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KBP2005G 210G
KBP2005G 210G
KBP2005G 210G
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS KBP
Characteristic KBP
Symbol 2005G KBP KBP KBP KBP KBP KBP Unit
201G 202G 204G 206G 208G 210G
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 50 100 200 400 600 800 1000 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @ TC = 105°C IO 2.0 A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load IFSM 65 A
(JEDEC method)
Forward Voltage per element @ IF = 2.0A VFM 1.1 V
Peak Reverse Current @ TC = 25°C 5.0
at Rated DC Blocking Voltage @ TC = 125°C IRM 500 µA
Notes: 1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
1.0
Ambient
0.1
0.5
Pulse Width
= 300 µs
0
0
0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100 100
Tj = 25°C
Tj = 150°c
f = 1MHz
Single Half
IFSM, PEAK FWD SURGE CURRENT (A)
Sine Wave
(JEDEC Method)
60
10
40
20
0 1
1 10 100 1 10 100
10,000
IR, INSTANTANEOUS REVERSE CURRENT (mA)
1000
Tj = 150°C
100 Tj = 125°C
Tj = 100°C
10
1.0
Tj = 25°C
0.1
0.01
0 20 40 60 80 100 120 140