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Ae Exp 1 Student Manual
Ae Exp 1 Student Manual
Ae Exp 1 Student Manual
Title: Familiarize with engineering software as a modern simulation tool to investigate the fundamentals of signal and
analog circuits. (Multisim Tutorial)
Abstract:
This experiment involves with simulation based laboratory work where NI Multisim software will be introduced as a modern
engineering tool for simulation. Basic Analog circuits will be constructed to investigate the fundamentals of signals and
analog circuits.
Introduction:
National Instruments’ Multisim software is a circuit teaching application software for analog, digital, and power electronics
courses and laboratories. User can visualize circuits and reinforce theory with simulated instruments, advanced analyses, and
thousands of interactive components through this platform. This software package is easy to use and achieve real time
simulation of analog circuits. This software can be used in laboratory while exercising the simulations, measurements, and
designs of real life systems. Furthermore Multisim can be used as an excellent replacement for many other laboratory
devices, such as digital multimeters, oscilloscopes, function generators, and etc. The objective of this experiment is to use
the NI (National Instruments) Multisim for analog circuit simulations to facilitate the analysis which enhances the
understanding of various analog electric circuits and their mode of operation. This experiment is mostly about learning
Multisim software for analyzing analog circuits and its frequency response. Furthermore, students are meant to notice that a
software simulations are sufficient compared to actual hardware implementation to facilitate the study and
understanding of the theoretical concepts of these circuits.
(a) (b)
Figure: 1 Two alternative representations of a signal source: (a) Th´evenin form; (b) the Norton form.
These two representations in Fig. 1 are equivalent, their parameters are related by
𝑣𝑠 (𝑡) = 𝑅𝑆 𝑖𝑆 (𝑡)
An analog signal is a time-varying quantity that can be represented by a graph such as that shown in Fig. 3. In fact, the
information content of the signal is represented by the changes in its magnitude as time progresses. Electronic circuits that
process such signals are known as analog circuits. Common analog processing elements include capacitors, resistors and
inductors (as the passive elements) and transistors or opamps (as the active elements).
Analog Amplifiers
The most fundamental signal-processing function is signal amplification. An amplifier that preserves the details of the signal
waveform is characterized by the relationship
Where 𝑣𝑖 and 𝑣𝑜 are the input and output signals, respectively, and 𝐴𝑣 is a constant representing the magnitude of
amplification, known as amplifier gain. Equation (2) is a linear relationship; hence the amplifier it describes is a linear
amplifier.
(a) (b)
Figure: 3 (a) A voltage amplifier fed with a signal vI(t) and connected to a load resistance RL. (b) Transfer
characteristic of a linear voltage amplifier with voltage gain Av.
𝑖𝑜
𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝑔𝑎𝑖𝑛(𝐴𝑖 ) = ……………….[4]
𝑖𝑖
Specifically the voltage, current and power gains 𝐴𝑣 , 𝐴𝑖 and 𝐴𝑃 respectively can be expressed as
In analyzing frequency response of an amplifier circuit, single-time-constant (STC) networks will be investigated. An STC
network is one that is composed of, or can be reduced to, one reactive component (inductance or capacitance) and one
resistance.
Figure 5: Two examples of STC networks: (a) a low-pass network and (b) a high-pass network.
An STC network formed of an inductance L and a resistance R has a time constant τ = L/R. The time constant τ of an STC
network composed of a capacitance C and a resistance R is given by τ = CR.
Experimental Procedure:
Experimental procedure is divided into three parts which are -----(i) Multisim tutorial for generating drain and transfer
characteristic curve of a MOSFET and also their dependency on the resistors, (ii) Multisim tutorial for DC analysis of a
MOSFET based analog amplifier and (iii) Multisim tutorial for AC analysis of an analog amplifiers.
PART A
Multisim tutorial for generating drain and transfer characteristic curve of a MOSFET and also their dependency on
the resistors.
Step 1: The circuit of Fig. 6 well be drawn in Multisim following steps below.
RD=470Ω
ID
VDS VDD
VGS
After launching Multisim click on ‘Select a Component’ window A list will appear containing
Place and from the drop down list will appear and from their different real life model of
click on Component. click on Basic and click on transistor. Click on 2N7000
Transistor. model. The symbol will appear.
Click Ok.
Arrange components just Take the cursor to end of Complete the circuit. Few Net Properties window will
by clicking and dragging. any component and click. A nodes appear. To change appear. Write the preferred
To rotate component right solid black circle will the name of the nodes and name in the box ‘VD’ and
click on it and select appear now drag that circle components click on the click OK.
‘Rotate 90˚ Clockwise’. to the end of other wire beside.
component to complete the
connection.
(iii) Assign the name and values to the sources and resistor. (see Fig. 9)
(i) For drawing drain characteristic curve we need to analyze circuit for obtaining IDS and VDS values for different values of
VGS.
Click on Simulate and click New window will appear. Click on DC Click on output. Select circuit current.
on Analyses and Simulation sweep. Assign the values for VGS and
VDS as given
Click on output. Click Add expression to generate a new variable ‘ –I(VDS)’. Follow the steps above. Every
change will appear in Expression box. Then click Run.
The output curve for resistor R=1Ω and R=100Ω respectively. Comment on the effect of R on the magnitudes of ID.
Figure 12: Drain characteristic curve and its dependency on drain terminal resistance.
Go to DC sweep and uncheck the ‘Use Source 2’ Click on Output and select Circuit voltage. Click on V(d) which is the
box. Select VGS as Source 1. VDS for the circuit. and click
Add. Then click Run.
The output curve for resistor R=1Ω and R=100Ω respectively. Comment on the effect of R on the transfer curve.
Figure 14: Transfer characteristic curve and its dependency on drain terminal resistance.
PART B
VDD=20V
RD=4kΩ
R1=2 MΩ
V0
C1=2.2µF C2=2.2µF
100mVp R2=1 MΩ
@ 1kHz RS=3kΩ
Draw the circuit in Multisim Click DC Operating Point. Select V(vd), V(vg) When all the selected values will appear in the
following previous value and assign and V(vs) and -I(VDS) from the variable in ‘Selected variables for analysis’ list click Run.
values for both source and resistors. circuit list.
(ii) Output will come in a new window. From output it can also be calculated whether the MOSFET is in the saturation
region.
To calculate VDS and VGS two expressions can be added in the output variables
as given.
To Check if the voltage VDS is greater than VGS then the MOSFET is in the saturation region. From the calculation it is seen
that, [V(vd)-V(vs)] is 4 times higher than [V(vg)-V(vs)] and hence the MOSFET is in the saturation region=-
PART C
Step 1: (i) Previous common source amplifier will be used to do the AC analysis. An oscilloscope will be connected to
observe input and output waveforms.
(ii) Now select AC Sweep to observe the frequency response of the amplifier.
1. Do the simulation for the given network. Here the model of MOSFET can be replaced by ZVN2106G.
Reports:
1. Write down the limitation of the software.
2. What are the classifications of an amplifier based on its frequency response?
3. What are the limitations of analog amplifiers?
Interpret the data/findings and determine the extent to which the experiment was successful in complying with the goal that
was initially set. Discuss any mistake you might have made while conducting the investigation and describe ways the study
could have been improved.
Reference:
1. Sedra, A. S., & Smith, K. C. (2010). Microelectronic circuits. New York: Oxford University Press.