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A Low-Power 1-V Supply Dynamic Comparator
A Low-Power 1-V Supply Dynamic Comparator
A Low-Power 1-V Supply Dynamic Comparator
3, 2020
II. P ROPOSED C IRCUIT Fig. 3. Proposed comparator schematic with the modified preamplifier and
The proposed comparator architecture is shown in Fig. 3. It consists the regenerative latch.
of a new modified preamplifier with the addition of the cross-coupled
devices (M21 and M22) and a regenerative latch. The operational
behavior of the proposed comparator circuit is explained as follows.
During the reset phase, when the applied clock is low, the transistors
M4, M5, M6, and M7 precharge the nodes intN, intP, N1, and P1 to
VDD and the transistors M17 and M18 reset the regenerative latch
output nodes (outP and outN). As the transistor M3 is turned off,
there is no direct flow of current from the supply to ground.
During the amplification phase, when the clock is high, the nodes
intP, intN, P1, and N1 are disconnected from VDD and M3 provides
a discharge path to ground. The amplification phase can be divided
into two subphases. The equivalent circuit in the first subphase is
shown in Fig. 4(a). At the instant that amplification starts, as the Fig. 4. Modified preamplifier equivalent circuit in (a) subphase-I and
gates of M3 and M21 are tied to VDD , the node N1 quickly gets (b) subphase-II.
discharged to a low voltage which is the IR drop across the switches
(M3 and M21). The node P1 behaves in a similar manner. Once the
transistors M1 and M2 start conducting and M21 and M22 operate in This forces the node intN to discharge at a reduced rate. The timing
the linear region (i.e., as resistors). As the voltages at nodes intP and diagram associated with this circuit is shown in Fig. 5.
intN decrease, at a rate controlled by the applied input voltages, the With the decrease of the node (intP and intN) voltages, we can
internal node N1 and P1 voltages will increase slowly. This behav- observe that the internal node (P1 and N1) voltages increase as shown
ior changes the effective Vgs of the input differential pair lowering in Fig. 5(c). This is because the ON resistance of the devices M21
the transconductance (gm ). For small input differential voltages, this and M22 increase as their gate potential (which are connected to
behavior can increase the conversion time of the comparator. Based the output nodes) decreases. The operational timing behavior of the
on the applied input differential voltage (vinP>vinN), the rate of proposed comparator ensures intP and intN only discharge to VD1
decrease of the node intN is faster than the node intP. As the node and VD2 as shown in Fig. 5(b). This is in contrast with the conven-
intN reaches to the threshold voltage of M22, the rate of decrease tional architecture, in which both the preamplifier output nodes will
of the node intP reduces and eventually intP will become static as discharge fully to ground as shown in Fig. 2(b).
transistor M22 turns off completely. For a given comparison time, the nodes intP and intN approach
With the node intP static, the operational behavior of the circuit the voltages VD1 and VD2 below VDD , respectively. Thus, the energy
changes. The equivalent circuit in this mode is as shown in Fig. 4(b). consumption is reduced to VDD ∗ Cp ∗ (VD1 + VD2 ). Thus, the
In this subphase, the transistor M22 is fully turned off and the tran- proposed comparator improves the power efficiency without the use
sistors M1 and M21 behave as a cascode current source. As the of any extra capacitors or more complex logic but with a simple
node intP is static, the gate potential of the transistor M21 is fixed. cross-coupled mechanism around the input differential pair. With the
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156 IEEE SOLID-STATE CIRCUITS LETTERS, VOL. 3, 2020
Fig. 6. Die micrograph: the inset shows the size of (a) conventional dou-
ble tail latch type comparator 24 µm×40 µm and (b) proposed comparator
25 µm×41 µm.
III. M EASUREMENTS
The two comparators shown in Figs. 1 and 3 were designed and
fabricated on the same die in a standard 65-nm CMOS process. In
order to have similar regeneration times, the same regenerative latch
is used in both the designs. Similarly, the sizes of the input pair M1 Fig. 8. Simulated comparator delay as a function of differential input voltages
and M2 are kept the same in both designs, with the only change for the conventional and the proposed comparator; VCM = 0.5 V.
being around the addition of the new cross-coupled devices (M21
and M22), to ensure a fair comparison. The die micrograph for both
designs is shown in Fig. 6 with the inset showing the dimensions. values, the wider spread of these measures for the proposed circuit
The proposed circuit occupies 6% higher area than the conventional is because of the extra noise generated by M21 and M22.
circuit. The parasitic extracted simulated delay with respect to the input
The input differential voltage was swept in steps of 100 µV from differential voltages of both the proposed and conventional compara-
−1 mV to 1 mV and 3000+ output comparisons are taken at ten tor circuits is shown in Fig. 8. For small input differential voltages,
different time instances for each input value. the proposed circuit spends more time in the weak-inversion region
Then, the measured probability of 1’s are fitted to the normal cumu- because of the less effective Vgs and reduced initial gm of the input
lative distribution function (CDF) to obtain the input referred rms pair. This causes higher conversion time for the proposed circuit. The
noise as shown in Fig. 7. From the plots, the measured input referred proposed circuit could be tuned to have similar initial gm as of the
rms noise voltage 220 µV of the proposed circuit can be observed conventional circuit to improve the conversion delay.
against 210 µV of the conventional comparator for a single sample. By varying the differential input voltages, the comparator power
The “x” marks in Fig. 7 indicate the spread of the probability 1’s (including both the preamplifier and the regenerative latch) is mea-
measured at ten different time instances. For small input differential sured at a clock rate of 25 MHz. The corresponding measured power
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CHEVELLA et al.: LOW-POWER 1-V SUPPLY DYNAMIC COMPARATOR 157
TABLE I
P ERFORMANCE S UMMARY AND C OMPARISON
ACKNOWLEDGMENT
The authors would like to acknowledge the support of Analog
Devices, Cork.
R EFERENCES
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IV. C ONCLUSION [7] H. S. Bindra, C. E. Lokin, A.-J. Annema, and B. Nauta, “A
In conclusion, the proposed comparator presented here achieves 30fJ/comparison dynamic bias comparator,” in Proc. 43rd IEEE Eur. Solid
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use of a simple cross-coupled mechanism. This makes the presented pp. C140–C141.
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