Analysis:

In the experiment, the gate-source voltage (V GS) varied from 0 to -6 volts, and the drain-
source voltage (VDS) ranged from 0 to 8 volts. When setting the gate-source and drain-source
voltage to 0 V, the drain current (I D) was 0 mA. Increasing the gate-source voltage (V GS) showed
a consistent 0 mA current through the drain (I D). This absence of current indicates that the
transistor is in the cut-off region, non-conductive under these voltage conditions. The
observation of ID yielding 0 mA when the gate-source voltage is -1 to -6 volts is caused by the
characteristics of the MPF-102 Transistor, where a negative gate-source voltage generates a
depletion region in the channel, limits the flow of current. When the gate-source voltage (V GS) is
set to 0V and the drain-source voltage (V DS) ranged from 1 to 8 volts, the transistor conducts.
This shift from cut-off to active conduction was verified with a digital multimeter, indicating
current flow between the drain and source terminals at 0V gate-source voltage. The MPF-102
Transistor graph demonstrates a direct and proportional relationship between the drain-source
voltage (VDS) and the drain current (ID). As the drain-source voltage increased from 1 V to 8 V, I D
yields a consistent increase. The initial step up from 0V to 2V caused an increase in the drain
current (ID) from 0 mA to 7.52 mA, demonstrating the transistor’s sensitivity to voltage changes.
This pattern continues with subsequent increases in drain-source voltage (V DS), with current
values reaching 8.2 mA at 3 V and eventually peaking at 10.9 mA at 8 V.

Conclusion:
In summary, the experiment with the MPF-102 Transistor reveals that the device operates
in the cut-off region, exhibiting non-conductivity when the gate-source voltage (V GS) is set to -1
to -6 volts. Conversely, when the gate-source voltage is set to 0 V and the drain-source voltage
(VDS) increases from 1 to 8 volts, the transistor transitions to active conduction. The observed
direct and proportional relationship between drain-source voltage (V DS) and drain current (ID)
indicates the transistor's sensitivity to voltage changes, with increasing VDS resulting in a
consistent rise in drain current (ID).