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Infineon IRF4905 DataSheet v01 01 en
Infineon IRF4905 DataSheet v01 01 en
Infineon IRF4905 DataSheet v01 01 en
IRF4905PbF
Advanced Process Technology HEXFET® Power MOSFET
Ultra Low On-Resistance D
Dynamic dv/dt Rating VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.02Ω
P-Channel G
Fully Avalanche Rated
ID = -74A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
11/6/03
IRF4905PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω VGS = -10V, ID = -38A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 21 ––– ––– S VDS = -25V, ID = -38A
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 180 ID = -38A
Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 18 ––– VDD = -28V
tr Rise Time ––– 99 ––– ID = -38A
ns
td(off) Turn-Off Delay Time ––– 61 ––– RG = 2.5Ω
tf Fall Time ––– 96 ––– RD = 0.72Ω, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
Notes:
Repetitive rating; pulse width limited by ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
Starting TJ = 25°C, L = 1.3mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -38A. (See Figure 12)
IRF4905PbF
1000 1000
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V
100 100
-4.5V
10 -4.5V 10
1000 2.0
I D = -64A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)
1.5
TJ = 25°C
100
TJ = 175°C
(Normalized)
1.0
10
0.5
VDS = -25V
20µs PULSE WIDTH VGS = -10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
7000 20
V GS = 0V, f = 1MHz I D = -38A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss
12
4000
Coss
3000
8
2000
Crss
4
1000
FOR TEST CIRCUIT
SEE FIGURE 13
0 A 0 A
1 10 100 0 40 80 120 160 200
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
1000 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ISD , Reverse Drain Current (A)
100 100
TJ = 175°C 100µs
TJ = 25°C
1ms
10 10
10ms
TC = 25°C
TJ = 175°C
VGS = 0V Single Pulse
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)
80 RD
VDS
VGS
D.U.T.
60 RG -
ID , Drain Current (A)
+ V DD
-10V
40 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf
VGS
0 10%
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC)
D = 0.50
0.20
0.1 0.10
PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
L 2500
VDS ID
1000
15V
0 A
25 50 75 100 125 150 175
I AS
Starting TJ , Junction Temperature (°C)
tp
V(BR)DSS
50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS
VGS
VG
-3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF4905PbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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