FQB12P20 / FQI12P20

October 2008
®
QFET
FQB12P20 / FQI12P20
200V P-Channel MOSFET

General Description Features

These P-Channel enhancement mode power field effect • -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology. • Low Crss ( typical 30 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well • RoHS Compliant
suited for high efficiency switching DC/DC converters.

D S
!

●
G! ●

▶ ▲
●
G S
D2-PAK I2-PAK
G D S
FQB Series FQI Series !
D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQB12P20 / FQI12P20 Units

VDSS Drain-Source Voltage -200 V
ID Drain Current - Continuous (TC = 25°C) -11.5 A
- Continuous (TC = 100°C) -7.27 A
IDM Drain Current - Pulsed (Note 1) -46 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ
IAR Avalanche Current (Note 1) -11.5 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25°C) * 3.13 W
Power Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.96 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.04 °C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

 FQB12P20 / FQI12P20
Elerical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -200 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = -250 µA, Referenced to 25°C -- - -- V/°C
/ ∆TJ Coefficient
IDSS VDS = -200 V, VGS = 0 V -- -- -1 µA
Zero Gate Voltage Drain Current
VDS = -160 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V
RDS(on) Static Drain-Source
VGS = -10 V, ID = -5.75 A -- 0.36 0.47 Ω
On-Resistance
gFS Forward Transconductance VDS = -40 V, ID = -5.75 A (Note 4) -- 6.4 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 920 1200 pF
Coss Output Capacitance f = 1.0 MHz -- 190 250 pF
Crss Reverse Transfer Capacitance -- 30 40 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 20 50 ns
VDD = -100 V, ID = -11.5 A,
tr Turn-On Rise Time -- 195 400 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 40 90 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 60 130 ns
Qg Total Gate Charge VDS = -160 V, ID = -11.5 A, -- 31 40 nC
Qgs Gate-Source Charge VGS = -10 V -- 8.1 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 16 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -46 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.5 A -- -- -5.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -11.5 A, -- 180 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4)
-- 1.44 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

FQB12P20 / FQI12P20
Typical Characteristics

VGS
Top : -15.0 V
-10.0 V
-8.0 V
1 -7.0 V 1
10 10
-6.5 V
-6.0 V

-I D , Drain Current [A]

-I D, Drain Current [A]

Bottom : -5.5 V

150℃
0 0
10 10

25℃
※ Notes : ※ Notes :
1. 250μs Pulse Test -55℃ 1. VDS = -40V
2. TC = 25℃ 2. 250μs Pulse Test

-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2.0
Drain-Source On-Resistance

1.5 1
10
-I DR , Reverse Drain Current [A]

VGS = - 10V
RDS(on) [ Ω ],

VGS = - 20V
1.0

0
10

0.5
※ Notes :
150℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃
2. 250μs Pulse Test
-1
0.0 10
0 10 20 30 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

2400 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = -40V
2000 10
VDS = -100V
-V GS , Gate-Source Voltage [V]

VDS = -160V
1600 8
※ Notes :
Capacitance [pF]

Ciss
1. VGS = 0 V
1200
Coss 2. f = 1 MHz 6

800 4
Crss

400 2
※ Note : ID = -11.5 A

0 0
10
-1
10
0
10
1 0 5 10 15 20 25 30 35

-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

 FQB12P20 / FQI12P20
Typical Characteristics (Continued)

1.2 2.5

2.0
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
-BV DSS , (Normalized)

RDS(ON) , (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = -250 μA 1. VGS = -10 V
2. ID = -5.75 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

12
2 Operation in This Area
10
is Limited by R DS(on)
10

100 µs
1 ms 8
-I D, Drain Current [A]
-I D, Drain Current [A]

1
10
10 ms
DC 6

0
4
10
※ Notes :
o
1. TC = 25 C 2
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e

0
10

D = 0 .5

※ N o te s :
0 .2
1 . Z θ J C ( t ) = 1 . 0 4 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
-1
0 .1
10 3 . T J M - T C = P D M * Z θ J C( t )

0 .0 5

0 .0 2 PDM
0 .0 1
θ JC

t1
s in g le p u ls e t2
Z

-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

FQB12P20 / FQI12P20
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL
VDS t on t off

td(on) tr td(off)
VGS VDD tf

RG VGS
10%

-10V DUT

90%
VDS

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
tp Time
ID

RG VDD VDS (t)

VDD
ID (t)
-10V DUT
IAS
tp BVDSS

©2008 Fairchild Semiconductor International Rev. A1, Oct 20008

 FQB12P20 / FQI12P20
Peak Diode Recovery dv/dt Test Circuit & Waveforms

VDS

DUT _

I SD
L

Driver
RG
Compliment of DUT
(N-Channel) VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

Body Diode Reverse Current

I SD
( DUT ) IRM

di/dt

IFM , Body Diode Forward Current

VDS VSD
( DUT )

Body Diode VDD

Forward Voltage Drop

Body Diode Recovery dv/dt

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

FQB12P20 / FQI12P20
Mechanical Dimensions

D2 - PAK

Dimensions in Millimeters

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

 FQB12P20 / FQI12P20
Mechanical Dimensions

I2 - PAK

Dimensions in Millimeters

©2008 Fairchild Semiconductor International Rev. A1, Oct 2008

 FQB12P20 / FQI12P20
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Datasheet contains specifications on a product that is discontinued by Fairchild

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Semiconductor. The datasheet is for reference information only.
Rev. I37

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