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    Arthreya Krishnakumar
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    This experiment aimed to study the V-I characteristics of a Gunn diode oscillator. The apparatus used included a Gunn oscillator, SWR meter, pin modulator, and microwave test bench. The theory section explained that above a certain threshold voltage, Gunn diodes exhibit negative resistance due to domain formation in the active region. The procedure measured the voltage, current, and frequency output of the Gunn diode oscillator at different bias voltages. Observations showed increasing voltage, current, and frequency with increasing bias until saturation. The conclusion was that the experiment successfully observed the V-I characteristics and understood the negative resistance behavior.

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    MEL exp2

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    This experiment aimed to study the V-I characteristics of a Gunn diode oscillator. The apparatus used included a Gunn oscillator, SWR meter, pin modulator, and microwave test bench. The theory section explained that above a certain threshold voltage, Gunn diodes exhibit negative resistance due to domain formation in the active region. The procedure measured the voltage, current, and frequency output of the Gunn diode oscillator at different bias voltages. Observations showed increasing voltage, current, and frequency with increasing bias until saturation. The conclusion was that the experiment successfully observed the V-I characteristics and understood the negative resistance behavior.

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    © All Rights Reserved
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    2 views5 pages

    MEL Exp2

    Uploaded by

    Arthreya Krishnakumar
    This experiment aimed to study the V-I characteristics of a Gunn diode oscillator. The apparatus used included a Gunn oscillator, SWR meter, pin modulator, and microwave test bench. The theory section explained that above a certain threshold voltage, Gunn diodes exhibit negative resistance due to domain formation in the active region. The procedure measured the voltage, current, and frequency output of the Gunn diode oscillator at different bias voltages. Observations showed increasing voltage, current, and frequency with increasing bias until saturation. The conclusion was that the experiment successfully observed the V-I characteristics and understood the negative resistance behavior.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 5

    Date 3o/0L/24

    Expt. No. Page No. 09

    Expeiment - 02

    Aim: lo shudy tte VI ehaxactexis ics d Gnn Diode

    Appaatu Required'
    " Gunn OscillatoY SWR metex
    " Pin Modulato Matehed locd
    MieYoNCwe test beneh BNC Coble

    Gumn diode henegahve xCsistamee deviee


    devices whieh ae normmally
    Theoxy Locs paaeh cseilatey The

    baic struchure a humn diode is e n: type GaAs


    Semieonduekoy
    eunent wtl inareae
    valkage vottage Alts #he dinde vdtage exeeeds a

    entain teslaold value (Va), a bigh eleehree fredi


    (Ve), a
    produced te. octive zeglen he electrens get
    eneitedRem losen valley to a
    heeome te xate
    vixtually Inmabile. urent tsufe
    vey high, the wit deerecse wit
    elechons
    Nelkage, rautiug ian qpivalent
    TeSisteaee

    Gunn6eillaos : Oseilato te Guun dicdeis kept


    Telon aMt The oseillation is

    determimed by cavih dimeusian than by dicde ' isey


    be anmplihude - modulatedwit& ehe bies

    volBuqe have depenate PIN medeatey thYo ugh


    PIN dicde modulatn
    Teacher's Signature
    Metal (Au) Contact (amode)
    ’n Sulbstrate

    nt- loye
    Metad Au) stud (cothode)

    (b)
    tig 2.! Constructional detoils ond elechieal
    euivlunt eireuit Gun Diode
    Date

    Expt. No. Page No. 10

    Procedure- we

    Dnitialy set vaç able attemuatoy tox maximum attenuaiom


    2. Contol knobs the Guon Poceer uppy
    [uppy is. set belo
    " Meter Switeh-'OFE " Pin blay knob - Fuu AC fuy
    *Gumn bias lench fuly Aew Pin Mod freg, - Any posihon
    3 Cenhel knobs V9WR meter helau'
    Meter Switeh -Normal " Range JB Suith - 40dB
    " Tnput Swit - Low Tmpedenee Chaln Conbro enob - Fuley kW
    mieYo metes Cunn Oseillator fer equined teqney
    perahon.
    5. we swlth ON e Gunn Poua Supply, VSwR
    VSwR metes k

    Obserya tom?

    Voltage (v Cunent (m Votuge (v) Guneut aA VoltgeC)Cunewt CuA Vottuge Cnot (


    reshold
    G6 3-8 l14 S.2

    O.2 4 3.4 (12


    los
    0.3
    20 4.] 96
    21
    2 2.2 43 4.2
    31 2-4 4.3 72 S.9
    2.6 102 4.5 6.0
    36
    O.8 41 2.8 73 6-25 49
    0.9 46 3.0 4. 75 630 99
    1.0 SI 3.2 44 675 48
    12 46 48
    1:22 3.4 S.0
    13 62 3.6 ||3 40

    Teacher's Signature
    Volkoge

    (4

    fig 2.2 VI ehazateristies Guunn Oseillaey


    Date

    Expt. No. Page No.

    Conelusion: Ne
    We have obscve d te VÊ chaadtesisties e
    Gumm diode and cndestood the reallzehon
    nCistanee wigit.
    Pre aaution:
    de detedtox tlhold nat be esposed to
    2. VSwR neadisgs and fequuty adjuatments hould be
    dene clemeuts
    3. AU pxcpety abauld be prapealy tune

    Teacher's Signature

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