UNIT 1-POWER ELECTRONIC DEVICES

POWER TRANSISTOR

 The below graph represents various regions like the cut-off region,
active region, hard saturation region, quasi saturation region.
 For different values of VBE, there are different current values IB0, IB1,
IB2, IB3, IB4, IB5, IB6.
 Whenever there is no current flow, it means the transistor is off. But
few current flows which are ICEO.
 For increased value of IB = 0, 1,2, 3, 4, 5. Where IB0 is the minimum
value and IB6 is the maximum value. When VCE increases ICE also
increases slightly. Where IC = ßIB, hence the device is known as a
current control device. Which means the device is in active region,
which exists for a particular period.
 Once the IC has reached to maximum the transistor switches to the
saturation region.
 Where it has two saturation regions quasi saturation region and hard
saturation region.
Structure of Power Transistor
The Power Transistor BJT is a vertically oriented device having a large
area of cross-sectional with alternate P and N-type layers are
connected together. It can be designed using P-N-P or an N-P-
N transistor.

pnp-and-npn-
transistor
The following construction shows a P-N-P type, which consists of three
terminals emitter, base, and collector. Where the emitter terminal is
connected to highly doped n-type layer, below which a moderately
doped p-layer of 1016 cm-3 concentration is present, and a lightly
doped n- layer of 1014 cm-3 concentration, which is also named as
collector drift region, where the collector drift region decides the break-
over voltage of the device and at the bottom, it has an n+ layer which
is highly doped n-type layer of 1019 cm-3 concentration, where the
collector is etched away for user interface.

Opration

A power transistor is said to be in a cut off mode if the n-p-n power

transistor is connected in reverse bias where

case(i): The base terminal of the transistor is connected to negative

and emitter terminals of the transistor is connected to positive, and

case(ii): The collector terminal of the transistor is connected to the

negative and base terminal of the transistor is connected to positive
that is base-emitter and collector-emitter is in reverse bias.

Advantages
The advantages of power BJT are,

 Voltage gain is high

 The density of the current is high
 The forward voltage is low
 The gain of bandwidth is large.
Disadvantages

The disadvantages of power BJT are,

 Thermal stability is low

 It is noisier
 Controlling is a bit complex.
Applications

The applications of power BJT are,

 Switch-mode power supplies (SMPS)

 Relays
 Power amplifiers
 DC to AC converters
 Power control circuits.
Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used
as an electronic switch which, as it was developed, came to combine high
efficiency and fast switching.
The insulated gate bipolar transistor (IGBT) is a three terminal semiconductor
device combines the benefits of both MOSFET and BJT. So, an insulated gate
bipolar transistor (IGBT) has input impedance like that of a MOSFET and low
ON state power loss as in a BJT.
It is also called as metal oxide semiconductor insulated gate transistor
(MOSIGT) and other name to this device are insulated gate transistor (IGT),
conductivity modulated field effect transistor (COMFET).
It is similar to that of a double-diffused power MOSFET (DMOS) except for a
p+ layer at the bottom. This layer forms the IGBT collector and a pn junction
with n-drift region, where conductivity modulation occurs by injecting
minority carriers into the drain drift region of the vertical MOSFET. Therefore,
the current density is much greater than a power MOSFET and the forward
voltage drop is reduced. The p+ substrate, n- drift layer and p+ emitter
constitute a BJT with a wide base region and hence small current gain.

Vi characraristics

The Insulated Gate Bipolar Transistor also called an IGBT for short, is
something of a cross between a conventional Bipolar Junction Transistor,
(BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor
switching device.
The IGBT Transistor takes the best parts of these two types of common
transistors, the high input impedance and high switching speeds of a MOSFET
with the low saturation voltage of a bipolar transistor, and combines them
together to produce another type of transistor switching device that is capable
of handling large collector-emitter currents with virtually zero gate current
drive.
Apllication
switching devices in the inverter circuit (for DC-to-AC conversion) for driving
small to large motors.
Ups ,smps, traction system

MOSFET (METAL OXAIDE SEMICONDOCTOR FILED EFFECT TRANSISTOR )

Describe with neat sketch the construction and working principle of MOSFET.
Ans: Construction and working principle of MOSFET:
A) Depletion type MOSFET
Construction:
The N-channel depletion type MOSFET is formed on P-type silicon
substrate with two
heavily doped n+
silicon for low resistance connections of terminals Drain (D) and
Source (S). The third terminal Gate (G) is isolated from the N-channel by
a thin oxide
layer. The substrate is normally connected to the source.
Operation:
The gate-to-source voltage VGS can be either positive or negative. When
VGS is negative, gate becomes negative with respect to source and some
of the electrons in the N-channel are repelled leaving behind positive
ions. The depletion region is created below the oxide layer, effective
channel width is reduced, resulting a high resistance from the drain to
source, RDS. At certain negative voltage VGS the channel will be
completely depleted, offering very high value of RDS and no current will
flow from drain to source i.e. IDS = 0. The value of VGS when this
happens is called pinch-off
voltage, VP. When VGS = 0, no charge will be induced in N-channel and
the resistance
Draw construction of SCR using two transistor model. Explain its
operation. Ans: Two-transistor Model of SCR

A simple p-n-p-n structure of thyristor can be visualized as consisting of

two complimentary transistors: one pnp transistor T1 and other npn
transistor T2 as shown in the figures. The collector current of transistor is
related to emitter current and
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor
device made of silicon. This device is the solid state equivalent of
thyratron and hence it is also referred to as thyristor or thyroid
transistor. In fact, SCR (Silicon Controlled Rectifier) is a trade name given
to the thyristor by General Electric Company. Basically, SCR is a three-
terminal, four-layer semiconductor device consisting of alternate layers
of p-type and n-type material.
 applications like
1. Power switching circuits (for both AC and DC)
2. Zero-voltage switching circuits
3. Over voltage protection circuits
4. Controlled Rectifiers
5. Inverters
6. AC Power Control (including lights, motors, etc.)
7. Pulse Circuits
8. Battery Charging Regulator
9. Latching Relays
10.Computer Logic Circuits

Mounting of SCR When the current passes through SCR is greater than
the rated value, the thermal stress produced in it which generates
mechanical force. If this mechanical force does not control, the SCR may
damaged. The protection of the SCR in such a condition is done by
proper mounting of it. The mounting method depends upon the rating of
the SCR.
Lead mounting This method is used when load current is of small value.
The SCR does not require cooling device or heat sink in this method
because most of the heat is dissipated by radiation and convection.
Bolt mounting There is one hole is provided in the SCR. The heat sink
and SCR are joined by the bolt. The mica or fibre insulation is kept in
between the heat sink and SCR. This type of mounting is used in the
small and medium rating SCR.
Stud Mounting The anode is soldered with aluminium resulting one stud
is created. The SCR is joined to heat sink by this stud. If there is not
necessary electrical isolation, mica or fibre type washers are used. The
conduction of heat is done easily though mica or fibre type washers. It
will also works as electrical insulator.
A silicon-controlled switch, or SCS, is essentially an SCR with
an extra gate terminal. Typically, the load current through an
SCS is carried by the anode gate and cathode terminals, with
 the cathode gate and anode terminals sufficing as control
leads
.
DIAC

A DIAC is a full-wave or bi-directional semiconductor switch that can be turned

on in both forward and reverse polarities.
The name DIAC comes from the words DIode AC switch. The DIAC is an
electronics component that is widely used to assist even triggering of a
TRIAC when used in AC switches and as a result they are often found in
light dimmers such as those used in domestic lighting. These electronic
components are also widely used in starter circuits for fluorescent lamps
A TRIAC is a bidirectional, three-electrode AC switch that allows
electrons to flow in either direction. It is the equivalent of
two SCRs connected in a reverse-parallel arrangement with gates
connected to each other. A TRIAC is triggered into conduction in both
directions by a gate signal like that of an SCR
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Crowbar protectioncircuit

Working of Crowbar Circuit

A Crowbar circuit monitors the input voltage and when it
exceeds the limit it creates a short circuit across the power lines
and blows up the fuse. Once the fuse is blown the power supply
will be disconnected from the load and thus preventing it from
high voltage. The circuit works by creating a direct short circuit
across the power lines, as if a crowbar is dropped between
power lines of the circuit. Hence it gets its iconic name crowbar
circuit.
Over current protection circuit

Overcurrent protection is often used in power supply circuits to limit the

output current of a PSU. The term “Overcurrent” is a condition when the
load draws a large current than the specified capabilities of the power
supply unit. This can be a dangerous situation as an over-current
condition could damage the power supply. So engineers normally use
an over-current protection circuit to cut off the load from the power
supply during such fault scenarios thus protecting the load and power
supply.

Unit 3- turn on turn of methods of thyristor

Dv/dt triggring
dv/dt triggering is the technique in which SCR is turned ON by
changing the forward bias voltage with respect to time. dv/dt
itself means the rate of change of voltage w.r.t time. It is
independent of the magnitude of voltage. The voltage may be
low, but the rate of its rise should be high enough to turn SCR
ON
 Illumination triggering
Light TriggeringIn this method, light rays with appropriate
wavelength and intensity are allowed to strike the junction J 2.
The bombarded energy particles from the light (neutrons or
photons) causes to break electron bonds as as result, new
electron – hole pairs are formed in the device.

Gate Triggering
This is most common and most efficient method to turn ON the SCR. When
the SCR is forward biased, a sufficient positive voltage at the gate terminal
injects some electrons into the junction J2. This results in an increase in the
reverse leakage current and hence the breakdown of junction J2 occurs even
at a voltage lower than the VBO.

Depending on the size of the SCR, the gate current varies from a few milli-
amps to 250 milli-amps or more. If the gate current applied is more, then more
electrons are injected into the junction J2 and results to come into the
conduction state at much lower applied voltage.

DC Gate Triggering
In this triggering, a sufficient DC voltage is applied between the gate and
cathode terminals in such a way that the gate is made positive with respect to
the cathode. The gate current drives the SCR into conduction mode.
AC Triggering
This is the most commonly used method of turning on the SCR, especially in
AC applications. With proper isolation between the power and control circuits
(using transformers), the SCR is triggered by the phase-shift AC voltage
derived from the main supply. The firing angle is controlled by changing the
phase angle of the gate signal.

AC Triggering

This is the most commonly used method of turning on the SCR, especially in
AC applications. With proper isolation between the power and control circuits
(using transformers), the SCR is triggered by the phase-shift AC voltage
derived from the main supply. The firing angle is controlled by changing the
phase angle of the gate signal.

3.2 GATE TRIGGER

R-C
this instant, as both capacitor voltage and supply voltage are equal and
opposite, capacitor current is zero. During period after t = -90° to t =
0°, the supply voltage vs drops from Vm as capacitor discharges. The
discharging current passes through supply source, load and R. At t = 0°,
the capacitor voltage reduces to a value less than Vm, represented by OA
in the waveform diagram. After t = 0°, the supply voltage become
positive, it now helps the discharging current and therefore, the
capacitor gets discharged at faster rate. Its negative voltage (lower plate
positive) get reduced to zero at a particular instant. The discharging
current further continues in the same direction to charge capacitor with
upper plate positive

RESISTANCR GATE TRIGGER

It includes one fixed resistor, variable resistor, diode, SCR(Silicon

Controlled Rectifier), Load resistor. The circuit diagram of an R Triggering
is shown below (Figure 1).Simple resistor; diode combinations trigger
and controlSCRs over the full 180 electrical degree ranges, performing
well at commercial temperatures. These types of circuits operate most
satisfactorily when SCRs have fairly strong gate sensitivities. Since in a
scheme of this type a resistor must supply all of the gate drive required
to turn on the SCR, the less sensitive the gate, the lower the resistance
must be, and the greater the power rating.

-------SCR TRIGGERING USING UJT--------

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SCR TURN OF METHOD

CLASS A –SERIES RESONANT COMMUTATION CIRCUIT

Class A Commutation of Thyristor
Class A commutation of thyristor is a type of forced commutation and is also
referred to as Load Commutation. It is one of the widely used commutation
techniques that mainly find applications in high-frequency operations.

Previously we have discussed that commutation of thyristor corresponds to

turning the SCR off. Let us have a brief idea about-

Commutation Techniques of Thyristor

We have discussed thyristors that even after being in forward biased
condition, the thyristor does not conduct until and unless gate pulse is not
applied to it. So, a gate pulse is necessarily required to trigger the SCR. But
there are some questions like, what about turning the device off, is it will be
done automatically or we need to add some external circuitry to commutate
the device.

So, we have already seen previously that there are majorly two types of
commutation techniques, natural and forced.

Class A commutation is a sub-classification of forced commutation sometimes

called self or resonant commutation. To commutate the thyristor, two
necessary actions must be considered:

 IA > IH i.e., anode current must be less than holding current.

 The potential at anode must be lower than the cathode.
Circuit of Class A Commutation
The circuit representation for load commutation is shown below:

In the circuit given below it is clearly shown that load i.e., R is connected
serially with the commutating components i.e., L and C. Generally, when
values of R, L, and C are low then in that case, the elements are
arranged serially along with SCR as shown abov

CLASS B-SHUNT RESONANT COMMUTATION CIRCUIT

Class B commutation is also called as Resonant-Pulse

Commutation. It is one of the types of forced commutation. Class-C
commutation is also known as complementary commutation.
Complementary commutation is also called voltage commutation,
forced commutation, complimentary impulse commutation

CLASS C- COMPLIMENTARY SYMMETRY COMMUTATION

CIRCUIT

Class C Commutation of Thyristor

A sub-classification of forced commutation in which the device is commutated
by transferring the load current of the main thyristor to another thyristor in the
circuit is Class C Commutation of the Thyristor. Another name for this type
of commutation is complementary commutation.

This commutation technique shows high reliability and suits operations at fr

equencies below 1000 Hz.

CLASS D-AUXILIARY COMMUTATION

Class D Commutation of Thyristor

A sub-classification of forced commutation technique in which the main
thyristor is commutated by application of reverse voltage along with the use of
an auxiliary thyristor is known as Class D Commutation of Thyristor. As it
uses reverse-biased voltage to turn the thyristor off it is also referred to as
Voltage Commutation
CLASS E-EXTERNAL PULSE COMMUTATION

In Class E commutation method, the reverse voltage is applied to

the current carrying thyristor from an external pulse source. A
typical Class E commutation circuit is shown in Fig. 1 and the
associated waveforms

CLASS F-LINE OR NEUTRAL COMMUTATION

Principle of Class-F or Natural or Line Commutation:When

an SCR circuit is energized from an AC source, the current has to
pass through its natural zero at the end of every half cycle. The AC
source then applies a negative voltage across the cathode and
anode terminals of SCR.2
UNIT 4- PHASE CONTROLLED RECTIFIERS
R LOAD
----------------------------------------------------------------------------------------------------

RL LOAD
UNIT 5-INDUSTRIAL APPLICATION

5.1 –BURGLAR SYSTEM

Working of Burglar Alarm

The working of a burglar alarm consists of a series of steps. The first step is
motion detection. The motion sensors connected to a burglar alarming
mechanism are placed on the surface of the premises near the doors and
windows. The placement of the motion sensors is required to be done
strategically. If an unauthorized person tries to enter the premises, the
motion gets sensed, the sensors get triggered and the counting mechanism
of the alarm gets activated. For the purpose of motion detection, detectors
can also be used along with or in place of sensors. The output of the
detectors or sensors is linked to the control panel of the device. The control
panel of the device takes the information received by the detectors or
sensors and use it to trigger the alarm.

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TEMPRATURE CONTROLLR USING SCR
ILLUMINATION CONTROL/FAN SPEED CONTROL USING TRIAC

In this triac based fan regulator circuit, you need four main components
i.e. capacitor, resistor, Diac, and Triac itself. A triac is a semiconductor device it
belongs to the family of thyristors, it is a PNPN type device. A triac manly
works as an AC switch and a solid-state relay. Its switching frequency is 400Hz
which is sufficient for this purpose.

Explain the working principle of SMPS with neat diagram. Ans: Working
principle of SMPS:

 SMPS converts unregulated AC or DC voltage into a regulated voltage.In case

of AC it first converted into unregulated DC. This is fed to a high frequency
switching element. The switch is operating at the high frequencies of 20 kHz to
1 MHz, chopping the d.c voltage into a high frequency square wave. This
square wave is fed into power isolation transformer ,stepped down to a
predetermined value and then

rectified and filtered to produce the required d.c output.  A portion of this
output is monitored and compared against the fixed reference voltage and the
error signal is used to control the on-off times of the swich, thus regulating the
output
Working of Off-line UPS
UPS is a device that includes a rectifier, filter, inverter, static switches, and
battery backup as its major components. By the use of these components,
power is supplied normally and from the backup to the load in case of power
disruption.

An off-line UPS operates differently from that of on-line UPS and this
difference in operation is generated mainly due to the circuit arrangement. The
complete circuit operation takes place in two modes. Let us now discuss each
mode of operation separately.