MODEL QUESTION SET

NANO ELECTRONICS [PE-EC505A]

ECE (5TH SEMESTER)

EASY TYPES

Chapter-1/MCQ [1 MARK]
1. Nanomaterials are the materials with at least one dimension measuring less than

c) 100 nm

2. According to classical mechanics, which law(s) apply or applies to the behavior of

macroscopic particles?

a) Newton's three laws

3. Schrodinger Wave equation can be derived from

a) Principles of Quantum Mechanics

4. A material with one dimension in Nano range and the other two dimensions are large
is called
a) Quantum wire
5. Which region of the electromagnetic spectrum will provide photons of the least
energy?
a) radio waves
6. Richard Feynman is often credited with predicting the potential of nanotechnology.
What was the title of his famous speech given on December 29, 1959?

a) There is plenty of room at the bottom

7. What is a Brillouin zone?

a) A region of k-space that contains all of the unique solutions of the wave equation

8. What two particles interact in Compton scattering?

a) photon and electron

 Chapter-2/MCQ [1 MARK]

9. What type of MOSFET whose channel is originally thick but narrows as the proper
gate bias is applied?
(a) Depletion

10. The amount of voltage needed at the gate-source terminal for an enhancement type
MOSFET so that a channel can be formed for the current to flow.
(a) Threshold voltage

11. In enhancement MOSFET, the magnitude of output current due to an

increase in the magnitude of gate potentials.

(a) Increases

12. The effective channel length of a MOSFET in saturation decreases with increase in

(a) Drain voltage

13. The basic advantage of the CMOS technology is that

a) It has lower power consumption

14. Which type of MOSFET exhibits no current at zero gate voltage?

(a) Depletion MOSFET

15. As the voltage on the drain is increased, a value is reached at which the pn junction
between the drain region and substrate suffers avalanche breakdown known as
a) Strong avalanche

16. For short channel devices, threshold voltage for high drain bias
conditions.
a) initially increase, then decrease for high bias conditions

17. FinFET was developed to overcome the

(a) Short-channel effect

18. The main disadvantage of constant field scaling is

a) Power delay product per circuit dramatically deteriorates

Chapter-3/MCQ [1 MARK]

19. Tunnel diode has a very fast operation in

a) microwave frequency region

20. The turnstile operation is advantageous over pump operation mode in a SET device,
because
a) It allows tunneling of two electrons

21. The kinetic energy of electrons in monolayer Graphene is proportional to

(a) The square value of wave vector, k2

22. What does the “chirality” (n, m) denote for carbon nanotubes (CNTs)?

(a) A direction that the graphene sheet is rolled up to form a tube

23. CNTs are capped on both ends with which carbon nanostructure?
a) C60

24. Single electron transistor is based on

a) coulomb blockade effect

MODERATE TYPES

Chapter-1/MCQ [1 MARK]
1. A material with one dimension in Nano range and the other two dimensions are large
is called
a) Quantum wire

2. For a quantum wave particle, E =

a) ℏ k/2

3. The DOS function of which of the following is independent of energy

c) Q. Dot

4. The square of the magnitude of the wave function is called

a) Probability density
Chapter-2/MCQ [1 MARK]
5. In constant field scaling, power dissipation per circuit is scaled by a factor (k <1)
a) 1/k2
6. Constant voltage scaling is applied to a MOSFET with a scaling factor of k = 5. As the
MOSFET features are scaled down, the current in the MOSFET
(a) Increases by a factor of 5 (if saturation is reached)
(b) Decreases by a factor of 5 (if triode or linearity is reached)

7. FinFET generally used to design

(a) Processor

8. transistor is affected by static electricity

(a) MOSFET
9. The threshold voltage is
a) Decreases on increasing temperature

10. Short channel effects on threshold voltage become significant when channel length
(approx.)
a) < 0.1µm

Chapter-3/MCQ [1 MARK]
11. The depletion layer of tunnel diode is very small because
a) tunneling effect

12. SET device can serve as the

a) Electric-current standard

13. Frequency of Single-electron tunneling (or Bloch) oscillations is given by

a) fSET = 2I/e

14. Exfoliation” is a method to make Graphene by

(a) Lifting off graphene layers from a large graphite crystal

Chapter-1/MCQ [1 MARK]
1. Solving the wave equation for a given periodic potential, u( x) , can be challenging. In
the lecture and in ASF, a periodic system of finite, rectangular quantum wells is
solved. Even for this simple problem, the math is non-trivial, but the solutions display
the general features of all periodic crystal potentials. What is the name of this classic,
model problem for band-structure?

d) The Kronig-Penney Model

 2. Quantum well can be fabricated by

a) By sandwiching a wide Bandgap material between low Bandgap materials

3. When the Schrodinger equation is solved for E > Vo, the solutions will be

a) Oscillatory inside as well as outside

Chapter-2/MCQ [1 MARK]
4. A MOSFET that incorporates more than one gate into a single device is termed as

(a) MuGFET

5. What is threshold voltage “roll-off”?

(a) A reduction in the magnitude of the threshold voltage as the channel length decreases
(b) An effect caused by 2-D MOS electrostatics
(c) A reduction of gate control over the channel potential
(d) All of the above

6. MOSFET breakdown problem can be relieved to some extent by using a

a) Lightly doped Drain (LDD)

7. The Snapback effect can be minimized by using a

a) Heavily doped drain

Chapter-3/MCQ [1 MARK]
8. For most optimized and perfect double-barrier resonant tunneling structures, a peak-
to-valley ratio of about may be achieved at room temperature.
a) 50 or even higher

9. For heterostructures of type-II, Quantum Wells are formed

a) Both for electrons and for holes

10. VI characteristics in a Coulomb blockade

a) don’t follow Ohm’s law

Chapter-1/ [5 MARKS]
1. Find the DOS function for quantum well (2D).

2. A particle with mass 5 X10 −31 kg has a de Broglie wavelength of 180 Å. Determine
the momentum of the particle.
3. Calculate the photon energy corresponding to a particular wavelength λ=0.708X10-8
cm.

4. Draw E-k diagram, hence explain the concept of band-gap and Brillouin zone.
 Here's a basic description of an E-K diagram for semiconductors:
1. Valence Band: The lower energy band where electrons are typically bound to atoms.
Electrons in this band have low momentum and are not free to move easily.
2. Conduction Band: The higher energy band where electrons can move freely and
participate in conduction. Electrons in this band have higher momentum.
3. Band Gap: The energy gap between the valence band and the conduction band. This
represents the energy range that electrons cannot occupy within the material unless
provided with sufficient energy to jump across it (e.g., through thermal excitation or
optical excitation). In an E-K diagram, the band gap appears as a vertical energy
discontinuity between the valence and conduction bands.
4. Fermi Level (Ef): The energy level at which the probability of finding an electron is 0.5
at absolute zero temperature. In semiconductors, the position of the Fermi level with
respect to the energy bands determines whether the material behaves as an n-type
semiconductor (Fermi level closer to the conduction band) or a p-type semiconductor
(Fermi level closer to the valence band).
5. Momentum Range: The horizontal axis of the diagram represents the momentum or
wavevector (k) of the electrons. In a semiconductor, the momentum range may vary
depending on factors such as crystal structure and doping.

The Brillouin zone is a concept in solid-state physics, specifically in the study of

crystalline materials. It is a region in the reciprocal space (k-space) that represents all
possible wavevectors (momenta) for electrons or quasiparticles in a crystal lattice. The
Brillouin zone is named after Léon Brillouin, a French physicist who made significant
contributions to the theory of solids.
Here's a more detailed explanation:

Reciprocal Space: In solid-state physics, reciprocal space (k-space) is the space whose
coordinates are related to the wavevector (k) of particles, such as electrons or photons,
in a crystal lattice. Unlike ordinary space (real space), which represents positions of
atoms in a crystal, reciprocal space represents the periodicity of the crystal lattice.

Wavevectors: In quantum mechanics, wavevectors represent the momentum of particles.

In the context of crystals, electrons behave as waves due to the periodic arrangement of
atoms in the crystal lattice. The wavevector (k) characterizes the momentum of these
 electron waves.

Brillouin Zone: The Brillouin zone is defined as the Wigner-Seitz cell of the reciprocal
lattice. It is the smallest repeating unit in reciprocal space that completely describes the
periodicity of the crystal lattice. The Brillouin zone plays a crucial role in
understanding the electronic properties of materials, such as their band structure and
conductivity.

First Brillouin Zone: The first Brillouin zone is the region in reciprocal space bounded by
planes perpendicular to the reciprocal lattice vectors, and it contains the origin (k=0). It
is also referred to as the fundamental cell or the first zone of Brillouin. The first
Brillouin zone is often depicted as a polyhedron or a specific shape depending on the
crystal structure (e.g., cubic, hexagonal).

5. Derive and explain Schrödinger wave equation and brief its uses.

6. An electron travelling at a velocity of 107 cm/s. Assume the velocity increases by a

value of 1 cm/s. Determine the increase in kinetic energy.
7. The uncertainty in position of an electron is 8 Å. Determine the minimum uncertainly
in momentum

8. Discuss “Top down” and “Bottom up” approaches of nanotechnology. Why is nano
electronics needed?

"Top-down" and "bottom-up" approaches are two different methodologies used in

nanotechnology for fabricating nanoscale structures and devices.

1. **Top-Down Approach**:
- In the top-down approach, larger structures are reduced in size to create nanoscale
structures. This method involves carving or etching away bulk material to create smaller
features.
- Examples of top-down techniques include lithography, electron beam lithography, and
focused ion beam milling.
- Top-down approaches are akin to sculpting, where material is removed until the desired
structure is achieved.
- These methods are often used in semiconductor industry for manufacturing integrated
circuits, MEMS (Micro-Electro-Mechanical Systems), and nano-electromechanical systems
(NEMS).
2. **Bottom-Up Approach**:
- In contrast to the top-down approach, the bottom-up approach builds structures from
individual atoms or molecules, gradually assembling them into larger structures.
- Examples of bottom-up techniques include chemical vapor deposition, molecular beam
epitaxy, and self-assembly techniques.
- Bottom-up approaches rely on the inherent properties of materials to self-organize or
assemble into desired structures.
- These methods are inspired by biological processes and are often used in fields like
nanomaterials synthesis, molecular electronics, and drug delivery systems.

Now, let's discuss why nano electronics is needed:

• **Miniaturization**: Nano electronics allows for the miniaturization of electronic

components, leading to smaller, lighter, and more efficient devices. This is crucial for
portable electronics, wearable devices, and integrated circuits.

• **Increased Performance**: By operating at the nanoscale, electronic devices can

achieve higher performance in terms of speed, power efficiency, and functionality. This
enables advancements in computing, communication, and sensing technologies.

• **New Properties**: Nanoscale materials exhibit unique physical and chemical

properties that are not present in bulk materials. Nano electronics explores these novel
properties to develop innovative devices with enhanced functionality, such as quantum
dots for displays and nanowires for sensors.

• **Energy Efficiency**: Nano electronics can enable the development of energy-

efficient devices by reducing power consumption and improving energy conversion
processes. This is important for sustainable technologies and addressing energy
challenges.

• **Emerging Applications**: Nano electronics opens up new possibilities for

applications such as nanomedicine (e.g., targeted drug delivery and diagnostics),
nanorobotics, and quantum computing, which have the potential to revolutionize various
industries and improve quality of life.
9. When we call a semiconductor as bulk, quantum well, quantum wire, quantum
dot or nano particle? Discuss in terms of density of states, electronic properties,
energy level structure.
When referring to a semiconductor as bulk, quantum well, quantum wire,
quantum dot, or nanoparticle, we are describing different dimensionalities of the
semiconductor material, which have distinct density of states, electronic
properties, and energy level structures. Let's discuss each one:

1. **Bulk Semiconductor**:
- In a bulk semiconductor, the material is three-dimensionally extended,
meaning it has macroscopic dimensions.
- Density of states: In bulk semiconductors, the density of states is continuous
and exhibits band structure with distinct valence and conduction bands separated
by a band gap.
 - Electronic properties: Bulk semiconductors behave like classical materials
with macroscopic electronic properties such as conductivity, mobility, and
resistivity.
- Energy level structure: The energy level structure consists of valence and
conduction bands, and the Fermi level lies within the band gap for intrinsic
semiconductors.

2. **Quantum Well**:
- A quantum well is a thin layer of semiconductor material sandwiched
between two layers of a different material with a wider band gap.
- Density of states: Quantum wells exhibit quantization of energy levels in the
direction perpendicular to the layers, leading to discrete energy levels.
- Electronic properties: Quantum wells have enhanced carrier confinement in
one dimension, leading to modified electronic properties such as increased
carrier mobility and optical properties.
- Energy level structure: Quantum wells have discrete energy levels within the
confined region, forming sub-bands within the conduction and valence bands.

3. **Quantum Wire**:
- A quantum wire is a semiconductor structure with one dimension much
smaller than the other two dimensions.
- Density of states: Quantum wires exhibit quantization of energy levels in two
dimensions, resulting in discrete energy levels.
- Electronic properties: Quantum wires have enhanced carrier confinement in
two dimensions, leading to unique electronic and optical properties such as
quantum confinement effects and wavefunction engineering.
- Energy level structure: Quantum wires have discrete energy levels within the
confined region, similar to quantum wells but with stronger quantization effects.

4. **Quantum Dot**:
- A quantum dot is a semiconductor structure with all three dimensions on the
order of the electron wavelength, typically ranging from a few nanometers to
tens of nanometers.
- Density of states: Quantum dots exhibit discrete energy levels due to
quantum confinement effects in all three dimensions.
- Electronic properties: Quantum dots have highly confined charge carriers,
resulting in discrete energy levels, Coulomb blockade effects, and single-
electron behavior.
- Energy level structure: Quantum dots have discrete energy levels within the
confined region, forming a ladder of quantized energy states.

5. **Nanoparticle**:
- Nanoparticles are semiconductor structures with sizes ranging from a few
nanometers to hundreds of nanometers, typically consisting of a large number of
atoms or molecules.
- Density of states: Nanoparticles may exhibit discrete energy levels or a
continuous density of states depending on their size and shape, with quantum
effects becoming significant for smaller nanoparticles.
- Electronic properties: Nanoparticles can have tunable electronic and optical
properties influenced by their size, shape, and surface chemistry.
 - Energy level structure: Nanoparticles may exhibit discrete energy levels due
to quantum confinement effects, surface states, and defects.
10. Explain the structure & energy band diagram of MOSFET.

A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of transistor used for

amplifying or switching electronic signals. It consists of three main layers: the semiconductor
substrate (usually silicon), the insulating oxide layer (usually silicon dioxide), and the metal
gate electrode. The structure of a MOSFET can be described as follows:

1. **Substrate**: The semiconductor substrate serves as the foundation for the MOSFET. It is
typically made of silicon and doped to create regions of n-type or p-type conductivity. The
substrate is also known as the bulk or body region of the MOSFET.

2. **Gate Oxide**: The insulating oxide layer, usually made of silicon dioxide (SiO2),
separates the gate electrode from the semiconductor substrate. It acts as a barrier to prevent
current flow between the gate electrode and the substrate. The gate oxide thickness is critical
for controlling the transistor's characteristics, such as threshold voltage and gate capacitance.

3. **Gate Electrode**: The gate electrode is typically made of a metal (e.g., aluminum or
polysilicon) and is deposited on top of the gate oxide layer. The gate electrode controls the
flow of current between the source and drain terminals by applying an electric field to the
semiconductor channel beneath it.

Now, let's discuss the energy band diagram of a MOSFET:

In the off-state (no applied voltage to the gate), the energy band diagram of a MOSFET looks
like this:

- The semiconductor substrate has a flat energy band structure with a valence band and a
conduction band. The Fermi level lies within the band gap, near the middle of the energy gap
for intrinsic silicon.
- The gate electrode is electrically isolated from the substrate by the insulating oxide layer, so
there is no significant change in the energy band structure in the substrate beneath the gate.
When a positive voltage is applied to the gate electrode with respect to the substrate (in
enhancement mode MOSFET):

- The positive voltage on the gate electrode repels the holes (in a p-type substrate) or attracts
the electrons (in an n-type substrate) in the semiconductor substrate beneath the gate.
- As a result, an inversion layer is formed at the interface between the gate oxide and the
substrate. This inversion layer acts as a channel for the flow of charge carriers (electrons or
holes) between the source and drain terminals.
- The energy band diagram in the inversion layer becomes more like that of a metal, with the
Fermi level pinned close to the conduction band edge for an n-type MOSFET or the valence
band edge for a p-type MOSFET.
- The source and drain terminals are typically heavily doped regions of the substrate that
provide a source or sink for the charge carriers in the channel.

In summary, the structure of a MOSFET consists of a semiconductor substrate, an insulating

oxide layer, and a metal gate electrode. The energy band diagram of a MOSFET varies
depending on the applied voltage to the gate electrode and determines the behavior of the
transistor as either on or off.
10. Explain the resonant tunnelling effect with neat diagrams.

The resonant tunneling effect is a quantum phenomenon occurring in semiconductor

heterostructures, notably in devices like resonant tunneling diodes (RTDs). It involves
charge carriers tunneling through a potential barrier, producing sharp peaks in the
device's current-voltage (I-V) characteristic. This effect is depicted in a potential energy
profile diagram, illustrating regions like emitter, barrier, well, and collector, along with
energy levels and wavefunctions. At resonance, when the energy levels align, electrons
tunnel through the barrier more efficiently, leading to increased current flow. Resonant
tunneling enables high-speed, low-power electronic devices like RTDs and quantum
cascade lasers.
11. Kronig–Penney Model

The Kronig-Penney model is a simplified quantum mechanical model used to describe the
electronic band structure of a one-dimensional periodic potential. It provides insights into
the behavior of electrons in a crystalline lattice, specifically in the context of periodic
potentials encountered in solid-state physics.

### Key Concepts:

1. **Periodic Potential**: The Kronig-Penney model considers a periodic potential,
typically represented as a periodic array of delta-function barriers or square barriers.
These barriers represent the periodic arrangement of atoms in a crystal lattice.
2. **Schrödinger Equation**: The model is based on solving the time-independent
Schrödinger equation within the periodic potential. The Schrödinger equation describes
the behavior of quantum particles, such as electrons, in a given potential field.
3. **Bloch's Theorem**: Bloch's theorem states that the wave function of an electron in a
periodic potential can be expressed as a product of a plane wave and a periodic function,
known as the Bloch wave function. This theorem simplifies the solution of the Schrödinger
equation in periodic potentials.
4. **Energy Bands**: The solution to the Schrödinger equation yields energy bands, which
represent allowed energy levels for electrons in the periodic potential. These bands
consist of energy levels that electrons can occupy, separated by band gaps where no
allowed energy levels exist.
5. **Band Structure**: The Kronig-Penney model predicts the band structure of the
crystal, including the dispersion relation between energy and momentum. The dispersion
relation describes how the energy of electrons depends on their momentum within the
crystal.
 6. **Zone Folding**: The Brillouin zone, which represents the periodicity of the crystal
lattice in reciprocal space, is folded into smaller zones due to the periodic potential. This
folding results in the formation of energy bands and band gaps.

### Applications:
1. **Understanding Semiconductors**: The Kronig-Penney model helps in understanding
the electronic properties of semiconductors, including their energy band structure,
conductivity, and optical properties.
2. **Design of Electronic Devices**: The model provides insights into the behavior of
electrons in periodic potentials, guiding the design of electronic devices such as
transistors, diodes, and photonic devices.
3. **Materials Engineering**: By predicting the band structure and electronic properties
of materials, the Kronig-Penney model aids in materials engineering for developing novel
materials with desired electronic characteristics.
12. Explain any ten properties of graphene.
Graphene, a single layer of carbon atoms arranged in a two-dimensional honeycomb lattice,
possesses a variety of remarkable properties due to its unique structure and quantum
mechanical behavior. Here are ten key properties of graphene:

1. **Exceptional Electrical Conductivity**: Graphene exhibits extremely high electrical

conductivity, with electron mobility surpassing that of traditional conductors like copper. This
property makes it promising for applications in high-speed electronics and nanoelectronics.

2. **High Thermal Conductivity**: Graphene also possesses exceptional thermal conductivity,

enabling efficient heat dissipation. It has been found to conduct heat better than most
materials, making it suitable for thermal management applications in electronics and other
industries.

3. **Mechanical Strength**: Despite its atomic thickness, graphene is incredibly strong and
robust. It has a tensile strength of over 100 times that of steel, making it one of the strongest
materials known. This property makes it ideal for strengthening composite materials and
creating lightweight yet durable structures.

4. **Flexibility and Stretchability**: Graphene is highly flexible and stretchable, allowing it to

bend and deform without damage. This property makes it suitable for flexible electronics,
wearable devices, and biomedical applications.

5. **Transparency**: Graphene is transparent to visible light, with a transmittance of around

97.7% per single layer. This property, combined with its electrical conductivity, makes it an
excellent candidate for transparent conductive coatings in applications such as touchscreens,
solar cells, and optoelectronic devices.

6. **Impermeability**: Graphene is impermeable to gases, liquids, and even individual atoms

due to its tightly packed carbon atoms and strong covalent bonds. This property makes it
useful for applications requiring barrier materials, such as protective coatings and membranes
for gas separation.

7. **Chemical Stability**: Graphene is chemically stable under a wide range of environmental

conditions, including exposure to acids, bases, and organic solvents. This stability enhances its
durability and longevity in practical applications.

8. **Biocompatibility**: Graphene exhibits biocompatibility, making it suitable for various

biomedical applications such as drug delivery, tissue engineering, biosensing, and medical
imaging. Its unique properties enable interactions with biological molecules and cells without
causing toxicity or adverse effects.

9. **Quantum Hall Effect**: At low temperatures and in the presence of a strong magnetic
field, graphene exhibits the quantum Hall effect, a phenomenon in which the Hall resistance
becomes quantized and follows precise integer multiples of the von Klitzing constant. This
property has implications for fundamental physics research and potential quantum electronic
applications.

10. **Tunable Electronic Properties**: The electronic properties of graphene can be tuned by
various methods, including doping, strain engineering, and the application of external electric
or magnetic fields. This tunability allows for the modulation of graphene's conductivity,
bandgap, and other electronic characteristics, enabling tailored applications in electronics,
photonics, and spintronics.