MDD95-18N1B

Standard Rectifier Module VRRM = 2x 1800 V

I FAV = 120 A
VF = 1.13 V

Phase leg

Part number

MDD95-18N1B

Backside: isolated

2 1 3

Features / Advantages: Applications: Package: TO-240AA

● Package with DCB ceramic ● Diode for main rectification ● Isolation Voltage: 4800 V~
● Improved temperature and power cycling ● For single and three phase ● Industry standard outline
● Planar passivated chips bridge configurations ● RoHS compliant
● Very low forward voltage drop ● Supplies for DC power equipment ● Height: 30 mm
● Very low leakage current ● Input rectifiers for PWM inverter ● Base plate: DCB ceramic
● Battery DC power supplies ● Reduced weight
● Field supply for DC motors ● Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MDD95-18N1B

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 1900 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 V
IR reverse current VR = 1800 V TVJ = 25°C 200 µA
VR = 1800 V TVJ = 150°C 15 mA
VF forward voltage drop I F = 150 A TVJ = 25°C 1.20 V
I F = 300 A 1.43 V
I F = 150 A TVJ = 125 °C 1.13 V
I F = 300 A 1.46 V
I FAV average forward current TC = 100 °C T VJ = 150 °C 120 A
I F(RMS) RMS forward current 180° sine 180 A
VF0 threshold voltage TVJ = 150 °C 0.75 V
for power loss calculation only
rF slope resistance 1.95 mΩ
R thJC thermal resistance junction to case 0.26 K/W
R thCH thermal resistance case to heatsink 0.2 K/W
Ptot total power dissipation TC = 25°C 481 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 2.80 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA
t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.38 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 39.2 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 38.1 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 28.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 27.5 kA²s
CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C 116 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MDD95-18N1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 125 °C
Weight 76 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 4800 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 4000 V

UL
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Date Code +
Location Circuit
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XXXXXXXX 2D Barcode
123456

Part Number Lot#

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MDD95-18N1B MDD95-18N1B Box 36 454427

Similar Part Package Voltage class

MDD95-08N1B TO-240AA 800
MDD95-12N1B TO-240AA 1200
MDD95-14N1B TO-240AA 1400
MDD95-16N1B TO-240AA 1600

Equivalent Circuits for Simulation * on die level T VJ = 150°C

I V0 R0 Rectifier

V 0 max threshold voltage 0.75 V

R0 max slope resistance * 0.76 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MDD95-18N1B

Outlines TO-240AA

2 1 3

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MDD95-18N1B

Rectifier
3000 105 250
VR = 0 V DC
50 Hz, 80% V RRM 180° sin
2500 120°
200 60°
30°

2000
150
I2t
IFSM TVJ = 45°C
1500 TVJ = 45°C IFAVM
[A]
[A2s] 100

1000 [A]
TVJ = 150°C
TVJ = 150°C
50
500

0 104 0
10-3 10-2 10-1 100 101 1 2 3 6 8 10 0 50 100 150 200

t [s] t [ms] TC [°C]

Fig. 1 Surge overload current Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature

200
RthJA [K/W]
0.4

0.6
150
0.8

PT 1.2
100
1.5
[W]
2
DC
3
180° sin
50
120°
60°
30°

0
0 50 100 150 0 50 100 150 200
ITAVM, IFAVM [A] TA [°C]

Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)

800
RthKA [K/W]
0.1

0.15
600
0.2
R L
0.3
Ptot
0.4
400
0.5
[W]
0.6

0.7
Circuit
200
B2
2x MDD95

0
0 50 100 150 200 250 0 50 100 150 200
IdAVM [A] TA [°C]

Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MDD95-18N1B

Rectifier
1000
RthJA [KW]
0.03

800 0.06

0.08

0.12
Ptot 600
0.15

0.3
[W] 400 0.5
Circuit
B6
3x MDD95
200

0
0 100 200 300 0 50 100 150 200
IDAVM [A] TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature

0.4
RthJC for various conduction angles d:
30° d RthJC [K/W]
60°
DC 0.26
120°
0.3
180° 0.28
180°
DC 120° 0.30
ZthJC
60° 0.34
0.2 30° 0.38
[K/W]
Constants for ZthJC calculation:
i Rthi [K/W] ti [s]
0.1
1 0.013 0.0012
2 0.072 0.0470
3 0.175 0.3940
0
10-3 10-2 10-1 100 101 102 103
t [s]
Fig. 7 Transient thermal impedance junction to case (per diode)

0.6 RthJK for various conduction angles d:

30°
d RthJK [K/W]
0.5 60° DC 0.46
120° 180° 0.48
0.4
180° 120° 0.50
DC 60° 0.54
ZthJK
30° 0.58
0.3

[K/W] Constants for ZthJK calculation:

0.2 i Rthi [K/W] ti [s]
1 0.013 0.0012
0.1 2 0.072 0.0470
3 0.175 0.3940
0
4 0.200 1.3200
10-3 10-2 10-1 100 101 102 103 104

t [s]
Fig. 8 Transient thermal impedance junction to heatsink (per thyristor)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved