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APS12205 15 35 Datasheet
APS12205 15 35 Datasheet
and APS12235
High-Temperature Hall-Effect Latches
for Low Voltage Applications
3-pin SOT23W
(suffix LH)
3-pin SIP
(suffix UA)
VCC
To All Subcircuits
Low-Pass VOUT
Sample and Hold
Filter
Dynamic Offset
Cancellation
Amp Control
Current Limit
GND
SELECTION GUIDE
Part Number Packing [1] Mounting Branding Ambient, TA BRP (Min) BOP (Max)
APS12205ELHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A04
–40°C to 85°C
APS12205ELHALT [2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A04
APS12205LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A04 –40 G 40 G
APS12205LLHALT [2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A04 –40°C to 150°C
APS12205LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A18
APS12215LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A01
APS12215LLHALT [2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A01 –40°C to 150°C –90 G 90 G
APS12215LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A03
APS12235LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A35
APS12235LLHALT [2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A35 –40°C to 150°C –180 G 180 G
APS12235LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A36
RoHS
COMPLIANT
2
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
GND
1 2 3
VCC
VOUT
GND
1 2
VCC
VOUT
Package LH Package UA
Terminal List
Number
Name Description Package Package
LH UA
VCC Connects power supply to chip 1 1
VOUT Output from circuit 2 3
GND Ground 3 2
3
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
ELECTRICAL CHARACTERISTICS: Valid over full operating voltage and ambient temperature range, unless otherwise noted
Characteristics Symbol Test Conditions Min. Typ.[1] Max. Unit [2]
ELECTRICAL CHARACTERISTICS
Forward Supply Voltage VCC Operating, TJ < 175°C 2.8 – 5.5 V
Supply Current ICC VCC = 5.5 V – 2 3 mA
Output Leakage Current IOUTOFF VOUT = 5.5 V, B < BRP – – 10 µA
Output Saturation Voltage VOUT(SAT) IOUT = 5 mA, B > BOP – 50 500 mV
Output Current IOUT Recommended value used during characterization – 5 – mA
Output Short-Circuit Current Limit IOM B > BOP 30 – 60 mA
VCC ≥ 2.8 V, B < BRP(min) – 10 G,
Power-On Time [3] tON – – 25 µs
B > BOP(max) + 10 G
Power-On State, Output [3] POS VCC ≥ VCC(min), t < tON Low –
Chopping Frequency fC – 800 – kHz
Output Rise Time [3][4] tr RPULL-UP = 1 kΩ, CL = 20 pF – 0.2 2 µs
Output Fall Time [3][4] tf RPULL-UP = 1 kΩ, CL = 20 pF – 0.1 2 µs
MAGNETIC CHARACTERISTICS
APS12205 5 22 40 G
Operate Point BOP APS12215 15 50 90 G
APS12235 100 150 180 G
APS12205 –40 –22 –5 G
Release Point BRP APS12215 –90 –50 –15 G
APS12235 –180 –150 –100 G
APS12205 10 45 80 G
Hysteresis BHYS APS12215 (BOP – BRP) 30 100 180 G
APS12235 200 300 360 G
[1] Typical
data are are at TA = 25°C and VCC = 5 V, and are for initial design estimations only.
[2] 1G (gauss) = 0.1 mT (millitesla).
[3] Guaranteed by device design and characterization.
[4] C = oscilloscope probe capacitance.
L
4
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic Symbol Test Conditions Value Units
Package LH, 1-layer PCB with copper limited to solder pads 228 °C/W
Package LH, 2-layer PCB with 0.463 in.2 of copper area each
Package Thermal Resistance RθJA 110 °C/W
side connected by thermal vias
Package UA, 1-layer PCB with copper limited to solder pads 165 °C/W
VCC(max)
Maximum Allowable VCC (V)
5
Package LH, 2-layer PCB
(RθJA = 110 °C/W) (Right)
Package UA, 1-layer PCB
(RθJA = 165 °C/W) (Center)
Package LH, 1-layer PCB
4 (RθJA = 228 °C/W) (Left)
3
VCC(min)
2
25 45 65 85 105 125 145 165 185
Temperature (°C) TJ(max)
1500
1400
Package LH, 2-layer PCB
1300 (RθJA = 110°C/W)
1200 Package UA, 1-layer PCB
1100 (RθJA = 165°C/W)
1000
900
800
700
600
500
400
300
200 Package LH, 1-layer PCB
(RθJA = 228°C/W)
100
0
20 40 60 80 100 120 140 160 180
Temperature (°C)
5
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
CHARACTERISTIC PERFORMANCE
Electrical Characteristics
Average Supply Current versus Supply Voltage Average Supply Current versus Ambient Temperature
4.0 4.0
3.5 3.5
3.0 3.0
TA (°C) VCC (V)
ICC (mA)
2.5 2.5
ICC (mA)
-40 2.8
2.0 2.0
25 5
1.5 1.5
150 5.5
1.0 1.0
0.5 0.5
0.0 0.0
2.5 3 3.5 4 4.5 5 5.5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VCC (V) TA (°C)
Average Low Output Voltage versus Supply Voltage for IOUT = 5 mA Average Low Output Voltage versus Ambient Temperature for IOUT = 5 mA
500 500
450 450
400 400
VOUT(SAT) (mV)
350
300 -40 300
2.8
250 250
25
200 200 5
150 150
150 5.5
100 100
50 50
0 0
2.5 3 3.5 4 4.5 5 5.5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VCC (V) TA (°C)
6
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
Average Operate Point versus Supply Voltage Average Operate Point versus Ambient Temperature
40 40
35 35
TA (°C) 30
30
VCC (V)
-40
BOP (G)
25
BOP (G)
25 2.8
20 25 20 5
150 15 5.5
15
10 10
5
5
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.5 3 3.5 4 4.5 5 5.5 6
VCC (V) TA (°C)
Average Release Point versus Supply Voltage Average Release Point versus Ambient Temperature
-5 -5
-10 -10
TA (°C) -15
-15
VCC (V)
-40
BRP (G)
-20
BRP (G)
-20 2.8
-25 25 -25 5
-35 -35
-40
-40
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.5 3 3.5 4 4.5 5 5.5 6
VCC (V) TA (°C)
Average Switchpoint Hysteresis versus Supply Voltage Average Switchpoint Hysteresis versus Ambient Temperature
80 80
70 70
60 VCC (V)
60 TA (°C)
2.8
BHYS (G)
BHYS (G)
50 -40 50
5
40 25 40
5.5
30 150 30
20 20
10 10
2.5 3 3.5 4 4.5 5 5.5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VCC (V) TA (°C)
7
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
Average Operate Point versus Supply Voltage Average Operate Point versus Ambient Temperature
90 90
85 85
80 80
75 75
70
TA (°C) 70
65 65 VCC (V)
60 -40 60
BOP (G)
BOP (G)
55 55 2.8
50 25 50
45 45 5
40 40
150 35 5.5
35
30 30
25 25
20 20
15 15
2.5 3 3.5 4 4.5 5 5.5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VCC (V) TA (°C)
Average Release Point versus Supply Voltage Average Release Point versus Ambient Temperature
-15 -15
-20 -20
-25 -25
-30 -30
-35
TA (°C) -35
-40 -40 VCC (V)
-40 -45
BRP (G)
-45
BRP (G)
-50 2.8
-50
-55 -55
25 -60 5
-60
-65 -65
150 -70 5.5
-70
-75 -75
-80 -80
-85
-85
-90
-90
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.5 3 3.5 4 4.5 5 5.5 6
VCC (V) TA (°C)
Average Switchpoint Hysteresis versus Supply Voltage Average Switchpoint Hysteresis versus Ambient Temperature
180 180
170 170
160 160
150 150
140 140 VCC (V)
130
TA (°C) 130
2.8
BHYS (G)
BHYS (G)
8
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
Average Operate Point versus Supply Voltage Average Operate Point versus Ambient Temperature
180 180
170 170
BOP (G)
BOP (G)
2.8
140 140
25 5
130 130
150 5.5
120 120
110 110
100 100
2.5 3 3.5 4 4.5 5 5.5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VCC (V) TA (°C)
Average Release Point versus Supply Voltage Average Release Point versus Ambient Temperature
-100 -100
-110 -110
2.8
-140 -140
25 5
-150 -150
150 5.5
-160 -160
-170 -170
-180
-180
-60 -40 -20 0 20 40 60 80 100 120 140 160
2.5 3 3.5 4 4.5 5 5.5 6
VCC (V) TA (°C)
Average Switchpoint Hysteresis versus Supply Voltage Average Switchpoint Hysteresis versus Ambient Temperature
360 360
350 350
340 340
330 330
320 320 VCC (V)
310 TA (°C) 310
300 300 2.8
BHYS (G)
BHYS (G)
9
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
FUNCTIONAL DESCRIPTION
OPERATION Device power-on occurs once tON has elapsed. During the
The output of these devices switches low (turns on) when a mag- time prior to tON, and after VCC ≥ VCC(min), the output state is
netic field perpendicular to the Hall element exceeds the operate VOUT(SAT) (Low). After tON has elapsed, the output will corre-
point threshold, BOP (see Figure 1). After turn-on, the output volt- spond with the applied magnetic field for B > BOP or B < BRP.
age is VOUT(SAT) . The output transistor is capable of continuously See Figure 2 for an example.
sinking up to 30 mA. When the magnetic field is reduced below
Powering-on the device in the hysteresis range (less than BOP and
the release point, BRP , the device output goes high (turns off).
higher than BRP) will give an output state of VOUT(SAT). The cor-
The difference in the magnetic operate and release points is the
rect state is attained after the first excursion beyond BOP or BRP .
hysteresis, BHYS , of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external
mechanical vibration and electrical noise.
POS
Removal of the magnetic field will leave the device output
B > BOP, BRP < B < BOP
latched on if the last crossed switchpoint is BOP, or latched off if
V
the last crossed switch point is BRP. B < BRP
V+ Undefined for
VOUTOFF VCC< VCC(min) POS
VOUT(SAT )
Switch to High
Switch to Low
t
V
VOUT
VCC (min)
VCC
VOUT(SAT)
0 0
B– 0 B+
t ON t
BOP
BRP
10
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
APPLICATIONS
It is strongly recommended that an external bypass capacitor be
VS
connected (in close proximity to the Hall element) between the
supply and ground of the device to guarantee correct performance
under harsh environmental conditions and to reduce noise from VCC RPULL-UP
internal circuitry. As is shown in Figure 3, a 0.1 µF capacitor is
typical. CBYP
APS122xx
VOUT
0.1 µF
Extensive applications information on magnets and Hall-effect Output
sensors is available in:
GND
• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’s Products – SMD and
Through-Hole, AN26009 Figure 3: Typical Application Circuit
11
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
CHOPPER STABILIZATION offset, causing the magnetically induced signal to recover its orig-
A limiting factor for switchpoint accuracy when using Hall-effect inal spectrum at baseband while the DC offset becomes a high-
technology is the small signal voltage developed across the Hall frequency signal. Then, using a low-pass filter, the signal passes
plate. This voltage is proportionally small relative to the offset while the modulated DC offset is suppressed. Allegro’s innova-
that can be produced at the output of the Hall sensor. This makes tive chopper stabilization technique uses a high-frequency clock.
it difficult to process the signal and maintain an accurate, reliable The high-frequency operation allows a greater sampling rate
output over the specified temperature and voltage range. Chopper that produces higher accuracy, reduced jitter, and faster signal
stabilization is a proven approach used to minimize Hall offset. processing. Additionally, filtering is more effective and results in
a lower noise analog signal at the sensor output. Devices such as
The Allegro technique, dynamic quadrature offset cancellation,
the APS12205, APS12215, and APS12235 that use this approach
removes key sources of the output drift induced by temperature
have an extremely stable quiescent Hall output voltage, are
and package stress. This offset reduction technique is based on a
immune to thermal stress, and have precise recoverability after
signal modulation-demodulation process. Figure 4 illustrates how
temperature cycling. This technique is made possible through the
it is implemented.
use of a BiCMOS process which allows the use of low offset and
The undesired offset signal is separated from the magnetically low noise amplifiers in combination with high-density logic and
induced signal in the frequency domain through modulation. The sample-and-hold circuits.
subsequent demodulation acts as a modulation process for the
Clock/Logic
Low-Pass
Hall Element Filter
Sample and
Hold
Amp
12
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
POWER DERATING For example, given common conditions such as: TA= 25°C,
The device must be operated below the maximum junction tem- VCC = 5 V, ICC = 2.5 mA, VOUT = 185 mV, IOUT = 2 mA (output
perature of the device, TJ(max). Under certain combinations of on), and RθJA = 165°C/W, then:
peak conditions, reliable operation may require derating supplied
PD = (VCC × ICC) + (VOUT × IOUT) =
power or improving the heat dissipation properties of the appli-
(5 V × 2.5 mA) + (185 mV × 2 mA) =
cation. This section presents a procedure for correlating factors
12.5 mW + 0.4 mW = 12.9 mW
affecting operating TJ. (Thermal data is also available on the
Allegro MicroSystems website.) ΔT = PD × RθJA = 12.9 mW × 165°C/W = 2.1°C
The Package Thermal Resistance, RθJA, is a figure of merit sum- TJ = TA + ΔT = 25°C + 2.1°C = 27.1°C
marizing the ability of the application and the device to dissipate
A worst-case estimate, PD(max), represents the maximum allow-
heat from the junction (die), through all paths to the ambient air.
able power level (VCC(max), ICC(max)), without exceeding
Its primary component is the Effective Thermal Conductivity, K,
TJ(max), at a selected RθJA.
of the printed circuit board, including adjacent devices and traces.
Radiation from the die through the device case, RθJC, is relatively For example, given the conditions RθJA = 228°C/W, TJ(max) =
small component of RθJA. Ambient air temperature, TA, and air 175°C, VCC(max) = 5.5 V, ICC(max) = 4 mA, VOUT = 500 mV,
motion are significant external factors, damped by overmolding. and IOUT = 5 mA (output on), the maximum allowable operating
ambient temperature can be determined.
The resulting power dissipation capability directly reflects upon
the ability of the device to withstand extreme operating condi- The power dissipation required for the output is shown below:
tions. The junction temperature mission profile specified in the
PD(VOUT) = VOUT × IOUT = 500 mV × 5 mA = 2.5 mW
Absolute Maximum Ratings table designates a total operating life
capability based on qualification for the most extreme conditions, The power dissipation required for the IC supply is shown below:
where TJ may reach 175°C.
PD(VCC) = VCC × ICC = 5.5 V × 4 mA = 22 mW
The silicon IC is heated internally when current is flowing into
Next, by inverting using equation 2:
the VCC terminal. When the output is on, current sinking into the
VOUT terminal generates additional heat. This may increase the ΔT = PD × RθJA = [PD(VOUT) + PD(VCC)] × 228°C/W =
junction temperature, TJ, above the surrounding ambient tempe- (2.5 mW + 22 mW) × 228°C/W =
rature. The APS12205, APS12215, and APS12235 are permitted 24.5 mW × 228°C/W = 5.6°C
to operate up to TJ = 175°C. As mentioned above, an operating
Finally, by inverting equation 3 with respect to voltage:
device will increase TJ according to equations 1, 2, and 3 below.
This allows an estimation of the maximum ambient operating TA(est) = TJ(max) – ΔT = 175°C – 5.6°C = 169.4°C
temperature.
In the above case there is only sufficient power dissipation
PD = VIN × IIN (1) capability to operate up to TA(est). This particular result indicates
that, at TJ(max), the application and device can only dissipate
ΔT = PD × RθJA (2) adequate amounts of heat at ambient temperatures ≤ TA(est);
the APS12205, APS12215, and APS12235 performance is not
TJ = TA + ΔT (3) guaranteed above T = 150°C for the “L” temperature variant and
A
TA = 85°C for the “E” temperature variant.
13
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
+0.125
2.975 –0.075
4°±4°
3 Active Area Depth
0.28 ±0.04 mm
+0.020
0.180–0.053
Die Rotation
Error 4° Max 2.40
0.70
+0.10 +0.19
2.90 –0.20 1.91 –0.06
1.00
Hall Element 0.25 MIN
(not to scale) 0.38 NOM
Package Centerline
to Die Centerline ±0.15 0.95
1 2
PCB Layout Reference View
Package Centerline 0.55 REF 0.25 BSC All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to Die Centerline ±0.20
Seating Plane to meet application process requirements and PCB layout tolerances
Gauge Plane
0.57 ±0.04
3× 1.00 ±0.13 C
A01 A35
1 1
APS12215LLHA APS12235LLHA
14
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
+0.08
4.09 –0.05
3.00 ±0.05
2.04
Mold gate and tie bar Sensor element location tolerance
protrusion zone Standard ±0.20
0.15 MAX
Ejector pin 0.50 ±0.08 Active Area Depth
(far side) +0.05
Including gate and 0.08 –0.00
tie bar burrs
Ejector pin flash
Sensor element location tolerance protrusion
1.44 Standard ±0.20
3.10 MAX +0.08
3.02 –0.05
Hall Element
(not to scale) 45°
10° (3×)
0.51 REF
0.05 NOM
0.05 NOM
0.10 MAX
0.10 MAX
Dambar Trim Detail
1 1 1
APS12205LUAA APS12215LUAA APS12235LUAA
15
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
APS12205,
APS12215,
High-Temperature Hall-Effect Latches
and APS12235 for Low Voltage Applications
Revision History
Number Date Description
– June 3, 2016 Initial release
Updated Functional Block Diagram (page 1);
1 June 20, 2016 Updated Selection Guide (page 2) and package outline drawing brand information (pages 14-
15).
Updated Title (all pages), Selection Guide (page 2), Absolute Maximum Ratings (page 2);
Electrical Characteristics (page 4); added Characteristic Performance Data (pages 6-9);
2 September 23, 2016
updated Functional Description (page 6), Chopper Stabilization (page 12), and Power
Derating sections (page 13).
Updated TJ(max) notes (page 2), Typical Application Circuit (page 11), Power Derating section
3 July 5, 2018
(page 13), Package Outline Drawings (pages 14-15), and other minor editorial updates.
Updated Selection Guide (page 2), Power Derating section (page 13), and Package Outline
4 June 18, 2019
Drawing branding (page 14).
5 September 10, 2021 Updated Supply Current maximum value (page 4) and package drawings (page 14-15)
16
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com