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Hoja de Datos 10n65k
Hoja de Datos 10n65k
, LTD
10N65K Power MOSFET
DESCRIPTION
The UTC 10N65K is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N65K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON)<1.2Ω @ VGS=10V, ID =5A
* Low Gate Charge (Typical 44nC)
* Low CRSS ( typical 18 pF)
* High Switching Speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
10N65KL-TF3-T 10N65KG-TF3-T TO-220F G D S Tube
10N65KL-TF1-T 10N65KG-TF1-T TO-220F1 G D S Tube
10N65KL-T2Q-T 10N65KG-T2Q-T TO-262 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw 1 of 7
Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-755.F
10N65K Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 23 55 ns
Turn-On Rise Time tR VDD=325V, ID =10A, 69 150 ns
Turn-Off Delay Time tD(OFF) RG =25Ω (Note 1, 2) 144 260 ns
Turn-Off Fall Time tF 77 105 ns
Total Gate Charge QG 44 57 nC
VDS=520V, ID=10A,
Gate-Source Charge QGS 6.7 nC
VGS=10 V (Note 1, 2)
Gate-Drain Charge QGD 18.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V
Maximum Continuous Drain-Source Diode
IS 10 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 38 A
Forward Current
Reverse Recovery Time trr VGS = 0 V, IS = 10A, 420 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/µs (Note 1) 4.2 µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
D.U.T. +
VDS
- L
RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IRM
VDS
90%
10%
VGS
tD(ON) tD(OFF)
tR tF
VGS
QG
10V
QGS QGD
Charge
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp Time
TYPICAL CHARACTERISTICS
250 250
Drain Current, ID (µA)
150 150
100 100
50 50
0 0
0 150 300 450 600 750 0 0.5 1 1.5 2 2.5 3 3.5
Drain-Source Breakdown Voltage, BVDSS (V) Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.