1, 2. 4. 5. “> of valence band and conduction band. POKHARA UNIVERS Ty Semester: Fal} The figures in the Margin indicate full marks, Attempt alt the questions, a) Derive the Wave function for an el in the infinite © the lectron Confined in the infinit ») Define the term electrons drift Velocity and mobility. How are they® related? Show that the Conductivity of electrons with in metallic conductor 1S product of charge density and mobility, a) Show that ionic conduction in liquid decreases with increase in temperature and increases with increases in electric field, 5) What'are different 'ypes of polarization in dielectric medium? Explain orientational Polarization in detail, > materials, b) Derive. the expression for density state per unit volume and per unit “energy. =~ a) In intrinsic Semiconductor, Prove that the Fermi Level lies at the center i i o> 18 3, b) Avheavily doped p-side with acceptor concentration of 10"* cm? is : isbnascied to Gas with donor concentration of 10"* cm®. Calculate the built in potential and depletion width. Assume T=300K and n,=1.45 10cm? a) Derive the Ideal diode Equation for PN junction, : b) Calculate the resistance of pure silicon cubic crystal of 1 em? at room What wil is it is doped Il be the resistance of the cube when it is do wart ae in 10° Silicon atoms and | boron sami per billion silicon ain i ilicon is 5*10” cm°, intrinsic i ration of silicon is 5 : oa ston hag" 1O cart Assume the mobilities of electron and concentratit i= I. hole are 1350 and 450 cm?V"'s". ~a) Explain the ion implantation process with a neat sketch. b) A parallel plate capacitor has an area of 20cm? and a separation of 0.5 8 im. The space between the plates is filled with polyethylene. An alternative voltage with amplitude of 12V is applied at a frequency of 1.5 MHz. At this frequency, the real Part of the relative permittivity is 2.25 and the loss tangent is 4 10+. Calculate the energy dissipated per second. Write short notes on: (Any two) 2x @) Degenerate and Non-degenerate Semiconductor 5 >) Fermi Dirac distribution function / ¢) Diffusion and depletion layer capacitance pe nel ay hy - tes E37 jo** lo? TorPOKHARA UNIVERSITY Semester:Fall Year : 2020 Pull Marks: 100 Pass Marks: 45 Time: 3h. Level: Bachelor Programme: BIS Couuse: Electrical Engineering Materials, Candiclates are required to give their answers in their own words as far as practicable. ‘The figures in the margin indicate full marks. Attempt all the questions. a) The nommalized wave function for electron in infinite potential is we =G)"Sin 2, where symbols have their usual meaning, Find the expected value of position and momentum for the electron. by What do you mean by efgtive mass of an electron? Derive an expression m' =h'/(@' Ek’). 1a) What is tunneling in quantum mechanics? Explain with the necessary mathematical expression, the nature of wave function in different regions in case of tunneling. ') Describe ionic conduction in electrolyte and show that ionic conduction in electrolyte depends on femporature. a) What is polarization? Derive the Clausius ~Massetti equation for ionic polarization. b) Describe about Hysteresis loop. Differentiate between hard and soft riagnetic materials. ) Define intrinsic and extrinsic semiconductors. Deduce mass action law and derive i; = (ves) €xpCEy/2KoT)where symbols have their usual meanings. .d the resistance of a lem’ pure Silicon crystal. What is the resistance when the erystal is doped with one Arsenic in 10° Silicon ‘aloms? Given: Atomic concentration is Si is 5 x 10% cm”, m= 1.45 * 10" cm, y= 1350em? VS" and yy = 450 em°V'S". 2) A heavily doped p side with accepter concentration of 10"em” is connected to n ~side with donor concentration of 10" cm”, Calculate the built in potential, depletion width in n-side and pide , total depletion width and electric field at the junction, Relative permittivity ») 1, 9, K=1.38x10, e=1.6x10"% of material is 11 5 wlation between diffusion b) What i diffusion? Derive Linstei coefficient and mobility of electrons. 2) The enystal of sodium chloride has state dielectric constant of optical index of refinetion 1.5. 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Write the 345 advantages of ion implantation process over diffusion process, 7. Write short notes on: (Any two) 2x5 a) Compensation doping b) Dielectric breakdown ¢) Czochralski method of crystal growthPOKHARA UNIVERSITY + Spri Year 22017 eee Semester SmunB Full Mars: 100 Course: Electrical Engineering Materials Pass Marks: 45 Time : Shrs. Candidates are required to give their answers in their own words as far as practicable. The figures in the margin indicate full marks. Attempt all the questions. 1. a) Explain the Energy well model of metal and Show that the stationary wh? 8mL? b) If longest wavelength required photoelectric effect for a certain metal = 7 energy levels of the particle are given by E 0 is 2250A i. _ Find Work function of the metal ii. The velocity of electrons ejected from the metal surface if the ° same metal is radiated with 2 = 1800 A . iii, Kinetic energy of ejected electrons. 2. a) State Fick's law of diffusion. Derive Einstein's relationship between 8 mobility and diffusion coefficient. b) Explain how electrical conduction takes place in liquid ? 3. a) What is polarization? Show that “there will be no polarization if 8 ‘ eel”. b) Define local electric field. With the help of this obtain the expression — 7 for Clausius-Massotti equation, 4. a) Explain the domain structure and domain wall of magnetic material. b) What is magnetization, explain the types of magnetization? 8 5. a) What is minority carrier suppression? Prove electron concentration and conduction in n-type semiconductor is defined by donor impurity. b) A Si sample has been doped with 10!” arsenic atoms cm®, Calculate 6 the conductivity of sample at 27 °C and at 127 °C. Given, jte= 800 cm? VS" at 27°C, pe= 420 em? 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Using Schrédinger equation prove that the energy of an electron that is confined in an infinite potential well of width L is given by En=n’h?/8mL? where n, ™ and L have their usual meaning. b)- For an electron confined to an infinite potential well of width 0.1nm, determine the uncertainty in momentum and kinetic enerey: a) Show that the conductivity of electrons within metallic conductor is product of charge density and mobility. b) Calculate the mean free path and the mean free time between collisions of an electron having drift mobility 43em’v ‘stand mean speed 1.2x10°ms" 1) Explain with example the conduction process in electrolytes. b) Define the polarization. Show that “there will be no polarization if Eri". a) What is magnetism? Define and differentiate hard and soft magnetic material. b)- Explain the ferromagnetism on the basis of hysteresis loop. a) Show with necessary derivation that in intrinsic semiconductor, Fermi energy level lies in the middle of the band gap. b) Coloulsie the diffusion coefficient of electrons at 300K in n-type » silicon semiconductor doped with 10'° arsenic atoms per cm’. What are various n.ethods of diffusion? Explain ion implantation in detail.b) Derive the Einstein relationship for holes and free electron. 92 7. Write short notes on: (Any two) a) Ferro Flectricity b) Photolithography. c) Recombination of electron and holes, 2x5POKHARA UNIVERSITY Level: Bachelor Semester: Spring Programme: BE Course: Electrical Engineering Materials Candidates are required to give their answers # as practicable. The figures in the margin indicate, full marks. Attempt all the questions. n that is confined in an infinite a) Prove that the energy of an electro’ nth?/8mL? where L, ™ and n potential well of width Lis given by En=" have their usual meanings ( Use Schrodinger equation). b) The resistivity of copner at 20 degree centigrade is 0.69% 10% Q-m and 7 density of free electron is 8.5% 10%m?, Calculate the mean free time of electron in copper lattice. Assume m*=1.01 m, whe! a) What is Heisenberg’s uncertainty principle? Using this principle prove 8 that the minimum kinetic energy of a particle confined in an infinite potential well of width L is given by = h?/8mL? where h and m have their usual meanings. b) Define polarization. Show that “there will be no polatization if 7 e, =1". a) A parallel plate capacitor of area 20cm? and separation of Imm. The 8 space between plates is filled with Al,O3 when potential difference of 10 V is applied. Calculate field strength and dipole moment induced in oxide layer. Assume relative permittivity of AlO3 = 8 » ea how the iam occurs in liquid di-electrics. a) Explain with examples about parama; etism, dia i 5 a gn , diamagnetism and b) Explain the domain structure and domain walls of ferro in walls i 5 oe magnetic c) Electrons in undoped alli i ili aus ped gi m arsenide have 8 mobility of 8,800 5 8. e average time between collisions, Calculate distanc: travel between two collisions. Use average velocity of electron 10” ’ iroO com emis, a) Obtain the expression for contract potential KT Yo & Se tno q ni? b) The steady state excess hole concentration of AP = 10% at (x = 0) is injected to semi-infinite silicon bar of cross-section A = 10°$cm* If hole diffusion length L,=10° om and hole life time C=10* S. Then derive equation of excess hole distribution and calculate i, Steady state storage charge ii. Hole current I,(x=0). a) Define diffusion capacitance and depletion layer capacitance. b) For intrinsic semi conductor prove that Fermi level lies in middle of Bond gap. c) Sketch energy band diagram for forward bias and reversed bias P.N. junction and why reverse leakage current seems independent with reverse voltage for V. S Vrpo: Write short notes on: (Any Two) a) Epitaxial growth and ion implementation. b) Continuity equations. c) Magnitue dipole moment.