TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices

Darlington Complementary
Silicon Power Transistors
http://onsemi.com
Designed for general−purpose amplifier and low frequency
switching applications.
10 AMPERE
Features DARLINGTON
• High DC Current Gain − COMPLEMENTARY SILICON
Min hFE = 1000 @ IC POWER TRANSISTORS
= 5.0 A, VCE = 4 V 60−100 VOLTS, 125 WATTS
• Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Pb−Free Packages are Available*

SOT−93 (TO−218)
MAXIMUM RATINGS CASE 340D
TIP140 TIP141 TIP142 STYLE 1
Rating Symbol TIP145 TIP146 TIP147 Unit
Collector − Emitter Voltage VCEO 60 80 100 Vdc
Collector − Base Voltage VCB 60 80 100 Vdc
Emitter − Base Voltage VEB 5.0 Vdc MARKING DIAGRAM
Collector Current IC Adc
− Continuous 10
− Peak (Note 1) 15

Base Current − Continuous IB 0.5 Adc

Total Power Dissipation PD 125 W AYWWG
@ TC = 25_C TIP14x
Operating and Storage TJ, Tstg −65 to +150 _C
Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, RqJC 1.0 °C/W A = Assembly Location
Junction−to−Case Y = Year
WW = Work Week
Thermal Resistance, RqJA 35.7 °C/W TIP14x = Device Code
Junction−to−Ambient
x = 0, 1, 2, 5, 6, or 7
Maximum ratings are those values beyond which device damage can occur. G = Pb−Free Package
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
1. 5 ms, v 10% Duty Cycle. See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please Preferred devices are recommended choices for future use
download the ON Semiconductor Soldering and Mounting Techniques and best overall value.
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

September, 2005 − Rev. 5 TIP140/D
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

DARLINGTON SCHEMATICS

NPN COLLECTOR PNP COLLECTOR

TIP140 TIP145
TIP141 TIP146
TIP142 TIP147

BASE BASE

≈ 8.0 k ≈ 40 ≈ 8.0 k ≈ 40

EMITTER EMITTER

ORDERING INFORMATION
Device Package Shipping
TIP140 SOT−93 (TO−218) 30 Units / Rail
TIP140G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP141 SOT−93 (TO−218) 30 Units / Rail

TIP141G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)
TIP142 SOT−93 (TO−218) 30 Units / Rail
TIP142G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP145 SOT−93 (TO−218) 30 Units / Rail

TIP145G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP146 SOT−93 (TO−218) 30 Units / Rail

TIP146G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

TIP147 SOT−93 (TO−218) 30 Units / Rail

TIP147G SOT−93 (TO−218) 30 Units / Rail
(Pb−Free)

http://onsemi.com
2
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mA, IB = 0) TIP140, TIP145 60 − −
TIP141, TIP146

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
80 − −
TIP142, TIP147 100 − −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VCE = 30 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
TIP140, TIP145
ICEO
− − 2.0
mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP141, TIP146 − − 2.0
(VCE = 50 Vdc, IB = 0) TIP142, TIP147 − − 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
(VCB = 60 V, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ TIP140, TIP145
ICBO
− − 1.0
mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(VCB = 80 V, IE = 0) TIP141, TIP146 − − 1.0
(VCB = 100 V, IE = 0) TIP142, TIP147 − − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 V) IEBO − − 20 mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
(IC = 5.0 A, VCE = 4.0 V)

ÎÎÎÎ
ÎÎÎ
(IC = 10 A, VCE = 4.0 V)
ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎ
1000
500
−
−
−
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎÎÎÎ
(IC = 5.0 A, IB = 10 mA) − − 2.0
(IC = 10 A, IB = 40 mA) − − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(IC = 10 A, IB = 40 mA)

ÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage

ÎÎÎ
VBE(sat) − − 3.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) − − 3.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 A, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Resistive Load (See Figure 1)
ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Delay Time td − 0.15 −
(VCC = 30 V, IC = 5.0 A, ms

ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Rise Time tr − 0.55 −
IB = 20 mA, Duty Cycle v 2.0%,
ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Storage Time IB1 = IB2, RC & RB Varied, TJ = 25_C) ts − 2.5 −
Fall Time tf − 2.5 − ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

10
VCC PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS −30 V
5.0 NPN
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC ts
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT 2.0
t, TIME (s)

V2 RB tf
μ

approx
+12 V 1.0
D1 ≈ 8.0 k
51 ≈ 40 tr
0
0.5
V1
appox. +4.0 V VCC = 30 V
td @ VBE(off) = 0
−8.0 V 25 ms 0.2 IC/IB = 250
for td and tr, D1 is disconnected
and V2 = 0
IB1 = IB2
tr, tf ≤ 10 ns TJ = 25°C
DUTY CYCLE = 1.0% 0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

http://onsemi.com
3
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

TYPICAL CHARACTERISTICS
NPN PNP
TIP140, TIP141, TIP142 TIP145, TIP146, TIP147
20,000

5000 TJ = 150°C
TJ = 150°C
100°C 10,000 100°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

7000
2000 25°C 25°C
−55 °C 5000

−55 °C
1000 3000

2000
500 VCE = 4.0 V VCE = 4.0 V
300 1000
0.5 1.0 2.0 3.0 4.0 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS)

5.0 VCE(SAT), COLLECTOR−EMITTER SATURATION VOLTAGE (VOLTS) 5.0

3.0 3.0

2.0 2.0 IC = 10 A, IB = 4.0 mA

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA IC = 5.0 A, IB = 10 mA
1.0 1.0
IC = 1.0 A, IB = 2.0 mA IC = 1.0 A, IB = 2.0 mA
0.7 0.7

0.5 0.5
−75 −50 −25 0 25 50 75 100 125 150 175 −75 −50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−Emitter Saturation Voltage

4.0 4.0
VBE, BASE−EMITTER VOLTAGE (VOLTS)

VBE, BASE−EMITTER VOLTAGE (VOLTS)

3.6 VCE = 4.0 V 3.6 VCE = 4.0 V

3.2 3.2

2.8 2.8

2.4 2.4
IC = 10 A IC = 10 A
2.0 2.0

1.6 5.0 A 1.6

5.0 A
1.2 1.2
1.0 A 1.0 A
0.8 0.8
−75 −25 25 75 125 175 −75 −25 25 75 125 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base−Emitter Voltage

http://onsemi.com
4
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

ACTIVE−REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of The data of Figure 6 is based on T J(pk) = 150_C; TC is
a transistor: average junction temperature and second variable depending on conditions. At high case
breakdown. Safe operating area curves indicate IC − VCE temperatures, thermal limitations will reduce the power that
limits of the transistor that must be observed for reliable can be handled to values less than the limitations imposed by
operation; i.e., the transistor must not be subjected to greater second breakdown.
dissipation than the curves indicate.

20
IC, COLLECTOR CURRENT (AMP) (mA)

15

IC, COLLECTOR CURRENT (AMPS)

10
7.0 10
5.0
7.0
3.0 dc
5.0
2.0 TJ = 150°C 100 mJ
SECONDARY BREAKDOWN LIMIT
1.0 BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
2.0
TIP140, 145
TIP141, 146
0.2 TIP142, 147 1.0
10 15 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) L, UNCLAMPED INDUCTIVE LOAD (mH)

Figure 6. Active−Region Safe Operating Area Figure 7. Unclamped Inductive Load

VCE MONITOR w ≈ 7.0 ms (SEE NOTE 1)

INPUT 5.0 V
MPS−U52 VOLTAGE 0
COLLECTOR 100 ms
RBB1 100 mH
TUT CURRENT 0
50
INPUT 1.5k VCC = 20 V 1.42 A
50 RBB2 IC
MONITOR VCE(sat)
= 100 −20 V
VBB2 = 0
RS = 0.1 COLLECTOR
VBB1 = 10 V
VOLTAGE

V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. VOLTAGE AND CURRENT WAVEFORMS
NOTE 2: For NPN test circuit reverse polarities.
Figure 8. Inductive Load

http://onsemi.com
5
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

100

hfe , SMALL−SIGNAL FORWARD CURRENT

70 VCE = 10 V
50 IC = 1.0 A
TJ = 25°C
PNP

TRANSFER RATIO
20 PNP
NPN
10 NPN
7.0
5.0

2.0

1.0
1.0 2.0 3.0 5.0 7.0 10
f, FREQUENCY (MHz)

Figure 9. Magnitude of Common Emitter

Small−Signal Short−Circuit Forward
Current Transfer Ratio

5.0
PD, POWER DISSIPATION (WATTS)

4.0

3.0

2.0

1.0

0
0 40 80 120 160 200
TA, FREE−AIR TEMPERATURE (°C)

Figure 10. Free−Air Temperature Power Derating

http://onsemi.com
6
 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

PACKAGE DIMENSIONS

SOT−93 (TO−218)
CASE 340D−02
ISSUE E

C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A −−− 20.35 −−− 0.801
A B 14.70 15.20 0.579 0.598
S L C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
1 2 3 E 1.17 1.37 0.046 0.054
K G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L −−− 16.20 −−− 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
D J V 1.75 REF 0.069
H STYLE 1:
V PIN 1. BASE
2. COLLECTOR
G 3. EMITTER
4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.

http://onsemi.com TIP140/D
7