PD - 9.

1243B

PRELIMINARY IRF7309
HEXFET® Power MOSFET

Generation V Technology
Ultra Low On-Resistance N-CHANNEL MOSFET
1 8 N-Ch P-Ch
S1 D1
Dual N and P Channel Mosfet
2 7
Surface Mount G1 D1
VDSS 30V -30V
Available in Tape & Reel S2
3 6
D2
Dynamic dv/dt Rating 4 5
G2 D2
Fast Switching P-CHANNEL MOSFET RDS(on) 0.050Ω 0.10Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an SO-8
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 10V 4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.2 -2.4 A
IDM Pulsed Drain Current 16 -12 A
PD @TA = 25°C Power Dissipation (PCB Mount)** 1.4 W
Linear Derating Factor (PCB Mount)** 0.011 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)** –––– –––– 90 °C/W

** When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.
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IRF7309
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
N-Ch 30 — — VGS = 0V, ID = 250µA
V(BR)DSS Drain-to-Source Breakdown Voltage V
P-Ch -30 — — VGS = 0V, ID = -250µA
N-Ch — 0.032 — Reference to 25°C, ID = 1mA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V/°C
P-Ch — -0.037 — Reference to 25°C, ID = -1mA
— — 0.050 VGS = 10V, ID = 2.4A
N-Ch
— — 0.080 VGS = 4.5V, ID = 2.0A
RDS(ON) Static Drain-to-Source On-Resistance Ω
— — 0.10 VGS = -10V, ID = -1.8A
P-Ch
— — 0.16 VGS = -4.5V, ID = -1.5A
N-Ch 1.0 — — VDS = VGS, ID = 250µA
VGS(th) Gate Threshold Voltage V
P-Ch -1.0 — — VDS = VGS, ID = -250µA
N-Ch 5.2 — — VDS = 15V, ID = 2.4A
gfs Forward Transconductance S
P-Ch 2.5 — — VDS = -24V, ID = -1.8A
N-Ch — — 1.0 VDS = 24V, VGS = 0V
P-Ch — — -1.0 VDS = -24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA V = 24V, V = 0V, T = 125°C
N-Ch — — 25 DS GS J
P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V
N-Ch — — 25
Qg Total Gate Charge N-Channel
P-Ch — — 25
ID = 2.6A, VDS = 16V, VGS = 4.5V
N-Ch — — 2.9
Qgs Gate-to-Source Charge nC
P-Ch — — 2.9
P-Channel
N-Ch — — 7.9
Qgd Gate-to-Drain ("Miller") Charge ID = -2.2A, VDS = -16V, VGS = -4.5V
P-Ch — — 9.0
N-Ch — 6.8 —
td(on) Turn-On Delay Time N-Channel
P-Ch — 11 —
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
N-Ch — 21 —
tr Rise Time RD = 3.8Ω
P-Ch — 17 —
ns
N-Ch — 22 —
td(off) Turn-Off Delay Time P-Channel
P-Ch — 25 —
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
N-Ch — 7.7 —
tf Fall Time RD = 4.5Ω
P-Ch — 18 —
LD Internal Drain Inductace N-P — 4.0 — Between lead tip
nH
LS Internal Source Inductance N-P — 6.0 — and center of die contact
N-Ch — 520 —
Ciss Input Capacitance N-Channel
P-Ch — 440 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
N-Ch — 180 —
Coss Output Capacitance pF
P-Ch — 200 —
P-Channel
N-Ch — 72 —
Crss Reverse Transfer Capacitance VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch — 93 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.8
IS Continuous Source Current (Body Diode) P-Ch — — -1.8 A
N-Ch — — 16
ISM Pulsed Source Current (Body Diode) P-Ch — — -12
N-Ch — — 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V
VSD Diode Forward Voltage P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch — 47 71 ns N-Channel
trr Reverse Recovery Time P-Ch — 53 80 TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch — 56 84 nC P-Channel
Qrr Reverse Recovery Charge P-Ch — 66 99 TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
ton Forward Turn-On Time N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.

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 IRF7309
N-Channel

1000 1000 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , Drain-to-Source Current (A)

I , Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100 100

4.5V 4.5V
10 10

D
D

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C TJ = 150°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,

TJ = 25oC TJ = 150oC

100 2.0
I D = 4.0A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 25°C 1.5

TJ = 150°C
(Normalized)

1.0

0.5

VDS = 15V
20µs PULSE WIDTH VGS = 10V
10 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF7309
N-Channel

1000 20
V GS = 0V, f = 1MHz I D = 2.4A
C iss = C gs + C gd , Cds SHORTED VDS = 24V
C rss = C gd

VGS , Gate-to-Source Voltage (V)

C oss = C ds + C gd
800 16
C, Capacitance (pF)

Ciss
600 12

Coss
400 8

200 Crss 4

FOR TEST CIRCUIT

SEE FIGURE 11
0 A 0 A
1 10 100 0 5 10 15 20 25
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to- Fig 6. Typical Gate Charge Vs.
Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

10 10 100µs

TJ = 150°C 1ms
TJ = 25°C

10ms
1 1

100ms
TA = 25°C
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100

VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage Fig 8. Maximum Safe Operating Area

150
 IRF7309
N-Channel
4.0
ID, Drain Current (Amps)

3.0

2.0

Fig 10a. Switching Time Test Circuit

1.0

0.0 A
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 9. Max. Drain Current Vs. Ambient Temp.

Fig 10b. Switching Time Waveforms

Fig 11a. Gate Charge Test Circuit Fig 11b. Basic Gate Charge Waveform

P-Channel
100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
-ID , Drain-to-Source Current (A)

- 7.0V
-I D , Drain-to-Source Current (A)

- 7.0V
- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V

10 -4.5V 10
-4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C TJ = 150°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics, TJ = 25oC Fig 13. Typical Output Characteristics,TJ = 150oC

151
IRF7309
P-Channel

100 2.0
I D = -3.0A

R DS(on) , Drain-to-Source On Resistance

-I D , Drain-to-Source Current (A)

TJ = 25°C
1.5
TJ = 150°C

(Normalized)
10 1.0

0.5

VDS = -15V
20µs PULSE WIDTH VGS = -10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160

-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 14. Typical Transfer Characteristics Fig 15. Normalized On-Resistance

Vs. Temperature

1000 20
V GS = 0V, f = 1MHz ID = -3.0A
C iss = Cgs + C gd , Cds SHORTED VDS = -24V
-VGS , Gate-to-Source Voltage (V)

C rss = C gd
800 C oss = Cds + C gd 16
C, Capacitance (pF)

600 Ciss 12

Coss
400 8

200 Crss 4

FOR TEST CIRCUIT

SEE FIGURE 22
0 A 0 A
1 10 100 0 5 10 15 20 25
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
Fig 16. Typical Capacitance Vs. Drain-to- Fig 17. Typical Gate Charge Vs. Gate-to-
Source Voltage Source Voltage

152
 IRF7309
P-Channel

100 100
OPERATION IN THIS AREA LIMITED
-ISD , Reverse Drain Current (A)

BY R DS(on)

-I D , Drain Current (A)

10 10 100µs

TJ = 150°C
1ms

TJ = 25°C
1 1 10ms

100ms
TA = 25°C
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 100

-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 18. Typical Source-Drain Diode Forward

Voltage Fig 19. Maximum Safe Operating Area

3.0
-ID, Drain Current (Amps)

2.0

Fig 21a. Switching Time Test Circuit

1.0

0.0 A
25 50 75 100 125 150

TA , AmbientTemperature (°C)

Fig 20. Max.Drain Current Vs. Ambient Temp.

Fig 21b. Switching Time Waveforms

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IRF7309
P-Channel

Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform

N- and P-Channel
100

D = 0.50
Thermal Response (Z thJA )

0.20

10 0.10

0.05

0.02
PDM

1 0.01
t
1
SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1 2
2. Peak T =JP xZ
DM +thJA
T A
0.1 A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t 1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Refer to the Appendix Section for the following:

Appendix A: Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Appendix B: Package Outline Mechanical Drawing — See page 332.
Appendix C: Part Marking Information — See page 332.
Appendix D: Tape and Reel Information — See page 336.
154