343740

Solid State Electronic Material

2023
Spring

Woonggi Hong
Dankook University

1
Formation of Energy Band (Re-visit)
Ø Band diagram of silicon Note

At 0K

Conduction band:
4N states with 0N e-
(empty)

Hybridized sp3

Valence band:
4N states with 4N e-
(full)

• Energy band gap

: width of the forbidden band between conduction band and valence band
• Energy level of individual atoms → Energy band of a solid

2
Metals & Semiconductors & Insulators (Re-visit)

SiO2: 9 eV Si: 1.1 eV

• In an applied E-field, electrons experience acceleration.

• Empty states available to the electrons → conductive
ü Allowed energy states which are not already occupied by electrons
• Thermal excitation of the carriers (Si)

3
k-Space Diagram

One-free electron Electrons in single crystal

Allowed energy band

Forbidden energy band

Note

ℎ ℎ 2𝜋
𝑝= = = ℏ𝑘 • Because of periodicity of trigonometric function,
𝜆 2𝜋 𝜆
𝑝2 ℏ2𝑘2 E-k diagram can be described in reduced k-space.
𝐸= =
2𝑚 2𝑚 • The parameter ℏ𝑘 in a single crystal : crystal momentum
à not actual momentum of the electron
à a constant of the motion that includes the crystal interaction

4
Energy Band & Bond Model
Covalent bonding in Silicon Energy band

T=0K T>0K

Above 0 K, when valence band electrons gain enough thermal energy,

ü Bond Model : Breaking the covalent bond
ü Energy band : Jump into Conduction band from valence band
- Empty states are created in valence band
- Occupied states are observed in conduction band

5
Concept of the Hole
T>0K

• As the temperature of a semiconductor is raised from 0K

ü Some electrons in valence band receive enough
Electron-Hole pair Electron: ball thermal energy to be excited
e--h+ pair Hole: bubble
EHP ü Electron-hole pair (EHP) generation

6
Drift Current

𝐽 = 𝑞𝑁𝑣𝑑 [A/cm2]
à Fully filled valence band (= No empty states)
à No charge transport in the valence band (𝑁 ∶ volume density [cm!" ], 𝑣𝑑 ∶ drift velocity [cm/s]
à No charge transport either in the conduction band
&
Note
𝐽 = −𝑞 = 𝑣𝑖 [A/cm2]
Current : net flow of charges #$%

Drift current : net flow of charges by E-field (𝑛 ∶ the number of electrons per unit volume)

In an applied E-field, electrons experience acceleration.

à Electrons get energy à Move to new energy states in conduction band

7
Electron Effective Mass
Note

ℎ ℎ 2𝜋
𝐹!"!#$ = 𝐹%&! + 𝐹'(! = 𝑚𝑎 𝑝= = = ℏ𝑘
𝜆 2𝜋 𝜆
𝐹'(! = 𝑚∗ 𝑎 𝑝2 ℏ2𝑘2
𝐸= =
2𝑚 2𝑚

𝐸 = 𝐶1𝑘2 + 𝐸( 𝑑𝐸 ℏ2𝑘 ℏ𝑝 𝑑2𝐸 ℏ2

1 = = 2 =
𝑑𝑘 𝑚 2𝑚 𝑑𝑘2 𝑚
1 𝑑𝐸 𝑝 1 𝑑2𝐸 1
𝐸 = −𝐶2𝑘2 + 𝐸) = =𝑣 =
ℏ 𝑑𝑘 𝑚 ℏ2 𝑑𝑘2 𝑚

𝐸 = 𝐶1𝑘2 + 𝐸! 𝐸 = −𝐶2𝑘2 + 𝐸#

! #%$ &'& ! ! #%$ )&'% !

= = = =(∗
ℏ% #%% ℏ% (' ∗ ℏ% #%% ℏ% (

• Electrons interact with the periodic potential of the lattice

• Effective mass (𝑚∗ ) : particle mass considering the effect
of the internal forces

8
k-Space Diagram of Si and GaAs

FCC structure

Conduction Band Minimum

(CBM)
Direct Indirect
bandgap bandgap

Valence Band Maximum

(VBM)

• Distance between atoms varies according to the crystal direction.

= Potential pattern will be different according to the crystal direction.
= E-k diagram will be different according to the crystal direction.
• Effective mass is also different according to the crystal direction.
• Direct/Indirect properties have significant effect on the optical properties of material.