ТС165-80-9 Triac DATASHEET

ТС165-80-9 ELECTRICAL SPECIFICATIONS

Type: Triac
Maximum repetitive peak and off-state voltage (VDRM): 900 V
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 660 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg,
Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 3.84 K/W
Junction to case thermal resistance (RTH(j-c)): 0.41 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 150 mA