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BQ 32002
BQ 32002
BQ32002
SLUSA96B – AUGUST 2010 – REVISED APRIL 2016
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
BQ32002 SOIC (8) 4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
VCC BQ32002
VCC SCL
Controller
VBACK Automatic
Backup
Switch
SDA Real-Time
VCORE 4.7 kW 4.7 kW 4.7 kW ____ Clock
IRQ
IRQ
Interrupt
OSCI Generator
GND
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ32002
SLUSA96B – AUGUST 2010 – REVISED APRIL 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 10
2 Applications ........................................................... 1 7.5 Programming........................................................... 10
3 Description ............................................................. 1 7.6 Register Maps ......................................................... 12
4 Revision History..................................................... 2 8 Application and Implementation ........................ 19
8.1 Application Information............................................ 19
5 Pin Configuration and Functions ......................... 3
8.2 Typical Application .................................................. 19
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ..................................... 4 9 Power Supply Recommendations...................... 21
6.2 ESD Ratings.............................................................. 4 10 Layout................................................................... 21
6.3 Recommended Operating Conditions....................... 4 10.1 Layout Guidelines ................................................. 21
6.4 Thermal Information .................................................. 4 10.2 Layout Example .................................................... 21
6.5 Electrical Characteristics........................................... 5 11 Device and Documentation Support ................. 22
6.6 Timing Requirements ................................................ 6 11.1 Community Resources.......................................... 22
6.7 Typical Characteristics .............................................. 6 11.2 Trademarks ........................................................... 22
7 Detailed Description .............................................. 7 11.3 Electrostatic Discharge Caution ............................ 22
7.1 Overview ................................................................... 7 11.4 Glossary ................................................................ 22
7.2 Functional Block Diagram ......................................... 7 12 Mechanical, Packaging, and Orderable
7.3 Feature Description................................................... 7 Information ........................................................... 22
4 Revision History
Changes from Revision A (December 2010) to Revision B Page
• Added Pin Configuration and Functions section, ESD Ratings section, Thermal Information section, Detailed
Description section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................ 1
• Deleted Trickle Charge Pump from Functional Block Diagram/Application Circuit ............................................................... 1
• Changed Crystal series resistance maximum from 40 kΩ to 70 kΩ in Recommended Operating Conditions ...................... 4
• Added Recommended Operating Conditions table note (1) Crystal load capacitance ±10% is allowed. ............................. 4
D Package
8-Pin SOIC
Top View
OSCI 1 8 VCC
OSCO 2 7 IRQ
VBACK 3 6 SCL
GND 4 5 SDA
Pin Functions
PIN
TYPE DESCRIPTION
NAME NO.
POWER AND GROUND
VCC 8 — Main device power
GND 4 — Ground
VBACK 3 — Backup device power
SERIAL INTERFACE
SCL 6 I I2C serial interface clock
SDA 5 I/O I2C serial data
INTERRUPT
IRQ 7 O Configurable interrupt output. Open-drain output.
OSCILLATOR
OSCI 1 — Oscillator input
OSCO 2 — Oscillator output
6 Specifications
6.1 Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC to GND –0.3 4
VIN Input voltage V
All other pins to GND –0.3 VCC + 0.3
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature after reflow –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(1) The backup supply current is measured only after an initial power up. The device behavior is not ensured before the first power up.
(2) Typical accuracy is measured using reference board design and KDS DMX-26S surface-mount 32.768-kHz crystal. Variation in board
design and crystal section results in different typical accuracy.
50 100 20
Icc (uA) 107.5
VCC = 2 V 90 VCC = 3.3 V
Iback (uA)
45 80 15
70 106
40 10
60
Iback (uA)
Iback (uA)
ICC (uA)
ICC (uA)
50 104.5
35 5
40
30 103
30 0
20
25 10 101.5 -5
Icc (uA)
0
Iback (uA)
20 -10 100 -10
0.5 1.0 1.5 2.0 2.5 3.0 2.4 2.9 3.4 3.9
Vbackup (V) C001 Vbackup (V) C002
Figure 1. Current Consumption vs Backup Supply Voltage Figure 2. Current Consumption vs Backup Supply Voltage
7 Detailed Description
7.1 Overview
The BQ32002 is a real-time clock that features an automatic backup supply with integrated oscillator-fail
detection.
VCC
Place supply-decoupling
capacitor near supply pin 1 µF
VCC
VBACK Automatic
Use only Backup
super-capacitor Switch VCC
.22 F
or battery, not
both
VCORE
4.7 NŸ 4.7 NŸ 4.7 NŸ
Interrupt IRQ
Generator
OSCI
Registers
GND
3.3V 3.3V
VB AC K VB AC K
VR E F VR E F
VCC
VC C
Voltage
Voltage
–5 V/ms (max)
T ime Time
On VC C On V BAC K On V BAC K On V C C
3.3V 3.3V
VR E F VR E F
VB AC K VB AC K
VCC VCC
Voltage
Voltage
–5 V/ms (max)
T ime Time
On VC C On V BAC K On V BAC K On V C C
7.5 Programming
7.5.1 I2C Serial Interface
The I2C interface allows control and monitoring of the RTC by a microcontroller. I2C is a two-wire serial interface
developed by Philips Semiconductor (see I2C-Bus Specification, Version 2.1, January 2000).
The bus consists of a data line (SDA) and a clock line (SCL) with off-chip pullup resistors. When the bus is idle,
both SDA and SCL lines are pulled high.
A master device, usually a microcontroller or a digital signal processor, controls the bus. The master is
responsible for generating the SCL signal and device addresses. The master also generates specific conditions
that indicate the START and STOP of data transfer.
A slave device receives and/or transmits data on the bus under control of the master device. This device
operates only as a slave device.
I2C communication is initiated by a master sending a start condition, a high-to-low transition on the SDA I/O while
SCL is held high. After the start condition, the device address byte is sent, most-significant bit (MSB) first,
including the data direction bit (R/W). After receiving a valid address byte, this device responds with an
acknowledge, a low on the SDA I/O during the high of the acknowledge-related clock pulse. This device
responds to the I2C slave address 11010000b for write commands and slave address 11010001b for read
commands.
This device does not respond to the general call address.
A data byte follows the address acknowledge. If the R/W bit is low, the data is written from the master. If the R/W
bit is high, the data from this device are the values read from the register previously selected by a write to the
subaddress register. The data byte is followed by an acknowledge sent from this device. Data is output only if
complete bytes are received and acknowledged.
A stop condition, which is a low-to-high transition on the SDA I/O while the SCL input is high, is sent by the
master to terminate the transfer. A master device must wait at least 60 μs after the RTC exits backup mode to
generate a START condition.
Programming (continued)
0.7 VCC
SDA
0.3 VCC
tscl
tsth 1/fscl
Stop Condition
tvd tbuf
0.7 VCC
SDA D7/A
0.3 VCC
Start Condition
tsds
0.7 VCC
SCL 8 9
0.3 VCC
tsps
1 1 1 1 1 1 R
S (AN) S (DN) (DN+1)
0 0 0 0W 0 0 0 0
DataN+1
NACK
START
START
STOP
Slave Sub Slave DataN
ACK
ACK
ACK
ACK
(1) 10_DATE and 1_DATE must form a valid date, 01 to 31, dependent on month and year.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
OSCI V CC
32.768 kHz 1 µF
4.7 kΩ 4.7 kΩ 4.7 kΩ
OSCO
V BACK IRQ
SCL
GND SDA
Figure 9. Master and Slave I2C Communication for the Figure 10. Master and Slave I2C Communication for the
SECONDS Register SECONDS Register After Recovering from the Backup
Supply
10 Layout
1 µF
VCC
4.7 kΩ
4.7 kΩ
4.7 kΩ
OSCI
____
OSCO IRQ
0.22F
VBACK SCL
GND SDA
11.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 21-Aug-2014
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 21-Aug-2014
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Aug-2014
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Aug-2014
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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