42mW - 650V SiC Cascode | UF3C065040K3S

Datasheet
Description
CASE CASE
United Silicon Carbide's cascode products co-package its high- D (2)
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are G (1)
excellent for switching inductive loads when used with recommended RC-
snubbers, and any application requiring standard gate drive.
1 2 3
S (3)

Part Number Package Marking

UF3C065040K3S TO-247-3L UF3C065040K3S

Features Typical Applications

w Typical on-resistance RDS(on),typ of 42mW w EV charging
w Maximum operating temperature of 175°C w PV inverters
w Excellent reverse recovery w Switch mode power supplies
w Low gate charge w Power factor correction modules
w Low intrinsic capacitance w Motor drives
w ESD protected, HBM class 2 w Induction heating
Very low switching losses (required RC-snubber loss negligible
w
under typical operating conditions)

Maximum Ratings
Parameter Symbol Test Conditions Value Units
Drain-source voltage VDS 650 V
Gate-source voltage VGS DC -25 to +25 V
TC=25°C 54 A
Continuous drain current 1 ID
TC=100°C 40 A
2
Pulsed drain current IDM TC=25°C 125 A
Single pulsed avalanche energy 3 EAS L=15mH, IAS=3.19A 76 mJ
Power dissipation Ptot TC=25°C 326 W
Maximum junction temperature TJ,max 175 °C
Operating and storage temperature TJ, TSTG -55 to 175 °C
Max. lead temperature for soldering,
TL 250 °C
1/8” from case for 5 seconds
1 Limited by TJ,max
2 Pulse width tp limited by TJ,max
3 Starting TJ = 25°C

Rev. A, December 2018 1 For more information go to www.unitedsic.com.

 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

Electrical Characteristics (TJ = +25°C unless otherwise specified)

Typical Performance - Static

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 650 V
VDS=650V,
0.7 150
VGS=0V, TJ=25°C
Total drain leakage current IDSS mA
VDS=650V,
10
VGS=0V, TJ=175°C
VDS=0V, Tj=25°C,
Total gate leakage current IGSS 6 20 mA
VGS=-20V / +20V
VGS=12V, ID=40A,
42 52
TJ=25°C
Drain-source on-resistance RDS(on) mW
VGS=12V, ID=40A,
78
TJ=175°C
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 5 6 V
Gate resistance RG f=1MHz, open drain 4.5 W

Typical Performance - Reverse Diode

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Diode continuous forward current 1 IS TC=25°C 54 A
2
Diode pulse current IS,pulse TC=25°C 125 A
VGS=0V, IF=20A,
1.5 1.75
TJ=25°C
Forward voltage VFSD V
VGS=0V, IF=20A,
1.8
TJ=175°C

VR=400V, IF=40A,
Reverse recovery charge Qrr 138 nC
VGS=-5V, RG_EXT=20W
di/dt=1100A/ms,
Reverse recovery time trr TJ=25°C 38 ns

VR=400V, IF=40A,
Reverse recovery charge Qrr 137 nC
VGS=-5V, RG_EXT=20W
di/dt=1100A/ms,
Reverse recovery time trr TJ=150°C 38 ns

Rev. A, December 2018 2 For more information go to www.unitedsic.com.

 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

Typical Performance - Dynamic

Value
Parameter symbol Test Conditions Units
Min Typ Max
Input capacitance Ciss VDS=100V, 1500
Output capacitance Coss VGS=0V, 200 pF
Reverse transfer capacitance Crss f=100kHz 2.2
VDS=0V to 400V,
Effective output capacitance, energy related Coss(er) 146 pF
VGS=0V
VDS=0V to 400V,
Effective output capacitance, time related Coss(tr) 325 pF
VGS=0V
COSS stored energy Eoss VDS=400V, VGS=0V 11.7 mJ
Total gate charge QG 51
VDS=400V, ID=40A,
Gate-drain charge QGD 11 nC
VGS=-5V to 15V
Gate-source charge QGS 19
Turn-on delay time td(on) VDS=400V, ID=40A, Gate 35
Rise time tr Driver=-5V to +15V, 24
ns
Turn-off delay time td(off) Turn-on RG,EXT=1.8W, 57
Fall time tf Turn-off RG,EXT=22W 14
4 Inductive Load,
Turn-on energy including RS energy EON 500
FWD: same device with
4
Turn-off energy including RS energy EOFF VGS = -5V and RG = 22W 118
Total switching energy including RS energy 4
ETOTAL RC snubber: RS=5W 618 mJ
Snubber RS energy during turn-on ERS_ON and CS=150pF 1.7
TJ=25°C
Snubber RS energy during turn-off ERS_OFF 4.5
Turn-on delay time td(on) VDS=400V, ID=40A, Gate 35
Rise time tr Driver=-5V to +15V, 22
ns
Turn-off delay time td(off) Turn-on RG,EXT=1.8W, 60
Fall time tf Turn-off RG,EXT=22W 13
4 Inductive Load,
Turn-on energy including RS energy EON 479
FWD: same device with
4
Turn-off energy including RS energy EOFF VGS = -5V and RG = 22W 124
Total switching energy including RS energy 4
ETOTAL RC snubber: RS=5W 603 mJ
Snubber RS energy during turn-on ERS_ON and CS=150pF 1.8
TJ=150°C
Snubber RS energy during turn-off ERS_OFF 5.3
4 The switching performance are evaluated with a RC snubber circuit as shown in Figure 24.

Thermal Characteristics

Value
Parameter symbol Test Conditions Units
Min Typ Max
Thermal resistance, junction-to-case RqJC 0.35 0.46 °C/W

Rev. A, December 2018 3 For more information go to www.unitedsic.com.

 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet
Typical Performance Diagrams

100 100

80 80
Drain Current, ID (A)

Drain Current, ID (A)

60 60
Vgs = 15V
Vgs = 8V Vgs = 15V
40 40
Vgs = 7V Vgs = 8V
Vgs = 6.5V Vgs = 7V
20 20 Vgs = 6.5V
Vgs = 6V
Vgs = 6V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1 Typical output characteristics Figure 2 Typical output characteristics

at T J = - 55°C, tp < 250 m s at T J = 25°C, tp < 250 m s

100 2.0
Vgs = 15V
Vgs = 8V
On Resistance, RDS_ON (P.U.)

80 Vgs = 7V
1.5
Drain Current, ID (A)

Vgs = 6.5V
Vgs = 6V
60
Vgs = 5.5V
1.0
40

0.5
20

0 0.0
0 1 2 3 4 5 6 7 8 9 10 -75 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3 Typical output characteristics Figure 4 Normalized on-resistance vs.

at T J = 175°C, tp < 250 m s temperature at V GS = 12V and
I D = 40A

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

160 100

140 Tj = 175°C Tj = 175°C

Tj = 25°C
On-Resistance, RDS(on) (mW)

80 Tj = 25°C
120 Tj = - 55°C

Drain Current, ID (A)

Tj = -55°C
100 60
80

60 40

40
20
20

0 0
0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A) Gate-Source Voltage, VGS (V)

Figure 5 Typical drain-source Figure 6 Typical transfer characteristics

on-resistance at V GS = 12V at V DS = 5V

6 20
Gate-Source Voltage, VGS (V)

5
Threshold Voltage, Vth (V)

15

4
10
3

5
2

1 0

0
-5
-100 -50 0 50 100 150 200
0 10 20 30 40 50 60
Junction Temperature, TJ (°C) Gate Charge, QG (nC)

Figure 7 Threshold voltage vs. T J Figure 8 Typical gate charge

at V DS = 5V and I D = 10mA at V DS = 400V and I D = 40A

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

0 0
Vgs = -5V
Vgs = 0V
-20 Vgs = 5V -20
Drain Current, ID (A)

Drain Current, ID (A)

Vgs = 8V

-40 -40
Vgs = - 5V
Vgs = 0V
-60 -60
Vgs = 5V
Vgs = 8V

-80 -80
-4 -3 -2 -1 0 -4 -3 -2 -1 0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 9 3rd quadrant characteristics Figure 10 3rd quadrant characteristics

at T J = - 55°C at T J = 25°C

0 30

25
-20
Drain Current, ID (A)

20
EOSS (mJ)

-40 15
Vgs = - 5V
Vgs = 0V 10
-60 Vgs = 5V
Vgs = 8V 5

-80 0
-4 -3 -2 -1 0 0 100 200 300 400 500 600
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 11 3rd quadrant characteristics Figure 12 Typical stored energy in C OSS

at T J = 175°C at V GS = 0V

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

10000 60

Ciss
50

DC Drain Current, ID (A)

1000
Capacitance, C (pF)

40
Coss
100
30

20
10
Crss 10
1
0 100 200 300 400 500 600 0
Drain-Source Voltage, VDS (V) -75 -50 -25 0 25 50 75 100 125 150 175
Case Temperature, TC (°C)

Figure 13 Typical capacitances at 100kHz Figure 14 DC drain current derating

and V GS = 0V

400 1

350
Thermal Impedance, ZqJC (°C/W)
Power Dissipation, Ptot (W)

300
0.1
250
D = 0.5
200 D = 0.3
D = 0.1
150
0.01 D = 0.05
100 D = 0.02
D = 0.01
50
Single Pulse
0 0.001
-75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Case Temperature, TC (°C) Pulse Time, tp (s)

Figure 15 Total power dissipation Figure 16 Maximum transient thermal impedance

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

150
1ms
100 125

100
Drain Current, ID (A)

10ms

Qrr (nC)
10
75
100ms
50 VDD = 400V, IS = 40A,
1
1ms di/dt = 1100A/ms,
DC 10ms 25
VGS = -5V, RG =20W

0.1 0
1 10 100 1000 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 17 Safe operation area Figure 18 Reverse recovery charge Qrr vs.
T c = 25°C, D = 0, Parameter t p junction temperture

1000 8
VDD = 400V, VGS = -5V/15V
7 Rs Etot
RC snubber: CS=150pF, RS=5W
Rs Eon
Snubber RS Energy (mJ)
Switching Energy (mJ)

800 FWD: same device with

6
VGS=-5V, RG=22W Rs Eoff
600 5
Etot
Eon 4
400 Eoff
3

2
200
1

0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Drain Current, ID (A) Drain Current, ID (A)
(a) (b)
Figure 19 Clamped inductive switching energy (a) and RC snubber energy loss (b) vs. drain current
at T J = 25°C, turn-on R G_EXT =1.8 W and turn-off R G_EXT = 22 W

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

600 3

Turn-on Sunbber RS Energy (mJ)

500
Turn-on Energy, Eon (mJ)

400 2

300
VDD = 400V, ID = 40A,
VGS = -5V/15V, TJ = 25°C
200 RC snubber: CS=150pF, RS = 5W 1
FWD: same device with VGS = -5V,
100 RG = 22W

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Total External Turn-on RG, RG,EXT (W) Total External Turn-on RG, RG_EXT (W)

(a) (b)
Figure 20 Clamped inductive switching turn-on energy including RC snubber energy loss (a) and
RC snubber energy loss (b) as a function of total external turn-off gate resistor R G_EXT .

250 6
Turn-off Sunbber RS Energy (mJ)

5
200
Turn-Off Energy, Eoff (mJ)

4
150
3
VDD = 400V, ID = 40A, VGS
100
= -5V/15V, TJ = 25°C 2
RC snubber: CS=150pF,
50 RS = 5W, FWD: same
device with VGS = -5V 1

0 0
0 10 20 30 40 50 0 10 20 30 40 50
Total External Turn-off RG, RG,EXT (W) Total External Turn-off RG, RG_EXT (W)

(a) (b)
Figure 21 Clamped inductive switching turn-off energy including RC snubber energy loss (a) and
RC snubber energy loss (b) as a function of total external turn-off gate resistor R G_EXT .

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

800 8
Etot
700 Eon 7
Switching Energy (mJ)

Snubber RS Energy (mJ)

Eoff
600 6

500 5
Rs Etot
400 VDD = 400V, VGS = -5V/15V 4
Rs Eon
RG_ON = 1.8W, RG_OFF = 22W
300 3 Rs Eoff
FWD: same device with VGS=-5V, RG=22W
200 RC snubber: CS = 150pF, RS = 5W 2

100 1

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

(a) (b)
Figure 22 Clamped inductive switching energy including RC snubber energy loss (a) and
RC snubber energy loss (b) as a function of junction temperature at I D = 40A

800 16
Etot
700 Eon 14
Eoff
Switching Energy (mJ)

Snubber RS Energy (mJ)

600 12 Rs Etot
Rs Eon
500 10
Rs Eoff
400 8
VDD = 400V, VGS = -5V/15V
300 RG_ON = 1.8W, RG_OFF = 22W 6
FWD: same device with VGS=-5V, RG=22W
200 4
RC snubber: RS = 5W
100 2

0 0
0 100 200 300 400 0 100 200 300 400
Snubber Capacitance, CS (pF) Snubber Capacitance, CS (pF)

(a) (b)
Figure 23 Clamped inductive switching energy including RC snubber energy loss (a) and RC snubber
energy loss (b) as a function of the snubber capacitance Cs at I D = 40A and T J = 25°C

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 42mW - 650V SiC Cascode | UF3C065040K3S
Datasheet

Figure 24 Inductive load switching test circuit

An RC snubber (R S = 5 W , C S = 150pF) is required to improve the turn-off waveforms.

Applications Information

SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon
MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the
off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior
performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr)
leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating
the need for an external anti-parallel diode.

Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due
to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order
to achieve the optimum reverse recovery performance. For more information on cascode operation, see www.unitedsic.com.

Disclaimer

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical
specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies
within.

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual
property rights is granted within this document.

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc.
products and services described herein.

Rev. A, December 2018 11 For more information go to www.unitedsic.com.