BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani

Pilani Campus
Instruction Division

BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, PILANI

INSTRUCTION DIVISION
FIRST SEMESTER 2017-2018

Course Handout (Part - II)

Date: 02/08/2017
In addition to part I (General Handout for all courses appended to the time table) this portion gives further
specific details regarding course.

Course No. : MEL G631

Course Title : Physics and Modeling of Microelectronic Devices
Instructor-in-charge : NAVNEET GUPTA
(ngupta@pilani.bits-pilani.ac.in)

1. Course Description (as per Bulletin):

Physics and properties of semiconductor-a review; pn junction diode; bipolar transistor; metal-semiconductor
contacts; JFET and MESFET; MOSFET and scaling; CCD and photonic devices

2. Scope and Objective:

This course is designed to provide the basic physical concepts behind microelectronic devices and imparts
modeling information about these devices for their use as circuit elements in integrated circuits. This course will
also provide the ability to deal with advanced concepts in microelectronic devices.

3. Text Book (Prescribed):

TB: R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd ed. Wiley, New York

4. Reference Books:
R1. Chenming Calvin Hu, “Modern Semiconductor Devices for Integrated Circuits”, Pearson Education.
R2. Donald A. Neaman and D. Biswas, “Semiconductor Physics and Devices”, 4th ed., Tata Mc Graw Hill.

5. Course Plan:
Modules Lec. No. Topics to be Covered References Learning Outcome
Semiconductor 1-2 Basics of Semiconductors, Band TB: 1.1 Student should
Electronics and Bond model of solids R1: 1.2-1.5 identify the key
Thermal-equilibrium statistics, TB: 1.1 parameters that
3
photogeneration and Quasi-Fermi R1: 1.6-1.10 affect the
levels conduction &
transport of
4-5 Free Carriers in semiconductors, TB: 1.2
carriers in
scattering, velocity saturation R1: Ch-2
semiconductors
Metal-Semiconductor 6-7 Equilibrium in electronic systems, TB: 3.1, 3.2 Understanding the
Contacts idealized metal semiconductor R1: Ch-4 (part-III) growing
junctions: Band diagram. importance to the
8-9 C-V Characteristics: Schottky TB: 3.3, 3.4 design of high-
contacts and ohmic contacts. performance

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 BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani
Pilani Campus
Instruction Division

10 Surface Effects on semiconductor TB: 3.5 transistors

contacts, depletion layer model
pn Junctions and 11-13 Graded impurity distributions, TB: 4.1, 4.2 To understand the
junction devices Quasi-Neutrality Approximation; R1: 4.1, 4.2 concepts of the
depletion layer model depletion region
14-15 pn junction under bias: Depletion TB: 4.3 & 4.4 and minority
width, field & breakdown carrier injection
16 pn junction Devices: JFET & MESFET TB: 4.5
R1: 4.3-4.6
Currents in pn 17-19 Continuity equation, generation TB: 5.1 & 5.2 To know the
junctions and recombination R1: 4.7-4.9 concepts of
20-21 Current-Voltage Characteristics of TB: 5.3 generation and
pn junction recombination
22 Device modeling and Simulation TB: 5.5 applied to pn
junctions under
forward bias
Bipolar Transistor: 23 Transistor Action TB: 6.1 To understand the
Device Modeling-I 24 Transistor under active bias TB: 6.2 modeling of bipolar
25-26 Transistor switching and Ebers-Moll TB: 6.3 & 6.4 transistor and to
Model R1: 8.6 know the
Bipolar Transistor: 27-28 Limitations and Modeling: Early TB: 7.1 & 7.4 integrated-charge
Device Modeling-II effect & Charge control model R1: 8.10 model
Properties of the MOS 29-31 MOS structure, energy band TB: 8.1 & 8.2 To understand the
system diagrams in Equilibrium / under R1: 5.1, 5.2 concept underlying
bias conditions the flat-band and
32-33 MOS Electronics: Equilibrium & TB: 8.3 threshold voltages
non-equilibrium analysis of MOS devices
34-35 MOS Capacitance; Non-ideal MOS TB: 8.4-8.5 and to know the
system: Oxide charges in MOS R1: 5.6-5.9 concept of MOSFET
36 Charge-coupled devices (CCD) TB: 8.7, R1: 5.10 scaling to
understand
MOS Transistor 37-38 Basic MOSFET Behavior and TB: 9.1 & 9.2 advanced CMOS
improved models for short channel R1: 6.6 devices.
MOSFETs
39-40 Electric fields in the velocity- TB: Ch-10
saturation region and HCE R1: 6.8

6. Evaluation Scheme:
Component Duration Marks Weightage Date & Time Nature of Component
(200)
Mid-Term Test 90 mins. 70 35% 11/10 4:00 - Closed book
5:30 PM
Assignments, (Take-home - 20 10% Open book
and Simulation based)
Seminars* 20 mins 15 7.5% Open book
Quizzes 10 mins 15 7.5% During class Closed book

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 BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani
Pilani Campus
Instruction Division

Comprehensive 3 hrs. 80 40% 7/12 AN (25%) Open + (15%)

Examination Closed Book

*Seminars will be based on the following topics (students in a group of two have to choose a topic):

1. Display Devices
2. Flexible Electronics
3. Compound Semiconductor Devices
4. Graphene, 2D Materials and Organic Semiconductors
5. Photonic Devices
6. FinFET-Multigate MOSFET
7. New technology node-cost, scaling and power consumption
8. Molecular electronics
9. High-k dielectrics in Electronic Devices: Need and challenges

[Learning Outcomes: Students will get to know about the recent advancement in the area of modeling and
applications of electronic devices]

7. Chamber Consultation Hour: To be announced in class.

8. Notices: Notices for the course will be displayed on the EEE Notice Board and NALANDA.

9. Make-up Policy: Make-up will be allowed for genuine cases. Prior application should be sent for seeking the
same.

Instructor-in-charge
MEL G631

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