V
tox = 10 nm Qin = Cox(VG – VT)
VT = 1.7 × 10–6 × (4 – 0.706)
= 50 mV/V
VBS Qin = 5.5998 µC/cm2 5.6 µC/cm2
Communication Systems
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
Q.4 A signal x(t) = 2 cos( 104t) Volts is applied to Q.9 v(t) = 5[cos(10 6 t) – sin(10 3 t) × sin(10 6 t)]
an FM modulator with the sensitivity constant represents
of 10 kHz/Volt. Then the modulation index of (a) DSB suppressed carrier signal
the FM wave is (b) AM signal
(a) 4 (b) 2 (c) SSB upper sideband signal
(d) Narrow band FM signal
4 2
(c) (d) [EC-1994 : 1 Mark]
Q.11 Match List-I with List-II and select the correct Q.16 An FM signal with a modulation index 9 is
answer using the codes given below the lists: applied to a frequency tripler. The modulation
List-I List-II index in the output signal will be
A. SSB 1. Envelope detector (a) 0 (b) 3
B. AM 2. Integrate and dump (c) 9 (d) 27
C. BPSK 3. Hilbert transform [EC-1996 : 2 Marks]
4. Ratio detector Q.17 The image channel selectivity of
5. PLL superheterodyne receiver depends upon
Codes: (a) IF amplifiers only
A B C (b) RF and IF amplifiers only
(a) 3 1 2
(c) Preselector, RF and IF amplifiers
(b) 3 2 1
(d) Preselector and RF amplifiers only
(c) 2 1 3
[EC-1998 : 1 Mark]
(d) 1 2 3
[EC-1994 : 2 Marks] Q.18 A DSB-SC signal is generated using the carrier
cos( ct + ) and modulating signal x(t). The
Q.12 The image (second) channel selectivity of a
envelope of the DSB-SC signal is
superheterodyne communication receiver is
(a) x(t)
determined by
(a) antenna and preselector (b) x(t )
(b) the preselector and RF amplifier (c) only positive portion of x(t)
(c) the preselector and IF amplifier (d) x(t) cos
(d) the RF and IF amplifier [EC-1998 : 1 Mark]
[EC-1995 : 1 Mark]
Q.19 A modulated signal is given by:
Q.13 A PLL can be used to demodulate s(t) = m1(t) cos(2 fc t) + m2(t) sin(2 fct)
(a) PM signals (b) PCM signals where the baseband signal m1(t) and m2(t) have
(c) FM signals (d) DSB-SC signals bandwidths of 10 kHz and 15 kHz, respectively.
[EC-1995 : 1 Mark] The bandwidth of the modulated signal
(in kHz), is
Q.14 A PAM signal can be detected by using
(a) 10 (b) 15
(a) an ADC
(c) 25 (d) 30
(b) an integrator
[EC-1999 : 1 Mark]
(c) a band pass filter
(d) a high pass filter Q.20 A modulated signal is given by:
[EC-1995 : 1 Mark] s(t) = e–at cos[( c+ )t] u(t)
where a, c and are positive constants, and
Q.15 The image channel rejection in a
c >> . The complex envelope of s(t) is given
superheterodyne receiver comes from
by
(a) IF stages only
(a) exp(–at) exp[ j( c+ )t] u(t)
(b) RF stages only
(b) exp(–at) exp( j )t) u(t)
(c) detector and RF stages only
(c) exp( j )t) u(t)
(d) detector, RF and IF stages
(d) exp[( j c+ )t]
[EC-1996 : 1 Mark]
[EC-1999 : 1 Mark]
GATE Previous Years Solved Paper 3
100 MHz, 1 V 100 MHz, 1 V, 90° Q.40 Find the correct match between Group-1 and
Group-2.
(a) constant
Group-1
(b) 1 + sin(2 + 10 6 t ) P. {1 + km(t)} A sin( ct)
5 Q. km(t) A sin( ct)
(c) sin(2 + 106 t )
4 R. A sin{ ct + km(t)}
5 t
(d) + cos(2 + 106 t )
4 S. A sin ct + k m(t ) dt
[EC-2004 : 2 Marks]
Group-2
Q.38 Two sinusoidal signals of same amplitude and W. Phase modulation
frequencies 10 kHz and 10.1 kHz are added X. Frequency modulation
together. The combined signal is given to an
Y. Amplitude modulation
ideal frequency detector. The output of the
Z. DSB-SC modulation
detector is
6 Electronics Engineering Communication Systems
(a) P-Z, Q-Y, R-X, S-W Q.45 A message signal with bandwidth 10 kHz is
(b) P-W, Q-X, R-Y, S-Z Lower-Side Band SSB modulated with carrier
(c) P-X, Q-W, R-Z, S-Y frequency fc = 106 Hz. The resulting signal is
1
(d) P-Y, Q-Z, R-W, S-X then passed through a Narrow-Band Frequency
Modulator with carrier frequency fc = 106 Hz.
[EC-2005 : 1 Mark] 2
The bandwidth of the output would be
Q.41 Which of the following Analog Modulation (a) 4 × 104 Hz (b) 2 × 106 Hz
scheme requires the minimum transmitted
(c) 2 × 109 Hz (d) 2 × 1010 Hz
power and minimum channel bandwidth?
[EC-2006 : 2 Marks]
(a) VSB (b) DSB-SC
(c) SSB (d) AM Common Data for Questions (46 and 47):
[EC-2005 : 1 Mark] Consider the following Amplitude Modulated (AM)
signal, where fm < B:
Q.42 A device with input x(t) and output y(t) is xAM(t) = 10 (1 + 0.5 sin2 fmt) cos2 fct
characterized by
Q.46 The average side-band power for the AM signal
y(t) = x2(t)
given above is
An FM signal with frequency deviation of
(a) 25 (b) 12.5
90 kHz and modulating signal bandwidth of
(c) 6.25 (d) 3.125
5 kHz is applied to this device. The bandwidth
of the output signal is [EC-2006 : 2 Marks]
(a) 370 kHz (b) 190 kHz Q.47 The AM signal gets added to a noise with Power
(c) 380 kHz (d) 95 kHz Spectral Density Sn(t) given in the figure below.
[EC-2005 : 2 Marks] The ratio of average sideband power to mean
noise power would be
Q.43 A carrier is phase modulation (PM) with
Sn(f )
frequency deviation of 10 kHz by a single tone
frequency of 1 kHz. If the single tone frequency
is increased to 2 kHz, assuming that phase
deviation remains unchanged, the bandwidth
f
of the PM signal is –fe – B –fe –fe + B fe – B fe fe + B
(a) 21 kHz (b) 22 kHz
25 25
(c) 42 kHz (d) 44 kHz (a) (b)
8N 0 B 4N 0 B
[EC-2005 : 2 Marks]
25 25
Q.44 The diagonal clipping in Amplitude (c) (d)
2N 0 B N0 B
Demodulation (using envelope detector) can be [EC-2006 : 2 Marks]
avoided if RC time-constant of the envelope
detector satisfies the following condition, (here Q.48 In the following scheme, if the spectrum M(f ) of
W is message bandwidth and is carrier m(t) is as shown, then the spectrum Y(f ) of y(t)
frequency both in rad/sec) will be
1 1 M(f )
(a) RC < (b) RC >
W W
1 1
(c) RC < (d) RC >
f
–B 0 B
[EC-2006 : 2 Marks]
GATE Previous Years Solved Paper 7
Q.55 Consider an angle modulation signal: Q.58 The signal m(t) as shown is applied both to a
x(t) = 6 cos[2 × 106t + 2 sin(8000 t) phase modulator (with kp as the phase constant)
+ 4 cos(8000 t)] V and a frequency modulator with (kf as the
The average power of x(t) is frequency constant) having the same carrier
(a) 10 W (b) 18 W frequency.
(c) 20 W (d) 28 W m(t)
[EC-2010 : 1 Mark]
2
Q.56 The List-I (Lists the attributes) and the List-II
(Lists of the modulation systems). Match the
attribute to the modulation system that best –2 0 2 4 6 8 t(sec)
meet it.
List-I –2
A. Power efficient transmission of signals
B. Most bandwidth efficient transmission of The ratio k p /k f (in rad/Hz) for the same
voice signals maximum phase deviation is
C. Simplest receiver structure (a) 8 (b) 4
D. Bandwidth efficient transmission of signals (c) 2 (d)
with significant dc component [EC-2012 : 2 Marks]
List-II
1. Conventional AM Q.59 Consider sinusoidal modulation in an AM
system. Assuming no over-modulation, the
2. FM
modulation index (µ) when the maximum and
3. VSB
minimum values of the envelope, respectively,
4. SSB-SC
are 3 V and 1 V, is _______ .
Codes:
[EC-2014 : 1 Mark]
A B C D
(a) 4 2 1 3 Q.60 In the figure, M(f ) is the Fourier transform of the
(b) 2 4 1 3 message signal m(t) where A = 100 Hz and
(c) 3 2 1 4 B = 40 Hz. Given v(t) = cos(2 fct) and (t) =
(d) 2 4 3 1 cos(2 (f c + A)t), where f c > A. The cut-off
[EC-2011 : 1 Mark] frequencies of both the filters are f c .
Q.57 A message signal, M (f )
9. (d) 10. (101) 11. (a) 12. (b) 13. (c) 14. (b) 15. (b) 16. (d)
17. (d) 18. (b) 19. (d) 20. (b) 21. (c) 22. (d) 23. (a) 24. (a)
25. (d) 26. (c) 27. (d) 28. (c) 29. (a) 30. (c) 31. (d) 32. (d)
33. (b) 34. (a) 35. (b) 36. (b) 37. (c) 38. (d) 39. (b) 40. (d)
41. (c) 42. (a) 43. (d) 44. (a) 45. (b) 46. (c) 47. (b) 48. (a)
49. (a) 50. (b) 51. (a) 52. (c) 53. (c) 54. (c) 55. (b) 56. (b)
57. (b) 58. (b) 59. (0.50) 60. (60) 61. (10) 62. (a) 63. (4) 64. (c)
65. (350) 66. (c) 67. (c) 68. (a) 69. (5) 70. (0.5) 71. (3485) 72. (20)
73. (5.208) 74. (0.125) 75. (d) 76. (0.75) 77. (2) 78. (c) 79. (1011313.7)
Solutions
Analog Communication Systems
1. (a) 4. (a)
The image rejection should be achieved before k f Am
IF stage because ones it enters into IF amplifier Modulation index = M f = =
m m
it becomes impossible to remove it from wanted
signal. So image channel selectivity depends (2 × 10 × 10 3 ) × (2)
Mf = =4
upon preselector and RF amplifiers only. The IF × 10 4
amplifiers helps in rejection of adjacent channel
5. (c)
frequency and not image frequency.
In commercial TV transmission in India, picture
2. (a) signal is modulated using VSB modulation and
speech or audio signal is modulated using FM
XFm(t) = Ac cos[ ct + k f m(t ) dt ]
modulation.
XFm(t) = Ac cos[ ct + k f Em cos m t dt ] 6. (b)
k f Em When the message signal is symmetrical square
XFm(t) = Ac cos ct + sin mt wave, 50% power efficiency can be achieved by
m
an AM modulator.
Modulation index,
k f Em 7. (c)
mf =
m Given that,
XFm(t) = [Ac cos[ ct + mf sin x(t) = 5(1 + 2 cos200 t) cos20000 t ...(i)
mt)]
The standard equation for AM signal is,
3. (c)
XAM(t) = Ac (1 + m cos mt) cos ct ...(ii)
FM detection using a discriminator suffers from
By comparing the equation (i) and equation (ii),
the threshold effect.
we have m = 2.
GATE Previous Years Solved Paper 13
11. (a)
19. (d)
SSB Hilbert transform B.W. = 2fm
AM Envelope detector = 2 × 15 kHz
BPSK Integrate and dump = 30 kHz
= 3 × B.W. = 6 m
100 MHz, 1 V 101, MHz,1/2 V
= =6
m 101, MHz,1/2 V Output = y(t)
1 39. (b)
y(t) = cos{2 × 101 × 106 } t + sin(2 × 100 + 106 ) t
2
Spectrum at the output of the first balanced
1 6 6 modulator,
= [cos(2 100 × 10 ) t cos 10 t 2
2
38. (d)
x(t) = cos(2 × 10kt) + cos(2 × 10.1kt)
= cos(2 × 10kt) + cos[2 (10 k + 0.1k)t]
0 2 3 13 23 24 26 f (kHz)
= cos(2 × 10kt) + cos(2 × 10kt) cos(200 t)
–sin(2 × 10kt) sin(200 t) So, the spectral peaks exists at f = 2 kHz and
= cos(2 × 10kt) [1 + cos(200 t)] 24 kHz.
–sin(2 × 10kt) sin(200 t)
42. (a)
= [1 + cos(200 t )]2 + sin 2 (200 t ) cos[2 × 10 kt + (t )] B.W. = 2( f + fm)
= 2(180 + 5)
1 sin (200 t )
(t) = tan = 370 K
1 + cos(200 t )
Note : When FM signal is applied to doubler
Frequency frequency deviation doubles but fm remains the
detector d (t )
Ac cos[2 fct + (t)] Output same.
dt
SSB
mf = f
m
where, = maximum frequency deviation
fm = maximum frequency component
Given that, fm = 1500 Hz
–fc1 0 fc1 Deviation,
10 kHz 10 kHz = 5sin(2 × 1500t) + 7.5 sin(2 × 1000t)
d
fmax = fc1 = 106 Hz = = 5 × 2 × 1500 cos(2 × 500t)
dt
After passing the SSB signal through an NBFM
+ 7.5 × 2 × 1000 cos(2 × 1000t)
modulator,
= 2 (7500 + 7500)
(BW)out = 2fmax = 2 × 106 Hz max
max
= = 15000 Hz
46. (c) 2
2 ma = ma21 + ma22
µ=
Ac 0.25 × 2
= × 100% = 20%
Condition for envelope detection of an AM 2 + 0.25 × 2
signal is,
54. (c)
µ 1
Conventional AM signal is,
2
1 or Ac 2 x(t) = Ac [1 + m(t)] cos(2 fct)
Ac
= Ac cos(2 fct) + Ac m(t) cos(2 fct)
Therefore minimum value of Ac should be 2.
In option (b),
2
Modulation index = =2
1
18 Electronics Engineering Communication Systems
58. (b)
For phase modulator,
(t) = 2 fct + kp m(t) –fc – A –fc – B 0 fc + B fc + A
Maximum phase deviation is,
Now, the output of second multiplier is,
( D)max = kp max[m(t)] = 2kp ...(i)
y(t) w(t) = z(t)
For frequency modulator,
Therefore,
t
(t) = 2 fc t + 2 k f m(t ) dt Z (f )
0
t
( D)max = 2 kft 0
m(t ) dt
max
2 –2fc – 2A –2fc – A – B B–A 0 A – B 2fc + A + B 2fc + 2A
( D)max = 2 kf m(t ) dt
0 After passing through the low pass filter centred
( D)max = 8 kf ...(ii) at fc the Fourier transform of output s(t) is
GATE Previous Years Solved Paper 19
63. Sol.
S (f )
Ratio of PSB to PC is,
PC µ 2
PSB =
2
B–A 0 A–B PSB µ2
=
Thus, B.W. = (A – B) – 0 PC 2
= 100 Hz – 40 Hz PSB µ2
and = 1
= 60 Hz PC 1 2
= 1 f1 + 2 f2
f
–1200 – W –1200 –1200 + W 1200 – W –1200 1200 + W
20 Electronics Engineering Communication Systems
H(f )
VCO output Divide by
fn
(Nfin) N counter
5 kHz 10 kHz 2
f(Hz)
–1700 700 0 700 1700 5 kHz 20 kHz 4
y(t) = 10x(t) + x2(t) 5 kHz 40 kHz 8
z(t) = 10x(t) = 10m(t) cos(2400 t)
Y(f ) 5 kHz 80 kHz 16
BPF 1 2
2
m (t) m (t )cos(4800 t )
2
69. Sol.
74. Sol.
0 1 3 4 6 t(ms)
The power of the carrier signal is,
–1000
(4)2
Pc = =8W So, fi(min) = 50 kHz – (5 × 1000 Hz) = 45 kHz
2
The power of message signal can be taken as fi(max) = 50 kHz + (5 × 2000 Hz) = 60 kHz
the power carried by the sidebands. f i(min) 45
= = 0.75
So, the power of the message signal is, f i(max) 60
(1)2
Pm = 2 =1W 77. Sol.
2
S(t)pm = Ac cos[2 fct + kpm(t)]
Required ratio,
Pm 1 S(t)Fm = Ac cos 2 f c t + k f m(t ) dt
= = 0.125
Pc 8 0
22 Electronics Engineering Communication Systems
V 79. (1011313.7)
m(t ) Vm
10 Vrms = 4 = Vm = 4 2
2
fm = 1 kHz
Kp = 2 rad/volt
t(sec) c(t) = 2 cos(2 106t)
0 1 3 6 7
SPM(t) = Ac cos(2 fct + Kpm(t))
Instantaneous frequency are equal,
K p dm(t )
1 d fi,max = f c +
fi = (t ) 2 dt max
2 dt
kp d m(t) = 4 2 cos(2 10 3 t )
fiPM = f c + m(t )
2 dt
dm(t )
Kf = 4 2 × 2 × 10 3 sin(2 10 3 t )
f i FM = f c + m(t ) dt
2
dm(t )
Given that, = 8 2 10 3 sin(2 10 3 t )
dt max max
(fiPM)max = (fiFM)max
kp d kf = 8 2 10 3
fc + m(t ) = fc + [m(t )]max
2 dt max 2 2
f i max = 106 + × 8 2 10 3
kp d kf 2
m(t ) = m(t )
2 dt 2 = 1011313.7 Hz
max max
d 80. (1400)
m(t ) = 5 m(t ) max = 10
dt max fs = 600 kHz
5 kp = 10 kf fLO = 1000 kHz
kp fSI = Image frequency = fs + 2fIF
=2
kf fIF = fLO – fs = 1000 k – 600 k = 400 k
fSI = fs + 2fIF = 600 k + (2 × 400 k)
78. (c) = 1400 kHz
Output of multiplier
81. (94.44)
= x(t) cos2 (fc + 40) t
µ = 0.5
= m(t) cos2 fct × cos2 (fc + 40) t
Carrier and one sideband suppressed,
m(t )
= [cos 2 (2 f c + 40) t + cos 2 (40) t ] Power saved
2 % power saving = × 100
Given, Total power
m(t) = 4 cos1000 t PC + PUSB
= × 100
So, output of multiplier PT
= 2cos2 (500)t[cos2 (2fc + 40) t
+ cos2 (40) t] µ2
PC + PC
= cos2 (2fc + 540)t + cos2 (2fc – 460) t = 4 × 100
2
+ cos2 (540)t + cos2 (460) t µ
PC 1 +
2
Output of low pass filter
= cos[2 (460)] t
4 + 0.52
= cos920 t = × 100 = 94.44%
2(2 + 0.52 )
GATE Previous Years Solved Paper 23
Input C Output 1
= RC RC = 10–4
o
– – Option (a) only satisfies the required condition.
1
HDe( ) = H pe ( ) =
1 + j RC
1
HDe ( ) =
1 + ( RC )2
2 Random Signals and Noise
(a) no symmetry 1 2
(a) (b)
(b) conjugate symmetry 2
(c) even symmetry 1
1
(d) both (b) and (c) (c) (d)
2 2
[EC-1996 : 2 Marks] [EC-1998 : 1 Mark]
Q.10 The power spectral density of a deterministic Q.14 The amplitude spectrum of a Gaussian pulse is
signal is given by [sin(f )/f ] 2, where ‘f ‘ is (a) uniform (b) a sine function
frequency. The autocorrelation function of the (c) Gaussian (d) an impulse function
signal in the time domain is
[EC-1998 : 1 Mark]
(a) a rectangular pulse
Q.15 The probability density function of the envelope
(b) a delta function
of narrow band Gaussian noise is
(c) a sine pulse
(a) Poisson (b) Gaussian
(d) a triangular pulse
(c) Rayleigh (d) Rician
[EC-1997 : 2 Marks]
[EC-1998 : 1 Mark]
Q.11 An amplifier A has 6 dB gain and 50 input
Q.16 The PDF of a Gaussian random variable X is
and output impedances. The noise figure of this
given by:
amplifier as shown in the figure is 3 dB. A
cascade of two such amplifiers as in the figure ( x 4)2
1
will have a noise figure of Px ( x ) = e 18
3 2
The probability of the even {X = 4} is
A A A
1 1
(a) (b)
2 3 2
50 50 50 50
1
(c) 0 (d)
4
[EC-2001 : 1 Mark]
(a) 6 dB (b) 8 dB
(c) 12 dB (d) none of the above Q.17 The PSD and the power of a signal g(t) are
[EC-1997 : 1 Mark] respectively, Sg( ) and Pg. The PSD and the
power of the signal ag(t) are respectively
Q.12 The ACF of a rectangular pulse of duration T is
(a) a2 Sg( ) and a2Pg
(a) a rectangular pulse of duration T
(b) a2 Sg( ) and aPg
(b) a rectangular pulse of duration 2T (c) aSg( ) and a2Pg
(c) a triangular pulse of duration T (d) aSg( ) and aPg
(d) a triangular pulse of duration 2T [EC-2001 : 2 Marks]
[EC-1998 : 1 Mark]
Q.18 If the variance 2X of d(n) = x(n) – x(n – 1) is one-
Q.13 A probability density function is given by
tenth the variance 2X of a stationary zero-mean
x2
P( x ) = K exp ; <x<
2 discrete-time signal x(n), then the normalized
2
The value of K should be autocorrelation function RXX ( k )/ X at k = 1 is
26 Electronics Engineering Communication Systems
(a) 0.95 (b) 0.90 Q.23 The distribution function FX(x) of a random
(c) 0.10 (d) 0.05 variable X is shown in the figure. The
[EC-2002 : 2 Marks] probability that, X = 1 is
[EC-2003 : 1 Mark] x
–2 0 1 3
Q.27 An output of a communication channel is a Q.30 A zero-mean white Gaussian noise is passed
random variable ‘v’ with the probability density through an ideal low-pass filter of bandwidth
function as shown in the figure. The mean 10 kHz. The output is then uniformly sampled
square value of ‘v’ is with sampling period t s = 0.03 msec. The
samples so obtained would be
p(v)
(a) correlated
(b) statistically independent
k
(c) uncorrelated
(d) orthogonal
v [EC-2006 : 2 Marks]
0 4
Common Data for Questions (31 and 32):
(a) 4 (b) 6
The following two questions refer to wide sense
(c) 8 (d) 9
stationary stochastic processes.
[EC-2005 : 2 Marks]
Q.31 It is desired to generate a stochastic process (as
Common Data for Questions (28 and 29):
voltage process) with power spectral density,
Asymmetrical three-level midtread quantizer is to be
16
designed assuming equiprobable occurrence of all S( ) = 2
16 +
quantization levels.
by driving a linear-time-invariant system by zero
Q.28 If the probability density function is divided into mean while noise (as voltage process) with
three regions as shown in the figure, the value power spectral density being constant equal to 1.
of ‘a’ in the figure is The system which can perform the desired task
could be
1/4 (a) first order low-pass R-L filter.
(b) first order high-pass R-C filter.
Region 1 (c) tuned L-C filter
1/8
(d) series R-L-C filter
Region 2 Region 3
[EC-2006 : 2 Marks]
–a +a +1
–3 –1 +3
Q.32 The parameters of the system obtained in the
1 2 above question would be
(a) (b)
3 3 (a) first order R-L low-pass filter would have
1 1 R = 4 , L = 1 H.
(c) (d)
2 4 (b) first order R-C high-pass filter would
[EC-2005 : 2 Marks] have R = 4 , C = 0.25 F.
(c) tuned L-C filter would have L = 4 H, C = 4 F.
Q.29 The quantization noise power for the
quantization region between –a and +a in the (d) series R-L-C low-pass filter would have
figure is R = 1 , L = 4 H, C = 4 F.
4 1 [EC-2006 : 2 Marks]
(a) (b)
81 9 Q.33 A uniformly distributed random variable X with
5 2 probability density function,
(c) (d)
81 81 1
f X (x ) = (u( x + 5) u( x 5))
[EC-2005 : 2 Marks] 10
28 Electronics Engineering Communication Systems
1 x
+ (u( y + 2.5) u( y 2.5)) –1 0
10
(c) R( ) = –R(– ) x
–1 0 1
(d) The mean square value of the process is R(0)
[EC-2007 : 1 Mark]
CDF
Q.36 If S(f ) is the power spectral density of a real,
1
wide-sense stationary random process, then
which of the following is always true?
1
(a) S(0) S(f ) (b) S(f) 0 (d) x
–1 0
Statement for Linked Answer Questions (44 and 45): Q.47 Two independent random variables X and Y
Consider a baseband binary PAM receiver shown are uniformly distributed in the interval [–1, 1].
below. The additive channel noise n(t) is white with The probability that max[X, Y] is less than 1/2 is
power spectral density SN(f) = N0/2 = 10–20 W/Hz. The 3 9
low-pass filter is ideal with unity gain and cut-off (a) (b)
4 16
frequency 1 MHz. Let Yk represent the random variable
1 2
y(tk): (c) (d)
4 3
Yk = Nk if transmitted bit bk = 0
[EC-2012 : 1 Mark]
Yk = a + Nk if transmitted bit b = 1
where, Nk represents the noise sample value. The noise Q.48 A power spectral density of a real process X(t)
sample has a probability density function, for positive frequencies is shown below. The
n values of E[X2(t)] and E[ X(t ) , respectively are
PN k (n) = 0.5 e (This has mean zero and variance
r(t) y( t ) y(tk )
x(t) LPF S/H bˆ k = 1 if y(t k ) z
0 if y (t k ) < z
Sampling Threshold 0 9 10 11 (103 rad/s)
time z
Receiver
6000 6400
(a) ,0 (b) ,0
Q.44 The value of the parameter (in V–1) is
(a) 10 10 (b) 10 7 6000 20
6400 20
(c) , (d) ,
(c) 1.414 × 10–10 (d) 2 × 10–20 ( / 2) ( 2)
[EC-2010 : 2 Marks]
[EC-2012 : 1 Mark]
Q.45 The probability of bit error is
Q.49 Let U and V be two independent zero mean
(a) 0.5 × e–3.5 (b) 0.5 × e–5
Gaussian random variables of variance 1/4 and
(c) 0.5 × e–7 (d) 0.5 × e–10 1/9 respectively. The probability P(3V 2U) is
[EC-2010 : 2 Marks] 4 1
(a) (b)
Q.46 X(t) is a stationary random process with 9 2
autocorrelation function RX( ) = exp(– 2). This 2 5
(c) (d)
process is passed through the system below. The 3 9
power spectral density of the output process [EC-2013 : 2 Marks]
Y(t) is
Q.50 Consider two identically zero-mean random
H(f ) = j2 f variables U and V. Let the cumulative
+ distribution functions of U and 2 V be F(x) and
X(t) Y(t)
G(x) respectively. Then, for all values of x
–
(a) F(x) – G(x) 0
(a) (4 2f 2 + 1) exp(– f 2) (b) F(x) – G(x) 0
(b) (4 2f 2 – 1) exp(– f 2) (c) (F(x) – G(x)) x 0
(c) (4 2f 2 + 1) exp(– f ) (d) (F(x) – G(x)) x 0
(d) (4 2f 2 – 1) exp(– f ) [EC-2011 : 2 Marks] [EC-2013 : 2 Marks]
GATE Previous Years Solved Paper 31
Q.51 Let, x1, x2 and x3 be independent and identically where ‘f ’ is the frequency expressed in Hz. The
distributed random variables with the uniform signal x(t) modulates a carrier cos16000 t and
distribution on [0, 1]. The probability P{x1 is the the resultant signal is passed through an ideal
largest} is ______ . band-pass filter of unity gain with center
[EC-2014 : 1 Mark] frequency of 8 kHz and bandwidth of 2 kHz.
The output power (in Watts) is ______ .
Q.52 Let X be a real-valued random variable with E[X]
[EC-2014 : 2 Marks]
and E[X2] denoting the mean values of X and
X2, respectively. The relation which always Q.57 Let X1, X2 and X3 be independent and identically
holds distributed random variables with the uniform
(a) (E[X])2 > E[X2] (b) E[X2] (E[X])2 distribution on [0, 1].
(c) E[X2] = (E[X])2 (d) E[X2] > (E[X])2 The probability P{X1 + X2 X3} is ______ .
[EC-2014 : 2 Marks] [EC-2014 : 2 Marks]
1 f
1 (c) SY ( f ) = SX
E x(t ) x t is ________ . 2 2
4W
1 f j2 f
[EC-2014 : 2 Marks] (d) SY ( f ) = SX e
2 2
Q.56 A real band-limited random process X(t) has [EC-2014 : 2 Marks]
two-sided power spectral density,
Q.60 Let X be a zero mean unit variance Gaussian
10 6 (3000 f ) Watts/Hz for f 3 kHz
Sx ( f ) = random variable. E[ X ] is equal to ______ .
0 otherwise
[EC-2014 : 1 Mark]
32 Electronics Engineering Communication Systems
Q.61 Consider a communication scheme where the When, = –0.3 the BER is closest to
binary values signal X satisfies P{X = 1} = 0.75 (a) 10 –7 (b) 10 –6
and P{X = –1} = 0.25. The received signal (c) 10 –4 (d) 10 –2
Y = X + Z, where Z is a Gaussian random [EC-2014 : 2 Marks]
variable with zero mean and variance 2. The
received signal Y is fed to the threshold detector.
Q.64 {Xn }nn == is an independent and identically
The output of the threshold detector X̂ is
distributed (i.i.d) random process Xn equally
+1 , Y >
Xˆ n=
1, Y likely to be +1 or –1. {Yn }n = is another
To achieve a minimum probability of error
random process obtained as Yn = Xn + 0.5Xn – 1.
P{ Xˆ X }, the threshold should be
The autocorrelation function of {Yn }nn ==
(a) strictly positive
(b) zero denoted by Ry[k], is
(c) strictly negative R Y [k ]
(d) strictly positive, zero or strictly negative 1
depending on the non-zero value of 2
(a)
[EC-2014 : 2 Marks]
k
–3 –2 –1 0 1 2 3
Q.62 Consider the Z-channel given in the figure. The
input is 0 or 1 with equal probability. R Y [k ]
1.0 1.25
0 0
0.5 0.5
(b)
Input Output k
0.25 –3 –2 –1 0 1 2 3
1 1 R Y [k ]
0.75 1.25
If the output is 0, the probability that the input (c) 0.5 0.5
0.25 0.25
is also 0 equals _______ .
k
[EC-2014 : 2 Marks] –3 –2 –1 0 1 2 3
y (t ) = Xn p (t nT ) X(t) = n g (t nT )
n= n=
(b) 2RX( ) – RX( – T0) – RX( + T0) distributed between 0 and 2. Assume and U and
(c) 2RX( ) + 2RX( – 2T0) V are statistically independent. The mean value
(d) 2RX( ) – 2RX( – 2T0) of the random process at t = 2 is _____ .
[EC-2016 : 2 Marks] [EC-2017 : 1 Mark]
Q.72 Let X(t) ne a code sense stationary random Q.74 Consider a white Gaussian noise process N(t)
process with the power spectral density SX(f ) with two-sided power spectral density
as shown in Fig. (a), where f is in Hertz (Hz). SN(f ) = 0.5 W/Hz as input to a filter with
The random process X(t) is input to an ideal t 2 /2
impulse response 0.5 (where t is in
low-pass filter with the frequency response
seconds) resulting in output Y(t). The power in
1
1, f Hz Y(t) in Watts is
2
H( f ) = (a) 0.11 (b) 0.22
1
0, f > Hz
2 (c) 0.33 (d) 0.44
Q.77 In a high school having equal number of boy a uniform quantizer. The PCM output is
students and girl students, 75% of the students transmitted over a channel that can support a
study Science and the remaining 25% students maximum transmission rate of 50 kbps.
study Commerce. Commerce students are two Assuming that the quantization error is
times more likely to be a boy than are Science uniformly distributed, the maximum signal to
students. The amount of information gained in quantization noise ratio that can be obtained
knowing that a randomly selected girl student by the PCM system (Rounded off to two decimal
studies Commerce (Rounded off to 3 decimal places) is ________ .
places) is ______ bits. [EC-2021 : 2 Marks]
[EC-2021 : 2 Marks]
Q.81 The auto-correlation in function RX( ) of a wide
Q.78 A box contains the following three coins: sense stationary random process X(t) is shown
I. A fair coin with head on one face and tail in the figure.
on the other face. RX( )
II. A coin with heads on both the faces. 2
III. A coin with tails on both the faces.
A coin is picked randomly from the box and
tossed. Out of the two remaining coins in the
box, one coin is then picked randomly and –2 0 2
tossed. If the first toss results in a head, the
The average power of X(t) is _______ .
probability of getting a head in the second toss
[EC-2021 : 1 Mark]
is
2 2 Q.82 Consider a real valued source whose samples
(a) (b) are independent and identically distributed
5 3
random variables with the probability density
1 1
(c) (d) function f(x), as shown in the figure.
3 2
[EC-2021 : 2 Marks] f( x )
Y, respectively. The variances are related as, Consider a 1-bit quantizer that maps positive
2 2 2 2 samples to value and others to value . If
(a) Y =2 X (b) Y =4 X
and are the respective choices for and
(c) 2 2 (d) 2 2 that minimize the mean square quantization
Y =5 X Y = 25 X
[EC-2021 : 1 Mark] error, then ( – ) = ________ (Rounded off to
two decimal places).
Q.80 A message signal having peak-to-peak value of [EC-2022]
2 V, root mean square value of 0.1 V and
bandwidth of 5 kHz is sampled and fed to a
pulse code modulation (PCM) system that uses
36 Electronics Engineering Communication Systems
9. (d) 10. (d) 11. (d) 12. (d) 13. (a) 14. (c) 15. (c) 16. (c)
17. (a) 18. (a) 19. (c) 20. (d) 21. (d) 22. (c) 23. (d) 24. (a)
25. (b) 26. (b) 27. (c) 28. (b) 29. (a) 30. (a) 31. (a) 32. (a)
33. (b) 34. (a) 35. (c) 36. (b) 37. (a) 38. (a) 39. (c) 40. (b)
41. (b) 42. (b) 43. (d) 44. (b) 45. (d) 46. (a) 47. (b) 48. (a)
49. (b) 50. (d) 51. (0.33) 52. (b) 53. (d) 54. (0.346) 55. (4) 56. (2.5)
57. (0.16) 58. (2) 59. (c) 60. (0.8) 61. (c) 62. (0.8) 63. (c) 64. (b)
65. (a) 66. (0.25) 67. (6) 68. (a) 69. (–1) 70. (100) 71. (b) 72. (a)
73. (2) 74. (b) 75. (17.5) 76. (6) 77. (3.3219) 78. (c) 79. (b) 80. (30.72)
81. (2) 82. (1.167)
Solutions
Random Signals and Noise
1. (d) Therefore placing the pre-amplifier on the
Var(–Kx) = E[(–Kx)2 – (E[–Kx)])2 antenna side of the waveguide will result in the
2 = E[K2 x2] – K2 E[Kx] reduction of overall noise figure of the system.
2 = K2(E2 [x2] – E[x]2)
4. (b)
2 = K 2 2
x Half wave rectification can be represented as,
y = x for x 0
2. (d) = 0 for x < 0
Narrow-band representation of noise is, 1 1 y 2 /2 N
So, f(y) = (y) + e
n(t) = nc(t) cos ct – ns(t) sin ct 2 2 N
Its envelope is,
R(t) = nc2 (t ) + ns2 (t ) E[Y2] = y 2 f ( y ) dy
0
where, nc(t) and ns(t) are two independent, zero
mean Gaussian processes, with same variance.
1 1 y 2 /2 N
The resulting envelope is Rayliegh variable. E[Y2] = y2 (y) + e dy
2 2 N
0
3. (a)
A pre-amplifier is a very large gain amplifier y2 y 2 /2 N
E[Y2] = 0 + e dy
with low noise figure. 0
2 N
Noise figure of cascaded amplifier can be given
y
as: Let, =t
N
F 1 F3 1 Fn 1
F = F1 + 2 + + ... + dy =
G1 G1G2 G1G2 G3 ....Gn 1 N dt
GATE Previous Years Solved Paper 37
So,
1 2 t 2 /2
E[Y2] = Nt e N dt 4 KTe B(R1 + R2) = 4KT1BR1 + 4KT2BR2
2 N 0 4 KTe B(R1 + R2) = 4KB(R1T1 + R2T2)
Te (R1 + R2) = R1T1 + R2T2
N
E[Y2] =
2 R1T1 + R2T2
Te =
R1 + R2
5. (b, c)
Given that, Te = 21 °K, Ta = 300°K 7. (b)
Gain = (G)dB = 13
13 = 10 log10 (G) Mean = µX = E[ X } = xp( x ) dx
G = 19.95
Cable loss = (3)dB = 10 log10(L) 3 3
L = 1.995 1 1 x2
µX = x dx =
For a cable: 4 4 2
1 1
Noise in figure = F2 = cable loss =L
1 1 1
F2 = 1.995 µX = × [9 ( 1)2 ] = × 8
4 2 8
T µX = 1
Noise figure of amplifier = F1 = 1 + e
Ta Variance =
21 2
= E[(x – µX)]2
F1 = 1 + = 1.07 X
300
Noise figure of cascaded amplifier, ( x µ X )2
= X ( x ) dx
F 1
F = F1 + 2
G 3 3
1 1
1.995 1
2
X = ( x 1)2 dx = ( x 1)2 dx
= 1.07 + = 1.12 4 4
1 1
19.95
F = 0.49 dB 3
1
2
X = ( x 2 + 1 2 x ) dx
Te of the cascaded amplifier, 4
1
Te = (F – 1) Ta 3
2 1 x3 2x2
X = +x
Te = (1.12 – 1) 300 = 36°K 4 3 2
1
6. Sol. 2 1 27 1
X = +3 9 1 1
4 3 3
R1 R2 1 1 1 1
2 3 + + 2 = × [9 + 1 + 6]
Vn21 Vn22 X =
4 3 4 3
2 2
Vn2 = Vn1 + Vn2 2 4
X =
3
Vn2 = 4 KTe BR
8. (d)
= 4 KTe B(R1 + R2)
For a narrow-band noise with Gaussian
Vn21 = 4 KT1BR1 quadrature components the probability density
function (PDF) of its envelope will be Reyleigh.
Vn22 = 4 KT2BR2
38 Electronics Engineering Communication Systems
RX ( )
F.T.
GX ( ) 14. (c)
The Fourier transform of a Guassian signal in
2
sin f f time domain is also Gaussian signal in the
RX( ) = F 1 =F 1
sin c 2
f frequency domain,
t2 F.T. f2
Inverse Fourier transform of square of sinc e e
function is always a triangular signal in time
15. (c)
domain.
The probability density function (PDF) of the
11. (d) envelope of narrow-band Gaussian noise is
10 log10 (2) = 3 dB Rayleigh.
10 log10 (4) = 6 dB
16. (c)
So, F1 = 2 and G1 = 4
Probability of a Gaussian random variable is
For cascaded system,
defined for an internal and not at a point. So at
F1 1
F2 = F1 + = 2.25 X = 4, it is zero.
G1
10 log10(2.25) = 3.5 dB 17. (a)
SX ( ) H( ) SY ( )
12. (d)
2
SY( ) = H ( ) SX ( )
Rx( ) = x (t + ) x(t ) dt
18. (a)
= x( t ) x( t ) t = E [d2(n)] = E[{x(n) – x(n – 1)}2]
2 = E[x(n)]2 + E[x(n – 1)]2
The autocorrelation function (ACF) of a d
rectangular pulse of duration T is a triangular –2E[x(n) x(n – 1)]
pulse of duration 2 T. 2
X 2 2
= X+ X 2 RXX (1)
13. (a) 10
Gaussian probability density of random Autocorrelation at k = 1,
variable ‘x’ is given by 19 2
2RXX(1) = X
2 10
1 ( x µ)
X(x) = exp 2 RXX (1) 19
2 2 = = 0.95
2
X 20
GATE Previous Years Solved Paper 39
K 23. (d)
Area under fX(x) = 1 P(x = 1) = FX(x = 1+) – FX(x = 1–)
1
x K= = 0.55 – 0.25 = 0.30
–1 1 2
24. (a)
f Y(y )
3
K
1
Ps 10
1 SNR = = 20
K1 = N 0 B 10 × 100 × 106
3
–2 1
y = 10 9
(SNR)dB = 10 log10 9 = 90 dB
fX(x) fY(y) Cable loss = 40 dB
1/3 SNR at RX = (90 – 40) dB = 50 dB
1
= K 11 –1/6
6 25. (b)
z fX(x)
–3 –2 –1 2
1
1
K 11 =
6
1 x
. 0 1
Since it lies in middle of
3
Qe = s.v. – q.v. = x – xq
Prob [z –2] = Area of graph [z –2]
Mean square value of quantization noise
1 1 1
= × ×1 = = E [( x xq )2 ]
2 6 12
1
21. (d) = ( x xq )2 f X ( x ) dx
0
RXX( ) = 4[ e 0.2 + 1]
1
P(X 1) = FX(1) = ( x xq )2 1 dx
0
X µ
= 1 Q at X = 1 0.3 1
= ( x 0)2 dx + ( x 0.7)2 dx
µ = 0 (Given) 0 0.3
2 = 8
= 0.039
= 2 2 Root mean square value of the quantization
noise
1
P(X 1) = 1 Q
2 2 = 0.039 = 0.198
40 Electronics Engineering Communication Systems
26. (b)
RX( )
PSDout = H ( )2 PSDin = 4N 0 IFT
4
E[X2] = x 2 f X ( x ) dx
0.03 ms
0
RX( ) 0 at = 0.03 m-sec. So correlated.
x
f X ( x ) = y = mx + c =
8 31. (a)
K×4
= Area = 1 16
2 S( ) = ...(i)
2
1 16 +
K=
2 4
H(s) =
4 4+s
4
2 x x4 which is a LPF.
E[X2] = x dx = =8
8 4×8 It is a low pass RL filter.
0 0
2 /3 2 /3 1/10
1 2 1 x3
E[X2] = 2 x dx =
4 2 3
0 0 x x
–2.5 2.5 –5 5
1 8 4
E[X2] = × =
6 27 81 Y is a discrete random variable takes the values
of 0 and 1,
30. (a)
Y = 1; 2.5 x 2.5
s(f ) s0(f )
Y = 0; x 2.5
N0/2 LPF N0/2
fc = 10 kHz 1
f f
P(Y = 0) = P( 2.5 x 2.5) =
–10 K 10 K 2
GATE Previous Years Solved Paper 41
1 fc2
P(Y = 1) = P ( x 2.5) = Output PSD = H ( f ) 2 Input PSD = K
2 f 2 + fc2
1 1
fY(y) = (y) + ( y 1)
2 2 Output noise power = (output PSD) df
34. (a)
f c2
2 = K df
x = E[x2] – E2[x] f 2 + f c2
AC power = Total power – DC power = K fc (By substitution f = fc tan )
41. (b)
PX ( x ) dx = 1
PSD = FT [R( )]
R( )
2x 3x
or, {M e +Ne } dx = 1
= FT
2x 3x 1
or, (M e +Ne ) dx =
2
sinc2 function
M N 1
or, + =
2 3 2 42. (b)
2N
or, M+ =1 Mean = X = xi p( xi )
3
= (1 × 0.1) + (2 × 0.2) + (3 × 0.4)
39. (c) + (4 × 0.2) + (5 × 0.1) = 3
1 1
H(f ) = = X2 = x12 P( xi )
1 + j 2 fRC 1 + j f
fc = (1 × 0.1) + (4 × 0.2) + (9 × 0.4)
fc2 + (16 × 0.2) + (25 × 0.1) = 10.2
2
H( f ) =
f 2 + fc2 2 = X 2 ( X )2 = 1.2
42 Electronics Engineering Communication Systems
j ( f × 10 3 ) 10 6
= ( j 2 f ) [1 + e ] n
= 0.5 e dn with = 107
2
H( f ) = 4 2f 2 [2 + 2 cos( f × 10–3)]
0
2f2 P = 0.5 e–10
=8 [1 + cos( f × 10–3)] 1
2 When a ‘0’ is transmitted:
SY(f ) = H ( f ) SX ( f )
YK = NK
= 8 2 f 2 [1 + cos( f × 10–3)] SX(f )
For error to occur,
For f = (2n + 1) f0 with f0 = 1 kHz
–3 YK > 10 –6
f × 10 is an odd multiple of .
SY(f ) = 0 1
P = PNK (n) dn = 0.5 × e 10
0
44. (b) 10 6
46. (a)
Output noise power = SN 0 ( f ) df
d/dt
W +
= 10 20 × 2 × 106 Hz x(t ) y(t )
Hz
–
= 2 × 10–14 W
Since mean square value = Power
d
2 y(t) = x(t ) x(t )
= 2 × 10–14 = 107 dt
2
GATE Previous Years Solved Paper 43
48. (a)
w
SX( ) 0
400 ( – 104)
1
6 P(W 0) =
2
50. (d)
0
F(x) = P{X x}
9 10 11 (103 rad/s)
G(x) = P(2x x)
We know that, E[X2(t)] represent the total power
x
in random signal. = P x
2
44 Electronics Engineering Communication Systems
2 1 1
Q X can never be negative. = RX = 2 sin c ...(i)
4W 2
E(X2) [E(X)2]
We know that,
53. (d) sin x
sinc(x) =
E[X(t1) X(t2)] x
= E[A sin(2 t1 + )] × A sin(2 t2 + )] From equation (i), we get,
A2 sin
= E [cos[2 (t1 t2 )] cos[2 (t1 + t2 + 2 )]
2 2 2
=4
2
A 2
= cos[2 (t1 t2 )
2
56 Sol.
54. Sol.
10 6 (300 f ) W/Hz for f 3 kHz
Assume quantization voltage is VTh. SX ( f ) =
0 otherwise
For outputs of quantizer to have equal
probability. SX(f )
P(X VTh) = P(X VTh) –3
3 × 10
VTh
f X ( x ) dx = f X ( x ) dx 2 × 10
–3
VTh
f (kHz)
VTh –3 –1 1 3
2x 2x
2e dx = 2e dx
VTh PSD
0 If, x( t ) SX ( f )
1 Then,
2 × VTh =
e 2 SX ( f fc ) + SX ( f + fc )
PSD
x(t ) cos 2 f c t
VTh = 0.346 4
PSD of x(t) cos2 × 8000t
GATE Previous Years Solved Paper 45
3
3 × 10 1
4
0 2 –1 0
E[ x ] = x f X ( x ) dx x2 1 y2 1
0.75
Given, P(X) = [0.5 0.5]
1 x 2 /2
= x e dx y1 y2
2
Y x1 1 0
P =
0
1 X x2 0.25 0.75
x 2 /2
= x e dx
2 0.5 0
Then, P[X, Y] = 0.125 0.375
1 x 2 /2 and P(Y1) = 0.625
+ x e dx
0
2 P(Y2) = 0.375
and the conditional probability matrix.
1 x 2 /2
= 2 x e dx X
0
2 P is given by,
Y
2 y1 y 2
x 2 /2
= x e dx x1 0.8 0
2 X
0 P = x
Y 2 0.33 1
x2
Let, =t x1 0
2 Hence, P = P = 0.8
y1 0
2 x dx
= dt
2 63. (c)
Hence, Y = X+Z
2 Z is Gaussian RV with mean x,
t
e dt = 0.8 x {–a, +a}
2 0
when = 0;
E [ x ] = 0.8 E[Y] = E[X] + E[Z]
E[Y] = E[X] = +a
61. (c) BER = Q(a) = 1 × 10–8
The optimum threshold value is,
1 v2 /2 v2 /2
Q(v) = e du e
2
P( x2 ) x12 x22 2
0 = ln + 2
v
x1 x2 P( x1 ) 2
8 a2 /2
Q(a) = 1 × 10 e
x 1 = 1, x2 = –1
a=6
GATE Previous Years Solved Paper 47
1 + k2 + 2k = 0
2 2 2
So, X = E[X ] = x f X ( x ) dx (k + 1)2 = 0
k = –1
1
= x2 x e x
dx = x3 e x
dx 70. Sol.
2 0 X(t) = 3V(t) – 8
and E[V(t)] = 0
= e x ( x 3 + 3x 2 + 6 x + 6) =6
0 5
Rv( ) = f = 4 e
68. (a) Power of X(t) = E[X2(t)]
(i) Te = (F – 1) T0 = E[9V2(t)] + 64 – 48 E[V(t)]
= (102/10 – 1) 290 = 9E[V2(t)] + 64 – 48 E[V(t)]
2
E[V (t)] = Rv(0) = 4
= 169.6 K
(ii) Ni = k(Tant + Te) B Power of X(t) = ((9 × 4) + 64) = 100
= 1.38 × 10–23 × (50 + 169.6) 71. (b)
× 12 × 106
Y(t) = X(t) – (t – T0)
= 3.63 × 10–14 W
RY( ) = E[Y(t + ) Y(t)]
N0 = Ni × Gain
= E[X(t + ) – X(t + – T0)) (X(t) – X(t – T0))]
= 3.63 × 10–14 × 104
= E[X(t + ) X(t) – X(t) X(t + – T0)
= 3.63 × 10–10 W
–X(t + ) X(t – T0) + X(t + – T0) X(t – T0)]
69. Sol. Since, X(t) is a WSS process,
Power spectral density of x(t) = SX(f ) RY( ) = RX( ) – RX( – T0) – RX( + T0) + RX( )
2
= 2RX( ) – RX( – T0) – RX( + T0)
G( f )
SX(f ) = Rb ( ) e j 2 fn
T 72. (a)
n=
The given input power spectral density is as
Rb( ) = E[ n n – t]
follows:
= E[( n + k n – 3) ( n – t + k n – – 3)]
= E[ n n – ] + kE[n – 3 n – ] + kE[ n n – – 3] SX (f )
+ k2E[ n – 3 n – – 3] 1
f
= E[ n n – ] + kE[ n – 3 n – – 3 + 3] SX ( f ) = e
+ kE[ n n – – 3]
= R( ) + kR( – 3) + kR( + 3) + k2R( ) f
0
= (1 + k2) R( ) + kR( + 3) + kR( – 3)
Hence autocorrelation function can be defined Frequency response of the low pass filter is as
as: follows:
H(f )
1 + k2 =0
1
Rb( ) = k = ±3
0 otherwise
f (Hz)
Power spectral density, –1/2 0 1/2
E[X2(t)] = SX ( f ) df = 2 W
= = 0.2215 W 0.22 W
0 8
As, E[Y 2(t)] E[X2(t)]
75. Sol.
E[Y 2(t)] 2
So, only statement-1 is correct. Let, X1(t) = h(t) X(t)
2
73. Sol. SX1 ( f ) = H ( f ) SX ( f )
X(t) = U + Vt SX1(f ) S Z( f )
At t = 2, X(t) = X(2) = U + 2V 2 1
(0.5) 5 = 1.25
E[X(t)] = E[U + 2V]
= E[U] + 2E[V]
f (Hz) f (Hz)
Given that, E[U] = 0 –5 5 –5 5
2 y = W (t ) (t ) dt
= 0.50 H ( f ) df
2
E[Y] = E [ W (t )] (t ) dt = 0
= 0.50 h(t ) dt
1 t 2 /2 y = W (t ) (t ) dt E[Y 2 ]
Given that, h(t) = e
2
2 = S (f) Energy [ (t)]
1 1 t 2 /2 = 3×2=6
So, Py = e dt
2 2 Var [Y] = 6 – 0 = 6
50 Electronics Engineering Communication Systems
Q.1 Companding in PCM system lead to improved Q.5 In binary data transmission DPSK is preferred
signal to quantization noise ratio. This to PSK because
improvement is for (a) a coherrent carrier is not required to be
(a) lower frequency components only generated at the receiver.
(b) higher frequency components only (b) for a given energy per bit, the probability of
(c) lower amplitudes only error is less.
(c) the 180° phase shifts of the carrier are
(d) higher amplitudes only
unimportant.
[EC-1987 : 2 Marks]
(d) more protection is provided against impulse
Q.2 A signal having uniformly distributed noise.
amplitude in the interval (–V to +V), is to be [EC-1989 : 2 Marks]
encoded using PCM with uniform quantization.
Q.6 A 4 GHz carrier is DSB-SC modulated by a low
The signal to quantizing noise ratio is
pass message signal with maximum frequency
determined by the
of 2 MHz. The resultant signal is to be ideally
(a) dynamic range of the signal
sampled. The minimum frequency of the
(b) sampling rate
sampling impulse train should be
(c) number of quantizing levels
(a) 4 MHz (b) 8 MHz
(d) power spectrum signal
(c) 8 GHz (d) 8.004 GHz
[EC-1988 : 2 Marks]
[EC-1990 : 2 Marks]
Q.3 The message bit sequence to a DPSK modulator
Q.7 In a BPSK signal detector, the local oscillator
is 1, 1, 0, 0, 1, 1. The carrier phase during the
has a fixed phase error of 20°. This phase error
reception of the first two message bits is , . The
deteriorates the SNR at the output by a factor of
carrier phase for the remaining four message
(a) cos 20° (b) cos2 20°
bits is
(c) cos 70° (d) cos2 70°
(a) , , 0, (b) 0, 0, ,
[EC-1990 : 2 Marks]
(c) 0, , , (d) , , 0, 0
[EC-1988 : 2 Marks] Q.8 A signal has frequency components from
300 Hz to 1.8 kHz. The minimum possible rate
Q.4 In a digital communication system,
at which the signal has to be sampled is ____ .
transmissions of successive bits through a noisy
[EC-1991 : 2 Marks]
channel are assumed to be independent events
with error probability p. The probability of at Q.9 For the signal constellation shown in the figure,
most one error in the transmission of an 8-bit the type of modulation is _______ .
sequence is
cos2 (n/T)t
7(1 p)
(a) 7 (1 p )/8 S2 S2
p
8+ sin2 (n/T)t
8
T = symbol duration
(b) (1 – p)8 + 8p(1 – p)7 S3 S4
(c) (1 – p)8 + (1 – p)7
(d) (1 – p)8 + p(1 – p)7 [EC-1988 : 2 Marks]
[EC-1991 : 2 Marks]
GATE Previous Years Solved Paper 53
Q.10 A signal has frequency components from (b) attenuation of low frequencies in
300 Hz to 1.8 kHz. The minimum possible rate reproduction.
at which the signal has to be sampled is ____ (c) greater aliasing errors in reproduction.
(fill in the blank). (d) no harmful effects in reproduction.
[EC-1991 : 2 Marks] [EC-1994 : 1 Mark]
Q.11 The bit stream 01001 is differentially encoded Q.16 The bandwidth required for the transmission
using ‘Delay and EX-OR’ scheme for DPSK of a PCM signal increases by a factor of ____
transmission. Assuming the reference bit as a when the number of quantization levels is
‘1’ and assigning phases ‘0’ and ‘ ’ for 1’s and increased from 4 to 64.
0’s respectively, in the encoded sequence, the [EC-1994 : 1 Mark]
transmitted phase sequence becomes
Q.17 If the number of bits per sample in a PCM system
(a) 0 0 (b) 0 00
is increased from a n to n + 1, the improvement
(c) 0 0 (d) 0
in signal to quantization nose ratio will be
[EC-1992 : 2 Marks]
(a) 3 dB (b) 6 dB
Q.12 Coherrent demodulation of FSK signal can be (c) 2 n dB (d) n dB
detected using [EC-1995 : 1 Mark]
(a) correlation receiver
Q.18 A 1.0 kHz signal is flat top sampled at the rate
(b) bandpass filters and envelope detectors
of 1800 samples/sec and the samples are
(c) matched filters applied to an ideal rectangular LPF with cut-off
(d) discriminator detection frequency of 1100 Hz, then the output of the
[EC-1992 : 2 Marks] filter contains
(a) only 800 Hz component
Q.13 Source encoding in a data communication
(b) 800 Hz and 900 Hz components
system is done in order to
(c) 800 Hz and 1000 Hz components
(a) enhance the information transmission
(d) 800 Hz, 900 and 100 Hz components
(b) bandpass filters and envelope rate detectors
[EC-1995 : 1 Mark]
(c) conserve the transmitted power
(d) discriminator detection Q.19 The signal to quantization noise ratio in an n-bit
[EC-1992 : 2 Marks] PCM system
(a) depends upon the sampling frequency.
Q.14 Sketch the waveform (with properly marked
(b) is independent of the value of ‘n’.
axes) at the output of a matched filter matched
(c) increasing with increasing value of ‘n’.
for a signal s(t), of duration T, given by
(d) decreases with the increasing value of ‘n’.
2
A, for 0 t< T [EC-1995 : 1 Mark]
3
s(t ) =
2 Q.20 For a given data rate, the bandwidth Bp of a
0, for T t <T
3 BPSK signal and the bandwidth B0 of the OOK
[EC-1993 : 2 Marks] signal are related as
B B
Q.15 Increased pulse width in the flat top sampling, (a) Bp = 0 (b) Bp = 0
leads to 4 2
(a) attenuation of high frequencies in (c) Bp = B0 (d) Bp = 2B0
reproduction. [EC-1995 : 1 Mark]
54 Electronics Engineering Communication Systems
Q.32 Four independent messages have bandwidths Q.37 Consider a sample signal,
of 100 Hz, 100 Hz, 200 Hz, and 400 Hz +
y(t ) = 5 × 10 6 x(t ) n=
(t nTs )
respectively. Each is sampled at the Nyquist rate
and the samples are Time Division Multiplexed where x(t) = 10 cos(8 × 103)t and Ts = 100 msec.
(TDM) and transmitted. The transmitted sample When y(t) is passed through an ideal lowpass
rate (in Hz) is filter with a cut-off frequency of 5 kHz, the
(a) 1600 (b) 800 output of the filter is
(c) 400 (d) 200 (a) 5 × 10–6 cos(8 × 103) t
[EC-1999 : 2 Marks] (b) 5 × 10–5 cos(8 × 103) t
(c) 5 × 10–1 cos(8 × 103) t
Q.33 In a digital communication system employing
(d) 10 cos(8 × 103) t
Frequency Shift Keying (FSK), the 0 and 1 bit are
[EC-2002 : 1 Mark]
represented by sine waves of 10 kHz and 25 kHz
respectively. These waveforms will be Q.38 For a bit-rate of 8 kbps, the best possible values
orthogonal for a bit interval of of the transmitted frequencies in a coherrent
(a) 45 µsec (b) 200 µsec binary FSK system are
(c) 50 µsec (d) 250 µsec (a) 16 kHz and 20 kHz
[EC-2000 : 2 Marks] (b) 20 kHz and 32 kHz
(c) 20 kHz and 40 kHz
Q.34 A video transmission system transmits 625
(d) 32 kHz and 40 kHz
picture frames per second. Each frame consists
[EC-2002 : 1 Mark]
of a 400 × 400 pixel grid with 64 intensity levels
per pixel. The data rate of the system is Q.39 A signal x(t) = 100 cos(24 × 103) t is ideally
(a) 16 Mbps (b) 100 Mbps sampled with a sampling period of 50 µsec and
(c) 600 Mbps (d) 6.4 Gbps then passed through an ideal lowpass filter
with cut-off frequency of 15 kHz. Which of the
[EC-2001 : 2 Marks]
following frequencies is/are present at the filter
Q.35 The Nyquist sampling interval, for the signal output?
sinc(700t) + sinc(500t) is (a) 12 kHz only
1 (b) 8 kHz only
(a) sec (b) sec
350 350 (c) 12 kHz and 9 kHz
1 (d) 12 kHz and 8 kHz
(c) sec (d) sec
700 175 [EC-2002 : 2 Marks]
[EC-2001 : 2 Marks]
Q.40 At a given probability of error, binary coherrent
Q.36 During transmission over a communication FSK is inferior to binary coherrent PSK by
channel, bit errors occur independently with (a) 6 dB (b) 3 dB
probability p. If a block of n-bits is transmitted, (c) 2 dB (d) 0 dB
the probability of at most one bit error is equal to
[EC-2003 : 1 Mark]
(a) 1 – (1 p)n
(b) p + (n – 1) (1 – p) Q.41 A sinusoidal signal with peak-to-peak
amplitude of 1.536 V is quantized into 128 levels
(c) np(1 – p)n – 1
using a mid-rise uniform quantizer. The
(d) (1 – p)n + np(1 – p)n – 1
quantization noise power is
[EC-2001 : 2 Marks]
56 Electronics Engineering Communication Systems
(a) 0.768 V (b) 48 × 10–6 V2 Q.46 In a PCM system, if the code word length is
(c) 12 × 10–6 V2 (d) 3.072 V increased from 6 to 8 bits, the signal to
[EC-2003 : 2 Marks] quantization noise ratio improves by the factor
8
Q.42 If Eb, the energy per bit of a binary digital signal, (a) (b) 12
6
is 10 –5 watt-sec and the one-sided power
(c) 16 (d) 8
spectral density of the white noise,
[EC-2004 : 1 Mark]
N0 = 10–6 W/Hz, then the output of SNR of the
matched filter is Q.47 In the output of a DM speech encoder, the
(a) 26 dB (b) 10 dB consecutive pulses are of opposite polarity
during time interval t1 t t2. This indicates
(c) 20 dB (d) 13 dB
that during this interval
[EC-2003 : 2 Marks]
(a) the input to the modulator is essentially
Q.43 The input to a linear delta modulator having a constant.
step-size = 0.628 is a sinewave with frequency (b) the modulator is going through slope
fm and peak amplitude Em. If the sampling overload.
frequency fs = 40 kHz, the combination of the (c) the accumulator is in saturation.
sinewave frequency and the peak amplitude, (d) the speech signal is being sampled at the
where slope overload will take place is Nyquist rate.
Em fm [EC-2004 : 1 Mark]
(a) 0.3 V 8 kHz
Q.48 A source produces binary data at the rate of
(b) 1.5 V 4 kHz
10 kbps. The binary symbols are represented as
(c) 1.5 V 2 kHz shown in the figure.
(d) 3.0 V 1 kHz
Binary 1
[EC-2003 : 2 Marks] 1V
Q.50 Choose the correct one from among the Q.53 A signal as shown in the figure is applied to a
alternatives a, b, c, d after matching an item from matched filter. Which of the following does
Group-1 with the most appropriate item in represents the output of this matched filter?
Group-2. Input
Group-1 Group-2
1
1. FM P. Slope overload
2. DM Q. µ-law 2 3
t
1
3. PSK R. Envelope detector
4. PCM S. Capture effect –1
T. Hilbert transform
Output
U. Matched filter
(a) 1-T, 2-P, 3-U, 4-S 1
(c) 2 –6 (d) 2 –4
Q.60 The raised cosine pulse p(t) is used for zero S
[EC-2006 : 2 Marks]
in digital communications. The expression for
Q.56 In the following figure the minimum value of p(t) with unity roll-off factor is given by
the constant ‘C’, which is to be added to y1(t) sin 4 Wt
such that y1(t) and y2(t) are different, is p(t ) =
4 Wt (1 16 W 2 t 2 )
Quantizer Q with L 1
levels, step size y1(t) Same The value of p(t) at t = is
allowable signal
quantizer 4W
+ Q y2(t)
dynamic range [–V, V] (a) –0.5 (b) 0
x(t)
with range V V C
, (c) 0.5 (d)
2 2
[EC-2007 : 2 Marks]
[EC-2007 : 2 Marks] a
h(t )
Q
1
d
(b) r2
d r1
I I
t
0 T
h(t )
1
Q.78 For the constraint that the minimum distance
(c) between pairs of signal points be d for both
constellations, the radii r1 and r2 of the circles
t are
0 T
(a) r1 = 0.707 d, r2 = 2.782 d
f2 f 2 /2
(a) e (b) e AWGN
channel-2
f 2 f2
(c) e (d) e If the BER of this system is Q (b ), then the
[EC-2013 : 1 Mark] value of b is ______ .
[EC-2014 : 2 Marks]
GATE Previous Years Solved Paper 63
Q.90 In a PCM system, the signal, Q.94 The transmitted signal in a GSM system is of
m(t) = sin(100 t) + cos(100 t) 200 kHz bandwidth and 8 users share a
is sampled at the Nyquist rate. The samples are common bandwidth using TDMA. If at a given
processed by a uniform quantizer with step size time 12 users are talking in a cell, the total
0.75 V. The minimum data rate of the PCM bandwidth of the signal received by the base
system in bits per second is ______ . station of the cell will be at least (in kHz) ____ .
[EC-2014 : 2 Marks] [EC-2015 : 2 Marks]
Q.91 An M-level PSK modulation scheme is used to Q.95 A source emits bit 0 with probability 1/3 and
transmit independent binary digits over a bit 1 with probability 2/3. The emitted bits are
bandpass channel with bandwidth 100 kHz. communicated to the receiver. The receiver
The bit rate is 200 kbps and the system decides for either 0 or 1 based on the received
characteristic is a raised-cosine spectrum with value R. It is given that the conditional density
100% excess bandwidth. The minimum value functions of R as,
of M is _______ .
1
[EC-2014 : 2 Marks] , 3 r 1
f R 0 (r ) = 4
Q.92 A sinusoidal signal of 2 kHz frequency is 0 , otherwise
applied to a delta-modulator. The sampling rate
1
and step size of the delta-modulator are , 1 r 5
f R 1 (r ) = 6
20,000 samples per second and 0.1 V,
0 , otherwise
respectively. To prevent slope overload, the
maximum amplitude of the sinusoidal signal The minimum decision error probability is
(in Volts) is
64 Electronics Engineering Communication Systems
P(f )
y(t)
1
1/Ts
(a)
(a)
f (kHz)
–1.2 0 1.2
t
0 Ts 2Ts
P(f )
1
y(t )
(b)
0.5
(b) f (kHz)
–1.2 –0.8 0 0.8 1.2
P(f )
t
0 Ts 2Ts
1
(c)
y(t )
f (kHz)
–1.2 –1 0 1 1.2
1
(c) P(f )
1
t
0 Ts 2Ts (d)
f (kHz)
–1.2 0 1.2
y(t )
[EC-2017 : 1 Mark]
1
Q.106 Which one of the following statements about
(d)
Differential Pulse Code Modulation (DPCM) is
true?
t
0 Ts/2 Ts (a) The sum of message signal sample with its
prediction is quantized.
[EC-2016 : 1 Mark] (b) The message signal sample is directly
Q.104 The bit probability of a memoryless binary quantized, and its prediction is not used.
symmetric channel is 10–5. If 105 bits are sent (c) The difference of message signal sample
over this channel, then the probability that not and a random signal is quantized.
more than one bit will be in error is ______ . (d) The difference of message signal sample
with its prediction is quantized.
[EC-2016 : 2 Marks]
[EC-2017 : 1 Mark]
Q.105 In a digital communication system, the overall
pulse shape p(t) at the receiver before the sampler Q.107 In binary Frequency Shift Keying (FSK), the
given signal waveforms are:
has the Fourier transform P(f ). If the symbols
are transmitted at the rate of 2000 symbols per u0(t) = 5 cos(20000 t); 0 t T
second, for which of the following cases is the and u1(t) = 5 cos(22000 t); 0 t T
inter symbol interference zero? where T is the bit duration interval and t is in
seconds. Both u0(t) and u1(t) are zero outside the
66 Electronics Engineering Communication Systems
interval 0 t T. With a matched filter N0/2. Binary signalling, with 0 p(t) and
(correlator) based receiver, the smallest positive 1 q(t), is used for the transmission, along with
value of T (in milliseconds) required to have u0(t) an optimal receiver that minimizes the bit error
and u1(t) uncorrelated is probability. Let 1(t), 2(t) form an orthonormal
(a) 0.25 ms (b) 0.5 ms signal set. If we choose p(t) = 1(t) and q(t) = – 1(t),
(c) 0.75 ms (d) 1.0 ms we would obtain a certain bit error
[EC-2017 : 2 Marks] probability Pb.
If we keep p(t) = but take q(t ) = E 2 (t ),
1(t),
Q.108 A sinusoidal message signal is converted to a
for what value of E would be obtain the same bit
PCM signal using a uniform quantizer. The
required signal to quantization noise ratio error probability Pb?
(SQNR) at the output of the quantizer is 40 dB. (a) 0 (b) 3
The minimum number of bits per sample needed (c) 1 (d) 2
to achieve the desired SQNR is ______ . [EC-2019 : 2 Marks]
[EC-2017 : 1 Mark]
Q.112 A voice signal m(t) is in the frequency range
Q.109 A random variable X takes values –0.5 and 0.5 5 kHz to 15 kHz. The signal is amplitude
with probabilities 1/4 and 3/4, respectively. The modulated to generate an AM signal
noisy observation of X is Y = X + Z, where Z has f(t) = A(1 + m(t)) cos2 fc(t), where fc = 600 kHz.
uniform probability density over the interval The AM signal f(t) is to be digitized and
(–1, 1). X and Z are independent. If the MAP achieved. This is done by first sampling f(t) at
1.2 times the Nyquist frequency, and then
rule based detector outputs X̂ is
quantizing each sample using a 256 level
0.5 , Y < quantizer. Finally, each quantized sample is
Xˆ =
0.5 , Y binary coded using K bits, where K is the
then the value of (accurate to two decimal minimum number of bits required for the
places) is _______ . encoding. The rate, in Megabits per second
[EC-2018 : 2 Marks] (rounded off to 2 decimal places), of the resulting
stream of coded bits is ______ Mbps.
Q.110 A binary source generates symbols X {–1, 1}
[EC-2019 : 2 Marks]
which are transmitted over a noisy channel. The
probability of transmitting X = 1 is 0.5. Input to Q.113 A random variable X takes values –1 and +1
the threshold detector is R = X + N. The with probabilities 0.2 and 0.8 respectively. It is
probability density function fN(n) of the noise N transmitted across a channel which adds noise
is shown below. N, so that the random variable at the channel
fN(n) output is Y = X + N. The noise N is independent
0.5 of X, and is uniformly distributed over the
interval [–2, 2]. The receiver makes a decision
n 1 , if Y
–2 2 Xˆ =
If the detection threshold is zero, then the +1 , if Y <
probability of error (correct to two decimal where the threshold [–1, 1] is chosen so as to
places) is _______ .
minimize the probability of error Pr[ Xˆ X ].
[EC-2018 : 1 Mark]
The minimum probability of error (rounded off
Q.111 A single bit, equally likely to be 0 and 1, is to be to 1 decimal place) is ______ .
sent across an additive white Gaussian noise
[EC-2019 : 2 Marks]
(AWGN) channel with power spectral density
GATE Previous Years Solved Paper 67
Q.114 In a digital communication system, a symbol S Q.116 Consider a polar non-return to zero (NRZ)
randomly chosen from the set (s1, s2, s3, s4) is waveform, using +2 V and –2 V for representing
transmitted. It is given that, s1 = –3, s2 = –1, s3 = +1 binary ‘1’ and ‘0’ respectively, is transmitted in
and s4 = +2. The received symbol is Y = S + W. W the presence of additive zero mean white
variable and is independent of S. Pi is the Gaussian noise with variance 0.4 V2. If the a
conditional probability of symbol error for the priori probability of transmission of a binary
maximum likelihood (ML) decoding when the ‘1’ is 0.4, the optimum threshold voltage for a
transmitted symbol S = si. The index ‘i’ for which maximum a posteriori (MAP) receiver (Rounded
the conditional symbol error probability Pi is off to two decimal places) is ______ V.
the highest is ______ . [EC-2021 : 2 Marks]
[EC-2020 : 2 Marks]
Q.117 A 4 kHz sinusoidal message signal having
Q.115 A speech signal, band limited to 4 kHz is amplitude 4 V is fed to a delta-modulator (DM)
sampled at 1.25 times the Nyquist rate. The operating at a sampling rate of 32 kHz. The
speech samples, assumed to be statistically minimum step size required to avoid slope
independent and uniformly distributed in the overload noise in the DM (Rounded off to two
range –5 V to +5 V, are subsequently quantized decimal places) is ______ V.
in an 8-bit uniform quantizer and then [EC-2021 : 1 Mark]
transmitted over a voice grade AWGN telephone
Q.118 The refractive indices of the core and cladding
channel. If the ratio of transmitted signal power
of an optical fiber are 1.50 and 1.48, respectively.
to channel noise power is 26 dB, the minimum
The critical propagation angle, which is defined
channel bandwidth required to ensure reliable
as the maximum angle that the light beam makes
transmission of the signal with arbitrarily small
with the axis of the optical fiber to achieve the
probability of transmission error (Rounded off
total internal reflection, (Rounded off to two
to two decimal places) is ______ kHz.
decimal places) is ______ degree.
[EC-2021 : 1 Mark]
[EC-2021 : 1 Mark]
68 Electronics Engineering Communication Systems
9. (Sol.) 10. (3600) 11. (c) 12. (a) 13. (a) 14. (Sol.) 15. (a) 16. (3)
17. (b) 18. (c) 19. (c) 20. (c) 21. (c) 22. (d) 23. (c) 24. (d)
25. (c) 26. (a) 27. (d) 28. (a) 29. (c) 30. (b) 31. (d) 32. (a)
33. (b) 34. (c) 35. (c) 36. (d) 37. (c) 38. (a) 39. (d) 40. (b)
41. (c) 42. (d) 43. (b) 44. (b) 45. (b) 46. (c) 47. (a) 48. (c)
49. (a) 50. (c) 51. (c) 52. (b) 53. (c) 54. (c) 55. (b) 56. (b)
57. (c) 58. (a) 59. (d) 60. (c) 61. (c) 62. (b) 63. (a) 64. (b)
65. (a) 66. (a) 67. (d) 68. (a) 69. (d) 70. (a) 71. (c) 72. (b)
73. (c) 74. (c) 75. (c) 76. (c) 77. (d) 78. (d) 79. (d) 80. (c)
81. (d) 82. (b) 83. (d) 84. (d) 85. (d) 86. (b) 87. (1.414) 88. (c)
89. (0.25) 90. (200) 91. (17) 92. (a) 93. (0.4) 94. (400) 95. (d) 96. (32)
97. (a) 98. (d) 99. (35) 100. (a) 101. (0.25) 102. (16) 103. (c)
104. (0.7357) 105. (b) 106. (d) 107. (b) 108. (7) 109. (–0.50) 110. (0.125)
111. (b) 112. (11.81) 113. (0.10) 114. (3) 115. (9.26) 116. (0.04) 117. (3.14)
118. (9.39)
Solutions
Digital Communication Systems
1. (c) Area under pdf is unity,
Companding results in making SNR uniform, K[V – (–V)] = 1
throughout the signal, irrespective of amplitude 2VK = 1
levels. Since, in uniform quantization, step size 1
K=
is same, the quantization noise power is 2V
uniform, throughout the signal. 1
Thus, higher amplitudes of signal will have So, X(x) = –V to V
2V
better SNR than the lower amplitudes. =0 otherwise
Hence, companding is used for improving SNR
at lower amplitudes. x2
Signal power = s = x ( x ) dx
2. (c)
v V
Since the signal is uniformly distributed in the 2 1 1 x3
s= x dx =
interval –V to +V. So, pdf is 2V 2V 3
v V
x (x )
1 V3 ( V )3
K s=
2V 3 3
3
x 1 2V V2
–V 0 V s= =
2V 3 3
GATE Previous Years Solved Paper 69
EX-NOR 7. (b)
A B Y In BPSK if detector has a fixed phase error then
0 0 1
the output power would change by a factor
0 1 0 cos2 .
1 0 0
8. Sol.
Y = AB + AB 1 1 1
3600 samples/sec
0 is represented with a carrier has phase ‘ ’ Given that, fH = 1800 Hz,
1 is represented with a carrier has phase ‘0’ fL = 300 Hz
dk = bX dk – 1 or dk = bk dk – 1 So, B.W. = fH – fL
Logic function here is EX-NOR. = 1800 – 300
1 1 0 0 1 1 = 1500 Hz
fH 1800
K= =
1 0 1 0 0 0 B.W. 1500
0 So, K=1
Hence, the answer is 0, , , .
2 fH
(fs )min =
4. (b) K
Let getting an error be success. 2 × 1800
(fs )min =
P (success) = P 1
P (failure) = 1 – P = 3600 samples/sec
70 Electronics Engineering Communication Systems
10. Sol. t
0 T/3 2T/3 T
fs = 3600 samples/sec
fH = 1800 Hz We know that impulse-response of a matched
fL = 300 Hz filter is,
B.W. = fH – fL h(t) = x(T – t)
= 1800 – 300 = 1500 Hz h(t)
fH 1800
K= = =1 A
B.W. 1500
2 f H 2 × 1800 t
fs(min) = = 0 T/3 2T/3 T
K 1
= 3600 samples/sec The output of matched filter,
y(t) = x(t) h(t)
11. (c)
dh T
(t ) = A t A (t T )
dt 3
t
Input MOD T
y(t) = x (t ) * A t x(t ) A (t T ) dt
3
Delay
t
T
EX-NOR y(t) = A x t x (t T ) dt
3
A B Y
0 0 0 t
0 1 1 Y=A B = y1 (t ) dt
1 0 1 Y = AB + AB
t
1 1 0 y(t) = y1 (t ) dt
Given that, 0 1 0 0 1
y1(t )
Reference bit = 1
logic 0 A
2
1 1 0 0 0 1
logic 1 0° 0 0
4T/3 5T/3
t
12. (a) 0 T/3 2T/3 T 2T
Coherrent demodulation of FSK signal can be 2
–A
detected using correlation receiver.
13. (a)
y(t)
The purpose of source encoding in a data 2 A2 T
3
communication system is to increase the
information transmission rate and purpose of
channel encoding is to decrease the probability t
0 T/3 T 5T/3
of error. The channel coding helps in detection
and correction of errors.
GATE Previous Years Solved Paper 71
n2 = log264 = 6 1
(B.W.)1 = n1 f s = 2fs
(B.W.)2 = n2 f s = 6fs t
0 T
(B.W.)2 6 fs
= = 3 times
(B.W.)1 2 fs For the matched filter,
(B.W.)2 = 3 (B.W.)1 h(t) = x(T – t)
17. (b) h ( t ) = x (T – t )
18. (c) t
0 T 2T
Given that, fm = 1 kHz
f s = 1.8 K-samples/sec y(t) is a triangular pulse.
The frequency components in the sampled
22. (d)
signal are
nfs ± fm 3 2n
SQNR = 2
n = 0 fm = 1 kHz = 1000 Hz 2
n = 1 fm = 1.8 ± 1 = 800 Hz and 2800 Hz Given that, n1 = n
n = 2 3.6 ± 1 = 2600 Hz and 4600 Hz n2 = n + 1
cut-off frequency of LPF 1100 Hz. 3 2n
(SQNR)1 = 2
So, 800 Hz and 100 Hz components. 2
3 2( n + 1) 3 2 n + 2
19. (c) (SQNR)2 = 2 = 2
2 2
The signal to quantization noise ratio in an n-bit
3 2n 2
PCM system is given by = [2 2 ]
2
72 Electronics Engineering Communication Systems
25. (c) 1
Vp2 p 1
QNP = 2n
; QNP 31. (d)
12 × 2 2 2n
Maximum amplitude of matched filter output
(QNP )2 2 2 n1 2 2 × 8 2 16 1 1
= 2 n = 2 × 9 = 18 = 2 = is
(QNP )1 2 2 2 2 2 4
A2T 10 2 4
(QNP)1 = × 10 = 5 mV
(QNP)2 = 2 2
4
So, the QNP reduces by a factor of 4. 32. (a)
Sample rate = 2(100 + 100 + 200 + 400) Hz
26. (a)
= 1600 Hz
Flat top sampling of low pass signals gives rise
to aperture effect. 33. (b)
f 1 = 25 kHz and f0 = 10 kHz
27. (d)
f1 – f0 = 15 kHz
Quadrature carrier multiplexing utilizes carrier
For orthogonality,
phase shifting and synchronous detection to
n
permit two DSB signals to occupy the same f1 – f0 =
2 Tb
frequency band. It is the scheme where same
n
carrier frequency is used for two different DSB So, = 15 kbps
2 Tb
signals. It is also known as quadrature
amplitude modulation (QAM). So, quadrature n 100 n
Tb = ms = µs
multiplexing is quite different from FDM and 30 3
TDM. Among the given options, only 200 ms is the
integer multiple of (100/3) µs.
GATE Previous Years Solved Paper 73
48. (c)
Slope in region t = 3 to 4 = –1.
Rb = 10 k
B1 = 2Rb = 20 k 53. (c)
B2 = Rb = 10 k
Input x(t )
49. (a) 1
2 3
t
1
0.25 –1
Threshold
0.2 1
x(t)
0
T–t
2 1
0.2
–0.25 0
h(t)
For 0 For 1
Error 0.25 2 t
Pe(0) = = = 0.1 1 2
Total 0.25 ( 0.25) –1
GATE Previous Years Solved Paper 75
y (t ) g(t )
2
2A T 1
(2)
2
1 3 A T=2×1=2
2
2
–A T t
0 1 2
(–1)
s(t) = g(t) – (t – 2) g(t)
54. (c) = g(t) – g(t – 2)
f s = (2fm) × 3
g(t – 2)
= (2 × 1000) × 3
= 6 × 103 Hz 1
55. (b)
To avoid slope overload, t
0 2 3 4
1
t
0 2 3 4
For y1(t) and y2(t) to be different minimum step
size of /2 is needed else they will be same. –1
1
t
0 1
t
g(t) = p(t) p(t) 0 1
76 Electronics Engineering Communication Systems
1
Allocated bandwidth = 5 MHz
1
Frequency reuse factor =
5
t 1
0 1 2 Bandwidth allocated for 1 cell = 5 ×
= 1 MHz
5
s(t) = 100 (1 + m(t)) cos ct
To allocate 8 channels 200 kHz bandwidth
p(t) = 1
required.
m(t) = 0.5g(t)
Number of channels in 1 MHz
Comparing AM equation with (i) = 0.5t
1 MHz
Modulating signal = t(from equation of line) = × 8 = 40
200 kHz
Modulation index = 0.5
d E1 4 a2
sin 4 Wt So, = 2 =4
1 dt E2 a
p = d
4W 4 Wt (1 16 W 2 t 2 )
dt 65. (a)
5 2
b dx = 1 P( 2) = 1 P ( 1 ) =
3
1 3
1 1 12 2 22 1
b [ x ]1 =
5 So, NQ = + =
3 3 12 3 12 4
1 S
b[5 – 1] =
3 Hence, SQNR = N = 28
Q
1
4b =
3 68. (a)
1 There will be error if all the three received bits
b=
12 are 0 ro 2 of the three received bits are 0.
1
1 Therefore, probability of error in output
x ( x ) dx = = 3C3 p p p + 3C2 p p(1 – p)
3
1
= p3 + 3p2 (1 + p)
1
1
a (x) = 69. (d)
3
1
f s1 = 2 × W = 2 W
1 1
a [x ] 1 =
3 f s2 = 2 × W = 2 W
1 f s3 = 2 × 2 W = 4 W
a[1 – (–1)] =
3
1 1 f s4 = 2 × 3 W = 2 W
2a = a=
3 6
f s = fs1 + f s2 + f s3 + f s4
67. (d) For minimum bandwidth, n = 1
Signal power, Rb = nfs
Rb = 1 × 14 W = 14 W
S = E[ X 2 ] = x 2 f X ( x ) dx Rb
(B.W.)min =
2
1 5
14 W
= 2 ax 2 dx + bx 2 dx (B.W.)min = =7W
2
0 1
1 5 70. (a)
x3 x3
= 2 a +b Binary sequence represented by bipolar pulses.
3 3
0 1
So, B.W. = Rb = nfs
a 124b 1 124 = 8 × 8 K = 64 kHz
= 2 + =2 + =7
3 3 6 × 3 12 × 3
71. (c)
Quantization noise power,
Signal to noise ratio,
2 2
i
NQ = P( i) S0
i=1 12 6n dB
N0 dB
1 = 1 V; for –1 < x < 1
where, n = number of bits per sample quantized
2 = 2 V; for 1 < x < 5
S0
6 × 8 = 48 dB
1 N 0 dB
P( 1) = P{–1 < x < 1} = 2 a =
3
78 Electronics Engineering Communication Systems
72. (b) 2 2
1 2
Quantization noise, NQ = P( 1)+ P( 2)
12 12
S2 1 2
( 1 + 22 )
Nq = =
12 24
where, S = step size of quantization 125 1
= =
Nq 24 × 10000 1920
Nq = Signal power,
4
25
S2 S2 S=
= 3
12 12 × 4
S S 1920 × 25
S = SQNR = = = 16000
2 NQ 3
Vpp In decilogs,
S= n [SQNR] = 10 log10 (SQNR)
2
where, Vpp = peak-to-peak value = 42 dB
n = number of bits/sample 75. (c)
Vpp Vpp Vpp
= = s(t)
2n 2 2n 2 28
1
2n = 29 = 512
Therefore, number of quantization levels
required to reduce the quantization noise by a t
0 T
factor 4 would be 512.
Impulse response of the matched filter,
73. (c)
h(t) = s(T – t)
Signal power,
s(T + t) is the left-side shifted version of s(t) by T.
5
1 2 25
S= x 2 f X ( x ) dx = x dx = s(T + t)
10 3
5
1
SQNR = 43.5 dB (or) 10(4.35)
2
S
NQ = = t
12 SQNR –T 0
1 79. (d)
s(t) = 2 2
[cos (700 t 500 t ]
2 t Pe Es for both cases
–cos(700 t + 500 t)]
Es1 r 0.707 d
1 So, = 1 =
s(t) = 2 2
[cos(200 t ) cos(1200 t )] Es2 r2 1.307 d
2 t
Maximum frequency component, Es2 2
1.307
1200 = = 3.42
= 600 Hz
fm = Es1 0.707
2
To achieve same error, 2nd must have 3.42 time
Nyquist sampling rate,
than 1st.
fsmin = 2fm = 1200 Hz
The value in dB = 10 log(3.42)
77. (d) = 5.33 dB
Quantized levels are equiprobable.
80. (c)
Hence, H = log2 4 = 2 bits/sample
Rb
r = 2 samples/sec B.W. = (1 + )
2
Hence, information rate
Rb
R = r H = 2 samples/sec × 2 bits/sample 3500 = (1 + 0.75)
2
R = 4 bits/sec
Rb = 4000 bits/sec
78. (d) In base band transmission,
Symbol rate = Bit rate = 4000 symbols/sec
For M-ary: d = 2 sin Es
M 81. (d)
Distance of any point from origin is Es . 7/8
P(x0) = 9/10 x0 y0
For 4-ary, r1 = Es1
1/8
For 8-ary, r2 = Es2 1/8
z = Q (b )
–1 0 4/5 1 2 4
So, b= 2 = 1.414
GATE Previous Years Solved Paper 81
91. Sol. r
–3 –1 0 1 5
Rb
B= (1 + )
log 2 M From the above figure, it is clear that,
200 × 2 f R (r |s0 ) P(s0 ) > f R (r |s1 ) P(s1 ) for r < –1
100 =
log 2 M
log2 M = 4 f R (r |s1 ) P(s1 ) > f R (r |s0 ) P(s0 ) for r > –1
So, M = 16 So, optimum threshold will be rTh = –1
82 Electronics Engineering Communication Systems
For rTh = –1, But shifting does not change the energy
P(r0|s1) P(s1) = 0 Eh = Es
1 1 2Es
P(r1|s0) P(s0) = [1 ( 1)] = and (SNR)max =
12 6 N0
Pe(min) = P(r0|s1) P(s1) + P(r1|s0) P(s0)
101. Sol.
1
= Channel spectrum 500 Hz – 2000 Hz
6
Hence, B.W. = 1500 Hz
96. Sol. Rb
B.W. = (1 + )
SNR of uniform quantized sinusoidal signal is log 2 M
given by
Rb
SNR = 1.8 + 6n 1500 = (1 + )
log 2 16
31.8 = 1.8 + 6n
n=5 4800
1500 = (1 + )
Thus total number of levels = 25 = 32. log 2 16
1500 = 1200 (1 + )
97. (a)
= 0.25
E
Since, SNR = 102. Sol.
2
Thus for having minimum error we have to f s = 8 kHz
select signal with maximum energy. n = 8 bits/sample
Energy of signal 1 = 1 M=4
Rb R
1 (B.W.)min = = b
Q Energy of signal 2 = 2 log 2 M 4
3
1 8× 8
= = 16 kHz
Energy of signal 3 = 4
3
1 103. (c)
Energy of signal 4 =
3 P(t )
98. (d) 1 / Ts
(GMSK) is used to transmit GSM signals.
99. Sol.
Bit rate, Rb = 56 kbps t
0 Ts
Roll-off factor, = 0.25
Impulse response of matched filter,
Rb
Transmission B.W. = (1 + ) h(t) = P(Ts – t)
2
P(Ts – t ) = h(t)
56
= (1.25) = 28 × 1.25
2 1 / Ts
= 35 kHz
100. (a)
When the signal to noise ratio is maximum, t
0 Ts
h(t) = s(T – t)
GATE Previous Years Solved Paper 83
p( f nRb ) = Constant 1 3
P(x0) = ; P( x1 ) =
n= 4 4
x0
So, only option (b) satisfies this condition for
MAP criteria, fY ( y|x0 ) P( x0 ) > fY ( y|x1 ) P( x1 )
given Rb. <
x1
106. (d) fy
1 3 3
In DPCM, difference of message signal sample 1 1 1
f y ( y| x1 ) ( Px1 ) = × =
2 4 8
f y ( y |x0 ) ( Px0 ) = × =
with its prediction is quantized. 2 4 8
107. (b)
y
u0(t) = 5 cos 20000 t –1.5 –1 –0.5 0 0.5 1 1.5
r
–3 –2 –1 0 1 2 3
1 1 1 1 113. Sol.
So, Pe = + = = 0.125
2 8 8 8 MAP criteria should be used to minimize the
probability of error,
11. (b) +1
When, p(t) = fY ( y|+1) P( +1) > fY ( y| 1) P( 1)
1(t) and q(t) = – 1(t) : <
1
dmin
1 (t )
P(+1) = 0.80 and P(–1) = 0.20
–1 1
dmin = 2
fY(y|+1) P(+1)
When, p(t) = 1(t) and q(t) = E 2 (t ) :
fY(y|–1) P(–1)
2(t) 4/20
1/20
E y
–3 –1 0 1 3
dmin
Optimum threshold exists here
1 (t )
1 1
Pe (min) = shaded area = 2 × = 0.10
20
dmin = ( E )2 + 1 = E + 1
To obtain same bit error probability, dmin should 114. Sol.
be same. Since the noise variable is Gaussian with zero
mean and ML decoding is used, the decision
So, E+1 = 2
E=3 boundary between two adjacent signal points
will be their arithmetic mean.
GATE Previous Years Solved Paper 85
transmitted. 5
1 x3 25
= =
10 3 3
5
P1 = 1 – (shaded area)
n = 8 (8-bit uniform quantizer)
rb = nfs = 8 × 10 k = 80 kbps
–3 –1 +1 +2
For reliable transmission, R C
–2
S
R B log 1 +
N
P2 = 1 – (shaded area)
S
= 102.6 = 397.107
N
80 × 103 B log2 (1 + 398.107)
–3 –1 +1 +2
–2 0 80 × 103 B × 8.64
P3 = 1 – (shaded area)
80 × 10 3
B 9.259 = 9.26 kHz
8.64
116. (0.04)
+2 +1 –1 0 +1
1 0
1.5
0 Tb
P4 = 1 – (shaded area)
+2
–2
Tb
+2 +1 –1 +1 1.5
N0
2
Noise variance = = 2 = 0.4
2
By comparing the above graphs, we can P(1) = (0.4), P(0) = 0.6
conclude that P3 is larger among the four. Optimum threshold
2
115. (9.26) S0 + S1 P(0)
= + ln
fm = 4 kHz 2 S1 S0 P(1)
f s = 1.25 × NR
2+2 0.4 0.6
= 1.25 × 2 × fm VTh = + ln
2 2 ( 2) 0.4
= 1.25 × 2 × 4 k
= 10 k-samples/sec 0.4
= ln 1.5
4
fX(x)
= 0.0405 = 0.04 V
1/10
117. (3.14)
x fm = 4 kHz
–5 0 5
Am = 4 V
Message signal power f s = 32 kHz
86 Electronics Engineering Communication Systems
n2 Cladding
= sin–1[0.9866] = 80.6
1 = 90 – C
C
t
Core = 9.39°
1
n1
Core axis
n2
4 Information Theory & Coding
Q.1 A source produces 4 symbols with probability and bandwidth B has capacity C1. If the SNR is
doubled keeping B constant, the resulting
1 1 1 1
, , and . For this source, a practical capacity C2 is given by
2 4 8 8
(a) C2 2C1 (b) C2 C1 + B
coding scheme has an average codeword length
(c) C2 C1 + 2B (d) C2 C1 + 0.3B
of 2 bits/symbols. The efficiency of the code is
[EC-2009 : 2 Marks]
7
(a) 1 (b) Q.6 A source alphabet consists of N symbols with
8
the probability of the first two symbols being
1 1
(c) (d) the same. A source encoder increases the
2 4
probability of the first symbol by a small amount
[EC-1989 : 2 Marks]
and decreases that of the second by . After
Q.2 An image uses 512 × 512 picture elements. Each encoding, the entropy of the source
of the picture elements can take any of the 8 (a) increases
distinguishable intensity levels. The maximum (b) remains the same
entropy in the above image will be (c) increases only if N = 2
(a) 2097152 bits (b) 786432 bits (d) decreases
(c) 648 bits (d) 144 bits [EC-2012 : 1 Mark]
[EC-1990 : 2 Marks]
Q.7 Let U and V be two independent and identically
Q.3 A source generates three symbols with distributed random variables such that,
probabilities 0.25, 0.25, 0.50 at a rate of 3000
1
symbols per second. Assuming independent P (U = +1) = P (U = 1) =
2
generation of symbols, the most efficient source
The entropy H(U + V) in bits is
encoder would have average bit rate is
(a) 6000 bits/sec (b) 4500 bits/sec
3
(a) (b) 1
4
(c) 3000 bits/sec (d) 1500 bits/sec
[EC-2006 : 2 Marks] 3
(c) (d) log2 3
2
Q.4 A memoryless source emits n symbols each with [EC-2013 : 2 Marks]
a probability p. The entropy of the source as a
function of n Q.8 In a code-division multiple access (CDMA)
(a) increases as log n system with N = 8 chips, the maximum number
of users who can be assigned mutually
(b) decreases as log (1/n)
orthogonal signature sequences is ______ .
(c) increases as n
[EC-2014 : 1 Mark]
(d) increases as n log n
[EC-2008 : 2 Marks] Q.9 The capacity of a Binary Symmetric Channel
(BSC) with crossover probability 0.5 is _____ .
Q.5 A communication channel with AWGN
[EC-2014 : 1 Mark]
operating at a signal to noise ratio SNR >> 1
88 Electronics Engineering Communication Systems
Q.10 A fair coin is tossed repeatedly until a ‘Head’ Q.14 A discrete memoryless source has an alphabet
appears for the first time. Let, L be the number of {a1, a2, a3, a4} with corresponding probabilities
tosses to get this first ‘Head’. The entropy H(L)
in bits is ________ .
[EC-2014 : 2 Marks]
{ 1 1 1 1
}
, , , . The minimum required average
2 4 8 8
P= { 1 1 1 1 1
, , , ,
2 4 8 16 32
,..... } Q.16 An analog baseband signal, band-limited to
100 Hz, is sampled at the Nyquist rate. The
The entropy of the source (in bits) is _______ . samples are quantized into four message
[EC-2016 : 2 Marks] symbols that occur independently with
probabilities, p1 = p4 = 0.125 and p2 = p3. The
Q.13 A digital communication system uses a information rate (bits/sec) of the message source
repetition code for channel encoding/decoding. is ________ .
During transmission, each bit is repeated three [EC-2016 : 1 Mark]
times (0 is transmitted as 000, and 1 is
transmitted as 111). It is assumed that the source Q.17 A voice-grade AWGN (Additive White
puts out symbols independently and with equal Gaussian noise) telephone channel has a
probability. The decoder operates as follows. In bandwidth of 4.0 kHz and two-sided noise
a block of three received bits, if the number of
zeros exceeds the number of ones, the decoder
power spectral density = 2.5 × 10 5 Watt/Hz.
2
decides in favor of a 0, and if the number of ones
If information at the rate of 52 kbps is to be
exceeds the number of zeros, the decoder decides
transmitted over this channel with arbitrarily
in favor of a 1. Assuming a binary symmetric
small bit error rate, then the minimum bit-energy
channel with crossover probability p = 0.1. The
Eb (in mJ/bit) necessary is _______ .
average probability of error is _______ .
[EC-2016 : 2 Marks]
[EC-2016 : 2 Marks]
GATE Previous Years Solved Paper 89
(a)
codeword has a fixed length of 5 bits. The
Hamming distance between any pair of distinct
p
0 1 codwords in this code is at least 2. The
maximum number of codewords such a code
can contain is ________ .
[EC-2018 : 1 Mark]
1
Capacity
(c)
[EC-2019 : 1 Mark]
9. (0) 10. (2) 11. (a) 12. (2) 13. (0.028) 14. (1.75) 15. (0.811) 16. (362.2)
17. (31.504) 18. (0) 19. (c) 20. (c) 21. (16) 22. (b) 23. (b) 24. (c)
25. (a, b, d) 26. (3) 27. (1) 28. (0.85) 29. (0.23)
Solutions
Information Theory & Coding
1. (b) where, Pi = probability of individual symbol.
n Since probability of each symbol is same,
Entropy = H = Pi log 2 ( Pi ) therefore,
i =1 1
P1 = P2 = ... = Pn =
H=
1
log 2
1 1
+ log 2
1 1
+ log 2
1 1
+ log 2
1 n
2 2 4 4 8 8 8 8
n
1 1
1 1 1 1 H(m) = log = log n
H = + ×2+ ×3+ ×3 i=1 n n
2 4 8 8
3 7
H = 1+ = 5. (b)
4 4
SNR >> 1
H
Code efficiency = =
× 100%
L S S
C 1 = B log 2 1 + B log 2
7 /4 7 N N
= × 100% =
2 8
when SNR is doubled.
2. (b) 2S
C B log 2
n= log2 L N
n= log2 8 = 3 S
= B log 2 + B log 2 2 = C1 + B
Maximum entropy N
=B
= 512 × 512 × n = C1
= 512 × 512 × 3
6. (d)
= 786432 bits/image
We know that entropy is maximum when
3. (b) symbols are equal probable so if probability will
Bit rate = H Rb change from equal to non-equal entropy will
1 1 1 decrease.
H = 0.25 log + 0.25 log + 0.5 log
0.25 0.25 0.5
7. (c)
1 1 1 3
H= + + = = 1.5
2 2 2 2 U V (U + V )
Bite rate = 1.5 × 3000 = 4500 bits/sec
+1 +1 +2
4. (a) +1 –1 0
n –1 +1 0
Entropy, H(m) = Pi log Pi bits
i =1 –1 –1 –2
92 Electronics Engineering Communication Systems
1 1 1 11. (a)
P(U + V = +2) = =
2 2 4
P
1 1 1 C = W log 2 1 + 2
P(U + V = 0) = + = W
4 4 2
2
1 1 1 P P
= C= × W log 2 1 +
P(U + V = –2) = 2 P 2
W
2 2 4
When, W
1 1
H(U + V) = log 2 2 + 2 × log 2 4 2
2 4 P W P
C = 2 W
lim log 2 1 + 2
P W
1 3
= +1= 2
W
2 2 As, W , also
P
9. Sol.
2
P W 1
Channel capacity of BSC is, C = lim log 2 1 +
2 2W P 2 W
C = P log2 P + (1 – P) log2(1 – P) + 1 P P
C = 0.5 log2 0.5 + 0.5 log2 0.5 + 1
1
C=0 lim x log 2 1 + = log 2 e
x x
It is the case of channel with independent input
and output, hence C = 0. P
C = 2
log 2 e
10. Sol.
P
If P = 1, i.e. if 1 toss is required to gets first head. C = 1.44 2
Then probability to get the first head.
1 12. Sol.
P1 =
2 Entropy of source is given as,
If P = 2, i.e. if 2 tosses are required to get first N
1
head. H= Pi log 2 (Here, N = )
i =0 Pi
Then probability to get the first head.
1 1 1 1
1 1 1 = 2 log 2 2 + 4 log 2 4 + 8 log 2 8 + 16 log 2 16 + ...
× =
P2 =
2 2 4
...(i)
Then probability to get the first head.
k
1 1 1 1 1
= k
P3 = × × = 2
2 2 2 8 k =0
Entropy,
2 3 4
H 1 1 1
N
1 = + 2× + 3× + ... ...(ii)
H= Pi log 2 2 2 2 2
i=1 Pi
Subtracting (ii) from (i),
1 1 1 1 1 1 1 1
= log 2 + log 2 + log 2 + log 2 + ... 2 3
2 1/2 4 1/4 8 1/8 16 1/16 H 1 1 1
= + + + ...
1 1 1 1 2 2 2 2
= × 1 + × 2 + × 3 + × 4 + ...
2 4 8 16 1
1 2 3 4 H 2
= 2 + 2 + 3 + 4 + ... 2
=
1
=1
(2) (2) (2) 1
H 2 2
H = 2 bits/symbol
GATE Previous Years Solved Paper 93
2k 2
So, k
p 2 (2 1) 5
0 0.5 1
2k 4
k 5
20. (c) 2 1
For any value of k, the above bound will be
Given that,
satisfied. But as n > k and n is fixed at 5, the
Y 0.25 0.75 maximum value of k that can be selected is 4. So,
P =
X 0.25 0.75 the maximum number of codewords possible is
If mutual information I(X : Y) = 0 for every 24 = 16.
possible input distribution, then the channel is
22. (b)
called as useless (or) zero-capability channel.
00 01 000 01 11
Let, [P(X)] = [ (1 – )]
Then, 00 11 110 01 10
H(X) = – log2 – (1 – ) log2 (1 – ) bits/symbol 00 10 110 00 01
Y
[P(Y)] = [ P(Y )] P = [0.25 0.75] 23. (b)
X
Probability of error in decoding single bit =
3 Then probability of no error will be 1 – .
4 4 Total N-bits transmitted, so that probability of
[P(X, Y)] =
(1 ) 3(1 ) no error in received block
4 4 = (1 – ) (1 – ) ... N times
= (1 – )N
X [ P( X , Y )]
P = = The probability of received block is erroneous is
Y [ P(Y )]d (1 ) (1
= 1 – (1 – )N
X xi
H = P( xi , yi ) log 2 P 24. (c)
Y i j yi
P0 P1 P2 d0 d1 d2 d3
Bits/symbol
0 1 0 1 1 0 0 C1
= – log2 – (1 – ) log2 (1 – )
0 0 1 1 1 1 0 C2
Bits/symbol
1 0 0 0 1 1 0 C3
X
I(X, Y) = H ( X ) H =0 P 0 = d0 d1 d3
Y
P 1 = d1 d2 d3
So, the given binary memoryless channel is a
P 2 = d0 d1 d2
‘useless’ channel.
GATE Previous Years Solved Paper 95
1
H(X) = PX ( xi )log 2
i PX ( xi )
1 1 1 X
= log 2 4 + log 2 2 + log 2 4 0
4 2 4
H(X) = 1.5 bits/symbol Here distinct ‘X’ values results in distinct ‘Y’
Let, Y = 2X values.
X Y P (Y ) So that, H(X) = H(Y)
–1 –2 1/4 i.e., H(X) = H(2X)
0 0 1/2 Option (d) is true.
1 2 1/4
26. (3)
Y {yi} –2 0 2 Given that symbol stream contains alternate
1 1 1 QPSK and 16-QAM symbols. Symbol rate given
PY{yi}
4 2 4 as 1 mega symbols per second,
Bit rate = Symbol rate × log2 M
1
H(2X) = H (Y ) = PY ( yi )log 2 For QPSK:
i PY ( yi )
= 1.5 bits/symbol symbol bits
Bit rate = 1 M × log 2 4
For Y = 2X, distant ‘X’ values results in distinct sec symbol
‘Y’ values so that, Bit rate = 2 Mbps
H(X) = H(Y)
So, option (b) is true.
96 Electronics Engineering Communication Systems
–1
1–
x2 b b y2
Cs will be maximum at = 0 and 1.
Given, [0.25, 1]
So that, = 1 will be the correct answer.
x3 c c y3
1–
Channel capacity,
28. (0.85)
C s = Max[I(X ; Y)]
Given, (7, 4) Hamming code.
Y Number of bits in the transmitted codeword = 7
I(X ; Y)] = H (Y ) H
X Given is binary symmetric channel P(0/1) =
P(1/0),
Y 3 3 yj P(0/1) = P(1/0) = = 0.1
where, H = P(xi , y j ) log 2 P
X i =1 j=1 xi Probability of correct decoding of codeword (Pc)
= Probability of almost one bit error,
Pc = No error (or) 1 bit error
y1 y2 y3
When ‘n’ bits transmitted probability of getting
x1 1 0
Y error in ‘r’ bits is nCr Pr(1 – P)n – r.
P = x2 0 1
Where ‘p’ is bit error probability,
X
x3 0 1
P(1/0) = P(0/1) = 0.1
Pc = 7C0(0.1)0 (1 – 0.1)7 – 0 +
For simplification convenience, let [P(X)] = 7C (0.1)1 (1 – 0.1)7 – 1
1
[1 0 0], = (0.9)7 + 7 × 0.1 × (0.9)6
Y Pc = 0.8503
[P(X, Y)] = [ P( X )d P
X
29. (0.23)
1 0
[P(X, Y)] = 0 0 0
fY |XA (y) fY|XB(y )
0 0 0
Y
H = {(1 )log 2 (1 ) + log 2 }
X
y
–1 0 1
GATE Previous Years Solved Paper 97
1 1
xA ( y + 1)
PeX = fY|X A ( y ) dy = e u( y + 1) dy
> A
0 0
ML decoding fY|X A ( y ) f (y )
< Y|XB 1
xB ( y + 1) 1 2
= e dy = e e = 0.23
0
i.e., fY|X (y) > fY|X (y) Decision favour of XA
A B 0 0
i.e., fY|X (y) < fY|X (y) Decision favour of XB PeX = fY|XB ( y ) dy = e( y 1)
[1 u( y 1)] dy
A B B
For –1 < y < 0 and 1 < y < fY/X (y) > fY/X (y) 1 1
A B
For above internal decision in favour of XA. 0
For – < y < –1 and 0 < y < 1 fY|X (y) > fY/X (y)
= ey 1
dy = e 1
e 2
= 0.23
B A 1
For above internal decision in favour of XB,
Pe = P(XA) × 0.23 + P(XB) × 0.23
Pe = P( X A ) PeX + P( X B ) PeX
A B = 0.23[P(XA) + P(XB)]
PeX Probability of error XA transmitted Pe = 0.23
A
Control Systems
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
G1G2 G3G4
Q.1 In the signal flow graph shown in figure (d)
(1 + G1 + G2 + G3 + G4 )
X2 = TX1 where T, is equal to
[EC-1989 : 2 Marks]
0.5
Q.4 In the signal flow graph of figure the gain c/r
will be
5 5
X1 X2
s
Q.5 Signal flow graph is used to find
(a) stability of the system
–2 I1(s) I2(s )
Vi(s) Z 3 (s ) Z4(s)
5
(a) 3 (b)
2
(c) 2 (d) None of the above
Fig. (a)
[EC-1997 : 2 Marks]
Q.8 The equivalent of the block diagram in the figure G1 I1(s ) G2 I2(s) G3
is given as, Vi(s ) Vo(s )
E G1 G2 C H
Fig. (b)
Z3 (s) Z3 (s)
(a) ,
F H Z2 (s) + Z3 (s) + Z4 (s) Z1 (s) + Z3 ( s)
Z3 (s) Z3 (s)
(b) ,
E G1 C Z2 (s) Z3 (s) + Z4 (s ) Z1 (s) + Z3 (s)
Z3 (s) Z3 (s)
(a) (c) ,
Z2 (s) + Z3 (s) + Z4 (s) Z1 (s) + Z3 ( s)
F H/G2
Z3 (s) Z3 (s)
(d) ,
Z2 (s) Z3 (s) + Z4 (s ) Z1 (s) + Z3 (s)
E G1G2 C [EC-2001 : 2 Marks]
(b) Q.10 The signal flow graph of a system is shown in
HG2 the figure. The transfer function C(s)/R(s) of the
F
system is
1 1/s 6 1/s
E G1 C R(s)
–3
(c) 1 –2
–4
F HG2
C(s )
6 6s
E G1G2 C (a) 2 (b) 2
s + 29s + 6 s + 29s + 6
(d) s (s + 2) s (s + 27)
(c) 2 (d) 2
s + 29s + 6 s + 29s + 6
F H/G2
[EC-2003 : 2 Marks]
[EC-2001 : 1 Mark] Q.11 Consider the signal flow graph shown in the
Q.9 An electrical system and its signal flow graph figure. The gain x5/x1 is
representation are shown in the Fig. (a) and (b) a x2 b x3 c x4 d x5
x1
respectively. The values of G2 and H, repectively,
are:
e f g
GATE Previous Years Solved Paper 3
1 ( be + cf + dg ) –100
(a)
abc
1/s 1/s 1/s 100
(b) u y
bedg
(b)
1 (be + cf + dg )
–20
abcd
(c) –100
1 (be + cf + dg ) + bedg
1/s 1/s 1/s 100
1 ( be + cf + dg ) + bedg (c) u y
(d)
abcd
–20
[EC-2004 : 2 Marks]
–100
Q.12 The transfer function Y(s)/R(s) of the system
shown is (d) u
1/s 1/s 1/s 100 y
+ 1 [EC-2011 : 2 Marks]
R(s ) Y(s )
s+1
– Q.14 The signal flow graph for a system is given
+ below. The transfer function Y(s)/U(s) for this
1
s+1 – system is
1
1 s–1 s–1 1
1
(a) 0 (b) U(s ) Y(s )
s+1
2 2 –4
(c) (d)
s+1 s+3
–2
[EC-2010 : 1 Mark]
s+1 s+1
Q.13 The input-output transfer function of a plant (a) 2 (b) 2
5s + 6 s + 2 s + 6s + 2
100 s+1 1
H (s) = . The plant is placed in a unity (c) (d)
s (s + 10) 2 s 2 + 4s + 2 5s 2 + 6 s + 2
[EC-2013 : 2 Marks]
negative feedback configuration as shown in
the figure below. Q.15 For the following system,
X2 ( s )
+ u 100
r H (s ) = y
s (s + 10)2 X1(s ) +
s
+
+ 1
Y(s )
– – s+1 – s
Plant
Q.18 For the signal flow graph shown in the figure, Q.21 The block diagram of a feedback control system
the value of C(s)/R(s) is is shown in the figure. The overall closed-loop
–H 3 gain G of the system is
X + G2 + G1 Y
– –
1 X1 X3 1 X4
R(s) G1 X2 G2 G3 X5 G4 C(s ) H1
G1 (s)
(b)
G2 (s) [EC-2017 : 1 Mark]
GATE Previous Years Solved Paper 5
s b d e
– +
+
X(s) 1/s Y(s ) a h
x
– +
1/s
k I f
m
y
2 g
s +1
(a) H (s ) =
2s2 + 1 n
2
s +1 [EE-1991 : 2 Marks]
(b) H (s ) =
s + 2s 2 + s + 1
3
Q.2 The overall transfer function of the system
s+1
(c) H (s ) = shown in figure is
s2 + s + 1
+
s2 + 1 G
(d) H (s ) = 3 2 +
s +s +s+1
[EC-2019 : 2 Marks] H +
w y
Q.24 The block diagram of a feedback control system H +
X(s) +– G1 +
+ Y(s ) G 2G
(a) (b)
1 GH 1 GH
H GH GH
(c) (d)
1 GH 1 H
Y (s ) [EE-1992 : 1 Mark]
The transfer function of the system is
X( s )
Q.3 Signal flow graph is used to obtain the
G1 + G2
(a) (a) stability of a system.
1 + G1 H
(b) transfer function of a system.
G1 + G2 + G1G2 H (c) controllability of a system.
(b)
1 + G1 H
(d) observability of a system.
G1 + G2 + G1G2 H [EE-1993 : 1 Mark]
(c)
1 + G1 H + G2 H
Q.4 The closed loop transfer function of a control
G1 + G2
(d) system is given by
1 + G1 H + G2 H
C (s) 2 (s 1)
[EC-2021 : 1 Mark] =
R(s ) ( s + 2) (s + 1)
6 Electronics Engineering Control Systems
For a unit step input the output is Q.8 A control system is defined by the following
(a) –3e–2t + 4e–t – 1 (b) –3e–2t – 4e–t + 1 mathematical relationship
(c) zero (d) infinity d2 x dx
2
+6 + 5x = 12 (1 e 2t )
[EE-1995 : 1 Mark] dt dt
The response of the system as t is,
Q.5 For block diagram shown in figure C(s)/R(s) is
given by (a) x = 6 (b) x = 2
(c) x = 2.4 (d) x = –2
H2
[EE-2003 : 1 Mark]
–
R(s) +
–
G1 + G2 G3 C(s ) Q.9 A control system with certain excitation is
governed by the following mathematical
H1 equation,
G1G2 G3 d2 x 1 dx 1
(a) 2
+ + x = 10 + 5 e 4t + 2 e 5t
1 + H 2 G2 G3 + H1G1G2 dt 2 dt 18
The nature time constants of the response of the
G1G2 G3
(b) system are
1 + G1G2 G3 H 1 H 2
(a) 2s and 5s (b) 3s and 6s
G1G2 G3 (c) 4s and 5s (d) 1/3 and 1/6s
(c)
1 + G1G2 G3 H 1 + G1G2 G3 H 2
[EE-2003 : 2 Marks]
G1G2 G3
(d) Q.10 The block diagram of a control system is shown
1 + G1G2 G3 H 1
in figure. The transfer function G(s) = Y(s)/U(s)
[EE-1998 : 2 Marks]
of the system is
Q.6 A linear time invariant system initially at rest, 9
when subjected to a unit step input, gives a
response y(t) = te–t, t > 0. The transfer function of – for for y(t)
+– 2 +–
integrator integrator
the system is
1 1
(a) (b) 3 12
(s + 1) 2 s(s + 1)2
1
s s (a)
(c) (d) s s
(s + 1)2 s ( s + 1) 18 1 + 1+
12 3
[EE-2000 : 1 Mark]
1
(b)
Q.7 The transfer function of the system described s s
27 1 + 1+
6 9
d2 y
dy du
by +
= + 2u with ‘u’ as input and ‘y’
2 dt dt 1
dt (c)
as output is s s
27 1 + 1+
(s + 1) 12 9
(s + 2)
(a) (b)
2
(s + s) (s2 + s) 1
(d)
2 2s s s
27 1 + 1+
(c) 2 (d) 2 9 3
(s + s) (s + s)
[EE-2002 : 2 Marks] [EE-2003 : 2 Marks]
GATE Previous Years Solved Paper 7
Q.11 For a tachometer, if (t) is the rotor displacement Q.15 The system shown in figure below:
in radians, e(t) is the output voltage and Kt is
the tachometer constant (in V/rad/sec), then
the transfer function, E(s)/Q(s) will be b0 c0 b1 c1
s2 + 1 s2 + s + 1 Z
(a) (b)
s2 s2
with
s2 + s + 1 1 1
(c) (d) (a) X = c0 s + c1 , Y = , Z = b0 s + b1
s s2 + s + 1 (s 2 + a0 s + a1 )
[EE-2004 : 2 Marks] (c 0 s + c 1 )
(b) X = 1, Y = 2
, Z = b0 s + b1
Q.13 The unit impulse response of a second order (s + a0 s + a1 )
under damped system starting from rest is given (b1 s + b0 )
(c) X = c1 s + c0 , Y = ,Z=1
by 2
(s + a1s + a1 )
c(t) = 12.5 e–6t sin8t, t 0 1
(d) X = c1s + c0 , Y = 2
, Z = b1s + b0
The steady-state value of the unit step response (s + a1s + a0 )
of the system is equal to [EE-2007 : 2 Marks]
(a) 0 (b) 0.25
Q.16 A function y(t) satisfies the following differential
(c) 0.5 (d) 1.0
equation,
[EE-2004 : 2 Marks]
dy(t )
+ y (t ) = ( t )
Q.14 When subjected to a unit step input, the closed dt
loop control system shown in the figure will where, (t) is the delta function.
have a steady-state error of Assuming zero initial condition, and denoting
the unit step function by u(t), y(t) can be of the
X(s) form
– 2
R(s) + 3/s + Y(s )
– s+2 (a) et (b) e–t
(c) et u(t) (d) e–t u(t)
[EE-2008 : 1 Mark]
(a) –1.0 (b) –0.5
Q.17 The response h(t) of a linear time invariant
(c) 0 (d) 0.5
system to an impulse (t), under initially relaxed
[EE-2004 : 2 Marks]
condition is h(t) = e–t + e–2t. The response of this
system for a unit step input u(t) is
8 Electronics Engineering Control Systems
1
1 G1 G2
Y(s )
1 s–1 s–1 1
U(s ) Y(s )
–4
–1 –1
–2
G1 G2
s+1 s+1 (a) (b)
(a) (b) 1 + G2 (1 + G1 ) 1 + G1 (1 + G2 )
5s 2 + 6 s + 2 s 2 + 6s + 2
s+1 1 G1 G2
(c) (d) (c) (d)
5s 2 + 6 s + 2 1 + G1 G2 1 + G1 G2
s 2 + 4s + 2
[EE-2013 : 2 Marks] [EE-2015 : 1 Mark]
Q.20 The signal flow graph of a system is shown Q.22 Find the transfer function Y(s)/X(s) on the
below. U(s) is the input and C(s) is the output. system given below.
h1 +– G1
h0 1 1/s 1 1/s 1
U(s) C(s ) X(s) + Y(s )
H
Y(s ) +
–a1
–
+ G2
–a0
GATE Previous Years Solved Paper 9
–R U2 e
–1
1 (a + c) d 1
1 1 (a)
U1 1/L 1/s k1 1/J 1/s Y
e
1 a( d + c) 1
(b)
–k2
k1 e
(a)
JLs 2 + JRs + k1 k2 a
c
1 1 cd 1
k1 (c)
(b)
JLs 2 JRs k1 k2
e
k1 U 2 ( R + sL )
(c) 2 d
JLs + ( JR U 2 L ) s + k1 k2 U 2 R a
1 cd
1 1
(d)
k1 U 2 (sL R )
(d) 2
JLs ( JR + U 2 L ) s k1 k2 + U 2 R
e
[EE-2017 : 2 Marks] [EE-2020 : 2 Marks]
10 Electronics Engineering Control Systems
Answers
EC Basics of Control Systems, Block Diagram and SFG’s
9. (c) 10. (d) 11. (c) 12. (b) 13. (d) 14. (a) 15. (d) 16. (c)
17. (b) 18. (b) 19. (b) 20. (–0.5) 21. (b) 22. (1) 23. (b) 24. (a)
Solutions
EC Basics of Control Systems, Block Diagram and SFG’s
1. Sol. C G1G2 G3 G4
=
X2 5 5 5 R 1 [G1 G2 G3 G4 ]
= = = = 10
X1 1 (0.5) 0.5 + [G1G3 + G1G4 + G2 G3 + G2 G4 ]
7. (c) (s + 27)
s
C PK K =
= 29 6
1+ +
R s s2
C 5× 2× 1 10 10
= = = =2 C (s) s (s + 27)
R 1 ( 4) 1 + 4 5 = 2
R(s ) s + 29s + 6
8. (d)
11. (c)
Take off point is moved after G2 so H/G2.
P1 = abcd, 1 = 1
9. (c) L1 = be, L2 = cf, L3 = dg
From KVL in both loops: Non-touching loops are L1 and L3 = bedg
In first loop, X5 abcd
=
Vi(s) = I1(s) Z1(s) + [I1(s) – I2(s)] Z3(s) X1 1 (be + cf + dg ) + bedg
Vi(s) = I1(s) [Z1(s) + Z3(s)] – I2(s) Z3(s)
12. (b)
Vi (s) I 2 (s) Z3 (s)
= I1 (s) ...(i)
Z1 (s) + Z3 (s) Z1 (s) + Z3 (s) + P(s ) 1
R(s ) Y(s )
In second loop, s+1
–
[I2(s) – I1(s)] Z3(s) + I2(s) Z2(s) + I2(s) Z4(s) = 0
+
I2(s) (Z2(s) + Z3(s) + Z4(s)) = I1(s) × Z3(s) 1
s+1 –
I 2 (s) Z3 (s)
G2 = =
I 1 (s) Z2 (s) + Z3 (s) + Z4 (s)
Q(s )
From SFG,
I1(s) = ViG1(s) + I2(s) H(s) 1 1
Q(s) = P(s) =0
1 Z3 (s ) s+1 s+1
I1(s) = Vi (s) + I 2 (s)
Z1 (s ) + Z3 (s ) Z1 (s ) + Z3 (s ) So, P(s) = R(s) – 0 = R(s)
...[(From equation (i)] P(s ) R(s )
Y(s) = =
Z3 (s) s+1 s+1
H(s) =
Z1 (s) + Z3 (s) Y (s) 1
Therefore, =
...(Comparing above two equations) U (s) s+1
14. (a) G1 G2
R(s ) C(s )
Using Mason’s gain formula,
= 1 – [–2s–1 – 2s–2 – 4 – 4s–1]
1 1
2 2 4
= 1+ + 2 + 4+
s s s Forward paths,
P1 = G1G2, P2 = G2 1
5s 2 + 6 s + 2
= P3 = 1 1 = 1
s2
So, the transfer function is,
2 1
P1 = s = C (s)
s2 = G1G2 + G2 + 1
R(s )
1
P2 = s 1 =
s 18. (b)
1 = 1; 2=1 Transfer function,
1 1 C (s) PK
×1+ ×1 K
Y (s) PK 2 s =
=s 2
K
= R(s )
U (s) 5s + 6s + 2 G1G2 G3G4
=
s2 1 (G1G2 H 1 G2 G4 H 2 G2 G3 H 3 ) + G1G2 H1 G3G4 H 2
20. Sol.
Converting the block diagram into signal flow
The transfer function due to the disturbance
graph on,
torque Ta(s) is
GATE Previous Years Solved Paper 13
1 1 22. Sol.
×
(s ) ( Js + B) s
=
Td (s) 1 Kb KT
1+
Js + B Ra + L a s X(s ) +
–
G(s ) = 2 + Y(s )
X(s) – Y(s) +
1
( Ra + L a s )
s
=
( Ra + La s) ( Js + B) + Kb KT Y(s) = [X(s) – Y(s)] G(s) + X(s)
The steady value of response for unit impulse [1 + G(s)] Y(s) = [G(s) + 1] X(s)
input, Y (s )
=1
1 X( s )
s ( Ra + L a s )
s
(0) = lim Td 23. (b)
s 0 ( Ra + La s ) ( Js + B) + K b KT
Using block diagram reduction, we get
Ra
= 1
Ra B + Kb KT
–
Given, + 1
X(s) s+ 1/s Y(s )
s
K T = 1 N-m/A, Ra = 1 –
B = 1 N-m/rad/sec
and Kb = 1 V/rad/sec
+ s2 + 1
Substituting the given values into above X(s)
2
1/s Y(s )
s +s+1
equation, we get –
1
(0) = = 0.5 rad
2 Y (s ) s2 + 1
= H (s) = 3
21. (b) X( s ) s + 2s 2 + s + 1
G1 24. (a)
X + G2 Y
– 1 + G1 H 1
Y (s ) G + G2
= 1
X( s ) 1 + G1 H
[By using Mason’s gain formula]
G2 G1
Y (s ) 1 + G1 H 1 G2 G1
= =
X( s ) G2 G1 1 + G1G2 + G1 H 1
1+
1 + G1 H 1
Answers
EE Basics of Control Systems, Block Diagram and SFG’s
9. (b) 10. (b) 11. (c) 12. (b) 13. (d) 14. (c) 15. (d) 16. (d)
17. (c) 18. (d) 19. (a) 20. (c) 21. (b) 22. (c) 23. (a) 24. (a)
Solutions
EE Basics of Control Systems, Block Diagram and SFG’s
1. Sol. t 1
Y(s) = L te =
Number of forward paths (s + 1)2
= 4 (abdfg, ahfg, aklfg, akmg)
Y (s ) s
Number of loops = 4 (c, de, lfn, mn) T.F. = =
X(s ) (s + 1)2
2. (b)
SFG : 7. (a)
G d2 y dy du
2
+ = + 2u
dt dt dt
1 H 1
w(s ) y(s) s2Y(s) + sY(s) = sU(s) + 2U(s)
H
Y (s) s+2
= 2
G U (s) (s + s)
G + GHG + G + GHG
T.F. = 8. (c)
1 [GH GH ]
Taking (LT) on both sides,
(4 forward paths are 3)
1 1 24
2G (s2 + 6s + 5) X(s) = 12 =
= s s+2 s (s + 2)
1 GH
24
X(s) =
3. (b) s(s + 2) (s + 1) (s + 5)
Signal flow graph is used to find the transfer Response at t
function between the output and input node. Using final value theorem,
Lt x(t ) Lt sX(s)
4. (a) t = s 0
C (s) 2(s 1) s × 24
= = Lt
1 /s (s + 2) (s + 1) s 0 s(s + 1) (s + 2) (s + 5)
= 2.4
1 3 4
C(s) = + +
s s+2 s+1 9. (b)
C(t) = –1 – 3e–2t + 4e–t Natural ratio constant of the response depends
only on poles of the system,
5. (a)
Number of foward paths = 1 (G1G2G3) C (s) 1
T(s) = =
Number of loops = 2 (–G1G2H1, –G2G3H2) R(s ) s 2 + s + 1
Number of non-touching loops = 0 2 18
C (s) G1G2 G3 18 1
T.F. = = = 2
=
R(s) 1 + G1G2 H 1 + G2 G3 H 2 18s + 9s + 1 (6s + 1) (3s + 1)
1
6. (c) This is in the form
(1 + sT1 ) (1 + sT2 )
1
X(s) = L u(t ) = T1, T2 = 6 sec, 3 sec.
s
GATE Previous Years Solved Paper 15
2 / s2 1
1+
1
1+1+1
= 3 12 18 36 2 s2 + s + 1
s s
1+ + + + = =
s s s2 s2 1 s2
2 2
= 2
= 13. (d)
s + 15s + 54 (s + 9) (s + 6)
Transfer function of a system is the unit impulse
1 response of the system.
=
s s
27 1 + 1+
9 6
16 Electronics Engineering Control Systems
1 100 6 2s
Lt s =1 = R(s ) R(s ) 2
s 0 s (s + 6)2 + 82 s + 2s + 6
6 2s
14. (c) = R(s ) 1 2
s + 2s + 6
Using signal flow graph,
1 s 2 + 4s
–1 E(s) =
s s2 + 2s + 6
2
1 1 3/s s+2 1
Steady state value of error, using final value
Y(s )
theorem,
R(s)
ess = Lt sE(s)
s 0
–1
Forward path gains, 1 s 2 + 4s
= Lt s
s 0 s s2 + 2s + 6
2 2
P1 = ( 1) × =
s+2 s+2 s 2 + 4s
= Lt =0
3 2
=
6 s 0 s 2 + 2s + 6
and P2 =
s s + 1 s (s + 2)
Individual loop, 15. (d)
The block-diagram can be redrawn as,
3 2 6
L1 = 1× × =
s s + 2 s(s + 2) 2
+ +
c1 b1
Loop touches forward paths, therefore,
1 = 1 and 2 = 1
3 4
D = 1 – L1 1 + +
5 6
R(s) c1 1/s 1/s P
+ –
6 s (s + 2) + 6 1 C(s )
= 1+ =
s (s + 2) s(s + 2) b0 a0 a1
GATE Previous Years Solved Paper 17
c0 P c1 P 1 1 1
+ C(s) = R(s) H (s) = +
s s+1 s+2
s2 s
=
a a b0 P b1 P 1 1
1 + 1 + 20 2 = +
s s s s s(s + 1) s(s + 2)
C (s) c0 P + c1 Ps
= 2 1 1 1 1 1
R(s ) s + ( a0 b1 ) s + ( a0 b0 P ) C(s) = +
s s+1 2 s s+2
C (s) P(c0 + c1s )/(s 2 + a1s + a0 ) 1.5 1 0.5
= ...(i) =
R(s ) 1 (b0 + b1 s )P /(s 2 + a1s + a0 ) s s+1 s+2
18 Electronics Engineering Control Systems
1 1.5 1 0.5 h0 h1
= L P1 = 2
, P2 =
s s+1 s+2 s s
C(t) = (1.5 – e–t – 0.5e–2t) u(t) Individual loops are:
a1 a0
18. (d) L1 = , L2
s s2
100 µF Non-touching loops = zero
+ + 1 = 1
10 k a1 a s + a1
V1(s) V2(s) 2 = 1 = 1+ 1 =
s s s
100 µF
– – a1 a0 s2 + a1s + a0
= 1 =
s s2 s2
1
R+ C(s) P1 + P2
V2 (s) 1 + RCs
Cs 1 2
= = G(s) = =
V1 (s) 1 1 2 + RCs U (s)
+R+
Cs Cs
h0 h1 s + a1
×1+ ×
1 + 10 × 10 3 × 100 × 10 6 s
1+s s 2 s s
= 3 6
= =
2 + 10 × 10 × 100 × 10 s 2 + s s 2 + a1s + a0
19. (a) s2
24. (a)
Transfer function, e
K1
[1]
Y (s) LJs 2 K1
= = 2
U1 ( s) R K1K 2 LJs + RJs + K 1K 2
1 2
Ls LJs
2 Compensators and
Controllers
ELECTRO NICS EN GINEERIN G Q.5 The transfer function of a phase lead controller
KI 2
X(s) + KP + Y(s )
– s s 3 + 4s 2 + 5s + 2
[EE-1994 : 1 Mark]
j
(c) increase both rise time and overshoot.
(d) decrease rise time and increase overshoot.
[EE-1998 : 1 Mark]
(b)
(0.5s + 1)
Q.5 G(s) = maximum phase lead of the
(0.05s + 1)
compensator is
24 Electronics Engineering Control Systems
Q.6 A lead compensator used for a closed-loop Statement for Linked Answer Questions (9 and 10):
controller has the following transfer function, The transfer function of a compensator is given as,
s+a
Gc (s ) =
s s+b
K 1+
a
. For such a lead compensator Q.9 Gc(s) is a lead compensator if
s
1+
b (a) a = 1, b = 2 (b) a = 3, b = 2
(c) a = –3, b = –1 (d) a = 3, b = 1
(a) a < b (b) b < a [EE-2012 : 2 Marks]
(c) a > Kb (d) a < Kb
Q.10 The phase of the above lead compensator is
[EE-2003 : 1 Mark]
maximum at
900 (a) 2 rad/sec. (b) 3 rad/sec.
Q.7 The system is to be such that its
s (s + 1) (s + 9) 1
(c) 6 rad/sec. (d) rad/sec.
gain crossover frequency becomes same as its 3
uncompensated phase crossover frequency and [EE-2012 : 2 Marks]
provides a 45° phase margin. To achieve this,
one may use Q.11 For the network shown in the figure below, the
(a) a lag compensator that provides an frequency (in rad/sec) at which the maximum
attenuation of 20 dB and a phase lag of 45° phase lag occurs is ________ .
Answers
EC Compensators and Controllers
9. (b) 10. (c) 11. (b) 12. (d) 13. (d) 14. (a) 15. (a) 16. (c)
17. (0.5) 18. (a) 19. (a) 20. (d) 21. (3.125)
T =T 8. (d)
3T = T Maximum phase shift,
1 m = Ge(s)
=
3 = tan–1 3 T – tan–1 t
For maximum phase shift,
1 1 1 1 1/3
= sin = sin d
max 1+ 1 + 1/3 =0
d
1 2 /3 1 3T T
max = sin = sin 1 = 30° =
4 /3 2 1 + (3T ) 2
1 + (T )2
3[1 + (T )2] = 1 + (3T )2
6. (c)
3 + 3T2 2 = 1 + 9T2 2
• A PD controller does not effect the type of 2 = 6( T)2
the system. 1
( T)2 =
• It reduces the overshoot and increases the 3
damping. 1
T=
• It increases the bandwidth therefore SNR 3
decreases. 1 1 1 1
max = tan 3× tan
• System become more prone to noise. 3 3
7. (a) = =
3 6 6
(–2.5, 4.33j)
9. (b)
K v = lim sG(s) H (s )
5 s 0
(K P + KD s )100
60° 1000 = lim s ×
s 0 s (s + 10)
= 0.5 K P = 100
cos–1 0.5 = 60° Now characteristic equation (1 + G(s) H(s)) = 0
= 60°
(K P + KD s )100
1+ =0
K s (s + 10)
G(s) =
s 2 s = 2.5 + 4.33 j Putting, K P = 100
s2 + 10s + 104 + 100KDs = 0
1 4.33
= 2 tan ; 120° s2 + (10 + 100KD) s + 104 = 0
2.5
Comparing with standard second order
For compensated system =180 – 120; 60°
equation.
(b) and (d) are lag network and for
compensating lag network K/s2, a lead network i.e., s2 + 2 n + 2
n =0
is required.
So, = n 100
Putting, s = –2.5 + 4.33j in (a) gives, 2 n= 10 + 100KD
K (s + 3) 0.5 + j 4.33 Given, = 0.5
2 = = 53°; 60°
s (s + 9.9) 7.4 + j 4.33 2 × 0.5 × 100 = 10 + 100KD
Option (a) is the correct answer. KD = 0.9
GATE Previous Years Solved Paper 27
CE
1 + G(S ) = 0
CE
1+s S 4 + 4S 3 + 5S 2 + S(2 + 2 K P ) + 2 K I = 0
T.F. = ...(ii)
1+ s From necessary condition KP > –1, KI > 0
where, = lead time constant = R1C
R2 S4 1 5 2K I
and = S 3
4 2 + 2K P
R1 + R2
Comparing equation (i) and (ii), we get [20 (2 + 2K P )]
S2 2K I
4
1 1 [(18 2 K P ) (2 + 2 K P )]
=
and = S1 8K I
2 4 (18 2 K P )
1
or, = S0 2K I
2
RC time constant = 0.5
GATE Previous Years Solved Paper 29
20 2 2 K P 36 + 32 K P 4K 22
For stability, >0 KP < 9 0 < KI <
4 32
–1 < KP < 9
For stability: dK I
To get maximum value of K I =0
dK P
(18 2K P ) (2 + 2 K P )
8K I > 0 dK I
4 = 0 = [0 + 32 – 8KP] = 0
dK P
(18 – 2KP) [2 + 2KP] – 32KI > 0
KP = 4
36 + 36K P 4K P 4K P2 32 K I > 0
36 + 32(4) 4(4)2
For KP = 4, KI =
(36 + 36K P 4K P2 ) > 32 K I 32
= 3.125
36 + 32 K P 4K22 KImax = 3.125
KI <
32
Answers
EE Compensators and Controllers
Solutions
EE Compensators and Controllers
1. (b) 5. (d)
T ( j ) com = 1 or 0 dB.
( pc )1 ( 2
( + gc )
pc )1 20 log 1 + =0
1 9 2
+90° = tan 2 g
( pc )1
1 2
9 3
X + 40 20 log 3 20 log 1 + 32 20 log 1 +
2 9
( pc )1
1 =0 =0
9 X = –20 dB
( pc)1 = 3 rad/sec. So, the compensator provides an attenuation of
Gain cross frequency of compensated system, 20 dB. Hence option (d) is correct.
( gc ) 2 = phase cross frequency of
uncompensated system, ( pc)1. 8. (a)
( gc)2 = ( gc)1 = 3 rad/sec. 10( s + 1)
C1 =
(s + 10)
GATE Previous Years Solved Paper 31
ELECTRO NICS EN GINEERIN G If the input to the system is a unit ramp, the
steady-state error will be
(GATE Previous Years Solved Papers)
(a) 0 (b) 0.5
Q.1 The unity feedback system shown in figure has (c) 2 (d) Infinity
[EC-1991 : 2 Marks]
K
R(s ) + C(s ) Q.5 The poles of a continuous time oscillator are
– s (s + 10)
________ .
[EC-1994 : 1 Mark]
s+4
function is
2
s + 7 s + 13
Amplitude
4 (b) 0.5
4
(a) (b)
13 9
(c) 4 (d) 13
[EC-2001 : 2 Marks] 0
0 2 4 6
Time (sec.)
Q.20 Consider a system with the transfer function,
s+6
G( s ) =
Ks 2 + s + 6 2
Step response
Amplitude
2
(a) (b) 3 1
6 (c)
1 0.5
(c) (d) 6
6
[EC-2002 : 1 Mark] 0
0 5 10 15 20 25
100
G(s) =
(s + 1) (s + 100) Step response
1
For a unit step input to the system the
approximate sesttling time for 2% criterion is
Amplitude
Q.24 A system described by the following differential Q.28 The unit step response of a system starting from
rest is given by
d2 y dy c(t) = 1 – e–2t for t 0
equation 2
+3 + 2 y = x(t ) is initially at
dt dt The transfer function of the system is
rest. For input x(t) = 2u(t), the output y(t) is 1 2
(a) (b)
(a) (1 – 2e–t + e–2t) u(t) 1 + 2s 2+s
(b) (1 + 2e–t – 2e–2t) u(t)
1 2s
(c) (0.5 + e–t + 1.5e–2t) u(t) (c) (d)
2+s 1 + 2s
(d) (0.5 + 2e–t + 2e–2t) u(t)
[EC-2006 : 2 Marks]
[EC-2004 : 2 Marks]
Q.29 The unit impulse response of a system is
Q.25 Despite the presence of negative feedback,
h(t) = e–t, t 0
control systems still have problems of instability
because the For this system, the steady-state value of the
output for unit step input is equal to
(a) components used have non-linearities
(b) dynamic equations of the systems are not (a) –1 (b) 0
known exactly. (c) 1 (d)
(c) mathematical analysis involves [EC-2006 : 2 Marks]
approximations.
Q.30 The transfer function of a plant is
(d) system has large negative phase angle at
high frequencies. 5
T (s) =
[EC-2005 : 1 Mark] ( s + 5) ( s 2 + s + 1)
j Group-I
25 36
P= 2 ; Q= 2
s + 25 s + 20s + 36
36 36
(b) R= 2 ; S= 2
s + 12 s + 36 s + 7 s + 49
Group-II
y(t )
1
j 1.
(c) y(t)
1
2.
t
j
y(t )
3. 1
(d)
t
y(t )
1
[EC-2008 : 1 Mark]
4.
Q.32 A linear, time-invariant, causal continuous time
t
system has a rational transfer function with
simple poles at s = –2 and s = –4 and one simple (a) P-3, Q-1, R-4, S-2
zero at s = –1. A unit step u(t) is applied at the (b) P-3, Q-2, R-4, S-1
input of the system. At steady-state, the output
(c) P-2, Q-1, R-4, S-3
has constant value of 1. The impulse response
(d) P-3, Q-4, R-1, S-2
of this system is
[EC-2008 : 2 Marks]
(a) [exp(–2t) + exp(–4t)] u(t)
(b) [–4 exp(–2t) + 12 exp(–4t) – exp(–t)] u(t) Q.34 The unit step response of an under damped
(c) [–4 exp(–2t) + 12 exp(–4t)] u(t) second order system has steady-state value of
–2. Which one of the following transfer functions
(d) [–0.5 exp(–2t) + 1.5 exp(–4t)] u(t)
has these properties?
[EC-2008 : 2 Marks]
2.24 3.82
(a) (b)
Q.33 Group-I : Lists a set of four transfer function. s 2 + 2.59s + 1.12 s 2 + 1.91 s + 1.91
Group-II : Gives a list of possible step responses 2.24 3.82
y(t). Match the step responses with the (c) 2 (d) 2
s 2.59 s + 1.12 s 1.91 s + 1.91
corresponding transfer function:
[EC-2009 : 2 Marks]
GATE Previous Years Solved Paper 37
y(t)
(a) 1 (b) 5
(c)
(c) 10 (d) 100
[EC-2013 : 2 Marks]
t
Q.38 The natural frequency of an undamped second
y(t) order system is 40 rad/s. If the system is damped
with a damping ratio 0.3, the damped natural
(d) frequency (in radians), is _______ .
[EC-2014 : 1 Mark]
t
Q.39 The steady-state error of the system shown in
[EC-2011 : 1 Mark] the figure for a unit step input is ______ .
Q.36 A system described by a linear, constant R(s ) E(s) C(s )
1
coefficient, ordinary, first order differential + K=4
r (t ) – e(t) s+2 c(t)
equation has an exact solution given by y(t) for
t > 0, when the forcing function is x(t) and the
2
initial condition is y(0). If one wishes to modify
s+4
the system so that the solution becomes –2y(t)
for t > 0, we need to [EC-2014 : 2 Marks]
(a) change the initial condtion to –y(0) and the
Q.40 For the second order closed-loop system shown
forcing function to 2x(t).
in the figure, the natural frequency (in rad/sec),
(b) change the initial condtion to 2y(0) and the
is
forcing function to –x(t).
38 Electronics Engineering Control Systems
r G(s ) y 1
+
–
K where, G(s) =
s ( s + 1)
s+1
and C(s) = K
s+3
The required value of gain K to achieve this is
If the steady-state error for a unit ramp input is
______ .
0.1, then the value of K is ______ .
[EC-2016 : 2 Marks]
[EC-2020 : 2 Marks]
Q.48 The open-loop transfer function,
Q.51 Two linear time invariant systems with transfer
( s + 1) function:
G( s ) = p
s (s + 2) (s + 3)
10 10
G1 ( s ) = and G2 (s ) =
where, p is an integer, is connected in unity 2
s +s+1 2
s + s 10 + 10
feedback configuration as shown in the figure.
have unit step responses y 1 (t) and y 2 (t),
+ G(s ) y respectively. Which of the following statements
–
is/are true?
(a) y1(t) and y2(t) have the same percentage
Given that the steady-state error is zero for unit peak overshoot.
step input and is 6 for unit ramp input, the value (b) y1(t) and y2(t) have the same steady-state
of the parameter p is ______ . value.
[EC-2017 : 1 Mark] (c) y 1(t) and y 2(t) have the same damped
frequency of oscillation.
Q.49 Consider a causal second-order system with the
(d) y1(t) and y2(t) have the same 2% settling
transfer function,
time.
1
G( s ) = [EC-2022]
1 + 2s + s 2
Q.52 The block diagram of a closed-loop control
1
with a unit step R(s ) = as an input. Let C(s) system is shown in the figure. R(s), Y(s), and
s
D(s) are the Laplace transforms of the time
be the corresponding output. The time taken by domain signals r(t), y(t) and d(t), respectively.
the system output c(t) to reach 94% of its steady- Let the error signal be defined as, e(t) = r(t) – y(t).
state value lim c(t ), (rounded off to two Assuming the reference input r(t) = 0 for all t,
t the steady-state error e( ), due to a unit step
decimal places), is disturbance d(t), is _______ (Rounded off to two
(a) 5.25 (b) 4.50 decimal places).
[EC-2019 : 2 Marks]
+
+ + 1
R(s) 10 Y(s )
Q.50 Consider the following closed-loop control s(s + 10)
–
system,
K
R(s ) + C(s )
– s ( s + 2)
0 0.2 t(sec)
1 + as
K
r (t ) c(t)
s+a
(a) K = 4, a = 0.35 (b) K = 8, a = 0.455
[EE-1991 : 2 Marks] (c) K = 16, a = 0.225 (d) K = 64, a = 0.9
[EE-1996 : 2 Marks]
Q.2 For what values of ‘a’ does the system shown in
figure have a zero steady-state error Q.7 A unity feedback system has open loop transfer
function G(s). The steady-state error is zero for
[i.e., Lim E(t ) ] for a step input?
t (a) step input and type 1 G(s).
(b) ramp input and type 1 G(s).
s+1
u(t ) + (c) step input and type 0 G(s).
– (s 2 + 5s + a)
(d) ramp input and type 0 G(s).
[EE-2000 : 1 Mark]
1
s+4 Q.8 A unity feedback system has open loop transfer
function,
(a) a = 0 (b) a = 2
(c) a 4 (d) for no value of ‘a’ 25
G(s) =
[EE-1992 : 1 Mark] s(s + 6)
The peak overshoot in the step-input response
Q.3 The steady-state error due to a step input for
of the system is approximately equal to
type 1 system is ______ .
(a) 5% (b) 10%
[EE-1995 : 1 Mark]
(c) 15% (d) 20%
Q.4 Consider the unit step response of a unity [EE-2000 : 2 Marks]
feedback control system whose open loop
transfer function is Q.9 The block diagram shown in figure gives a unity
feedback closed-loop control system. The
1
G(s) = steady-state error in the response of the above
s (s + 1)
system to unit step input is
The maximum overshoot is equal to
(a) 0.143 (b) 0.153 3 15
u(t) + y(t)
– s + 15 s+1
(c) 0.163 (d) 0.173
[EE-1996 : 1 Mark]
Q.5 For a feedback control system of type 2, the (a) 25% (b) 0.75%
steady-state error for a ram input is (c) 6% (d) 33%
(a) infinite (b) constant [EE-2003 : 2 Marks]
(c) zero (d) indeterminate
[EE-1996 : 1 Mark]
42 Electronics Engineering Control Systems
Q.10 The block diagram of a closed-loop control Q.13 If the above step response is to be observed on a
system is given by the figure. The value of K and non-storage CRO, then it would be best have
P such that the system has a damping ratio of the ei as a
0.7 and an undamped natural frequency n of (a) step function
5 rad/sec, are respectively equal to
(b) square wave of 50 Hz
R(s )
K
C(s )
(c) square wave of 300 Hz
+
– s ( s + 2)
(d) square wave of 2.0 kHz
[EE-2007 : 2 Marks]
1 + sP
Q.14 The transfer function of a linear time invariant
(a) 20 and 0.3 (b) 20 and 0.2 system is given as,
(c) 25 and 0.3 (d) 25 and 0.2 1
G(s ) = 2
[EE-2004 : 2 Marks] s + 3s + 2
Q.11 Consider the feedback system shown below The steady-state value of the output of the
which is subjected to a unit step input. The system for a unit impulse input applied at time
system is stable and has following parameters instant t = 1 will be
kp = 4, ki = 10, = 500 and = 0.7. The steady- (a) 0 (b) 0.5
state value of Z is (c) 1 (d) 2
[EE-2008 : 2 Marks]
Ki/s Z(s )
1
Q.15 The transfer function of a system is given as,
+ 2
+
KP 100
+ s2 + 2 s+ 2
2 .
0 – s + 20s + 100
The system is
(a) 1 (b) 0.25
(a) an overdamped system.
(c) 0.1 (d) 0
(b) an underdamped system.
[EE-2007 : 2 Marks]
(c) a critically damped system.
Statement for Common Data Questions (12 and 13): (d) an unstable system.
R-L-C circuit shown in figure.
[EE-2008 : 2 Marks]
R = 10 L=1m
Q.16 The unit step response of a unity feedback
system with open-loop transfer function,
ei e0 C = 10 µF K
G(s) = is shown in the figure. The
(s + 1) (s + 2)
value of K is
Q.12 For a step input ei, the overshoot in the output eo 1
will be 0.75
Response
(b) 1
10
t
t 0 5
1s
(a) 0 (b) 0.1 y
(c) 1 (d) 10 2
[EE-2011 : 1 Mark] 1
(c)
Q.19 A two loop position control system in shown 0 t
5
below.
–0.75
Motor
1
R(s) + + Y(s ) y
– – s (s + 1)
1
ks
(d) 0 t
5
Tacho-generator
Answers
EC Time Response Analysis
9. (b) 10. (a) 11. (a) 12. (a) 13. (b) 14. (a) 15. (b) 16. (b)
17. (d) 18. (c) 19. (b) 20. (c) 21. (b) 22. (b) 23. (c) 24. (a)
25. (d) 26. (c) 27. (a) 28. (b) 29. (c) 30. (d) 31. (c) 32. (c)
33. (d) 34. (b) 35. (a) 36. (d) 37. (c) 38. (38.16) 39. (0) 40. (c)
41. (0.37) 42. (400) 43. (d) 44. (2.8) 45. (a) 46. (1) 47. (1) 48. (1)
Solutions
EC Time Response Analysis
1. (a) 2 n =8
A A = 5 1 (0.8)2 = 3
ess = = =0
1 + Kp 1 + For 2nd peak n = 3,
n 3
2. (b) tp = = = sec.
d 3
The steady-state error of a stable ‘type 0’ unity
feedback system for a unit step function is 4. (a)
1 s 4(1 + 2 s )
. K V = lim s G(s ) H (s ) = lim
1 + Kp s 0 s 0 s 2 (s + 2)
4(1 + 2s)
= lim =
3. (a) s 0 s (s + 2)
2 = 25 A A
n ess = = =0
KV
n =5
46 Electronics Engineering Control Systems
2 13. (b)
s= n ± n +1
(b) Critically damped (5), multiple poles on Number of poles at origin of open-loop transfer
the negative real axis, function gives the type of the system.
= 1 14. (a)
s= – n, – n K
(c) Oscillatory (2) poles on the imaginary K p = lim G(s) H (s) = lim =
s 0 s 0 s (s + 1)
axis,
A A
= 0 ess = = =0
1 + Kp 1 +
s = ±j n
15. (b)
7. Sol.
1
(a) - 1, (b) - 5, (c) - 4 H(s) =
s
(a) Very low response at very high frequencies
1
Low pass system. R(s) =
s+a
(b) Overshoot Damping ratio
1 1 1 1
(c) Synchro-control transformer output C(s) = R(s ) H (s ) = =
s (s + a ) a s s+a
Phase-sensitive modulation
1 at
C(t) = [1 e ]
8. (c) a
<1
16. (b)
For underdamped system, roots or poles are:
4
2 ts =
s= n±j n 1 n
2 n =4 n=2
10. (b)
4
ts = =2
2 s2 + 2s 2
f = lim sF(s ) = =2
(0 + ) s s 2 + 2s + 5
17. (d)
2
2 s + 2s
f ( ) = lim sF(s ) = 2 =0 an 1 s + an
s s + 2s + 5
sn + a1 s n 1
+ ...an 2 s 2
T(s) =
10. (a) an 1 s + an
1+ n
K p = lim G(s) H (s) s + a1 s n 1 + ...an 2 s 2
s 0
an 1 s + an
1 1 G(s) =
= lim = sn + a1 s n 1
+ ...an 2 s2
s 0 ( s + 6) ( s + 1) 6
GATE Previous Years Solved Paper 47
1 s K (s + 1)
R(s) = or, lim =1
s s 0 s(s + 2) (s + 4)
C (s) 2 K
H(s) = = or, =1
R(s ) s + 2 8
GATE Previous Years Solved Paper 49
( s) 10 K a 10 K a 41. Sol.
= =
R(s ) 1 + 10 s + 10 K a (1 + 10 K a ) + 10s According the question,
( s) 10 K a K
= G(s) H(s) = ...(i)
R(s ) 10s s(s + 1)2
(1 + 10K a ) 1 +
1 + 10K a
j
10 1
T = =
1 + 10K a 10
1 + 10Ka = 100
10Ka = 99 A jb
Ka = 9.9 10
39. Sol. B O
–1 –1/3
Given, n = 40 rad/sec.
= 0.3
2
d = n 1
= 38.16 rad/sec.
39. Sol.
After converting the system into equivalent The damping ratio is given as = 0.5.
unity feedback system. = cos–1 = 60°
Let the co-ordinates of point ‘A’ is (–a + jb)
4(s + 4)
R(s ) +
–
C(s ) OB
s (s + 2) where, cos60° = ...(ii)
OA
Also, 0 A = 0.5 (Given)
4(s + 4) BA
Similarly, sin60° = ...(iii)
OLTF = OA
s(s + 2)
BA = jb = 0.433j
Type = 1
Hence, co-ordinates of A = –0.25 + 0.43j
ess for step input = 0
The value of system gain K can be obtained
40. (c) as,
The closed-loop transfer function of the given G(s) H (s) = 1 ...(iv)
system is, From equation (i) and (iv) we get,
C (s) 4 4 s = –0.25 + j4.33
= = 2
R(s ) s (s + 4) + 4 s + 4s + 4 K = 0.37
Comparing with standard second order transfer
42. Sol.
K n2 G(s) K
function 2 , we get, T(s) = =
s + 2 n + n2 1 + G(s) H (s) s 2 + 10s + K
Comparing with standard second order transfer
2 =4
n function,
2
or, n = 4 = 2 rad/sec. n
T(s) =
s2 + 2 ns +
2
n
GATE Previous Years Solved Paper 51
2 2 = (2.3)2 (1 – 2)
we have, 2 =K
n 2
15.16 = (2.3)2
and 2 n = 10 = 0.59
Q = 0.25 (Given)
1
Also, K= = 2.8
10 2
= = 20
n
2 × 0.25
2 45. (a)
and K= n = (20)2 = 400
R(s)
E(s) =
43. (d) 1 + G(s) H (s)
The output of a second order system for unit 1 2
R(s) = , G(s) = , H(s) = 1
step input, s s (s + 1)
e nt
1/ s s+1
y(t) = 1 sin( ot ) ...(i) E(s) = = 2
1 2 2 s +s+2
1+
s (s + 1)
From given data,
2 s (s + 1)
y(t) = 1 e t
cos 3t ess = lim sE(s) = lim 2 =0
s 0 s 0 s +s+2
3 6
= n=1 46. Sol.
and = 3
d dy
L = (sY(s) – y(0))
= 2 2 dt
n + d =2
1 s 2
1 Y(s) = G(s) × =
= s s (s + 1) (s + 3)
2
Therefore, the transfer function. y(0) = lim sY (s )
s
2 (Applying initial value theorem)
n 4
T(s) = =
s2 + 2 ns +
2
n s 2 + 2s + 4 2
1
s 2 s
= lim =
44. Sol. s (s + 1) (s + 3) 1 3
s 1+ 1+
s s
K
G(s) = ; H (s) = 1 y(0) = 0
s (s + 2)
dy s × (s 2) s 2
Characteristic equation = 1 + G(s) H(s) = 0 L = sY (s) = =
dt s (s + 1) (s + 3) (s + 1) (s + 3)
K
1+ =0 dy dy
s (s + 2) = lim sL
dt t = 0 s dt
s2 + 2s + K = 0
n = K 1
2
s × (s 2) s
1 = lim = =1
2 = 2; = s (s + 1) (s + 3) 1 3
n 1+ 1+
K s s
/ 1 2
Mp = e = 0.1 47. Sol.
1
= ln (0.1) G(s) = 2
1 2 s + 2s
52 Electronics Engineering Control Systems
lim c(t ) = 1 10
t For system: G2(s) = 2
s + 10s + 10
In order to reach 94% of its steady-state value,
Characteristic equation,
(1 – e–t – te–t) = 0.94
By trial and error, we get, s2 + 2 ns +
2
n =0
t 4.50 sec. On comparing,
2
50. Sol. n = 10 n = 10
4 4 1
Settling time, ts = = G1(s) = 10, G2 (s) =
n 0.5 10 s(s + 10)
8 E(s) G2 (s)
= = 2.535 =
10 D(s) 1 + G1 (s) G2 (s)
Steady-state error, 1
s(s + 10) 1
1 = = 2
10 s 1 s + 10s + 10
s 1 + 10 ×
ess = lim =1 s(s + 10)
s 0 s 2 + 10 s + 10
ess = lim e(t ) = lim sE(s)
Since ‘ ’ value for both the system is same. So t s 0
percentage peak overshoot for both system is
s(1/ s)( 1)
same. ess = lim 2
s 0 s + 10s + 10
52. (–0.1) 1
= = 0.1
D(s )
10
R(s ) = 0 1
+– 10 ++ Y(s )
s(s + 10)
Answers
EE Time Response Analysis (Section-A)
Solutions
EE Time Response Analysis (Section-A)
1. (b) 2. (c)
Close loop T.F. = L (Impulse response) 1
T .F . =
2s + 1 Q SG
1 + GH
C.L.T.F. =
(s + 1)2
GH
O.L.T.F. STH.F. =
Q C.L.T.F. = 1 + GH
1 + O.L.T.F.
Less sensitive to ‘change in G’ then ‘change
(For unity feedback)
in H’
G(s )
i.e., C.L.T.F. = 3. (a)
1 + G(s ) H ( s ) = 1
G = 100 ± 10%
C.L.T.F.
G(s) = G
1 C.L.T.F. H ( s ) = 1 = 10% or 0.1
G
On putting the value of C.L.T.F.
9
2s + 1 H=
We get, G(s) = 100
s2
54 Electronics Engineering Control Systems
Answers
EE Time Response Analysis (Section-B)
9. (a) 10. (d) 11. (a) 12. (c) 13. (c) 14. (a) 15. (c) 16. (d)
17. (c) 18. (a) 19. (a) 20. (0.241) 21. (a) 22. (b) 23. (d) 24. (c)
Solutions
EE Time Response Analysis (Section-B)
1. Sol. 4. (c)
Q Time constant = 0.2 sec. (from figure) 1
G(s) =
s ( s + 1)
1 K Characteristic equation = 1 + G(s)
= From G(s) =
a s = s2 + s + 1
a 1+
a
On comparing with s 2 + 2 ns +
2
n
1
= 0.2 we have, = 0.5
a
a=5
1 2
Q Final value = lim sC (s) Mp = e = 0.1630
s 0
5. (c)
K 1 K
= slim0 s s + a a = a = 2 1
s
(From figure) lim sE( s ) = lim s2 =0
s 0 s 0 G ( s ) H (s)
K 1+
=2 s
a
K = 2 × 5 = 10 6. (c)
Characteristic equation:
2. (a) 1 + G(s) H(s) = 0
R(s) K
E(s) = = 1+ (1 + as) = 0
1 + G(s) H (s) s (s + 2)
lim E(t ) = lim sE(s) s2 + (Ka + 2) s + K = 0 ...(i)
t s 0
Q Characteristic equation is in the form of
s
1 s2 + 2 ns +
2
n =0
= lim s
( s + 1) 1 For = 0.7 and n = 4
s 0
1+ 2
(s + 5s + a) (s + 4) Characteristic equation will be
s2 + 5.6s + 16 = 0 ...(ii)
1 On comparing equation (i) and (ii), we get,
=0
1 K = 16 and a = 0.225
1+
4a
7. (a)
4a
=0 Steady-state error is zero for step input with
4a + 1
type-1 G(s).
Hence, a=0
8. (b)
3. Sol.
25
1 G(s) =
s s ( s + 6)
lim sE(s) = lim s =0
s 0 s 0 G (s ) H ( s) Characteristic equation,
1+
s 1 + G(s) = 0
56 Electronics Engineering Control Systems
s2 + 2 ns +
2
n =0 k=
2
n = 52 = 25
we get, n = 5 and = 0.6 (where, n = undamped natural frequency)
2 n = 2 + kP
1 2 2 × 0.7 × 5 = 2 + 25 P
Mp = e = 0.0948 10%
(where = damping ratio)
9. (a) P = 0.2
3 15 45 11. (a)
G(s) = × =
s + 15 s+1 (s + 1) (s + 15) 1
Step input R(s ) =
and H(s) = 1 s
Open loop transfer function Ki/s Z(s )
45
= G(s) H (s ) = +
(s + 1) (s + 15) +
KP
2
R(s) 2 2 C (s )
E(s ) + s +2 s+
The system is type-0. –
Steady-state error to unit step input,
1 ki 2
ess = G(s) = kp +
1 + Kp
s s2 + 2 s+ 2
1 1 C (s)
= = R(s ) 1
ess = R(s )
1 + kp 1 + 3
= 0.25 or 25% G(s ) R(s )
= R(s ) 1 =
1 + G(s) 1 + G(s)
10. (d)
ki
k R(s)
ki
G(s) = and H(s) = 1 + sP Z(s) = E(s) = s
s(s + 2) s 1 + G(s)
Closed-loop transfer function, Steady-state value of Z,
k Zss = lim sZ( s)
s 0
G(s) s ( s + 2)
T(s) = = k ki 1
1 + G(s) H (s) 1 + (1 + sP ) s
s ( s + 2) s s
= lim 2
k
s 0 ki
= 1 + kp +
s(s + 2) + k (1 + sP ) s s2 + 2 s+ 2
k ki
T(s) = = 2
=1
s 2 + (2 + kP ) s + k ki 2
GATE Previous Years Solved Paper 57
12. (c) / 1 2
Overshoot = PP = e
R = 10 L = 1 mH
× 0.5 / 1 0.5 2
= e
= 0.163 or 16.3%
ei i C = 10 µF
13. (c)
1
=
n LC
di 1
ei = Ri + L + i dt 1
dt c =
1 × 10 × 10 × 10 6
3
Taking Laplace transform,
= 104 rad/sec.
1
Ei(s) = R + Ls + I (s ) 4 4
Cs Settling time (ts) = = 4
n 10 × 0.5
Ei (s )
I(s) = = 0.8 msec.
1
R + Ls +
Cs
1
Square wave
e0 = i dt
c
1 1 Ei (s )
E0(s) = I (s) =
Cs Cs R + Ls + 1 T
Cs
T/2
Ei (s )
E0(s) = For a square wave T/2 should be greater than ts.
RCs + LCs 2 + 1
E0 (s) 1 For, f1 = 50 Hz
= T1 1
Ei (s) R2 1 = 10 ms >> ts
LC s + s + =
L LC 2 2 × 50
Characteristic equation, For, f2 = 300 Hz
R 1 T2 1
s2 +
s+ = = 1.67 ms > ts
=0 2 2 × 300
L LC
For, f3 = 2 kHz
Comparing with,
T3 1
s2 + 2 2 = = 0.25 ms < ts
ns + n 2 2 × 2 × 10 3
1 Therefore, it would be best to have ei as a square
=
LC wave of 300 Hz.
R 14. (a)
2 n =
L
r(t) = unit impulse applied at t = 1
R 1
= × = (t – 1)
L 2 n
R(s) = 1[r(t)] = e–s
R LC R C C (s) 1
= × = G(s) = =
L 2 2 L R(s) s 2 + 3s + 2
10 10 × 10 6 e s
= = 0.5 C(s) = R(s ) G(s ) =
2 1 × 10 3 s 2 + 3s + 2
58 Electronics Engineering Control Systems
s 1
se R(s) = (step-input)
= lim 2 =0 s
s 0 s + 3s + 2
2 2
C(s) = R(s ) =
15. (c) s+1 s (s + 1)
100 1 1
M(s) = 2 = 2
s + 20s + 100 s s+1
Comparing with standard form,
C(t) = L –1 [C(s)] = 2[1 – e–t]
2
n Final value of C(t) = Css = 2
M(s) =
s2 + 2 ns +
2
n 98% of Css = 0.98 × 2 = 1.96
2 = 20 Let, t = T, the response reaches 98% of its final
n
values,
n = 100
=1 1.96 = 2[1 – e–T]
T 4 sec.
n = 10
The system is critically damped.
18. (a)
16. (d) Let the system is represented as,
Steady-state value of response = 0.75 X(s ) + G(s ) Y(s )
–
Input is unit-step.
So steady-state error,
ess = 1 – 0.75 = 0.25 y( s ) G(s)
=
R(s) x(s) 1 + G(s) H (s)
Error = E(s) =
1 + G(s) H (s) H(s) = 1 (unity feedback)
k x(s)
where, G(s) = Error = E(s) =
(s + 1) (s + 2) 1 + G(s)
1 1
H(s) = 1 and R = Steady-state error for x(s ) = , e = 0.1
s s ss
Steady-state error using find value theorem, sx(s)
ess = lim sE(s) = lim
ess = lim sE(s) s 0 s 0 1 + G( s)
s 0
1
sR(s ) sx
= lim 0.1 = lim s
s 0 1 + G( s ) H ( s )
s 0 1 + G( s )
1 1
s lim
s 1 = 0.1
= lim = s 0 1 + G(s)
s 0 k k
1+ 1+ When input,
(s + 1) (s + 2) 2
1
0.25 = k 10
1+
2
k
1+ =4 k=6 t
2 1s
GATE Previous Years Solved Paper 59
22. (b)
1 Damping ratio,
G(s) = and H(s) = 1
s(s + 1 + K ) = 0.5
Characteristic equation, Undamped natural frequency,
1 + G(s) H(s) = 0 n = 10 rad/sec.
23. (d) 25
Q= 2
Ks + b s + 10s + 25
Close-loop transfer function = 2
s + as + b =
25 = 5 rad/sec.
n
Open-loop transfer function 2 × 5 = 10
Ks + b =1 (Critically damped)
= G( s ) = 2
s + as + b Ks b Observing all the options, option (c) is correct.
Ks + b Ks + b 26. Sol.
G(s) = 2
=
s + as Ks s(s + a K )
Steady-state error for type-0 and step input,
Steady-state error for ramp input given to type-1 1
system = 1/Kv. ess =
1 + kp
Where, velocity error coefficient,
1 1
Ks + b b k p = lim =
K v = lim s = s 0 (s + 1) (s + 2) 2
s 0 s (s + a K ) a K
1 2
Steady-state error, ess = = = 0.66 units
1 3
a K 1+
ess = 2
b
27. Sol.
24. (c)
Closed-loop transfer function,
For maximum peak over shoot,
K
1 2
Mp C (s) (s + 1) (s + 2)
=
R(s ) K
1+ 2
= 0.25 for option (c), which is least among all (s + 1) (s + 2)
options. Therefore correct option is (c).
C (s) K
= 2
25. (c) R(s ) (s + 1) (s + 2) + K
15 1
P= Given, R(s) =
2 s
s + 5s + 15
K
n = 15 = 3.872 rad/sec. C(s) = 2
s [(s + 1) ( s + 2) + K ]
2 × 3.872 = 5
lim sC (s ) = 0.8 (Given)
5 s 0
= = 0.64
2 × 3.872
K
(Underdamped) = 0.8 K=8
2+K
4 Stability Analysis
s 2
Q.15 For the polynomial
R(s) + K 0 C(s )
– (s + 2)2 P(s) = s5 + s4 + 2s3 + 2s2 + 3s + 15
The number of roots which lie in the right half
of the s-plane is
s–2
(a) 4 (b) 2
(a) for all K 0 (b) only if K 0 (c) 3 (d) 1
(c) only if 0 K < 1 (d) only if 0 K 2 [EC-2004 : 2 Marks]
[EC-2001 : 2 Marks]
Q.16 The positive values of ‘K’ and ‘a’ so that the
Q.11 The system shown in the figure remains stable system shown in the figure below oscillates at a
when frequency of 2 rad/sec respectively are
1 K s–1 1 K (s + 1)
R(s ) Y(s ) R(s ) + C(s )
– ( s + as 2 + 2s + 1)
3
1
(a) 1, 0.75 (b) 2, 0.75
(c) 1, 1 (d) 2, 2
(a) K < –1 (b) –1 < K < 1
[EC-2006 : 2 Marks]
(c) 1 < K < 3 (d) K < –3
[EC-2002 : 2 Marks] Common Data Questions (17 and 18):
Consider a unity gain feedback control system whose
Q.12 The characteristic polynomial of a system is
q(s) = 2s5 + s4 + 4s3 + 2s2 + 2s + 1 as + 1
open-loop transfer function is G(s ) = .
The system is s2
(a) stable (b) marginally stable
Q.17 The value of ‘a’ so that the system has a phase
(c) unstable (d) oscillatory
margin equal to /4 approximately equal to
[EC-2002 : 2 Marks]
(a) 2.40 (b) 1.40
Q.13 The gain margin for the system with open-loop (c) 0.84 (d) 0.74
[EC-2006 : 2 Marks]
2 (1 + s)
transfer function G(s) H (s ) = , is
s2 Q.18 With the value of ‘a’ set for phase margin of /4,
the value of unit impulse response of the open-
(a) (b) 0
loop system at t = 1 second is equal to
(c) 1 (d) –
(a) 3.40 (b) 2.40
[EC-2004 : 1 Mark]
(c) 1.84 (d) 1.74
Q.14 The open-loop transfer function of a unity [EC-2006 : 2 Marks]
feedback system is
Q.19 If the closed-loop transfer function of a control
K
G( s ) = s 5
s (s 2 + s + 2) (s + 3) system is given as, T (s) = .
(s + 2) (s + 3)
The range of K for which the system is stable is Then it is
21 (a) an unstable system.
(a) >K >0 (b) 13 > K > 0
4 (b) an uncontrollable system.
21 (c) a minimum phase system.
(c) <K < (d) –6 < K <
4 (d) a non-minimum phase system.
[EC-2004 : 2 Marks] [EC-2007 : 1 Mark]
GATE Previous Years Solved Paper 63
Q.20 A certain system has transfer function, The value of K which will place both the poles
s+8 of the closed-loop system at the same location,
G( s ) = 2
s + s 4 is ______.
where is a parameter. [EC-2014 : 1 Mark]
Consider the standard negative unity feedback Q.24 Consider a transfer function,
configuration as shown below.
ps2 + 3 ps 2
+ G(s ) Gp ( s ) =
– s 2 + (3 + p ) s + (2 p )
with ‘p’ a positive real parameter. The maximum
Which of the following statements is true? value of ‘p’ until which Gp remains stable is
______ .
(a) The closed-loop system is never stable for
any value of . [EC-2014 : 2 Marks]
(b) For some positive values of , the closed- Q.25 A plant tranfer function is given as,
loop system is stable, but not for all positive
KI 1
values. G(s ) = K P +
s s (s + 2)
(c) For all positive values of , the closed-loop
when the plant operates in a unity feedback
system is stable.
configuration, the condition for the stability of
(d) The closed-loop system is stable for all
the closed-loop system is
values of , both positive and negative
KI
[EC-2008 : 2 Marks] (a) K P > >0 (b) 2KI > KP > 0
2
Q.21 The number of open right half plane poles of (c) 2KI < KP (d) 2KI > KP
10 [EC-2015 : 2 Marks]
G( s ) = 5 4 3 2
is
s + 2 s + 3s + 6 s + 5s + 3 Q.26 The characteristic equation of an LTI system is
(a) 0 (b) 1 given by
(c) 2 (d) 3 F(s) = s5 + 2s4 + 3s3 + 6s2 – 4s – 8 = 0
[EC-2008 : 2 Marks] The number of roots that lie strictly in the left
Q.22 The feedback system shown below oscillates at half s-plane is _____ .
2 rad/sec when, [EC-2015 : 2 Marks]
Codes: 1
G(s ) =
(a) X-P, Y-Q, Z-R (b) X-Q, Y-P, Z-R 2
s + 3s + 2
(c) X-R, Y-Q, Z-P (d) X-P, Y-R, Z-Q where K > 0. The positive value of K for which
[EC-2016 : 1 Mark] there are exactly two poles of the unity feedback
Q.28 The transfer function of a linear time invariant system of the j -axis is equal to ______ (rounded
system is given by off to two decimal places).
3 K (s + 11)
s 1 (2K + 3) G(s ) H (s ) =
s (s + 2) (s + 8)
2
s K 4
The value of K, for which the system is
The range of K for which the system is stable is marginally stable, is ______ .
(a) –2.0 < K < 0.5 (b) 0 < K < 0.5 [EC-2020 : 1 Mark]
(c) 0 < K < (d) 0.5 < K < Q.34 The characteristic equation of a system is
[EC-2016 : 2 Marks] s3 + 3s2 + (K + 2)s + 3K = 0
Q.30 Which one of the following options correctly In the root locus plot for the given system, as K
describes the locations of the roots of the varies from 0 to , the break-away or break-in
equation s4 + s2 + 1 = 0 on the complex plane? point(s) lie within
(a) Four left half plane (LHP) roots. (a) (–2, –1) (b) (–1, 0)
(b) One right half plane (RHP) root, one LHP (c) (–3, –2) (d) (– , –3)
root and two roots on the imaginary axis. [EC-2020 : 2 Marks]
(c) Two RHP roots and two LHP roots.
Q.35 Consider an even polynomial p(s) given by:
(d) All four roots are on the imaginary axis.
p(s) = s4 + 5s2 + 4 + K
[EC-2017 : 2 Marks]
where ‘K’ is an unknown real parameter. The
Q.31 A unity feedback control system is characterized complete range of ‘K’ for which p(s) has all its
by the open-loop transfer function, roots on the imaginary axis is ______ .
2(s + 1) 9
G(s) = (a) 4 K
s3 + Ks2 + 2s + 1 4
The value of K for which the system oscillates at 9
(b) 3 K
2 rad/sec is ______ . 2
[EC-2017 : 2 Marks] 5
(c) 6 K
4
Q.32 Consider a unity feedback system, as in the
(d) –5 K 0
figure shown, with an integral compensator K/s
[EC-2022]
and open-loop transfer function,
GATE Previous Years Solved Paper 65
Q.2 The number of positive real roots of the equation Q.9 The loop gain GH of a closed-loop system is
s3 – 2s + 2 = 0, is ________ .
K
[EE-1994 : 1 Mark] given the following expression .
s (s + 2) (s + 4)
Q.3 Closed-loop stability implies that, [1 + G(s) H(s)] The value of ‘K’ for which the system just
has all the ______ in the left half of the s-plane. becomes unstable is
[EE-1995 : 1 Mark] (a) K = 6 (b) K = 8
Q.4 Determine whether the system given by the block (c) K = 48 (d) K = 96
diagram of figure is stable. [EE-2003 : 2 Marks]
(a) stable (d) two roots at s = ±j and one root in left half
(b) unstable s-plane.
(c) conditional stable [EE-2009 : 1 Mark]
(d) stable for input u1, but unstable for input u2 Q.16 An open-loop system represented by the transfer
[EE-2007 : 1 Mark] function is
Q.13 If the loop gain ‘k’ of a negative feedback system (s 1)
G(s) =
(s + 2) (s + 3)
k(s + 3)
having a loop transfer function is to be (a) stable and of the minimum phase type
(s + 8)2
(b) stable and of the non-minimum phase type
adjusted to induce a sustained oscillation then (c) unstable and of the minimum phase type
(a) the frequency of this oscillation must be (d) unstable and of the non-minimum phase
4 / 3 rad/sec. type
[EE-2011 : 1 Mark]
(b) the frequency of this oscillation must be
4 rad/sec. Q.17 The feedback system shown below oscillates at
(c) the frequency of this oscillation must be 2 rad/sec when
4 or 4 / 3 rad/sec. k(s + 1)
R(s ) +– Y(s )
s + as 2 + 2s + 1
3
(d) such a ‘k’ does not exist.
[EE-2007 : 2 Marks]
Q.14 Figures shows a feedback system where k > 0. (a) k = 2 and a = 0.75
The range of ‘k’ for which is stable will be (b) k = 3 and a = 0.75
given by (c) k = 4 and a = 0.5
k
(d) k = 2 and a = 0.5
+
s (s + 3) ( s + 10) [EE-2012 : 2 Marks]
–
Q.18 In the formation of Routh-Hurwitz array for a
polynomial, all the elements of a row have zero
(a) 0 < k < 30 (b) 0 < k < 39 values. This premature termination of the array
(c) 0 < k < 390 (d) k > 390 indicates the presence of
[EE-2008 : 2 Marks] (a) only one root in the origin
Q.15 The first two rows of Routh’s tabulation of a 3rd (b) imaginary roots
order equation are as follows: (c) only positive real roots
(d) only negative real roots
s3 2 2
[EE-2014 : 1 Mark]
s2 4 4
This means three are: Q.19 For the given system, it is desired that the system
(a) two roots at s = ±j and one root in right half be stable. The minimum value of for this
s-plane. condition is _______ .
(b) two roots at s = ±j2 and one root in left half (s + )
R(s ) +– C(s )
s-plane. s 3 + (1 + ) s 2 + ( 1) s + (1 )
Q.20 A system with the open-loop transfer function, The closed-loop system will be stable if,
K 4(K + 1)
G( s ) = (a) 0 < T <
s(s + 2) ( s 2 + 2 s + 2) K 1
is connected in a negative feedback
4(T + 2)
configuration with a feedback gain of unity. For (b) 0 < K <
T 2
the closed-loop system to be marginally stable,
the value of ‘K’ is _______ . T +2
(c) 0 < K <
[EE-2014 : 2 Marks] T 2
Q.29 Which of the following option is correct for the Q.30 Consider a negative unity feedback system with
system shown below? the forward path transfer function
R(s ) +
1 1
Y(s ) s2 + s + 1
– s+1 s2 , where ‘K’ is a positive real
s3 + 2 s2 + 2s + K
Answers
EC Stability Analysis
Solutions
EC Stability Analysis
2. (d) 4. (c)
Characteristic equation, s3 + 3s2 + 4s + A = 0
1 + GH = 0 Using R-H criteria:
(1 + sTi ) 1
1+ × ×1 = 0 s3 1 4
s s (1 + sT )
2
s 3 A
s2(1 + sT) + (1 + sTi) = 0
12 A
s3T + s2 + sTi + 1 = 0 s1 0
3
Using R-H method:
s0 A
s3 T Ti
For stable system,
s2 1 1 A>0
s1 Ti T 12 A
0 and >0
s 1 3
12 – A > 0
For stability, 1st column should be positive.
12 > A
So, Ti – T > 0
0 < A < 12
Ti > T
5. Sol.
3. (b)
(False)
s3 + 6Ks2 + (K + 2)s + 8 = 0
Using R-H criteria: ( s + Z1 ) (s + Z2 )
T.F. of G(s) =
(s + P1 ) (s + P2 )
s3 1 K+2
( s + P1 ) (s + P2 )
s 2
6K 8 T.F. of F(s) =
(s + Z1 ) (s + Z2 )
6K 2 + 12 K 8 The condition for stability is that none of the
s1 0
6K pole of G(s) should be on the right half of s-plane,
s0 8 but G(s) may have zeros in the right half of
s-plane. These zeros become pole of F(s).
For stable system, 1st column element should be
Therefore the F(s) need not be stable (False).
positive.
6K 2 + 12K 8 6. (d)
>0 Using R-H criterion:
6K
6K2 + 12K – 8 > 0
s3 1 7
3K2 + 6K – 4 > 0
s2 5 3
6 ± 36 + 48 1
K= s 6.4 0
6
s0 3
K = –2.528, +0.528
K > 0.528 There is no sign change in the first column of
K > –2.528 R-H array. So, there is no roots lie in R.H.S. of
So, K > 0.528 s-plane. So, all the 3 roots will lie in the left half
So, from given option for K = 2 system will be of s-plane.
stable.
70 Electronics Engineering Control Systems
s0 3 0 s1
K 3
> 0, >0 d 4
(s + 2 s 2 + 1) = 0
ds
K>3
4s3 + 4s = 0
10. (c) s = ±j, s = ±j
K(s 2) d 2
(s + 1) = 0
G1G2 (s + 2) 2 ds
T.F. = = 2s = 0
1 + G1G2 H K (s 2) (s 2)
1+
(s + 2)2 s=0
K (s 2) Double roots on imaginary axis so system is
= unstable.
(s + 2)2 + K (s 2)2
Characteristic equation, 13. (a)
= s2 + 4 + 4s + Ks2 – 4Ks + 4K G(s) H(s) = –180° + tan–1
(1 + K)s2 + K(4 – 4K)s + 4K + 4 = 0 For = –180° + tan–1 = –180°
Routh table is, =0
s2 (1 + K ) (4K + 4) 2
2 1+
1 G(s) H (s) = =
s K (4 4K ) 0 2
s0 4(K + 1) 1
G.M. = =0
For system to be stable,
1–K > 0 In dB G.M. =
1 > K and K 0 (Given in question)
GATE Previous Years Solved Paper 71
H(s) = 1
s 3 + as 2 + 2 s + 1 + Ks + K
K =0
1 + G(s) H(s) = 1 + 3 2 2 s 3 + as 2 + 2 s + 1
s(s + 3s + s + 3s + 2s + 6)
s3 + as2 + (2 + K)s + K + 1 = 0
4 3 2
s + 4s + 5s + 6 s + K
= s3 1 2+K
s(s 3 + 4s 2 + 5s + 6)
s2 a K +1
1 + G(s) H(s) = 0
s + 4s3 + 5s2 + 6s + K = 0
4 a (2 + K ) (K + 1)
s
a
s4 1 5 K For oscillation,
3 a (2 + K ) ( K + 1)
s 4 6
=0
7 a
s2 K
2 K +1
7 a=
× 6 4K K+2
s 2 0 as2 + K + 1 = 0
7 /2 s=j ; s2 = – 2 = –4
s0 K –4a + K + 1 = 0
For system to be stable, K > 0 K+1
a=
4
2
(21 4K ) >0 K+1 K +1
7 = K=2
4 K+2
21 21
> K K< a = 0.75
4 4
21 17. (c)
> K>0
4
P.M. =
15. (b) 4
P(s) = s5 + s4 + 2s3 + 2s2 + 3s + 15 180 + tan–1 a – 180° =
4
s5 1 2 3
tan
=a a =1
s4 1 2 15 4
Now for gain crossover frequency,
s3 0( ) 12 0
2 +12 G(s) = 1
s2 15 0
12 (2 +12)
15
1 + a2 2
2 =1
s1
2 +12
2
1+1 = (as a = 1)
0 2
s 15 = 2
= (2)1/4
• Coefficient of s2 tend to + .
1
• Coefficient of s1 tend to –12. a= 1/4
= 0.84
2
Two sign change from s2 to s and s to s0.
Two roots on RHS of s-plane.
72 Electronics Engineering Control Systems
1 1 + 0.84 s 1 1 0.84 s3 1 (2 + K )
c(t) = L 2
=L 2
+
s s s 2
s a (1 + K )
c(t) = [t + 0.84] U(t)
a (2 + K ) (1 + K )
At t = 1, c(t) = 1 + 0.84 = 1.84 s1
a
19. (d) s0 (1 + K )
As there is a right half zero, the system is a non- For oscillation,
minimum phase system. a (2 + K ) (1 + K )
=0
20. (c) a
z2 5 5 =4 1 Re
21 3 –2 0.5
28 21
z1 15 5 = 35 /15 = 7
4 /3 4 /3 4
z0 1 1 + G(s) = 0
Since sign changes twice in Routh-array,
therefore, there are two poles on right half plane.
GATE Previous Years Solved Paper 73
24. Sol. s5 1 3 4
4
Given transfer function, s 2 6 8
s2 1 (2 p) Auxiliary equation,
A = 2s4 + 6s2 – 8 = 0
s1 (3 + p) 0
dA
s 0
(2 p) 0 = 8s3 + 12s = 0
ds
For system to be remain stable, As one time row of zero occur in Routh’s table
2–p 0 therefore a pair of imaginary pole exists, also
pmax = 1.99 number of sign change in Routh’s table is one.
Hence, two poles lie strictly in the left half of
25. (a) s-plane.
KI 1 27. (d)
G(s) = Kp +
s s (s + 2)
When all elements are positive, the system is
The closed-loop transfer function for unity stable. When any element is zero, the test breaks
feedback, down. When there is change in sign of
G(s) (K p s + K I ) coefficients the system is unstable.
= 2
1 + G(s) s (s + 2) + (K p s + K I ) 28. Sol.
Kps + KI 2s4 – 5s3 + 5s – 2 = 0
= By Routh array,
s3 + 2s2 + K p s + K I
Using Routh’s tabular form: s4 2 0 2
3
s 5 5
s3 1 Kp
s2 2 2
s2 2 KI
1
2 Kp KI s 0(2)
s1 0 0
2 s 2
0
s Kp Number of sign changes = number of roots
(zeros) in right half of s-plane = 3.
74 Electronics Engineering Control Systems
s3 1 (2K + 3) Y (s ) K
= 3
X( s ) s + 3s 2 + 2 s + K
s2 2K 4
2 The poles of this system lie on the j -axis when
4K + 6 K 4
s 0 the system is marginally stable,
2K
kmar = 3 × 2 = 6
s0 4
For stability, K > 0 ...(i) 33. Sol.
4K2 + 6K – 4 > 0 Characteristic equation q(s) for the given open-
2K2 + 3K – 2 > 0 loop system will be
(2K – 1) (K + 2) > 0 q(s) = s3 + 10s2 + 16s + Ks + 11K = 0
1 Using R-H criteria:
K= or K < –2 ...(ii)
2
s3 1 16 + K
Hence, 0.5 < K <
2
s 10 11 K
30. (c) 10 (16 + K ) 11 K
s1 0
q(s) = s4 + s2 + 1 = 0 10
s0 11 K 0
s4 1 1 1
For system to be marginally stabled,
s3 4 2 0
10(16 + K ) 11 K
s2 0.5 1 0 dA(s ) =0
= 4s 3 + 2 s1 10
ds
s1 6 0 0 160 + 10K – 11K = 0
s 0
1 0 0 K = 160
There are two sign changes in the first column 34. (b)
of the R-H table and the order of auxiliary Q(s) = 1 + G(s) H(s) = 0
equation is 4. So, 4-poles are symmetric about s3 + 3s2 + 2s + Ks + 3K = 0
origin.
s 3 + 3s 2 + 2s
2 RHP roots and 2 LHP roots. –K =
s+3
j
dK ( s + 3) (3s 2 + 6s + 2) ( s 3 + 3s 2 + 2 s )
= =0
ds (s + 3)2
0 3s3 + 6s2 + 2s + 9s2 + 18s + 6 – s3 – 3s2 – 2s = 0
2s3 + 12s2 + 18s + 6 = 0
31. Sol. s = –0.46, –3.87, –1.65
The given open-loop transfer function is, Img
2(s + 1)
G(s) =
s + Ks 2 + 2s + 1
3
s4 1 5 (4 + K )
s3 4 10 0
10 5
s2 (4 + K )
4 2
25 4(4 + K )
s1
5 /2
s0 4+K
Answers
EE Stability Analysis
6. (d) 7. (c) 8. (d) 9. (c) 10. (b) 11. (c) 12. (d) 13. (b)
14. (c) 15. (d) 16. (b) 17. (a) 18. (b) 19. (0.618) 20. (5) 21. (d)
22. (d) 23. (2) 24. (c) 25. (d) 26. (a) 27. (a) 28. (c) 29. (b)
30. (a)
Solutions
EE Stability Analysis
1. Sol. 3. Sol.
All the close-loop poles must lie in left half of Because zeros of the 1 + G(s) H(s) represents
the s-plane. closed-loop transfer function poles which must
lie in the left half of the s-plane.
2. Sol.
Q s3 – 2s + 2 = 0
s = –1.77, 0.88 ± j0.59
Hence, no positive real root exists.
76 Electronics Engineering Control Systems
4. Sol. 7. (c)
SFG : 2s4 + s3 + 3s2 + 5s + 7 = 0
–1 s4 2 3 7
1 1 1
s3 1 5 0
(s + 1) (s 4) (s + 3) 2
R(s )
4 3 1
C(s )
s 7 7
s1 6
–8 0
s 7
–4
Q Two sign changes in first column.
1 1 1
s+1
× 4×
s 4
× 3×
s+3
× [1] Two poles in the right half of s-plane.
T.F. = 16 8 3 16 8
1 + ×
s 4 s + 3 ( s + 3) ( s 4) s 4 s+3 8. (d)
12 45
1+
T.F. =
s 3 + 24s 2 + 158s + 135 (s + 15) (s + 1) = 0
s2 + 16s + 60 = 0
s3 1 158
(s + 10) (s + 6) = 0
s2 24 135 Roots are (–6, –10)
s1 +ve
9. (c)
0
s +ve
Characteristic equation = 1 + GH = 0
Q No sign change in first column K
1+ =0
System is stable. s (s + 2) (s + 4)
14. (c) s3 2 2
k s2 4 4
G(s) =
s (s + 3) (s + 10) s 1
8
and H(s) = 1 s0 4
Characteristic equation,
There is no root in RHS of s-plane.
1 + G(s) H(s) = 0
Two roots of s = ±j, so one root in LHS of s-plane.
k
1+
s (s + 3) (s + 10) = 0 16. (b)
s(s + 3) (s + 10) + k = 0 s 1
1+ =0
s3 + 13s2 + 30s + k = 0 (s + 2) (s + 3)
Routh-array s2 + 6s + 5 = 0
s3 1 30 s2 1 5
s2 13 k s1 6 0
13 × 30 k 0
s 5 0
s1
13 There is not root in RHS of s-plane.
s0 k
17. (a)
According to Routh-Hurwitz criterion.
The characteristic equation,
For a stable system, signs of first column do not
1 + G(s) H(s) = 0
chane,
s + as2 + (k + 2) s + (k + 1) = 0
3
k>0
Routh array for above equation,
13 × 30 k
and
13
>0 s3 1 ( k + 2)
2
Therefore sytem to be stable 0 < k < 390. s a ( k + 1)
a ( k + 2) ( k + 1)
15. (d) s1 0
a
Routh-array: s0 ( k + 1) 0
3
s 2 2 as2 + (k + 1) = 0
2 For s = j and =2
s 4 4
2× 4 4×2 –a 2 + (k + 1) = 0
s1 =0
4 k = 4a – 1
The third row vanishes. k+1
and a=
An auxiliary equation is formed using elements k+2
of 2nd row. a = 0.75 and k = 2
Auxiliary equation, A(s) = 4s2 + 4 = 0 s = ± j.
GATE Previous Years Solved Paper 79
s+ s4 1 6 K
or, 1 + =0 3
s 3 + (1 + ) s 2 + ( 1) s + (1 ) s 4 4 0
2
or, s3 + (1 + ) s2 + ( – 1) s + (1 – ) + s + =0 s 5 K 0
or, s3 + (1 + ) s2 + s + 1 = 0 20 4 K
s1 0 0
Routh’s array is, 5
s0 K 0 0
3
s 1
s2 (1 + ) 1 For stability of the system, K > 0 and
2
+ 1 20 4 K
s1 0 > 0 or K < 5
1+ 5
or, K2 + 2K – 3 < 0
s13 + 2.5 s12 + 0.5s1 1 = 0
or, (K + 3) (K – 1) > 0
s13 1 0.5 Here, the valid answer will be out of all the
options given.
s12 2.5 1
i.e., K>1
s1 0.9 0
s10 1 26. (a)
As there is one sign change hence, two roots of From the given equation,
s3 + 3s2 + 2s + K = 0
given polynomial will lie to the left of s = –1.
Using Routh’s criterion, we get
24. (c) K < 6 and K > 0 or 0 < K < 6
Open-loop transfer function:
27. (a)
K (s + 1)
G(s) = ; K > 0 and T > 0 Characteristic equation,
s(1 + Ts) (1 + 2 s)
s7 + s6 + 7s5 + 14s4 + 31s3 + 73s2 + 25s + 200 = 0
For closed-loop system stability, characteristic
s7 1 7 31 25
equation is,
6
1 + G(s) H(s) = 0 s 1 14 73 200
5
K (s + 1) s 7 42 175 0
1+ 1 =0
s(1 + Ts ) (1 + 2s) s4 8 48 200 0
s(1 + Ts) (1 + 2s) + K(s + 1) = 0 3
s 32 96 0 0
2
2Ts3 + (2 + T ) s 2 + (1 + K ) s + K = 0 s 24 200 0 0
1
s 170 0 0 0
Using Routh’s criteria,
s0 200 0 0 0
s3 2T (1 + K )
Auxiliary equation,
s2 (2 + T ) K
A(s) = 8s4 + 48s2 + 200
(2 + T ) (1 + K ) 2TK
s1 0 d
(2 + T ) A(s ) = 32s3 + 96s
ds
s0 K Total number of poles = 7
For stability, K > 0 and (2 + T) (1 + K) – 2TK > 0 Two sign change above auxiliary equation =
K(2 + T – 2T) + (2 + T) > 0 two-poles in RHS.
or, –(T – 2) K + 2(2 +T) > 0 Two sign changes below auxiliary equation
(2 + T ) implies out of 4 symmetric roots about origin
T +2
–K > or K < two-poles are in LHS and two-poles are in RHS.
(T 2) (T 2)
Three poles in LHS and 4 poles in RHS.
Hence for stability,
T +2 28. (c)
0 < K<
T 2 Routh array is,
25. (d) s4 1 3 K
Characteristic equation is, s 3
3 1
s3 + Ks2 + (K + 2)s + 3 = 0 2
s 8 /3 K
For this system to be stable, using Routh’s
8
criterion, we can write, 3K
1 3
3 < K(K + 2) s
8 /3
s0 K
GATE Previous Years Solved Paper 81
Im
Fig. (a)
(c) Re
–3 –1
–1.05
Re
–2 –0.1
Fig. (b) Im
K
(a)
1 + (0.5s + 1) (10 s + 1)
–3
K (d) Re
(b) –1
(s + 2) (s + 0.1)
K
(c)
1 + K (0.5s + 1) (10s + 1)
K [EC-1989 : 2 Marks]
(d)
K + 0.2(0.5s + 1) (10s + 1)
Q.3 The transfer function of a closed-loop system is
[EC-1988 : 2 Marks]
K
T (s) = 2
Q.2 The OLTF of a feedback system is, s + (3 K ) (s + 1)
K (s + 1) (s + 3) where K is the forward path gain. The root locus
G(s) H (s) =
s 2 + 4s + 8 plot of the system is
The root locus for the same is j
Im
(a)
(a)
Re
–3 –1
GATE Previous Years Solved Paper 83
K=3 (a)
K=
j
(c)
K=0 K=0
K=
(b)
j
(d)
(c)
[EC-1990 : 2 Marks]
(a) s1 is on the root locus, but not s2. intersection of the asymptoes of the root loci
(b) s2 is on the root locus, but not s1. with the real axis is
(c) both s1 and s2 are on the root locus. (a) –4 (b) 1.33
(d) neither s1 nor s2 is on the root locus. (c) –1.33 (d) 4
[EC-1999 : 2 Marks] [EC-2004 : 1 Mark]
Q.8 The root-locus diagram for a closed-loop Q.12 An unity feedback system is given as,
feedback system shown in the figure. The system K (1 s )
G(s ) =
is overdamped. s (s + 3)
j Indicate the correct root locus diagram,
j
K=5
K= K=0 K=0
K –3 –2 –1
K=1 (a)
(a) only if 0 K 1
(b) only if 1 < K < 5
(c) only if K > 5
j
(d) if 0 K < 1 or K > 5
[EC-2001 : 1 Mark]
–3 –2 –1 0
(d)
Im(s)
1
+ K G(s)
–
Re(s)
86 Electronics Engineering Control Systems
Q.18 The open-loop transfer function of a unity For the closed-loop system shown, the root-locus
feedback configuration is given as, for 0 < K < intersects the imaginary axis for
K = 1.5. The closed-loop system is stable for
K (s + 4)
G( s ) = (a) K > 1.5
( s + 8) (s 2 9)
(b) 1 < K < 1.5
The value of gain K (> 0) for which –1 + j2 lies
(c) 0 < K < 1.5
on the root locus is ______ .
(d) no positive value of K
[EC-2015 : 2 Marks]
[EC-2017 : 2 Marks]
Q.19 For the sysetm shown in figure, s = –2.75 lies on
Q.23 The root-locus plot of a closed-loop system with
the root locus if K is ______ .
unity negative feedback and transfer function
s+3 KG(s) in the forward path is shown in the figure.
+ K Y(s )
– s+2
Note that, K is varied from 0 to . Select the
transfer function G(s) that results in the root-
10 locus plot of the closed-loop system as shown
in the figure.
[EC-2015 : 2 Marks]
Im (s)
[EC-2016 : 2 Marks]
1.0
GATE Previous Years Solved Paper 87
ELECTRICAL EN GINEERIN G
(a)
(GATE Previous Years Solved Papers)
K(s + a)
transfer function of the form KG(s ) = ;
s2 (s + b )
b > a which of the loci shown in figure can be
valid root-loci for the system?
(b)
j
(a)
–b –a 0
(c)
j
(b) 0
–b –a
(d)
[EE-1992 : 1 Mark]
–a
(c)
0
–b Q.3 In case of an armature controlled separately
excited dc motor drive with closed-loop speed
control, an inner current loop is useful because it
(a) limits the speed of the motor to a safe value.
j
(b) helps in improving the drive energy
efficiency.
(c) limits the peak current of the motor to be
(d)
–b –a 0 permissible value.
(d) reduces the steady-state speed error.
[EE-2001 : 1 Mark]
[EE-1991 : 1 Mark]
88 Electronics Engineering Control Systems
will be 3
j Re
–3 –2 –1 1 2 3
3
(a) 2 3
K K
(a) 3 (b) 2
s s (s + 1)
j K
K
(c) 2
(d) 2
s(s + 1) s(s 1)
[EE-2005 : 1 Mark]
(b)
Q.6 A closed-loop system has the characteristic
function (s2 – 4) (s + 1) + K(s – 1) = 0. Its root
locus plot against ‘K’ is
j
j
(a)
–2 –1 +1 +2
(c)
(b)
–2 –1 +1 +2
(d)
[EE-2002 : 2 Marks]
(c)
–2 –1 +1 +2
Q.5 Figure shows the root locus plot (location of
poles not given) of a third order system whose
open-loop transfer function is
GATE Previous Years Solved Paper 89
Answers
EC Root Locus
9. (b) 10. (d) 11. (c) 12. (c) 13. (d) 14. (*) 15. (b) 16. (b)
17. (12) 18. (25.54) 19. (0.3) 20. (1.25) 21. (–3.41) 22. (a) 23. (a)
Solutions
EC Root Locus
1. (d) 4. (b)
1 K (s + 1)
G(s) = O.L.T.F. = G(s) H (s) = 3
(s + 0.1) (s + 2) s + 5s 2 + 6s
K K (s + 1)
K G(s ) (s + 0.1) ( s + 2) =
T.F. = = s(s 2 + 5s + 6)
1 + KG( s) K
1+
(s + 0.1) (s + 2) K (s + 1)
G(s) H(s) =
K s(s + 2) (s + 3)
T.F. =
(s + 0.1) (s + 2) + K Poles: 0, –2, –3
K Zeros: –1
T.F. =
K + 0.2 (1 + 10 s) (1 + 0.5 s) ( 2 3) ( 1)
Centroid =
3 1
2. (a)
5+1
(b) and (d) options are wrong, because root locus = = 2 = ( 2, 0)
2
is symmetrical about real axis.
Option (c) is wrong because root locus directions
are from pole to zeros.
GATE Previous Years Solved Paper 91
s1 = –3 + 4j 10 ± 100 72
s=
K K 6
G(s) H(s) = 4
= 10 ± 5.3
( 3 + 4 j + 1) ( 2 + 4 j )4 = = 0.784, 2.55
6
G(s) H(s) = –4[ – tan–1 2]
= –466° odd multiple of Img
1
G(s) H(s) = 4[tan 1] = 4 × =
4
Odd multiple of
s2 lies on root locus. 2 3 5
Centroid = = = 1.66
3 3
8. (d)
For overdamping roots of characteristic Angle of asymptotes = (2K + 1)
P Z
equation should lie on negative axis and be
unequal. = (2K + 1)
3
9. (b) 5
, ,
3 3
Img
Break-away point is (–0.784, 0) as –2.55 does
not lie on RL.
11. (c)
Re
–3 –1 0
P Z
Centroid =
P Z
RL lies where number of poles and zeros to the
1 3
right of the pole is odd. = = 1.33
3
s = –1.5 does not lie on RL
92 Electronics Engineering Control Systems
12. (c) K
Put, = 0 we have
1 + G(s) H(s) = 0 s
(s2 – 2s + 2) (s + 1) – (s2 + 2s + 2) (s – 1) = 0
s 2 + 3s
K= 2s2 – 4s2 + 4 = 0
1 s
2s2 = +4
For break-away and break in point,
s= ± 2
dK
= (1 – s) (2s + 3) + s2 + 3s = 0 Angle of departure is
ds
= –s2 + 2s + 3 = 0 D =
2 where, = Z–
s – 2s – 3 = 0 P
= 225°
(s – 3) (s + 1) = 0
s = 3, –1 D = ±225°
No option is matching.
–1 is the break-away point and 3 is the break-in
point. 15. (b)
K j
1+ 2 =0
s(s + 7 s + 12)
s(s2 + 7s + 12) + K = 0
Putting, s = –1 + j
–7 –4 –2 –1
(–1 + j) (1 – 2j – 1 – 7 + 7j + 12) + K = 0
K = +10
14. ( )
Since the root locus always emerges from the
+ K G (s ) break-away points i.e. when two poles are at a
–
part of same root locus lie. So, = –1 and –2 will
surely be poles. Also we know that locus
emerges from poles and terminates at zero.
Im(s) So, s = –4 is a zero and s = –7 is a pole.
(s + 4)
T(s) =
Re(s) (s + 1) (s + 2) (s + 7)
17. Sol.
K
G(s) =
1 + G(s) H(s) = 0 s (s + 1) (s + 3)
K (s 2 + 2 s + 2) The characteristic equation
1+ =0
2
s + 2s + 2 = 1 + G(s) H(s) = 0
= s(s + 1) (s + 3) + K = 0
s 2 + 2s + 2
K= = s3 + 4s2 + 3s + K = 0
s2 2s + 2
GATE Previous Years Solved Paper 93
–j
0 –1 –2
2
dK (2s + 2) (s + 2) (s + 2s + 2)
=
ds (s + 2)2
dK
For break-away points, =0
ds System is stable for K > 1.5.
(2s + 2) (s + 2) – (s2 + 2s + 2) = 0
2s2 + 6s + 4 – s2 – 2s – 2 = 0 23. (a)
s2 + 4s + 2 = 0 There are 5 root-locus branches from the same
point, so there are 5 real multiple poles.
4 ± 16 8
s= So, correct option is (a).
2
4±2 2
= = 2± 2
2
s = –0.58, s = –3.41
But, s = –3.41 lies on root locus
Hence, s = –3.41
GATE Previous Years Solved Paper 95
Answers
EE Root Locus
Solutions
EE Root Locus
3. (c) 6. (b)
Closed-loop system limits the peak value. Characteristic function:
(s2 – 4) (s + 1) + K(s – 1) = 0
4. (b)
K (s 1)
K 1+ 2 = 1 + G(s) H(s)
G(s) H(s) = (s 4) ( s + 1)
2
s
Open-loop transfer function
P–Z = 2
= G(s) H(s)
0
Centroid = =0 K (s 1)
2 = 2
Angle of asymptotes = 90°, 270° (s 4) ( s + 1)
option (a) is correct. Zero of OLTF: s = 1, z = 1
Poles of OLTF: s = –1, –2, + 2, P = 3
5. (a)
Im
k=
k= 60°
Re –2 –1 1 2
s-plane
k=
96 Electronics Engineering Control Systems
K (s + 2) s3 1 K
=
s (s + 1) (s + 2) 2K
s2 2
3
Number of zeros = Z = 1 zero at –2
2K 2K /3 2
Number of poles = P = 3 poles at 0, –1 and –3 s1 = K
2 3
Number of branches terminating at infinity 2K
=P – Z = 3 – 1 = 2 s0
3
Angle of asymptotes
As K > 0, there is no sign change in the 1 st
(2 K + 1) × 180° (2K + 1) × 180° column of Routh array. So the system is stable
= =
P Z 2 and all the three roots lie on LHS of s-plane.
= (2K + 1) × 90° = 90° and 270° For K > 0 (K 0), none of the row of Routh array
poles zeros becomes zero. So root loci does not cross the
Centroid = j -axis.
P Z
Number of zero = Z = 1
0 1 3 ( 2)
= = 1 Number of poles = P = 3
2
Number of branches terminating at infinity
= P–Z=3–1=2
GATE Previous Years Solved Paper 97
2 RL NRL RL
Re(s) = . So, all the three roots have nearly
3 –2 –1 0
we get, s = ±2
Therefore valid breakaway point is
s=2
Now gain at s = 2 is,
Product of distances from all
the poles to breakaway point The point at which root locus enters real axis
K=
Product of distance from all (breakaway point) is given by
the zeros to breakaway point dK
=0
ds
1× 2
Gain, K= =1
2 (s 2 + 2s + 5)
K=
6s
13. (b)
dK
=0 s=± 5
6Ks ds
GH(s) =
s2 + 2s + 5 5
s=
6 Frequency Response Analysis
(a) 1 2 2 Q.9 The gain margin (in dB) of a system having the
n
2
(b) (1 2
)+ 4 2
+1 loop transfer function G(s ) H (s ) = is
n s (s + 1)
100 Electronics Engineering Control Systems
Q.10 The phase margin (in degrees) of a system Q.14 The gain margin and the phase margin of a
having the loop transfer function
s
feedback system with G(s ) H (s ) = are
2 3 (s + 100)3
G( s ) H ( s ) = , is
s (s + 1) (a) 0 dB, 0° (b) ,
(c) , 0° (d) 88.5 dB,
(a) 45° (b) –30°
[EC-2003 : 2 Marks]
(c) 60° (d) 30°
[EC-1999 : 1 Mark] Q.15 In the figure, the Nyquist plot of the open-loop
transfer function G(s) H(s) of a system is shown.
Q.11 The Nyquist plot for the open-loop transfer
If G(s) H(s) has one right hand pole, the closed-
function G(s) of a unity negative feedback system loop system is
is shown in the figure, if G(s) has no pole in the
Im
right-half of s-plane, the number of roots of the
system characteristic equation in the right-half GH-plane
of s-plane is
=0 Re
(–1, 0)
Im(s)
G(s)-plane positive
(a) –6 dB (b) 0 dB
(c) 3.5 dB (d) 6 dB 3Z
20
[EC-2002 : 2 Marks]
0.1 10 100
Q.13 The phase margin of a system with the open-
loop transfer function, The transfer function of the system is
(1 s) (s + 0.1)3
G(s) H (s) = (a) 108
(1 + s) (2 + s ) (s + 10)2 ( s + 100)
GATE Previous Years Solved Paper 101
7 (s + 0.1)3 Im
(b) 10
(s + 10) (s + 100)
(s + 0.1)2 (b)
(c) 108 2 =0 =
(s + 10) (s + 100) Re
(s + 0.1)3
(d) 109
(s + 10) (s + 100)2
Im
[EC-2003 : 2 Marks]
20 log H ( j )
0 Im
–20 dB/decade
–20 (d)
= =0
Re
1 10 100
Im
(a) 1 1
(a) K < 5 and <K<
= 2 8
Re
=0 1 1
(b) K < and < K < 5
8 2
102 Electronics Engineering Control Systems
1 1
(d) K < and K < 5 x(t ) y(t )
8 s+1
[EC-2005 : 2 Marks] 1
1
(a) sin t (b) sin t +
Common Data for Questions (21 and 22): 2 4 2 4
The open-loop transfer function of a unity feedback 1 t
(c) e sin t (d) sint – cost
2s
2
3e
system is given by G(s ) = . [EC-2006 : 1 Mark]
s (s + 2)
Q.26 The frequency response of a linear, time-
Q.21 The gain and phase crossover frequencies in invariant system is given by
rad/sec are, respectively 5
H( f ) =
(a) 0.632 and 1.26 (b) 0.632 and 0.485 1 + j 10 f
(c) 0.485 and 0.632 (d) 1.26 and 0.632
The step response of the system is
[EC-2005 : 2 Marks]
(a) 5(1 – e–5t) u(t) (b) 5(1 – e–t/5) u(t)
Q.22 Based on the above results, the gain and phase 1 5t 1
(c) (1 e ) u(t ) (d)
margins of the system will be 5 (s + 5) (s + 1)
(a) –7.09 and 87.5° [EC-2007 : 2 Marks]
(b) 7.09 and 87.5°
Q.27 The asymptotic Bode plot of a transfer function
(c) 7.09 dB and –87.5°
is as shown in the figure. The transfer function
(d) –7.09 dB and –87.5°
G(s) corresponding to this Bode plot is
[EC-2005 : 2 Marks]
G( j ) (dB)
Q.23 The open-loop transfer function of a unity gain
feedback control system is given by 60
–20 dB/decade
K 40
G(s) =
(s + 1) (s + 2) –40 dB/decade
20
The gain margin of the system in dB is given by 20
0
(a) 0 (b) 1 0.1 1 10 100
(c) 20 (d)
–60 dB/decade
[EC-2006 : 1 Mark]
1 1
Q.24 The Nyquist plot of G(j ) H(j ) for a closed-loop (a) (b)
(s + 1) ( s + 20) s (s + 1) (s + 20)
control system, passed through (–1, j0) point in
the GH-plane. The gain margin of the system 100 100
(c) (d)
(in dB) is equal to s (s + 1) (s + 20) s (s + 1) (1 + 0.05s)
(a) infinite [EC-2007 : 2 Marks]
(b) greater than zero
Q.28 The magnitude of frequency response of an
(c) less than zero underdamped second order system is 5 at
(d) zero
10
[EC-2006 : 2 Marks] 0 rad/sec and peaks to at 5 2 rad/sec.
3
GATE Previous Years Solved Paper 103
parameter ‘p’ is
+
–
G(s) 2
–1 –0.5 Re (a) 3 (b)
3
–j
3
(c) 1 (d)
2
[EC-2010 : 1 Mark]
Q.29 Which of the following statement is true?
(a) G(s) is an all-pass filter. Q.33 For the transfer function G(j ) = 5 + j , the
(b) G(s) has a zero in the right-half palne. corresponding Nyquist plot for positive
(c) G(s) is the impedance of a passive network. frequency has the form
(d) G(s) is marginally stable. j
[EC-2009 : 2 Marks]
Q.30 The gain and phase margins of G(s) for closed- (a)
5
loop stability are
(a) 6 dB and 180° (b) 3 dB and 180°
(c) 6 dB and 90° (d) 3 dB and 90°
j
[EC-2009 : 2 Marks]
j5
Q.31 For the asymptotic Bode magnitude plot shown
(b)
below, the system transfer function can be
Magnitude (dB)
40 j
1/5
(c)
0
0.001 0.1 10 1000
104 Electronics Engineering Control Systems
[EC-2011 : 1 Mark]
6.02
The gain (20 log G( s) ) is 32 dB and –8 dB at 0
0.1 1 2 10 20
1 rad/sec and 10 rad/sec respectively. The –6.02
(rad/s) in log scale
phase is negative for all . Then G(s) is
39.8 39.8 If the system is connected in a unity negative
(a) (b)
s s2 feedback configuration, the steady-state error of
32 32 the closed-loop system, to a unity ramp input,
(c) (d)
s s2 is _______ .
[EC-2013 : 1 Mark] [EC-2014 : 2 Marks]
GATE Previous Years Solved Paper 105
Q.40 In a Bode magnitude plot, which one of the Q.44 The phase margin (in degrees) of the system
following slopes would be exhibited at high
10 is _______ .
frequencies by a 4th order all pole system? G(s) =
s (s + 10)
(a) –80 dB/decade (b) –40 dB/decade
(c) +40 dB/decade (d) +80 dB/decade [EC-2015 : 1 Mark]
[EC-2014 : 1 Mark]
Q.45 A closed-loop control system is stable if the
Q.41 The polar plot of the transfer function, Nyquist plot of the corresponding open-loop
10 ( s + 1) transfer function
G( s ) = for 0 <
s + 10 (a) encircles the s-plane point (–1 + j0) in the
will be in the counterclockwise direction as many times
(a) first quadrant (b) second quadrant as the number of right-half s-plane poles.
(c) third quadrant (d) fourth quadrant (b) encircles the s-plane point (0 – j1) in the
[EC-2015 : 1 Mark] clockwise direction as many times as the
number of right-half s-plane poles.
Q.42 The transer function of a mass-spring-damper
(c) encircles the s-plane point (–1 + j0) in the
system is given by
counterclockwise direction as many times
1
G(s ) = as the number of left-half s-plane poles.
2
Ms + Bs + K
(d) encircles the s-plane point (–1 + j0) in the
The frequency response data for the system are
counterclockwise direction as many times
given in the following table.
as the number of right-half s-plane zeros.
(in rad/s) G( j ) (in dB) arg (G(j )) (in deg)
[EC-2016 : 1 Mark]
0.01 –18.5 –0.2
Q.46 The number and direction of encirclements
0.1 –18.5 –1.3
around the point –1 + j0 in the complex plane
0.2 –18.4 –2.6
1 –16 –16.9 1 s
by the Nyquist plot of G(s ) = is
2 –11.4 –89.4 4 + 2s
3 –21.5 –151 (a) zero
5 –32.8 –167
(b) one, anti-clockwise
10 –45.3 –174.5
(c) one, clockwise
The unit step response of the system (d) two, clockwise
approaches a steady-state value of ______ . [EC-2016 : 1 Mark]
[EC-2015 : 2 Marks]
Q.47 In the feedback system shown below,
Q.43 Consider the Bode plot shown in figure. Assume
1
that all the poles and zeros are real valued. G(s) =
(s + 1) (s + 2) (s + 3)
r + K G(s ) y
40 dB –
–40 dB/decade
40 dB/decade
0 dB The positive value of K for which the gain
fL 300 900 fH f (Hz)
margin of the loop is exactly 0 dB and the phase
The value of fH – fL (in Hz) is _____ . margin of the loop is exactly zero degree is ___.
[EC-2015 : 1 Mark] [EC-2016 : 2 Marks]
106 Electronics Engineering Control Systems
Q.48 The asymptotic Bode phase plot of The Nyquist path and the corresponding
K Nyquist plot of G(s) are shown in the figures
G(s) =
(s + 0.1) (s + 10) (s + p1 ) below.
with K and p1 both positive, is shown below, j
+j s-plane
0.01 0.1 1 10 100
0°
(rad/s) j
–45° s = Re
R
–135° 0
–225°
–270°
–j
Q.50 The Nyquist plot of the transfer function If 0 < K < 1, then the number of poles of the
closed-loop transfer function that lie in the right-
K
G( s ) = does not encircle the half of the s-plane is
2
( s + 2 s + 2) ( s + 2)
(a) 0 (b) 1
point (–1 + j0) for K = 10 but does encircle the
(c) 2 (d) 3
point (–1 + j0) for K = 100. Then the closed-loop
[EC-2017 : 2 Marks]
system (having unity gain feedback) is
(a) stable for K = 10 and stable for K = 100. Q.52 The Nyquist stability criterion and the Routh
(b) stable for K = 10 and unstable for K = 100. criterion both are powerful analysis tools for
(c) unstable for K = 10 and stable for K = 100. determining the stability of feedback controllers.
Identify which of the following statements is
(d) unstable for K = 10 and unstable for K = 100.
false.
[EC-2017 : 2 Marks]
(a) Both the criteria provide information relative
Q.51 A unity feedback control system is characterized to the stable gain range of the system.
by the open-loop transfer function, (b) The generated shape of the Nyquist plot is
10 K( s + 2) readily obtained from the Bode magnitude
G(s) = 3
s + 3s2 + 10 plot for all minimum phase systems.
GATE Previous Years Solved Paper 107
(c) The Routh criterion is not applicable in the Q.55 For an LTI system, the Bode plot for its gain is as
condition of transport lag, which can be illustrated in the figure shown. The number of
readily handled by the Nyquist criterion. system poles Np and the number of system zeros
(d) The closed-loop frequency response for a Nz in the frequency range 1 Hz f 107 Hz is
unity feedback system cannot be obtained Gain (dB)
from the Nyquist plot. –20 dB/dec.
[EC-2018 : 1 Mark] 100
–60 dB/dec.
Q.53 For a unity feedabck control system with the
–40 dB/dec.
K
forward path transfer function G(s) = . 10
4
10
5
10
6 7
10
s (s + 2) 0
10
1
10
2
10
3
f (in Hz)
36 dB s-plane
20 dB
0 dB
Re
0°
–180°
–270°
(a) The point –1 + j0 of the G(s) plane once in
the counter-clockwise direction.
+
G(s)
(b) The origin of the G(s) plane once in the
K
– clockwise direction.
(c) The origin of the G(s) plane once in the
Consider the negative unity feedback counter-clockwise direction.
configuration with gain k in the feed forward (d) The point –1 + j0 of the G(s) plane once in
path. The closed-loop is stable for k > k0. The the clockwise direction.
maximum value of k0 is ______ . [EC-2020 : 1 Mark]
[EC-2018 : 2 Marks]
108 Electronics Engineering Control Systems
Im
0 Re GH
(–1, j0)
+
0 +
Re
– –
0
If G(s) H(s) has one zero in the right half of the
s-plane, the number of poles that the closed-loop
system will have in the right half of the s-plane is
(a) 1 (b) 3
K K
(c) 4 (d) 0 (a) (b)
2
s (s + 2) (s + 5) s 2 (s + 2) (s + 5)
[EC-2021 : 2 Marks]
K (s + 1) K (s + 1) (s + 3)
Q.58 Consider a closed-loop control system with unity (c) 2 (d)
negative feedback and KG(s) in the forward path, s (s + 2) (s + 5) s2 (s + 2) (s + 5)
where the gain K = 2. The complete Nyquist plot [EE-1991 : 1 Mark]
of the transfer function G(s) is shown in the figure.
Note that, Nyquist contour has been chosen to Q.2 The system having the Bode magnitude plot
have the clockwise sense. Assume G(s) has no shown in figure below has the transfer function.
poles on the closed right half of the complex
plane. The number of poles of the closed-loop
transfer function in the closed right half of the 60 –20 dB/dec
complex plane is _________ . –40 dB/dec
–20 dB/dec
Im G(s)
60 ( s + 0.01) ( s + 0.1)
(a)
s 2 (s + 0.05)2
–1 Re G(s )
10(1 + 10s)
(b)
s (1 + 20s)
0.4
3(s + 0.05)
0.8
(c)
s (s + 0.1) (s + 1)
5(s + 0.1)
(a) 0 (b) 1 (d)
(s + 0.05)
(c) 2 (d) 3
[EE-1991 : 1 Mark]
[EC-2022]
GATE Previous Years Solved Paper 109
1 1 K
(c) sin t (d) sin t is given in figure. The error in phase
2 2 4 s
1+
a
[EE-1996 : 1 Mark]
Q.5 The polar plot of a type-1, 3-pole, open-loop angle and dB gain at a frequency of = 0.5 a are
system is shown in figure below. The closed- respectively
loop system is
GH-plane 20 log K
20 dB/decade
G dB
–1.42 =
a
=0 0.1a 0.5a a
Q.6 The asymptotic approximation of the log- Q.8 The Nyquist plot of loop transfer function
magnitude versus frequency plot of a minimum G(s) H(s) of a closed-loop control system passes
phase system with real poles and one zero is through the point (–1, j0) in the G(s) H(s) plane.
shown in figure. Its transfer function is
110 Electronics Engineering Control Systems
The phase margin of the system is Q.13 In the GH(s) plane, the Nyquist plot of the loop
(a) 0° (b) 45°
e 0.25s
(c) 90° (d) 180° transfer function G(s ) H (s ) = passes
s
[EE-2004 : 1 Mark]
through the negative real axis at the point.
Q.9 In the system shown in figure, the input (a) (–0.25, j0) (b) (–0.5, j0)
x(t) = sint. In the steady-state, the response y(t)
(c) (–1, j0) (d) (–2, j0)
will be
[EE-2005 : 2 Marks]
s
x(t) y (t )
s+1 Q.14 If the compensated system shown in the figure
has a phase margin of 60° at the crossover
1
(a) sin(t 45°) frequency of 1 rad/sec, then value of the gain
2
‘k’ is
1
(b) sin(t + 45°)
2 1
R(s) +– k + 0.366s Y(s )
s( s + 1)
(c) sin(t – 45°)
(d) sin(t + 45°)
[EE-2004 : 2 Marks] (a) 0.366 (b) 0.732
Q.10 The open-loop transfer function of a unity (c) 1.366 (d) 2.738
feedback control system is given as, [EE-2005 : 2 Marks]
[EE-2005 : 1 Mark]
40
Q.12 The gain margin of a unity feedback control 20
system with the open-loop transfer function is
(b) log( )
( s + 1) –1 0 1 2 3
G(s ) = . –20
s2
(a) 0 (b) 1/ 2 –40
(c) 2 (d)
[EE-2005 : 1 Mark]
GATE Previous Years Solved Paper 111
H ( j ) dB Im
40 =
(4) Re
20 –1
(c) log( )
–1 0 1 2 3
–20
–40
(a) (1) only (b) All, except (1)
(c) All, except (3) (d) (1) and (2) only
H ( j ) dB
[EE-2006 : 2 Marks]
40 Q.17 If x = Re G(j ), and y = Im G(j ) then for 0+,
20
1
the Nyquist plot for G(s) = .
(d) log( ) s (s + 1) (s + 2)
–1 0 1 2 3
–20
3
–40 (a) x = 0 (b) x =
4
1 y
[EE-2006 : 2 Marks] (c) x = y (d) x =
6 3
Q.16 Consider the following Nyquist plots of loop
[EE-2007 : 2 Marks]
transfer functions over = 0 to = . Which of
these plots represents a stable closed-loop Q.18 The asymptotic Bode magnitude plot of a
system? minimum phase transfer function is shown in
the figure.
Im
G( j ) dB
=
(1) Re
–40 dB/decade
–1
20
–20 dB/decade
Im 0 0.1 (rad/sec)
(log scale)
–20
0 dB/decade
(2)
=
Re The transfer function has
–1
(a) 3-poles and one zero.
(b) 2-poles and one zero.
Im (c) 2-poles and two zeros.
(d) 1-pole and two zeros.
(3)
= [EE-2008 : 2 Marks]
Re
–1
Q.19 The polar plot of an open-loop stable system is
shown below.
112 Electronics Engineering Control Systems
Im 1
Q.22 The frequency response G(s ) =
[s (s + 1) (s + 2)]
=
Re plotted in the complex G(j ) plane (for 0 < < )
–1.42
is
Im
=0
–3/4
The closed-loop system is (a) Re
(a) always stable
(b) marginally stable
(c) unstable with one pole on the RHS s-plane =0
(d) unstable with two poles on the RHS s-plane
Im
[EE-2009 : 1 Mark] =0
–40 dB/sec Im
80 dB =0
–60 dB/sec
Re
–60 dB/sec –1/6
Im
0.1 2 5 25 rad/sec.
–1/6
Re
10(s + 5) 1000(s + 5)
(a) (b) (d)
s (s + 2) (s + 25) s2 (s + 2) (s + 25)
100(s + 5) 80(s + 5) =0
(c) (d) 2
s (s + 2) (s + 25) s (s + 2) (s + 25)
[EE-2009 : 1 Mark] [EE-2010 : 2 Marks]
Q.21 The open-loop transfer function of a unity Q.23 The frequency response of a linear system G(j )
feedback system is given by is provided in the tabular form below.
G(j ) 1.3 1.2 1.0 0.8 0.5 0.3
0.1s
(e )
G(s ) = G(j ) –130° –140° –150° –160° –180° –200°
s
The gain margin and phase margin of the
The gain margin of this system is
system are
(a) 11.95 dB (b) 17.67 dB
(a) 6 dB and 30° (b) 6 dB and –30°
(c) 21.33 dB (d) 23.9 dB
(c) –6 dB and 30° (d) –6 dB and –30°
[EE-2009 : 2 Marks]
[EE-2011 : 1 Mark]
GATE Previous Years Solved Paper 113
Q.24 A system with transfer function, Q.27 For the transfer function,
(s 2 + 9) (s + 2) 5(s + 4)
G(s ) = G(s) =
(s + 1) (s + 3) ( s + 4) s (s + 0.25) (s2 + 4s + 25)
is excited sin( t). The steady-state output of the The values of the constant gain term and the
system is zero at highest corner frequency of the Bode plot
(a) = 1 rad/sec. (b) = 2 rad/sec. respectively are
(c) = 3 rad/sec. (d) = 4 rad/sec. (a) 3.2 and 5.0 (b) 16.0 and 4.0
[EE-2012 : 1 Mark] (c) 3.2 and 4.0 (d) 16.0 and 5.0
[EE-2014 : 2 Marks]
Q.25 The Bode plot of a transfer function G(s) is
shown in the figure below. Q.28 The magnitude Bode plot of a network is shown
Gain (dB) in the figure.
40
G( j ) dB Slope 20 dB/decade
32
20
0 10
100 (rad/s)
–8
0 1/3 1 log10
The gain (20 log |G(s)|) is 32 dB and –8 dB at
The maximum phase angle m and the
1 rad/sec and 10 rad/sec respectively. The
corresponding gain Gm respectively, are
phase is negative for all . Then G(s) is
(a) –30° and 1.73 dB (b) –30° and 4.77 dB
39.8 39.8
(a) (b) (c) +30° and 4.77 dB (d) +30° and 1.73 dB
s s2
[EE-2014 : 2 Marks]
32 32
(c) (d)
s s2 Q.29 A Bode magnitude plot for the transfer function
[EE-2013 : 1 Mark] G(s) of a plant is shown in the figure. Which one
of the following transfer functions best describes
Q.26 The Bode magnitude plot of the transfer function
the plant?
is shown below.
K (1 + 0.5s ) (1 + as) 20 log G( j 2 f )
G(s ) =
s s
s 1+ (1 + bs ) 1 +
8 36
20
Note that –6 dB/octave = –20 dB/decade. The
value of a/bK is _______ . 0
dB –20
–6 dB/Octave
0 dB/Octave
0 dB/Octave
=
(d) Re
Re
0
G1(s)
0
[EE-2015 : 1 Mark]
G2(s) 100
function G(s ) = in rad/sec is
=0 (s + 1)3
Re
1
(a) 3 (b)
3
(c) 3 (d) 3 3
Nyquist plot of the product of G1(s) and G2(s) is [EE-2016 : 1 Mark]
20 dB/dec
Im 12 dB
–40 dB/dec
0 dB
0.5 8
(b) Re
1
2s
(a)
(1 + 0.5s ) (1 + 0.25s 2 )
4(1 + 0.25s)
(b)
s (1 + 0.25s)
Im
2s
(c)
(1 + 2s) (1 + 4s)
(c) Re 4s
(d)
(1 + 2 s ) (1 + 4s )2
[EE-2016 : 2 Marks]
GATE Previous Years Solved Paper 115
Q.33 Loop transfer function of a feedback system is Q.37 The asymptotic Bode magnitude plot of
minimum phase transfer function G(s) is shown
s+3
G(s ) H (s ) = 2
. Take the Nyquist contour below.
s (s 3)
[EE-2017 : 1 Mark] 3
the phase angle G( j ) = .
2
Q.35 The transfer function of a system is given by
Which of the following options is correct?
Vo (s ) 1 s
= (a) Statement 2 is true and statement 1 is false.
Vi (s ) 1 + s
(b) Both the statements are false.
Let the output of the system be v o (t) =
(c) Both the statements are true.
Vm sin( t + j) for the input, vi(t) = Vm sin( t).
(d) Statement 1 is true and statement 2 is false.
Then the minimum and maximum values of
[EE-2019 : 2 Marks]
j (in radians) are respectively
Q.38 Consider a negative unity feedback system with
(a) and (b) and 0
2 2 2 forward path transfer function,
K
(c) 0 and (d) – and 0 G(s) =
2 (s + a) ( s b ) (s + c )
where K, a, b, c are positive real numbers. For a
Q.36 The open-loop transfer function of a unity
Nyquist path enclosing the entire imaginary
feedback system is given by
axis and right half of the s-plane in the clockwise
e 0.25s direction, the Nyquist plot of (1 + G(s)), encircles
G( s ) =
s the origin of (1 + G(s)) plane once in the
In G(s) plane, the Nyquist plot of G(s) passes clockwise direction and never passes through
through the negative real axis at the point. this origin for a certain value of K. Then, the
(a) (–1.25, j0) (b) (–0.5, j0) number of poles of G(s)/1 + G(s) lying in the
(c) (–1.5, j0) (d) (–0.75, j0) open right half of the s-plane is ______ .
[EE-2017 : 1 Mark] [EE-2020 : 1 Mark]
116 Electronics Engineering Control Systems
Q.39 A stable real linear time-invariant system with (a) 11.08 (b) 78.13
single pole at p, has a transfer function (c) 8.84 (d) 122.87
[EE-2020 : 2 Marks]
s2 + 100
H(s) = with a dc gain of 5. The smallest
s p
Answers
EC Frequency Response Analysis
Solutions
EC Frequency Response Analysis
= 10. (d)
pc 3 rad/sec.
Gain crossover frequency where gain is 1 is g,
1
G.H. = X =
( )
2 3
2 =1
1+ pc j (1 + j )
1 1 2 3
= = =1
( )
3 8 2
1 + ( 3)2 1+
2
2 3 = 1+
1
G.M. = =8 =3
X
G(j ) H(j ) = –90° – tan–1
4. (c)
= 90° tan 1 3 = 150°
2 4 2 P.M. = 180° – 150° = 30°
n (1 2 )+ 4 4 +2
11. (a)
5. Sol. N=0
At 180° GH = 1.2 (1 encirclement in CW direction and other in
1 1 ACW)
G.M. = 20 log = 20 log P = 0 (no pole in right half)
GH 1.2
So, N = P–Z
= –1.6 dB
Z = P–N=0
At GH = 1 = –190°
No roots on RH of s-plane.
P.M. = 180° +
= 180° – 190° = –10° 12. (b)
Since both G.M. and P.M. are negative. 1
G(s) H(s) =
So, the system is unstable. 2
s(s + s + 1)
6. (a, c) when,
G(s) H(s) = –180°
The non-minimum phase transfer function is
defined as the transfer function which has zeros 1
–180 = 90 tan 2
(or) poles in right side of s-plane. 1
1
–90 = tan 2
7. (c) 1
= –125° 1–
=0 2
P.M. = 180° + pc = 1 rad/sec
= 180° – 125° = 55° Value of gain at pc = 1
1
8. (a) G(s) H (s) =
2 2 2
A system is unstable when Nyquist plot of G(j ) (1 ) + j
H(j ) encloses the point (–1 + j0) and gain G.M. = –20 log1 = 0
margin of unstable system is always negative
or less than zero. Therefore, the gain margin of 13. (d)
given system is less than zero. P.M. = 180° + GH ( j )
pc
9. (d) For gc,
This is a second-order function and so its gain G( s ) H ( s ) = gc =1
margin is infinity.
118 Electronics Engineering Control Systems
1 s 1+ 2 20 log (K / ) = 10 = 140
= =1
(1 + s) (2 + s ) 1+ 2 4+ 2 K
= 107
2 =1 = 10
4+
4+ =1 2 K = 10 8
2 = –3 (Imaginary)
17. (c)
So no gain crossover frequency
20 log K = –20 dB
P.M. =
K = 10–1 = 0.1
14. (b) Zero at = 1 and poles at = 10, 100
s K ( s + 1)
G(s) H(s) = 3 H(s) =
(s + 100) s s
+1 +1
Calculating 10 100
pc,
pc
0.1(s + 1) × 10 × 100
–180° = +90 3 tan
1 =
100 (s + 10) ( s + 100)
pc 100(s + 1)
–270° = 3 tan 1 =
(s + 10) (s + 100)
100
or, = pc
18. (a)
G.M. =
Pole at 0.01 and 1 Hz gives –180° phase.
Hence cannot be determined.
Zero at 5 Hz gives +90° phase.
Calculating gc
at 20 Hz –90° phase shift is provided.
From, G(s) H (s) = 1
= Negative value 19. (d)
gc
G.M. and P.M. of the system cannot be 1
Let be a lag network.
determined. s+1
At = 0, Mag = , =–tan–1 0 = 0
15. (a)
= , Mag = 0, =–tan–1 = –90°
The encirclement of critical point (–1, 0) in
If in the direction of increasing phase shift is
A.C.W. direction is once.
decreasing system is lag network.
N = 1, P = 1 (Given)
Z = P–N=0 20. (b)
No zero in RH of s-plane.
Im
So system is stable.
=0
16. (a)
= 0.1 to 10, +120 dB change
3 zeros at 0.1,
= 10 to 100, –40 dB
Re
[i.e. +60 to +20] change –8
So, two poles at = 10, –2 –0.2
= 100, –20 dB change
One pole at = 100
K (s + 0.1)3 =0
T(s) = 2
(s + 10) ( s + 100)
GATE Previous Years Solved Paper 119
35. (c) 10
=
Transfer function is, s s s
+1 +1 +1
0.1 1 10
(s 2 + 9) (s + 2)
G(s) = Amount of shift = 20 logK = 20 log10 = 20 dB
(s + 1) (s + 3) ( s + 4)
dB
The system has zero at = 3 rad/sec.
39.8 20 0
20 log = 32 dB –20 dB =
(1)2 log 0.1 log pc
–1 +1 Re G(j )
6.02
10 20
0
0.1 1 2
–6.02 –20 dB/decade
From the Nyquist plot, it can be seen that it does +20 dB/decade
not encircle the critical point (–1, 0), The open-loop transfer function of the system is
N = P – Z, N = 0
s
The closed-loop system is unstable for +1 K
2
sufficiently large and positive K. G(s) H(s) = ...(i)
s
s +1
10
38. Sol.
where,
10
s s s 26.02 = 0.1 = 20 logK – 20 log
0.1 × 10 +1 +1 +1
0.1 1 10
or, K = 1.99 2 ...(ii)
122 Electronics Engineering Control Systems
P.M. = 180° + G( ) H ( ) = gc
± 180° 0° or 360°
1 10 The gain crossover frequency can be calculated
by
G( ) H ( ) = 1
10
=1
2
–90° or +270° + 100
As the zero is nearer to the imaginary axis hence 4 2
gc + 100 gc 100 = 0
the direction of polar plot is clockwise.
GATE Previous Years Solved Paper 123
or, 2
= 0.99, –100.99 47. Sol.
gc
or, = 0.99 rad/sec. K
gc 1 + G(s) H(s) = 1 + =0
(s + 1) (s + 2) (s + 3)
1 gc
P.M. = 180° + 90° tan (s + 1) (s2 + 5s + 6) + K = 0
10
s3 + 5s2 + 6s + s2 + 5s + 6 + K = 0
0.99 s3 + 6s2 + 11s + 6 + K = 0
= 180° 90° tan 1
10 Gain margin = 0 dB and phase margin = 0 °
84.364° It implies marginal stable system.
By Routh array:
45. (a)
N = P–Z s3 1 11
N = Number of encirclements of (–1 + j0). It is s2 6 (6 + K )
positive if Nyquist plot encircles the point –1 + j0 66 6 K
s1 0
in counterclockwise direction. 6
Z = Number of closed-loop poles lying in the s0 6+K
right half of s-plane.
For marginal stable system,
P = Number of open-loop poles lying in right
60 – K = 0
half of s-plane.
K = 60
For stability, Z = 0 N=P
48. Sol.
46. (a)
K
1 s G(s) =
G(s) = (s + 0.1) (s + 10) (s + p1 )
4 + 2s
1 1 1
1 1 G(s) = tan tan tan
and G(s) = tan tan 0.1 10 p1
2
1 1 1 1 1 1
1 G( s ) =1 = tan tan tan
At s = 0, G(s) = = 0.25 0.1 10 p1
4
= –135°
and G( s ) =0
= 0°
1 1 1 1
tan 10 tan 0.1 tan = –135°
1 p1
At s = , G(s) = = 0.5
2 1 1
84.28° 5.71° tan = 135°
and G(s) = –180° p1
=
Nyquist plot is, 1 1
tan = –135° + 90°
p1
Im
1 1
tan = 45°
p1
1
=1 p1 = 1
Re p1
–1 –0.5 0.25
49. (a)
Final slope = –60 dB/decade
which indicates that, q – p = 3
Hence, number of encirclements of (–1 + j0) = 0 Among the given options, option (a) satisfies
this condition.
124 Electronics Engineering Control Systems
56. (b)
(–1, 0) 0.4
s-plane contour is encircling 2-poles and 3-zeros
in clockwise direction hence the corresponding
G(s) plane contour encirlces origin 2-times in
anticlockwise direction and 3-times in 0.8
clockwise direction. For K = 2, the plot will be
Effectively once in clockwise direction.
–0.8 K
jImGH
–1 + j0
Answers
EE Frequency Response Analysis
9. (b) 10. (c) 11. (c) 12. (d) 13. (b) 14. (c) 15. (a) 16. (d)
17. (b) 18. (c) 19. (d) 20. (b) 21. (d) 22. (d) 23. (a) 24. (c)
25. (b) 26. (0.755) 27. (a) 28. (c) 29. (d) 30. (b) 31. (a) 32. (a)
33. (a) 34. (1.047) 35. (d) 36. (b) 37. (a) 38. (2) 39. (c)
Solutions
EE Frequency Response Analysis
10(1 + 10s) 1 1 1
T.F. = Gain = = =
s (1 + 20s) (1 + s) 1 + j 1+ j
5(s + 0.1) 1
= = 45°
s (s + 0.05) 2
1
3. (a) Output = sin t × 45°
2
1
G(s) = 1
(s 1) (s + 2) (s + 3) = sin(t 45°)
2
1 + G(s) H(s) = 0
i.e., s3 + 4s2 + s – 5 = 0
GATE Previous Years Solved Paper 127
5. (d) K
Magnitude of G( j ) = G( j ) =
Nyquist plot will be 2
1+ 2
Im a
G( j ) K K
= 0.5 a = =
Re (0.5 a)2 1.25
1.42 1+
a2
In dB
= 20 log K – 20 log (1.25)1/2
= 20 log K – 0.97 dB
From the plot,
Number of encirclement of (–1, j0) = –2 and magnitude = 20 log K
number of right sided poles in open-loop error in dB gain = 0.97 dB
system = 0 1 0.5 a
G( j ) = 0.5 a = tan = 26.56°
N = P–Z a
–2 = 0 – 2 Since it is –45°/dec (–ve slope) at = 0.5a
Z=2 phase = –22.5°
closed-loop system is unstable with two
poles on the right half of s-plane. Error in phase of G( j ) = 0.5a
= –22.5 – (–26.56)
6. (d)
= +4.06° +4.9°
Type-2:
Poles: 0, 0, 2, 25 8. (a)
Zeros: 5 Im
Gain = –40 log + 20 log K
Wg
54 = –40 log(0.1) + 20 log K
Re
K=5 (–1, j0)
1
5(1 + 0.2 s)
T.F. = 2
s (1 + 0.5s ) (1 + 0.04s)
50(s + 5)
= 2
s (s + 2) (s + 25) g is gain cross over frequency at which the gain
G( j ) H ( j ) becomes unity.
7. (a)
In this case, phase G(j ) H(j ) is –180° at = g,
K = –180°
Transfer function = G(s ) =
s So, phase margin = 180° + = 0°
1+
a
Put s = j ; 9. (b)
1
y(t) = sin(t + 45°) 11. (c)
2
s2 + 4
10. (c) T(s) =
(s + 1) (s + 4)
Im For frequency response, put s = j
( j )2 + 4
T(j ) =
( j + 1) ( j + 4)
Re 2
4
–1 + j0 =
(1 + j ) (4 + j )
Magnitude of
Wg
2
4
T(j ) = T ( j ) =
2
(1 + ) (16 + )2
as + 1 2
4
G(s) = 2 T( j ) = =0
s (1 + 2
) (16 + )2
g = gain crossover frequency
= 2 rad/sec.
at
The system output is zero at 2 rad/sec.
which open gain is loop,
phase margin = 180° + G(j ) 12. (d)
45° = 180° + G(j g)
Im
G(j g) = –130°
ja g + 1 (–1 + j0)
G(j g) = 2 Re
(j g)
= –2 × 90° + tan–1 a g
G(j g) = –180° + tan–1 a g = –135°
tan–1 a g = 45° –1 + j0 is not enclosed, system is always stable.
a g= 1 G.M. =
1
g = 13. (b)
a
0.25s
Gain = G( j g ) = 1 e
G(s) H(s) =
s
1 + a2 2g Putting s = j , for frequency response,
2 =1 j 0.25
g e
G(j ) H(j ) =
j
GATE Previous Years Solved Paper 129
–180° = 90°
4 For frequency less than 1 i.e. < 1
= 360° or 2 Gain of the system is constant as there is no
pole at origin.
j 0.25 × 2
e Gain = 20 log K = 20 log 0.1
G( j pc ) H ( j pc ) = = 0.5
j2 = –20 dB
At = 1 = 1 rad/sec or log 1 = log = 0
14. (c) There is zero, so system gain increases with slope
K + 0.366s +20 dB/decade and system gain becomes 0 dB
G(s) = and H(s) = 1
s(s + 1) at = 10 rad/sec or
K + 0.366s log = 10 = log10 = 1
O.L.T.F. = G(s) H (s) =
s(s + 1)
At = 10 or log = log 10 = 1
Phase margin = 60° at pc 2
2 = 10
(gain crossover frequency) There is pole, so slope is –20 dB/decade.
180° + G(j pc) H(j pc) = 60° Overall slope 2 < < 3
G(j pc) H(j pc) = –120° = 20 dB/decade – 20 dB/decade
0.366 = 0 dB/decade
1 1 gc
90° tan pc + tan = 120° So, gain remains constant between,
K
2 < < 3
gc = 1 rad/sec
or, 1 < log < 2
0.366 × 1
90° tan 1 (1) + tan 1 = 120° At = 3 = 100 rad/sec or
K
log = log 100 = 2
0.366 3 = 100
1
= 90° 45° + tan = 120°
K The double pole are present.
0.366 So, system gain decrease with –40 dB/decade.
1
tan = 15°
K 17. (b)
0.366
K= = 1.366 1
tan 15° G(s) =
s(s + 1) (s + 2)
15. (a) Put s = j ,
1
10 4 (1 + j ) G(j ) =
H(j ) = j (1 + j ) (2 + j )
(10 + j ) (100 + j )2
j(1 j ) (2 j )
(1 + j ) = 2 2
= (1 + ) (4 + )
2
j j
10 × 1 + × 1+ j(2 3 j 2
)
10 100 = 2 2
(1 + ) (4 + )
K (1 + j )
H(j ) = 2 2
j j 3 j(2 )
1+ × 1+ = 2 2
10 100 (1 + ) (4 + )
130 Electronics Engineering Control Systems
s
K 1+
5
G(s) =
s s
s2 1 + 1+
+ 2 25
–1 =
Re
–1.42 = – At = 0.1 ( 2 rad/sec)
Gain (dB) = 20 log K – 40 log
80 = 20 log K – 40 log 0.1
20 log K = 40
Nyquist-plot
K = 100
+
=0
s
100 1 +
5
G(s) =
Two clockwise encirclement of 1 + j0, s s
s2 1 + 1+
N = –2 2 25
Open-loop system is stable P = 0
1000(s + 5)
N = P–Z = 2
s (s + 2) (s + 25)
–2 = 0 – Z
Z = Number of closed-loop poles in RHS of
21. (d)
s-planes. Hence the system is unstable.
Open-loop transfer function,
20. (b) e 0.1s
G( j ) = 3 rad/sec
/ pc = –180° = –
25. (b)
0.1 pc = –
2 K
Let, G(s) =
sn
–0.1 =
pc 2 K
G(j ) =
pc =5 ( j )n
e 0.1
is always 1 for any value of , Q Gain = 32 dB at = 1 rad/sec.
1 K
G( j ) 20 log n = 32
pc = 5 = 1
5
1 20 log K = 32
Gain margin = 20 log
G( j K = 39.8
pc )
Now,
= 20 log 5 = 23.9 dB
Q Gain = –8 dB at = 100 rad/sec.
23. (a) 39.8
20 log = –8
At gain across over frequency ( gc), magnitude 10 n
of G(j ) is 1. 10 n = 100
G( j n=2
gc ) =1
Phase of G(j ) = G(j gc) = –150° 26. Sol.
Phase margin = 180° + G(j gc) K(1 + 0.5s) (1 + as)
= 180° – 150° = 30° Given, G(s) =
s s
s 1+ (1 + bs ) 1 +
At phase cross frequency ( pc), phase of G(j ) is 8 36
–180°, G(j pc) = –180°
(1 + as) is addition of zero to the transfer function
M = magnitude of G(j ) at
whose contribution in slope = +20 dB/decade
pc = G( j pc ) = 0.5 or –6 dB/octave.
(1 + bs) is addition of pole to the transfer function
1 1
Gain margin = 20 log = 20 log = 6 dB whose contribution in slope = –20 dB/decade
M 0.5
or –6 dB/octave.
24. (c) Observing the change in the slope at different
For sinusoidal excitation, corner frequencies, we conclude that,
s=j 1
a= rad/sec.
4
( 2 + 9) ( j + 2)
G(j ) = 1
( j + 1) ( j + 3) ( j + 4) and b= rad/sec.
24
For zero steady-state output,
From = 0.01 rad/sec to = 8 rad/sec.
G( j ) = 0 slope = –20 dB/decade
Let the vertical length in dB be y,
2 2
( + 9) +4
= 0 y
2 2 2 –20 =
( + 1) ( + 9) ( + 16 )
log 8 log 0.01
132 Electronics Engineering Control Systems
y 28. (c)
or, –20 =
log 8 + 2 From the given Bode plot, it is clear that corner
or, y = 58 dB frequencies,
Appyling, y = mx + C at = 0.01 rad/sec. 1
we have, 58 = –20 log 0.01 + C c1 and c2 = 1
=
3
or, C = 58 – 40 = 18 Transfer function of given system is given
Now, C = 20 log K by
18 C(s) 1 + 3s 1 + Ts
or, log K = = 0.9 = =
20 T(s) =
R(s ) 1+s 1 + Ts
K = log–1 (0.9) = (10)0.9 = 7.94
1
1 Here, T = 3 and T = 1 or =
3
a 4
= As < 1, therefore the transfer function T(s)
bK 1
× 7.94
24 1
represents a lead compensator having = .
24 3
= = 0.755
4 × 7.94 Maximum phase shift,
a
= 0.755 1
bK 1
1 1 1 3
= tan = tan
m
2 2
27. (a)
3
5(s + 4)
Given, G(s) = 1 2 3 1
s (s + 0.25) (s2 + 4s + 25) = tan × = tan 1 = 30°
3 2 3
Reducing G(s) in time constant form, we have
1+3
s Also, T(j ) =
5× 4 1 + 1+ j
4
G(s) =
s 4 1 1+9 2
s 0.25 1 + 25 1 + s + s2
0.25 25 25 T( j ) =
2
1+
20(1 + 0.25s)
= Gain Gm in dB = 20 log T ( j )
s [0.25(1 + 4s)] [25(1 + 0.16s + 0.04s2 )]
2
or, 1+9 m
= 20 log 10 2
3.2(1 + 0.25s) 1+ m
G(s) = 2
s (1 + 4s) (1 + 0.16s + 0.04s ) 1 1
Now, m = =
The value of constant gain term = 3.2 T 3
Also,
2
1
j 1+ 9×
3.2 1 + 3
4 Gm = 20 log 10 2
G(j ) = 2 1
j 1+
(j ) 1+ 1 + j 0.16 3
0.25 25
Corner frequencies are:
1+ 3
1 = 4 rad/sec = 20 log 10 = 20 log 10 3
1
2 = 0.25 rad/sec 1+
3
and 3 = 5 rad/sec
Highest corner frequency = 3 = 5 rad/sec. or, GM = 4.77 dB
GATE Previous Years Solved Paper 133
30. (b)
1
G1(s) =
s
=
=0
G2(s) = s
=0
1 =
G1(s) × G2(s) = s=1
s
31. (a)
100
G(s) =
(s + 1)3
From the Nyquist plot G(s) H(s) encircle –1 + j0
100 once in clockwise direction.
G(j ) =
(1 + j )3
34. Sol.
100
= Forward path transfer function,
1 + ( j )3 + 3( j )3 + 3 j
s
Ke
100 G(s) =
= s
(1 3 2 ) + j (3 3
)
Given:
2 2 2 Phase margin = 30°
100[(1 3 ) j (3 ) ]
=
[(1 3 2
)+ 2
(3 2 2
) ] or, Phase margin = 180°
30° = 180° +
For phase crossover frequency,
= –150°
Img[G(j )] = 0
Hence, (3 – 2) = 0 = G( j ) = gc
At = gc 37. (a)
(gain crossover frequency)
K
G(s) =
G( j ) = 1 s s
s 1+ 1+
1 20
K ×1
or, =1 Transfer function shows two-poles and no
zeros. So statement 1 is wrong.
= gc = K rad/sec.
1 1
G( j ) = gc = –90° – 57.3 K G(j ) = 90 tan tan
20
–90° – 57.3 K° = –150° 3
G( j ) = 270° = radian
– 57.3 K° = –60° 2
60 So, statement 2 is correct.
K= = 1.047
57.3
38. Sol.
35. (d) K
O.L.T.F. G(s) =
Vo (s) 1 s ( s + a ) (s b ) ( s + c )
= = H (s)
Vi (s) 1+s N = P – Z, P=1
For the minimum and maximum values of ‘ ’, –1 = 1 – Z, N = –1
1 j Z=2
H(j ) =
1+ j
39. (c)
H(j ) = –2 tan–1
At = 0; s2 + 100
H(s) = T.F. =
H(j ) = 0° s p
At = , D.C. gain = 5
H(j ) = – 100
= 5 = p – 20
36. (b) p
2
180 pc + 100
G(j ) = 0.25 × 90° H(j ) =
j + 20
= –180° 2
+ 100
H( j ) =
180 pc 2
0.25 × = –90° + 400
2
+ 100
4 =1
pc = =2 2
+ 400
2
0.25s = 8.84 rad/sec.
G( j ) e
= pc = = = 0.5
s 2
= pc
ELECTRO NICS EN GINEERIN G Q.4 A certain linear time invariant system has the
state and the output equations given below:
(GATE Previous Years Solved Papers)
x1 1 1 x1 0
= + u
Q.1 Given the following state space description of a x2 0 1 x2 1
system,
x1
y = [1 1] is
x1 2 0 x1 0 x2
= + u
x2 0 4 x2 1 dy
x1(0) = 1, x2(0) = –1, u(0) = 0 then is
x1 dt t = 0
y = [1 0]
x2 (a) 1 (b) –1
Find the state transmission matrix. (c) 0 (d) None of the above
[EC-1988 : 2 Marks] [EC-1997 : 2 Marks]
Q.2 A linear second-order single-input continuous Q.5 The system mode described by the state
time system is described by following set of equations,
differential equations: 0 1 0
x = x+ u
x1 (t ) = –2x1(t) + 4x2(t) 2 3 1
Y = [1 1] x is
x2 (t ) = 2x1(t) – x2(t) + u(t)
(a) controllable and observable
where, x1(t) and x2(t) are the state variables and
(b) controllable, but not observable
u(t) is the control variable. The system is
(c) observable, but not controllable
(a) controllable and stable.
(d) neither controllable nor observable
(b) controllable but unstable.
[EC-1999 : 1 Mark]
(c) uncontrollable and unstable.
(d) uncontrollable but stable. Q.6 For the system described by the state equation,
[EC-1991 : 2 Marks] 0 1 0 0
Q.3 A linear time invariant system is described by x= 0 0 1 x+ 0 u
the state variable model 0.5 1 2 1
X = AX + BU and W = CW + DU is x(t ) = .
2t
2e
GATE Previous Years Solved Paper 137
If the initial state vector of the system changes to The set of equations that correspond to this
signal flow graph is
1
x(0) = . Then the system response becomes x1 0 x1 1 0
1 u1
d
(a) x2 = 0 x2 + 0 0
dt u2
t x3 0 x3 0 1
e
x (t ) = .
t x1 0 x1 0 0
e
d u1
(b) x2 = 0 x2 + 0 1
dt u2
Q.14 The eigen value and eigen-vector pairs ( i, vi) x3 0 x3 1 0
for the system are:
x1 0 x1 1 0
d u1
1 1 (c) x2 = 0 x2 + 0 1
(a) 1, and 2, dt u2
1 2 x3 0 x3 0 0
1 1 x1 0 x1 0 1
(b) 2, and 1, d u1
1 2 (d) x 2 = 0 x2 + 0 0
dt u2
x3 0 x3 1 0
1 1
(c) 1, and 2, [EC-2008 : 2 Marks]
1 2
1 1 0 1
(d) 2, and 1, Q.17 Consider the matrix P = . The value
1 2 2 3
[EC-2007 : 2 Marks] of eP is
– 1 2 1 2
2e e e e
(d)
1 2 1 2
2e + 2e e + 2e
1 x3 1/s
x3 [EC-2008 : 2 Marks]
–
dx
x2 x2 Q.18 Consider the system = Ax + Bu with
1/s dt
x1 1 0 p
x1 A= and B = where p and q are
1 1/s 0 1 q
Q.23 The state-variable equations of the system in the Q.26 An unforced linear time invariant (LTI) system
figure above are: is represented by
x1 1 0 x1
1 0 1 =
(a) X = X+ u x2 0 2 x2
1 1 1
y = [1 1] X + u If the initial conditons are x 1 (0) = 1 and
x2(0) = –1, the solution of the state equation is
1 0 1 (a) x1(t) = –1, x2(t) = 2
(b) X = X+ u
1 1 1 (b) x1(t) = –e–t, x2(t) = 2e–t
y =[ 1 1] X + u (c) x1(t) = e–t, x2(t) = –e–2t
(d) x1(t) = –e–t, x2(t) = –2e–t
1 0 1
(c) X = X+ u [EC-2014 : 2 Marks]
1 1 1
y =[ 1 1] X u Q.27 Consider the state space system expressed by
the signal flow diagram shown in the figure.
1 1 1
(d) X = X+ u c3
c2
0 1 1
y = [1 1] X u 1 s
–1
s
–1
s
–1
u y
x3 x2 x1 c 1
[EC-2013 : 2 Marks] a3
a2
Q.24 The state transition matrix e4t of the system a1
shown in figure above is
The corresponding system is
t t
e 0 e 0 (a) always controllable.
(a) t t
(b) t t
te e te e (b) always observable.
(c) always stable.
t t t
e 0 e te (d) always unstable. [EC-2014 : 2 Marks]
(c) t t
(d) t
e e 0 e
Q.28 The state equation of a second-order linear
[EC-2013 : 2 Marks] system is given by
Q.25 Consider the state space model of a system, as x(t ) = Ax(t ), x(0) = x0
given below: t
1 e 0
x1 1 1 0 x1 0 For x0 = , x( t ) = and for x0 = ,
1 e t 1
x2 = 0 1 0 x2 + 4 u
t 2t
x3 0 0 2 x3 0 e e
x( t ) =
t 2t
x1 e + 2e
y = [1 1 1] x2 3
When x0 = , x(t ) is
x3 5
The system is 8 e t + 11 e 2 t 11 e t
8e 2t
Q.29 The state transition matrix (t) of a system (a) controllable but not observable.
(b) observable but not controllable.
x1 0 1 x1
= is (c) both controllable and observable.
x2 0 0 x2
(d) neither controllable nor observable.
t 1 1 0 [EC-2016 : 2 Marks]
(a) (b)
1 0 t 1
Q.33 Consider the state space realization:
0 1 1 t
(c) (d) x 1 (t ) 0 0 x1 (t ) 0
1 t 0 1 = + u(t ) with the
x 2 (t ) 0 9 x 2 (t ) 45
[EC-2014 : 2 Marks]
x1 (0) 0
Q.30 The state variable representation of a system is initial condition = , where u(t)
x2 (0) 0
given as,
denotes the unit step function. The value of
0 1 1
x = x; x(0) =
0 1 0
lim x12 (t ) + x22 (t ) is _______ .
y = [0 1]x t
The response y(t) is [EC-2017 : 1 Mark]
(a) sin(t) (b) 1 – et
Q.34 A second-order LTI system is described by the
(c) 1 – cos(t) (d) 0
following state equations:
[EC-2015 : 2 Marks]
d
x 1 (t ) x 2 ( t ) = 0
Q.31 A network is described by the state model as, dt
x1 = 2x1 – x2 + 3u d
x2 (t ) + 2 x1 (t ) + 3x2 (t ) = r(t)
dt
x2 = –4x2 – u
where x1(t) and x2(t) are the two state variables
y = 3x1 – 2x2 and r(t) denotes the input. The output c(t) = x1(t).
Y (s) The system is
The transfer function, H (s ) = is
U (s) (a) undamped (oscillatory)
(b) underdamped
11 s + 35 11 s 35
(a) (b) (c) critically damped
(s 2) (s + 4) (s 2) (s + 4)
(d) overdamped [EC-2017 : 2 Marks]
11 s + 38 11 s 38
(c) (d) Q.35 The state equation and the output equation of a
(s 2) (s + 4) (s 2) (s + 4)
control system are given below:
[EC-2015 : 2 Marks]
4 1.5 2
x = x+ u
Q.32 A second-order linear time-invariant system is 4 0 0
described by the following state equations: y = [1.5 0.625 x]
d The transfer function representation of the
x1 (t ) + 2 x1 (t ) = 3u(t )
dt system is
d 3s + 5 3s 1.875
x2 (t ) + x2 (t ) = u(t ) (a) (b)
dt
2
s + 4s + 6 s 2 + 4s + 6
where x1(t) and x2(t) are the two state variables 4s + 1.5 6s + 5
(c) 2 (d) 2
and u(t) denotes the input. If the output s + 4s + 6 s + 4s + 6
c(t) = x1(t), then the system is [EC-2018 : 2 Marks]
GATE Previous Years Solved Paper 141
0 1 0 1H
vo(t)
(a) A = 0 0 1 and C = [0 0 1] 1
3 2 1
+
is(t) vC(t) 1F 1
–
0 1 0
(b) A = 0 0 1 and C = [0 0 1]
1 2 3
representation X = AX + BU , Y = CX + DU , is
d v 4 4 v 0 4 i1
(a) = + given as
dt i 2 4 i 4 0 i2
(a) D + C(sI – A)–1 B (b) B(sI – A)–1 C + D
d v 4 4 v 4 0 i1 (c) D(sI – A)–1 B + C (d) C(sI – A)–1 D + B
(b) = +
dt i 2 4 i 0 4 i2 [EE-1993 : 1 Mark]
142 Electronics Engineering Control Systems
Q.2 Consider a second order system whose state Q.7 Given the homogenous state-space equation
space representation is of the form
3 1
X = AX + BU . If x1(t) = x2(t), then system is X= x the steady-state value of
0 2
(a) controllable (b) uncontrollable
(c) observable (d) unstable xss = lim x(t ), given the initial state value of
t
[EE-1993 : 1 Mark]
x(t) = [10 – 10]T, is
Q.3 The matrix of any state space equations for the 0 3
transfer function C(s)/R(s) of the system, shown (a) xss = (b) xss =
0 2
below in figure is
10
(c) xss = (d) xss =
R(s ) 3 +
–
1/s C(s ) 10
[EE-2001 : 1 Mark]
Q.5 A system is described by the state equation with ‘u’ as unit impulse and with zero initial
state, the output ‘y’ becomes
X = AX + BU . The output is given by Y = CX.
(a) 2e2t (b) 4e2t
4 1 1 (c) 2e4t (b) 4e4t
Where, A = ,B= , C = [1 0] .
3 1 1 [EE-2002 : 2 Marks]
Transfer function G(s) of the system is
s 1 2 3 1
(a) (b) Q.10 For the system X = X+ u , which of
2 2 0 5 0
s + 5s + 7 s + 5s + 7
s 1 the following statement is true?
(c) 2 (d) 2
s + 3s + 2 s + 3s + 2 (a) The system is controllable but unstable.
[EE-1995 : 1 Mark]
(b) The system is uncontrollable and unstable.
Q.6 Given the matrix: (c) The system is controllable and stable.
0 1 0 (d) The system is uncontrollable and stable.
A= 0 0 1 [EE-2002 : 2 Marks]
6 11 6 Q.11 A second order system starts with an initial
Its eigen values are ________ .
2
[EE-1995 : 1 Mark] condition of without any external input.
3
GATE Previous Years Solved Paper 143
The state transition matrix for the system is Statement for Common Data Questions (14 and 15):
2t
e 0 0 1 1
given by . The state of the system at A state variable system X (t ) = X (t ) + U (t ),
0 e t 0 3 0
the end of 1 second is given by with the initial condition X(0) = [–1 3]T and the unit
0.271 0.135 step input u(t) has
(a) (b)
1.100 0.368 Q.14 The state transition matrix
0.271 0.135 1 3t
(c) (d) 1 (1 e )
0.736 1.100 (a) 3
3t
[EE-2003 : 1 Mark] 0 e
d2 Bd K2 K 1 t 3t
2
+ + = Va 1 (e e )
dt J dt LJ LJ (c) 3
3t
The above equation may be organized in the 0 e
state space form as follows:
1 (1 e t )
(d) t
[EE-2005 : 2 Marks]
d2 0 e
d
dt 2 = P dt + QVa
d Q.15 The state transition equation
dt t e t
t e t
(a) X (t ) = (b) X (t ) =
where the ‘P’ matrix is given by e t
3e 3t
B K2 K2 B 3t 3t
t e t e
(a) J LJ (b) LJ J (c) X (t ) = (d) X (t ) =
3t t
1 0 0 1 3e e
[EE-2005 : 2 Marks]
0 1 1 0
K2 Q.16 For a system with the transfer function,
(c) B (d) B K2
LJ J J LJ 3(s 2)
H (s) = 3
[EE-2003 : 2 Marks] s + 4s 2 2 s + 1
The matrix A in the state space form x = Ax + Bu
Q.13 The state variable description of a linear
is equal to
autonomous system is, X = AX, where X is the
two dimensional state vector and A is the system 1 0 0 0 1 0
(a) 0 1 0 (b) 0 0 1
0 2
matrix given by A = . The roots of the 1 2 4 1 2 4
2 0
0 1 0 1 0 0
characteristic equation are
(c) 3 2 1 (d) 0 0 1
(a) –2 and +2 (b) –j2 and +j2
1 2 4 1 2 4
(c) –2 and –2 (d) +2 and +2
[EE-2006 : 1 Mark]
[EE-2004 : 2 Marks]
144 Electronics Engineering Control Systems
Q.17 The state equation for the current I1 shown in (a) 0 (b) 1
the network shown below in terms of the voltage (c) 2 (d)
Vx and the independent source V, is given by [EE-2008 : 2 Marks]
3 0.2 H 5 Statement for Common Data Questions (20 and 21):
+ V – A system is described by the following state and output
x I2
equations:
V I1 –
0.5 H + 0.2Vx
dx1 (t )
= 3x1 (t ) + x2 (t ) + 2 u(t )
dt
dx2 (t )
= 2 x2 (t ) + u(t )
dI1 5 dt
(a) = 1.4 Vx 3.75 I 1 + V
dt 4 y(t) = x1(t)
dI1 5 Q.20 The system transfer function is
(b) = 1.4 Vx 3.75 I1 V
dt 4
s+2 s+3
dI1 5 (a) 2 (b) 2
(c) = 1.4 Vx + 3.75 I 1 + V s + 5s 6 s + 5s + 6
dt 4
2s + 5 2s 5
dI1 5 (c) 2 (d) 2
(d) = 1.4 Vx + 3.75 I 1 V s + 5s + 6 s + 5s 6
dt 4
[EE-2009 : 2 Marks]
[EE-2007 : 2 Marks]
Q.21 The state-transition matrix of the above system
Statement for Linked Answer Questions (18 and 19):
is
The state space equation of a system is described by
x = Ax + Bu, y = Cx where x is state vector, u is input, y e 3t 0
(a)
e 2 t + e 3t e 2t
0 1 0
is output and A = ,B= , C = [1 0] . 3t 2t 3t
0 2 1 e e e
(b)
2t
0 e
Q.18 The transfer function G(s) of this system will be
3t 2t 3t
s s+1 e e +e
(a) (b) (c)
2t
(s + 2) s ( s 2) 0 e
s 1 e 3t e 2t
e 3t
(c) (d) (d)
(s 2) s ( s + 2) 2t
0 e
[EE-2008 : 2 Marks]
[EE-2009 : 2 Marks]
Q.19 A unity feedback is provided to the above system
G(s) to make it a closed-loop system as shown Q.22 The system X = AX + BU and
in figure. 1 2 0
A= , B=
+ 0 2 1 is
r (t ) G(s ) y(t )
– (a) stable and controllable
(b) stable but uncontrollable
(c) unstable but controllable
For a unit step input r(t), the steady state error (d) unstable and uncontrollable
in the input will be
[EE-2010 : 2 Marks]
GATE Previous Years Solved Paper 145
[EE-2013 : 2 Marks] x2
u2 1/s y2
1 –1
Q.25 The response y(t) to a unit step input is
1 1 2t 1 2t 1 t 1
(a) e (b) 1 e e
2 2 2 2 (a) When u1 is the only input and y1 is the only
(c) e–2t – e–t (d) 1 – e–t output.
[EE-2013 : 2 Marks] (b) When u2 is the only input and y1 is the only
output.
Q.26 The state transition matrix for the system (c) When u1 is the only input and y2 is the only
x1 1 0 x1 1 output.
= + u is (d) When u2 is the only input and y2 is the only
x2 1 1 x2 1
output.
[EE-2015 : 2 Marks]
146 Electronics Engineering Control Systems
Q.29 Consider a linear time invariant system x = Ax , Q.32 Consider the system described by the following
state space representation:
with initial conditions x(0) at t = 0. Suppose
and are eigen vectors of (2 × 2) matrix A x1 ( t ) 0 1 x1 ( t ) 0
= 0 + u(t )
corresponding to distinct eigen values 1 and 2 x2 (t ) 2 x2 (t ) 1
respectively. Then the response x(t) of the system
x1 ( t )
due to initial condition x(0) = is y(t) = [1 0]
x2 (t )
(a) e 1t (b) e 2t
x1 ( t ) 1
(c) e 2t (d) e 1t + e 2t If u(t) is a unit step input and = ,
x2 (t ) 0
[EE-2016 : 2 Marks]
value of output y(t) at t = 1 sec. (Rounded off to
Q.30 The second order dynamic system, 3 decimal places), is _______ .
dX [EE-2017 : 2 Marks]
= PX + Qu , y = RX
dt
Q.33 Consider a state-variable model of a system:
has the matrices P, Q and R as follows:
xˆ 1 0 1 x1 0
1 1 0 = + r
P= ,Q = , R = [0 1] xˆ 2 2 x2
0 3 1
x1
The system has the following controllability and y = [1 0]
x2
observability properties:
where ‘y’ is the output, and ‘r’ is the input. The
(a) controllable and observable
damping ratio and the undamped natural
(b) not controllable and observable
frequency n (rad/sec) of the system are given by
(c) controllable but not observable
(d) not controllable and not observable (a) = , n =
[EE-2017 : 2 Marks]
x1 ( t ) (d) = , n =
y(t) = [1 0]
x2 (t ) [EE-2017 : 2 Marks]
(s + 2) (s 2)
(a) 2 (b) 2
(s 2s 2) (s + s 4)
(s 4) (s + 4)
(c) 2 (d) 2
(s + s 4) (s s 4)
[EE-2017 : 2 Marks]
GATE Previous Years Solved Paper 147
Answers
EC State Space Analysis
9. (d) 10. (b) 11. (b) 12. (a) 13. (a) 14. (c) 15. (d) 16. (d)
17. (d) 18. (c) 19. (b) 20. (c) 21. (c) 22. (d) 23. (a) 24. (a)
25. (b) 26. (c) 27. (a) 28. (b) 29. (d) 30. (d) 31. (a) 32. (a)
33. (5) 34. (d) 35. (a) 36. (c) 37. (a) 38. (b)
Solutions
EC State Space Analysis
1. Sol. 0
B=
2 0 1
A
0 4
2 4 0 4
AB = =
s+2 0 +2 1 1 1
sI – A =
0 s+4
0 4
[sI – A]–1 = Qc =
1 1
1 s+4 0
( s + 2) ( s + 4) 0 s + 2 Qc = 0 – 4 = 4 0
1 Hence the given system is controllable.
0
s+2 Characteristic equation,
[sI – A]–1 =
1 [sI – A] = 0
0
s+4
s+2 4
State transition matrix, =0
2 s+1
(t) = eAt = L –1{[sI – A]–1}
(s + 2) (s + 1) – 8 = 0
2t
At e 0
(t) = e = 3 ± 9 + 24
4t s=
0 e
2
= –4.37, 1.37
2. (b)
Since 1 pole lie in RHS of s-plane.
x1 2 4 x1 0 So, the given system is unstable.
= + u(t )
x2 +2 1 x2 1
Qc = [B AB]
148 Electronics Engineering Control Systems
3. (b, c) 5. (a)
1 0 Qc = [B AB A2B ... An – 1 B]
A= 0 1
0 2
A=
2 3
0
B= 0
1
B= 1
1 0 0 0
AB = = C = [1 1]
0 2 1 2
Qc = [B AB] +1
AB =
3
0 0
Qc = 0 1
1 2
Qc = 0
1 3 2×2
Qc = 0 – 0 = 2
So, the given system is not completely Order 2, rank 2
controllable, Controllable,
2
1 0 Q0 = [CT AT CT AT CT ... ...]
AT = 0 2 1 0 2
CT = , AT =
C = [1 2] 1 1 3
1 1 2
CT = Q0 = 0
2 1 2
1 0 1 1 rank 2 observable.
AT CT = =
0 2 2 4
6. (a)
Qo = [CT ATCT]
0 1 0 0
1 1
Qo = x = 0 0 1 x + 0 [ 0.5 3 5] x + v
2 4
0.5 1 2 1
Qo = –4 – (–2) = –2 0
0 1 0
So, the given system is completely observable.
x = 0 0 1 x+v
(b) The system is not completely controllable.
0 2 3
(c) The system is completely observable.
Characteristic equation
4. (a) = 3+3 2+2 +0=0
x1 = x1 – x2 = 0, –1, –2
s 1 0 s 1 0
= [sI – A] =
1 s 1 0 s 1
eAt = [sI – A]–1
(s 1) 0
+1 (s 1) 1
0
(sI – A)–1 = s 1 et 0
(s 1)2 = =
1 0 et
0
1 s 1
0
s 1
= +1 1 11. (b)
2 s 1
(s 1) Eigen values of A = [ ]
Eigen values of W = [µ]
L –1[sI – A]–1 = e At [ x(0)]
The eigen values of a system are always unique.
et 0 1 et So, [ ] = [µ]
= =
tet et 0 tet But a system can be represented by different state
models having different set of state variables,
9. (d) X=W
x1 3 1 x1 1 X W
= + u
x2 2 0 x2 0 Both are possible conditions.
x1 1 12. (a)
y = [1 0] + u
x2 0 (t) = L –1[sI – A]–1
Qc = [B AB] 1 1
1 s 0 0 1 1 s 1
= L =L
3 0 s 1 0 1 s
AB =
2
s 1
1 3 2 2
0 1 s +1 s +1
Qc =
0 2 = L
1 s
Controllable s2 + 1 s2 + 1
Qo = [CT ATCT]
cos t sin t
1 T 3 2 =
CT = , A = sin t cos t
0 1 0
150 Electronics Engineering Control Systems
d x1 0 x1 0 1
d u1
dt 1 1 0 x2 = 0 x2 + 0 0
= + u dt u2
dia 1 10 ia 10 x3 0 x3 1 0
dt
d 18. (c)
= – + ia ...(i)
dt 1 0 p
A= ; B=
dia 0 1 q
= – – 10ia + 10 u ...(ii)
dt For controllability condition is,
Taking Laplace transform (i) and (ii), Qc = [B, AB, ... An – 1 B] 0
s (s) = – (s) + Ia(s)
1 0 p p+0 p
(s + 1) (s) = Ia(s) ...(iii) AB = = =
0 1 q 0+q q
sIa(s) = – (s) – 10 Ia(s) + 10 U(s)
(s) = (–10 – s) Ia(s) + 10 U(s) p p
So, Qc = =0
= (–10 – s) (s + 1) (s) + 10 U(s) q q
= –[s2 + 11s + 10] (s) + 10 U(s) So the system is uncontrollable for all values of
2
–[s + 11s + 11] (s) = 10 U(s) p and q.
(s) 10
= 2 20. (c)
U (s) ( s + 11 s + 11)
Forward path gain,
14. (c) 1 1 1
P1 = 2 (0.5) = 2
Sum of the eigen value = Trace of the principle s s s
diagonal matrix, 1 1
P2 = 2 (1) (0.5) =
Sum = –3 s s
Only option (a) satisfies both conditions. =1
1
2 =1
15. (d)
1 1 1 1
Multiplication of the eigen value = determinant = 1 = 1+ + 2
s s 2 s s
of the matrix.
From options it seems determinant should Transfer function of the system,
be ±2. Only option (d) satisfies as det = 2. Y (s) P1 1 + P2 2
=
U (s)
16. (d)
11
– +
s s 2s+1
= =
1 1 s2 + s + 1
1+ + 2
1 x3 1/s s s
u1 x3
– 21. (c)
x2 x2 Y1 ( s) 1
1/s =
U(s) s+2
Y2 (s ) 2
x1 =
u2 x1 U(s ) s+2
1 1/s
Y1 (s) X1 (s) 1
=
X1 ( s ) U ( s ) s+2
–
GATE Previous Years Solved Paper 151
Y2 (s ) X2 (s) 2 a1 a2
=
X2 (s) U (s) s+2 A2B = 0
X1 ( s ) 1 Y (s) 0
= and 1 =1
U(s) s+2 X1 ( s )
0 0 a1 a2
X2 (s ) 1 Y (s) Qc = 0 a2
= and 2 =2 0
U (s) s+2 U (s) 1 0 0
sX1(s) + 2X1(s) = U(s)
For system to be controllable,
and Y1(s) = X1(s)
sX2(s) + 2X2(s) = U(s) Qc 0
and Y2(s) = 2X2(s) (0 a1 a22 ) 0
x1 (t ) + 2 x1 (t ) = U(t) a1 0
and y1(t) = x1(t) a2 0
T T 1
y = [ y 1 y 2 ] = [1 2] = 1/s 1/s
2
So, x1 = –x1 – u
x1 (t ) = –2x1(t) + u(t)
x2 = ( x 2 + x1 ) = ( x 2 x1 u)
x2 (t ) = –2x2(t) + u(t) x2 = x1 – x2 + u
x1 2 0 x1 1 y = x2
= + u(t )
x2 2 0 x2 1 y = x1 – x2 + u
or, x = [–2] x + [1] u x1 1 0 x1 1
= + u
Only option (b) is satisfied. x2 1 1 x2 1
1 0 1
22. (d) x = X+ u
1 1 1
x1 0 a1 0 x1 0
x2 = 0 0 a2 x2 + 0 u 24. (a)
x3 a3 0 0 x3 1 1 0
A=
1 1
x1
y = [1 0 0] x2 s+1 0
sI – A =
x3 1 s+1
Qc = [B AB A2B] ..(i) 1
0
s+1
0 a1 0 0 0 [sI – A]–1 = 1 1
AB = 0 0 a2 0 = a2 2 s+1
(s + 1)
a3 0 0 1 0
(t) = eAt = L –1{(sI – A)–1}
0 a1 0 0 0 e t
0
A2B = AAB = 0 0 a2 0 = a2 eAt = t t
te e
a3 0 0 1 0
152 Electronics Engineering Control Systems
Qo 1 Qc 0
where, Qc = [B : AB : A2B]
Here, Qo = 1 ( Unobservable)
0 0 1
26. (c)
Qc = 0 1 a3
x1 1 0 x1 1 a3 a2 + a32
=
x2 0 2 x2
Q Qc 0 and rank of Qc = Rank of A = 3
x1 = –x 1 ...(i)
The system is controllable.
x2 = –2x 2 ...(ii)
The system is said to be observable if, the rank
Applying Laplace transform on both equations. of observability matrix Qo is equal to the rank of
sX1(s) – x1(0) = –X1(s) the state matrix A. However, if the observability
X1(s) [s + 1] = X1(0) [Given, x1(0) = 1] matrix Qo is a square matrix then the condition
1 for observability is,
X1(s) =
s+1 Qo 0
e–t = x1(t)
GATE Previous Years Solved Paper 153
t 2t
0 e e 30. (d)
For, x0 = ; x(t ) =
1 e t
+ 2e 2t The response of the system is given by
x(t) = L –1[(sI – A)–1 x(0) + (sI – A)–1 B U(s)]
Using the linearity property in equation (i),
and the complete response,
K1 x1(t) = L –1 [sI – A]–1 x1(0) K1
y(t) = [C] x(t)
K2 x2(t) = L –1 [sI – A]–1 x2(0) K2
From the given state model,
Using the linearity property as,
K1 x1(t) + K2 x2(t) = L –1 [sI – A]–1 0 1
A= ; B = 0; C = [0 1]
= [K1 x1(0) + K2 x2(0)] ...(ii) 0 1
Also, X3(s) = [sI – A]–1 x3(0) 1
and x(0) =
1 0 3 0
So, K1 + K2 =
1 1 5 1
s 1 1 s+1 1
K1 3 (sI – A)–1 = =
0 s+1 s ( s + 1) 0 s
=
K1 + K 2 5
1 s+1 1 1
K1 = 3 (sI – A)–1 x(0) =
K2 = 8 s (s + 1) 0 s 0
So from equation (ii), we get x(t),
1 s+1 1 /s
x(t) = K1x1(t) + K2 x2(t) = =
s (s + 1) 0 0
t t 2t
e e e x(t) = L –1[(sI – A)–1 x(0)]
= 3 +8
t t 2t
e e + 2e 1
= u(t )
0
t 2t
11 e 8e and the complete response,
= t 2t
11 e + 16 e 1
y(t) = [0 1] x(t ) = [0 1] =0
0
154 Electronics Engineering Control Systems
x1 (t ) + 2 x1 (t ) = 3u(t) 45
lim x2 (t ) = lim sX2 (s ) = =5
t s 0 9
x2 (t ) + x2 (t ) = u(t)
So, Required value = 5 = 5
x1 (t ) = –2x1(t) + 3u(t)
1 s 1.5
[sI – A]–1 = KVL in loop 1,
(s + 4s + 6) 4 s + 4
2
2s di
1 2i 1 = 2i + 0.5 +V
[sI – A]–1 B = dt
s 2 + 4s + 6 8
di
1 2s = –2V – 4i + 4i1 ...(i)
C[sI – A]–1 B = [1.5 0.625] dt
2 8
s + 4s + 6 KCL at node (a),
3s + 5
T(s) = dV V i2
s 2 + 4s + 6 i = 0.25 +
dt 1
36. (c) dv
= –4V + 4i + 4i2 ...(ii)
X(t) = Ax(t) + Bu(t) dt
y(t) = Cx(t) d v 4 4 v 0 4 i1
= +
0 dt i 2 4 i 4 0 i2
B= 0
1
156 Electronics Engineering Control Systems
Answers
EE State Space Analysis
1. (a) 2. (b) 3. (c) 4. (a) 5. (a) 6. (–1, –2, –3) 7. (a) 8. (c)
9. (b) 10. (b) 11. (a) 12. (a) 13. (a) 14. (a) 15. (c) 16. (b)
17. (a) 18. (d) 19. (a) 20. (c) 21. (b) 22. (c) 23. (d) 24. (a)
25. (a) 26. (c) 27. (a) 28. (b) 29. (a) 30. (c) 31. (d) 32. (1.284)
33. (a)
Solutions
EE State Space Analysis
1. (a) e ae + bf
[B] = , [ AB] =
T.F. = C[sI – A]–1 B + D f ce + df
x1 a b x1 ( t ) e e = f and a + b = c + d
Let, = + u(t ) e ae + bf
x2 c d x2 (t ) f
QC = B AB = =0
f ce + df
Uncontrollable.
GATE Previous Years Solved Paper 157
s 1 0 e 2t
= [4 0]
sI A = 0 s 1 =0 e 4t
6 11 s + 6 Hence, y(t) = 4e2t
s3 + 6s2 + 11s + 6 = 0
10. (b)
eigen values are s = –1, –2, –3.
1 2
7. (a) QC = =0
0 0
1
s+3 1 Uncontrollable
[sI – A]–1 =
0 s+2 Characteristic equation:
1 1 sI A =0
s+3 (s + 2) (s + 3)
= s 2 3
1 =0
0 0 s 5
(s + 2)
s2 – 7s + 13 = 0
158 Electronics Engineering Control Systems
e 2t
0 Characteristic equation sI A =0
(t) = t
0 e s 2
2 s =0
Initial conditions,
2 s2 – 4 = 0
x(0) = Roots of the characteristic equation are
3
–2 and +2.
Zero input response is given by
x(t) = (t) x(0) 14. (a)
e 2t
0 2 2e 2t 0 1 1
= x(t ) = x (t ) + V (t ) ...(i)
t 3 t 0 3 0
0 e 3e
State of the system at t = 1 s, x(t ) = Ax(t) + Bu(t) ...(ii)
Comparing equation (i) and (ii), we get
2e 2 0.271
x(t ) t = 1 = = A = system matrix
3e 1 1.100
0 1 1
= and B =
0 3 0
12. (a)
d s 0 0 1 s 1
Let, x1 = and x2 = [sI – A] = =
dt 0 s 0 3 0 s+3
x2 = x 1 s+3 1
0 s
d2 Bd k2 k [sI – A]–1 =
+ + = Va s(s + 3) 0 x ( 1)
dt 2 J dt LJ LJ
1 1
d2 Bd k2 k s s(s + 3)
= + Va
dt 2 J dt LJ = 1
0
2 s+3
B k k
x1 = x1 x2 + Va
J LJ LJ 1 1 1 1
x2 = x 1 s 3 s s+3
[sI – A]–1 =
1
0
x1 x1 s+3
= P + QVa
x2 x2 State transition matrix
where, = L –1 [(sI – A)–1]
B k2 k
1
1
(1 e 3t
)
P= J LJ and Q = LJ (t) = 3
3t
1 0 0 0 e
GATE Previous Years Solved Paper 159
1 3t x3 = x1 + 2 x 2 4x3 + u(t )
1 (1 e ) 1
= 3
3t 3 x1 = x 2
0 e
x2 = x 3
3t 3t
1+1 e e
= = x3 = x1 + 2 x 2 4x3 + u(t )
3t 3t
3e 3e
ZSR (Zero State Response) x1 0 1 0 x1 0
= L –1[(sI – A)–1 BU(s)] x2 = 0 0 1 x2 + 0 u(t )
x3 1 2 4 x3 1
1 1
1 s s(s + 3) 1 1
= L 0 1 0
1 0 s
0 So, A = 0 0 1
s+3
1 2 4
2 t
1 1/ s
= L = 17. (a)
0 0
Any state equation represents the dynamical
State transition equation,
behaviour of the given network. State equations
e 3t t usually follow a sepcific ‘format’ while being
= ZIR + ZSR = +
3 e 3t 0 represented. On the left side of each state
equation, the derivative of only one variable is
t e 3t used. On the right hand side a mathematical
=
3 e 3t function is represented involving any or all the
state variables and the sources.
16. (b)
3 0.2 H I1 + I2 5 I2
Y (s) 3(s 2) + –
H(s) = = 3 + V – I1
U ( s ) s + 4s 2 2 s + 1 x
V –
Y ( s ) X1 ( s ) 1 I 0.5 H II + 0.2Vx
= 3(s 2) 3 2
X1 ( s ) U ( s ) s + 4s 2 s + 1
X1 ( s ) 1
Let, = 3 2
U(s) s + 4s 2 s + 1 Using KVL in Loop-I,
3 2
s x1(s) + 4s x1(s) – 2sx1(s) + x1(s) = u(s) dI 1
V 3( I1 + I 2 ) Vx 0.5 =0 ...(i)
d dt
Replacing ‘s’ by ,
dt Using KVL in Loop-II,
3 2
d x1 d x dx1 dI1
2
+ 4 21 2 + x1 = u(t ) ...(i) 0.5 5 I 2 + 0.2Vx = 0 ...(ii)
dt dt dt dt
dx1 Eliminating I2 from equation (i) and (ii), we get
Let, = x 2 = x1
dt
dI1 5
= 1.4 Vx 3.75 I1 + V
d 2 x1 dt 4
= x2 = x3
dt
160 Electronics Engineering Control Systems
18. (d) x1 ( t ) 3 1 x 1 (t ) 2
= + u(t )
x = Ax + Bu and y = Cx x2 (t ) 0 2 x 2 (t ) 1
where, x = AX + BU
0 1 0 3 1 2
A= ,B= , C = [1 0] and D = 0 So, A= ,B=
0 2 1 0 2 1
s 0 0 1 s 1 y(t) = x1(t)
[sI – A] = =
0 s 0 2 0 s+2 x1 ( t )
y(t) = [1 0]
1 s+2 1 x2 (t )
[sI – A]–1 =
s (s + 2) 0 s y = CX + DU
Transfer function, So, C = [1 0] and D = 0
= C[sI – A]–1 B + D s 0 3 1
[sI – A] =
s+2 1 0 0 s 0 2
0 s 1 s+3 1
= [1 0]
s(s + 2) =
0 s+2
1
s+2 1
s
1
= [1 0] = 0 s+3
s(s + 2) s(s + 2) [sI – A]–1 =
(s + 2) (s + 3)
1 s+2 1
G(s) =
s(s + 2) 0 s+3 2
= [1 0] +0
and H(s) = 1 (s + 2) ( s + 3) 1
r(t) = u(t)
2(s + 2) + 1
1
R(s) = s+3
s = [1 0]
(s + 2) ( s + 3)
R(s) 1/ s
Error = E(s) = = 2s + 5 2s + 5
1 + G(s) H (s) 1 + 1 = =
s(s + 2) (s + 2) (s + 3) s2 + 5s + 6
s+2
E(s) = 21. (b)
s(s + 2) + 1
Steady-state error, using final value theorem, s+2 1
0 s+3
ess = lim sE(s) [sI – A]–1 =
s 0 (s + 2) (s + 3)
s(s + 2)
= lim =0 1 1
s 0 s(s + 2) + 1
s+3 (s + 2) (s + 3)
=
20. (c) 1
0
Selecting x1(t) and x2(t) as state variables, s+2
dx1 (t ) 1 1 1
x1 (t ) = = 3x1 (t ) + x2 (t ) + 2 u(t )
dt s+3 s+2 s+3
dx2 (t ) =
1
x2 = = 2 x2 (t ) + u(t ) 0
dt s+2
GATE Previous Years Solved Paper 161
25. (a)
et 0
s 0 2 0 L –1[sI – A]–1 = t
[sI – A] = te et
0 s 0 1
et 0
s+2 0 State transition matrix =
= t et et
0 s+1
1 27. (a)
0
s+2
[sI – A]–1 = 0 1 0
1 , B= , C = [1 0]
0 Given, A=
s+1 1 1 1
5 2 1 0 1
A ; B and C = [1 0] Qc =
2 1 1 1 3
Qc = –1 0 ...(Controllable)
C 1 0
O = Also, for observability,
CA 5 2
Q0 = [RT PTRT]
Rank (O) = 2 observable
1 0 0 0
1 3 [PT RT] = =
C [ B AB] = 1 3 1 3
1 3
0 0
Rank (C) 2 non-controllable Q0 =
1 3
2. u2 (Input) and y1 (Output):
Q0 = (0 × –3 – 0 × 1) = 0
5 2 0 ...(Non-observable
A ; B and C [1 1]
2 1 1 Since, Qc 0 and Q0 = 0
System is controllable but not observable.
1 0
O Rank (O) = 2 observable
5 2 31. (d)
0 2 1 2 1
C Given, X = 2 0 X+ 2 u
1 1
and Y = [1 0] X
Rank (C) = 2 non-controllable
Transfer function = C[sI – A]–1 B + D
29. (a) s 2
2 2
x = Ax s s 4 s s 4
[sI – A]–1 =
Eigen values are 2 s 1
1 and 2.
We can write, s2 s 4 s2 s 4
e 1t 0 s+4
(t) = 2
2t
s s 4
0 e (sI – A)–1 × B = s 1
Response due to initial conditions, s2 s 4
x(t) = (t) x(0)
Y (s)
= C[sI – A]–1 × B
e 1t 0 U (s)
x(t) = = e 1t
0 e 2t 0 s+4
= 2
s s 4
164 Electronics Engineering Control Systems
Analog Electronics
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
2k
[EC-1987 : 2 Marks] –
Vout
+
Q.2 The op-amp shown in figure below is ideal, Vin
(a) a half wave rectified sine wave. Q.10 For the ideal op-amp circuit of figure. Determine
(b) a full wave rectified sine wave. the output voltage Vo .
(c) a triangular wave.
(d) a square wave. 100 99
[EC-1990 : 2 Marks]
–
Q.7 An op-amp has an offset voltage of 1 mV and is 10 +
0
ideal in all other respects. If this op-amp is used
4V 0 Vo
in the circuit shown in figure. The output voltage 10
will be (select the nearest value).
1k
[EC-1993 : 2 Marks]
1k
– Q.11 The frequency compensation is used in op-amps
Vo
+ to increase its ______ .
[EC-1994 : 1 Mark]
[EC-1995 : 1 Mark]
(a) a half wave rectifier
Q.13 An op-amp is used as a zero-crossing detector.
(b) a differentiator
If maximum output available from the op-amp
(c) a logarithmic amplifier
is ±12 Vp-p and the slew rate of the op-amp is
(d) an exponential amplifier 12 V/µ sec then the maximum frequency of the
[EC-1992 : 2 Marks] input signal that can be applied without causing
Q.9 Assume that the operational amplifier in figure a reduction in the P – P output is
is ideal the current I through the 1 k resistor is [EC-1995 : 1 Mark]
______ . Q.14 The circuit shown in the figure is that of
2k
Vin –
Vo
1k +
–
+ 1k
2 mA
2k R1
R2
[EC-1992 : 2 Marks]
GATE Previous Years Solved Paper 3
R
4 Electronics Engineering Analog Electronics
1 1
10 k (c) (d)
Vs – 100 6 12
1 –
Vs = 10 cos(100t) + 2 3
+
[EC-2003 : 1 Mark]
Vo
5k R1 R1
Vs
1k
2V –
Vo –
3V + R2
1k +
8k
R2
iL RL
(a) 1 V (b) 6 V
(c) 14 V (d) 17 V
[EC-2003 : 2 Marks] vs vs
(a) (b)
R2 R2
Q.31 Three identical amplifiers with each one having
vs vs
a voltage gain of 50, input resistance of 1 k (c) (d)
RL R1
and output resistance of 250 , are cascaded.
The open-circuit voltage gain of the combined [EC-2004 : 2 Marks]
amplifier is Q.35 The input resistance Ri of the amplifier shown
(a) 49 dB (b) 51 dB in the figure is
(c) 98 dB (d) 102 dB
30 k
[EC-2003 : 2 Marks]
1M
(a) low-pass filter
(b) high-pass filter
(c) band-pass filter –
eo
+
(d) band-reject filter
[EC-2004 : 1 Mark] 1M
(a) Bias current of the inverting input only. Q.39 For the op-amp circuit shown in the figure, Vo is
(b) Bias current of the inverting and non- 2k
inverting inputs only.
(c) Input offset current only. 1k
–
(d) Both the bias currents and the input offset 1V Vo
+
current.
1k
[EC-2005 : 2 Marks] 1k
Q.38 For the circuit shown in the following figure, (c) V02 = V01 ln 2 (d) V01 – V02 = VT ln2
the capacitor C is initially uncharged. At t = 0, [EC-2007 : 2 Marks]
the switch S is closed. The voltage VC across the Linked Answer Questions (41 and 42):
capacitor at t = 1 millisecond is
Consider the op-amp circuit shown in the figure.
S R1
C = 1 µF
– +
VC R1
1k –
– Vi Vo
+
+ R C
10 V
and 0
+
(c) – and 0 (d)
2
1.4 k 5V
[EC-2007 : 2 Marks]
10 R2
(a)
C R1 +5 V +
+ – Output
VI Input
–10 –5 0 + –
–
–5 V
Vo
(a) low-pass filter (b) band-pass filter Q.51 In the circuit shown below the op-amps are
ideal. Then Vout (in Volts) is
(c) band-stop filter (d) high-pass filter
[EC-2011 : 1 Mark]
GATE Previous Years Solved Paper 9
VCC
C
RC RC
10 nF
1k
Vi – Vo
R1 Vo + –
+
+
Vi
[EC-2014 : 1 Mark]
–
Q.53 In the voltage regulator circuit shown in the
figure, the op-amp is ideal. The BJT has
RE Io
VBE = 0.7 V and = 100, and the Zener voltage is
4.7 V. For a regulated output of 9 V, the value of
R (in ) is _______ . –VE
[EC-2014 : 2 Marks]
10 Electronics Engineering Analog Electronics
2R R 1k
5V –
1k Vo
A
B +
5 5 SW
1k
(a) V1 3V2 (b) 2 V1 V2
2 2 1k
1V
3 7 11
(c) V1 + V2 (d) 3V1 + V2
2 2 2
[EC-2015 : 1 Mark]
[EC-2014 : 2 Marks]
Q.60 In the bistable circuit shown, the ideal op-amp
Q.57 The circuit shown represents
has saturation levels of ±5 V. The value of R1
C2 +12 V
(in k ) that gives a hysteresis width of 500 mV
vi –
vo is ______ .
R2 +
–12 V R2 = 20 k
R1
–2 V
C1 R1
+
Vo
(a) a bandpass filter Vi
–
(b) a voltage controlled oscillator
(c) an amplitude modulator
(d) a monostable multivibrator [EC-2015 : 1 Mark]
[EC-2014 : 1 Mark]
Q.61 For the voltage regulator circuit shown, the input
Q.58 In the circuit shown, assume that the op-amp is voltage (Vin) is 20 V ± 20% and the regulated
ideal. The bridge output voltage Vo (in mV) for output voltage (Vout) is 10 V. Assume the op-amp
= 0.05 is ______ . to be ideal. For a load RL drawing 200 mA, the
maximum power dissipation in Q1 (in Watts) is
1V
100 + _______ .
–
250(1 + ) 250(1 – )
Vi Q1 Vo
– +
Vo 4V
Vref + R1 RL
250(1 – ) 250(1 + ) –
100
50
R2 = 10 k
[EC-2015 : 2 Marks]
[EC-2015 : 2 Marks]
GATE Previous Years Solved Paper 11
Q.62 Assuming that the op-amp in the circuit shown The load current Io through RL is
below is deal, the output voltage Vo (in Volts) is + 1 Vref
(a) I o =
______ . R
2k
Vref
(b) I o =
+12 V +1 R
1k
– + 1 Vref
Vo (c) I o =
+ 2R
1V –12 V Vref
(d) I o =
+ 1 2R
[EC-2015 : 2 Marks]
[EC-2016 : 1 Mark]
Q.63 In the circuit shown using an ideal op-amp, the
3-dB cut-off frequency (in Hz) is _____ . Q.66 The following signal Vi of peak voltage 8 V
applied to the non-inverting terminal of an ideal
vi +
10 k 10 k vo op-amp. The transistor has VBE = 0.7 V, = 100,
–
0.1 µF VLED = 1.5 V, VCC = 10 V and –VCC = –10 V.
10 k 10 k
10 V 10 V
100
[EC-2015 : 1 Mark] 8k
(in k ) is ______ . + 15 k
2k Vi
10 k 10 k –VCC
10 k Vi
Vin –
Vo
+ 6V
4V
2V
[EC-2015 : 2 Marks] t
–2 V
Q.65 Consider the constant current source shown in
–4 V
the figure below. Let represent the current gain
–6 V
of the transistor.
+V CC The number of times the LED glows is _____ .
[EC-2016 : 1 Mark]
R
Vref Q.67 An ideal op-amp has voltage sources, V1, V3,
V5, ..... VN – 1 connected to the non-inverting input
–
and V2, V4, V6, ....., VN connected to the inverting
+ R2 input as shown in the figure below
(+VCC = 15 Volt, –VCC = –15 Volt). The voltages
R1 RL V1, V2, V3, V4, V5, V6, .... are 1, –1/2, 1/3, –1/4,
1/5, –1/6, .... Volt, respectively. As N approaches
infinity, the output voltage (in Volt) is _____ .
12 Electronics Engineering Analog Electronics
10 k
The time t = t1 (in seconds) at which Vo changes
V2 state is ______ .
10 k 10 k
V4 [EC-2016 : 2 Marks]
10 k +VCC
VN –
Q.70 An op-amp has a finite open-loop voltage gain
1k Vo of 100. Its input offset voltage Vios (= +5 mV) is
V1 +
–VCC modeled as shown in the circuit below. The
1k
V3 amplifier is ideal in all other respects. Vinput is
1k 10 k 25 mV.
VN – 1
1k 15 k
[EC-2016 : 2 Marks]
–
Q.68 A p-i-n photodiode of responsivity 0.8 A/W is +
connected to the inverting input of an ideal Ao = 100
V ios = 5 mV
op-amp as shown in the figure, +VCC = 15 V,
–VCC = –15 V, Load resistor RL = 10 k . If 10 µW
V input
of power is incident on the photodiode, then
the value of the photocurrent (in µA) through
the load is ______ . The output voltage (in millivolts) is ______ .
[EC-2016 : 2 Marks]
1M
Q.71 For the circuit shown in the figure, R1 = R2 =
R3 = 1 , L = 1 µH and C = 1 µF. If the input
+VCC
Vin = cos(106 t), then the overall voltage gain
–
Vo (Vout/Vin) of the circuit is ______ .
+
R1
–VCC 10 k R3
1M
L
–
+VCC –
+ R2 C Vout
[EC-2016 : 2 Marks] +
Vin
Q.69 In the op-amp circuit shown, the Zener diode
Z1 and Z2 clamp the output voltage Vo to +5 V or
–5 V. The switch ‘S’ is initially closed and is [EC-2016 : 2 Marks]
opened at time t = 0.
Q.72 For the operational amplifier circuit shown, the
+10 V output saturation voltages are ±15 V. The upper
and lower threshold voltages for the circuit are,
S
10 µ F respectively
t=0 +10 V
+ –
– 470 Vout
Vo Vin +
+ – 10 k
Z1
–10 V
10 k 5k
4k
1k Z2
3V
–10 V
0V 0V
GATE Previous Years Solved Paper 13
(a) +5 V and –5 V (b) +7 V and –3 V Q.75 In the circuit shown below, the op-amp is ideal
(c) +3 V and –7 V (d) +3 V and –3 V and Zener voltage of the diode is 2.5 Volts. At
[EC-2017 : 1 Mark] the input, unit step voltage is applied i.e.
VIN(t) = u(t) Volts. Also at t = 0, the voltage across
Q.73 The amplifier circuit shown in the figure is each of the capacitors is zero.
implemented using a compensated operational
1 µF
amplifier (op-amp), and has an open-loop
voltage gain, A0 = 105 V/V and an open-loop
1k 1 µF
cut-off frequency, fc = 8 Hz. The voltage gain of 1V –
the amplifier at 15 kHz, (in V/V), is _____ . vIN(t )
0V + vOUT(t)
t=0
R2 = 79 k
R2 = 1 k
The time t, in milliseconds, at which the output
– voltage vOUT crosses –10 V is
Vo
+ (a) 2.5 (b) 5
IS is the saturation current. Assume that the In the above circuit, assume the op-amp to be
voltage VP shown in the figure is 0.7 V and the ideal. The voltage (in volts correct to one decimal
thermal voltage VT = 26 mV. place) at node A, connected to the negative input
of the op-amp as indicated in the figure is ___ .
[EC-2018 : 2 Marks]
20 k
20 k +15 V
– Q.77 In the circuit shown below, all the components
+
V out are ideal. If Vi is +2 V, the current Io sourced by
–15 V the op-amp is ______ mA.
5k
1k
VP
+15 V
1k
Q1 Q2 Q3 Q32 – Io
Vi +
1k
–15 V
The output voltage Vout (in Volts) is _____ .
[EC-2017 : 2 Marks] [EC-2020 : 1 Mark]
14 Electronics Engineering Analog Electronics
Q.78 The components in the circuit shown below are If Vout = 1 Volt for Vin = 0.1 Volt and Vout = 6 Volt
ideal. If the op-amp is in positive feedback and for Vin = 1 Volt, where Vout is measured across
the input voltage Vi is a sine wave of amplitude RL connected at the output of this op-amp, the
1 V, the output voltage Vo is value of RF/Rin is
1k (a) 3.285 (b) 3.825
(c) 5.555 (d) 2.860
1V 1k +5 V [EC-2021 : 1 Mark]
0 Vi –
–1 V Vo
+ Q.81 Consider the circuit with an ideal op-amp
–5 V shown in the figure.
R RF
(a) a square wave of 5 V amplitude.
(b) a inverted sine wave of 1 V amplitude.
R
(c) a non-inverted sine wave of 2 V amplitude.
+VCC
(d) a constant of either +5 or –5 V. Vin
Vref Vout
[EC-2020 : 1 Mark]
_______ . 12
9
R
6
VC +15 V 3
– +
0
C 1 2 3 4 log10( )
–12 V
(a) R = 3 k , C = 1 µF
R R R R (b) R = 1 k , C = 3 µF
(c) R = 4 k , C = 1 µF
(d) R = 3 k , C = 2 µF
D D
[EC-2022]
ID D
Q.85 Consider the circuit shown with an ideal
op-amp. The output voltage Vo is ______ V.
+ VD –
(Rounded off to two decimal places)
3R
20
ID(mA)
+15 V
10 R R R 2R
0 +
(V) 2R 2R 2R 2R 2R Vo
0 VD –15 V –
2R
R
–
0 0.5 1 2 3 t(sec)
–2 +
R
2 + sin100t
– R
Vo
Vi + VA D1 3
C D2 (a) sin 100t (b) 3 sin100t
2
(c) 2 sin100t (d) none of these
[EE-1996 : 1 Mark]
[EE-1992 : 2 Marks]
Q.7 A major advantage of active filters is that they
Q.3 Given figure, shows a non-inverting op-amp
can be realized without using
summer with V1 = 2 V and V2 = –1 V the output
voltage Vo = _______ . (a) op-amps (b) inductors
(c) resistors (d) capacitors
2R [EE-1997 : 1 Mark]
R
V
–
V
Vo Q.8 Match the following:
2V +
R Circuits:
–1 V VCC
R
R
[EE-1994 : 1 Mark] –
A. Vo
+
Q.4 The common mode voltage of a unity gain Vi
R
(voltage follower) op-amp buffer in terms of its
output voltage V is ______ .
[EE-1995 : 1 Mark]
R R
R
Vi –
Vo
+
–
Vo
C. +
Vi
(a) x/2 (b) –x
(c) 2x (d) –2x
[EE-1996 : 1 Mark]
GATE Previous Years Solved Paper 17
1k
+5 V
(a) –1 (b) –20
–
Vo (c) –100 (d) –120
a + Va = 0
1 mA [EE-2003-04 : 2 Marks]
–5 V
[EE-2000 : 1 Mark]
t
t
R +V
–
+ (a)
+
–V
Vi
RL Vo
R
(b)
Vo
(a)
t
Vo 12 V
(c)
–0.7 V
(b) t
Vo
(d) 0.7 V
(c) –12 V
t
[EE-2006 : 1 Mark]
GATE Previous Years Solved Paper 19
Q.18 A relaxation oscillator is made using op-amp Q.19 The circuit shown in the figure is
as shown in figure. The supply voltages of the
op-amp are ±12 V. The voltage waveform at point R1
P will be +
+ R2 –
V Load
R1 –
R2 r
C
– rV
+
(a) a voltage source with voltage
R1 R2
2k
P r R2
(b) a voltage source with voltage V
R1
10 k 10 k
r R2 V
(c) a current source with current
R1 + R2 r
R2 V
(d) a current source with current
R1 + R2 r
[EE-2007 : 1 Mark]
6
(a) Q.20 The switch ‘S’ in the circuit of the figure is
initially closed, it is opened at time, t = 0. You
–10
may neglect the Zener diode forward voltage
drops. What is the behaviour of Vout for t > 0?
10 +10 V
+10 V
1k
(b)
–
6 Vo
+
S +10 k 5.0 V
0.01 µF
–10 V
100 k 5.0 V
6
(c) –10 V
Q.21 The block diagrams of two of half wave rectifiers Statement for Linked Answer Questions (22 and 23):
are shown in the figure with the transfer A general filter circuit is shown in the figure:
characteristics of the rectifiers.
R2
It is desired to make full wave rectifier using
above two half-wave rectifiers. The resultant
circuit will be
R1 C
P Q
Vi –
Vo Vo VA Vo
Vin Vo Vin Vo +
Vin
0 R3
Vin
0 R4
Gain
Q R
(c) Vi –
Vo
+ (a)
P R
R
R R Gain
– (b)
P R Vo
(d) Vi +
Q R
[EE-2008 : 2 Marks]
GATE Previous Years Solved Paper 21
3
2
(c) current-current feedback 1
t4 t5 t6
(b) voltage-voltage feedback V0
t1 t2 t3
t
–1
(c) current-voltage feedback
–2
(d) voltage-current feedback –3
[EE-2009 : 1 Mark]
1k 6V
Q.25 The following circuit has R = 10 k , C = 10 µF. Vi –
Vo
The input voltage is a sinusoid at 50 Hz with +
2k
an rms value of 10 V. Under ideal conditions, –3 V
the current is from the source is
1k
R
10 k
is
– Vo
op-amp
6
Vs(rms) = 10 V, +
50 Hz
10 k (a)
t3 t6
R 0 t
C 10 µF
–3
22 Electronics Engineering Analog Electronics
Vo
R +12 V
– +12 V
6 Vi –
+
R –12 V +
(c) R –12 V
Vo
t6
0 t
t2 t4
R R
–3
Vo
Vo
+12 V
6
+6 V
(d) (a) Vi
–6 V
0 t
t2 t4 t6
–3
–12 V
[EE-2009 : 2 Marks]
Vo
Q.28 Given that the op-amp is ideal, the output voltage
Vo is +12 V
2R
+6 V
(b) Vi
–6 V
+10 V
R
–
Vout –12 V
+
–10 V
+2 V
Vo
+12 V
(a) 4 V (b) 6 V
(c) 7.5 V (d) 12.12 V
[EE-2010 : 1 Mark] (c) Vi
–6 V +6 V
Q.29 A low-pass filter with a cut-off frequency of 30 Hz
is cascaded with a high-pass filter with a cut-off
frequency of 20 Hz. The resultant system of –12 V
2V
+15 V
– +15 V
(d) Vi –
–6 V +6 V +
+ Vout
–15 V
1k –15 V
–12 V +1 V
1k
1k
[EE-2011 : 1 Mark]
Q
+VCC
1k +15 V 1k
– Vi +
V out Vo
+ –
5V 1 µF
–15 V
–VCC
[EE-2014 : 1 Mark]
–30
(a)
–1
vi
Vo ( )
20 log /2
Vi ( )
/4
0 10 10
3
0 10 vo
(d) 1 10
2
1 10
2
10
3
–10 – /4
–20 – /2
(b)
–30
–1
vi
[EE-2014 : 2 Marks]
R +Vsat
+Vsat –
vi – + vo vo
+ –Vsat
–Vsat vi
(d)
R2 –1
R1
[EE-2014 : 2 Marks]
GATE Previous Years Solved Paper 25
C R
[EE-2015 : 1 Mark]
–
vi = Vo 0
+ v o = Vo Q.41 The filters F1 and F2 having characteristics as
C shown in Fig. (a) and (b) are connected as shown
R
in Fig. (c).
F1
(a) 0 (b) Vo/Vi
Vi Vo
(c) (d)
2 2
f1
[EE-2015 : 1 Mark] f
1k 9
+10 V 1 VCC
0.25 µF V3 –
– Vout
Vo 1
+ V2 +
2k –VSS
4
–10 V
V1
2k
(a) 1.8V1 + 7.2V2 – V3
(b) 2V1 + 8V2 – 9V3
(c) 7.2V1 + 1.8V2 – V3
(a) square wave of period 0.55 ms (d) 8V1 + 2V2 – 9V3 [EE-2016 : 2 Marks]
(b) triangular wave of period 0.55 ms
Q.46 The approximate transfer characteristic for the
(c) square wave of period 0.25 ms circuit shown below with an ideal operational
(d) triangular wave of period 0.25 ms amplifier and diode will be
[EE-2015 : 2 Marks] VSS
Vin +
Q.43 Of the four characteristics given below, which
are the major requirements for an –
D
instrumentation amplifier? –V SS
Vo
P. High common mode rejection ratio
R
Q. High input impedance
R. High linearity
S. High output impedance Vo
(a) P, Q and R only (b) P and R only
(c) P, Q and S only (d) Q, R and S only
(a)
[EE-2015 : 1 Mark]
Vin
Q.44 The circuit shown below is an example of a
Vo
R2
(b)
C
Vin
R1 +15 V
Vi + Vo
Vo
–
–15 V (c)
Vin
(a) low pass filter (b) band pass filter
Vo
(c) high pass filter (d) notch filter
[EE-2016 : 1 Mark]
(d)
Q.45 For the circuit shown below, taking the op-amps
Vin
as ideal, the output voltage Vout in terms of the
input voltages V1, V2 and V3 is [EE-2017 : 2 Marks]
GATE Previous Years Solved Paper 27
R1
R2
28 Electronics Engineering Analog Electronics
Answers
EC O perational Amplifiers
9. (–4) 10. (0.02) 11. (Sol.) 12. (33) 13. (159) 14. (d) 15. (d) 16. (d)
17. (a) 18. (d) 19. (c) 20. (a) 21. (b) 22. (c) 23. (a) 24. (b)
25. (a) 26. (b) 27. (c) 28. (b) 29. (c) 30. (b) 31. (c) 32. (b)
33. (a) 34. (a) 35. (b) 36. (c) 37. (a) 38. (c) 39. (c) 40. (d)
41. (a) 42. (c) 43. (b) 44. (b) 45. (d) 46. (a) 47. (b) 48. (d)
49. (b) 50. (b) 51. (c) 52. (3.18) 53. (1093.02) 54. (c) 55. (b) 56. (d)
57. (d) 58. (250) 59. (1.5) 60. (1) 61. (2.8056) 62. (12) 63. (159.15) 64. (1)
65. (b) 66. (3) 67. (15) 68. (800) 69. (0.798) 70. (413.79) 71. (–1) 72. (b)
73. (44.4) 74. (1.145) 75. (c) 76. (0.5) 77. (6) 78. (d) 79. (b) 80. (c)
Solutions
EC O perational Amplifiers
1. Sol. A+ A
By voltage divider rule: Ad =
2
R 100 ( 100)
V– = 2 =1V = 100
R+R =
2
R Q CMRR = 60 dB = 103
V+ = 2 =1V
R+R
Ad
So, Vd = V + – V– = 1 – 1 = 0 V So, = 10 3
Ac
V+ +V 1+1
Vc = = =1V Ad 1
2 2 Ac = =
3 10
R f 100 k 10
A– = = = 100
R1 k Now, Vo = Ac Vc + Ad vd
Rf 100 1
A+ = 1+ × Vo = Ac Vc = × 1 = 100 mV
R1 100 + 1 10
100 k 100
= 1+ = 100
1 101
GATE Previous Years Solved Paper 29
R2
Vo = Gain (Vin)
Vin = Voffset voltage = 1 mV
D1 Rf 1k
R1 Gain = 1 + = 1+ =2
R1 1k
Vi –
Vo Vo = 2 × 1 × 103 = 2 mV
+ D2
30 Electronics Engineering Analog Electronics
Vd Vin R
Va = V+
= ln R + 15
VT RI o
Vo = –Vd Rf
A+ = 1 +
R1
Vin
Vo = VT ln Rf
RI o Vo Vo
= 1+ =
Va R1 R
V+
9. Sol. R + 15
2k Vo 22 R
= 1+ ×
V+ 10 R + 15
R
– I A+ = 3.2
Vo R + 15
+ 1k
2 mA 3.2 R
2k
= 2.2
R + 15
3.2 R = 2.2R + 33
Vo = –2 × 10–3 × 2 × 103 R = 33 k
= –4 V
Apply KCL at output node, 13. Sol.
Vo 4 S.R.
I + 2 mA = = = 2 mA fmax =
2k 4k 2 vo
I = –4 mA 12 1
fmax = 6
× = 159 kHz
10 2 × 12
10. Sol.
Rf 14. (d)
99
Vo = Vin = ×4
R1 100 The given figure has positive feedback and an
= –0.99 × 4 = –3.96 input at inverting terminal, so the given figure
is Schmitt trigger.
100
Vx = 4 × =2V
100 + 100 15. (d)
Rf 99 Rf
Vo+ = 1+ Vx = 1 + ×2 Vin
R1 100 Vo =
R1
= 1.99 × 2 = 3.98
10 k
= ×2 V = 4 V
Vo = Vo+ + Vo = 3.98 – 3.96 = 0.02 V 5k
GATE Previous Years Solved Paper 31
10 k Vo C C
Vx = Vo × = Here, Vo = V1 sin t V2 sin t
10 k + 100 k 11 C C
Rf = –(V1 + V2) sin t
Vo+ = 1+ Vx
R1 20. (a)
10 k Vo 3Vo This circuit acts as a differentiator and
= 1+ = differentiation of triangular wave gives square
5k 11 11
wave,
Apply superposition principle,
R
Vo = Vo+ + Vo Vo = Vi = sCRVi
1 / sC
3Vo dVi d
Vo = 4 Vo = RC s=
11 dt dt
3 Vo
Vo = –4
11 21. (b)
Vo = –5.5 V
16. (d) –
Vo
When one input terminal of high gain Vi +
Vi
Vo = Vio A
= 5 mV × 10,000
= 50 V
t
But, Vo = ± 15 V
Vo can never be greater than ±Vsat.
Vo 24. (b)
If open-loop gain is not infinite then,
t 1 Rf 10 k
= = = 10
R1 1k
18. (d) 1
=
10
In positive feedback op-amp act in saturation
region ±Vsat. Here applied voltage is positive, A 100 100
Af = = =
Vo = +Vsat = +15 V 1+ A 1 11
1 + 100 ×
10
19. (c)
Af –9
Rf
Vo = Vin
R1
32 Electronics Engineering Analog Electronics
25. (a) SR
Vm =
10 mH
A 2 fm
10 µF
1
10 = 6
Vs 100 10 × 100 × 2 × 20 × 10 3
–
1 – Vm = 79.5 mV
Vs = 10 cos(100t) + 2 3
+ Vo
28. (b)
V
KCL at node 1,
4V
V2 L
=
Vs R 2V
t
3
100 × 10 × 10 1 /6 5 /6 2
= =
10 10
–4 V
Vs
V2 = = cos 100t
10
Vp - p = 8 V
Vo 1/ C So, Vi = 4 sin t
V2 = 100 At, Vi = 2
1 1
= 6
= 10 sin t = t=
100 × 10 × 10 × 100 2 6
Vo = –10 V2 5
Another crossover at, =
= –10(–cos100t) 6 6
Vo = 10 cos100t 4
5
Ton 6 6 6 1
26. (b) Duty cycle = = = =
T 2 2 3
20 log x = 20 dB
x = 10 29. (c)
Gain × B.W. = 1 × 106 CMRR = 20 log Ad – 20 log Ac
1 × 106 = 48 dB – 2 dB = 46 dB
B.W. =
Gain 30. (b)
6
10 Rf Rf 8
= = 100 k = 10 5 Vo = ×2 + 1+ ×3
10 R1 R1 9
27. (c) 8
= 5× 2 + 6× =6V
3
Slew rate = A 2 f Vm
V = AVm sin t 31. (c)
dV 250 V2 250 V3 250
= AVm cos t
dt
+ + +
dV V1 1k – 50V1 1k – 50V2 1k – 50V3 V4
= SR = AVm 2 fm
dt max
20 log x = 40 V4
x = 100 = A Av =
V1
GATE Previous Years Solved Paper 33
V4 V3 V2 35. (b)
Av = × ×
V3 V2 V1 Connect a Vs voltage source across inverting
Voltage across 1 k after 1st stage is, terminal of op-amp.
1000 × 50 V1 30 k
V2 =
1250
V2 Ii 10 k
= 40 –
V1 VA
+
Vs
V3 Ideal operational amplifier
Similarly, = 40
V2
Ri
Av = 40 × 40 × 50 = 8 × 104
By virtual short,
Av in (dB) = 20 log(8 × 104) = 98 dB VA = 0 V
33. (a) Vs VA Vs 0 Vs
Ii = = =
10 k 10 k 10 k
Vo
At = , =0 Vs
Vi = 10 k
So, Ri =
and at = 0, Ii
Vo 36. (c)
=1
Vi
1M
– +
34. (a)
IB2
R1 R1 V2 –
Vs eo
V1 +
IB1
–
R2 VC 1M
V +
R2
iL RL V1 = –IB1 × 1 M
V2 = V1 = –IB1 × 2 M
(Due to virtual ground)
V V V Vo Drop in feedback resistor,
+ + = 1 M = IB2 × 1 M
R2 RL R2 R2
eo = V2 + IB2 × 1 M
2V V Vo eo = –IB1 × 1 M + IB2 × 1 M
+ = ...(i)
R2 RL R2 eo = (IB2 – IB1) × 1 M
Vs V V Vo where, (IB2 – IB1) is offset current.
=
R1 R1
37. (a)
Vs – 2V = –Vo ...(ii)
High pass filter,
Putting Vo from equation (i),
1
Vs + 2 V 2V V c =
RC
= + +
R2 R2 RL 1
= 3 6
V Vs V 1 × 10 × 1 × 10
iL = = = = iL = 1000 rad/sec.
RL R2 RL
34 Electronics Engineering Analog Electronics
1k I = I o ( eV /VT 1)
X –
y Vo 0 ( 1)
1V + =
100 k
1k
1k V
6 25 × 10 3 1
10 e 1 =
10 5
X = 1 Volt
y = 0.5 V (using voltage division rule) V = 0.06 V
2k 2k Vo V 1
+ y 1+ =
So, Vo = x 4k 100 k
1k 1k
= 1 × (–2) + 0.5 × (3) = –0.5 V Vo 0.06 1
=
4k 100 k
40. (d) Vo = 0.1 V
VI
Vo = VT ln 44. (b)
R1 I s
Vi Vo
2 4 =
V01 –V02 = VT ln + VT ln R1 + Ls R2
R1 I s R1 I s R2C 2 s + 1
4 Vo R2
= VT ln = VT ln 2 =
2 Vi ( R1 + Ls) ( R2C 2 s + 1)
which is equivalent to standard form of transfer
41. (a)
function of low pass filter, i.e.,
From the figure given the question,
a
R1 1/ sC R H(s) = 2
+ Vi 1+ 1 ps + qs + r
Vo = Vi R1 1 R1
+R
sC 45. (d)
Vo 1
= 1+ ×2 10 V
Vi 1 + RsC
5k I
Vo 2 (1 + RsC )
=
Vi 1 + RsC 5V
Vo 1 RsC V
= +
Vi 1 + RsC
– V BE
+
+
42. (c) 1.4 k V
5V
– –
Vo 1 RsC I
=
Vi 1 + RsC
(1 – sRC) – 1 + sCR
GATE Previous Years Solved Paper 35
10 5 48. (d)
I= = 1 mA
5 At = 0, XL = L = 0
V = 1.4 × 1 = 1.4 Volt Hence circuit can be redrawn as below,
V = V + VBE
R1
= 1.4 + 0.6 = 2 Volts
i1
46. (a) –
+
+ vo
R1 VA = 0
– –
Vo
I1 +
I2 R2
vo = 0
Vi At = , XL =
Hence, circuit can be redrawn as below,
R3
R1
i1
Assuming ideal op-amp, voltage at point A is –
zero. So, the given circuit can be considered as +
+ vo
shown below:
–
R2
v o = R1 i L
R1 Hence given circuit is a high pass filter.
–
Vo
+ 49. (b)
Vi R3
(O/P) R2 R2 sC
T(s) = = =
(I/P) 1 R1sC + 1
R1 +
Cs
R2
Av =
R1 R2
s
R1
47. (b) T(s) = 1
s+
At, VI = –10 V R1C
Vo 0 0 20 0 ( 10) It is the transfer function of high pass filter with
= +
R 4R R cut-off frequency.
Vo = –5 + 10 1
= 5V = rad/sec.
R1C
At, VI = –5 V
Vo 0 0 20 0 ( 5) 50. (b)
= +
R 4R R Due to virtual short,
Vo = –5 + 5 VC = VB = 0 V
= 0V (Collector voltage of transistor Q)
For VI > –5 V, both diodes are conducting. and given that, base voltage of transistor Q,
So, Vo = 0 V VB = 0 V
So, VC = 0 V
36 Electronics Engineering Analog Electronics
1k 1 1k 1
5 + 1+ f3-dB = = 159.15 Hz
VOA = 2 RC
1k 2 1k
1 64. Sol.
= –4 V V+ = V
2
10 k Vx 10 k
VOB
= 1.5
VOA R
10 k
60. Sol. Vin –
Vo
Vo +
L+
VTL VTH
V1 Vin 0 0 Vx
=
10 k 10 k
Vin = –Vx ...(i)
L–
38 Electronics Engineering Analog Electronics
Again apply nodal analysis at node Vx , When V1 exceeds 2 V output of op-amp V01 goes
0 Vx Vx 0 Vx Vo to VCC and drives BJT into saturation shorted
= + ...(ii)
10 k R 10 k LED will glow.
Put the value of V x from equation (i) in In the given problem Vi exceeds 2 V three times
equation (ii), we get and hence output V01 of op-amp goes to VCC
R = 1k thrice so that LED glow three times.
Node A:
VA = VCC – Vref VA V1 VA V3 V VN 1 VA
VB = VA (since virtual short) + + .... A + =0
1k 1k 1k 1k
VCC VB
IC = N
R VA + 1 = V1 + V3 + ... + VN – 1
2
VCC (VCC Vref ) Vref VB = VA (Q Virtual short)
= =
R R Node B:
IC Vref VA V2 VA V4 V VN VA Vo
Io = I E = = + + .... A + =0
1+ R 10 k 10 k 10 k 10 k
N
66. Sol. Vo = VA +1 (V2 + V4 + V6 + ... + VN )
2
10 V 10 V N (V1 + V3 + ... + VN 1)
= +1
2 N
+1
100 2
8k
–(V2 + V4 + ... + VN)
+VCC
= V1 – V2 + V3 – V4 + ...
VB – V01
1 1 1
Vi + = 1+ + + ...
15 k 2 3 4
2k
–VCC 1
= =
N
Output of op-amp goes to saturation
10 V + 2 k Vo = Vsat = VCC
VB = =2V
8k +2k = 15 V
GATE Previous Years Solved Paper 39
Io = 0.798 sec.
=
Pi
70. Sol.
Io Overall input = Vios + Vinput
0.8 A/W =
10 × 10 6 = 5 mV + 25 mV = 30 mV
Io = 8 µA
Rf
Vo = Io × 1 M 1+
R1
= 8 × 10–6 × 1 × 106 = 8 V Vo = × Overall input
1 Rf
The photo current through load RL = 10 k is 1+ 1+
AOL R1
given by
Vo 8 15 k
IL = = 1+
RL 10 × 10 3 1k
× 30 × 10 3
=
1 15 k
= 800 µA (in upward direction) 1+ 1+
100 1k
69. Sol.
= 413.79 mV
Initially switch is closed and VB = 10 V
V01 = –10 V 71. Sol.
V0 = –V2 = –5 V V01 R
H1(s) = = 1+ 1
Vo Vi sL
VA = ×1 k = –1 V
4 k +1k 1 1
= 1+ = 1+ 6
10 V sL / R1 s × 10
V0 R3 sR3C
H2(s) = = =
10 µF V01 R2Cs + 1 1 + sR2C
+10 V Cs
– 470
VB Vo Cs 1
+ V01 = =
10 k 1 + Cs 1 + 1
VA –10 V Cs
–10 V 4k H(s) = H1(s) H2(s)
1k
6
1 s × 1 × 10
= 1+ 6 6
s × 10 1 + s × 10
At t = 0;
= –1
The switch is opened and as t , VB
approaches –10 V.
40 Electronics Engineering Analog Electronics
f
fc fc 15 k
1V
I= = 1 mA
Ao 1k
• Aof = 80
1 + Ao The capacitor charges with constant current I
and both V1 and V2 will increase till V2 reaches
10 5
• f c = f c (1 + Ao ) = 8 1 + Hz = 10008 Hz 2.5 V. Thereafter, V2 = 2.5 V and V1 increases
80
with time.
• Gain at f = 15 kHz = 15000 Hz is When, vout(t) = –10 V
Aof 80 V1 = 7.5 V
Af = = 44.4 t
2
f 15000 2 1
1+ 1+ So, (1 mA) dt = 7.5 V
fc 10008 1 µF
0
103t = 7.5
t = 7.5 msec
GATE Previous Years Solved Paper 41
Vo = (1 + 1) × 2 = 4 V Rin
RF
2 4 0 4
+ Io + =0 (KCL at node Vo) V01
1k 1k V1
–2 + Io – 4 = 0 R1
Io = 6 mA Vref R2
42 Electronics Engineering Analog Electronics
Rf Rf
V02 = Vin Vout = (Vref Vin ) ...(3)
Rin R
Step-3 :
Total, V0 = V01 + V02
For, Vout = 0
Rf R2 Rf
V0 = 1+ Vref + Vin Rf
Rin R1 + R2 Rin (Vref Vin ) = 0
R
Given,
Vref –Vin = 0
Rf R2 Rf Vin = Vref ...(4)
1 = 1+ Vref (0.1)
Rin R1 + R2 Rin
82. (b, c)
...(1)
Given circuit is a high-pass filter.
Rf R2 Rf
6 = 1+ Vref (1) R2 = 2 k
Rin R1 + R2 Rin
...(2) +15 V
1 µF R1 = 1 k
Rf
(1 0.1) +
(2) – (1) 6–1 = Vin +
Rin Vo
– –15 V –
Rf 5
= = 5.555
Rin 0.9
1 1
Rf = =
c R1C1 10 3 × 10 6
= 5.555
Rin
= 1000 rad/sec
Hence, option (b) and (c) is correct.
81. (c)
83. (c)
Given: Vin << VCC ; Vref << VCC
R V2 RF
15 V
Iin IF VCmax
R Iref
+VCC t
Vin VCmin
Vref V1 Vout
–12 V
–VCC
GATE Previous Years Solved Paper 43
If, V0 = +15 V
R
D1 is ON.
R2
D2 is OFF. 1k
R 1k Vo
Vi
+15 V R3
C
C Vo
Vo Analog output,
C
Vo = –Resolution × Gain ×
–12 V
Decimal equivalent of
R R R R binary data
vr 1.6
Resolution = n
= = 0.4
2 24
12 × 2 R Decimal equivalent = 5
VC min = VLT = = 8V
2R + R Gain = 1
VCmax – VCmin = 5 – (–8) = 13 V vo = –(0.1) (5) (1)
= –0.5 V
84. (a)
20 log A
12
9
3 log10( )
44 Electronics Engineering Analog Electronics
Answers
EE O perational Amplifiers
1. (c, d) 3. (1) 5. (a) 6. (a) 7. (b) 9. (d) 10. (d) 11. (a)
12. (d) 13. (d) 14. (b) 15. (d) 16. (c) 17. (d) 18. (a) 19. (d)
20. (c) 21. (b) 22. (c) 23. (d) 24. (b) 25. (d) 26. (d) 27. (d)
28. (b) 29. (d) 30. (d) 31. (b) 32. (b) 33. (c) 34. (b) 35. (a)
36. (d) 37. (c) 38. (d) 39. (d) 40. (1.245) 41. (b) 42. (a) 43. (a)
44. (a) 45. (d) 46. (a) 47. (c) 48. (b) 49. (a)
Solutions
EE O perational Amplifiers
2. Sol. Vi(volts)
– D1
Vo t(sec)
Vi + VA 0.5 1 2
C D2 Vout
1V
Vi + Vo = 1 V R V
+ –
1V R Vo
– V +
2V
R
–1 V
There is no discharging path providing for this R
capacitor. It will remain charged with 1 V.
2 V 1 V V
– + =
Vo R R R
Vi +
+ 1
1V V = Volts
– 3
0 V V Vo
=
R 2R
Vo = 3 V = 1 Volt
GATE Previous Years Solved Paper 45
4. Sol. 9. (d)
100 k
a –
– Vo
Vo + +
Vi + Vs
b
– 1k
Here, Vi = Vo 90 k
10 k
Vcm = Va + Vb
1
= (Vi + Vo ) = Vi = Vo
2 I2 = 0, I1 = I
V+ = 10 k × I
5. (a)
V0 = (90 + 10) k × I
2R = 100 k × I
x = = 2
R V+ 10 k × I 1
= = =
R V0 100 k × I 10
x = = 1
R
10. (d)
x 1 1
= x = x
x 2 2 1k
6. (a)
–
V0
2R +
1 mA
R
–
V+ + V0
–2 V0 = –1 mA × 1 k
R = –1 V
2 + sin100t
R
11. (a)
2 V+ 2 + sin 100t V+ S.R. = Vm
+ =0
R R 65.8 V/µs = 2 f × 10
1 62.8 × 10 6
V+ = sin 100t f=
2 2 × 10
0 V+ V+ V0 = 1 MHz
=
R 2R
12. (d)
3
V0 = 3 V+ = sin 100t 1
2 Vin ×
jC Vin
8. Sol. V(+) = =
1 1 + jRC
R+
(A) (R) : There is no feedback. jC
(B) (S) : Input impedance is resistive and where, V(–) = V(+) (For ideal op-amp)
feedback is capacitive in nature.
Vin V( ) V( ) V0
(C) (P) : Input impedance is capacitive and =
feedback is resistive in nature. R1 R1
V0 = 2V(–) – Vin
= 2V(+) – Vin (V(–) = V(+))
46 Electronics Engineering Analog Electronics
2 100 k
= 1 Vin But, Vy = 1+ Vx = 11Vx
1 + j RC 10 k
1 j RC 10 Vx Vx
= Vin Ix = = 100 k
1 + j RC 1M Ix
V0 15. (d)
= 2 tan–1 RC
Vin V0 Rf
=
For –90° 90°, maximum phase shift occurs Vin R1
(±180°). If, gain = –25
13. (d) 1000 k
then, R1 = = 40 k
Using KCL at node 1 we have, 25
If, gain = –10
10 k 1 10 k 1000 k
then, R1 = = 100 k
1k
10
1k
Vi So, if we keep R1 to be 100 k then we never get
the gain –25 for any RF so we can keep R1 to be
– 40 k .
Vo
+
16. (c)
Output will be at its saturation values and it is
having a phase difference of (–180°).
V1 0 V1 V1 Vout
+ + =0 For +ve half of the input 1st diode will be on
10 1 10
making –ve terminal of op-amp to 0.7 V larger
12V1 = Vout ...(i)
than the voltage at +ve input so output will be
Also, using KCL at inverting node, we get
–Vsat.
Vin 0 0 V1 For –ve half of input reverse of above will
=
1 10 happen and output will go +Vsat.
V1 = –Vin × 10 ...(ii)
From equation (i) and (ii) we get, 17. (d)
Vout For –ve half of the input +ve terminal of op-amp
= –120 is at higher potential than –ve terminal and
Vin
output goes to +V sat but due to this high
14. (b) potential diode gets on and restricts the output
to 0.7 V only. And for +ve half of the input +ve
100 k
terminal of op-amp is at lower potential than
–ve terminal’s potential and output goes to –Vsat
10 k and remains at –Vsat.
–
Vy
+ 18. (a)
0A Output will be either at +Vsat or –Vsat. When
Vx output will be at +Vsat diode connected to 10 k
Ix Ix R3 = 1 M resistance will be on making voltage at point P
equal to 6 V.
Vx Vy
Here, Ix = When output is at –Vsat diode connected to 2 k
R3 resistance will be on making voltage at point P
equal to –10 V.
GATE Previous Years Solved Paper 47
19. (d) R
It behaves as current source because the output
V01 R
current (I0) depends upon (Vin) and resistance Vi P –
only. Vo
+
Q
V × R2 V02 R
R1 + R2 R2 V R
Where, I0 = =
r R1 + R2 r
Vo will be positive due to non-inverting action.
20. (c)
So, output is always rectified.
Let the voltage at the non-inverting terminal of
the op-amp be Va volts and the voltage at 22. (c)
inverting terminal be Vb volts.
R2
At t = 0+ switch is open V0 = 5 V and Vb = –10 V
V0 × 10 k 50
Va = = Volts
100 k + 10 k 11 R1 C
Vi –
At t , VA Vo
+
Vb 10 V
R3
Vb = Vf + (Vi – Vf ) e–t/RC ...(i) R4
50
Putting, Vb = at t = T1
11
Vi = –10 V R4
VA = × Vi
and Vf = 10 V in equation (i), R4 + R3
we get, T1 = 12.98 µ-sec RB V
VA = × Vi = i
At, t = 12.98 µ-sec RB + RB 2
V0 changes from 5 V to –5 V Let, Vi only on inverting terminal,
21. (b) Rf
V01 = Vi
For (Vin > 0), R1
P V01 = Negative 1 R2
Q V02 = 0 Here, R f = R2 =
sC 1 + sCR2
R
Let, Vi only on non-inverting terminal,
V01 R Rf Vi
Vi P – V02 = 1+
Vo R1 2
+
Q V0 = V01 + V02
V02 R
R Rf Vi
= 1
R1 2
Putting the value of Rf , we get,
V0 will be positive due to inverting action.
For (Vin < 0), R2 Vi
V0 = 1
P V01 = 0 R1 (1 + sCR2 ) 2
Q V02 = Positive Here, (R1 = R2 = RA)
48 Electronics Engineering Analog Electronics
1 Vi 26. (d)
V0 = ×
1 2 For emitter follower:
1+
sCR A Av 1; AI is high
So, it is a high pass filter. Ap = Av AI is high Pout > Pin
For transformer,
23. (d) Pin = Pout
(sCR A ) V
Vin = × i 27. (d)
1 + (sCR A ) 2
1k +6 V
1/ sC 1 Vi –
V0 = 1 R Vin = Vin Vo
C
+ A 1 + sRA V1 +
sC 2 2 –3 V 2k
sRAC
1
V0 = V
C (1 + sR AC ) in
1 + sRA 1k
2
Which is similar to equation of a band pass
filter. when Vi < V1 (upto t2);
V0 = +ve
24. (b) when Vi > V1 (t2 t t4);
Voltage-series feedback arrangement or voltage- V0 = –ve
voltage feedback.
1 1
V1 = V0 = V0
25. (d) 1+ 2 3
Is R = 10 k 28. (b)
2R
V0 = 1 + V = (1 + 2) (2) = 6 V
Vs +
R
Vs Vo
– 29. (d)
Vs
High pass filter
R = 10 k Los pass filter
C = 10 µ F
Vs V0
Is = ...(i)
R
1/ j C 20 Hz 30 Hz
Vs = V0 ...(ii)
1
R+ Pass band
j C
Is = –Vs j C It is a band pass filter.
= –j(10 × 2 × 50 × 10 × 10–6)
30. (d)
= –j10 .... mA
First section is differential amplifier having
= 10 mA lagging by 90°
gain –1.
GATE Previous Years Solved Paper 49
31. (b)
Vo
R2
+12 V
C R1 Vo
12 V Vi –
Vi
–12 V
+
–12 V
Vin 0 0 V0
Rf =
1 R2
R1 +
SC
R1
V1 –
Vo V0 R2
V2 +
=
R2 Vi 1
R1 +
Rg sC
It is a high pass filter with
1
f3-dB = rad/sec.
Output is, R1C
R f + R1 Rg Rf
Vo = V2 V1 32. (b)
R g + R2 R1 R1
Vo = V2 – V1 = –Vi
Q
Second stage-schmitt trigger,
1k +15 V
– –
V V out
Vo +
+ 5V
–15 V
Vt
Rf
Rg Using the concept of virtual ground, V = 0
Rg V0
Vt = ± V0 = =±6V Q
R f + Rg 2
Vo
Vout
33. (c)
Vi Output of first op-amp,
–6 V +6 V
1 1
Vout 1 = 2 +1 1+ = 2 + 1(2) = 4 V
1 1
–12 V
1
Vout = 4 1 + = 4(2) = 8 V
1
50 Electronics Engineering Analog Electronics
34. (b)
Op-amp ‘3’ circuit is a differential amplifier so,
V0 = V01 – V02 ...(i) Corner
frequency
Now, apply KCL at node ‘2’,
V2 V1 V2 V02 0 10 10
2
10
3
0 10 10
2 3
10
+ =0 ...(ii) 1 1
2R R
–10 – /4
and apply KCL at node ‘1’,
–20 – /2
V1 V2 V1 V01
+ =0 ...(iii) –30
–20 dB/dec
2R R
From equation (i), (ii) and (iii), we get,
V0 = 2(V1 – V2)
36. (d)
35. (a) The circuit of op-amp ‘1’ is a Schmitt trigger,
Rf therefore,
V01 = ±Vsat
and the circuit of op-amp ‘2’ is a non-inverting
–
R=1k Vo amplifier.
Vi +
V0 R
1 µF = 1+
V01 R
V0 = 2V01
where, V01 = ±Vsat
1k
– Therefore, the answer is V0 = ±Vsat.
Vo
Vi +
37. (c)
1 µF
Case-I : Vi > 0, the circuit will look like.
Buffer
R
R +Vsat
Low pass vi – R
–
+
This filter is considered as low-pass filter (LPF). +
–Vsat vo
The transfer function for LPF, R
R
V0 1/ sC 1
= =
Vi 1 1 + sCR
R+
SC
Hence, V0 = 0
1 1 Case-II : Vi < 0, the circuit will look like.
= =
1 + j (10 3 ) (10 6
) 1 + j (10 3
) R
1000 1
= = R
1000 + j s
1+ +Vsat
1000 R
vi – R +Vsat
c (corner frequency) = 103 rad/sec. –
+ V01
The gain at low frequencies, + vo
–Vsat
1 1 R –Vsat
Av = = =1 R
1 + sCR 1
GATE Previous Years Solved Paper 51
V0 R
and = R = 1000
V01 R
–
V0 = –V01 ...(iii) VA Vo
Vi +
From equation (ii) and (iii), A = 1000
V0 = Vi
I R Vi –1000 VA
So, V0 = –1000 VA
Since, circuit has negative feedback, so with help
Now, KCL at node ‘A’,
of virtual short VA = VB.
VA Vi VA V0
So, KVL in the loop from A to B given, =
1000 1 / SC
I I
I Vi + I =0 VA Vi VA ( 1000 VA )
sC sC =
1000 1/SC
Vi (sC )
So, I= VA – Vi = (1001 VA) sC
2
VA – Vi = (1001) × 1000 VA sC
So, VA = –IR
VA – Vi = s (1001000 × 10–6) VA
sCRVi VA – s1.001 VA = Vi
VA =
2
Vi
and VA = VB VA =
1 s(1.001)
sCRVi
so, VB = Since, V0 = –1000 VA
2
1000
VB V0 = Vi
Now, =I 1 s(1.001)
R
So, V0 = VB – IR Since, pole is at (1/1.001), so time constant is
approx ‘1’.
Vi (sCR ) Vi (sCR )
V0 =
2 2 40. Sol.
= –Vi (sCR) Vi = 2 sin(2 × 2000t)
So, V0 = –j RCVi The transfer function of the system is,
So, V0 lag Vi by 90° or phase or V0 w.r.t. Vi is –90°.
1000
H(s) =
(1000 × 0.1 × 10 6 s + 1)1000
52 Electronics Engineering Analog Electronics
1 44. (a)
H(s) = 4
(10 s + 1) R2
The input is 2 sin(2 × 2000t)
= 4000
V0 = 2 H ( j ) = 4000 × sin(4000 t ) R1
C
Vi –
Output = 1.245 sin(4000 t – 51.46°) Vo
So, amplitude of output is 1.245. +
41. (b)
To check the type of system:
1 1
We apply a delta function at input Vi = (t) R2 R2 +
Vout j C j C
R/2 =
Vin R1
R
F1 –
Vo Vout R2
Vi + =
A Vin R1 ( R2 j C + 1)
F2
R So the system is a low pass filter.
So, voltage at A will be same as voltage at output
45. (d)
V0. VA will be equal to voltage due to F1 + voltage
due to F2. Since, f1 < f2, so VA/Vi will be 9
VA /Vi 1 VB
V3 –
1 Vout
VA
V1 +
f 4
f1 f2
V0/Vi will be V2
Vo/Vi 4 1
VA = V1 + V2
5 5
Vout = –9 V3 + 10 VA
= –9 V3 + 8 V1 + 2 V2
f 46. (a)
f1 f2
1+
So, time period will be 2 ln ,
1
Vin > 0 VA = +VSS, D on, V0 = Vin
1 + 0.5 Vin < 0 VA = –VSS, D off, V0 = 0
T = 2 × RC ln = 0.55 ms
1 0.5
GATE Previous Years Solved Paper 53
Vo 1 1 V0
Vin + =
R2 R1 R1
V in
=
Vo
R1 + R2
Vo = 0
V in
Vin × R1 = V0
R1 R2
R1 + R2
V0 = Vin × ...(ii)
R2
Equation (ii) in equation (i),
47. (c) Vin V0
= iin
I3 R VB R I1 Z
R1 + R2
I2 R Vin Vin
R2
I3 R = iin
– Z
VA Vo
+ I1 Vin R1 + R2
2R
VA 1 = Z
iin R2
Vs Vin R2 R1 + R2
2R
iin R2 = Z
Vs
VA = Vin R2
2 = Z
iin R1
VA Vs
I3 = = ...(i)
R 2R 49. (a)
VB – VA = I 3 R
100 k
V V
VB = VA + I 3 R = s + s = Vs
2 2
10 k
VB Vs V3 = 10 mV
I2 = = ...(ii) –
R R Vo
I1 = I2 + I3 V2 = 50 mV +
10 k
Vs Vs Vs
= + = [1.5] R2 = 100 k
R 2R R
V0 – VB = I 1 R
V
V0 = VB + s [1.5] R R2
R V0 = (V2 V1 )
R1
= Vs + 1.5 Vs = 2.5 Vs
100 k
48. (b) = 10 k (50 mV 10 mV)
According to virtual ground,
= 10 (40 mV) = 400 mV
VA = VB = Vin
At node A,
Vin V0
= iin ...(i)
Z
2 Diodes Applications
5.9
(a) 0 mA, 180 mA (b) 5 mA, 110 mA
(a)
0 (c) 10 mA, 55 mA (d) 60 mA, 180 mA
–5.9 [EC-1996 : 2 Marks]
VZ
Vin = 20-30 V Vo = 10 V +
+
VBE – 1k
RB
+
15 DC
Vz = 3 V
unregulated –
(a) PZ = 75 mW, PT = 7.9 W power source 40 k
(b) PZ = 85 mW, PT = 8.9 W Regulated
20 k
(c) PZ = 95 mW, PT = 9.9 W DC output
–
(d) PZ = 115 mW, PT = 11.9 W
[EC-2001 : 2 Marks] (a) 3 V (b) 6 V
Q.9 A Zener diode regulator in the figure is to be (c) 9 V (d) 12 V
designated to meet the specifications: IL = 10 mA, [EC-2003 : 2 Marks]
Vo = 10 V and Vin varies from 30 V to 50 V. The
Q.12 In the voltage regulator shown in the figure, the
Zener diode has Vz = 10 V and Izk (knee current)
load current can vary from 100 mA to 500 mA.
= 1 mA. For satisfactory operation.
56 Electronics Engineering Analog Electronics
Assuming that the Zener diode is ideal (i.e., the Q.15 For the circuit shown below, assume that the
Zener knee current is negligibly small and Zener Zener diode is ideal with a breakdown voltage
resistance is zero in the breakdown region), the of 6 Volts. The waveform observed across R is
value of R is 6V
R
+
+ 12 sin t R VR
Variable load
12 V 5V 100 to 500 mA
– –
6V
(a) 7 (b) 70 (a)
70
(c) (d) 14 6V
3
[EC-2004 : 2 Marks] (b)
Q.13 In a full wave rectifier using two ideal diodes,
Vdc and Vm are the dc and peak values of the –12 V
Vi V1 = 5.8 V Load
20-30 6V 24 k
(a) 4.8 Watts (b) 5.0 Watts Q.19 For the Zener diode shown in the figure, the
(c) 5.4 Watts (d) 6.0 Watts Zener voltage at knee is 7 V, the knee current is
[EC-2006 : 2 Marks] negligible and the Zener dynamic resistance is
10 . If the input voltage (Vi) range is from 10 to
Q.17 If the unregulated voltage increases by 20%, the 16 V, the output voltage (Vo) ranges from
power dissipation across the transistor Q1
200
(a) increases by 20%
+
(b) increases by 50%
(c) remains unchanged Vi Vo
(d) decreases by 20%
–
[EC-2006 : 2 Marks]
Q.18 The correct full wave rectifier circuit is (a) 7.00 to 7.29 V (b) 7.14 to 7.29 V
(c) 7.14 to 7.43 V (d) 7.29 to 7.43 V
[EC-2007 : 2 Marks]
D1
Vi D2 Vo
Z 6.8 V
(b) Input
Output
The maximum and minimum values of the
output voltage respectively are
(a) 6.1 V, –0.7 V (b) 0.7 V, –7.5 V
(c) 7.5 V, –0.7 V (d) 7.5 V, –7.5 V
[EC-2008 : 1 Mark]
Vi 1A
(d) Input
Output
(a) min (Vi , 1) (b) max (Vi , 1)
(c) min (–Vi , 1) (d) max (–Vi , 1)
[EC-2009 : 2 Marks]
[EC-2007 : 1 Mark]
58 Electronics Engineering Analog Electronics
12.7 V
(a) Both D1 and D2 are ON. (a) –0.3 V < Vi < 1.3 V
(b) D1 is ON and D2 is OFF. (b) –0.3 V < Vi < 2 V
(c) Both D1 and D2 are OFF. (c) –1.0 V < Vi < 2.0 V
(d) D1 is OFF and D2 is ON. (d) –1.7 V < Vi < 2.7 V
[EC-2014 : 1 Mark] [EC-2014 : 1 Mark]
Q.28 The diode in the circuit shown has Von = 0.7 V Q.31 For the circuit with ideal diodes shown in the
but is ideal otherwise. If Vi = 5 sin( t) Volts, the figure, the shape of the output (vout) for the given
minimum and maximum values of Vo (in Volts) sine wave input (vin) will be
are, respectively
R1
Vi Vo T
0 0.5 T
1k
R2 1k
2V
+
Vin Vout
D
0.5 T
10 sin t 100 R C 4 mF (b) 0 T
f = 50 Hz
[EC-2015 : 1 Mark] D1 D2
10 k
6 sin( t) + –
Q.33 If the circuit shown has to function as a a b
clamping circuit, then which one of the Vab
10 k 20 k
following conditions should be satisfied for the
sinusoidal signal of period T ?
[EC-2015 : 2 Marks]
+ –
C
Q.37 The figure shows a half-wave rectifier with a
V R 475 µF filter capacitor. The load draws a
constant current Io = 1 A from the rectifier. The
figure also shows the input voltage Vi, the output
(a) RC << T (b) RC = 0.35 T voltage VC and the peak-to-peak voltage ripple
(c) RC T (d) RC >> T u on VC. The input voltage Vi is triangle wave
with an amplitude of 10 V and a period of 1 ms.
[EC-2015 : 1 Mark]
2k 3k
D 1k +10 V Vi
1 mA
0 t
4k 6k
–10 V
VC
[EC-2015 : 2 Marks] u
D1 D2
50 sin( t) R1
2k
0.5 µF i2
2V
b –V + a R2 6k
ab
[EC-2015 : 1 Mark]
GATE Previous Years Solved Paper 61
The magnitude of the current i2 (in mA) is equal (a) D1 only (b) D2 only
to _______ . (c) Both D1 and D2 (d) None of D1 and D2
[EC-2016 : 1 Mark] [EC-2016 : 2 Marks]
Q.39 The diodes D1 and D2 in the figure are ideal and Q.41 The output Vo of the diode circuit shown in the
the capacitors are identical. The product RC is figure is connected to an averaging DC
very large compared to the time period of the ac voltmeter. The reading on the DC voltmeter in
voltage. Assuming that the diodes do not volts, neglecting the voltage drop across the
breakdown in the reverse bias, the output diode, is ________ .
voltage Vo (in Volt) at the steady-state is _____ .
+
+ 10 sin t
D1 1k Vo
f = 50 Hz
C
10 sin t –
R Vo
[EC-2017 : 1 Mark]
AC
C
Q.42 In the figure, D1 is a real silicon pn-junction
D2
– diode with a drop of 0.7 V under forward bias
condition and D 2 is a Zener diode with
[EC-2016 : 1 Mark] breakdown voltage of –6.8 V. The input Vin(t) is
a periodic square wave of period T, whose one
Q.40 The I-V characteristics of the Zener diodes D1
and D2 are shown in Fig. (i). These diodes are period is shown in the figure.
used in the circuit given in Fig. (ii). If the supply Vi(t)
voltage is varied from 0 to 100 V, then breakdown +14 V
occurs in
T
I 0
t(sec)
–80 V –70 V
V
–14 V
10 µF
D1 D2 D1
10 V o (t )
D2
Fig. (i)
Q.43 A DC current of 26 µA flows through the circuit Q.45 In the circuit shown, Vs is a square wave of
shown. The diode in the circuit is forward period T with maximum and minimum values
biased and it has an ideality factor of one. At of 8 V and –10 V, respectively. Assume that the
the quiescent point, the diode has a junction diodes is ideal and R1 = R2 = 50 . The average
capacitance of 0.5 nF. Its neutral region value of VL is _____ Volts. (Rounded off to one
resistances can be neglected. Assume that the decimal place).
room temperature thermal equivalent voltage is
26 mV.
+8 V
5 sin( t) mV 0
T/2 T
100
V
–10 V
R1
For = 2 × 106 rad/sec, the amplitude of the
small signal component of diode current (in µA,
correct to one decimal place) is _____ .
+
[EC-2018 : 2 Marks] +
Vs R2 VL
Q.44 The circuit shown in the figure is used to provide
–
regulated voltage (5 V) across the 1 k resistor. –
Assume that the Zener diode has a constant
reverse breakdown voltage for a current range, [EC-2019 : 1 Mark]
starting from a minimum required Zener
Q.46 In the circuit shown, Vs is a 10 V square wave of
current, IZmin = 2 mA to its maximum allowable
period. T = 4 ms with R = 500 and C = 10 µF.
current. The input voltage V1 may vary by 5%
The capacitor is initially uncharged at t = 0, and
from its nominal value of 6 V. The resistance of
the diode is assumed to be ideal. The voltage
the diode in the breakdown region is negligible.
across the capacitor (VC) at 3 ms is equal to _____
R Volts (rounded off to one decimal place).
VI 1k +10 V
5V
0
T/2 T
–10 V
The value of R and the minimum required
t=0
power dissipation rating of the diode,
respectively, are R
Q.47 In the circuit shown, the breakdown voltage and TOFF = 1 µs is applied to the circuit shown in the
the maximum current of the Zener diode are 20 V figure. The diode D1 is ideal.
and 60 mA, respectively. The values of R1 and 20 nF
RL are 200 and 1 k , respectively. What is the +
range of Vi that will maintain the Zener diode
in the ‘ON’ state? Vin 500 k D1 Vo
R1
–
Vi RL
The difference between the maximum voltage
and minimum voltage of the output waveform
V0 (in integer) is _______ V.
(a) 20 V to 28 V (b) 24 V to 36 V
[EC-2021 : 2 Marks]
(c) 18 V to 24 V (d) 22 V to 34 V
[EC-2019 : 2 Marks] Q.51 A circuit and the characteristics of the diode (D)
in it are shown. The ratio of the minimum to the
Q.48 In the circuit shown below, all the components
are ideal and the input voltage is sinusoidal. Vout
maximum small signal voltage gain is
The magnitude of the steady-state output Vo Vin
(rounded off to two decimal places) is _____ V. _____ (Rounded off to two decimal places).
C1 = 0.1 µF D2
2k 2k
+
+
5V
10
10 k
0
0V ( V)
0 0.7 VD
t = 0 t = 20 ms 1 µF
+12 V
[EC-2022]
VIN –
VOUT
+
1 µF ELECTRICAL EN GINEERIN G
–12 V
D I
R
20 V 10 V 100
Vi = Vm sin t Vi 45
= 314 rad/sec
[EE-1991 : 2 Marks]
Vm Vm
Q.2 The depletion region (or) space change region (a) (b)
50 50 2
(or) transition region in a semiconductor p-n
junction diode has Vm 2Vm
(c) (d)
(a) electronics and holes 100 2 50 2
(b) positive ions and electrons [EE-2002 : 1 Mark]
(c) positive and negative ions
Q.7 The cut-in voltage of both zener diode Dz and D
(d) negative ions and holes shown in figure is 0.7 V, while breakdown
[EE-1996 : 1 Mark] voltage of the zener is 3.3 and reverse
Q.3 As temperature is increased, the voltage across breakdown of D is 5 V. The other parameters
a diode carrying a constant current can be assumed to be the same as those of an
ideal diode. The values of the peak output
(a) increases
voltage (Vo) are
(b) decreases
(c) remains constant 1k
A
V
B R D2
5V D1
8V
Vin Vout
(a) 0 mA (b) 0.5 mA
4V 4V
(c) 1 mA (d) 2 mA
10 k [EE-2005 : 1 Mark]
–
Q.13 What are the states of the three ideal diodes of
(a) +10 V and –10 V (b) +4 V and –4 V the circuit shown in figure?
(c) +7 V and –4 V (d) +4 V and –7 V 1
[EE-2003 : 2 Marks]
1
2.2 k
10 V D1 1 D3 5A
RZ = 0.1 k
IZ
+ +
10 V R1 3.5 V
VZ = 3.3 V (a) D1 ON, D2 OFF, D3 OFF
–
– (b) D1 OFF, D2 ON, D3 OFF
(c) D1 ON, D2 OFF, D3 ON
(a) 33 mA (b) 3.3 mA (d) D1 OFF, D2 ON, D3 ON
(c) 2 mA (d) 0 mA [EE-2006 : 1 Mark]
[EE-2004 : 1 Mark]
66 Electronics Engineering Analog Electronics
Vin RL = 10
D1 6.6 V
D2 Zener diode
2
Vi Vo RL =
0
10 V 5V
(a) 0.6 W (b) 2.4 W
(c) 4.2 W (d) 5.4 W
Vo
[EE-2007 : 1 Mark]
+ – + –
Vo
– + + –
(a)
(b) 5 10 k
Vi
5
10 sin t 5V Vo 1k
Vo
10
(b)
+5 V
Vo
(a) t
10 0 2
(d)
–5 V
Vi
10
10 V
[EE-2006 : 2 Marks]
(a) 4 V (b) 5 V
(c) 7.5 V (d) 12.12 V
+5.7 V
[EE-2010 : 1 Mark]
(c) t
0 2 Q.19 The transistor used in the circuit shown below
has a of 30 and ICBO is negligible.
–10 V
2.2 k
15 k
+5.7 V
1k D
VBE = 0.7 V
(d) t
0 2 VCE(sat) = 0.2 V
–5 V Vz = 5 V
[EE-2008 : 1 Mark]
–12 V
Q.17 In the voltage doubler circuit shown in the
If the forward voltage drop of diode is 0.7 V,
figure, the switch ‘S’ is closed at t = 0. Assuming
then the current through collector will be
diodes D1 and D2 to be ideal, load resistance to
(a) 168 mA (b) 108 mA
be infinite and initial capacitor voltages to be
zero. The steady-state voltage across capacitors (c) 20.54 mA (d) 5.36 mA
C1 and C2 will be [EE-2011 : 2 Marks]
5 sin t D1 C2 VC2 RL
Vi Vo
–
5V
–
Q.18 Assuming that the diodes in the given circuit (a) 4.3
are ideal, the voltage Vo is Vi
4.3
10 k
Vo
10 k 10
10 V Vo 15 V
(b)
10 k 4.3
Vi
4.3 10
68 Electronics Engineering Analog Electronics
10
1k
(d) W Y X
Z
–5.7
Vi
10
–5.7
+ –
1k
[EE-2011 : 2 Marks]
(sin t + sin t )
(a) sin t (b)
Q.21 The i-v characteristics of the diode in the circuit 2
given below are: (sin t sin t )
(c) (d) 0 for all t
v 0.7 2
A, v 0.7 V
i = 500 [EE-2013 : 2 Marks]
0 A, v < 0.7 V
Q.24 The sinusoidal ac source in the figure has an
The current in the circuit is
rms value of 20 / 2 V. Considering all
1k
possible values of RL, the minimum value of Rs
i (in ) to avoid burn out of the Zener diode is
+
10 V +
______ .
–
D v
–
Rs
Iload 10 k
10 V
Vz = 5 V RL
Vi 10 k Vo
1V 2V
GATE Previous Years Solved Paper 69
Answers
EC Diodes Applications
Solutions
EC Diodes Applications
1. (c) Vo
10 6 4
I= = = 80 mA
50 50
I= IZ + IL
5.9 V
= IZmin + ILmax
IZmin = 5 mA
80 = 5 + ILmax 3. (a)
ILmax = 75 mA Ebers Moll model is a composite model and is
VL used to predict the operation of BJT all of its
ILmax =
Rmin possible modes.
VL 6 4. (c)
Rmin = = 3
I L max 75 × 10
Current through 50 resistance = I
= 80
9 6 3
I= = = 60 mA
2. (a) 50 50
Given that,
Vo
IZmin = 5 mA
5.9 PZmax = IZmaxVz = 300 mW
0 3
300 × 10
–5.9
IZmax =
Vz
3
DA DB 300 × 10
= = 50 mA
6
4.1 V 4.1 V I= IZmin + ILmax
10 sin314t 10 k Vo
= IZmax + ILmin
60 = 50 + ILmin
ILmin = 10 mA
60 = 5 + ILmax
Case-1: During +ve half cycle
ILmax = 55 mA
Diode DA is forward bias, so DA is short-circuit.
Diode DB is reverse bias, so DB is in conducting 5. (d)
state when Vi > 4.1 V. A resistance: For small signal ac operation, a
Vo practical forward biased diode can be modeled
5.9 V as a resistance.
6. (d)
A four diode bridge rectifier uses the smaller
size of transformer, which is less expensive
Case-2: During –ve half cycle
transformer and these rectifiers are suitable for
Diode DB is forward bias, so DB is short-circuit.
higher voltage applications, because of low PIV
Diode DA is reverse bias, so DA is in conducting
rating required of each diode.
state when Vi > 4.1 V.
GATE Previous Years Solved Paper 71
7. (b) Vin Vo
IZ + IL
VNL VFL R
Regulation = when, Vin = 30 V
VFL
30 10
30 25 1 (10 + 1) mA
= = = 20% R
25 5
20
VDCNL VDCFL 11 mA
Ro = =5 R
IDC
R 1818
8. (c) 11. (c)
I1 20 As voltage at non-inverting terminal is 3 V due
to zener diode, voltage at inverting terminal will
IZ IC
be 3 V because of virtual ground.
IB 3 3
Vin = 20-30 V
+
Vo = 10 V So, current in 20 k is = mA
20 k 20
RB VBE –
IE 3
Vo = × 60 k =9V
20 k
Vinmax Vo
I1max = 12. (d)
20
I = IZ + IL
30 10 = IZmin + ILmax
I1 = = 1 A (i.e. when, IZ = 0)
20
= 0 + 500 mA
IE = IC + IZ ...(i)
Vin Vz 12 5
IB = IZ (as no current flows in RB) R= =
I 500 mA
I I
= C = C = 14
I B IZ
IC = IZ 14. (c)
From equation (i), I1 1k I2
IE = IZ + IZ = (99 + 1) IZ
IE = 100 IZ IZ
–
72 Electronics Engineering Analog Electronics
6V 24 k VD = 4 × 2.7
12.7 V
= 2.8
+ Vo = –1.7 V
10 V VD1 0.3 V For case-(ii):
–
–1.7 < Vi < 2.7
D1 OFF
Apply KVL, D2 OFF
10 = 1000I + 20I + 0.3 R
9.7 + +
I= = 9.5 mA
1020
Vi Vo
Now, we calculate VD of
1
10 = 9.5 + VD1 – –
VD1 = 0.5 V Vo = Vi
31. (c)
Since, VD1 < 0.7 V, D1 is in OFF state i.e. our
The circuit can be redrawn as:
assumption is correct and hence (d) is the correct
D1
option. a d
vin +
vout
–
28. (c) Vo
R t
t
If, Vin = –5 V Diode is off D2
+
–
Vo = Vin = –5 V b c
2V
34. Sol. 6k
The bridge is balanced bridge, so diode will be
OFF.
Let diode: ON
Current through 4 k resistor can be obtained
VA = 2 – 0.7 = 1.3 V
by applying current division rule.
1.3
i2 =
6k
2k 3k 0.7
i1 =
2k
1 mA i d = i2 – i1
i
1.3 0.7
4k 6k = mA mA = ve
6 2
Diode is OFF:
Current through 4 k resistor is 0.6 mA.
35. Sol.
2k
The circuits work as a voltage doubler. i2
Vab = 2 × 50 = 100 2V
6k
36. Sol.
During positive cycles,
2V
V i2 = = 0.25 mA
V1 = in 2 k +6 k
2
During negative cycles, 39. Sol.
Vin During first positive quarter cycle both diodes
Vo =
3 D1 and D2 conduct and at t = T/4 both will be
Vo OFF.
Vm/2 +
Vm/3
10 V
t 10 sin t – +
R Vo = 0
Vm 1 Vm 1 6 6 – –
VDC = + = + =5V 10 V
2 3 2 3 +
GATE Previous Years Solved Paper 75
= 100 61
42. (a)
Its a negative clamper with Vref = 6.8 V Vm 5 mV
Im = =
In steady-state, Z 100 61
Vcap = 14 – 0.7 – 6.8 = 6.5 V 50
= µA = 6.40 µA
Vomax = Vin max – Vcap 61
= 14 – 6.5 V
Vo min = Vin in – Vcap 44. (b)
= –14 – 6.5 = –20.5 V VI = 6 V ± 5%
= 6 V ± 0.3 V
43. Sol.
= 5.7 V to 6.3 V
The small-signal equivalent model of the given
5V
circuit can be drawn as shown below: IL = = 5 mA
1k
Is(min) = IL + IZ(min)
Cj
= 5 mA + 2 mA = 7 mA
i(t)
rd VI Vz
Is =
5 sin( t) mV 100 R
VI (min) Vz
Is(min) = = 7 mA
R
Given that, = 2 × 106 rad/sec 5.7 5
So, R= k
Cj = 0.5 nF 7
IDC = 26 µA 700
= = 100
VT = 26 mV 7
= 1 When R = 100 ,
VT 26 mV 6.3 5
So, rd = = =1k A = 13 mA
I DC 26 µA Is(max) =
100
1 1 Iz(max) = Is(max) – IL
= 6 9
Cj 2 × 10 × 0.5 × 10 = 13 mA – 5 mA
= 1k = 8 mA
So, total impedance of the circuit will be Pz(min) = Vz Iz(max)
= (5 × 8) mW
1
Z= rd + 100 = 40 mW
j Cj
76 Electronics Engineering Analog Electronics
45. Sol. For 2 ms < t < 4 ms, diode is OFF and capacitor
When, Vs = 8 V Diode is in reverse bias, has no path to discharge.
50
Hence, at t = 3 ms, Vcap = 3.3 V
47. (b)
+
Vs 50 VL R1 = 200
– +
I1 IZ IL
Vi RL = 1 k Vo
8 × 50
VL = =4V
50 + 50
–
If Vs = –10 V, diode is in forward bias,
Vz = 20 V
IZmax = 60 mA
+
Vs 50 VL
Set zener diode be OFF,
– Vi × 1 Vi
Vo = =
0.2 + 1 1.2
Average value of VL Zener diode can become ON i.e. it goes into
breakdown, when
Area
= Vi
Time period > 20 V
1.2
4 × 0.5T + ( 10) × 0.5T
= = –3 V Vi > 24 V
T
When Zener diode is in breakdown region,
46. Sol. Vi 20 Vi 20
I1 = = mA
vi 0.2 k 0.2
+10 V Vo 20
IL = = = 20 mA
RL 1 k
0 t
2 ms 4 ms
Vi 20
–10 V Iz = I1 IL = 20
0.2
vcap For safe operation,
10 V
Iz Izmax
Vi 20
20 60
0 t 0.2
2 ms 4 ms
Vi 36 V
= RC = 500 × 10 × 10–6 Hence, 24 < Vi < 36 V
= 5 ms
t 48. Sol.
0<t< ; Vcap = Vf + (Vi – Vf ) e–t/
2 Voltage doubles,
= 10 + (0 – 10) e–t/RC Vo = 2 Vm
At t = 2 msec,
= 2 × 230 2
2 × 10 3 650.4 V
5 × 10 3
Vcap = 10 10 e
= 3.296 V 3.3 V
GATE Previous Years Solved Paper 77
49. (–12) 20 nF
+ –
+ +
5V
10 k
10 V 500 k D1 Vo = 0
0 20 m 1 µF
+12 V – –
VIN –
VOUT
+ and VC (Voltage across capacitor) = 10 V ...(1)
1 µF
–12 V
Case (ii) : If Vin = 0 V D1 is OFF.
20 nF
+ + – +
5V VC
10 k
Vi 500 k D1 Vo
iC
0 20 m
C = 2 µF +12 V – –
VIN –
0V VOUT
iC + The duration of input pulse with amplitude 0 V
–12 V is, TOFF = 1 µsec
and discharge time for capacitor,
Tdischarge = 20 nF × 500 k
0 Vo dV = 10 msec
iC = = C in
R dt i.e., Tdischarge >>TOFF
d Vo = Vi – VC
Vo = RC Vin
dt = 0 V – 10 V = –10 V ...(2)
= –RC [Slope of input Vin] Note : The difference between maximum voltage
= –RC [ ] and minimum voltage of the output waveform
= –Vsat = 0 – (–10 V)
= –12 V = 10 V ...(3)
vi
50. (10)
10 V TOFF
Given: Vin = 10 V TON = 1 ms
Asymmetrical periodic pulse train, t
0
TON = 1 m-sec vo
and TOFF = 1 µsec 1 µs
t
Diode is ideal, 0
–10 V
20 nF
+
51. (0.75)
Vin 500 k D1 Vo When diode is OFF :
I 2k 2k
Vin
Case (i) : If Vin = 10 V D1 is ON. Vout
2k
78 Electronics Engineering Analog Electronics
Answers
EE Diodes Applications
9. (d) 10. (c) 11. (c) 12. (a) 13. (a) 14. (a) 15. (b) 16. (a)
17. (d) 18. (b) 19. (d) 20. (c) 21. (d) 22. (b) 23. (d) 24. (300)
Solutions
EE Diodes Applications
1. Sol. 2. (c)
Current in 100 resistance, Charge recombination occurs in depletion
10 V region.
I100 = = 100 mA
100
3. (b)
I2 = 25 mA
dVD
Current in resistance, = 2.5 mV/°C
dT
R = 100 mA + 25 mA
= 125 mA 4. (a)
Also, 20 – 10 = 125 × 10–3 × R
Drift velocity
10 × 1000 µ=
R= = 80 Electric field
125
GATE Previous Years Solved Paper 79
5. (b) 9. (d)
V 25 mV 10 k
rD = T = = 12.5
ID 2 mA
D1 D2
6. (a)
Vin I 4V 4V
Vm
Vav = 10 k
Vav Vav
Iav = = For +ve cycle, when Vin < –4 V
R (5 + 45)
(Vin > 4 V) D2 ON, D1 OFF, Vout = 4 V
Vav Vm where Vin < 4 V, then Vout = Vin because D2 also
= =
50 50 become (OFF).
For –ve cycle, when Vin < –4
7. (b)
D1 ON, D2 OFF:
For positive half cycle, at peak input voltage,
Vin + 4
I=
1k 4 mA 20 k
But, Vin = –ve
+ 3.3 V Vin + 4 3
I= = mA
10 V 1k Vo 20 10
– (Q for minimum output, Vin = –10 V)
0.7 V
3
Vout = × 10 k 4 = 7 V
10
So, Vo = 4 V
For negative half cycle, at peak input voltage, 10. (c)
Vz 3.5 3.3
1k 2 mA Rz = =
Iz Iz
– 0.2
Iz = = 2 mA
Vo
0.1 k
10 V 1k
+ O.C. 11. (c)
From the circuit, if ‘D1’ is ‘ON’ Kirchoff’s law is
not satisfied.
1
So, Vo = 10 × =5V D1 is OFF and D2 is ON.
1+1 I = 0 mA
20. (c)
10 For positive voltage the waveform clips at +5.7 V.
VP = × 10 sin t
10 + 10 For negative voltage at –0.7 V, the zener diode
= 5 sin t conducts and clips out.
Since maximum voltage across at point P may Vo
be 5 V, hence voltage across the diode always
will be less than or equal to zero. So it will be 5.7 V
i W Y X
+
10 V + Z
–
v
–
10 = 103 i + v 1k
1k
As, VD = –ve
W Y X ‘1’ can not be neglected in diode current
Z equation,
I1 = I0 [ e 30 mV /30 mV 1]
1k
= I0 [e–1 – 1]
= –0.64 I0 ...(i)
VWX = 0
82 Electronics Engineering Analog Electronics
27. (c)
1.5 I1 = I0 [ eVD /30 mV 1]
R1, low, R2 high,
–1.5 × 0.64I0 = I0 [ eVD /30 mV 1] R2
VD = V ×
R1 + R2
V /30 mV
–0.96 = e D 2 1
If R2 is large Vd (high).
V /30 mV
1 – 0.96 = e D R1 is less VD = V.
30 mV ln(0.04) = VD = –0.09 V So for maximum power to deliver to load R1 is
small and R2 is large.
3 BJT Analysis
(a) 20 k (b) 16 k
B (c) 5 k (d) 4 k
[EC-1988 : 2 Marks]
Q.7 For good stabilized biasing of the transistor of Q.10 If the transistor in figure has high value of
the CE amplifier of figure, we should have and VBE of 0.65 the current I flowing through
the 2 k resistance will be ______ .
+VCC
RC I
R2
6.5 k 2k
+
+ R1 R2 = RB
Vo
Vin R1 +
RE
10 V
– – 1.85 k –
RE RE
(a) << 1 (b) >> 1
RB RB
1.65 k
1k
RE RE
(c) << hFE (d) >> hFE
RB RB
[EC-1990 : 2 Marks]
[EC-1992 : 2 Marks]
Q.8 Which of the following statements are correct
for basic transistor amplifier configurations? Q.11 The bandwidth of an n-stage tuned amplifier,
with each stage having a bandwidth of B, is
(a) CB amplifiers has low input impedance and
given by
low current gain.
(b) CC amplifiers has low output impedance B B
(a) (b)
and high current gain. n n
(c) CE amplifiers has very poor voltage gain B
(c) B 2 1/ n 1 (d)
but very high input impedance. 2 1 /n
1
(d) The current gain of CB amplifier is higher [EC-1993 : 1 Mark]
than the current gain of C amplifiers.
Q.12 For the amplifier circuit of figure. The transistor
[EC-1990 : 2 Marks]
has a of 800. The mid-band voltage gain Vo/Vi
Q.9 In figure all transistors are identical and have a of the circuit will be
high value of beta. The voltage VDC is equal to
_______ . +15 V
10 V
470
200 k
5 mA 1k
4.74 µF 6.4 µF +
V DC = ?
+
Vo
Vin 100 k
– –
Q.13 cut-off frequency of a bipolar junction (a) gm1 (b) 0.5 gm1
transistor (c) gm2 (d) 0.5 gm2
(a) increase with the increase in base width. [EC-1996 : 2 Marks]
(b) increase with the increase in emitter width.
Q.18 Match the following:
(c) increase with the increase in collector
(a) Cascade amplifier
width.
(b) Differential amplifier
(d) increase with decrease in base width.
(c) Darlington pair common-collector amplifier
[EC-1993 : 2 Marks]
1. does not provide current gain
Q.14 In order to reduce the harmonic distortion in an 2. is a wide band amplifier
amplifier its dynamic range has to be _____ . 3. has very low input impedance emitter
[EC-1994 : 1 Mark] amplifier
4. has very high input impedance and very
Q.15 A common emitter transistor amplifier has a
high current gain
collector current of 1.0 mA when its a base
5. provides high common mode voltage
current is 25 µA at the room temperature. It’s
rejection
input resistance is approximately equal to ___ .
[EC-1996 : 2 Marks]
[EC-1994 : 1 Mark]
Q.19 In the BJT amplifier shown in the figure is the
Q.16 A transistor having = 0.99 and VBE = 0.7 V, is
transistor is biased in the forward active region
used in the circuit of the figure is the value of
putting a capacitor across RE will
the collector current will be
+VCC
+12 V
1k RL
Rbias
+
1k
10 k +
Vout
Vin
RE
– –
1k
(a) decrease the voltage gain and decrease the
input impedance.
[EC-1995 : 1 Mark] (b) increase the voltage gain and decrease the
input impedance.
Q.17 A Darlington stage is shown in the figure is, if
(c) decrease the voltage gain and increase the
the transconductance of Q1 is gm1 and Q2 is gm2,
input impedance.
then the overall transconductance is given by
gm is (d) increase the voltage gain and increase the
input impedance.
VCC
[EC-1997 : 1 Mark]
(c) an emitter follower stage followed by a Q.24 The emitter coupled pair of BJT’s gives a linear
common base stage. transfer relation between the differential output
(d) a common base stage followed by a common voltage and the differential input voltage Vid
emitter stage. only. When the magnitude of Vid is less ‘ ’ times
[EC-1997 : 1 Mark] the thermal voltage, when ‘ ’ is
(a) 4 (b) 3
Q.21 The circuit of the figure is an example of
(c) 2 (d) 1
feedback of the following type:
[EC-1998 : 1 Mark]
+VCC
Q.25 A multistage amplifier has a low pass response
Vo
with three real poles at s = – 1, – 2 and 3. The
approximate overall bandwidth B of the
amplifier will be given by
Vi
(a) B = 1 + 2 + 3
1 1 1 1
(a) current series (b) current shunt (b) = + +
B 1 2 3
(c) voltage series (d) voltage shunt 1/3
(c) B = ( 1 + 2+ 3)
[EC-1998 : 1 Mark]
(d) B = 2 2 3
1 + 2 + 3 [EC-1998 : 1 Mark]
Q.22 From measurement of the rise time of the output
pulse of an amplifier whose input is a small
Q.26 In a series regulated power supply circuit the
amplitude square wave, one can estimate the
voltage gain Av of the “pass”, transistor satisfies
following parameter of the amplifier
the condition
(a) gain-bandwidth product
(a) Av (b) 1 << Av <<
(b) slew rate
(c) Av » 1 (d) Av << 1
(c) upper 3-dB frequency
[EC-1998 : 1 Mark]
(d) lower 3-dB frequency
[EC-1998 : 1 Mark] Q.27 In the cascade amplifier shown in the figure, if
the common-emitter stage (Q 1 ) has a
Q.23 A distorted sinusoid has the amplitude, A1, A2, transconductance gm1, and the common base
A3,...... of the fundamental, second harmonic, stage (Q2) has a transconductance gm2, then the
third harmonic, ..... respectively. The total overall transconductance g(= i o/v i) of the
harmonic distortion is cascade amplifier is
A 2 + A3 + .....
(a) Q2 Vo
A1 io
Q.28 In the differential amplifier of the figure, if the (a) indeterminate since Rc is not given
source resistance of the current source IEE is (b) 1 mA
infinite, then the common mode gain is (c) 5 mA
(d) 10 mA
VCC
[EC-2000 : 2 Marks]
R R
Q.31 The current gain of a bipolar transistor drops at
high frequencies because of
(a) transistor capacitances
Vin 1 V in2 (b) high current effects in the base
(c) parasitic inductive elements
IEE (d) the early effect
–VEE
[EC-2000 : 1 Mark]
0
15 V
–3
(a)
RC
10 k f
IC 20 Hz 1 kHz
Av dB
0
5k
430 –3
(b)
f
40 Hz 0.5 kHz
88 Electronics Engineering Analog Electronics
Av dB
(a) CB-LO, CC-MO, CE-HI
(b) CB-LO, CC-HI, CE-MO
0
(c) CB-MO, CC-HI, CE-LO
–3
(c) (d) CB-HI, CC-LO, CE-MO
[EC-2003 : 1 Mark]
f
40 Hz 1 kHz Q.36 Generally, the gain of a transistor amplifier falls
at high frequencies due to the
(a) internal capacitances of the device
Av dB
(b) coupling capacitor at the input
0 (c) skin effect
–3
(d) (d) coupling capacitor at the output
[EC-2003 : 1 Mark]
f
40 Hz 2 kHz Q.37 In the amplifier circuit shown in the figure, the
values of R1 and R2 are such that the transistor
is operating at VCE = 3 V and IC = 1.5 mA when
[EC-2002 : 1 Mark]
its is 150. For a transistor with of 200, the
Q.34 If the transistor in the figure is the saturation, operating point (VCE, IC) is
then VCC = 6 V
C R2
R1
IC
dc denotes the
B
IB dc current gain
E
(a) (2 V, 2 mA) (b) (3 V, 2 mA)
(a) Ic is always equal to dcIB. (c) (4 V, 2 mA) (d) (4 V, 1 mA)
(b) Ic is always equal to – dcIB. [EC-2003 : 2 Marks]
(c) Ic is greater than or equal to dcIB. Q.38 Assuming V CEsat = 0.2 V and = 50, the
(d) Ic is less than or equal to dcIB. minimum base current (IB) required to drive the
[EC-2002 : 1 Mark] transistor in the figure to saturation is
Q.35 Choose the correct match for input resistance of 3V
various amplifier configurations shown below: IC
Configuration: 1k
CB : Common Base
IB
CC : Common Collector
CE : Common Emitter
Input resistance:
LO : Low
(a) 56 µA (b) 140 µA
MO : Moderate
(c) 60 µA (d) 3 µA
HI : High
[EC-2004 : 1 Mark]
GATE Previous Years Solved Paper 89
5V
IC
V1 V2
2.2 k
4k
RE
+
VCE –VEE
–
1k (a) increases both the differential and common
300 mode gains.
(b) increases the common mode gain only.
(c) decreases the differential mode gain only.
(a) IC = 1 mA, VCE = 4.7 V (d) decreases the common mode gain only.
(b) IC = 0.5 mA, VCE = 3.75 V [EC-2005 : 2 Marks]
(c) IC = 1 mA, VCE = 2.5 V
Q.43 The circuit using a BJT with = 50 and
(d) IC = 0.5 mA, VCE = 3.9 V VBE = 0.7 V is shown in the figure. The base
[EC-2004 : 2 Marks] current I B and collector voltage V C are
Q.40 The cascade amplifier is a multistage respectively
configuration of
20 V
(a) CC-CB (b) CE-CB
2k Vo
(c) CB-CC (d) CE-CC 430 k
[EC-2005 : 1 Mark]
12 V
Q.53 In the silicon BJT circuit shown below, assume
that the emitter area of transistor Q1 is half that
of transistor Q2.
3k
100 k
V o(t )
10 nF R = 9.3 k Io
Vi(t)
10 nF
Q1 Q2
20 k
900 k 10 µF
( 1 = 700) ( 2 = 715)
–10 V
(a) vo(t) = –1500 (A cos20t + B sin106t) The value of current Io is approximately
(b) vo(t) = –150 (A cos20t + B sin106t)
(a) 0.5 mA (b) 2 mA
(c) vo(t) = –1500 B sin106t
(c) 9.3 mA (d) 15 mA
(d) vo(t) = –150 B sin106t
[EC-2010 : 1 Mark]
[EC-2009 : 2 Marks]
Common Data for Questions (54 and 55):
Q.52 The amplifier circuit shown below uses a silicon Consider the common emitter amplifier shown below
transistor. The capacitors CC and CE can be with the following circuit parameters:
assumed to be short at signal frequency and the
= 100, gm = 0.3861 A/V, ro = , r = 259 ,
effect of output resistance ro can be ignored. If
Rs = 1 k , RB = 93 k , RC = 250 , RL = 1 k ,
CE is disconnected from the circuit, which one
C1 = and C2 = 4.7 µF
of the following statements is true?
V CC = 9 V +10 V
RC
RB
RC = 2.7 k C1
RB = 800 k C2
Vo
CC +
= 100 Rs
Vi Vo RL
CC
+ –
Vs Vs
RE = 0.3 k CE –
RI Ro
5V
E
10 µH 2k 1 nF
(a) 250 (b) 27.5
(c) 25 (d) 22.5
C2 [EC-2012 : 1 Mark]
Q1
+ Q.59 The voltage gain A v of the circuit shown
2.7 V
vo 2k below is
–
2k C1 13.7 Volts
vi
12 k
C
(a) maximum (b) minimum vo
10 k
C
(c) unity (d) zero = 100
[EC-2011 : 1 Mark] 10 k
vi
Q.57 For the BJT Q1 in the circuit shown below, = ,
VBEon = 0.7 V, VCEsat = 0.7 V. The switch is
initially closed. At time t = 0, the switch is
opened. The time t at which Q1 leaves the active (a) Av 200 (b) Av 100
region is (c) Av 20 (d) Av 10
5V [EC-2012 : 2 Marks]
4.3 k IC
R1 = 60 k
–10 V
Q
(a) 10 ms (b) 25 ms
(c) 50 ms (d) 100 ms R2
RE = 500
[EC-2011 : 2 Marks]
Q.61 A good current buffer has Q.64 In the circuit shown, the pnp transistor has
(a) low input impedance and low output VBE = 0.7 V and = 50. Assume that
impedance.
RB = 100 k . For Vo to be 5 V, the value of RC
(b) low input impedance and high output
(in k ) ________ .
impedance.
(c) high input impedance and low output
impedance. RC
(d) high input impedance and high output
impedance. Vo
[EC-2014 : 1 Mark]
12 V
[EC-2014 : 1 Mark]
11 k R2 Rs 10 RC
50 k
1k RE C 1 mF 5V
RB
[EC-2014 : 2 Marks]
(a) For RC = 1 k , the BJT operates in the
Q.63 A cascade connection of two voltage amplifiers
saturation region.
A1 and A3 is shown in the figure. The open-loop
(b) For RC = 3 k , the BJT operates in the
gain A vo , input resistance R in and output
saturation region.
resistance Ro for A1 and A2 are as follows:
(c) For RC = 20 k , the BJT operates in the
A1 : Avo = 10, Rin = 10 k , Ro = 1 k
cut-off region.
A2 : Avo = 5, Rin = 5 k , Ro = 200 k
(d) For RC = 20 k , the BJT operates in the linear
The approximate overall voltage gain vout/vin
region.
is
[EC-2014 : 2 Marks]
(c) increase the voltage gain and reduce the Q.69 An increase in the base recombination of a BJT
input impedance. increase
(d) increase both the voltage gain and the input (a) the common-emitter dc current gain .
impedance. (b) the breakdown voltage BVCEO.
[EC-2014 : 1 Mark] (c) the unity gain cut-off frequency fT.
Q.67 Consider the common-collector amplifier in the (d) the transconductance gm.
figure (bias circuitry ensures that the transistor [EC-2014 : 1 Mark]
operates in forward active region, but has been Q.70 A BJT in a common base configuration is used
omitted for simplicity). Let IC be the collector to amplify a signal received by a 50 antenna.
current, VBE be the base-emitter voltage and VT Assume kT/q = 25 mV. The value of the collector
be the thermal voltage. Also, gm and ro are the bias current (in mA) required to match the input
small signal transconductance and output impedance of the amplifier to the impedance of
resistance of the transistor, respectively. Which the antenna is ______ .
one of the following conditions ensures a nearly
[EC-2014 : 2 Marks]
constant small signal voltage gain for a wide
range of values of RE ? Q.71 In the circuit shown, I1 = 80 mA and I2 = 4 mA.
Transistors T1 and T2 are identical. Assume that
the thermal voltage VT is 26 mV at 27°C. At 50°C,
the value of voltage V12 = V1 – V2 (in mV) is
Vin
Vs
Vo
RE I2 I1
– +
V2 V 12 V1
R1 5k
1 µF
vi
Vo
1 µF
vo
R2 10 k
Vi
RE 1k
60 k V C2
500 1V
1k
[EC-2015 : 1 Mark]
VCC = 12 V 5V
RC 2k
1k
73 k R1 C2
vo
C1 +
10 µ F
Q1
10 µF
RL 8k Vo vs
Vi 47 k R2
RE 2k CE
100 µF –
Q2
RB2
[EC-2017 : 2 Marks]
RC 10 k
16 k 2k C1
vo
1 µF
RL 10 k
vi
The value of the collector-to-emitter voltage VCE
(in Volt) is ______ .
20 k RE CE 100 µF
[EC-2017 : 1 Mark]
VEE = –10 V
Q.80 In the circuit shown, transistor Q1 and Q2 are
biased at a collector current of 2.6 mA. (a) –178.85 (b) –256.42
Assuming, that transistor current gains are (c) –128.21 (d) –89.42
sufficiently large to assume collector current [EC-2020 : 2 Marks]
equal to emitter current and thermal voltage of
26 mV, the magnitude of voltage gain Vo/Vs in Q.82 In the voltage regulator shown below, Vt is the
the mid-band frequency range is ______ (upto unregulated at 15 V. Assume, VBE = 0.7 V and
second decimal place). the base current is negligible for both the BJTs. If
the regulated output Vo is 9 V, the value of R2 is
_______ .
GATE Previous Years Solved Paper 97
20 V
[EE-1998 : 2 Marks]
10 k
10 k Q.5 The enhancement type n-channel MOSFET is
represented by symbol
= 100
(a) (b)
5k
10 k
(b) (d)
20
(a) V (b) 10 V [EE-1999 : 1 Mark]
3
(c) 14 V (d) 20 V Q.6 In the circuit of figure, the value of the base
[EE-1991 : 1 Mark] current IB will be
ID
VGS
0
(a) 2.8 mA (b) 2.0 mA
(a) an n-channel depletion mode device (c) 1.4 mA (d) 1.0 mA
(b) an n-channel enhancement mode device [EE-2003 : 2 Marks]
(c) an p-channel depletion mode device Q.11 Two perfectly matched silicon transistors are
(d) an p-channel enhancement mode device connected as shown in figure. The value of the
[EE-2003 : 1 Mark] current I is
IC
33 k
12 V –5 V
Q.12 The transconductance g m of the transistor Q.15 The common emitter amplifier shown in the
shown in figure is 10 mS. The value of the input figure is biased using a 1 mA ideal current
resistance RIN is source. The approximate base current value is
V CC = 5 V
V CC
RC = 1 k
RC
10 k C Vo
Vo
C = 100
Vs = 50
+
Vin
1 mA
10 k –
1k C
(a) 0 µA (b) 10 µA
(a) 10.0 k (b) 8.3 k (c) 100 µA (d) 1000 µA
(c) 5.0 k (d) 2.5 k [EE-2005 : 2 Marks]
[EE-2004 : 2 Marks] Statement for Common Data Questions (16 and 17):
Q.13 The value of R for which the PMOS transistor in Assume that the threshold voltage of the n-channel
figure will be biased in linear region is MOSFET shown in figure is +0.75 V. The output
+4 V characteristics of the MOSFET are also shown.
VDD = 25 V
VT = –1 V
R = 10 k
R 1 mA
Vout
D VGS = 3 V
G 3
10 V 2k Vab
S
VGS = 2 V
2V 2
VGS = 1 V
b 1
(a) 5 V (b) 2 V
(c) 1 V (d) 0 V 0 VDS (V)
[EE-2005 : 1 Mark]
100 Electronics Engineering Analog Electronics
Q.16 The transconductance of the MOSFET is Q.20 Two perfectly matched silicon transistor are
(a) 0.75 mS (b) 1 mS connected as shown in the figure. Assuming
(c) 2 mS (d) 10 mS the of the transistors to be very high and the
forward voltage drop in diodes to be 0.7 V, the
[EE-2005 : 2 Marks]
value of current I is
Q.17 The voltage gain of the amplifier is +5 V
(a) +5 (b) –7.5 1k
I
(c) +10 (d) –10
[EE-2005 : 2 Marks]
Q1 Q2
Q.18 Consider the circuit shown in figure. If the of
the transistor is 30 and ICBO is 20 nA and the
–5 V
input voltage is +5 V, the transistor would be
(a) 0 mA (b) 3.6 mA
operating in
(c) 4.3 mA (d) 5.7 mA
+12 V
[EE-2008 : 2 Marks]
2.2 k
Q.21 The transistor circuit shown uses a silicon
15 k transistor with VBE = 0.7 V, IC IE and a dc
Vi Q
current gain of 100. The value of Vo is
100 k +10 V
–12 V
50 k
(a) saturation region 10 k
(b) active region
(c) breakdown region
(d) cut-off region
Vo
[EE-2006 : 2 Marks]
100
Q.19 The common emitter forward current gain of the
transistor shown is F = 100.
+10 V
(a) 4.65 V (b) 5 V
1k (c) 6.3 V (d) 7.23 V
[EE-2010 : 2 Marks]
(a) Av 200 (b) Av 100 Q.26 When a bipolar junction transistor is operating
in the saturation mode, which one of the
(c) Av 20 (d) Av 10
following statements is true about the state of
[EE-2012 : 2 Marks]
its collector-base (CB) and the base-emitter (BE)
Q.23 The transistor in the given circuit should always junctions?
be in active region. (a) The CB junctions is forward biased and the
(Take, VCE(sat) = 0.2 V, VBE = 0.7 V) BE junction is reverse biased.
The maximum value of Rc (in ) which can be (b) The CB junctions is reverse biased and the
used, is _______ . BE junction is forward biased.
(c) Both the CB and BE junctions are forward
RC biased.
(d) Both the CB and BE junctions are reverse
Rs = 2 k +
= 100 5V biased.
–
+ [EE-2015 : 1 Mark]
5V
–
Q.27 A transistor circuit is given below. The Zener
diode breakdown voltage is 5.3 V as shown
[EE-2014 : 2 Marks]
below. Take base to emitter voltage drop to be
Q.24 In the given circuit, the silicon transistor has 0.6 V. The value of the current gain is _____ .
= 75 and a collector voltage VC = 9 V. Then the
ratio of RB and RC is 10 V
15 V
220
RC 4.7 k
RB
Vc
0.5 mA
5.3 V
470
[EE-2015 : 1 Mark]
[EE-2015 : 1 Mark]
102 Electronics Engineering Analog Electronics
10 k
+12 V a
+
Differential 10 k
15 V 1k
amplifier
– + RTh
10.7 V
1 µA
1 mA –
b
[EE-2018 : 2 Marks]
V Vo
given that, VCE = CC . The transistor has = 29
2 W 10 µm
=
and VBE = 0.7 V when the B-E junction is forward L 1 µm
biased.
VCC = 10 V
(a) 2 V (b) 500 mV
(c) 100 mV (d) 600 mV
4R
RB [EE-2019 : 2 Marks]
SECTIO N -B VCC
Rc
R1 (a) increases (b) decreases
Vo
Cc (c) is unaffected (d) drops to zero
Vi [EE-2001 : 1 Mark]
C1
Q.3 The magnitude of the mid-band voltage gain of
R2
the circuit shown in figure is (assuming hfe of
Re Ce the transistor to be 100)
+VCC
1k
(a) 1 (b) h fe C
Vo
(1 + h fe ) Re (1 + h fe ) Re 10 k
(c) (d) 1 + hfe = 100
hie hie C
[EE-1996 : 1 Mark]
Vi
1k C
Q.2 In the single stage transistor amplifier circuit
shown in figure, the capacitor CE is removed
then the ac small signal mid-band voltage gain
of the amplifier (a) 1 (b) 10
(c) 20 (d) 100
[EE-2014 : 1 Mark]
104 Electronics Engineering Analog Electronics
Answers
EC BJT Analysis
9. (5) 10. (1) 11. (c) 12. (c) 13. (d) 14. (Large) 15. (1) 16. (3.75)
17. (c) 18. (a-2, b-5, c-4) 19. (b) 20. (a) 21. (d) 22. (c) 23. (b)
24. (d) 25. (b) 26. (c) 27. (a) 28. (a) 29. (c) 30. (d) 31. (a)
32. (c) 33. (b) 34. (d) 35. (b) 36. (a) 37. (a) 38. (a) 39. (c)
40. (b) 41. (c) 42. (d) 43. (b) 44. (c) 45. (b) 46. (a) 47. (b)
48. (b) 49. (a) 50. (d) 51. (d) 52. (a) 53. (b) 54. (b) 55. (b)
56. (a) 57. (c) 58. (c) 59. (d) 60. (c) 61. (b) 62. (–233.6) 63. (34.72)
64. (1.07) 65. (b) 66. (b) 67. (b) 68. (9.4) 69. (b) 70. (0.50) 71. (83.15)
72. (–1) 73. (2.04) 74. (d) 75. (598.68) 76. (0.5) 77. (0.902) 78. (128) 79. (6)
Solutions
EC BJT Analysis
1. (b) 3. (d)
Cascade amplifier is the common-emitter C
followed by common base configuration. IC
2. (c)
B
Ic IB
gm =
VT
So, if Ic then gm , gm Ic
E
So, if the quiescent collector current Ic increases
then the transconductance gm also increases. So, overall of the composite transistor,
IC
= = 1+ 2+ 1 2
IB
= 10200
GATE Previous Years Solved Paper 105
4. (d) 6. (a)
In the BJT self bias circuit or potential divider
circuit provides the maximum bias stability.
7. (b)
RE
>> 1 ,
Vin = V gs RB
VCC
IC
gm = RC
Vgs
RTh
IC = IE = IE
1+ +
Vbe –
VTh
IE Re
1+ IE
gm = =
Vgs (1 + ) Vgs
ID = IE
I Simplified self bias circuit using Thevenin
gm = × D = gm theorem.
(1 + ) Vgs 1 +
Thevenin open-circuit voltage,
99
= × 2 mA/V VCC R1
1 + 99 VTh =
R1 + R2
gm = 1.98 mA/V
Thevenin internal resistance,
5. (d) R1 R2
RTh = R1 R2 = = RB
R1 + R2
Apply KVL to input mesh,
10 k 58 k 1/hoe 5k VTh = IBR + Vbe + IERE
Put, IE = IB + IC
VTh = IBRB + Vbe + (IB + IC) RE
Differentiate w.r.t. IC, keeping and Vbe constant,
Z01 = 20 k Zo
IB
Output admittance, 0 = ( RB + RE ) + RE + 0
IC
h fe hre
Y 0 = hoe IB RE
hie + Rs =
IC RB + RE
3 100 × 0
= 0.05 × 10 1+
2 × 10 3 + 10 × 10 3 S= Ib
Y 0 = 0.05 × 10–3 1
Ic
1 1
Z 01 = = = 20 k 1+
Y0 0.05 × 10 3 S=
Output impedance, RE
1+
RB + RE
Z 0 = Z01 5k
>> 1
20 × 5 RE
= 20 k 5k = =4k >> 1
20 + 5 RB + RE
106 Electronics Engineering Analog Electronics
So, IC = IE
So, the current through 1 k resistance, +
I = 5 mA Vo
470 –
VDC = 10 – IR
= 10 – 5 × 103 × 1 × 103
VDC = 5 V
Vo I B (1 + h fe ) RE
AV = = 1
10. Sol. Vi I B [ hie + (1 + h fe )] RE
I 13. (d)
6.5 k 2k
DB
f =
WB2
22. (c)
Loop-1
1k Upper 3-dB frequency,
10 k
0.35
B.W. = f H =
tr
23. (b)
1k
Loop-2
A22 + A32 + ....
IC cannot be 5.32 mA because IC = 5.32 mA will A1
make VCE negative which implies transistor is The total harmonic distortion is,
in saturation.
A22 + A32 + ....
Through KVL, T.H.D. =
A1
12IB + 2IC = 11.2 (Loop-1)
10IB – IC = 0.6 (Loop-2) 25. (b)
Upon solving, IC 3.75 mA
1 1 1 1
= + +
17. (c) B 1 2 3
io I B1 , Vi = I B1 r 32. (c)
I B1 IC h fe = gm r
io
= = gm1 = 1 (as IC = I B )
vi I B1 r vi 1 1 33. (b)
fL = 20 Hz
28. (a)
fH = 1 kHz for single stage
Common mode gain, For cascaded stage,
VC = ACVi (Vi1 = Vi2 = Vi ) fL 20
fL = =
If Re is infinite then because of symmetry of 1/ n 1 /3
2 1 2 1
figure, VC becomes zero, = 39.2 Hz
ie1 = ie2 = 0 1/ n
fL = f H 2 1 = 0.5 k
ib2 << ic2
37. (a)
So, ic2 ie2
VCE = VCC – ICR2
3 = 6 – 1.5 mA × R2
30. (d)
1.5 mA × R2 = 3
15 V R2 = 2k
RC IC 1.5 mA
IB = = = 0.01 mA
150
RTh
When, = 200
10/3 IC = IB
5V VTh (as R1 is same IB remains same)
430 = 0.01 mA × 200
IC = 2 mA
VCE = VCC – ICR2
R2VCC 5
VTh = = × 15 = 5 V = 6 – 2 mA × 2 k
R1 + R2 15
VCE = 2 V
Since, is large,
38. (a)
IB 0, RTh = 5 10
VCE = VCC – ICRC
V 0.7 0.2 = 3 – IC × 1 k
IC = Th
RE IC = 2.8 mA
VTh 0.7 5 0.7 IC 2.8 mA
= = = , IB = C
=
RE 0.430 k IB 50
4.3 = 0.056 mA = 56 µA
= = 10 mA
0.430 k
39. (c)
31. (a) 5V
gm 2.2 k
Ai =
gb e + j (C e + Cc ) 4/5 k
where, Ce and Cc are the transistor capacitances
so, at high frequencies the current gain of 1V
300
bipolar transistor drops due to the transistor
capacitors.
GATE Previous Years Solved Paper 109
R2 1 44. (c)
VTh = × VCC = × 5 = 1 V
R1 + R2 5 Drawing DC equivalent circuit, the capacitor is
4 treated as open-circuit.
RTh = R1 R2 = k
5 12 V
1 0.7 RC
IC = 1 mA 1k
0.3 k
Rf IE
(Q is large IB 0)
VCE = VCC – ICRC – IERE 53 k +
(IE = IC as IB 0)
IC VCE
VCE = 5 – 2.2 × 1 – 0.3 × 1 IB
VCE = 2.5 V –
41. (c)
When two terminals of a transistor are shorted Applying KVL in base-emitter loop.
it acts as diode, Applying KVL in base-emitter loop,
12 – IERC – IB Rf – 0.7 = 0
VD
VT IE
I = Io e 1 12 – 0.7 = IE I k + 53 k
( + 1)
11.3 11.3
0.7 IE = =
3 53 1.87 k
= 10 13
e 1 × 26 × 10 1 1+ k
61
= 6.046 mA = 6 mA
= 49 mA VCE = VCC – IERC
= 12 – 6 mA × 1 k
42. (d) = 6V
Only common-mode gain depends on RE and
differential mode gain is independent of RE. 45. (b)
When increases by 10%, new = 66
43. (b)
11.3
IE = IC + IB IE = = 6.31 mA
53
= IB + IB = ( + 1) IB 1+ k
67
KVL in input loop gives,
VCE = VCC – IE × RC
VCC – VBE = IBRB + IERE
= 12 – 6.31 mA × 1 k
= IBRB + ( + 1) IBRE
= 5.7
VCC VBE % change in,
IB =
RB + ( + 1) RE
6 5.7
VCE = × 100 = 5%
20 0.7 6
=
430 k + 51 × 1 k
46. (a)
IB = 40 µA
Given circuit is a voltage shunt feedback
IC = IB = 50 × 40 µA
amplifier.
= 2000 µA = 2 mA
So, the approximate voltage gain is,
VC = VCC – ICRC
= 20 – 2 mA × 2 k Rf 53 k
Avf = = = 10
VC = 16 V Rs 5.3 k
110 Electronics Engineering Analog Electronics
9.8 VTh
= 0.9 mA IE 2.3
11 k
56. (a)
Q1 Q2
Whenever we use a bypass capacitor in parallel
( 1 = 700) ( 2 = 715) RE in a BJT biased with “common emitter with
RE” then it always increases voltage gain. As
compare to “CE with RE without capacitor”.
–10 V Hence only answer (a) is possible,
To calculate Ii, 1 1
and =
=
9.3Ii + 0.7 = 0 – (10) = 10 LC 10 × 10 6 × 10 9
Ii = 1 mA = 10 M rad/sec
Since the emitter area of transistor Q1 is half and gain is maximum at resonance frequency.
that of transistor Q2.
57. (c)
I
So, Ii = o In active region,
2
–5 – 0.7 – 4.3IE = –10
Therefore, Io = 2 mA
10 5.7 4.3
IE = = = 1 mA
54. (b) 4.3 4.3
Equivalent model of the given circuit is shown IC = IE = I + 0.5 mA = 1 mA
below: I = 0.5 mA
C2 5V
B Ib C
0.5 mA
Rs I
VC
RB hie +
Ib RC RL
+ Q1 0.7 Vsat
+ 5 µF
Vs –5 V t=0
–
– 0.7 V –
active
E
–10 V
100 In saturation region:
h ie = = = 259
gm 0.3861 VC – 0.7 – 4.3 × 1 = –10
The resistance seen by the source Vs, VC = –5 V
Rin = Rs + ( RB hie ) q = CVC
= –5 × 10–6 × 5 V
93000 × 259 = –25 × 10–6
= 1000 +
(93000 + 259) and q = it, I (0 – t) = –25 × 10–6
Rin = 1000 + 258 = 1258 25 × 10 6
t= = 50 msec
0.5 × 10 3
112 Electronics Engineering Analog Electronics
KVL : R2
1.2 = 3 ×
–13.7 + 12 × 101IB × 100IB + VBE = 0 60 + R2
1312IB = 1 72 + 1.2 R2 = 3 R 2
IB 0.01 mA 1.8 R2 = 72
IC = IB = 1 mA R 2 = 40 k
IC
gm = = 38 m 62. Sol.
VT
100 12 V
r = = = 2.63 k 12 V
gm 38 m
Apply Miller’s theorem to 100 k resistor, 5k 5k
33 k
100
Rm = 8.25 k
1 Av
100
Rn = 100 k 11 k 3V
1 1.01 1.01
1
Av
V0
= gm RL = 38 × (12 100) By applying KVL in input loop, we get,
V1
3 = 8.25 k IB + 0.7 + 1.10 k IE
= –407.14
GATE Previous Years Solved Paper 113
10 V
where, re is given by
VT 25 mV
re = = = 11.36 RL
I E 2.2 mA
V BE = 0.7 V
Vo = –5 ib ...(i) 50 k
5V V CEsat = 0.2 V
Vi = 2.27 k ib + 0.01 k (ib + ib) RB = 50
S
...(ii)
From equations (i) and (ii), we get
Vo 5 k × 200 Assume the transistor is in active region,
= = 233.6
Vi 4.28 k
63. Sol.
50 k
R 01 R 02 5V
+
+ IBactive
+ 0.7 V –
+
Vin R in1 + AV V2 Rin2 + AV V RL Vo
– 01 – 02 in
–
–
– 5 0.7
IBactive = = 86 µA
50 k
Vo RL
= ...(i) ICactive = IBactive
AVo2 × V2 RL + Ro2
= 50 × 86 µA = 4.3 mA
AVo1 × Vin Rin 2 Assume, Re = 1 k
where, V2 = ...(ii)
Rin 2 + Ro1 10 V
3k 4.3 mA
ON R1 5k
VC = –2.9 V
50 k 1 µF
5V vi
1 µF
VB = 0.7 V vo
R2 10 k
RE 1k
It is in active.
66. (b)
DC analysis,
For unbypassed RE,
VCC × R2 12 × 10 k
R i = re + (1 + ) RE (VB)q = = =8V
R1 + R2 15 k
AI RL
and Av = (VE)Q = VB – 0.7 = 8 – 0.7 = 7.3 V
Ri
(VCE)Q = (VC)Q – (VE)Q
67. (b) = 12 – 7.3 = 4.7 V
AC equivalent circuit for given common
collector amplifier is, 4.7 V
(VCE )Q
+ VCE = Vo
re ib 4.7 V
Vin
Vo Vo(p – p) = 2 × 4.7 = 9.4 V
RE 70. Sol.
– The input impedance of CB-amplifier is,
Z i = re
Vin = reib + (1 + ) ibRE ...(i) So, according to given condition,
Vo = (1 + ) RE ib re = 50
Vo (1 + ) RE VT
Then, = = 50
Vin re + (1 + ) RE
IC
25 mV
Vo RE RE IC = = 0.50 mA
= = 50
Vin re + RE re + RE
The condition for small signal voltage gain to 71. Sol.
be nearly constant is, VBE2
R E >> re
I2 = I s e VT
V
R E >> T VBE2 = V2
IC
VBE1
ICRE >> VT
I1 = I s e VT
GATE Previous Years Solved Paper 115
V1 V2
2.5 V
I1 VT
= e
I2
Since, VT at 27° is 26 mV then VT at 50° is +
Loop-1
VCE 1
27.99 mV. +
0.7 V –
Thus, V12 = V1 – V2 – + 0.7 V
= 83.15 mV – IB2
10 k
72. Sol.
V C2
1V
Both the transistors are biased at the same 1k IC2
collector current thus their transconductance
will be same, the small signal equivalent circuit
is,
Vout Q1 : VCB = 0
+
We know,
V gm1Vi 1/gm2
VCB1 + VBE1 = VCE1
VCE1 = VBE1 = 0.7 V
–
KVL to loop 1,
–2.5 + VCE + 0.7 + IB × 10 k +1V=0
1 2
gm1 = gm2 2.5 1.4 1
IB = = 0.01 mA
Thus, Vo = –Vi
2 10 k
So, gain equal to –1. IC = 2 I B2 = 0.5 mA
2
75. Sol.
VT I 2 0.7
R2 = ln 1 IB = = 0.10833 mA
I2 I2 12
3 3 5 0.2
26 × 10 1 × 10 IC(sat) = = 1 mA
= 6
ln 6 4.8
100 × 10 100 × 10
IC (sat)
= 598.67 IB IB(min) =
116 Electronics Engineering Analog Electronics
1 mA +18 V
IB
RC 4k
1
0.10833 IC
and min = 9.23 RTh +
VTh VCE
min IB +
= = 0.902 VBE – –
min 1 + min
RE 2k
78. Sol.
IE
12 V
RC 2k 16
VTh = × 18 V = 4.8 V
16 + 44
IC
IERE = VTh – VBE – IBRTh
RTh
IB = 0 A (Q = 1))
VTh
IB = 0 + So, IERE = 4.8 – 0.8 = 4 V
VBE –
4
RE 2k IE = mA = 2 mA
2
IC = IE = 2 mA (Q = 1)
VCE = VCC – ICRC – IERE
By taking the Thevenin’s equivalent between = 18 – (2 × 4) – (2 × 2)
base and ground nodes, the given circuit can be = 6V
reduced as follows for DC analysis:
80. Sol.
12 × 47
VTh = = 4.7 V In AC equivalent circuit, Q2 becomes diode-
73 + 47
connected transistor because collector and base
Neglecting base current (IB = 0),
get shorted.
V VBE 4.7 0.7
IE = IC = Th = E
RE 2
IC = 2 mA
Q2 1/gm
IC 2
gm = = = 80 m
VT 25
Voltage gain,
Computer AC equivalent circuit is as shown
Av = gm ( RC RL )
below.
= 80(2 8) = 128
Av = 128 1k
Q1
79. Sol.
By taking the Thevenin’s equivalent between Vs
1/gm
base and ground nodes, the given circuit can be
reduced as follows:
GATE Previous Years Solved Paper 117
RL = 11 k
0.465
= × 5000 = 89.423
1 26
RE =
gm
82. Sol.
100 × 1
Av = = 50
1+1 R2
9× =4
Av = 50 R2 + 1 k
9R 2 = 4R2 + 4 k
81. (d) 5R 2 = 4 k
10 0.7 4000
IEQ = = 0.465 mA R2 = = 800
20 5
Answers
EE BJT Analysis (Section-A)
10. (c) 11. (c) 12. (d) 13. (d) 14. (d) 15. (b) 16. (b) 17. (d)
18. (b) 19. (d) 20. (b) 21. (a) 22. (d) 23. (22.32) 24. (105.13) 25. (0.75)
26. (c) 27. (19) 28. (172.7) 29. (d) 30. (90.09) 31. (d) 32. (c) 33. (d)
Solutions
EE BJT Analysis (Section-A)
1. (c) 5
VTh = × 20 V = 6.67 V
20 V 15
10 × 5
10 k RTh = = 3.33
10 + 5
Vc
VTh – Ib RTh – 0.7 – ( + 1) Ib × 10 k = 0
RTh
5.97 = Ib (3.33 + 101 × 10) k
Ib = 5.891 µA
VTh Ic = Ib = 0.589 mA
10 k
Vc = 20 – 10 × Ic
= 14.11 V 14 V
118 Electronics Engineering Analog Electronics
2IB
33 k = 1000 = 1000
12 V
4V
3.3 k
–5 V
GATE Previous Years Solved Paper 119
+
Ic = IR IR
+2
Vin
(Because is very large) gmVGS rd R Vo
Hence, Ic1 = Ic2 = IR = 4.3 mA
12. (d) –
h fe
Input resistance = = Since, rd >> R
gm gm All current will pass through R,
50 Vout = –gmVGS R
= =5k
10 × 10 3 = –1 × 10–3 × 2 × 10–3 × 10 × 10–3
But overall input resistance seen from source is = –20 mV
RIN = 10 10 5 = 2.5 k Vout 20 mV
Voltage gain = = = 10
Vin 2 mV
13. (d)
18. (b)
Here, VS = +4 V
VG = 0V Assume BJT is in active region and we neglect
VT = –1 V ICBO,
Therefore, VSG = 4V 12 V
VSD = VS – VD 2.2 k
= 4 – I aR
Now for linear region of operation, 13 k
VSD < (VSG + VT)
4 – Ia R < (4 – 1) 2.78 V
Ia R > 1
–3
10 × R > 1
R > 1000 12 × 15 5 × 100
Vth = + = 2.78 V
115 5
14. (d)
Rth = (15 100)
MOSFET is N-channel. Gate through source is
so connected that MOSFET will be in enhance 15 × 100
= = 13 k
mode and so conductivity of the channel will 115
be increased very much and effectively ‘ ’ Ic = Ib
terminal act as short circuited. So Vab = 0 V. 2.78 0.7
But, Ib = = 0.16 mA
13
15. (b)
Ic = 4.8 mA
Ic 12 0.2
= But, Ic(sat) = = 5.36 mA
Ib 2.2 k
3
1 × 10 As, Ic(sat) > Ic(active)
Ib = = 10 µA
100 BJT is in active region.
120 Electronics Engineering Analog Electronics
1k IR +5 V
P
IC Equivalent A.C. model will be taking,
IC h ie = 1 k
h fe = = 100
i 10 k ib
Q1 Q2
IB IB
Vi 100
k Vin hie hiei b 12 k
1 Av
–5 V
100
100 k as Av
1
1
Av
Ic 1 V VBE2
= exp BE1 = e0 = 1
Ic 2 VT h fe ib × (100 12) k
Vo
AV = =
Since for both are same, therefore, Vin hie × ib
Ib1 = Ib2 = Ib
100 × 10.71 k
Applying KVL to loop as shown, AV = = 1071.42
1k
0 0.7 0.7 ( 5)
IR = = 3.6 mA Vi = hie ib + 104 i
1k
= 103 ib + ib[104 + (1072.42) × 100]
By KCL, IR = Ic + 2Ib
Ic Vo h fe ib × 10.7142 × 103
= Ic + 2 AVS = =
Vi ib [10 3 + 10 4 + 10 2 × 1072.42]
= –9.06
Ic = × IR
+2
AVS = 9.06 10
IR (Because is very large)
GATE Previous Years Solved Paper 121
24. Sol.
Consider the circuit shown in figure,
15 V
Case-II :
When, VC = 4 V
IE = IB + IC
RC RC
RC
10 4
RB IB iC = ...(iii)
RC
VC(9 V) From equation (iii) and (i),
IC
10 4 10 2
=
RC RC
+
0.7 V RC 6 3
– = = = 0.75
RC 8 4
VC = 9 V 27. Sol.
15 9 10 V
so, = IE
RC
6 220
= IE I1 4.7 k
RC
IB
9 0.7 VB
and = IB
RB
VE
8.3
so, = IB 5.3 V I2 = 0.5 mA
RB IE 470
IE 6 × RB
so, =
IB RC × 8.3
RB × 6 VB = 5.3 V
( + 1) = VE = VB – 0.6 = 4.7 V
RC × 8.3
VE
RB IE = = 10 mA
= 105.13 470
RC
122 Electronics Engineering Analog Electronics
10 5.3 5 = 30IB × 4R + 30 × IB × R
I1 = = 1 mA
4.7 k 5 = 150IB × IB × R ...(ii)
IB = I1 – I2 = 0.5 mA Using equation (i) and (ii),
IBRB = 9.3 – 5 = 4.2
IE
= + 1 = 20 and simultaneously putting value of IBR from
IB
equation (ii) in equation (i),
= 19
R
9.3 = I B R 150 + B
28. Sol. R
5 R
+12 V 9.3 = 150 + B
150 R
RB
279 = 150 +
Ra R
I0 = 1 µ A
RB
IR = 1 mA
= 129
R
Q1 Q2 30. Sol.
–12 V
29. (d)
In input loop, 10 k
1k
10 = (1 + ) Ib × 4R + IB × RB + 0.7
+ (1 + ) IB × R
Rth
10 = 30IB × 4R + IB × RB + 0.7
+ 30 × IB × R 10 k
9.3 = 150 × IB × R + IB × RB ...(i) Rth = 1 k
1+
Output loop,
= 1k 99.0099
10 = (1 + ) × IB × 4R + 5 V
+ (1 + ) × IB × R Rth = 90.09
GATE Previous Years Solved Paper 123
Answers
EE BJT Analysis (Section-B)
Solutions
EE BJT Analysis (Section-B)
1. (d) 3. (d)
When Ce is unbypassed, AC model,
h fe Rc Vo
AV 1 = 10 k
hie
Vi hfeIB 10 k
When Ce is bypassed,
h fe Rc
AV2 =
hie + (1 + h fe ) Re Zi = 10 k
Z i = 10 k
AV 1 hie + (1 + h fe ) Re 1 + h fe
= = 1+ Re Mid-band voltage gain,
AV 2 hie hie
A1 RL
Av =
2. (b) Zi
h fe RL
AV 1 1 + h fe Av =
= 1+ Re Zi
AV 2 hie
100 × 10 k
AV 1 = = 100
>1 10 k
AV 2
AV2 < AV1 Av = 100
41 FET and MOSFET Analysis
VG = 3 V
signal output V1 and V2 obey the relationship
Transfer
RD
VGS S
1V VS = 1 V
+
V1
(a) 1 V and the device is in active region.
+
+ (b) –1 V and the device is in saturation region.
V2 –
Vi –
RD/2 (c) 1 V and the device is in saturation region.
–
(d) –1 V and the device is in active region.
[EC-2005 : 2 Marks]
V V2
(a) V1 = 2 (b) V1 =
2 2 Q.5 In the CMOS inverter circuit shown, if the
(c) V1 = 2V2 (d) V1 = –2V2 transconductance parameters of the NMOS and
[EC-1998 : 1 Mark] PMOS transistors are:
T2 I
2.5 V
Vi Vo
NMOS
T1
GATE Previous Years Solved Paper 125
3V
The equivalent gm of the pair is
Vo
(a) the sum of individual gm’s of the transistors.
(b) the product of individual g m ’s of the VG
transistors.
(c) nearly equal to the gm of M1.
(d) nearly equal to the gm/go of M2.
[EC-2008 : 2 Marks] Q.8 For small increase in VG beyond 1 V, which of
the following gives the correct description of the
Q.7 For the circuit shown in the following figure, region of operation of each MOSFET?
transistors M1 and M2 are identical NMOS (a) Both the MOSFETs are in saturation region.
transistors. Assume that M2 is in saturation and
(b) Both the MOSFETs are in triode region.
the output is unloaded.
(c) n-MOSFET is in triode and p-MOSFET is in
VDD saturation region.
(d) n-MOSFET is in saturation and p-MOSFET
RE is in triode region.
Ibias
V out [EC-2009 : 2 Marks]
VDD = +12 V
Q.18 What is the voltage Vout in the following circuit?
VDD
R1 10 k
R2 10 k ID
10 k
Vout
V SS = –5 V
[EC-2014 : 2 Marks]
[EC-2016 : 2 Marks]
M2
Q.20 In the circuit shown in the figure, the channel
length modulation of all transistor is non-zero
( 0). Also, all transistor operate in saturation
2V M1 and have negligible body effect. The ac small
signal voltage gain (Vo/Vin) of the circuit is
[EC-2015 : 2 Marks]
128 Electronics Engineering Analog Electronics
[EC-2016 : 2 Marks]
Vout
S
W
µpCox = 30 µA/V2; = 10
L pMOS
Current through the nMOS transistors can be
µn and µp are the carrier mobilities, and Cox is
modeled as:
the oxide capacitance per unit area. Ignoring
W 1 2 the effect of the channel length modulation and
IDS = µC ox (VGS VT )VDS VDS
L 2 body bias, the gain of the circuit is _____
for VDS VGS – VT (rounded off to 1 decimal place).
W (VGS VT )2
I DS = µC ox for VDS VGS – VT
L 2
130 Electronics Engineering Analog Electronics
Vin R
gm, rds
[EC-2019 : 2 Marks]
RD = 20 k
W /L = 2 W /L = 3
Vout
M1
VGS
[EC-2019 : 2 Marks]
Q.29 An enhancement MOSFET of threshold voltage The channel length modulation coefficient is
3 V is being used in the sample and hold circuit ignored. If the gate-to-source voltage VGS is 1 V
given below. Assume that the substrate of the to keep the transistor at the edge of saturation,
MOS device is connected to –10 V. If the input then the threshold voltage of the transistor
voltage Vi lies between ± 10 V. The minimum (Rounded off to one decimal place) is _____ V.
and the maximum values of VG required for
[EC-2021 : 2 Marks]
proper sampling and holding respectively, are
Q.32 In the circuit shown in the figure, the transistors
Vi Vo
M1 and M2 are operating in saturation. The
channel length modulation coefficients of both
transistors are non-zero. The transconductance
VG of the MOSFETs M1 and M2 are r01 and r02,
respectively.
GATE Previous Years Solved Paper 131
1 5V
(a) gm1 r01 r02
gm 2
1
(d) gm 2 r02
gm1 –5 V
[EC-2021 : 1 Mark]
Q.36 Consider an ideal long channel nMOSFET acts as a linear amplifier. vi is the small signal
(enhancement mode) with gate length 10 µm ac input voltage. vA and vB represent the small
and width 100 µm. The product of electron signal voltages at the nodes ‘A’ and ‘B’,
mobility (µn) and oxide capacitance per unit area respectively. The value of v A/v B is ______
(Cox) is µnCox = 1 mA/V2. The threshold voltage (Rounded off to one decimal place).
of the transistor is 1 V. For a gate-to-source VDD
voltage, VGS = [2 – sin(2t)] V and drain-to-source
voltage VDS = 1 V (substrate connected to the 4k
source), the maximum value of the drain-to-
A
source current is _______ .
(a) 40 mA (b) 20 mA
(c) 15 mA (d) 5 mA Vi B
[EC-2022]
2k
VGG
Q.37 Consider the circuit shown with an ideal long
channel nMOSFET (enhancement mode,
substrate is connected to the source). The [EC-2022]
transistor is appropriately biased in the
saturation region with VGG and VDD such that it
Answers
EC FET and MOSFET Analysis
9. (d) 10. (c) 11. (a) 12. (b) 13. (d) 14. (c) 15. (0.9) 16. (1.5)
17. (3) 18. (c) 19. (57.87) 20. (c) 21. (2) 22. (c) 23. (c) 24. (c)
25. (0.422) 26. (0.225) 27. (–900) 28. (6) 29. (b) 30. (d) 31. (0.5) 32. (c)
33. (c) 34. (c) 35. (c) 36. (c) 37. (–2)
GATE Previous Years Solved Paper 133
Solutions
EC FET and MOSFET Analysis
1. (c) 6. (c)
r I D1
2gm and d gm1 =
2 Vi
ID1 = ID2
rd I D2 I D1
µV gs I out
gm = = =
Vi Vi Vi
rd gm = gm1
µV gs
7. (b)
rd/2 µV gs It is a current mirror circuit,
r IG1 = IG2 = 0
So, rd = d
2 Ix = Is
µ = µ = gm rd
Ibias = Is + IG1 + IG2
rd
= gm = gm rd
2 = Is + 0 + 0
gm = 2g m Ix = Ibias
2. (c) 8. (d)
V1 = 2V2 When VG is little higher than 1 V.
V1 = IDRD • For n-MOSFET:
IS = ID VGSn = VG = 1+ V (1+ Little higher than 1)
R I R V VGSn – VTn = 0+ V (0+ Little higher than 0)
V2 = Is D = D D = 1
2 2 2 • For p-MOSFET:
So, V1 = 2V2
VSGP = VDD – 3 V = 2 V
3. (a) VSGP VTP = 1 V
Statement-2 is false because VDS will be less than
VGS = –VT, if Vo = 0. (VGSn – VTn) < (VSGP VTP )
So, n-MOSFET will be in saturation region
4. (c)
and p-MOSFET will be in triode region.
From the graph its clear that,
VTh = 1 V 9. (d)
VGS = 3 – 1 = 2 V When VG = 1.5 V:
VDS = 5 – 1 = 4 V
• For n-MOSFET:
Since, VDS VGS – VT
VGSn = VG = 1.5 V
So, MOSFET is saturation region.
VGSn – VTn = 0.5 V
5. (c) • For p-MOSFET:
VGS for each MOS is 2.5 V. VSGP = VDD – 3 V = 2 V
VT = 1 volt, device parameter K = 40 mA/V2
VSGP VTP = 2 V 1 V = 1 V
K
So, ID = (VGS VT )2
2 (VGSn VTn ) < (VSGP VTP )
= 20(2.5 – 1)2 = 45 µA
134 Electronics Engineering Analog Electronics
So, n-MOSFET will be in saturation region and Hence both MOS will be in saturation,
p-MOSFET will be in triode region. W
ID1 = µnC ox (VGS VT )2
To determine Vo : L
IDSn = ISDP
ID1 = µnCox(4) (4 – Vx)2
2
Kn(VGSn – VTn)2 = K p [2 (VSGP VTP ) VSDP VSDP ]
Similarly, ID2 = µnCox(1) (Vx – 1)2
Given that, Kn = K p
So, (0.5) = 2(1 V) (VDD – Vo) – (VDD – Vo)2
2
But, ID1 = ID2
0.25 = 2(5 – Vo) – (5 – Vo)2
µnCox(4) (4 – Vx)2 = µnCox(1) (Vx – 1)2
0.25 = 10 2 Vo 25 + 10 Vo Vo2 On solving, Vx = 3 Volt
14. (d) 1 mA
ID1 = × (2 1)2 = 1 mA
We know that, V2
ID = Kn(VGS – VT)2 [Q VDS > VGS – VT] Now, transistor M2,
0.5 mA VDS = 0 V
So, Kn = = 0.78 mA/V So, it will work into saturation region and same
(1.6 0.8)2
current will flow,
Therefore, for VD = 2 V
ID = 0.78(2 – 0.8)2 = 1.123 mA ID2 = ID = K (VGS VTN )2
1 2
1 W 19. Sol.
= µnC ox (VGS Vt )2
2 L With respect to A.C.
= 0.1(5 – 2)2 = 0.9 mA
16. Sol.
50 pF 1k
For saturation, Vo
ID = Kn(VGS – Vt)2 C
µnC ox W 5k
ID = (VGS Vt )2 Vin
2 L
1
ID = × 100 × 10 6 × 2 (Vo )2
2 Taking Miller’s equivalent and assume, ro =
6
ID = 100 × 10 Vo2 ...(i) 5k
Vo2 + Vo 2 =0
Av = –gmRD
Vo = 1 V
= –0.01 × 103 = –10
VDS = VGS – Vt
Small signal input pole frequency,
Vin = 1.5 V
1
= 3 12
17. Sol. 2 × 5 × 10 × 50 × 10 (1 + 10)
Lower transistor (M1) to work in saturation, = 57.87 kHz
VDS1 = VGS1 VTN
136 Electronics Engineering Analog Electronics
Vo –
Vin M1
S
So, when the channel length modulation effect
is significant, the MOSFET can be modelled as
S3
Vgs 3 = 0 G3 a current source with finite output impedance.
G3
+ 23. (c)
D2
gm3Vgs3 r03 Vgs2 gm2Vgs2 r02
– 3V
D3
G1 D1 +
V01
Vin 2.5 V M2 V DS2
+
+ –
Vgs1 gm1Vgs1 r01 VGS2 –
–
+
2V M1 V DS1 = Vx
+ –
VGS1 –
Node equation at P1 :
Vo Vo Vo
gm1Vgs1 + + + gm2 Vgs2 = 0 VGS1 = 2 V
r01 r03 r02
1 1 1 VGS2 = 2.5 – Vx
Vo + + gm2 + = gm1Vin
r01 r02 r03 VDS1 = Vx
Vo 1 VDS2 = 3 – Vx
Av = = gm1 r01 r02 r03
Vin gm2 Assume both MOSFETs in saturation and equate
their currents,
21. Sol.
I DS1 = I DS2
8× 5
VGS = 1 × ID = 5 ID
8 kn k
(2 1)2 = n (2.5 Vx 1)2
(Here ID is numerically in mA) 2 2
ID = 5 – VGS ...(i) After solving, Vx = 0.5 V, 2.5 V
µnC ox W Vx cannot be 2.5 V.
ID = (VGS VT )2
2 L Because this will make M2 OFF.
1 2 Hence Vx may be 0.5 V.
5 – VGS = (VGS 1)
2 M1 is in linear region.
10 – 2VGS = 2
VGS + 1 2 VGS M2 is in saturation region.
2 = 9 VGS = 3 V To verify further,
VGS
ID = 5 – 3 = 2 mA
I DS1 = I DS2
GATE Previous Years Solved Paper 137
+ + Ix 3Vx2 6Vx + 2 = 0
V gm1V 2 r02
2
2
–
Vx2 2Vx + =0
Ix 3
0A
Vx Vx 8
+
4
+
Vx = 1 ± 3 = 1± 1 V
V 1=0V gm2V ro1 Ixr01
1 4 3
–
– – VGS2 = (2 – Vx) VT
(1 – Vx) 0
V = –Ix r01 1
2 So, valid value, Vx = 1 = 0.4226 V
3
(Vx I x r01 )
Ix = gm2 v 2 + 26. Sol.
r02
Vx IDn = IDp and both will be in saturation.
r0 = = r01 + r02 + r01 r02 gm2 VDD
Ix If, Vin = = 1.5 V = VGSN = VSGP
2
r01 r02 gm2
1 W
(µnC ox ) [VGSN VTN ]2
2 L n
138 Electronics Engineering Analog Electronics
1 W
= (µ pC ox ) [VGSP + VTP ]2 1
2 L p R3 = rds
gm
6 W
100 × 10 [1.5 0.7]2 M3 M2
L n
W 1
= 40 × 10 6 [1.5 0.9]2 R4 =
gm
rds
L p
W M4
2
L n 40 (0.6)
= × = 0.225
W 100 (0.8)2
L p
G2 D2
27. Sol. +
M3 and M4 are identical PMOS transistor and
they have equal current. R4 R3 Vgs rds2
M7 I5 M5 M6 I6
V
VSG3 = VSG4 = DD = 2 V
2 I3
Vdd
µ pC ox W
ISD = (VGS VT )2 V1 = 0
M3 I4 M4 V2 = VDD
2 L p I1 = 1 mA
30 I2
=× 10(2 1)2 = 150 µA
2 W/L = 2 M1 M2 W /L = 3
Now, by using current mirror property all
transistor should have equal current,
IDSN = ISDP = 150 µA
For M1 : I2 ( W / L )2 3
= =
I1 ( W / L )1 2
W
gm1 = 2µnC ox × IDS 3
L × I1 = 1.5 mA
I2 =
2
= 2 × 60 × 5 × 150 = 300 µ M3 is OFF because, V1 = 0 I3 = 0
M2, M3 and M4 from active load for M1. This active
M4 is ON because, V2 = VDD
load in equivalent to resistance rds2 i.e. 6 M . I5 = I4 = I2 = 1.5 mA
GATE Previous Years Solved Paper 139
I6 ( W / L )6 40 VDD = 3 V
= = =4
I5 ( W / L )5 10
ID RD = 20 k
I6 = 4I5 = 4 × 1.5 = 6 mA
Iout = I6 = 6 mA Vout
+
29. (b) M1 VDS
VGS –
Vi Vo
10 V
Edge of saturation,
VDS = VGS – VT
VG VDS = 1 – VT
–10 V
1 W
ID = µnC ox (VGS VT )2
For holding MOSFET should be OFF, 2 L
Vi min –10 V Applying KVL, we can write,
VG – Vi min < 3 VDS = VDD – IDRD
VG < 3 – 10 V –7 V 1
(1 – VT) = 3 × 100 µ × 10(1 VT )2 (20 k)
For sampling, 2
VG – Vimax > 3 1 – VT = 3 – 10(1 – VT)2
VG > 3 + Vimax
= 3 10 10 VT2 + 20 VT
VG > 13
10 VT2 21VT + 8 = 0
30. (d)
32. (c)
Vx
Step-1 : AC model of the given circuit
(All DC sources = 0)
D2
V = –Vx V out
Vin M2 M1
Vx = (Ix – gmVx) rds + IxR
Vx (1 + gm rds) = (rds + R) Ix
S2 Req
V R + rds
RN = x =
VDD = 0
I x 1 + gm rds
Consider the circuit w.r.t M1,
31. (0.5)
µnCox = 100 µA/V2
M1
W
= 10
L Req
= 0
VGS = 1V 1
Req = r01 ...(1)
VT = ? gm1
140 Electronics Engineering Analog Electronics
6 ± 36 + 4 × 15 6 ± 96
Vo = =
G2 D2 Io 2 2
+ + Vo = 1.898 V, –7.89 V
Vo cannot be negative because Vo should lie
Vin Vgs2 gm2Vgs2 RL Vout
between 0 and 4 V.
Vo = 1.898 V
– –
S2 S2 34. (c)
5V
5V V2
33. (c)
pMOSFET
Both MOSFETs are in saturation because drain 1 µF
is shorted to gate,
4V
pMOSFET will provide
V2 = 5 V
W
=5
L
35. (c)
Vo (a) NML = VIL – VOL
NMH = VOH – VIH
W
=1
L when, VTN = VTP
and Kn = K p
VDD
IDSN = ISDP VIT =
2
GATE Previous Years Solved Paper 141
(c) For : Va
VDD VTP Vin VDD PMOS cut-off
(Logic high input) NMOS Linear
(d) Switching speed depends on charging and Vi
discharging of load capacitor for pull up 2k RS
and pull down of output voltage
respectively. (CS in bypass amplifier)
Fast charging and discharging of capacitor
depends on mobility of charge carrier, Va gm RD
Voltage gain, = ...(1)
charging = RPMOS CL
Vi 1 + gm Rs
(to bring output at logic high) Consider Vb as an output, then the small signal
discharging = RNMOS CL model,
(to bring output at logic low)
and also propagation delay,
4k RD
PLH + PHL
p =
2
CL VDD
where, TPLH =
W
µ pC ox (VGS VTP )2 Vi Vb
L
CL VDD 2k RS
TPHL =
W
µ pC ox (VGS VTN )2
L (CD amplifier)
Using average charge model.
Vb gm Rs
Hence, (c) is only correct statement. Voltage gain, = ...(2)
Vi 1 + gm Rs
36. (c) On dividing equation (1) and (2),
VGS = [2 – sin2t] Volt 1V
Va /Vi RD
VGS min = 2–1=1V =
Vb /Vi Rs
VGS max = 2 – (–1) = 3 V
Va 4k
VDS = 1V = = 2
–1 V Vb 2k
VDS < VGS – Vt (Linear)
5 Frequency Response
Amplifiers
ELECTRO NICS EN GINEERIN G The input impedance of the feedback amplifier
with the feedback impedance Z connected as
(GATE Previous Years Solved Papers)
shown will be
Q.1 In a multi-stage RC-coupled amplifier the Z
coupling capacitor
(a) limits the low frequency response.
+ +
(b) limits the high frequency response.
Vi Vo
(c) does not effect the frequency response. N
– –
(d) blocks the d.c. components without effecting
the frequency response.
[EC-1993 : 1 Mark]
1
Q.2 An RC-coupled amplifier is assumed to have a (a) Z 1 (b) Z(1 – K)
K
single-pole frequency transfer function. The
maximum lower cut-off frequency allowed for Z Z
(c) (d)
the amplifier to pass 50 Hz. Square wave with K 1 1 K
no more than 10% tilt is ______ . [EC-1996 : 2 Marks]
[EC-1995 : 1 Mark]
Q.6 The fT of a BJT is related to its gm, C and Cµ as
Q.3 An amplifier has an open-loop gain of 100 and follows:
its lower and upper cut-off frequency of 100 Hz C + Cµ 2 (C + Cµ )
and 100 kHz respectively, a feedback network (a) fT = (b) fT =
gm gm
with a feedback factor of 0.99 is connected to
the amplifier. The new lower and upper cut-off gm gm
(c) fT = (d) fT =
frequencies are at ______ and ______ . C + Cµ 2 (C + Cµ )
[EC-1995 : 1 Mark] [EC-1998 : 1 Mark]
Q.4 An npn transistor has a beta cut-off frequency Q.7 An npn transistor (with C = 0.36 pF) has a unity
f of 1 MHz and common emitter short-circuit gain cut-off frequency fT of 400 MHz at a dc bias
low frequency current gain 0 of 200 at unity current IC = 1 mA. The value of its Cµ (in pF) is
gain frequency fT and the alpha cut-off frequency approximately (VT = 26 mV)
f respectively are (a) 15 (b) 30
(a) 200 MHz, 201 MHz (c) 50 (d) 96
(b) 200 MHz, 1999 MHz [EC-1999 : 2 Marks]
(c) 199 MHz, 200 MHz
Q.8 An amplifier is assumed to have a single-pole
(d) 201 MHz, 200 MHz
high-frequency transfer function. The rise time
[EC-1996 : 1 Mark] of its output response to a step function input is
Q.5 In the circuit shown in figure is a finite gain 35 nsec. The upper –3 dB frequency (in MHz)
amplifier with a gain of K, a very large input for the amplifier to a sinusoidal input is
impedance, and a very low output impedance. approximately at
GATE Previous Years Solved Paper 143
Q.9 An npn BJT has gm = 38 mA/V, Cµ = 10–14 F, Q.12 Which one of the following statements is correct
C = 4 × 10–13 F, and DC current gain 0 = 90. For about an ac coupled common-emitter amplifier
this transistor fT and f are: operating in the mid-band region?
(a) fT = 1.64 × 108 Hz and f = 1.47 × 1010 Hz (a) The device parasitic capacitances behave
(b) fT = 1.47 × 1010 Hz and f = 1.64 × 108 Hz like open-circuits, whereas coupling and
(c) fT = 1.33 × 1012 Hz and f = 1.47 × 1010 Hz bypass capacitances behave like short-
(d) fT = 1.47 × 1010 Hz and f = 1.33 × 1012 Hz circuits.
RD = 10 k
C = 1 µF
Vi M
RL = 10 k
144 Electronics Engineering Analog Electronics
Answers
EC Frequency Response Amplifiers
Solutions
EC Frequency Response Amplifiers
1. (a) 5. (d)
The low frequency of operation of a multi-stage Miller’s Theorem:
RC coupled amplifier is limited by the coupling Miller’s theorem state that if a series impedance
capacitor. Z is connected between the input and output
terminal of a network, then it can be replaced
2. Sol. with a shunt impedance Z1 in the input side
fL and by a shunt impedance Z2 in the output
%Tilt = × 100%
f section of the network.
f × % Tilt Z
fL =
× 100
I1 I2
50 × 10 + +
= = 1.59 Hz
× 100 Vi Vo
N
3. Sol. – –
1 + A = 1 + 100 × 0.99
= 1 + 99 = 100
+ +
fL 100
fL = = = 1 Hz Vi Z1 Z2 Vo
1+ A 100 N
– –
f H = fH (1 + A )
= 100 × 103 × (100) = 10 MHz
If Vi > V2 then I1 flows:
4. (a)
V1 V2 V1 [1 V2 /V1 ] V1 [1 Av ]
fT = f I1 = = =
Z Z Z
f T = 200 × 1 = 200 MHz V1 Z
f = Z1 =
I1 1 Av
f = = (1 + ) f
1 Z
= (1 + 200) 1 = 201 MHz Z1 =
1 K
GATE Previous Years Solved Paper 145
6. (d) 38 × 10 3
1 10. (d)
fT =
2 RC
IC 1 mA
1 IC gm = =
= gm = VT 25 mV
R VT
= 0.04 = 40 mA/V
IC h fe = gm r , hfe =
fT =
2 VT × Cµ
100
r = = 3
= 2.5 k
1 mA gm 40 × 10
Cµ =
2 × 26 mV × 400 × 10 6
11. (a)
= 15 pF
1
8. (b) fL =
2 RC
tr × B.W. = 0.35 1
=
0.35 2 × 3.14 × (10 k + 10 k ) × 1 µF
B.W. = 9
= 10
35 × 10 = 8 Hz
ELECTRO NICS EN GINEERIN G (b) improves the signal to noise ratio at the
output.
(GATE Previous Years Solved Papers)
(c) does not effect the signal to noise ratio at
Q.1 The feedback amplifier shown in figure has the output.
VCC
(d) reduces distortion.
[EC-1993 : 1 Mark]
Q.8 An amplifier has an open-loop gain of 100, an Q.12 The effect of current shunt feedback in an
input impedance of 1 k , and an output amplifier is to
impedance of 100 . A feedback network with (a) increase the input resistance and decrease
a feedback factor of 0.99 is connected to the the output resistance.
amplifier in a voltage series feedback mode. The (b) increase both input and output resistances.
new input and output impedances, (c) decrease both input and output resistances.
respectively, are
(d) decrease the input resistance and increase
(a) 10 and 1 (b) 10 and 10 the output resistance.
(c) 100 k and 1 (d) 100 k and 1 k [EC-2005 : 1 Mark]
[EC-1999 : 2 Marks]
Q.13 The input impedance (Z i ) and the output
Q.9 In a negative feedback amplifier using voltage impedance (Zo) of an ideal transconductance
series (i.e. voltage-sampling, series mixing) (voltage controlled current source) amplifier are
feedback (a) Zi = 0, Zo = 0 (b) Zi = 0, Zo =
(a) Ri decreases and Ro decreases (c) Zi = , Zo = 0 (d) Zi = , Zo =
(b) Ri decreases and Ro increases [EC-2006 : 1 Mark]
(c) Ri increases and Ro decreases
Q.14 In a transconductance amplifier, it is desirable
(d) Ri increases and Ro increases
to have
(Ri and Ro denote the input and output resistance
(a) a large input resistance and a large output
respectively.
resistance.
[EC-2002 : 1 Mark]
(b) a large input resistance and a small output
Q.10 An amplifier without feedback has a voltage resistance.
gain of 50, input resistance of 1 k and output (c) a small input resistance and a large output
resistance of 2.5 k . The input resistance of the resistance.
current-shunt negative feedback amplifier using (d) a small input resistance and a small output
the above amplifier with a feedback factor of resistance.
0.2 is
[EC-2007 : 1 Mark]
1 1
(a) k (b) k Q.15 In a voltage-voltage feedback as shown below,
11 5
which one of the following statements is true if
(c) 5 k (d) 11 k
the gain k is increased?
[EC-2003 : 2 Marks]
+ + +
Q.11 Voltage series feedback (also called series-shunt Vin V1 Ao Vout
– –
feedback) results in –
in output impedances.
(a) The input impedance increases and output
(d) decrease in input impedance and increase
impedance decreases.
in output impedances.
(b) The input impedance increases and output
[EC-2004 : 1 Mark]
impedance also increases.
148 Electronics Engineering Analog Electronics
(c) The input impedance decreases and output Q.18 The feedback topology in the amplifier circuit
impedance also decreases. (the base bias circuit is not shown for simplicity)
(d) The input impedance decreases and output in the figure is
impedance increases. VCC
[EC-2013 : 1 Mark]
RC Io
Q.16 In the ac equivalent circuit shown in the figure,
if iin is the input current and RF is very large, the Vo
type of feedback is
RS
RE
RD Vs
RD
Vout
Answers
EC Feedback Amplifiers
9. (c) 10. (a) 11. (c) 12. (d) 13. (d) 14. (a) 15. (a) 16. (b)
17. (a) 18. (b) 19. (c) 20. (d) 21. (800)
Solutions
EC Feedback Amplifiers
1. (c) 5. Sol.
Emitter is output node, it is voltage sampler 1-a, 2-b
voltage shunt feedback. Voltage-series configuration increases the input
impedance,
2. (a, c)
R if = Ri(1 + A ) = Ri(1 + Av )
For identical operational amplifiers, gain- Current-shunt configuration decreases the input
bandwidth product is constant, impedance,
G.B.W. = Constant
Ri Rf
A1 × BW1 = A2 × BW2 R if = =
1+ A 1 + AI
A1 × BW1
BW2 =
A2 6. (a)
1 × BW1 BW2 Shunt-shunt feedback amplifiers has very low
= =
20 20 input and very low output impedance,
So, as compare to the unity gain amplifier with
Ri Ri
gain twenty has less bandwidth. R if = =
1+ A 1 + Rm
3. (b, d) Ro Ro
Rof = =
Negative feedback in amplifiers 1+ A 1 + Rm
(b) improves the signal to noise ratio at the
output. 7. (a)
(d) reduces distortion. A
Af =
1+ A
4. (b)
Current-series feedback amplifiers has very 8. (c)
high input and very high output impedances, A = 100, = 0.99, 1 + A = 100
R if = Ri (1 + A ) = Ri (1 + Gm ) For voltage series, Ri and Ro by 1 + A
Rof = Ro(1 + A ) = Ro (1 + Gm )
150 Electronics Engineering Analog Electronics
5k
– (a) Hartley oscillator with foscillation = 79.6 MHz
Vo
+ (b) Colpitts oscillator with foscillation = 50.3 MHz
R (c) Hartley oscillator with foscillation = 159.2 MHz
(d) Colpitts oscillator with foscillation = 159.2 MHz
[EC-2000 : 2 Marks]
0.01 µF 10 mH 1k
(a) R2 = 5R1 (b) R2 = 6R1 Q.8 The circuit shown in the figure has an ideal
R R op-amp. The oscillation frequency and the
(c) R2 = 1 (d) R2 = 1 condition to sustain the oscillations,
6 5
respectively are
[EC-2002 : 2 Marks]
R1
Q.6 The oscillator circuit shown in the figure has
an ideal inverting amplifier. Its frequency of R2
oscillation (in Hz) is –
Vo
+
C 2R
2C R
C C C
R R R 1
(a) and R1 = R2
CR
1
1 1 (b) and R1 = 4R2
(a) (b) CR
(2 6 RC ) (2 RC )
1
(c) and R1 = R2
1 1 2CR
(c) (d)
( 6 RC ) ( 6 (2 RC )
1
[EC-2003 : 2 Marks] (d) and R1 = 4R2
2CR
Q.7 The value of C required for sinusoidal [EC-2015 : 2 Marks]
oscillations of frequency 1 kHz in the circuit of
Q.9 Consider the oscillator circuit shown in the
the figure is
figure. The function of the network (shown in
1k 2.1 k dotted lines) consisting of the 100 k resistor in
series with the two diodes connected back-to-
back is to
–
Vout 1 nF 158 k
+
C
1k 1 nF 158 k
+VCC
–
1k C +
–VCC
22.1 k
1 100 k
(a) µF (b) 2 µF D1
2
1 10 k D2
(c) µF (d) 2 6 µF
2 6
[EC-2004 : 2 Marks]
GATE Previous Years Solved Paper 153
SECTIO N -B
[EC-2005 : 2 Marks]
154 Electronics Engineering Analog Electronics
Q.4 Consider the Schmidt trigger circuit shown Q.6 In the following astable multivibrating circuit,
below: which properties of vo(t) depend on R2?
+15 V R1
10 k
– –
Vi vo(t)
Vo +
+ R3
C
10 k R2 R4
10 k
–15 V
A triangular wave which goes from –12 V to (a) Only the frequency
12 V is applied to the inverting input of the
(b) Only the amplitude
op-amp. Assume that the output of the op-amp
(c) Both the amplitude and the frequency
swings from +15 V to –15 V. The voltage at the
(d) Neither the amplitude nor the frequency
non-inverting input switches between
[EC-2009 : 2 Marks]
(a) –12 V and +12 V (b) –7.5 and +7.5 V
(c) –5 V and +5 V (d) 0 and 5 V Q.7 In the astable multivibrator circuit shown in the
[EC-2008 : 2 Marks] figure, the frequency of oscillation (in kHz) at
the output pin 3 is _______ .
Q.5 An stable multivibrator circuit using IC 555
timer is shown below. Assume that the circuit
is oscillating steadily. VCC
9k 8 4
RA = 2.2 k VCC Res
3k 7
4 8 Disch
(Reset) (Supply)
6 (Threshold) RB = 4.7 k 555 Timer
6 3
10 k (Output) 3 Thresh Out
2 (Trigger) (Gnd)
(Discharge) 1 2
7 Trig
12 k C = 0.022 µF Gnd
1
VC 0.01 µF
[EC-2016 : 1 Mark]
The voltage VC across the capacitor varies
between
(a) 3 V to 5 V (b) 3 V to 6 V
(c) 3.6 V to 6 V (d) 3.6 V to 5 V
[EC-2008 : 2 Marks]
GATE Previous Years Solved Paper 155
Vs R2 R2 R
Re1 Re2 C3 C4
RF
156 Electronics Engineering Analog Electronics
C C
+ +
Vf = kVout k
RL
– –
RS RB
RE C
(a) the input impedance increases and output
impedance decreases.
(b) the input impedance increases and output
impedance also decreases.
(a) shunt-series feedback
(c) the input impedance decreases and output
(b) shunt-shunt feedback
impedance decreases.
(c) series-shunt feedback
(d) the input impedance decreases and output
(d) series-series feedback
impedance increases.
[EE-2004 : 1 Mark]
[EE-2013 : 1 Mark]
GATE Previous Years Solved Paper 157
Q.11 In the Wein bridge oscillator circuit shown in Q.13 A hysteresis type TTL inverter is used to realize
figure, the bridge is balanced when an oscillator in the circuit shown in the figure.
10 k
C1
+5 V
R1
+VCC vo
+
0.1 µF
–
–VCC R3
Q.12 An oscillator circuit using ideal op-amp and Q.1 The circuit of figure shows a 555 Timer IC
diodes is shown in the figure. connected as an astable multivibrator. The
value of the capacitor C is 10 nF. The values of
R
the resistors RA and RB for a frequency of 10 kHz
and a duty cycle of 0.75 for the output voltage
+5 V waveform are
–
Vo VCC
C +
–5 V RA
Th
3k
RB 555
Tr
R1 Timer
1k Vout
C IC
1k
Q.2 In the Schmitt trigger circuit shown in figure, if Q.4 IC 555 in the figure is configured as an astable
VCE(sat) = 0.1 V, the output logic low level (VOL), multivibrator. It is enabled to oscillate at t = 0 by
is applying a high input to pin 4. The pin
description is 1 and 8-supply, 2-trigger, 4-resel,
+5 V
6-threshold, 7-discharge. The waveform
appearing across the capacitor starting from
t = 0, as observed on a storage CRO is
200
+
Vo
Vi = 0 10 K
8
7
10 K IC 555 3
2, 6
1k I = 1.25 mA
4 1
+
Vs R 10 k
Vin –
RL = 10 15
10
5
V s (volts)
–10 V 0
–5
(a) 46% (b) 55%
–10
(c) 63% (d) 92% –15
[EE-2007 : 2 Marks] 0 100 200 300 400
Time (ms)
GATE Previous Years Solved Paper 159
15 vo
1
Current (mA)
T1 T1 T1 T1
0.5 (b)
0 t
–0.5
–1 vo
–1.5
0 100 200 300 400
Time (ms) T2 T1 T2 T1 T2
(c)
t
The element connected between a and b could be
(a) a b
vo
(b)
(c) a T2 T1 T2 T1 T2 T2
b (d)
t
[EE-2014 : 2 Marks]
(d)
Q.7 The cross-section of a metal-oxide
[EE-2009 : 1 Mark] semiconductor structure is shown
schematically. Starting from an uncharged
Q.6 Two monoshot multivibrators, one positive edge condition, a bias of +3 V is applied to the gate
triggered (M 1) and another negative edge contact with respect to the body contact. The
triggered (M2), are connected as shown in figure. charge inside the silicon dioxide layer is then
measured to be +Q. The total charge contained
+5 V
within the dashed box shown, upon application
M1 M2 of bias, expressed as multiple of Q (absolute
10 k
Q1 Q2 vo value in Coulombs, rounded off to the nearest
integer), is ______ .
10 µF Q1 Q2
GATE
Silicon Dioxide
vo [EE-2020 : 1 Mark]
T1 T2 T1 T2 T1
(a)
t
160 Electronics Engineering Analog Electronics
Answers
EC Oscillator Circuits (Section-A)
Solutions
EC Oscillator Circuits (Section-A)
2. (a) 1 1 1/ R 1/ R
= = = =
1 A 21 1 1 R +1k
+
= R k R×1 k
LC
1 R+1k = 21 × 1 k
= R = 20 k
10 × 10 3 × 0.01 × 10 6
= 2 × 104
= 105 rad/sec
R Vf 4. (b)
+ Figure shown is Colpitts oscillator,
Vo 1k 10 mH 0.01 µF
1
Vf f=
2 LC eq
–
C1C 2 2×2
Ceq = = = 1 pF
Apply nodal analysis, C1 + C 2 4
Vf Vo Vf Vf
+ + + V f Cs = 0 1
R 1k Ls =
2 10 × 10 6 × 10 12
1 1 1 Vo 1 × 10 9
Vf + + Vf j C = = 50.3 MHz
R 1k L R =
2 10
1
For oscillation C =0 5. (a)
L
R2
1 1 Vo
Vf + =
R 1k R R1
–
Vf 1/R 1 Vo
= = +
Vo 1 1 Vo
+
R 1k
Rf 100 k
A = 1+ = 1+ = 21
R1 5k
GATE Previous Years Solved Paper 161
KCL at node-1, V0 j C 1 2 jR
= + + R2 +1
Vo 0 V Vo V1 R 2 2
C C
+ o =0
R1 R2 For oscillation imaginary part is zero.
1 1 1 C 1 C
+ = i.e., j × 2 2+ × R2 = 0
R1 R2 R2 R C R
R1 + R2 1
=1 + CR = 0
R1 CR
2C2R2 – 1 = 0
R2
R1 1 +
R1 1 2 1
= =6 = 2 2
R1 R C
R2 1 1
C= =
=5 R 2 × 10 3 × 10 3
R1
R 2 = 5R 1 1
= µF
2
6. (a)
Frequency of oscillation for RC phase shift 8. (d)
Frequency of Wein bridge oscillation is
1
oscillator is .
2 6RC 1
o = , but in the question time constant is
RC
7. (a) doubled so, frequency becomes half,
2.1 k 1
o =
2RC
1k 1
– Z1 = 2 R + = 2 (R jR )
+
Vout j C
C
1
1k R×
2j C R2 / j
Z2 = =
V1 1 R jR
R+
2j C
1k C
Z2 1
= =
Z1 + Z2 5
R = 1k
R1
V0 V1 V V 1+ =5 R1 = 4R2
= 1 + 1 R2
XC + R XC R
V0 V1 9. (a)
XC + R
= V1 The given circuit is Wein-bridge oscillator
XC + R XC R
which produced sinusoidal oscillations and the
V0 ( XC + R)2 XC =
j
amplitude of output wave is decided by
= +1
V1 XC R C
feedback through inverting input terminal of
1 2 jR op-amp.
+ R2
V0 2 2
C C
= +1
V1 R
j C
162 Electronics Engineering Analog Electronics
Answers
EC Oscillator Circuits (Section-B)
Solutions
EC Oscillator Circuits (Section-B)
2. (d) Vo
1 1 10 V
T= = = 2 ms
f 500 Hz
CdV 6 3
I= = 2 × 10 × 3
Vi
dt 2 × 10 –5 V
= 3 × 10–3
I = 3 mA –10 V
3. (b)
4. (c)
The given circuit is of a Schmitt trigger. The
upper and lower transition voltages can be Let the voltage at the non-inverting input be V1.
obtained as, Applying KCL at non-inverting input end,
Vut = uVsat 15 V1 V0 V1 V1 ( 15)
+ =
When lower diode is ON, 10 10 10
15 – V1 + V0 – V1 = V1 + 15
2k
u = Vo
2.5 k V1 =
3
2 Since, Vo swings from –15 V to +15 V.
Vut = × 10 = 8 V
2.5 Therefore, V1 switches between –5 V and +5 V.
Vlt = – lVsat
5. (a)
when upper diode is ON,
VC varies between 3 V to 5 V.
2k 1
l = = 7. Sol.
4k 2
1
1 f =
= × 10 = 5 V 0.69( RA + 2 RB ) C
2
1
Vut and Vlt are upper and lower transition =
0.69 (2.2 × 10 3 + 2 × 4.7 × 10 3 ) × 0.022 × 10 6
voltage. The transfer characteristics of the circuit
= 5.6818 kHz
is given as below.
GATE Previous Years Solved Paper 163
Answers
EE Oscillator Circuits (Section-A)
10. (a) 11. (c) 12. (0.8) 13. (0.63) 14. (c)
Solutions
EE Oscillator Circuits (Section-A)
AOL = 10 5 Ro
Rof =
f = 10 Hz 1 + Ao k
AOL
ACL = 11. (c)
1 + AOL
R3 R C
10 5 = 1+ 2
(1 + AOL) = = 10 3 R4 R2 C1
10 2
1
f 2 = f2(1 + AOL) =
R1 R2C1C 2
= 10 × 103 Hz
= 10 kHz 12. Sol.
6. (b) R
T = 2RC ln 3 = 2 ln 3
–
8. (b) Vo
C +
Equivalent circuit can be drawn with input
voltage comparison and current feedback. It is 3k D1
shunt-shunt feedback.
9. (b)
1k D2
1k
|Gain|
Vsat ×
1k Vsat e t1 / RC
VLTP =
1k +1k
= = e( t1 t2 )/ RC
2 e t2 / RC
Vc = Vfinal + (Vinitial – Vfinal) e–t/RC 2 4
= = = 0.8
+V sat 5 /2 5
Charging
VUTP 13. Sol.
Discharging
V0
+5
1.7
VLTP
t1 t2 –V sat
–0.9 V
In time t = t1,
t
Vc = VUTP, Vinitial = VLTP, Vfinal = +Vsat 0V Vc(t)
Answers
EE Oscillator Circuits (Section-B)
Solutions
EE Oscillator Circuits (Section-B)
2. (b)
Vi = 0, then first transistor will be cut-off and GATE + q
current through left resistor will drive the second
SiO2 + q
transistor into saturation. 3V
Then, Vo = VCE,sat + 1.25 + 10–3 × 103 Si – q
= 1.35 V Body – q
3. (d)
It is class-D amplifier, so should be high of
Overall charge in side the box q + q – q – q = 0
class-D amplifier is 90% to 100%.
charge.
4. (a)
An astable multi-vibrator is providing pulses
as given below.
GATE-2023
Electronics Engineering
Electromagnetic Theory
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
(a) a monopole
C. J= 3. Ampere’s law
t (b) a dipole
4. Gauss’s law (c) both a monopole and a dipole
5. Biot-Savart law (d) a quadru pole
Codes: [EC-1999 : 1 Mark]
A B C
Q.13 The electric field on the surface of a perfect
(a) 3 2 1 conductor is 2 V/m. The conductor is immersed
(b) 2 1 3 in water with = 80 0. The surface charge
(c) 4 3 1 density on the conductor is
(d) 1 2 3 (a) 0 C/m2
[EC-1994 : 2 Marks] (b) 2 C/m2
Q.9 The electric field strength at distance point P (c) 1.8 × 10–11 C/m2
due to a point charge, +q, located at the origin, (d) 1.41 × 10–9 C/m2
is 100 µV/m. If the point charge is now enclosed [EC-2002 : 2 Marks]
by a perfectly conducting metal sheet sphere
whose center is at the origin, then the electric Q.14 The unit of × H is
field strength at the point P, outside the sphere, (a) Ampere (b) Ampere/meter
becomes
(c) Ampere/meter2 (d) Ampere-meter
(a) zero (b) 100 µV/m
[EC-2003 : 1 Mark]
(c) –100 µV/m (d) 50 µV/m
[EC-1995 : 1 Mark] Q.15 If the electric field intensity is given by
Q.17 A medium is divided into regions I and II about (a) E=0 (b) E=0
x = 0 plane, as shown in the figure below. An
×B = 0 B=0
electromagnetic wave with electric field
(c) ×E = 0 (d) ×E = 0
E1 = 4 aˆ x + 3aˆ y + 5aˆ z is incident normally on the
×B = 0 B=0
interface from region-I. The electric field E2 in [EC-2008 : 1 Mark]
region-II at the interface is Q.20 Two infinitely long wires carrying current are
Region-I Region-II as shown in the figure below. One wire is in the
= 0, µ1 = µ0, = 0, µ2 = µ0, y-z plane and parallel to the y-axis. The other
1 2
r1 = 3 r2 = 4
wire is in the x-y plane and parallel to the x-axis.
Which components of the resulting magnetic
field are non-zero at the origin?
E1 E2
z
1A
x<0 x=0 x>0
(a) E2 = E1
D (b) A dl = V ds
(d) H dl = J+ ds c
SC
t
c s
[EC-2007 : 1 Mark] (c) × V dl = × A ds
C
SC
Q.19 For static electric and magnetic fields in an
(d) × A dl = V ds
inhomogeneous source free medium, which of C
SC
the following represents the correct from of two
of Maxwell’s equations? [EC-2009 : 2 Marks]
4 Electronics Engineering Electromagnetic Theory
Q.22 A magnetic field in air is measured to be Statement for Linked Answer Questions (24 and 25):
An infinitely long uniform solid wire of radius a carries
x y
B = B0 yˆ xˆ
x2 + y2 x2 + y2 a uniform dc current of density j .
What current distribution leads to this field? Q.24 The magnetic field at a distance ‘r’ from the
[Hint: the algebra is trivial in cylindrical center of the wire is proportional to
coordinates]. (a) r for r < a and 1/r2 for r > a
B0 zˆ 1 (b) 0 for r < a and 1/r for r > a
(a) J = , r 0
µ0 x 2 + y 2 (c) r for r < a and 1/r for r > a
(d) 0 for r < a and 1/r2 for r > a
B0 zˆ 2 [EC-2012 : 2 Marks]
(b) J = , r 0
µ0 x 2 + y 2
Q.25 A hole of radius b(b < a) is now drilled along the
(c) J = 0, r 0 length of the wire at a distance ‘d’ from the center
of the wire as shown below.
B zˆ 1
(d) J = 0 , r 0
µ0 x 2 + y 2
b
d
[EC-2009 : 2 Marks]
Q.27 A region shown below contains a perfect Q.30 Consider a straight, infinitely long, current
conducting half-space and air. The surface carrying conductor lying on the z-axis. Which
one of the following plots (in linear scale)
current K s on the surface of the perfect
qualitatively represents the dependence of H
conductor is Ks = xˆ 2 amperes per meter. The on r, where H is the magnitude of the azimuthal
component of magnetic field outside the
tangential H field in the air just above the conductor and r is the radial distance from the
perfect conductor is conductor?
y H
Ks Air (a)
Perfect conductor
r
H
(b)
(a) ( xˆ + zˆ) amperes per meter
(b) xˆ 2 amperes per meter
r
(c) zˆ 2 amperes per meter
H
(d) zˆ 2 amperes per meter
[EC-2014 : 2 Marks] (c)
Q.28 The electric field (assumed to be one-
dimensional) between two points A and B is
r
shown. Let A and B be the electrostatic
potential at A and B, respectively. The value of H
r
40 kV/cm
[EC-2015 : 1 Mark]
at x = +d
+q
at x = –d
the electric flux density D = 0 at radius 10 m is x=0
________ .
[EC-2016 : 1 Mark]
Q.38 Consider the charge profile shown in the figure. Q.39 Two conducting spheres S1 and S2 of radii a
The resultant potential distribution is best and b (b > a) respectively, are placed far apart
described by and connected by a long, thin conducting wire,
(x ) as shown in the figure.
S2
1
S1
b 0 Wire
a x
Radius a
2 Radius b
1. D P. 0
b 0 2. ×E Q.
(d) x
a
B
3. B R.
t
D
4. ×H S. J +
[EC-2016 : 2 Marks] t
8 Electronics Engineering Electromagnetic Theory
Codes:
Q.44 The vector function, F(r ) = xiˆ + yjˆ is defined
(a) 1 - R, 2 - Q, 3 - S, 4 - P
over a circular arc C shown in the figure.
(b) 1 - Q, 2 - S, 3 - P, 4 - R
(c) 1 - P, 2 - R, 3 - Q, 4 - S
j
(d) 1 - Q, 2 - R, 3 - P, 4 - S
C
[EC-2019 : 1 Mark]
45°
Q.42 What is the electric flux ( E d aˆ ) through a i 1
y ELECTRICAL EN GINEERIN G
(GATE Previous Years Solved Papers)
(0, 2)
1 r=
r= 1
SECTIO N - A
c
Q.1 Given a vector field F , the divergence theorem
x states that,
(0, 0) (4, 0)
(a) F ds = F dV
(a) 0 (b) 1 s v
(c) 8 + 2 (d) –1
(b) F ds = × F dV
[EC-2022] s v
(a) E (b) E
[EC-2022] + (sin z2 + x 2 + y 2 ) kˆ , is
Q.49 In an electrostatic field, the electric displacement (a) 2z cos z2 (b) sin xy + 2z cos z2
(c) x sinxy – cos z (d) none of these
density vector, D, is given by
[EE-2007 : 1 Mark]
3 3 2 2
D( x , y , z) = ( x i + y j + xy k ) C/m Q.4 The direction of vector A is radially outward
where, i , j , k are the unit vectors along x-axis, from the origin, with A = kr n where
y-axis and z-axis respectively. Consider a r2 = x2 + y2 + z2 and ‘k’ is a constant. The value
cubical region R centered at the origin with each of ‘n’ for which . A = 0 is,
side of length 1 m, and vertices at (± 0.5 m, (a) –2 (b) 2
± 0.5 m, ± 0.5 m). The electric charge enclosed
(c) 1 (d) 0
within R is _____ C (Rounded off to two
[EE-2012 : 2 Marks]
decimal places).
[EC-2022]
10 Electronics Engineering Electromagnetic Theory
List-I X Y Z
A. Stoke’s theorem
B. Gauss’s theorem
C. Divergence theorem
D. Cauchy’s integral theorem
List-II
(a) X = 0, ×Y 0, ×Z = 0
1. D ds = Q
(b) X 0, × Y = 0, ×Z 0
2. f ( z ) dz = 0
(c) X 0, ×Y 0, ×Z 0
3. ( A) dV = A ds (d) X = 0, × Y = 0, ×Z = 0
[EE-2017 : 1 Mark]
4. ( × A ) ds = A dl
Q.10 Let ar, a and az be unit vectors along r, and z
Codes:
directions, respectively in the cylindrical
A B C D
coordinate system. For the electric flux density
(a) 2 1 4 3 given by
(b) 4 1 3 2 D = (ar 15 + a 2r – az 3rz) Coulomb/m2
(c) 4 3 1 2 The total electric flux (in Coulomb), emanating
(d) 3 4 2 1 from the volume enclosed by a solid cylinder of
[EE-2015 : 1 Mark] radius 3 m and height 5 m oriented along the
z-axis with its base at the origin is
Q.7 In cylindrical coordinate system, the potential
(a) 108 (b) 54
produced by a uniform ring charge is given by
(c) 90 (d) 180
f = f(r, z), where ‘f ’ is a continuous function of
[EE-2020 : 2 Marks]
r and z. Let E be the resulting electric field. Then
SECTIO N -B
the magnitude of ×E
Q.1 An electrostatic potential is given by
(a) increases with r (b) is 0
(c) is 3 (d) decreases with z = 2 x y V in the rectangular co-ordinate
[EE-2016 : 1 Mark] system. The magnitude of the electric field at
x = 1 m, y = 1 m is _______ V/m.
[EE-1992 : 1 Mark]
GATE Previous Years Solved Paper 11
Q.2 Which of the following equations represents the Q.7 The capacitance of an isolated sphere of radius
Gauss’ law in a homogenous isotropic medium? 10 cm in air is equal to ______ pF.
[EE-1997 : 2 Marks]
(a) D ds = dV
Q.8 Given the potential function in free space to be
(b) ×H = D V(x) = (50x2 + 50y2 + 50z2) Volts, the magnitude
(c) J+ =0 (in Volts/meter) and the direction of the electric
field at a point (1, –1, 1), where the dimensions
(d) E= are in meters, are
Q
10 cm r1 =1
m
m
20
20 cm
r3 =4 1 nC
=2 + P
10 cm r2 40 mm
(a) 8.85 × 10–11 (b) 8.85 × 10–5 Q.22 A perfectly conducting metal plate is placed in
(c) 88.5 (d) 885 x-y plane in right handed coordinate system. A
[EE-2013 : 2 Marks] charge of +32 2 Coulomb is placed at
0
Q.19 C0 is capacitance of a parallel plate capacitor coordinate (0, 0, 2). 0 is the permittivity of free
with air as dielectric [as in Fig. (a)]. If, half of the
space. Assume iˆ , ˆj , kˆ to be unit vectors along x,
entire gap as shown in Fig. (b) is filled with a
dielectric of permittivity r, the expression for y and z axes respectively. At the coordinate
the modified capacitance is ( 2 , 2 , 0), the electric field vector E
(Newtons/Coulomb) will be
z
(a) (b) 32 0 2 Columbs
y Perfectly conducting
C0
(a) (1 + r ) (b) (C0 + r)
(0, 0, 2) metal place
2
C0 ( 2 , 2 , 0)
(c) r (d) C0(1 + r)
2
(0, 0, 0)
[EE-2014 : 1 Mark] x
(c) 2 kˆ (d) 2 2 kˆ
1 1
[EE-2014 : 2 Marks]
Y
Statements for Linked Answer Questions (10 and 11):
An inductor designed with 400 turns coil wound on
The magnetic field intensity H at point P is an iron core 16 cm2 cross-sectional are and with a cut
I I of an air gap length of 1 mm. The coil is connected to a
(a) y (b) x
d d 230 V, 50 Hz ac supply. Neglect coil resistance, core
I I loss, iron reluctance and leakage inductance,
(c) y (d) x
2 d 2 d (µ0 = 4 × 10–7 H/m).
Q.7 Two infinite strips of width w m in X-direction (a) 18.08 A (b) 9.04 A
as shown in figure, are carrying forward and (c) 4.56 A (d) 2.28 A
return currents of +I and –I in the Z-direction. [EE-2007 : 2 Marks]
The strips are separated by a direction of x m. Q.11 The average force on the core to reduce the air
The inductance per unit length of the gap will be
configuration is measured to be L H/m. If the
(a) 832.29 N (b) 1666.22 N
distance of separation between the strips is now
(c) 3332.47 N (d) 6664.84 N
reduced to x/2 m, the inductance per unit length
of the configuration is [EE-2007 : 2 Marks]
GATE Previous Years Solved Paper 17
y
y = –L/2 y = L/2
y
2A (2, 1, 0) 0
1 Current = I Current = I
Iamps
µ0 I
B= x
2 d
d 4A 4 µ0 I 4 µ0 I
x (a) zˆ (b) + zˆ
1 2 3 L 3 L
z
3 µ0 I
(c) 0 (d) zˆ
4 L
Assuming right handed coordinate system, [EE-2015 : 1 Mark]
magnetic field intensity, H at coordinate
Q.17 A soft-iron toroid is concentric with a long
(2, 1, 0) will be straight conductor carrying a direct current I. If
the relative permeability µr of soft-iron is 100,
18 Electronics Engineering Electromagnetic Theory
i Vturn
X
[EE-2017 : 2 Marks]
[EE-2020 : 2 Marks]
GATE Previous Years Solved Paper 19
10 cm Z
B
5 cm
1m
[EE-2015 : 1 Mark]
Answers
EC Basics of Electromagnetics
9. (b) 10. (b) 11. (a) 12. (c) 13. (d) 14. (c) 15. (c) 16. (c)
17. (c) 18. (d) 19. (d) 20. (d) 21. (b) 22. (c) 23. (a) 24. (c)
25. (a) 26. (c) 27. (d) 28. (15) 29. (d) 30. (c) 31. (–3) 32. (78.54)
33. (–0.25) 34. (*) 35. (a) 36. (c) 37. (a) 38. (d) 39. (c) 40. (5.06)
41. (d) 42. (d) 43. (d) 44. (a) 45. (56.54) 46. (0) 47. (a) 48. (512)
49. (0.5)
20 Electronics Engineering Electromagnetic Theory
Solutions
EC Basics of Electromagnetics
1. (b) 5. (c)
An electrostatic field is said to be conservative Magnetic field lines are closed around the
when the closed line integral of the field is zero, current and have no sources or sink points,
E dl = 0 B ds = Bdv
B =0
3. (a)
µH = 0
Vector potential magnetic fields is the measure
µ H =0
of work done to move a current element I dl ,
H =0
W
A =
I dl 6. Sol.
× A = B = µH ( V ) dV = 1
4. (a) 7. Sol.
The radially outward field is normal to vr
D= ; r<R
conductor and no induction effects E is same, 3
3
vR
D= ; r>R
2
+ +
+
3r
– – – Applying Gauss law with spherical Gaussian
+
+q vR
–
–
+
E (at r = R/2) =
6
–
–
–
+
vR
–
–
+ + E(2R) =
+ 12
E(at r = R /2)
So, =2
E(at r = 2 R )
GATE Previous Years Solved Paper 21
8. (a) V
(A) – 3, (B) – (2), (C) – 1
×H = J Ampere’s law
B
E dl = ds Faraday’s law
c
t
s
+Q –Q
J = Continuity equation d
dt
14. (c)
+
–
+q
–
–
+
D
×H = +J
–
–
–
+
t
+
–
–
+ +
+
1 Amere A
× =
m m m2
10. (b)
15. (c)
s
E = aˆn
2 V= E dl
where, aˆn = aˆ y 2 0 0
1 = x dx + y dy + z dz
= × 10 6 C/m 2 1 2 3
s 6000
2 0 0
10 6 × x2 y2 z2
E = aˆ y = + +
2 × 8.854 × 10 12 × 6000 2
1
2
2
2
3
E = 3 aˆ y = 3 j V/m 1 2
= [2 12 + 02 2 2 + 02 32 ]
11. (a)
2
1
Net flux leaving = Charged enclosed = × 10 = 5 V
2
Cube encloses the sphere completely,
16. (c)
D ds = Qenclosed
E1 = 2ux – 3uy + 1uz
Qenclosed = s A = s (4 r2)
= 10 (4 × 12) = 40 E1t = –3uy + uz = E2t (x = 0 plane)
3 × 4 aˆx
En2 = = 3 aˆ x aˆ x aˆ y aˆ z
4
E2 = Et2 + En2 ×B = =0
x y z
= 3 aˆ y + 5 aˆ z + 3 aˆx y x
2 2
0
x +y x + y2
2
19. (d)
Intensity – Curl – Line integral J=0
Density – Divergence – Surface integral
23. (a)
This is order of understanding Maxwell’s
For magnetic field boundary relations are,
equations.
For any material, Bn1 = Bn2
×E = 0; B=0
and Ht Ht2 = J s × an
×H = J; D= v
1
For source free like charge or current free Bx1 = Bx2 (x is normal component)
conditions,
×E = 0; B=0 µ1 H x1 = µ2 H x2
×H = 0; D=0
1 × 3 = 2 × H x2
If D = E and B = µH and or µ are constant
with distance or direction then, H x2 = 1.5
B
( E) = 0 ; × =0 Ht1 Ht 2 = 10 uˆ y × uˆ x = +10 uˆ z
µ
E = 0; ×B=0
H t2 = 30 uˆ y 10 uˆ z
These are called as homogeneous/isotropic
medium.
H 2 = 1.5 uˆ x + 30 uˆ y 10 uˆ z A/m
For non-homogeneous material. However they
are not valid.
24. (c)
20. (d) We know that magnetic flux density at a
Hdirection due to any current wire = I flow distance ‘r’ from the wire is,
direction × Radial vector from current to point
of consideration.
GATE Previous Years Solved Paper 23
µ0 I 28. Sol.
B =
2 r y
For r < a, I=J r2
µ0 Jr
So, B =
40 kV/cm
2
B r for r < a
For r > a, I = J × a2 20 kV/cm
2
µ0 J a
So, B =
2 r 0 kV/cm x
A 5 µm B
1
B for r > a
r E is linear from A to B and E = mx + c.
We can simply find area of E – x plot to find
25. (a)
answer = 15 V.
+J
29. (d)
–J
r1 V V V
E= aˆ x aˆ y aˆ z
a r2 x y z
b
V
Hole = 2y3 – 3yz2
x
Cylindrical
V = 2xy3 – 3xyz2 + K1
The H field due to entire cylinder without hole, V
= 6xy2 – 3xz2
Jr1 y
H(r1) =
2 V = 2xy3 – 3xyz2 + K2
The H field due to hole only, V
= –6xyz
Jr z
H(r2) = 2
2 V = –3xyz2 + K3
Current inside the hole is zero means, Comparing all three for uniqueness solution of
Jr1 Jr2 Jd potential,
H(r) =
2 2 2 K 1 = K2 = 0, K3 = 2xy3
27. (d) 3 2 2 2
E = (2 y 3 yz ) xˆ (6 xy 3xz ) yˆ + (6 xyz) zˆ
Since, we know from the property of magnetic As we know that,
boundary conditions, E=– V
Ht2 Ht1 = Kˆ s × aN
E= xˆ + yˆ + zˆ V ...(i)
x y z
In the given question the tangential field H in
Clearly option (d) satisfies the given relation.
the air just above the perfect conductor is asked
with H = 0 inside the conductor, 30. (c)
Ht1 = 0 I
H = aˆ
Ht2 = xˆ 2 × yˆ 2 r
1
Ht2 = zˆ 2 A/m H
r
Option (c) is satisfied.
24 Electronics Engineering Electromagnetic Theory
31. Sol. /4
400 r 2 1 cos 2
= 2x2 + y2 + cz2 = 2
d
(r + 4) /12 2
In source free region,
D =0
/4
400 r 2 4 12 sin 2
( E) = 0 =
(r 2 + 4) 2 4 /12
E =0
where, E = V= 400 r 2 1 1/2
= 2
aˆ x + aˆ y + aˆ z (r + 4) 12 4 r = 0.8
Now, V=
x y z
400 × 0.8 × 0.8
E = 4x aˆ x + 2 y aˆ y + 2cz aˆ z = × 0.13 = 7.17 A
4.64
Again, E =0 Total area
Ex Ey E = ds = r 2 sin d d
+ + t = 4 + 2 + 2c = 0
x y z /4
2
c = –3 = r sin d 2
= /12
32. Sol.
2
= r 2 0.259
2ˆ r = 0.8
D = 2 a + zaˆ z
1
Surface, = 1, z = 0 and z = 5 = 0.82 × 0.5 × 2 × = 1.041 m 2
4
D ds = D ds + D ds + D ds 7.17
Top Bottom Curved Average current = = 6.88 A/m 2
s surface surface surface 1.041
= 5 + 0 + 20 = 25 = 78.54 Note : GATE key mentioned (MTA-marks to all)
37. (a) • Va = Vb
Let, E = E1 Q Q
So, =
Q12 4 0 a 4 0b
Energy, E1 =
2C1 Qb b
=
Electrically isolated Q2 = Q1 Qa a
d 2 = 2d 1 • Now, surface electric fields,
C1
C2 = Ea Qa /4 0 a2
2 =
Eb Qb /4 0 b2
Q22 Q12 Q12
E2 = = 2
2C 2 2C 1 2C 1 Qa × b 2 b
= = >1
2 Qb × a 2 a
= 2E1 = 2E
So, Ea > Eb
38. (d)
40. Sol.
Applying Poisson’s equations,
q1 5
v = 10 m/s q2
2
V v
2V = = =K moving r stationary
x2
Constant charge density, ‘r’ is the distance at which kinetic energy of q1
V becomes zero [(because kinetic energy (KE) is
= –Kx + K converted into potential energy (PE)].
x
When, q1 reaches ‘r’, it starts diverting.
Kx 2
V= +K x+K 1
2 Kinetic energy, KE = mv 2 and work done in
Towards positive x or negative side. 2
It is a second order parabolic increase. moving q1 charge to distance ‘r’ is
Due to symmetry of + and – charges K = 0 is q2
expected with V = 0 at center and graph passing q 1v 2 = q1
4 0r
through origin.
(q1 = q2 = –1.6 × 10–19 C)
Beyond x > a or x < b, E = 0 due to capacitive
1 q q
nature of + and – charges, Now, mv 2 = 1 2
2 4 0r
V= 0 dl = constant 19 19
(2 × 1.6 × 10 ) × ( 1.6 × 10 )
r= 9
This constant is same at x = a or x = b. 10 31
4 × × 9.11 × 10 × (10 5 )2
36
39. (c)
5.06 × 10–8 m
S2
S1 41. (d)
Wire
D = v
Radius a B
Radius b ×E =
t
• When charge is placed on this structure,
equilibrium is established such that both B =0
spheres are at same potential i.e., D
×H = J +
Va = Vb t
26 Electronics Engineering Electromagnetic Theory
42. (d)
Then, I = C ( x dx + y dy )
Electric field intensity (E) at ‘ ’ distance due to
infinite long line having line charge density Q
j
is
C
Q
E = aˆ
2 0
45°
Q
E da = aˆ d dz aˆ i 1
2 0
H But, x = r cos , Y = r sin
Q
= d dz dx = –r sin d , dy = r cos d
2 0 < /2 > z=0
Here, : 0 to
Q HQ 4
= H=
2 0 2 4 0 Now,
/4
So, B = B1 + B2
Z=0
µ0 I 2µ0 I 5µ0 I
B = + = bottom
2 r 6 r 6 r
The net flux leaving the closed surface of the
44. (a)
cylinder is,
Let, I = C f (r ) dr = C ( f 1 dx + f 2 dy ) net = bottom + top + side
GATE Previous Years Solved Paper 27
48. (512)
net = D dS + D dS + D dS
( z = 0) ( z = 2) ( = 3)
S 4 x
I= (3x 2 + 3y 2 ) dy dx
As dS = d d ( ± az ) for z = constant and hence 0 x
4 x
D dS = 0 for both z = 0 and z = 2 for =3: 3y 3
= 3x 2 y + dx
2 2
3
D dS = ( cos aˆ + z sin aˆ ) d dz aˆ 0 x
4
2 2 = (3x 2 (2 x ) + 2 x 3 ) dx
2
net = cos2 d dz 0
( = 3)
z=0 =0
4 4
2 1 = (6x 3 + 2 x 3 ) dx = 8x 3 dx
= (3) × (2) × (2 ) 0 0
2
= 18 (or) 56.54 8 4 4
net = ( x )0 = 2 × 4 4 = 512
4
46. (0)
Given that: 49. (0.5)
= (0 0) dx dy
R
=0
28 Electronics Engineering Electromagnetic Theory
Answers
EE Basics of Electromagnetics (Section-A)
Solutions
EE Basics of Electromagnetics (Section-A)
2. (d) 6. (b)
Divergence of a curl field is always zero. Stokes theorem,
i.e., ( × E) = 0 A dl = ( × A ) nˆ ds
Gauss theorem,
3. (a)
V(x, y, z) = –x(cos xy + y) i + (y cos xy) j D ds = Q
× [sin(z2) + (x2) + (y2)] k Divergence theorem,
Divergence = V
A nˆ ds = A dV
Vx Vy V
= + + z Cauchys integral theorem,
x y z
= –cos xy + x(sinxy)y + cos xy f ( z) dz = 0
–y sin(xy)x + 2z cosz2 c
= 2z cosz2
7. (b)
4. (a) V is given as static field in time invariant.
A = kr iˆr n Hence, ×E = 0
1
A = (r 2 kr n ) 8. Sol.
r2 r
1 E = 5x zi + (3x 2 + 2 y ) j + x 2 zk
= ( kr n + 2 )
r2 r = F dr
n+1 C
r
= ( n + 2) k 2
= ( n + 2) kr n 1
r 5x z dx + (3x 2 + 2 y ) dy + x 2 z dz
=
For A = 0 C
n+2 = 0 x = t, y = t2, z = t, t = 0 to 1
n = –2 dx = dt
dy = 2t dt, dz = dt
5. (c)
1
= 5t 2 dt + (3t 2 + 2t 2 ) 2t dt + t 3 dt
1 0
r̂ f =
r2 1
= (5t 2 + 11t 3 ) dt
From divergence theorem as we know, 0
1
( f ) dV = f dS 5t 3 11t 4 5 11 53
vol. s + = + = = 4.41
=
3 4 3 4 12
1 0
f dS = 2
rˆ × r 2 sin d d rˆ
s s r
= sin d d =4
s
GATE Previous Years Solved Paper 29
9. (c) ( D) dV
X is going away so X 0. 15
= 3 d d dz
Y is moving circulator direction so ×Y 0.
2
= 15 d d dz 3 d d dz
Z has circular rotation so ×Z 0.
3 2 5 3 2 5
2
10. Sol. = 15 d d 3 d d dz
=0 =0 z=0 =0 =0 z=0
/crossing closed surface
= D ds = ( D) dV ...(i) 33
= 15(3 0) (2 ) (5) 3 × (2 ) (5)
3
1 1 D Dz
D = ( D )+ + = 45(10 ) – 27(10 ) = 180 C
z
1 1
= ( 15) + (2 ) + ( 3 z)
z
1
= 15 3
Answers
EE Basics of Electromagnetics (Section-B)
9. (a) 10. (b) 11. (d) 12. (b) 13. (d) 14. (a) 15. (c) 16. (b)
17. (c) 18. (c) 19. (a) 20. (c) 21. (a) 22. (b) 23. (18.75) 24. (a)
25. (d) 26. (d) 27. (c) 28. (c) 29. (d) 30. (b) 31. (10.03) 32. (d)
Solutions
EE Basics of Electromagnetics (Section-B)
1. Sol. Magnitude of E ,
Electrostatic potential,
E = 2 2 + 12
= 2x y
= 5 = 2.24 V/m
Q E = –grad ( ) = –
E = aˆx (2 x y ) + aˆ y (2 x y ) 2. (a)
x y
Gauss Law: The electric flux passing through
x any closed surface is equal to the total charge in
E = aˆ x 2 y aˆ y
y the volume enclosed by the surface i.e.,
Now, at x = 1 m and y = 1 m
D ds = v dV
E = 2 aˆ x aˆ y
30 Electronics Engineering Electromagnetic Theory
10
Hence, × E = 0 i.e. electromagnetic fields are = 4 × 8.85 × 10 12 × (in air)
100
conservative in nature.
= 11.11 pF
4. (b)
8. (d)
By the fundamental definition of voltage,
V(x, y, z) = 50x2 + 50y2 + 50z2
dW
V= E =– V
dq
= [100x iˆ + 100 y ˆj + 100 z kˆ ] V/m
5. (d)
E (1, 1, 1) = [100 iˆ 100 ˆj + 100 kˆ ] V/m
Field liens are always from higher potential to
lower potential point, so at equipotential E = 100 2 + 100 2 + 100 2
surfaces field lines are always normal or
= 100 3
orthogonal.
E 1
6. Sol. aˆE = = (i j + k)
E 3
C1 9. (a)
C3
(1, 1, 0)
C C2
r
d = 20 cm
A = 20 × 20 = 400 cm2
(–1, 1, 1)
C1C2
C= + C3
C1 + C 2
r = [1 ( 1)] iˆ + (1 1) ˆj + (0 1) kˆ
A A
0 r1
2
0 r2
2 = 2iˆ kˆ
d d A
0 r3
Distance between (1, 1, 0) and (–1, 1, 1) = r
= 2 2 + 2
A A d = (1 ( 1)2 + (1 1)2 + (0 1)2 = 5
0 r1 0 r2
2 + 2
d d
Q 10 6
2 2 E = 3
(r ) = 3
(2 iˆ kˆ )
4 0r 4 0 ×( 5 )
A r1 r2 0 r3 A
= 0 +
d r1 + r2 2d 10 6
= (2 iˆ kˆ )
0 A r1 r2 r3
20 5 0
= +
d r1 + r2 2
GATE Previous Years Solved Paper 31
A 0 r2 A = 1475 pF
r1 0 ×
d1 d2 17. (c)
=
r1 0 A 0 r2 A
+ A
d1 d2 Q = CV = 0 r × V
d
12 3 2
(8.85 × 10 ) (400 × 10 ) × 4×2
= V
4 × 8 × 10 3
+ 6 × 2 × 10 3 = 0 r A× = 0 r A× E
d
= 257 pF
32 Electronics Engineering Electromagnetic Theory
18. (c)
1 2 Equivalent capacitance is,
Energy density =E
2 Ceq = C1 + C2
Energy = Energy density × Volume 0A 0 rA
= +
1
× 2
+ 82 ) × 1012 × 0.5 × 0.5 × 0.4
2d 2d
Energy = 0 × r (6
2
0A C0
1 Ceq = (1 + r)=
(1 + r )
12
= × 8.85 × 10 × 2 × 100 × 1012 × 0.1 2d 2
2 [Using equation (i)]
= 88.5 J
Therefore, modified capacitance,
19. (a) C0
Ceq = (1 + r )
Let A be the area of the parallel plate capacitor 2
and ‘d’ be the distance between the plates. 20. (c)
With air dielectric:
Let, A = Area of plates
Let, C1 = C3 be the capacitance formed with
=1
dielectric having dielectric constant 1.
r d
Ceq be the equivalent capacitance.
C2 be the capacitance formed with dielectric
having dielectric constant r2.
A
Capacitance, C0 = 0 ...(i) 4
d 0 1A
Then, C1 = C3 =
With the new arrangement: d
0 1A 2 0 2A
and C2 = =
d /2 d
0 r d Also, equivalent capacitance = Ceq
1 1 1 1 2 1
= + + = +
C eq C1 C 2 C 3 C1 C 2
Let C1 be the capacitance of half portion with (Q C1 = C3) (C1, C2, C3 all in series)
air as dielectric medium and C2 be capacitance 2d d
1
with a dielectric of permittivity, r. or, = +
C eq 4 0 1d 2 0 2 A
A
0 2 1 2 0A
2 or, Ceq =
Then, C1 = (As area becomes half) d( 1 + 2 )
d
Given, Veq = Total voltage = 10 Volt
A V1 = V3 = 2 Volt
0 r
2 1
and C2 = (As area becomes half)
d We know that, C
V
Now, these two capacitance will be in parallel
C eq V1 C eq 1
if a voltage is applied between the plates as same = or =
C1 Veq C1 5
potential difference will be there between both
the capacitances. 2 0 1 2A d 1
or, × =
d( 1 + 2 ) 4 0 1 A 5
GATE Previous Years Solved Paper 33
2 1 24. (a)
or, =
2( 1 + 2) 5 Given that:
or, 5 2 = 2 1+2 2
At the interface (y = 0) there is no surface charge.
or, 2 1 =3 2 Region 1 (y < 0) has r = 2
or, 1: 2 = 3:2 Region 2 (y > 0) has r = 5
Electric field in region 1 is 3ax + 4ay + 2az
22. (b) Normal component of electric field is 4a y
Due to charge at (0, 0, 2) and conductor plane tangential component of electric field is 3ax + 2ay
there is an image at (0, 0, –2). Now, E1 = E1t + E1n
Total field is E1 + E2 The tangential component of E1 = tangential
component of E2,
32 0 2 E1t = E2t = 3ax + 2az
E1 = 3 /2
( 2 aˆx + 2 aˆ y 2 aˆ z )
4 0 (2 + 2 + 4) and 1E1n = 2E2n
32 2
so, E2n =
0
E2 = ( 2 aˆx + 2 aˆ y + 2 aˆ z )
4 0 (2 + 2 + 4)
3 /2 1 × 4 ay 2 × 4 ay
= = 1.6 ay
2 5
E = 2 aˆ z = 2 kˆ
so, E2 = E2t + E2n
= 3ax + 1.6ay + 2az
23. Sol.
A capacitor is made as shown in figure. 25. (d)
A Due to image of the charge, three new charges
will be created as shown in figure.
5 mm C1 =1
r y
5 mm Air r=1
5 mm r =4
3 4
5 mm C2 =4
r –Q d d Q
d
B 2d
Breakdown of dielectric air is 30 kV/cm and x
breakdown of dielectric glass is 300 kV/cm. d
We need to find maximum value of VAB so that 2d
no C1 or C2 breaks down. +Q –Q
Since, area and width of C1 and C2 is same but 2 1
r1 = 1 and r2 = 4.
Total force (4) due to (1), (2), (3) will be
So, C 2 = 4C 1
Ftotal = F41 + F42 + F43
So, if VAB is applied,
F41 = Force as (4) due to (1)
4
VAB and VC 2 = 1 VAB
VC1 =
5 5 Q2 1 ˆ
= j
For C1 not breakdown, we need, 4 0 (4 d 2 )
4 VAB F42 = Force as (4) due to (2)
< 30 kV/cm
5 5 mm
Q2 1 ˆj iˆ
30 × 25 × 1000 = + +
VAB < V 4 0 8d 2 2 2
4
VA < 18.75 kV
34 Electronics Engineering Electromagnetic Theory
( )
V–2Q =
4 ( x 6)2 + y 2 30. (b)
Added charge (one million electrons) to be solid
Vtotal = 0
spherical conductor is uniformly distributed
Q 2Q
+
( ) ( )
= over the outer surface of the sphere.
4 x2 + y 2 4 ( x 6)2 + y 2
31. Sol.
2 2 = 2( x + y ) 2 2
( x 6) + y 4 3
After burst, 4 R2a = r
3
x2 + 36 – 12x + y2 = 4x2 + 4y2
Radius of soap drop
3x2 + 3y2 + 12x = 36
= (3R2a)1/3 = 0.099665 cm
x2 + y2 + 4x = 12
Initial voltage was 1 V and C = 4 0R and initial
(x + 2)2 + y2 = 16
charge,
27. (c) Q = (4 0R × 1)
As voltage is same across both the regions and since after bursting Q remain same and C = 4 0r
distance between two plates in also same, then New potential on soap drop,
electric field remains same throughout the both Q 4 0R 1
V= = = = 10.03 V
region. As we know, C 4 0 rR 0.099665
V
E= = constant for both regions 32. (d)
d
Z
28. (c)
(0, 0, 0.2) Q = 1 nC
P (0, 0, 0.1)
A C
Z=0
B
1 × 10 9 ( 0.1 aˆ z ) r
Total, E12 = 12
4 (8.854 × 10 ) (0.1)3
9
( 1 × 10 ) ((0.3) aˆ z ) =2
+ 12 3
r1
4 (8.854 × 10 ) (0.3)
2 h 2 (2) h
0
10 5 105 C1 = =
= aˆ z b R
4 (8.854) 4 (8.854)9 ln ln
a r
= ( 898.774 99.863) aˆ z 4 0h
C1 = R ...(i)
999.09 aˆ z V/m ln
r
33. Sol. Co-axial cylindrical capacitor-2,
0A
Given, C= = 60 pF
d
R
In second case:
C1 C2
3 /2 r /2
r2
r1 =2
3
0 (2) h 0 r2 h
2
C2 = +2
R R
ln ln
d/2 r r
Capacitance, h 0 r2
C2 = 3+ ...(ii)
0A 2 A R 2
C1 = = 0 ln
d /2 d r
= 2 × (60 pF) = 120 pF Given, C 2 = 2C 1
2 0 rA Put equation (i), (ii) in equation (iii),
and C2 = = (2 × 60) r pF
d
= 120 r pF h 4 h
0 r2 0
120 × 120 r 3+ = 2
C1C 2 R 2 R
Now, Ceq = = pF ln ln
C1 + C 2 (120 + 120 r ) r r
= 80 pF (Given)
120 × 120 r 3 + r2 = 8
or, 86 = 2
120(1 + r )
r2
86 r 86 =5 = 10
= or = 2.53 2 r2
120 r= 34
1+ r
36 Electronics Engineering Electromagnetic Theory
35. (d) 1 1D D
v = (rDr ) + + z
E= r r r z
D = 0 rE
1 1 6.75 0
3 = r r (r 4.5 0 r ) + r + (13.5 0)
0 2.25 2r aˆr + aˆ + 6 aˆ z r z
v
D = r
1 2
6.75 = (4.5 0r )+0 +0
0 r r
D = 4.5 0 r aˆr + aˆ + 13.5 0 aˆ z
r
1
Volume charge density, = (4.5 0 ) (2 r ) = 9 0
r
v = D
Answers
EE Basics of Electromagnetics (Section-C)
9. (d) 10. (d) 11. (a) 12. (b) 13. (a) 14. (c) 15. (c) 16. (a)
Solutions
EE Basics of Electromagnetics (Section-C)
1. (a) 3. (b)
Using Stoke’s theorem, µo N 2 A
L=
A dL = ( × A) d s l
s 2
7 3
4 × 10 × (1000)2 × × × 10 2
Q A is vector magnetic potential = 2
2
× A = curl ( A) 30 × 10
= 2.96 mH
= Magnetic flux density B
1 2 1
E= LI = × 2.96 × 10 3 × 10 2
( × A) d s = B ds 2 2
s s = 0.148 J 0.15 J
= flux through the surface S
4. (b)
2. Sol. Use right hand thumb rule.
(False)
5. (d)
According to Faraday’s law: induced voltage
F = Felect + Fmag = qE + qu + B
d
i.e. only time varying fields induce voltage
dt = q (E + u + B) ...(Lorentz force)
and hence responsible for production of For an electron q = –e
induced currents in closed loops. F= e ( E + u × B)
GATE Previous Years Solved Paper 37
6. (a) XL = 2 fL
H = H1 + H2 V V
I= =
XL 2 fL
I I I
= yˆ + yˆ = yˆ
2 d 2 d d 230
= = 2.28 A
2 × 50 × 0.3215
11. (a)
1
+I + P – –I Energy stored = ×L× I2
2
1
× 0.3215 × 2.282
=
2
= 0.8356 J
7. (c) Force to reduce 1 mm air gap = E/d
Inductance/m is proportional to separation 0.8356
= 3
= 835.6 N
between the strips so when separation is 1 × 10
reduced to x/2 then inductance will become
12. (b)
L/2 H/m.
n = 300
8. (c) (I) circumference = 2 r = 300 mm
Let, B = µ0 nI A = 30 mm2
then, = B.S = µ0 n SI = 300 × 10–6 m2
where ‘S’ is the cross-sectional area of solenoid. Inductance of coil,
Flux linkage,
µ0 N 2 A
a = n = µ0 n2 SI L=
I
Hence inductance/length = µ0 n2 S
For, l = 1000 mm = 1 m 4 × 10 7 × 300 × 300 × 300 × 10 6
=
L = 4 × 10–7 × 30002 × × (30 × 10–3)2 300 × 10 3
= 32 mH = 113.04 µH
µ0 I µ0 I µ0 I
( zˆ ) + ( zˆ ) B= (sin 1 + sin 2)
B = L 3L 4 d
2 2
2 2 We know for each segment of hexagon,
µ0 I ( zˆ ) 2 4 µ0 I P
= 2+ = zˆ
2 L 3 3 L
17. Sol. d
Toroid has field,
B µ 1 2
x
As, µ = 100 (inside field) I
Magnetic field density B at any point at a
Magnetic field intensity due to elemental length
distance at r is,
dx,
µI
B= I dx
2 r dH = i × ur
4 r2
µ 0 µr I
Now, B = (Just inside toroid) where,
at r 2 r
i × ur = (sin ) kˆ
µ0 I ...(Perpendicular to plane of paper
and B = (Just outside toroid)
at r + 2 r+
I sin
H= dH = ( dx ) kˆ
B 4 r2
at r
= µr = 100 and B = µ0 H
B
at r +
µ0 I ˆ
So, Bp = (cos 1 + cos 2) k
4 d
18. (a)
Iron being a ferromagnetic material, magnetic 3
d = l (where, l = 1 m)
lines of force bend closer to cylindrical axis. 2
and 1 = 2 = 60°
19. Sol.
i = 1A µ0 I
Bp = (cos 60° + cos 60°)
3
4
2
6
l For all six segments,
4 × 10 7 × 6 × 1
1 d 5 6 × Bp = (1)
3
4 ×
3 2
d=
2
12 7 1.20 6
= × 10 = × 10 T
2 4 3 3
3 B = 0.69 µT
i
GATE Previous Years Solved Paper 39
20. Sol. µ0 I
= (ln )2 = 1 ( z)1z = 0
I 2
= MI µ0 I
= (ln 2)
µ0 I 2
B = aˆ ( B due to infinite long line)
2
µ0 (ln 2) 4 × 10 7 (ln 2)
Magnetic flux crossing square loop is, M= = =
I 2 2
= B ds = 1.386 × 10–7 Henry
µ0 I 138.63 nH
= aˆ ( d dz) aˆ
2
2 1
µ0 I d
= dz
2
=1 z=0
Answers
EE Basics of Electromagnetics (Section-D)
Solutions
EE Basics of Electromagnetics (Section-D)
2
erms So, Em = 1 V/m
Pavg. = As we know, Em = V × B
R
T
(12.5 × 100 × 10 4 )2
where, V = (radius of path) × (angular velocity)
P= × cos 2 t d( t )
0.4 1V
0 = (V × 1 Tesla)
m
2 2 1
= (12.5 × × 10 ) × v = 1 m/sec
2 × 0.4
v = r × = 1 m/sec
= 0.193 Watt
Since, r = 1m
5. Sol. So, = 1 rad/sec
Now from this we get,
1
Voltage induced = Em dl N
= 2× × = 1rad/sec.
0 60
(where Em is induced electric field) 30
N= = 9.55 revolutions/minute
= Em × Volts
Since,
Voltage induced = 1 V
2 Uniform Plane Waves
ELECTRO NICS EN GINEERIN G Q.4 The incoming solar radiation at a place on the
surface of the earth is 1.2 kW/m2. The amplitude
(GATE Previous Years Solved Papers)
of the electric field corresponding to this
Q.1 For an electromagnetic wave incident from one incident power is nearly equal to
medium to a second medium, total reflection (a) 80 mV/m (b) 2.5 V/m
takes place when (c) 30 V/m (d) 950 V/m
(a) the angle of incidence is equal to the [EC-1990 : 2 Marks]
Brewster angle with E field perpendicular
to the plane of incidence. Q.5 The electric field component of a uniform plane
(b) the angle of incidence is equal to the electromagnetic wave propagation in the
Brewster angle with E field parallel to the Y-direction in a lossless medium will satisfy the
plane of incidence. equation
(c) the angle of incidence is equal to the critical 2
Ey 2
Ey
angle with the wave moving from the denser (a) =µ
2
y t2
medium to a rarer medium.
(d) the angle of incidence is equal to the critical 2 2
Ey Ey
angle with the wave moving from a rarer (b) =µ
x2 t2
medium to a rarer medium.
2 2
[EC-1987 : 2 Marks] Ex Ex
(c) =µ
y2 t2
Q.2 In a good conductor the phase relation between
the tangential components of electric field Et and Ex2 + Ez2 µ
the magnetic field Ht is as follows: (d) =
H x2 + H z2
(a) Et and Ht are in phase.
(b) Et and Ht are out of phase. [EC-1991 : 2 Marks]
(c) Ht leads Et by 90°. Q.6 A material is described by the following
(d) Et leads Ht by 45°. electrical parameters at a frequency of 10 GHz,
[EC-1988 : 2 Marks] = 106 /m, µ = µ0 and / 0 = 10. The material
at this frequency is considered to be
Q.3 The skin depth of copper at a frequency of 3 GHz
is 1 micro (10–6 meter). At 12 GHz, for a non 1
0 = × 10 9 F/m .
magnetic conductor whose conductivity is 1/9 36
times that of copper, the skin depth would be
(a) a good conductor
9 (b) a good dielectric
(a) 9 × 4 microns (b) microns
4 (c) neither a good conductor, nor a good
dielectric
4 1
(c) microns (d) microns (d) a good magnetic material
9 9× 4
[EC-1993 : 2 Marks]
[EC-1989 : 2 Marks]
42 Electronics Engineering Electromagnetic Theory
Q.7 A plane wave is incident normally on a perfect (c) conductor or dielectric depending on the
frequency
conductor as shown in figure. Here Exi , H yi and
(d) conductor or dielectric depending on the
P are electric field, magnetic field and pointing
i electric current density
vector, respectively, for the incident wave. The [EC-1995 : 1 Mark]
reflected waver should have Q.11 A uniform plane wave in air is normally
X incident on an infinitely thick slab. If the
refractive index of the glass slab is 1.5, then the
percentage of the incident power that is reflected
j from the air glass interface is
Ex
(a) 0% (b) 4%
Z (c) 20% (d) 100%
Pi
i [EC-1996 : 2 Marks]
Hy
Q.12 Some unknown material has a conductivity of
106 /m and a permeability of 4 × 10–7 H/m.
The skin depth for the material at 1 GHz is
(a) 15.9 µm (b) 20.9 µm
(a) Exr = Exi (b) H yr = H yi
(c) 25.9 µm (d) 30.9 µm
(c) P r = P i (d) Exr = Exi [EC-1996 : 2 Marks]
[EC-1993 : 2 Marks]
Q.13 The intrinsic impedance of copper at high
Q.8 A plane electromagnetic wave travelling along frequency is
the +z-direction, has its electric field given by (a) purely resistive
Ex = 2 cos( t) and Ey = 2 cos( t + 90)° (b) purely inductive
The wave is (c) complex with a capacitive component
(a) linearly polarized (d) complex with an inductive component
(b) right circularly polarized [EC-1998 : 1 Mark]
(c) left circularly polarized
Q.14 The waveform of a wave with propagation
(d) elliptically polarized constant (0.1 + j0.2 ) m–1 is
[EC-1994 : 1 Mark]
2
(a) m (b) 10 m
Q.9 The intrinsic impedance of a lossy dielectric 0.05
medium is given by
(c) 20 m (d) 30 m
j µ j
[EC-1998 : 1 Mark]
(a) (b)
µ
Q.15 The depth of penetration of a wave in a lossy
j µ µ
(c) (d) dielectric increases with increasing
( +j )
(a) conductivity (b) permeability
[EC-1995 : 1 Mark]
(c) wavelength (d) permittivity
Q.10 Copper behaves as a [EC-1998 : 1 Mark]
(a) conductor always
Q.16 The polarization of a wave with electric field
(b) conductor or dielectric depending on the
applied electric field strength vector E = Eo e j( t z)
( ax + ay ) is
GATE Previous Years Solved Paper 43
Q.20 Identify which one of the following will not Q.25 If a plane electromagnetic wave satisfies the
satisfy the wave equation?
2 2
Ex
1 Ex
(a) 50 ej( t – 3z) (b) sin[ (10z + 5t)] equation = 2 , the wave
z2 c t2
(c) cos(y2 + 5t) (d) sin(x) cos(t)
[EC-1999 : 1 Mark] propagates in the
(a) x-direction
Q.21 A plane wave propagation through a medium (b) z-direction
[ r = 8, µr = 2 and = 0] has its electric field (c) y-direction
given by (d) xy-plane at an angle of 45° between the x
E = 0.5sin (10 8 t z) V/m and z-directions
[EC-2001 : 1 Mark]
44 Electronics Engineering Electromagnetic Theory
Q.26 A material has conductivity of 10–2 /m and a The velocity of the travelling wave is
relative permittivity of 4. The frequency at which (a) 3.00 × 108 m/sec
the conduction current in the medium is equal (b) 2.00 × 108 m/sec
to the displacement current is (c) 6.28 × 107 m/sec
(a) 45 MHz (b) 90 MHz (d) 2.00 × 107 m/sec
(c) 450 MHz (d) 900 MHz [EC-2003 : 2 Marks]
[EC-2001 : 2 Marks]
Q.32 A parallel plate air-filled capacitor has plate area
Q.27 A plane wave is characterized by of 10–4 m2 and plate separation of 10–3 m. It is
connected to a 0.5 V, 3.6 GHz source. The
E = (0.5 xˆ + yˆ e j /2
) ej t jkz
magnitude of the displacement current is
The wave is ( 0 = 1/36 × 10–9 F/m)
(a) linearly polarized (a) 10 mA (b) 100 mA
(b) circularly polarized (c) 10 A (d) 1.59 mA
(c) elliptically polarized [EC-2004 : 2 Marks]
(d) unpolarized
jkz j t
[EC-2002 : 2 Marks] Q.33 If, E = ( aˆx + jaˆ y ) e
Air =1
the total internal reflection, the transmitted beam r1
(c) m2 (d) m2
2 (a) 2 (b) 3
[EC-2006 : 2 Marks] (c) 2 (d) 3
Q.38 When a plane wave travelling in free-space is [EC-2007 : 2 Marks]
incident normally on a medium having r = 4.0,
Q.41 A plane wave of wavelength is travelling in a
the fraction of power transmitted into the
direction making an angle 30° with positive
medium is given by
x-axis and 90° with positive y-axis. The E field
8 1
(a) (b) of the plane wave can be represented as
9 2
(E0 is a constant)
1 5 3
(c) (d) j t x z
3 6 (a) E = yˆ E0 e
[EC-2006 : 2 Marks]
3
j t x z
(b) E = yˆ E0 e
Q.39 The H field (in A/m) of a plane wave
propagating in free space is given by 3
j t+ x+ z
(c) E = yˆ E0 e
5 3 5
H = xˆ cos( t z) + yˆ t z+
0 0 2 j t x+
3
z
The time average power flow density in watts is (d) E = yˆ E0 e
[EC-2007 : 1 Mark]
46 Electronics Engineering Electromagnetic Theory
Q.42 A uniform plane wave in the free space is Assuming the speed of light in free space to be
normally incident on an infinitely thick 3 × 108 m/s, intrinsic impedance of free space
dielectric slab (dielectric constant r = 9). The to be 120 , the relative permittivity r of the
magnitude of the reflection coefficient is medium and the electric field amplitude Ep are
(a) 0 (b) 0.3 (a) r = 3, Ep = 120 (b) r = 3, Ep = 360
(c) 0.5 (d) 0.8 (c) r = 9, Ep = 360 (d) r = 9, Ep = 120
[EC-2008 : 2 Marks] [EC-2011 : 2 Marks]
Q.43 The electric field component of a time harmonic Q.46 The electric field a uniform plane
plane EM wave travelling in a non-magnetic electromagnetic wave in free space, along the
lossless dielectric medium has an amplitude of positive x-direction, is given by
1 V/m. If the relative permittivity of the medium j 25x
E = 10( aˆ y + jaˆ z ) e
is 4, the magnitude of the time average power
density vector (in W/m2) is The frequency and polarization of the wave,
respectively are
1 1
(a) (b) (a) 1.2 GHz and left circular
30 60
(b) 4 GHz and left circular
1 1
(c) (d) (c) 1.2 GHz and right circular
120 240
(d) 4 Hz and right circular
[EC-2010 : 1 Mark]
[EC-2012 : 1 Mark]
Q.44 A plane wave having the electric field
Q.47 A plane wave propagating in air with
component, Ei = 24 cos(3 × 10 8 t y ) aˆ z V/m
t + 3x 4 y )
E = (8 aˆ x + 6 aˆ y + 5 aˆ z ) e j( V/m is
and travelling in free space is incident normally
on a lossless medium with µ = µ0 and = 9 0 incident on a perfectly conducting slab
which occupies the region y 0. The reflected positioned at x 0. The E field of the reflected
magnetic field component is given by
waves is
1
(a) cos(3 × 108 t + y ) aˆ x A/m (a) ( 8 aˆ x 6 aˆ y 5 aˆ z ) e j( t + 3x + 4 y )
V/m
10
t + 3x + 4 y )
1 (b) ( 8 aˆx + 6 aˆ y 5aˆ z ) e j( V/m
(b) cos(3 × 108 t + y ) aˆx A/m
20
(c) (8 aˆ x 6 aˆ y 5aˆ z ) e j( t 3x 4 y )
V/m
1
(c) cos(3 × 10 8 t + y ) aˆ x A/m
20 (d) (8 aˆ x + 6 aˆ y 5aˆ z ) e j( t 3x 4 y )
V/m
1
(d) cos(3 × 108 t + y ) aˆx A/m [EC-2012 : 1 Mark]
10
[EC-2010 : 2 Marks] Statement for Linked Answer Questions (48 and 49):
A monochromatic plane wave of wavelength = 600 µm
Q.45 The electric and magnetic fields for a TEM wave
is propagating in the direction as shown in the figure
of frequency 14 GHz in a homogeneous medium
of relative permittivity r and relative below. Ei , Er and Et denote incident, reflected, and
permeability µr = 1 are given by
transmitted electric field vectors associated with the
j( t 280 y ) wave.
E = Ep e uˆ z V/m
H = 3 e j( t 280 y )
uˆ x V/m
GATE Previous Years Solved Paper 47
(b) E = 2 yˆ , H = 3zˆ
i r
r = 1.0
0
x (c) E = + 2 zˆ , H = + 2 yˆ
r = 4.5
(d) E = 3 yˆ , H = + 4 yˆ
19.2° Et
Ht [EC-2014 : 1 Mark]
Q.48 The angle of incidence i and the expression for yˆ 4 sin( t kz + 45°) (mV/m)
Ei are The polarization state of the plane wave is
(a) left elliptical (b) left circular
× 10 4 ( x + z )
Eo j
(a) 60° and ( aˆx aˆ z ) e 3 2 V/m (c) right elliptical (d) right circular
2 [EC-2014 : 2 Marks]
× 10 4 z
Eo j Q.52 Assume that a plane wave in air with an electric
(b) 45° and ( aˆ x + aˆ z ) e 3 V/m
2
field, E = 10 cos( t 3x 3z) aˆ y V/m is
× 10 4 ( x + z )
Eo j
(c) 45° and ( aˆ x aˆ z ) e 3 2 V/m incident on a non-magnetic dielectric slab or
2 relative permittivity 3 which covers the region
× 10 4 z z > 0. The angle of transmission in the dielectric
Eo j
(d) 60° and ( aˆ x aˆ z ) e 3 V/m slab is _______ degrees.
2
[EC-2014 : 2 Marks]
[EC-2013 : 2 Marks]
Q.53 The electric field component of a plane wave
Q.49 The expression for Er is travelling in lossless dielectric medium is given
by
× 10 4 ( x z )
E j
(a) 0.23 o ( aˆ x + aˆ z ) e 3 2 V/m E( z , t ) = aˆ y 2 cos 108 t
z
V/m
2 2
× 10 4 z The wavelength (in m) for the wave is ______ .
Eo j
(b) ( aˆx + aˆ z ) e 3 V/m
2 [EC-2015 : 1 Mark]
In this field, consider a square area 10 cm × 10 cm Q.59 If a right-handed circularly polarized wave is
on a plane x + y = 1. The total time averaged incident normally on a plane perfect conductor,
power (in MW) passing through the square area then the reflected wave will be
is _______ . (a) right-handed circularly polarized
[EC-2015 : 2 Marks] (b) left-handed circularly polarized
(c) elliptically polarized with a tilt angle of 45°
Q.56 The electric field of a uniform plane
(d) horizontally polarized
electromagnetic wave is
[EC-2016 : 1 Mark]
E = ( aˆx + j 2 aˆ y ) exp[ j(2 × 107 t 0.2 z)]
Q.60 Faraday’s law of electromagnetic induction is
The polarization of the wave is
mathematically described by which one of the
(a) right-handed circular following equations?
(b) right-handed elliptical
(a) B=0 (b) D= v
(c) left-handed circular
(d) left-handed elliptical B D
(c) ×E = (d) ×H = E+
t t
[EC-2015 : 1 Mark]
[EC-2016 : 1 Mark]
Q.57 The electric field of a plane wave propagating
Q.61 The expression for an electric field in free space
in a lossless non-magnetic medium is given by
is,
the following expression:
j( t kx + ky )
9 E = E0 ( xˆ + yˆ + j 2 zˆ ) e
E( z , t ) = aˆx 5 cos(2 × 10 t + z)
where, x, y, z represent the spatial coordinates,
9 t represents time, and , k are constants. The
+ aˆ y 3 cos 2 × 10 t + z
2 electric field
GATE Previous Years Solved Paper 49
(a) does not represent a plane wave. Q.64 The distance (in meters) a wave has to propagate
(b) represents a circularly polarized plane in a medium having a skin depth of 0.1 m so
wave propagating normal to the z-axis. that the amplitude of the wave attenuates by
(c) represents an elliptically polarized plane 20 dB, is
wave propagating along the x-y plane. (a) 0.12 (b) 0.23
(d) represents a linearly polarized plane wave. (c) 0.46 (d) 2.3
[EC-2017 : 2 Marks] [EC-2018 : 2 Marks]
Q.62 The permittivity of water at optical frequencies Q.65 The magnitude field of a uniform plane wave in
is 1.75 0. It is found that an isotropic light source vacuum is given by
at a distance ‘d’ under water forms an
illuminated circular area of radius 5 m as shown H ( x , y , z , t ) = ( aˆx + 2 aˆ y + baˆ z ) cos( t + 3x y z)
in the figure. The critical angle is c. The value of b is _______ .
[EC-2020 : 2 Marks]
Answers
EC Uniform Plane Waves
9. (d) 10. (a) 11. (b) 12. (a) 13. (d) 14. (b) 15. (d) 16. (a)
17. (a) 18. (d) 19. (a) 20. (c) 21. (d) 22. (c) 23. (c) 24. (b)
25. (b) 26. (a) 27. (c) 28. (a) 29. (b) 30. (d) 31. (b) 32. (a)
33. (a) 34. (c) 35. (b) 36. (c) 37. (d) 38. (a) 39. (d) 40. (d)
41. (a) 42. (c) 43. (c) 44. (a) 45. (d) 46. (a) 47. (c) 48. (c)
49. (a) 50. (b) 51. (a) 52. (30) 53. (8.88) 54. (0.1) 55. (53.29) 56. (b)
57. (b) 58. (d) 59. (b) 60. (c) 61. (c) 62. (4.33) 63. (2) 64. (b)
Solutions
EC Uniform Plane Waves
2 f1 1
2. (d) =
1 f2 2
= intrinsic impedance
Given that,
Et j µ
= = 1 = 1 micron
Ht +j
GATE Previous Years Solved Paper 51
f 1 = 3 GHz j µ
As, = 0 with being large
2 1
f 2 = 12 GHz =
1 9 when E reflection completely out of phase, H
reflects in phase,
2 3 9 9
= × =
1 12 1 4 Exr = Exi
9 H xr = H xi
2 = microns
4
So, Pr = Pi
4. (d)
8. (c)
Power density,
Two equal E field components out of phase by
E2 90° gives circular polarization,
P=
2 Ex = 2 cos t
E= 2 P Ey = 2 cos( t + 90°) = –2 sin t
= 0 = 120 Tracing with time for sense of rotation as left or
P = 1.2 kW/m2 = 1200 W/m2 right,
t = 0, Ex = 2, Ey = 0
E= 2 × (120 ) × (1200)
T
950 V/m t= , Ex = 0, Ey = –2
4
5. (c, d) Y
When E is a function of y and directed in x and z
possibly orthogonal to propagation,
E y = Hy = 0
2 2 t = T/2 t=0
Ex Ex X
2 = µ 2
Z
y t
E Ex2 + H z2 µ
= = t = T/4
H H x2 + H z2
Left circular for +z propagation.
6. (a)
Loss tangent, 10. (a)
6 A material behave as conductor if,
10
= 9 12
2 (10 × 10 ) (8.854 × 10 × 10)
>>
= 1.798 × 105 >> 1 >>
So, the given material at f = 10 GHz is For copper, conductivity,
considered as a good conductor. = 5.8 × 107 /m
= 8.856 × 10–12 F/m
7. (a, c) So, even at very large frequencies,
Reflection coefficient for electric fields, >>
So, copper always behave as conductor for
j µ
120 practical frequencies.
E = = 1 for conductors
j µ
+ 120
52 Electronics Engineering Electromagnetic Theory
Pi 1 2
Pr = × 100% = 4% of Pi = =
25 µ
So, the depth of penetration of a wave i a lossy
12. (a)
dielectric increases with increasing permittivity.
1 E = Ex ax + Ey ay
=
× 109 × 4 × 10 7 × 10 6 So, Ex = Eo ej( t – z)
4
10 Ey = Eo ej( t – z)
= = 15.9 µm
2
Ex = at any time t
13. (d) So, the polarization of the wave is linear.
We know that,
17. (a)
j µ
Intrinsic impedance = =
+j E = 24 e j( t + z) aˆ y V/m
x
j µ
As, = 0 with s being large
B ( t ) ax
when E reflection completely out of phase, H
reflects in phase,
Er – Ei = 0, Etang should be zero
d m d
V= = ( BA cos ) Hr + Hi = 2Ht, Htang should be maximum
dt dt
A = Area of the loop 23. (c)
with = angle between B and area of loop. 1
sin t
This changes due to rotation, =
sin i r
B(t) = cos t Harmonic
sin 30° 1
d cos dB =
V= AB A cos sin 45° r
dt dt
Rotation Harmonics
motional emf transfer action 1/2 1
=
1/ 2 r
19. (a)
r =2
According to Ampere’s law,
24. (b)
D
×H = J + 1
t v1 =
µ1 1
20. (c)
1
cos(y2 + 5t) does not satisfy the wave equation v2 =
µ2 2
due to non-linearity of phase with distance.
v1 2
21. (d) =
v2 1
j µ v =f
= ; =0 f = frequency of operation
+j
v
µ
= 0° 1 2
=
0 r2
=
r2
=
2 1 0 r1 r1
µ o µr µo µr
= = 25. (b)
o r o r
The E field is a function of z and directed in X.
2 377 i.e., harmonic function of z or travelling in z
= 377 = = 188.5
8 2 direction.
54 Electronics Engineering Electromagnetic Theory
E = j E = 2 × 107
= 0.1
=2 f o r
Comparing with A cos( t – z)
9 × 109 × 2 × 10 2
f = = 2 × 107
2 × o r 4 v = = = 2 × 108 m/s
0.1
f = 45 × 106 = 45 MHz
32. (a)
27. (c)
Displacement current,
E x and E y out of phase by 90°, unequal
Id = AJd
amplitudes. This is elliptical polarization.
D E
= A =A
28. (a) t t
V
Loss tangent = Id = A E =A
d
4 After putting values, we get,
1.7 × 10
= Id = 10 mA
2 × 3 × 10 9 × 78 o
33. (a)
1.7 × 10 4 × 9 × 109
= 1
3 × 109 × 39 Pavg = Re[E × H ]
= 0.13 × 10–4 = 1.3 × 10–5 2
1 k
= Re ( aˆ x + jaˆ y ) e jkz j t × ( aˆ y jaˆ x ) e jkz j t
29. (b) 2 µ
For conductors, k
Pavg = [0] = 0
2µ
2
=
µ 34. (c)
1 = 50,000; = 0.004
f
5 × 10 4
vp = =
2 f1 4 × 10 3
=
1 f2 = 1.25 × 107 m/s
c = 45°
30°
1 m depth; 1 m radius 30°
Area = R2 =
Z
38. (a)
Pt = (1 – 2) Pi
µo µo Wave is travelling in the ZX-plane (90° to -axis)
2 1 o r o and 30° to X-axis,
= =
2 + 1 µo µo 2 3 3
+ = cos 30° = =
x
o r o 2
1
1 = sin 30° =
2 1 z
= 1 =
+1 3 The two solutions possible are shown as P1 and
2 P2 paths in the diagrams, options (a) is P2.
2 1 8
= 1 =1 = 42. (c)
9 9
Pt = Pi Dielectric constant of free space,
Pt 8 r1 =1
=
Pi 9 Dielectric constant of dielectric slab,
39. (d) r2 =9
E2 r1 r2 1 3 2
P= ; E= 0H = = = = 0.5
2 0 r1 + r2 1+ 3 4
2 2 2
0H 0H
P= = 43. (c)
2 0 2
Magnitude of the time-average power density
1 10
H= (5 3)2 + (5)2 = vector,
0 0
100 50 E2
P=
0
× = Watts Pavg =
2 2 2
0 0
56 Electronics Engineering Electromagnetic Theory
µ 1
where, = v = f = 14 × 10 9 × m/sec
140
v = 1 × 108 m/sec
µo 120
= = 0 = C
4 2 2 But, v =
r µr
12 1 2
Pavg = = W/m
120 120 3 × 108
2 1 × 108 =
2 1× r
r =9
44. (a)
EP
=
Ei = 24 cos(3 × 108 t – y) aˆ z V/m HP
The wave is travelling in +y-direction, µ µ0 × 1 1 µ0
= = =
1 0 ×9 3 0
Hi = ( aˆ y × Ei )
EP 1
24 cos = × 120
3 3
= (3 × 108 t y ) aˆ x
120 EP = 120
1
= cos(3 × 108 t y ) aˆx 46. (a)
5
Out of phase by 90° and equal amplitude the
µ0 µ0 wave is circularly polarized.
Hr 1 2 1 2 Check the trace of E with the time which gives
= =
Hi 1+ 2 µ0 µ0 left circularly polarized,
+
1 2 a y = sin t
az = cos t
2 1 9 1
= = 47. (c)
2 + 1 9+ 1
3 1 2 1 Y Free space
= = =
3+1 4 2 X > 0 Reflected
X<0
Therefore, reflected magnetic field component, conductor
1
Hr = cos(3 × 108 t + y ) aˆ x 3a x + 4 a y
10
Due to change in propagation direction to –y. x
45. (d) i
H = 3 e j( t 280 y )
Uˆ x V/m Incidence
v = 3 × 108 m/s
From given expression we conclude that, Incident wave propagation 3aˆ x + 4 aˆ y
2
= 280 = Reflected wave propagation 3aˆ x + 4 aˆ y
1 Ei incident direction 8 aˆ x + 6 aˆ y + 5 aˆ z
= meter
140
GATE Previous Years Solved Paper 57
x = z = cos 45° =
2
(For propagation direction)
aˆ aˆ z X
For field direction = x (45°) Z
2 at t = 0 (Ex = 1.5, Ey = –2.83)
49. (a)
at t = T/6 (Ex = 0, Ey = –3.86)
For reflected wave:
Er propagation direction changes without This is left elliptical polarized plane-wave.
change in angle 45°.
aˆx aˆ z 52. Sol.
Er propagation direction =
2 X
reflection coefficient,
= –0.23 Air Z < 0
Z>0 R = 3
Er field direction suitably changes satisfying,
E P=0 Pr
50. (b) z
t
Z
Since the TEM wave or plane wave is travelling i
should be
Pi
P = E× H
Wave
ˆax = aˆ y × aˆ z incidence
or, aˆx = ( aˆ y ) × ( aˆ z )
So, the option (b) is satisfies the condition. x = 3, z = 3 from Ei of the wave
i = 60°
51. (a)
sin 60°
= 3
E( z , t ) = 3xˆ cos( t kz + 30°) sin t
4 yˆ sin ( t kz + 45°) t = 30°
58 Electronics Engineering Electromagnetic Theory
53. Sol.
Pavg = P ds
8 z
E( z , t ) = aˆ y 2 cos 10 t V/m 1 (24 )2 aˆx + aˆ y 2
2 = aˆ x × 10
2 120 2
General form of
24
E( z , t ) = aˆ y Eo cos( t z) V/m Pavg = = 53.29 mW
2
Comparing both, we get,
1 57. (b)
=
2 9
E ( z , t ) = aˆx 5 cos(2 × 10 t + z)
2
Since, = + aˆ y 3 cos 2 × 109 t + z
2
2 2
= = =2 2 m • Wave is travelling in aˆ z direction.
1/ 2
= 8.88 m • Wave has orthogonal components with
unequal amplitudes and checking the time
54. Sol. trace.
Material has µR and R complex, Wave is left hand elliptically polarized.
of material =
j µ µoµR 58. (d)
= = 120
+j o R
( ) is known so Vg can be calculated.
where, = 0 (dielectric) vp = / can be calculated.
No reflections at the boundary, Polarization can be identified.
µr and r cannot be found, due to which power
= Propagation constant
flux cannot be calculated as power flux,
= j µ oµ R (0 + j o R) 2
1 E
P=
= j µo R (1 j 2)2 2
µo +2 µo µr
= j o o where, = 120 ×
r
= 2 µo o = 46.07 Np/m
59. (b)
Magnitude of transmitted electric field
Left circularly polarized, due to direction change
component,
after the reflection from conductor.
E = Eo e– z with Z = 0.1 m
E = 0.1 V/m 60. (c)
Rate of change of magnetic field results in
55. Sol. induced voltage,
E( x , t ) = aˆ y 24 cos( t K o x ) V/m B
×E =
t
Power density,
2 2 61. (c)
1 E 1 (24 )
P = 2 = aˆ x
2 120 E field direction ( aˆ x + aˆ y + j 2 aˆ z )
Time-averaged power passing through square Propagation direction k aˆ x k aˆ y
area,
GATE Previous Years Solved Paper 59
E is perpendicular to propagation, Eo
20 log 10 = 20 dB
E P =0 Ex
1 2 1 0 65. Sol.
c = sin = sin = 49.1°
1 1.75 0 For uniform plane wave,
5m aˆ H aˆ = 0
d c 1 aˆx + 2 aˆ y + b aˆ z
aˆ H =
12 + 2 2 + b 2
3 aˆ x + aˆ y + aˆ z
5 â =
tan 49.1 = 1.1547 =
d 3 2 + 1 2 + 12
5 aˆ H aˆ = 0
d = = 4.33 m
1.1547
( aˆ x + 2 aˆ y + baˆ z ) ( 3 aˆx + aˆ y + aˆ z ) = 0
63. Sol. –3 + 2 + b = 0
The wave has Ei direction and propagation b=1
direction both in same plane (ZX).
66. (d)
The wave is plane of incidence (P) polarized,
Reflecting
x = 1, z = 2
surface
z
tan i = = 2 Medium 2 Medium 1
x lossless medium free space
No reflection in P polarized wave under 2 = 0, µ 2 = 4µ0 1 = 2, µ 1 = µ0, 1 = 0 = 120
r =2
x=0
4
1
P
x = –0.5 z /2
x = –1
Load
64 Electronics Engineering Electromagnetic Theory
Q.26 The value of the load resistance is Q.31 The parallel branches of a 2-wire transmission
(a) 50 (b) 200 line are terminated in 100 and 200 resistors
(c) 12.5 (d) 0 as shown in the figure. The characteristic
impedance of the line is Z0 = 50 and each
[EC-2005 : 2 Marks]
section has a length of /4. The voltage
Q.27 The reflection coefficient is given by reflection coefficient at the input is
(a) –0.6 (b) –1
(c) 0.6 (d) 0 /4
[EC-2005 : 2 Marks] /4 0
=5
Q.28 Many circles are drawn in a Smith chart used Z0 100
for transmission line calculations. The circles
shown in the figure represent
Z0 = 50
Z 200
0 =5
0
/4
7 5
(a) j (b)
(a) unit circles 5 7
(b) constant resistance circles 5 5
(c) j (d)
(c) constant reactance circles 7 7
[EC-2007 : 2 Marks]
(d) constant reflection coefficient circles
[EC-2005 : 2 Marks] Q.32 A load of 50 is connected in shunt in a 2-wire
transmission line of Z0 = 50 as shown in the
Common Data for Questions (29 and 30):
figure. The 2-port scattering parameter matrix
A 30 Volts a battery with zero source resistance is
(S-matrix) of the shunt element is
connected to a co-axial line of characteristic impedance
of 50 at t = 0 seconds and terminated in an unknown
resistive load. The line length is such that it takes 400 µs
for an electromagnetic wave to travel from source end Z0 = 50 50 Z0 = 50
Q.33 In the design of a single mode step index optical Q.37 In the circuit shown, all the transmission line
fiber close to upper cut-off, the single-mode sections are lossless. The Voltage Standing
operation is not preserved if Wave Ratio (VSWR) on the 60 line is
(a) radius as well as operating wavelength are Short
halved. Z0 = 30
/8
(b) radius as well as operating wavelength are
doubled.
(c) radius is halved and operating wavelength Z0 = 60 Z0 = 30 2 ZL = 30
is doubled.
(d) radius is doubled and operating /4
wavelength is halved.
(a) 1.00 (b) 1.64
[EC-2008 : 2 Marks]
(c) 2.50 (d) 3.00
Q.34 One end of a lossless transmission line having [EC-2010 : 2 Marks]
the characteristic impedance of 75 and length
of 1 cm is short-circuited. At 3 GHz, the input Q.38 If the scattering matrix [S] of a two-port network
impedance at the other end of the transmission is
line is 0.2 0° 0.9 90°
[S ] =
(a) 0 (b) resistive 0.9 90° 0.1 90°
(c) capacitive (d) inductive then the network is
[EC-2008 : 2 Marks] (a) lossless and reciprocal
Q.35 A transmission line terminates in two branches, (b) lossless but not reciprocal
each of length /4, as shown. The branches are (c) not lossless but reciprocal
terminated by 50 loads. The lines are lossless (d) neither lossless nor reciprocal
and have the characteristic impedances shown.
[EC-2010 : 1 Mark]
Determine the impedance Zi as seen by the
source. Q.39 A transmission line of characteristic impedance
50 is terminated by a 50 load. When excited
/4 Z L = 50 by a sinusoidal voltage source at 10 GHz, the
/4 00
=1 phase difference between two points spaced
Z0
2 mm apart on the line is found to be /4 radians.
Z0 = 50
The phase velocity of the wave along the line is
Z
0 =1
00 (a) 0.8 × 108 m/s (b) 1.2 × 108 m/s
Zi
/4 Z L = 50 (c) 1.6 × 108 m/s (d) 3 × 108 m/s
[EC-2011 : 1 Mark]
(a) 200 (b) 100
(c) 50 (d) 25 Q.40 A transmission line of characteristic impedance
[EC-2009 : 2 Marks] 50 is terminated in a load impedance ZL. The
VSWR of the line is measured as 5 and the first of
Q.36 A transmission line has a characteristic
the voltage maxima in the line is observed at a
impedance of 50 and a resistance of 0.1 /m.
If the line is distortionless, the attenuation distance of /4 from the load. The value of ZL is
constant (in Np/m) is (a) 10
(a) 500 (b) 5 (b) 250
(c) 0.014 (d) 0.002 (c) (19.23 + j46.15)
[EC-2010 : 1 Mark] (d) (19.23 – j46.15) [EC-2011 : 2 Marks]
66 Electronics Engineering Electromagnetic Theory
Q.41 A coaxial cable with an inner diameter of 1 mm Q.46 To maximize power transfer, a lossless
and outer diameter of 2.4 mm is filled with a transmission line is to be matched to a resistive
dielectric of relative permittivity 10.89. Given, load impedance via a /4 transformer as shown.
G = 0.04 S/m
0 0.5 1 1.5 2 2.5 f (in GHz)
[EC-2016 : 1 Mark]
The length L (in meters) of T2 is ______ .
Q.55 A lossless microstrip transmission line consists
of a trace of width w. It is drawn over a practically [EC-2016 : 2 Marks]
infinite ground plane and is separated by a Q.57 Light from free space is incident at an angle i
dielectric slab of thickness t and relative to the normal of the face of a step-index large
permittivity r > 1. The inductance per unit core optical fibre. The core and cladding
length and the characteristic impedance of this refractive indices are n1 = 1.5 and n2 = 1.4,
line are L and Z0, respectively. respectively.
W
= 0
n2 (cladding)
Free space
= 0 r, r >1 t n1 (core)
i
Light
GATE Previous Years Solved Paper 69
The maximum value of i (in degrees) for which (a) P : Open-circuit, Q : Short-circuit,
the incident light will be guided in the core of R : Matched load
the fibre is ______ . (b) P : Open-circuit, Q : Matched load,
[EC-2016 : 1 Mark] R : Short-circuit
(c) P : Short circuit, Q : Matched load,
Q.58 The voltage of an electromagnetic wave
R : Open-circuit
propagating in a coaxial cable with uniform
characteristic impedance is V(l) = e– l + j t Volts, (d) P : Short circuit, Q : Open-circuit,
where l is the distance along the length of the R : Matched load
cable in meters, = (0.1 + j40) m–1 is the complex [EC-2018 : 1 Mark]
propagation constant, and = 2 × 106 rad/s is
Q.62 A lossy transmission line has resistance per unit
the angular frequency. The absolute value of the
length R = 0.05 /m. The line is distortionless
attenuation in the cable (in dB/meter) is ____ .
and has characteristic impedance of 50 . The
[EC-2017 : 1 Mark]
attenuation constant (in Np/m correct to three
Q.59 A two-wire transmission line terminates in a decimal places) of the line is ______ .
television set. The VSWR measured on the line [EC-2018 : 1 Mark]
is 5.8. The percentage of power that is reflected
from the television set is _______ . Q.63 A transmission line of length 3 /4 and having
[EC-2017 : 1 Mark] a characteristic impedance of 50 is terminated
with a load of 400 . The impedance (rounded
Q.60 An optical fibre is kept along the zˆ -direction. off to two decimal places) seen at the input end
The refractive indices for the electric fields along of the transmission line is ______ .
and ny = 1.5001, respectively (nx ny due to the Q.64 The impedances Z = jX for all X in the range
imperfection in the fibre cross-section). The free (– , ), map to the Smith chart as,
space wavelength of a light wave propagating (a) a circle of radius 0.5 with center at (0.5, 0).
in the fibre is 1.5 µm. If the light wave is (b) a point at the center of the chart.
circularly polarized at the input of the fibre, the (c) a line passing through the center of the
minimum propagation distance after which is chart.
becomes linearly polarized (in centimeters), is
(d) a circle of radius 1 with center at (0, 0).
________ .
[EC-2020 : 1 Mark]
[EC-2017 : 2 Marks]
Q.65 The impedance matching network shown in the
Q.61 The points P, Q and R shows on the Smith chart
figure is to match a lossless line having
(normalized impedance chart) in the following
characteristic impedance Z0 = 50 with a load
figure represent:
impedance ZL. A quarter wave line having a
characteristic impedance Z1 = 75 is connected
to Z L . Two stubs having characteristic
impedance of 75 each are connected to this
P R quarter wave line. One is a short-circuited (S.C.)
Q
stub of length of 0.25 connected across PQ and
the other one is an open-circuit (O.C.) stub of
length 0.5 connected across RS.
70 Electronics Engineering Electromagnetic Theory
ub
O.C 75
S.C = 75
ub
. st
1 =
. st
1
Z
0.5
Answers
EC Transmission Lines
9. (a) 10. (b) 11. (b) 12. (b) 13. (b) 14. (c) 15. (b) 16. (c)
17. (b) 18. (d) 19. (b) 20. (a) 21. (c) 22. (a) 23. () 24. (d)
25. (d) 26. (c) 27. (a) 28. (b) 29. (d) 30. (b) 31. (d) 32. (b)
33. (d) 34. (d) 35. (d) 36. (d) 37. (b) 38. (c) 39. (c) 40. (a)
41. (*) 42. (c) 43. (a) 44. (b) 45. (40) 46. (70.72) 47. (33.3) 48. (c)
49. (b) 50. (b) 51. (d) 52. (120.22) 53. (30) 54. (b) 55. (b) 56. (0.1)
57. (Sol.) 58. (0.868) 59. (49.83) 60. (Sol.) 61. (c) 62. (0.001) 63. (6.25) 64. (d)
65. (d)
GATE Previous Years Solved Paper 71
Solutions
EC Transmission Lines
2. (b) 6. (c)
/2 length transmission line has Zin = ZL and ZL Zo
hence cannot be a impedance matching device. Reflection coefficient = =
ZL + Zo
3. (d) j 50 50 50 + j 50
= =
ZL Z0 j 50 + 50 50 + j 50
Reflection coefficient = =
ZL + Z0
(50)2 + (50)2
j 100 50 = =1
= (50)2 + (50)2
j 100 + 50
1+ 1+1 2
2 2 VSWR = = = =
(100) + (50) 1 1 1 0
= =1
(100)2 + (50)2
7. Sol.
1+ 1+1 2 For quarter wave line transformer,
VSWR = = = =
1 1 1 0
Z02 = Zin ZL
4. (c) Z02 = (50) (200)
For a quarter wave transformer ( /4), Z 0 = 100
Z02
Zin = 8. Sol.
ZL
(False)
ZL = 0
For a pure resistive load of a lossless line,
Z02 RL
Zin = = VSWR = if RL > R0
0 R0
5. (b, c) R0
VSWR = if R0 > RL
For a distortionless line,
RL
RC = LG Given that, VSWR = 3
So, RL = VSWR × R0
= RG
= 3 × 75 = 225
= LC R0 75
or, RL = = = 25
L VSWR 3
Zo = Ro = (real)
c Hence, RL = 25 or 75
72 Electronics Engineering Electromagnetic Theory
9. (a) R0 + jR0
Zin = R0 = R0
For quarter wave transformer ( /4), R0 + jR0
Z02
Zin = 13. (b)
ZL
Adjacent volt maximum are at /2 distance.
ZL = 0
27.5 – 12.5 =
Z02 2
Zin = = = open-circuit
Z0 = 30 cm = 0.3 m
Vs Vs c 3 × 108
Is = = =0 f= = = 1 GHz
Zin 0.3
14. (c)
10. (b)
Electrical path length = l deg or rad,
L 1 1
Z0 = =
C v =
LC 10 × 10 × 40 × 10 12
6
L = 0.5 × 108
Z02 =
C
v 0.5 × 108
L= Z02C = =
f 25 × 106
1 1 1 2 2 × 0.5 × 25 × 10 6
v = = = ×l =
LC ( Z02C ) (C ) Z0C l=
0.5 × 10 8
23. (d)
Z0
Emax
SWR =
ZL = 100 Emin
Z0 Z0 5 Emin
s= =5
/2 Emin
1+ 2
2 5 = ; =
= 1 3
As, 2 < 1
2
For Yd , d= × = 2 120
2 2
= 2 = 24
Zo [ZL + jZo tan d ]
3 1 + 120
Zd =
Zo + jZL tan d 24. (d)
50[100 + j 50 tan ] 1+ 1+
Zd = = 100 SWR = 2=
(50 j 100 tan ) 1 1
1 1 Voltage reflection coefficient,
Yd = = = 0.01
Zd 100 1
=
2 3
For Ys , d= × = , ZL 0 Power reflection coefficient,
8 4
Pref 2 1
= =
Zo ZL + jZo tan Pinc 9
4
Zs = = jZo
11.11% of Pi is reflected.
Zo + jZL tan
4
25. (d)
1 1
Ys = = = 0.02 j
Zs jZo Z02 = ZOC ZSC
Y = Yd + Ys = 0.01 – 0.02j 50 × 50 50 50(2 3 j )
ZSC = = =
21. (c) 100 + j 50 2 + 3 j 13
ZSC = 7.69 – 11.54j
The /4 line has Zin = 0 as ZL =
V 26. (c)
Current Iin into the line = = 0.2 A
50 Vmax 4
S= = =4
Using current equation of the line, Vmin 1
jVL Zmax = Zo S
I(x) = Iin = IL cos x + sin x
Zo Zo
Zmin =
S
with x = , I L = 0 as ZL =
4 The diagram shows that minima is at load.
Open-circuit end voltage, 50
ZL = Zmin = = 12.5
VL = 60 V 4
74 Electronics Engineering Electromagnetic Theory
V = 40 V 34. (d)
t = 400 µs
t = 0s It is a short-circuit line with l = 1 cm.
10 V reflects to add to 30 V in phase and gives
3 × 108
40 V, As, = = 0.3 = 30 cm
3 × 10 9
Vr 10 1
= = =
Vi 30 3 <
4
ZL Zo The line has inductive nature.
=
ZL + Zo As, ZSC = jZo tan l
1 ZL 50
= 35. (d)
3 ZL + 50
ZL = 100 Zo2 (100)2
Z1 = = = 200
ZL1 50
30. (b)
In steady-state, Zo2 (100)2
Z2 = = = 200
VL = 30 V Z2 50
30 ZL = Z1 Z2 = 100
IL = = 0.3 A
100
Zo2 (50)2
31. (d) Zi = = = 25
ZL 100
/4
36. (d)
For distortionless transmission line,
Zo = 50 R1 R2 LR = RC
L R
=
C G
Zo2 Characteristic impedance,
Zin = ; if l =
ZL 4 L R
Zo = =
C G
502
R1 due to 100 = = 25 Attenuation constant,
100
502 25 R R 0.1
= = RG = R = =
R2 due to 200 = Zo Zo 50
200 3
25 25 = 0.002 Np/m
R1 R2 = 25 =
2 3
GATE Previous Years Solved Paper 75
2 2
0 + j 30 tan Phase difference = (Path difference)
8
Z 1 = 30
30 + 0 2
= (2 × 10 3 )
4
Z 1 = j30 = 8 × 2 × 10–3
Input impedance for /4 line, = 16 × 10–3 m
2 f = 10 GHz = 10 × 109 Hz
30 + j 30 2 tan
4 Hence the phase velocity of wave along the line
Z 2 = 30 2
2 is,
30 2 + j 30 tan
4 v =f
= 10 × 109 × 16 × 10–3 m/sec
30
+ j 30 2 v = 1.6 × 108 m/s
tan /2
= 30 2 = 60
30 2 40. (a)
+ j 30
tan /2
1+
VSWR = 5 =
(30 2 )2 1
or, Z2 = = 60
30
2 2
Load impedance, ==±
3 3
ZL = Z1 + Z2 = j30 + 60 If maximum is at /4 from load then minimum
Magnitude of reflection coefficient, will be at load itself.
ZL Zo 60 + j 30 60 For the phase of ,
= =
ZL + Zo 60 + j 30 + 60 2 xmax = 2n +
j 30 j1 where xmax is distance of Vmax from load,
= =
120 + j 30 4+ j 2
2 =
1 1 4
= =
16 + 1 17 2
=
VSWR on 60 line, 3
1 2 Z Zo ZL 50
1+ Now, = L =
1+ 17 = 1.64 3 ZL + Zo ZL + 50
VSWR = =
1 1 ZL = 10
1
17
76 Electronics Engineering Electromagnetic Theory
= ( R + j L ) (G + j C ) V(l) = Vo e– l e–j l e j t
Input Vo (0)
R+ j L Attenuation = =
Zo = Output Vo (l )
G+ j C
y Zo = R+j L Vo
Attenuation per meter = =e
= (2 + j5) (50 – j0) Vo (1 m)
= 100 + j250 Attenuation in dB/m = (20 log e ) dB/m
R= 100 /m = 20(0.1) log e = 0.868 dB/m
250 250
L= = = 250 µH/m 59. Sol.
10 6
Given that,
2 + j5
= = G + j C = 0.04 + j0.1 VSWR (or) s = 5.8
Zo 50
1+
G = 0.04 S/m s= = 5.8
1
0.1 0.1
C= = = 0.1 µF/m = Reflection coefficient
10 6
of television set
56. Sol. s 1 4.8
= = = 0.70588
At frequency of 1 GHz the line is matched and s + 1 6.8
Preflected
= 0 as seen in the graph. = 2 = 0.4983 or 49.83%
Pincident
T1 T2
60. Sol.
Open-circuit
Initially the wave is circularly polarized. So, the
50 50
initial phase difference between field
components in aˆx direction and aˆ y direction is
The line T1 is having 50 load parallel to T2 /2.
input impedance. To become linearly polarized, the wave must
This load is 50 when T2 input impedance is travel a minimum distance, such that, the phase
infinite, difference at that point between the field
Zin 2 = = ZL2 (open-circuit) components in aˆx direction and aˆ y direction is
T2 has to be a /2 line,
(i.e., the travel of this minimum distance
f = 1 GHz
should provide an additional phase difference
2 × 1010 of /2 between aˆx and aˆ y field components).
= cm
1 × 109
0
zmin =
4(nx ~ ny )
Zo = 50 ZL = 400
1.5
= µm
4(1.5 ~ 1.5001)
1.5 1.5
= µm = cm Zin
4(0.0001) 4
zmin = 0.375 cm Zo2 502 25
Zin for ( = /4) = = = = 6.25
ZL 400 4
61. (c)
For short-circuit, 64. (d)
r = x=0 Point “P” For given impedance normalized impedance is
For open-circuit,
Z jX
r = x= Point “R” =
Zo Zo
For matched load,
Z = jX
r = 1 and x = 0 Point “Q”
Z = 0 + jX
P : Short-circuit
Normalized resistance = 0 r = 0
Q : Matched load
X = – to
R : Open-circuit
r = 0 and X from – is a unit circle (radius 1)
62. Sol. and center (0, 0) on a complex reflection
For a distortionless transmission line, coefficient plane:
L C i
=
R G r=0
Propagation constant,
= + j = ( R + j L ) (G + j C )
r
L
= RG 1 + j
R
Attenuation constant,
= RG 65. (d)
Characteristic impedance,
0.25
P R
( R + j L) R
Zo = = 0.25
(G + j C ) G Z1 = 75
Z0 = 50 ZL
R
G =
Zo Q
ub
O.C 75
S.C = 75
ub
. st
R R
1 =
. st
So, = R =
1
Z
Z
Zo Zo 0.5
0.05 0.01
= = = 0.001 Np/m Inverter
50 10
Mirror
80 Electronics Engineering Electromagnetic Theory
752 5625
ZPQ = = (ZL = RL)
ZL RL
4 Waveguides
(a) no attenuation y
(b) no cut-off
(c) no magnetic field component (c)
(d) the highest cut-off wavelength
[EC-2001 : 1 Mark] x
y
Q.10 The phase velocity for the TE10 mode in an air
filled rectangular waveguide is
(d)
(a) less than c (b) equal to c
(c) greater than c (d) none of the above x
Note: (c) is the velocity of plane waves in free [EC-2005 : 2 Marks]
space.
[EC-2002 : 1 Mark] Q.14 A rectangular waveguide having TE10 mode as
dominant mode is having a cut-off frequency of
Q.11 A rectangular metal wave guide filled with a 18 GHz for the TE30 mode. The inner broad wall
dielectric material of relative permittivity r = 4 dimension of the rectangular waveguide is
has the inside dimensions 3.0 cm × 1.2 cm. The (a) 5/3 cm (b) 5 cm
cut-off frequency for the dominant mode is
(c) 5/2 cm (d) 10 cm
(a) 2.5 GHz (b) 5.0 GHz
[EC-2006 : 2 Marks]
(c) 10.0 GHz (d) 12.5 GHz
[EC-2003 : 2 Marks] Q.15 An air filled rectangular waveguide has inner
dimensions of 3 cm × 2 cm. The wave impedance
Q.12 The phase velocity of an electromagnetic wave of the TE 20 mode of propagation in the
propagating in a hollow metallic rectangular waveguide at a frequency of 30 GHz is (free
waveguide in the TE10 mode is space impedance 0 = 377 )
(a) equal to its group velocity. (a) 308 (b) 355
(b) less than the velocity of light in free space. (c) 400 (d) 461
(c) equal to the velocity of light in free space. [EC-2007 : 2 Marks]
(d) greater than the velocity of light in free
space. Q.16 The E field in a rectangular waveguide of inner
[EC-2004 : 1 Mark] dimensions a × b is given by
(a) 6.25 GHz (b) 6.0 GHz The phase velocity vp of the wave inside the
(c) 5.0 GHz (d) 3.75 GHz waveguide satisfies
[EC-2008 : 2 Marks] (a) vp > c (b) vp = c
(c) 0 < vp < c (d) vp = 0
Q.18 Which of the following statements is true
[EC-2012 : 2 Marks]
regarding the fundamental mode of the metallic
waveguides shown? Q.21 For a rectangular waveguide of internal
dimensions a × b (a > b), the cut-off frequency for
the TE11 mode is the arithmetic mean of the
P : Coaxial Q : Cylindrical cut-off frequencies for TE10 mode and TE20
mode. If a = 5 cm, the value of b (in cm) is _____.
[EC-2014 : 2 Marks]
R : Rectangular
(a) Only P has no cut-off frequency. Q.22 Consider an air filled rectangular waveguide
with a cross-section of 5 cm × 3 cm. For this
(b) Only Q has no cut-off frequency.
waveguide, the cut-off frequency (in MHz) of
(c) Only R has no cut-off frequency.
TE21 mode is _______ .
(d) All three have cut-off frequencies.
[EC-2014 : 2 Marks]
[EC-2009 : 1 Mark]
Q.23 The longitudinal component of the magnetic
Q.19 The modes in a rectangular waveguide are
field inside an air filled rectangular waveguide
denoted by TEmn/TMmn where ‘m’ and ‘n’ are
made of a perfect electric conductor is given by
the eigen numbers along the larger and smaller
the following expression:
dimensions of the waveguide respectively.
H z (x, y, z, t) = 0.1 cos(25 x) cos(30.3 y)
Which one of the following statements is true?
cos(12 × 109t – z) A/m
(a) The TM10 mode of the waveguide does not
The cross-sectional dimensions of the
exist.
waveguide are given as a = 0.08 m and
(b) The TE10 mode of the waveguide does not
b = 0.033 m. The mode of propagation inside the
exist.
waveguide is
(c) The TM10 and the TE10 modes both exist
and have the same cut-off frequencies. (a) TM12 (b) TM21
(d) The TM10 and the TE01 modes both exist (c) TE21 (d) TE12
and have the same cut-off frequencies. [EC-2015 : 2 Marks]
[EC-2011 : 1 Mark] Q.24 An air filled rectangular waveguide of interval
Q.20 The magnetic field along the propagation dimensions a cm × b cm (a > b) has a cut-off
direction inside a rectangular waveguide with frequency of 6 GHz for the dominant TE10 mode.
the cross-section shown in figure is For the same waveguide, if the cut-off frequency
of the TM 11 mode is 15 GHz, the cut-off
y
frequency of the TE01 mode (in GHz) is _____ .
[EC-2015 : 2 Marks]
Answers
EC Waveguides
9. (d) 10. (c) 11. (a) 12. (d) 13. (d) 14. (c) 15. (c) 16. (a)
17. (a) 18. (a) 19. (a) 20. (a) 21. (2) 22. (7810) 23. (c) 24. (13.75)
25. (158) 26. (c) 27. (b) 28. (0.75) 29. (1.732) 30. (d) 31. (1.19 or 1.20)
32. (a, c) 33. (a, c)
Solutions
EC Waveguides
1. (a, b) 2
fc
2 2 vg = c 1
vo m n f
fc = +
2 a b
3. (a, c)
c
where, vo =
µr r =
g 2
fc
2 2 1
c m n f
fc = +
µr r ×2 a b
g >
So, fc depends on ‘a’ and ‘b’ (dimensions of
0
waveguide), TE =
2
fc
1 1
fc f
µr r
TE > 0
So, fc depends upon the dielectric property of
2
the medium in the waveguide. fc
TM = 0 1
f
2. (a, b)
v p > c > vg TM < 0
1 c
c vp = = = 2
vp = µ fc
2
fc µr r 1
1 r
f
vp > c
86 Electronics Engineering Electromagnetic Theory
4. Sol. 8. (a)
1 1 c c
v = = Vp = =
µ µ0 0 r cos 2
fc
1 1 1
= × f
µ0 0 r
with f > fc, Vp > c always.
8
3 × 10
v = = 1.5 × 108 m/sec 9. (d)
4
m = n=1 Dominant mode in waveguide has lowest cut-
off frequency and hence the highest cut-off
2 2
v m n wavelength.
fc = +
2 a b
10. (c)
8 2 2
1.5 × 10 3 4 c c
= + × 102 Vp = =
2 20 20 cos 2
fc
1
7.5 × 109 f
fc = × 5 = 1.875 × 10 9 Hz
20 with f > fc, Vp > c always.
8
v 1.5 × 10 11. (a)
= = = 8 cm
c
f c 1.875 × 109
c 3 × 108
So, waves of free space wavelength shorter than v = = = 1.5 × 108
r 2
8 cm can be propagated,
c = 8 cm v 1.5 × 108
fc = = 2
= 2.5 GHz
c 6 × 10
5. (a)
a = 10 cm v 1.5 × 10 8
or, fc = = = 2.5 GHz
2 a 6 × 10 2
vo
fc =
2a 13. (d)
vo = 3 × 1010 cm/sec Two maxima in the field along y-direction
10
3 × 10 identifies TE02.
fc = = 1.5 × 109
2 × 10
14. (c)
= 1.5 GHz
2a 2a
TE30 : = =
6. (b) c
m 3
A pure TEM mode is not possible in single c 3 × 108 1
conductor waveguide such as rectangular or c = = 9
=
f 18 × 10 60
cylindrical waveguide.
1 2a
=
7. (c) 60 3
= 2 a (For TE10 dominant mode) 1 5
c a= = 2.5 cm = cm
= 2 × 1 cm = 2 × 10–2 m 40 2
c 3 × 108 2 2 3 × 1010
fc = = = 1010 Hz f c = ( (2.094) + (2.618) ) ×
3 × 10 2 2 × 3.14
c
= 16 GHz
377
= = 6.283 × 1010
TE 2 2
fc 1010 f= = 10 GHz
1 1 2 × 3.14
f 3 × 1010 Hence, f < fc ; = + j0
= 400
= 0, Vp = =
16. (a)
The wave is E(x, z, t) with no propagation in 21. Sol.
y-direction. Cut-off frequency of a rectangular waveguide is
This is possible only in TE waves when n = 0
2 2
c m n
n fc = +
cos y = 1 2 a b
b
2
17. (a) c 1 c
fc for : TE10 = =
2 a 2a
Minimum operating frequency,
2
c m 2
n 2 c 2 c
f0 = + fc for : TE20 = =
2 a b 2 a 2a
For TE11 mode, 2 2
c 1 1
2 2 fc for : TE11 = +
3 × 108 1 1 2 a b
f0 = +
2 0.04 0.03 fc TE + fcTE
10 20
8 Given, fcTE =
3 × 10 0.05 11 2
= ×
2 0.04 × 0.03 c c
= 6.25 GHz 2 2 +
c 1 1 2a a
+ =
2 a b 2
18. (a)
2 2 1 1 3
P is co-axial line and support TEM wave. 1 1 + =
+ =
P has no cut-off frequency, a b 2a a 2a
Q and R are waveguides and cut-off frequency 2 2
1 1 9
of each depends upon their dimensions. + =
a b 4 a2
19. (a) 2
1 5
In case of rectangular wave guide TEmn exists =
b 4 a2
for all values of m and n except m = 0 and n = 0.
For TMmn to exist both values of m and n must be 2a 2 × 5
b= =
non-zero. 5 5
2 2 25. Sol.
c m n
fc = + Operation frequency = 10 GHz
2 a b
Cut-off frequency for TE10,
2 2
c 2 1 c 3 × 10 8
fcTE = + =
fc =
21 2 5 cm 3 cm 2 a 2 × 2.286 × 10 2
= 6.57 GHz
2 2
3 × 108 2 × 100 100 Next mode TE20 has fc = 13 GHz
= +
2 5 3 10 GHz operates only in dominant mode,
f c = 7810 MHz 2
m 2
= µ
23. (c) a
Hz (x, y, z, t) = 0.1 cos(25 x) cos(30.3 y) 2
(2 f )2
cos(12 × 109t – z) A/m =
a (3 × 108 )2
a = 0.08 m, b = 0.033 m
Axial component is H the propagating mode 2 2
1 2 × 10 × 109
is TEmn, m, n can be found by =
2.286 × 10 2 3 × 108
m
x = 25 x = j158 (m–1)
a
m 26. (c)
= 25
0.08
a = 2.286 cm
m=2
b = 1.016 cm
n
y = 30.3 y c
b fc TE =
10 2a
n
= 30.3 c
0.033 fcTE =
01 2b
n=1
c
The mode of propagation is TE21. fc TE =
20 a
24. Sol. 2 2
c 1 1
Given, fc TE10 mode is 6 GHz, fcTE = +
11 2 a b
c 3 × 10 10 As, a > 2b f cTE < f cTE < f cTE < f cTE
= = 6 × 109 10 20 01 11
2a 2× a
a = 2.5 cm 27. (b)
Given, fc for TM11 mode is 15 GHz. a = 2.29 cm
c 1 1 b = 1.02 cm
2
+ 2 = 15 × 109
2 a b Waveguide is operating in (TE10) dominant
mode:
3 × 1010 1 1
+ = 15 × 109
2 6.25 b 2 c 3 × 1010
• fc (TE10) = = = 6.55 GHz
2.5 2 a 2 × 2.29
b= 25% above cut-off frequency
5.25
Now fc for TE01 mode is, = 1.25 × 6.55 GHz
• Next higher order mode is TE20 (Q a > 2b) and for TE11 mode,
c 3 × 1010 c 1 2
1 2
fc (TE20) = = = 13.1 GHz f c 11 = +
a 2.29 2 w h
95% of fc (TE20) = 0.95 × 13.1
2
= 12.445 GHz c w
= 1+ ...(ii)
• Range of allowable operating frequency f is 2w h
8.19 GHz f 12.45 GHz f c 10 1
Given, = ...(iii)
f c 11 2
28. Sol.
Put, (i), (ii) in equation (iii),
2c c
fc (01) = 2 f c (10) = = c /2 w 1
2a a =
c w
2 2
c c 1+
= 2w h
2b a
a 2
a = 2b b= w
2 1+ =2
h
Operating frequency,
On solving above equation, we get,
f = 1.25fc (10)
fc (10) < 1.25fc(10) < [fc(01) = 2fc(10)] w
= 3 = 1.732
So, for the given frequency, the waveguide will h
work in TE10 mode. 30. (d)
So, =
0 By definition,
g 2
fc (10)
1 vp = =
f k
1 2 2
c/ f c/ f where, k( ) = o (given)
= = c
1 2 0.6
1 c
1.25 vp =
2
c 1 o
= g = 4 cm
(1.25) fc(10) (0.6)
c d d
By definition, v g = =
= 3 × 10–2 = 2a d dk
f c (10)
a = 1.5 cm dk 1 1
= ×2
d c2 2 2
a o
b = = 0.75 cm
2
2
o
29. Sol. or, vg = c 1
c m 2
n 2 Q v p v g = c2
fcmn = +
2 a b c 2 (3 × 108 )2
vp = =
For TE10 mode, vg 2 × 108
c = 4.5 × 108 m/sec.
f c 10 = ...(i)
2w
90 Electronics Engineering Electromagnetic Theory
ELECTRO NICS EN GINEERIN G Q.5 The beamwidth between first nulls of a uniform
linear array of N equally spaced (element
(GATE Previous Years Solved Papers)
spacing = d), equal excited antennas, is
Q.1 The electric field E and the magnetic field H of a determine by
short dipole antenna satisfy the condition (a) N alone and not by d
(a) the r component of E is equal to zero. (b) d alone and not by N
(b) both r and components of H are equal to (c) the ratio, (N/d)
zero. (d) the product, (Nd)
(c) the component of E dominates the r [EC-1992 : 2 Marks]
component in the far field region.
(d) the and components of H are of the same Q.6 For a half-wave dipole antenna, which of the
order of magnitude in the near field region. following statements are right?
[EC-1988 : 2 Marks] (a) The radiation intensity is maximum along
the normal to the dipole axis.
Q.2 Two isotropic antennas are separated by a
(b) The current distribution along its length is
distance of two wavelengths. If both the
uniform irrespective of the length.
antennas are fed with currents of equal phase
and magnitude, the number of lobes in the (c) The effective length equals its physical
radiation pattern in the horizontal plane are length.
(a) 2 (b) 4 (d) The input impedance is independent of the
(c) 6 (d) 8 location of the feed point.
Q.3 In a broad side array of 20 isotropic radiators, Q.7 An antenna, when radiating has a highly
equally spaced at distance of /2, the beam directional radiation pattern. When the antenna
width between first nulls is is receiving, its radiation pattern
(a) 51.3 degrees (b) 11.46 degrees (a) is more directive
(c) 22.9 degrees (d) 102.6 degrees (b) is less directive
[EC-1991 : 2 Marks] (c) is the same
(d) exhibits no directivity at all
Q.4 Two dissimilar antennas having their
maximum directivities equal, which of the [EC-1995 : 1 Mark]
following statements are right? Q.8 A transverse electromagnetic wave with circular
(a) must have their beam widths also equal. polarization is received by a dipole antenna.
(b) cannot have their beam widths equal Due to polarization mismatch, the power
because they are dissimilar antenna. transfer efficiency from the wave to the antenna
(c) may not necessarily have their maximum is reduced to about
power gains equal. (a) 50% (b) 35.3%
(d) must have their effective aperture areas (c) 25% (d) 0%
(capture areas) also equal. [EC-1996 : 2 Marks]
[EC-1992 : 2 Marks]
92 Electronics Engineering Electromagnetic Theory
Q.9 At 1 km long microwave link use two antennas Q.15 A transmitting antenna radiates 251 W
each having 30 dB gain. If the power transmitted isotropically. A receiving antenna, located
by one antenna is 1 W at 3 GHz, the power 100 m away from the transmitting antenna, has
received by the other antenna is approximately an effective aperture of 500 cm2. The total power
(a) 98.6 µW (b) 76.8 µW received by the antenna is
(c) 63.4 µW (d) 55.2 µW (a) 10 µW (b) 1 µW
[EC-1996 : 2 Marks] (c) 20 µW (d) 100 µW
Q.10 A parabolic dish antenna has conical beam 2° [EC-1999 : 2 Marks]
wide. The directivity of the antenna is Q.16 If the diameter of a /2 dipole antenna is
approximately
(a) 20 dB (b) 30 dB increased from to , then its
100 50
(c) 40 dB (d) 50 dB
[EC-1997 : 2 Marks] (a) bandwidth increases
(b) bandwidth decreases
Q.11 The vector H in the far field on an antenna (c) gain increases
satisfies (d) gain decreases
(a) H = 0 and ×H = 0 [EC-2000 : 1 Mark]
(b) H 0 and ×H 0 Q.17 For an 8 feet (2.4 m) parabolic dish antenna
(c) H = 0 and ×H 0 operating at 4 GHz, the minimum distance
required for far field measurement is closest to
(d) H 0 and ×H = 0
(a) 7.5 cm (b) 15 cm
[EC-1998 : 1 Mark]
(c) 15 m (d) 150 m
Q.12 The radiation resistance of a circular loop of [EC-2000 : 2 Marks]
one turn is 0.01 . The radiation resistance of
Q.18 A medium wave radio transmitter operating at
five turns of such a loop will be
a wavelength of 492 m has a tower antenna of
(a) 0.002 (b) 0.01
height 124 m. What is the radiation resistance
(c) 0.05 (d) 0.25
of the antenna?
[EC-1998 : 1 Mark]
(a) 25 (b) 36.5
Q.13 An antenna in free space receives 2 µW of power (c) 50 (d) 73
when the incident electric field is 20 mV/m rms. [EC-2001 : 2 Marks]
The effective aperture of the antenna is
Q.19 In a uniform linear array, four isotropic radiating
(a) 0.005 m2 (b) 0.05 m2
elements are spaced /4 apart. The progressive
(c) 1.885 m2 (d) 3.77 m2
phase shift between the elements required for
[EC-1998 : 1 Mark] forming the main beam at 60° off the end fire is
Q.14 The far field on an antenna varies with distance (a) – radians (b) – /2 radians
‘r’ as, (c) – /4 radians (d) – /8 radians
1 1 [EC-2001 : 2 Marks]
(a) (b) 2
r r
Q.20 The line of sight communication requires the
1 1
(c) (d) transmit and receive antennas to face each other.
r3 r
If the transmit antenna is vertically polarized,
[EC-1998 : 1 Mark] for best reception the receiver antenna should be
GATE Previous Years Solved Paper 93
(a) horizontally polarized Q.24 Two identical and parallel dipole antennas are
(b) vertically polarized kept apart by a distance of l/4 in the H-plane.
(c) at 45° with respect to horizontal polarized They are fed with equal currents but the right
(d) at 45° with respect to vertical polarized most antenna has a phase shift of +90°. The
radiation pattern is given as,
[EC-2002 : 1 Mark]
y
(a) Re ( P ) remains constant at any radial
Q.34 Match Column-A with Column-B: Q.37 Two lossless X-band horn antennas are
Column-A separated by a distance of 200 . The amplitude
1. Point electromagnetic source reflection coefficients at the terminals of the
2. Dish antenna transmitting and receiving antennas are 0.15
3. Yagi-Uda antenna and 0.18, respectively. The maximum
directivities of the transmitting and receiving
Column-B
antennas (over the isotropic antenna) are 18 dB
P. Highly directional
and 22 dB, respectively. Assuming that the input
Q. End fire
power in the lossless transmission line
R. Isotropic connected to the antenna is 2 W, and that the
Codes: antennas are perfectly aligned and polarization
P Q R matched, the power (in mW) delivered to the
(a) 1 2 3 load at the receiver is _______ .
(b) 2 3 1 [EC-2016 : 2 Marks]
(c) 2 1 3
Q.38 The electric field of a uniform plane wave
(d) 3 2 1
travelling along the negative z-direction is given
[EC-2014 : 1 Mark]
by the following equation:
Q.35 Two half-wave dipole antennas placed as i
Ew = ( aˆ x + jaˆ y ) E0 e jkz
shown in the figure are excited with
sinusoidally varying currents of frequency This wave is incident upon a receiving antenna
3 MHz and phase shift of /2 between them placed at the origin and whose radiated electric
(the element at the origin leads in phase). If the field towards the incident wave is given by the
maximum radiated E field at the point P in the following equation:
x-y plane occurs at an azimuthal angle of 60°, 1 jkr
Ea = ( aˆ x + 2 aˆ y ) EI e
the distance d (in meters) between the antenna r
is ________ . The polarization of the incident wave, the
z polarization of the antenna and losses due to
polarization mismatch are, respectively,
(a) linear, circular (clockwise), –5 dB
0 (b) circular (clockwise), linear, –5 dB
d y
(c) circular (clockwise), linear, –3 dB
60° OP >> d
(b) circular (anticlockwise), linear, –3 dB
x P
[EC-2016 : 2 Marks]
[EC-2015 : 2 Marks]
Q.39 The far zone power density radiated by a helical
Q.36 The directivity of an antenna array can be
antenna is approximated as,
increased by adding more antenna elements, as
1
a larger number of elements Wrad = Waverage aˆ r C 0 cos 4
r2
(a) improves the radiation efficiency
The radiated power density is symmetrical with
(b) increases the effective area of the antenna
respect to and exists only in the upper
(c) results in a better impedance matching
(d) allows more power to be transmitted by the hemisphere 0 ,0 2 , C 0 is a
antenna 2
[EC-2015 : 1 Mark] constant.
96 Electronics Engineering Electromagnetic Theory
The power radiated by the antenna (in Watts) Q.43 Radiation resistance of a small dipole current
and the maximum directivity of antenna, element of length l at a frequency of 3 GHz is
respectively, are 3 . If the length is changed by 1%, then the
(a) 15 C0, 10 dB (b) 1.256 C0, 10 dB percentage change in the radiation resistance,
(c) 1.256 C0, 12 dB (d) 1.5 C0, 12 dB rounded off to two decimal places, is ______ %.
[EC-2016 : 2 Marks] [EC-2019 : 1 Mark]
Q.40 A radar operating at 5 GHz uses a common Q.44 For an infinitesimally small dipole in free space,
antenna for transmission and reception. The the electric field E in the far field is proportional
antenna has a gain of 150 and a aligned for to (e–jkr/r) sin , where k = 2 / . A vertical
maximum directional radiation and reception infinitesimally small electric dipole ( I << ) is
to a target 1 km away having radar cross-section placed at a distance h(h > 0) above an infinite
of 3 m2. If it transmits 100 kW, then the received ideal conducting plane, as shown in the figure.
power (in µW) is _______ . The minimum value of h, for which one of the
[EC-2016 : 2 Marks] maxima in the far field radiation pattern occurs
at = 60°, is
z
Q.41 Consider a wireless communication link
between a transmitter and a receiver located in
free space, with finite and strictly positive Idl
Answers
EC Antennas
9. (c) 10. (c) 11. (c) 12. (d) 13. (c) 14. (a) 15. (d) 16. (b)
17. (d) 18. (b) 19. (c) 20. (b) 21. (b) 22. (d) 23. (b) 24. (c)
25. (b) 26. (a) 27. (b) 28. (c) 29. (d) 30. (c) 31. (a) 32. (55.5)
33. (47.7) 34. (b) 35. (50) 36. (b) 37. (3) 38. (c, d) 39. (b) 40. (Sol.)
41. (c) 42. (a) 43. (2.01) 44. (b) 45. (0.244)
Solutions
EC Antennas
= 78.46 7. (b)
NP1
with n = 2 for 2nd null points An antenna, when radiating, has a highly
8 directional radiation pattern. When the antenna
cos =
20NP2 is receiving, its radiation pattern is the same.
NP2 = 66.42
Antenna is reciprocal device, whose
Beam which between first nulls = 12.04° characteristics are the same when it is
transmitting or receiving.
4. (a, c)
4 4 8. (d)
Directivity = 2
Ae =
A 2
Polarization loss = cos
A = Beam solid angle
when is angle between received and
Ae = Capture area
transmission E fields of antennas,
Power gain depends on efficiency and losses,
so they may not be equal is right. 2
ET ER
Polarization loss =
5. (d) ET ER
6. (a) C 3 × 1010
= = = 10 cm
f 3 × 109
• Dipole antenna has radiation depending
Power density Pd at 1 km
cos cos Pt Gt 1 × 1000 1
as 2 and maximum at 90° to = 2
= 3 2
=
4 R 4 (10 ) 4000
sin
array axis.
GATE Previous Years Solved Paper 99
Gr 2
1 15. (d)
Pr = ( Ae )r Pd = Intensity of EM wave at 100 m away
4 4000
251
1000(0.1)2 1 = 2
W/m 2
= × = 63.3 µW 4 × 100
4 4000
Effective aperture = 500 cm2 = 500 × 10–4 m2
10. (c) 251 4
Power = × 500 × 10 W
4 × 100 × 100
4
Directivity = (Steradian) = 100 µW
A
41, 253° 1
10, 000 Rl
= A
2.2
Losses reduce when area increases and gain
D = 40 dB
increases. Bandwidth is unaffected as the gain
11. (c) increase is due to loss aspects but not beam angle
For field free space conditions have JC = 0, aspects.
Unlike an amplifier we cannot relate gain ×
× H = JC + JD
bandwidth relationship in antennas.
× H = JC
17. (d)
H =0
To measure the antennas performance in any
So, ×H 0 and H =0 aspect the near field or 1/r2 and 1/r3 have to be
neglected. The radiation field 1/r term should
12. (d)
be strong enough ignoring 1/r2 and 1/r3.
2
dl This distance is called as Fraunhofer zone
R r = 80 (for short loops)
where measurements are carried,
dl 2 2D2
= 20 (for longer loops) r>
19. (c) Y
Dipole pattern,
0°
0°
26. (a)
0°
A mast antenna is a tower antenna or monopole
vertically erected on the ground for low
Resultant pattern can be obtained by
frequency ground wave communication,
multiplication of patterns.
l = 50 m, = 500 m
28. (c)
l= electrically short monopole
10 E-plane mean -plane or vertical plane
2 E sin in Hertzian dipole
2 dl
R r = 20 ×2
Emax when = 90°
This 2 in the multiplication is due to image in Emin when = 0°
conducting earth, E has half power of maximum when = 45°
2 and 135° HPBW in side = 135° – 45° = 90°
2
Rr = 4
5 29. (d)
27. (b) 4 4
Gain = 2
Ae = 2
R2
/2 dipole
Along with illumination or efficiency,
/2
2
2 (2 R)2 D
Gain = 2
=7
Earth
2
A horizontally placed dipole has an image in 1 × 20 × 109
= 0.7 2
the earth and interference with the image 3 × 108
formed gives the final pattern of radiation, = 30705.4359
G (dB) = 10 log10 G
D1
/2
= 10 log10 (30705.4359)
= 45 dB
30. (c)
Earth
Power density of any point source decreases
/2
D2 with distance i.e. the density decreases and area
of crossover increases with the product being
constant.
102 Electronics Engineering Electromagnetic Theory
31. (a) /2
26.5
= ×2 sin 3 d
F( ) = cos4 , 0 2
=0
2
We know that directivity D is, 26.5 2
= ×2 = 55.5 W
4 Umax 2 3
D= ...(i)
Wrad 33. Sol.
F( ) is nothing but radiation intensity u( , ) and Given electric field, E at a distance of
Wrad is radiated power, 1 km = 12 mV/m
2 /2
Wrad = cos 4 sin d d ...(ii) 1
Also we know that E , where r is the
0 0 r
above equation is written from the formula, distance where electric field is to be measured.
Wrad = u( , ) d So, electric field, E at a distance of 2 km
12 mV/m
= = 6 mV/m
where d is solid angle and d = sin d d . 2
So from equation (ii), Also, power density due to the antenna is given
2 /2
as,
Wrad = cos 4 sin d d 1 E2 1 6 × 6 × 10 6
0 0 Pavg = = ×
2 2 120
/2
= 47.7 nW/m2
Wrad = 2 cos 4 sin d
0 34. (b)
/2 • Point electromagnetic source radiates in all
cos 5 2
Wrad = 2 = direction.
5 5
0
• Dish antenna radiates any electromagnetic
4 umax energy in any particular direction with
So, D= = 10 umax = 10
2 narrow beam width and high directivity.
5
• Yagi-uda antenna is high gain antenna
In dB directivity = 10 log10 D = 10 dB used for TV reception. Its radiation is along
the axis of the antenna.
32. Sol.
100
E = Re sin e j r e j t aˆ V/m
r
0.265 j r
H = Re sin e ej t
aˆ V/m
r 35. Sol.
Poynting vector, Both dipole antenna have isotropic pattern in
1 2 2 26.5 view of H-plane view.
P = 2 Re[E × H ] = 2 sin aˆr W/m
2r z
The average power crossing the given
hemispherical shell is,
/2 2 0 y
2 d
Power = P r sin d d aˆr
60° OP >> d
=0 =0
x P
GATE Previous Years Solved Paper 103
81 × 3 × 10 5 8 44. (b)
= = 1.224 × 10
(4 )3 × 1012
z
= 0.012 µW
42. (a)
Idl
XY plane means Z = 0 with Z = r cos (spherical
coordinates) = 90°.
With null points along the axis of the dipole it Total E = (Esingle element ) (A.F.)
is = 45° and 225°.
y
sin N sin 2
2 2
z (A.F.) = =
null
sin sin
2 2
–
2 sin cos
2 2
= 45° = = 2 cos
x 2
/2 sin
Dipole 2
+
2 cos
A.F 2
A.FN = = = cos
null
A.Fmax 2 2
where, 2
d cos = (2 h ) cos
43. Sol.
Radiation resistance of a small dipole current 2
A.FN = 60° = cos h cos 60°
element of length ‘l’ is
l 2 h
R rad = 80 2 R l2 = cos
2
cos is maximum, whenever = n , n = 0, 1, 2....
R2 l2
= h
R1 l1 =n h = nl
If length is changed by 1% then percentage For n = 1, hmin =
change in the radiation resistance,
GATE Previous Years Solved Paper 105
E2
4 r2 ×
2
=
Prad
GATE-2023
Electronics Engineering
Digital Electronics
Chapterwise & Topicwise
Contents
S.No. Topic Page No.
(b) copy the original byte to the more significant (d) –25, –9 and –57 respectively
byte of the word and fill the less significant [EC-2004 : 1 Mark]
byte with zeros. Q.9 Decimal 43 in Hexadecimal and BCD number
(c) copy the original byte to the less significant system is respectively
byte of the word and make each bit of the (a) B2, 0100 0011 (b) 2B, 0100 0011
more significant byte equal to the most
(c) 2B, 0011 0100 (d) B2, 0100, 0100
significant bit of the original byte.
[EC-2005 : 1 Mark]
(d) copy the original byte to the less significant
bytes well as the more significant byte of Q.10 A new Binary Coded Pentary (BCP) number
the word. system is proposed in which every digit of a
[EC-1997 : 1 Mark] base-5 number is represented by its
corresponding 3-bit binary code. For example,
Q.4 An equivalent 2’s complement representation
the base-5 number 24 will be represented by its
of the 2’s complement number 1101 is
2 Electronics Engineering Digital Electronics
BCP code 010100. In this numbering system, the Q.14 P, Q and R are the decimal integers
BCP code 100010011001 corresponding to the corresponding to the 4-bit binary number 1100
following number in base-5 system. considered in signed magnitude, 1’s
(a) 423 (b) 1324 complement, and 2’s complement
(c) 2201 (d) 4231 representations, respectively. The 6-bit 2’s
[EC-2006 : 2 Marks] complement representation of (P + Q + R) is
(a) 111101 (b) 110101
Q.11 X = 01110 and Y = 11001 are two 5-bit binary
(c) 110010 (d) 111001
numbers represented in two’s complement
[EC-2020 : 2 Marks]
format. The sum of X and Y represented in 2’s
complement format using 6-bits is Q.15 If (1235)x = (3033)y, where ‘x’ and ‘y’ indicate
(a) 100111 (b) 001000 the bases of the corresponding numbers, then
(c) 000111 (d) 101001 (a) x = 9 and y = 7 (b) x = 8 and y = 6
[EC-2007 : 1 Mark] (c) x = 6 and y = 4 (d) x = 7 and y = 5
Answers
EC Number Systems
9. (b) 10. (d) 11. (c) 12. (b) 13. (4) 14. (b) 15. (b) 16. (b, c)
Solutions
EC Number Systems
ELECTRO NICS EN GINEERIN G Q.5 The minimized form of the logical expression
AB Z = R + S + PQ + PQR + PQS
CD 00 01 11 10
Then,
00 1 1 0 1
(a) W = Z , X = Z (b) W = Z, X = Y
01 0 0 0 1
(c) W = Y (d) W = Y = Z
11 1 0 0 0 [EC-2003 : 2 Marks]
10 1 0 0 1
Q.8 The Boolean expression AC + BC is equivalent
to
(a) 4 (b) 5
(c) 6 (d) 8 (a) AC + BC + AC
[EC-1998 : 1 Mark] (b) BC + AC + BC + ACB
(c) AC + BC + BC + ABC
Q.4 The logical expression y = A + AB is
(d) ABC + ABC + ABC + ABC
equivalent to
[EC-2004 : 2 Marks]
(a) y = AB (b) y = AB
Q.9 The Boolean expression for the truth table
(c) y = A + B (d) y = A + B
shown is
[EC-1998 : 1 Mark]
6 Electronics Engineering Digital Electronics
(c) ( X + Y + Z ) ( X + Y + Z) ( X + Y + Z) (a) A B + A BC + A BC
(X + Y + Z) (X + Y + Z) (b) AC + A B + A BC
(c) AC + A B + A BC
(d) ( X + Y + Z ) ( X + Y + Z ) ( X + Y + Z )
(d) A BC + AC + A BC
(X + Y + Z) (X + Y + Z)
[EC-2017 : 2 Marks]
[EC-2015 : 2 Marks]
Q.21 A function F(A, B, C) defined by three Boolean
Q.19 Following is the K-map of a Boolean function of variables A, B and C when expressed as sum of
5 variables P, Q, R, S and X. The minimum sum products is given by
of product (SOP) expression for the function is
F= A B C+A B C+A B C
PQ
RS 00 01 11 10 where, AB and C are the complements of the
00 0 0 0 0 respective variables. The product of sums (POS)
form of the function F is
01 1 0 0 1
(a) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
11 1 0 0 1
(b) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
10 1 0 0 1 (c) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
X=0
( A + B + C) (A + B + C)
PQ (d) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
RS 00 01 11 10
(A + B + C) (A + B + C)
00 0 1 1 0
[EC-2018 : 1 Mark]
01 0 0 0 0
ELECTRICAL EN GINEERIN G
11 0 0 0 0
(GATE Previous Years Solved Papers)
10 0 1 1 0
Q.20 Which one of the following gives the simplified Q.2 The minimal product of sums function
sum of products expression for the Boolean described by the K-map given in figure, is
AB
function, F = m0 + m2 + m3 + m5, where m0, m2, m3 00 01 11 10
C
and m5 are minterms corresponding to the
0 1 1 0 0
inputs A, B and C with A as the MSB and C as
the LSB? 1 0 0 0 0
8 Electronics Engineering Digital Electronics
(a) A C (b) A + C
(c) X
(c) A + C (d) AC
F
[EE-2000 : 2 Marks] Y
Z
Q.3 The Boolean expression:
X Y Z + X Y Z + X Y Z + X Y Z + XYZ (d) X
F
can be simplified to Y
Z
(a) XZ + XZ + YZ (b) XY + YZ + YZ
F = ABC + A BC + A BC + A BC + A BC
(a) BD + BCD (b) BD + AB
The equivalent product of sums expression is
(c) BD + ABC (d) BD + ABC
(a) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
[EE-2017 : 2 Marks]
(b) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
Q.16 Digital input signals A, B, C with A as the MSB
(c) F = ( A + B + C ) ( A + B + C ) ( A + B + C )
and C as the LSB are used to realize the Boolean
(d) F = ( A + B + C ) ( A + B + C ) ( A + B + C ) function F = m0 + m2 + m3 + m5 + m7, where mi
[EE-2015 : 1 Mark] denotes the Ith minterm. In addition, F has a
don’t care for m1. The simplified expression for
Q.12 The output expression for the Karnaugh map
F is given by
shown below is
BC (a) AC + BC + AC (b) A + C
A 00 01 11 10
(c) C + A (d) AC + BC + AC
0 1 0 0 1
[EE-2018 : 2 Marks]
1 1 1 1 1
Q.17 The output expression for the Karnaugh map
shown below is
(a) A + B (b) A + C
PQ
(c) A + C (d) A + C RS 00 01 11 10
[EE-2016 : 1 Mark] 00 0 1 1 0
(a) BC + AC (b) AB + AC + B
(c) AB + AC (d) AB + BC
[EE-2017 : 1 Mark]
10 Electronics Engineering Digital Electronics
Answers
EC Boolean Algebra
9. (a) 10. (b) 11. (d) 12. (d) 13. (a) 14. (a) 15. (d) 16. (d)
17. (a) 18. (b) 19. (b) 20. (b) 21. (c)
Solutions
EC Boolean Algebra
1. (b) 5. (a)
n Y = A BC + A BC + A BC + A BC
Boolean functions possible are 2 2 .
= AC ( B + B) + A BC + A BC
2. (c)
The condition for overflow to occur is = A (C + BC ) + A BC
x y z + x y z. = A (C + C ) (C + B) + A BC
= AC + A B + A BC
3. (a)
= AC + B ( A + AC )
AB
00 01 11 10 = AC + B ( A + A) ( A + C )
CD
00 1 1 1 = AC + A B + BC
01 1 6. (d)
n 4
11 1 22 = 2 2 = 2 16 = 65536
10 1 1 7. (a)
RS
Number of essential prime implicants = 4. 1. W = PQ 00 01 10 11
00 1 1 1
4. (d)
01 1 1 1 1
y = A + AB
11 1 1 1
= ( A + A) ( A + B) 10 1 1 1
= A+B
W = R + PQ + RS
GATE Previous Years Solved Paper 11
9. (a)
2. X= RS
PQ 00 01 11 10
f = A BC + A BC
00 1
= B ( AC + AC )
01 = B( A + C) ( A + C)
11 1
10. (b)
10 1 y = AB + CD = A B + C D
A
We can see that, X = B
AB + CD
RS
3. Y= 00 01 11 10
PQ
C
00 1 D
01 1 1 1 1 11. (d)
11 1 1 1 K-map corresponding to given Boolean
expression,
10 1
CD
AB 00 01 11 10
RS 00 1
4. Z= 00 01 11 10
PQ
00 1 1 1 01 1
11 1
01 1 1 1 1
10 1
11 1 1 1
AC + BC Z =1
Writing the SOP form of the above expression Z=0
and filling the K-map, we get, 13. (a)
BC
00 01 11 10 f (X, Y, Z) = (2, 3, 4, 5)
A
YZ YZ YZ YZ
0 1
X 1 1
1 1 1 1
X 1 1
Now, comparing it which the expression given
in the question, we find option (d) satisfies the f (X, Y, Z) = X Y + X Y
given condition. So, prime implicants are X Y and X Y .
12 Electronics Engineering Digital Electronics
Let, F = (X + Y ) (X + Y ) + (X Y + X ) PQ
RS
F = X + X Y + XY + ( X Y X )
= X + (X + Y ) X 1 1
= X + XY
1 1
=X
15. (d)
X=0
f ( w , x , y , z ) = wy + xy + w xyz + w x y + xz + x y z QSX
PQ
f (wxyz)
RS
yz yz yz yz
1 1
wx 1 1 1 1
wx 1 1 1 1
wx 1 1 1
1 1
wx 1 1 1 X=1
QSX
y , xz , x z 20. (b)
Answers
EE Boolean Algebra
9. (a) 10. (c) 11. (a) 12. (b) 13. (d) 14. (a) 15. (d) 16. (b)
17. (b)
Solutions
EE Boolean Algebra
1. (b) 5. (b)
Given, XY
f = ( x y ) + (x y ) = (x y ) (x y ) YZ
X 00 01 11 10
= ( x + y ) ( x + y ) = xy + x y
0 1 1 1 0
Option (b):
( x + y ) (x + y ) = ( x + y ) + (x + y ) 1 0 0 1 0
= xy + x y = f YZ
2. (a) F = XY +Y Z
AB
C 00 01 11 10 6. (d)
A From the figure it is clear that, two NAND gates
0 1 1 0 0
generate the X and Y and now two AND gates
1 0 0 0 0
with inputs X and Y and inputs Y and Z is
C used to generate two terms of SOP form and now
OR gate is used to sum them and generate the F.
3. (b)
By K-map: 7. (a)
XY f(X, Y, Z) = (2, 3, 4, 5)
Z 00 01 11 10
YZ
X 00 01 11 10
0 1 1
0 1 1 XY
1 1 1 1
1 1 1
= A BCD + AD + BC D 8. (d)
Binary coded decimal counter counts from 0 to 9.
= ( AD + BC D)
So, 1100 is an invalid state i.e. 12.
14 Electronics Engineering Digital Electronics
9. (a) = ( a + b + c + d ) (b + c )
The 4 variable Boolean function is given in
= a b c d b c
canonical sum of products form as, F=0
f (A, B, C, D) = (0, 1, 3, 7, 11)
As the options are given in the simplified 14. (a)
product of sums form, we first convert the given BC BC BC BC
function in canonical product of sums form, as
A 1
under: 0 1 3 2
f = ( B + C ) ( A + C ) ( A + B) (C + D) ABC + BD
A 1 1
So, POS form can be formed using ‘0’ from the 4 5 7 6
K-map. f = A +C
POS = ( A + B + C ) ( A + B + C ) ( A + B + C )
17. (b)
12. (b) PQ
RS 00 01 11 10
BC
A 00 01 11 10 00 0 1 1 0
0 1 0 0 1 01 1 1 1 1
1 1 1 1 1 11 1 1 1 1
10 0 0 0 0
F = A +C
ELECTRO NICS EN GINEERIN G Q.5 For the logic circuit shown in figure, the output
is equal to
(GATE Previous Years Solved Papers)
X
B Y
F
[EC-1997 : 1 Mark]
Y
Q.11 The Boolean function A + BC is a reduced form
of C
Q.12 The minimum number of 2-input NAND gates Q.16 In the figure, the LED
required to implement the Boolean function
VCC = 5 V
Z = ABC , assuming that A, B and C are
available, is 1k 1k 1k LED
(a) two (b) three
(c) five (d) six 1k
[EC-1998 : 1 Mark]
S1 S2
Q.13 For the identity AB + AC + BC = AB + AC , the
dual form is
(a) ( A + B) ( A + C ) ( B + C ) = ( A + B) ( A + C )
(a) emits light when both S1 and S2 are closed.
(b) ( A + B) ( A + C ) ( B + C ) = ( A + B) ( A + C ) (b) emits light when both S1 and S2 are open.
(c) emits light when only of S1 and S2 is closed.
(c) ( A + B) ( A + C ) ( B + C ) = ( A + B) ( A + C )
(d) does not emit light, irrespective of the switch
(d) A B + AC + BC = A B + AC positions.
[EC-1998 : 1 Mark] [EC-2001 : 2 Marks]
Q.14 For the logic circuit shown in the figure, the Q.17 If the input to the digital circuit (in the figure)
required input condition (A, B, C) to make the consisting of a cascade of 20 XOR-gates is X,
output (X) = 1 is then the output Y is equal to
GATE Previous Years Solved Paper 17
1 R
(b)
0 (a) M1 = (P OR Q) XOR R
t0 t1 t2 t3
(b) M2 = (P AND Q) XOR R
1 (c) M1 = (P NOR Q) XOR R
(c)
0 (d) M1 = (P XOR Q) XOR R
t0 t1 t2 t3
[EC-2008 : 2 Marks]
1
(d) Q.22 Match the logic gates in Column-A with their
0
t0 t1 t2 t3 equivalent in Column-B:
Column-A Column-B
[EC-2002 : 2 Marks]
P. 1.
Q.19 A Boolean function ‘f ’ of two variables x and y
is defined as follows:
Q. 2.
f(0, 0) = f(0, 1) = f(1, 1) = 1; f(1, 0) = 0
Assuming complements of x and y are not
R. 3.
available, a minimum cost solution of realizing
‘f ’ using only 2-input NOR gates and 2-input
S. 4.
OR gates (each having unit cost) would have a
total cost of (a) P-2, Q-4, R-1, S-3
(a) 1 unit (b) 4 unit (b) P-4, Q-2, R-1, S-3
(c) 3 unit (d) 2 unit (c) P-2, Q-4, R-3, S-1
[EC-2004 : 2 Marks] (d) P-4, Q-2, R-3, S-1 [EC-2010 : 1 Mark]
18 Electronics Engineering Digital Electronics
F Z
XNOR
C
(a) F = X Y Z + X Y Z
(a) A = 1, B = 1, C = 0
(b) A = 1, B = 0, C = 0 (b) F = X Y Z + X Y Z
(c) A = 0, B = 1, C = 0 (c) F = X Y Z + X Y Z
(d) A = 0, B = 0, C = 1
(d) F = X Y Z + X Y Z
[EC-2010 : 1 Mark]
[EC-2014 : 2 Marks]
Q.24 The output Y in the circuit below is always ‘1’
when Q.27 In the circuit shown in the figure, if C = 0, the
expression for Y is
P
C
A
Q
Y B
Y
R
A
(a) two or more of the inputs P, Q, R are ‘0’. B
A [EE-1996 : 1 Mark]
Q.3 For the circuit shown in figure the Boolean Q.6 The output Y of the logic circuit given below is
expression for the output Y in terms of inputs P,
Y
Q, R and S.
P (a) 1 (b) 0
(c) x (d) x
Q [EE-2011 : 1 Mark]
Y Q.7 A bulb in a staircase has two switches, one
R
switch being at the ground floor and the other
one at the first floor. The bulb can be turned ON
S
and also can be turned OFF by one of the
switches irrespective of the state of the other
(a) P + Q + R + S (b) P + Q + R + S switch. The logic of switching of the bulb
resembles
(c) ( P + Q) + ( R + S ) (d) (P + Q) + (R + S) (a) and AND gate (b) an OR gate
XOR Y
1 1 1
C
XOR
D
A
(a) S is always either zero or odd.
(a)
(b) S is always either zero or even.
B
(c) S = 1 only if the sum of A, B, C and D is C
even.
(d) S = 1 only if the sum of A, B, C and D is odd. A
[EE-2007 : 1 Mark]
(b)
Q.5 The complete set of only those logic gates B
designated as universal gates is C
(a) NOT, OR and AND gates
(b) XNOR, NOR and AND gates A
(c) NOR and NAND gates
(d) XOR, NOR and NAND gates (c) C
[EE-2009 : 1 Mark]
B
GATE Previous Years Solved Paper 21
(a) Y = ABCD
A
C (b) Y = (A + B) (C + D)
(d) (c) Y = A + B + C + D
(d) Y = AB + CD
B
[EE-2018 : 1 Mark]
[EE-2014 : 2 Marks] Q.11 In the circuit shown below, X and Y are digital
inputs, and Z is a digital output. The equivalent
Q.9 For a 3 input logic circuit shown below, the
circuit is
output Z can be expressed as
P X
Y
Q Z
Z
(a) Q + R (b) PQ + R
(c) Q + R (d) P + Q + R
(a) XNOR gate (b) NOR gate
[EE-2017 : 1 Mark] (c) NAND gate (d) XOR gate
Q.10 In the logic circuit shown in the figure, Y is [EE-2019 : 2 Marks]
given by
A
B
Y
C
D
Answers
EC Logic G ates
9. (a) 10. (c) 11. (b) 12. (c) 13. (a) 14. (d) 15. ( ) 16. (d)
17. (b) 18. (b) 19. (d) 20. (a) 21. (d) 22. (d) 23. (d) 24. (b)
25. (c) 26. (a) 27. (a) 28. (b) 29. (40) 30. (a) 31. (c) 32. (c)
Solutions
EC Logic G ates
1. (b) 7. Sol.
Output of 1st EX-OR gate, 1
F1 = X X = 0 fclk =
2 Nt pdFF
Output of 2nd EX-OR gate,
F2 = X 0 = X 1 1
tpdFF = =
Output of 3rd EX-OR gate, 2 Ntclk 2 × 5 × 106
F = X X=0 = 100 nsec
2. (b) 8. (b)
W XY W Y = (A B) ( A B)
F = XYZ + XYW
= (X + Y) (Z + W) Y= A B A B
X XY
Y Y = (A A) ( B B)
XY Z
Y=0 0=1
Z
9. (a)
3. (b, d)
NAND and NOR gates can be used to realize F = A + A B + A BC
all possible combinational logic functions. = A (1 + B + BC ) = A
4. (b, c) So to implement A, zero NAND gates are
required.
A B + AB and ( A + B) ( A + B)
10. (c)
5. (b) F=A 0
A = A 0 + A 0 = A 1+0
F= A
A AB
11. (b)
AB + BC
B Y (A + B) (A + C) = A A + A C + A B + BC
= A + AC + AB + BC
C BC = A (1 + C + B) + BC
= A + BC
12. (c)
Y = A + AB + BC + C
A
Y = A + ( A + B) + ( B + C ) + C AC AC
C
Y = A+ B +C AC B ABC
6. (b)
B
B
NOR gate F = A + B = AB
X x y f y
x 0 1
Y 0 0 1
0 1 1 0 1 1
C D =x+y
1 0 0
1 1
Y = X+D 1 1 1
Y = Z + B + ZC 2 units.
P = AB 0 d 0 0
Y = P B+ B = B+ P
0 0 d 1
= B + AB = B + A + B = 1
Y=0 1 0 0 1
16. (d)
For LED to be ON, output of NAND gate = 0 21. (d)
No condition of S1 and S2 gives output of NAND M1 = [ PQ ( P + Q] R
gate zero. So LED will never glow.
= [( P + Q) ( P + Q] R
17. (b)
= (P Q) R
Output of 1st XOR gate = X
22. (d)
Output of 2nd XOR gate = X X
NOR gate is equivalent to INVERT – AND gate.
= (X ) X + X X = X + X = 1 NOR gate is equivalent to INVERT – OR gate.
Output of 20 XOR gates is 1.
24 Electronics Engineering Digital Electronics
X 26. (a)
R: Y F F = XY + XY
XOR
X X
3: F F = XY + XY Y
Y
A AND
F = XY + XY F
X
S: Y F F = XY + X Y
B
Z
X
1: Y F F = XY + XY XNOR
A=X Y
F = XY + X Y
B=A Z = A Z + AZ
23. (d) = Z (X Y ) + (X Y) Z
A X F = AB
B
= (X Y )[Z ( X Y ) + Z (X Y )]
Y
F = Z [( X Y ) (X Y ) + A (X Y ) (X Y )]
As we know,
C
A A=A
If, A = 0, B = 0 then
A A =0
X = AB+ AB = 0
= Z [(X Y) + 0]
Y = AB + A B = 1
= X YZ + X Y Z
F will be ‘1’ if even number of inputs to XNOR
gate is ‘1’, hence option (d) is the correct answer. 27. (a)
24. (b)
1
P PQ
C
PQ RQ PQ RQ A
PQ RQ PR 2
B
Q Y
RQ 3 6 Y
R PR A 5
4
B
Y = PQ + PR + RQ
Output of gate 1 : C
25. (c)
Output of gate 2 : ( A + B)
Truth table of XOR gate:
Output of gate 3 : (A + B + C)
A B Y
0 0 0 Output of gate 4 : AB
0 1 1 Output of gate 5 : ( A + B + C ) + AB
1 0 1
1 1 0 Output of gate 6 is output Y i.e.,
= ( A BC ) ( BC )
M ( M ( a , b , c ), M( a, b , c ) c ) =
( ab bc ca ) ( ab + bc + ca ) + ( ab + bc + ca ) (c ) + ( ab bc ca ) c = ABC BC + ABC BC
F = ab c + b c a + c a b + abc = ( A + B + C ) BC + ABC ( B + C )
F=A B C = A BC + BC + ABC
A
t=0
B x
f
y
B
20 ns
Y 34. (a, c)
40 ns
F(A, B) = A + B
C As ‘0’ and ‘1’ are available,
Z
20 ns 60 ns F(0, B) = A + B = 0 + B
= B (NOT)
Z is ‘1’ for 40 n-sec.
F( A + B) = A + B = A + B
30. (a)
F( A + B ) = A + B (OR)
A with the combination of OR and NOT, NOR gate
A
G1 can be implemented. Since NOR gate is
B
B
G2 Y universal logic gate, so all the functions can be
C CD implemented. So, correct option is (a, c).
D
26 Electronics Engineering Digital Electronics
Answers
EE Logic G ates
Solutions
EE Logic G ates
1. (a) 6. (a)
Y = (A B) C = A B+C x x y
= A B + C = AB + A B + C 1 0 1
2. (d) 0 1 1
A B Y
B
Y = x x+x x =1
0 0 1 A 0 1
0 1 X 0 1 1 7. (c)
1 0 X 1 1 Truth table XOR gate is,
1 1 X A B Y
0 0 0
Y = AB = A+ B NOR GATE 0 1 1
1 0 1
Y = AB + A B EX-NOR GATE
1 1 0
3. (b) So, from the XOR gate truth table it is clear that
the bulb can be turned ON and also can be
Y = (P Q) ( R S )
turned OFF by any one of the switches
Q ( A B ) = (A + B) irrespective of the state of the other switch.
Y = P Q+R S 8. (c)
AB
C 00 01 11 10
4. (b)
0 1 1
Y = A B C D from the given diagram. We
know that sum of any number of bits is XOR of
1 1 1
all bits.
So, S=A B C D Y
F = AC + BC
S=Y Y
So, option (c) is correct.
S = either zero even because LSB is zero (always)
9. (c)
5. (c)
P
NOR and NAND are designated as universal
logic gates because using any one of them we Q Z
can implement all the logic gates.
R
GATE Previous Years Solved Paper 27
11. (d)
Z = PQ Q Q R = P Q + Q + Q R
The Boolean expression for the output of the
= PQ + Q + QR = Q ( P + 1) + QR digital circuit is shown below.
= Q + QR X
= (Q + Q) (Q + R) = Q + R Y
10. (d) Z = XY + XY
A AB
B
Y
The above expression is a XOR gate.
C
D CD
AB
Y = AB + CD
CD
4 Combinational Circuits
C I0
I1
4×1
I2 MUX F
C I3
S1 S 2
A B MBS
(a) F = A C (b) F = A C Output
(c) X = AB + BC + AC Consider :
(c) g = P1 + P2 , e = b + c P Q
(d) g = P1 + P2, e = b + c (a) F = AND (P, Q) (b) F = OR (P, Q)
[EC-2009 : 2 Marks] (c) F = XNOR (P, Q) (d) F = XOR (P, Q)
Q.13 What are the minimum numbers of NOT gates [EC-2011 : 1 Mark]
and 2-input OR gates required to design the Q.17 The output Y of a 2-bit comparator is logic 1
logic of the driver for this 7-segment display? whenever the 2-bit input A is greater than the
(a) 3 NOT and 4 OR (b) 2 NOT and 4 OR 2-bit input B. The number of combination for
(c) 1 NOT and 3 OR (d) 2 NOT and 3 OR which the output is logic 1, is
[EC-2009 : 2 Marks] (a) 4 (b) 6
(c) 8 (d) 10
Q.14 What are the minimum number of 2-to-1 [EC-2012 : 1 Mark]
multiplexers required to generate a 2-input AND
gate and a 2-input EX-OR gate? Q.18 In a half-subtractor circuit with X and Y as
inputs, the Borrow (M) and Difference (N = X – Y)
(a) 1 and 2 (b) 1 and 3
are given by
(c) 1 and 1 (d) 2 and 2
(a) M = X Y, N = XY
[EC-2009 : 2 Marks]
(b) M = XY, N = X Y
Q.15 The Boolean function realized by the logic (c) M = X Y , N = X Y
circuit shown is
(d) M = X Y , N = X Y
C I0 [EC-2014 : 1 Mark]
D
I1
Q.19 Consider the multiplexer based logic circuit
4×1
F(A, B, C, D) shown in the figure.
I2 MUX
W 0
I3
S1 S0 MUX 0
1 MUX F
A B
1
S1
(a) F = m(0, 1, 3, 5, 9, 10, 14)
(b) F = m(2, 3, 5, 7, 8, 12, 13) S2
(c) F = m(1, 2, 4, 5, 11, 14, 15) Which one of the following Boolean functions
(d) F = m(2, 3, 5, 7, 8, 9, 12) is realized by the circuit?
[EC-2010 : 2 Marks] (a) F = W S1 S2
(b) F = WS1 + WS2 + S1S2
Q.16 The logic function implemented by the circuit
below is (ground implies a logic ‘0’) (c) F = W + S1 + S2
(d) F = W S1 S2 [EC-2014 : 1 Mark]
GATE Previous Years Solved Paper 31
(a) Y I0 S
Y
2:1 S
D
MUX X I0
I1 2:1
D
S MUX
X I1
S
Y I0
[EC-2014 : 2 Marks]
2:1
B
MUX Q.21 In the circuit shown, W and Y are MSBs of the
I1 control inputs. The output MSBs is given by
4 : 1 MUX 4 : 1 MUX
I0 I0
(b) X I0 I1 I1
2:1 V CC Q Q F
D I2 I2
MUX
I1 I3 I3
S
Y W X Y Z
S
(a) F = W X + W X + Y Z
X I0
2:1
(b) F = W X + W X + Y Z
B
MUX
(c) F = W X Y + W X Y
I1
(d) F = ( W + X ) Y Z [EC-2014 : 2 Marks]
I1 D I1
S 0 I2
X D I3
S 0 I4 Y
Y I0 0 I5
2:1 1 I6
D
MUX 0 I7
S2 S1 S0
I1
A B C
32 Electronics Engineering Digital Electronics
(b) Y = A BC + A B D O P0 IP0
X2 OP1 IP1 Y2
(c) Y = A BC + AC D
OP2 IP2
(d) Y = A B D + A BC X1
3:8 OP3 IP3 8:3
Y1
Decoder OP4 IP4 Decoder
[EC-2014 : 2 Marks] OP5 IP5
X0 OP6 IP6 Y0
Q.23 A 16-bit ripple carry adder is realized using 16
OP7 IP7
identical full adders (FA) as shown in the figure.
The carry-propagation delay of each FA is 12 ns (a) Binary to Gray code converter
and the sum-propagation delay of each FA is
(b) Binary to XS3 converter
15 ns. The worst case delay (in ns) of this 16-bit
(c) Gray to Binary converter
adder will be _______ .
(d) XS3 to Binary converter
A0 B0 A 1 B1 A14 B14 A 15 B15
[EC-2016 : 2 Marks]
C0 C1 C14 C15
FA0 FA1 FA14 FA 15 Q.26 A 4 : 1 multiplexer is to be used for generating
the output carry of a full adder. A and B are the
S0 S1 S14 S15 bits to be added while Cin is the input carry and
[EC-2014 : 2 Marks] Cout is the output carry. A and B are to be used
as the select bits with A being the more
Q.24 A 1-to-8 demultiplexer with data input Din,
significant select bit.
address inputs S0, S1, S2 (with S0 as the LSB)
I0
and Y0 to Y7 as the eight demultiplexed output,
I1
is to be designed using two 2-to-4 decoders (with 4:1
I2 Cout
MUX
enable input E and address inputs A0 and A1)
I3
as shown in the figure Din, S0, S1 and S2 are to be
S1 S0
connected to P, Q, R and S, but not necessarily
in this order. The respective input connections
A B
to P, Q, R and S terminals should be
Which one of the following statements correctly
P
1 Y0 Y0
describes the choice of signals to be connected
1E
Q to the inputs I0, I1, I2 and I3 so that the output is
2-to-4 1 Y
1 Y1
Decoder Cout?
R 1 A0 1 Y 2 Y2
(a) I0 = 0, I1 = Cin, I2 = Cin and I3 = 1
S 1 A1 1 Y3 Y3
(b) I0 = 1, I1 = Cin, I2 = Cin and I3 = 1
(c) I0 = Cin, I1 = 0, I2 = 1 and I3 = Cin
2E 2 Y0 Y4
2-to-4
(d) I0 = 0, I1 = Cin, I2 = 1 and I3 = Cin
2 Y1 Y5
Decoder [EC-2016 : 1 Mark]
2 A0 2 Y2 Y6
S 1 1 (d) ( P + Q + R ) ( P + Q + R ) ( P + Q + R )
S0 S0
[EC-2017 : 2 Marks]
T
Q.30 Figure I shows a 4-bit ripple carry adder realized
[EC-2016 : 2 Marks]
using full adders and Figure II shows the circuit
Q.28 Consider the circuit shown in the figure. of a full-adder (FA). The propagation delay of
the XOR, AND and OR gates in Figure II are
Y 0 20 ns, 15 ns and 10 ns, respectively. Assume all
the inputs to the 4-bit adder are initially
MUX 0
reset to 0.
0 1 MUX F Y3 X3 Y2 X 2 Y1 X1 Y 0 X0
1
Z3 Z2 Z1 Z0
X Z4 FA FA FA FA
Z
S3 S2 S1 S0
The Boolean expression F implemented by the Fig. (I)
(d) X Y Z + X Z + Y Z Yn Sn