Lab 1: MOSFET DC Ids-Vds

Characteristic Curve

ECE 4160- Technical Elective 1 DVIE C BAGARINAO

NMOS IDS-VGS CHARACTERISTICS CURVE

Vth = 0.49, Wn /Ln = 5

Saturation Region

VDS ≥ VGS - VTH

Figure 4(a)
PMOS IDS-VGS CHARACTERISTICS CURVE

Vth = -0.49 Wp /Lp =29 which is 4.1 times Wn/Ln since un/up ≈ 4.1

Saturation Region

VDS ≥ VGS - VTH

Figure 4(b)
|Idsp| 192.6494u
= = 0.24162
Idsn 797.3210u

μp 0.0102868
= = 0.23103
μn 0.0445265

4.48112% difference
PMOS IDS-VGS CHARACTERISTICS CURVE, Varying W/L

Increasing the W/L

W/L=11 or "aspect ratio" of
the MOSFET
W/L=10
increases the slope
W/L=8.3 of the curve at a
W/L=7.2 constant Vgs. Thus,
it can be deduce
W/L=5.5
that W/L is directly
proportional to the
slope of the curve.
PMOS IDS-VGS CHARACTERISTICS CURVE, Varying W/L

W/L=20
Increasing the W/L or
W/L=26 "aspect ratio" of the
W/L=28 MOSFET increases the
W/L=30 slope of the curve at a
constant Vgs. Thus, it
can be deduce that
W/L is directly
proportional to the
slope of the curve.
PMOS IDS-VGS CHARACTERISTICS CURVE, Varying Vgs

Vgs=1.8V
Saturation Region
VDS ≥ VGS - VTH Vgs=1.5V

Vgs=1.2V

Vgs=0.9V

Vgs=0.6V
Vgs=0V
 PMOS IDS-VGS CHARACTERISTICS CURVE, Varying Vgs

Vgs=0V
Vgs=-0.6V

Vgs=-0.9V

Vgs=-1.2V

Saturation Region Vgs=-1.5V

VDS ≥ VGS - VTH Vgs=-1.8V

Channel Length Modulation

Wn=2.25u

L=0.25u

Short Channel Effect

L=0.5u
L=0.75u
L=1u

Long channel Effect

Channel Length Modulation

Wp=2.25u

L=1u

L=0.5u
Short Channel Effect
L=0.75u

L=0.25u

Long channel Effect

Question no. 1
When the W/L ratio of the device in step 1 is increased,
how does the curve in Figure 4(a) and 4(b) change?

So when the W/L ration of the device in step 1 is

increased, the slope of the curve also increased.
Therefore they are directly proportional.
Question no. 2

Is |Idsp| / |Idsn| = μp/ μn when the device size

Wp/Lp=Wn/Ln?

Yes, when the aspect ratio of PMOS and NMOS is equal

the ratio of drain current of PMOS and NMOS is
approximately equal to its ratio of charge mobility.
Question no. 1