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Part1 Chapter1 CMOS Recall EE3165
Part1 Chapter1 CMOS Recall EE3165
Reference
Chapter 1:
MOS Transistor
Theory
1. MOS transistor operation
2. I-V characteristics
3. C-V characteristics
4. DC transfer characteristics
❑ Operating modes
V <0 g
silicon dioxide insulator
+
- p-type body
– Accumulation
– Depletion (a)
(b)
Vg > Vt
inversion region
+
- depletion region
(c)
– Vgs = Vg – Vs Vgs
+ +
Vgd
– Vgd = Vg – Vd - -
Vgs = 0 Vgd
+ g +
- -
s d
n+ n+
p-type body
b
Vgs > Vt
Vgs > Vgd > Vt
+ g +
- - Ids
s d
n+ n+
0 < Vds < Vgs-Vt
p-type body
b
Vgs > Vt
g Vgd < Vt
+ +
- -
s d Ids
n+ n+
Vds > Vgs-Vt
p-type body
b
I ds = Vgs − Vt − dsat V
V
dsat
2
( − Vt )
2
= V gs
2
0 Vgs Vt cutoff
Vds V V V
I ds = Vgs − Vt − ds linear
2
ds dsat
(Vgs − Vt )
2
Vds Vdsat saturation
2
Ids (mA)
gs
0.5
– Use W/L = 4/2 l
V =2 gs
V =1 gs
0
0 1 2 3 4 5
W 3.9 8.85 10−14 W W Vds
= Cox = ( 350 ) −8 = 120 μA/V 2
L 100 10 L L
-0.2
provide same current Vgs = -3
Ids (mA)
-0.4
Vgs = -4
n / p = 2 -0.6
Vgs = -5
-0.8
-5 -4 -3 -2 -1 0
Vds
polysilicon
gate
W
tox
L SiO2 gate oxide
n+ n+ (good insulator, eox = 3.9e0)
p-type body
VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn
VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn
Idsn Vgsn4
-Vdsp Vgsn3
-VDD Vgsn2
Vgsp1 Vgsn1
Vgsp2 0 VDD
Vgsp3 Vdsn
Vgsp4 -Idsp
Vgsp5
Vin0 Vin5
Vin1 Vin4
Idsn, |Idsp|
Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
VDD
Vout
Vin1 Vin4
Idsn, |Idsp|
VDD
Vin2 Vin3
Idsp
Vin3 Vin2 Vin Vout
Vin4 Vin1 Idsn
VDD
Vout
Vin0 Vin5
in5
Vin1 Vin4
dsn, |Idsp
Idsn dsp
|
Vin2 Vin3
Vin3 Vin2
Vin4 Vin1
in0
VDD
Vout
out
DD
Vin0 Vin1
VDD Vin2
Vin0 Vin5
A B
Vout
Vin1 Vin4
C
Vin2 Vin3
Vin3
Vin3 Vin2 D Vin4 Vin5
Vin4 Vin1 E
0 Vtn VDD/2 VDD+Vtp
VDD VDD
Vout Vin
Vin Vout
0
VDD
Vin
Vout
p/ n > 1
Vin Vout
VOL
Vin
0
Vtn VIL VIH VDD- VDD
|Vtp|
VDD
VDD-Vtn
Vs = |Vtp|
VDD VDD-2Vtn
VSS