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EN1014 Electronic Engineering 6/24/2022

The Great Invention in 1948

Bipolar Junction Transistor


Amplifier

Kithsiri Samarasinghe
Willium Shokley explaining their invention
Senior Lecturer
Dept. of Electronic & Telecommunication Engineering
Team : Willium Shokley, John Bardeen, Walter Brattain

Bell Laboratories, USA

1 2

The First-ever Transistor Early Developments

1948 1952 1952 1954


The point- Junction field- Single-crystal Oxide masking
contact BJT is effect transistor silicon is process is
invented ( JFET) is fabricated developed.
invented

World’s First Transistor developed by Shokley, Bardeen and Brattain

3 4

Packaging BJTs for practical use


Packages for BJT

TO 18 , TO 39, TO 92, TO 99
TO 5, TO247

TO 3

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EN1014 Electronic Engineering 6/24/2022

TO-92

Miniaturizing trend

7 8

Three Terminals of a BJT Internal Structure

Three Layers of Middle Layer is


▪ E - Emitter Extrinsic the BASE Base is thin
Semiconductors

▪ B - Base
E C
Emitter Base Collector
▪ C - Collector

It‘s a sandwich
B

9 10

PNP Transistor PNP Transistor

E C E C
p n p

B B

11 12

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NPN Transistor NPN Transistor

E C E C
n p n

B B

13 14

Summary DC Bias & Operating Modes

Switching Amplifying
Mode Mode

Cut-Off BE Junction
Forward
(OFF State) Biased

Saturation BC Junction
(ON State) Reverse Biased

15 16

Summary of Modes Analog & Digital

Mode & State BIAS Analog Digital


BE BC Electronics Electronics
Switching Cut-Off Rev Rev
we study how transistors we study how they are used
Saturation Fwd Fwd are used as amplifiers as switching devices
Amplifying Active Fwd Rev

17 18

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EN1014 Electronic Engineering 6/24/2022

BJT as an Amplifier

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Amplification Amplification

21 22

Amplification Biasing an NPN BJT for


For ‘biasing’ the BJT

Amplifying Mode

VCE

VBE
VCB

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EN1014 Electronic Engineering 6/24/2022

Biasing an NPN BJT for


NPN BJT Biasing
Amplifying Mode

• The Base must be more positive than


VCB VCB the Emitter
VCE

VBE
• The Collector must be even more
VBE
positive than the Base

25 26

Biasing the PNP BJT Activity

If a PNP transistor is selected, The base terminal


must be more ………. than the emitter terminal in
VCB VCB order to forward bias the B-E junction.
VCE
The collector terminal must be even……...…….
VBE VBE than the base terminal in order to reverse bias the
B-C junction.

27 28

Solution External Voltages and Currents


If a PNP transistor is selected, The base terminal must
be more NEGATIVE than the emitter terminal in order
to forward bias the B-E junction.

The collector terminal must be even MORE


NEGATIVE than the base terminal in order to reverse
bias the B-C junction.

29 30

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EN1014 Electronic Engineering 6/24/2022

Kirchoff’s Current Law

Internal Operation of BJT


IE = IB + IC

31 32

Junctions Biased by External DC sources Junctions Biased by External DC sources

BC junction is reverse biased


Electric field exists in the depletion layer
Only the Minority carriers can cross it

BE Junction is forward biased


Majority carriers can cross BE junction

33 34

Behaviour of Current Carriers Transistor Action

Majority carriers from emitter gets injected to the base at high velocity

But the Base is thin

Therefore most of them get caught in the electric field of BC junction

They are swept to the Collector

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Rearranging the Bias Supplies Replacing BJT with its Symbol…

37 38

Separating Input and Output Terminals… Limiting Currents with External Resistors

V CE

Electron Flow

39 40

Static Current Gain Concept


 Ratio between static output current and static input
current.

BJT Current Relationships  Also given as hFE

β = hFE = IC/IB

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EN1014 Electronic Engineering 6/24/2022

Current Relations
α = hFB = IC/IE
IC = β IB
IE = IB + IC
I E = IB + β I B
IE = (1 + β) IB

43 44

Generating a Higher Force…


Example

 BC 109C BJT
 HFE = 500 (Typ.)
 Find currents in the three
terminals when the Base
current is 20 A ?

45 46

Current Control Concept

 Using a small current to control a larger current

 Collector current is determined by the base current.


BJT Amplifier Configurations
 BJT is a current-controlled device.

 Controlling + Controlled =Emitter current

 Current means; electron and hole movement

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EN1014 Electronic Engineering 6/24/2022

there are one port amplifiers in diodes

An Amplifier Two Ports from Three Terminals ?

 An amplifier should have an input port and an


output port (Four wires). Input port Amplifier Output port
two port device

Input port Amplifier Output port  BJT is a three terminal device !


 Solution : Take one of it’s terminals as a
common terminal for both ports.

49 50

Three Amplifier Configurations

BJT

Common Common
Common Base
Emitter Collector
Configuration
Configuration Configuration
(CB)
(CE) (CC)

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EN1014 Electronic Engineering 6/27/2022

don’t get too much amplification from one transistor, noise, hum , power interfearence

for high gain, put one amplifier after another (cascaded amplifiers) - these can generate more power with stability

Configuration CE CC CB

Voltage Gain High <1 HIgh

Current Gain High High <1

Power Gain High Moderate Moderate

Phase Inversion Yes No No BJT Characteristics


Input Moderate High Low
Impedance (≈1K) (≈300K) (≈50 Ohm)

Output Moderate Low High


Impedance (≈50K) (≈300 Ohm) (≈1M)

54 first rf circuit of mobile phones 55

Number of Variables involved Variables in an Amplifier Configuration


reducing number of variables
by choosign a 2 port network
 Diode
– One current and one voltage
BJT
Input voltage Output voltage
 BJT Input current Output current
– Three currents and three voltages!
– They are interdependent
– How many characteristic graphs?
Four Variables
Vi, Ii, Vo, Io

56 57

Three Characteristics of a BJT in a given


Characteristics of a BJT
Amplifier Configuration
DC behaviors
mutual characteristics
Static Transfer
Characteristics Static Output Characteristics

 Static Input Characteristics


BJT
Static Input Static Output
Characteristics Characteristics  Static Transfer Characteristics
– Mutual Characteristics

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EN1014 Electronic Engineering 6/27/2022

Test Circuit for CE Configuration Static Input Characteristics

 The plot of input current against input


voltage
input current depends on this
– Keep the output voltage constant
– Multiple curves for each constant value

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Static Input Characteristics for CE


Configuration

 For CE configuration it is the plot of Base current


vs Base voltage

– Collector voltage is kept constant


– Remember diode characteristics >

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Static Input Characteristics Static Output Characteristics


Vce increases leaving less current to Base terminal

 The plot of output current against output voltage

– Keep the input current constant


– Multiple curves for each constant value

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EN1014 Electronic Engineering 6/27/2022

Static Output Characteristics Static Output Characteristics


Text

 For CE configuration it is the plot of Collector


current vs Collector voltage
maximum number of electrons to be caught by collector is reached
called saturation value
– Base current is kept constant
>

66 67

Static Output Characteristics Static Transfer Characteristics


plotting controlled parameter, vs controlling parameter
Biasing the base more will
give high base current  The plot of output current against input current
which will inturn increase
the max level of Ic – Keep the output voltage constant
– Multiple curves for each constant value

 For CE configuration it is the plot of Collector current


vs Base current
– Collector voltage is kept constant
– Linear behaviour

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Controlled Vs. Controlling Controlled Vs. Controlling


Collector Collector
Current Current

Saturation Region

Ic = B Ib
Active / Amplifying
linear region
active / amplify region Region

Cut-off Region
Base Current Base Current

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EN1014 Electronic Engineering 6/27/2022

Typical Static Output Characteristics for


CE Three Regions
Junctions are reversed biased

switching action  Cut-off Region


Junctions are forward biased
 Saturation
Region
Active Region

Saturation
 Active Region
(Amplifying
Cut-off Region
Region)

72 73

Summary of BJT Characteristics static output


static transfer
Collector
Current

All Characteristics
in one diagram
Base Current

static input
BJT

irrespective of the configuration (CC, CE, CB)


the graph will take this shape

74 75

Biasing in CE Configuration

BJT in
Common Emitter Amplifier
Configuration

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EN1014 Electronic Engineering 6/27/2022

Output Side is a Potential Divider… Kirchoff’s Voltage Law

VLOAD + VTRANSISTOR = VSUPPLY

78 79

A Negative Resistance ? Activity


when increase base current load voltage decrease and vise versa When collector current is increased voltage across
……………… rises and voltage across ………………
IC
decreases. When the input voltage increases,
collector current ………………., and the voltage
IB
across the load …………………… . The output
IE voltage is the C-E voltage across the transistor. It
………, as a result of the increase in load voltage.

80 81

in microwaves, at high frequencies, even a diode acts as a negative resistance, acting as an amplifier)

Answer Conceptualizing …
Proportional Lighting in Amplifying Mode
When collector current is increased voltage across
transducers, output
the LOAD rises and voltage across TRANSISTOR side of
control circuits
decreases. When the input voltage increases,
collector current RISES, and the voltage across
the load RISES AS A RESULT. The output voltage
is the C-E voltage across the transistor. It DROPS,
sensors are input side of
as a result of the increase in load voltage. control circuits

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Lighting Proportional to Sound

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DC Load Line

VLoad = IC x RL
VTransistor = VCE
Plotting DC Load Line VSupply = V+ = VCC

Using Kirchoff's Voltage Law …

VCE + IC x RL = VCC

85 86

DC Load Line DC Load Line is KVL in Graphical Form

Collector Current (IC )


VCE + IC x RL = VCC

IC x RL = - (VCE)+ VCC
1 𝑉𝐶𝐶
VCC/RL 𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑉𝐶𝐸 𝑉𝐶𝐶 𝑅𝐿 𝑅𝐿
𝐼𝐶 = − +
𝑅𝐿 𝑅𝐿

1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐿 𝑅𝐿

Y= m. X + C
VCC Collector Voltage (VCE )

87 88

Operating Point (Q Point)


Collector Current (IC )

Quiescent point / operating point Operating Q Q

VCC/RL [VCE,Q, IC,Q]


Point
(Q Point)
IC,Q IB,Q

Q
Collector Voltage
(VCE )
VCE,Q VCC

89 90

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EN1014 Electronic Engineering 6/28/2022

A Common Emitter BJT Amplifier ?

BJT Biasing Techniques

1. Base Bias
2. Fixed Bias Amplitude 1.5 V

Frequency 1 kHz
3. collector feedback bias
4. potential divider bias

91 92

Output is half wave Rectified


not amplifying , it’s rectifying
DC Bias on Terminals

• Transistor must be in its active mode throughout the


BE is not entire cycle of the input AC signal. This is called ‘Class
forward biased the
whole time A’ operation.

• Solution :
• Superimpose the small input AC signal on a DC
voltage.

93 95

having two power supplies is not good for cost effectiveness

good for labs not for industries, we are biasing base directly with dc

The Base Bias

DC bias 2.3 V DC voltage 2.3 V


Amplitude 1.5
Frequency 1 kHz AC Amplitude 1.5 V

Frequency 1 kHz

PNP Needs Opposite Bias Polarity.

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DC Analysis Ex. Base Bias Example


Let us analyze this circuit

DC voltage=2.3 V
AC = 0 V

102 103

Maximum theoretical drive possible

1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐿 𝑅𝐿

IB,Q = 198 µA The Fixed Bias

104 105

Fixed Bias Circuit


Apply KVL
+VCC VBE + IB.RB = VCC
RB RL
high resistor Analysis

VBE + IB.RB = VCC


0.7 V
VBE IB.RB = VCC - VBE Typical

IB,Q = (VCC - VBE,Q) / RB

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EN1014 Electronic Engineering 6/28/2022

Apply KVL
VBE + IB.RB = VCC Plotting DC Load Line
Designing

VBE + IB.RB = VCC


Selecting Static Output
0.7 V Characteristics
IB.RB = VCC - VBE Typical

RB = (VCC - VBE,Q) / IB,Q

108 109

DC Load Line DC Load Line


VCE + IC x RL = VCC
VLoad = IC x RL
VTransistor = VCE IC x RL = - (VCE)+ VCC

VSupply = V+ = VCC 𝑉𝐶𝐸 𝑉𝐶𝐶


𝐼𝐶 = − +
𝑅𝐿 𝑅𝐿

Using Kirchoff's Voltage Law … 1 𝑉𝐶𝐶


𝐼𝐶 = − 𝑉𝐶𝐸 +
VCE + IC x RL = VCC 𝑅𝐿 𝑅𝐿

Y= m. X + C

110 111

DC Load Line is KVL in Graphical Form Operating Point (Q Point)


Collector Current (IC ) Collector Current (IC )

1 𝑉𝐶𝐶 [VCE,Q, IC,Q]


VCC/RL 𝐼𝐶 = − 𝑉𝐶𝐸 + VCC/RL
𝑅𝐿 𝑅𝐿

IC,Q IB,Q

Collector Voltage
(VCE )
VCC Collector Voltage (VCE ) VCE,Q VCC

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EN1014 Electronic Engineering 6/28/2022

Feeding the Input Signal to Ride on D.C.


 Input signal is a small a.c. signal
 Eg. Audio from a microphone

 Should ride on d.c. bias levels. This is known as


superimposing.
 Use coupling capacitors
 Input coupling capacitor can superimpose small a.c.
 Input signal is elevated to level VBE,Q
signal on base bias.
 Output DC level (VCE,Q) is removed by
Watch this Video… output coupling capacitor
https://youtu.be/eF8e-FmtDh4

114 115

Common Emitter Amplifier with Fixed Bias An Example Design


5V

VCC
+ block dc currents 40 µA
going into the speaker
RB RL 107
1.25
KΩ
KΩ

β = 50
CC
CC
ri
1 KΩ
(for ac)

116 117

Load Line on Output Characteristics (Cont.)


Load Line on Static Output Characteristics

(2.5 V, 2 mA)

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DC voltage 0 V Saturation current 1 fA


Amplitude 16.8 mV Forward beta 50
Frequency 1 kHz Collector resistance 1Ω
Base resistance 1Ω
Emitter resistance 1Ω

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DC Analysis

DC voltage 0 V Saturation current 1 fA


Amplitude 16.8 mV Forward beta 50
Frequency 1 kHz Collector resistance 1Ω
Base resistance 1Ω
Emitter resistance 1Ω

122 123

124 125

Gain of an Amplifier

• Ratio between an output parameter and the


corresponding input parameter

• Gain is specified in three ways


• Power Gain (G)
• Voltage Gain (Av)
• Current Gain (Ai)

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Current Gain of an Amplifier

• Ratio between the peak-peak output current variation


and the peak-peak input current variation

𝐼𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑖 =
𝐼𝑖,(𝑝𝑘−𝑝𝑘)

𝐼𝑜,(𝑝𝑘−𝑝𝑘)
Ex. Find the current gain of the circuit 𝐴𝑖 =
𝐼𝑖,(𝑝𝑘−𝑝𝑘)

128 129

Voltage Gain of an Amplifier


• Ratio between the peak-peak output voltage variation
and the peak-peak input voltage variation

𝑉𝑜,(𝑝𝑘−𝑝𝑘)
𝐴𝑣 =
𝑉𝑖,(𝑝𝑘−𝑝𝑘)

Ex. Find the voltage gain of the circuit. 𝑉𝑜,(𝑝𝑘−𝑝𝑘)


𝐴𝑣 =
Assume input resistance as 1 KΩ 𝑉𝑖,(𝑝𝑘−𝑝𝑘)

130 131

Power Gain of an Amplifier Power Gain of an Amplifier

• Ratio between the output signal power and the Power = voltage x current
input signal power
𝑉𝑜 . 𝐼𝑜 𝑉𝑜 𝐼𝑜
𝐺= = . = 𝐴𝑣 . 𝐴𝑖
𝑉𝑖 . 𝐼𝑖 𝑉𝑖 𝐼𝑖
𝑃𝑜
𝐺=
𝑃𝑖 𝐺 = 𝐴𝑣 . 𝐴𝑖

Ex. Find the power gain of the circuit

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Input voltage vs. Output voltage

134 135

Phase Inversion
Q Q
• Output voltage measured between emitter and collector on
a common-emitter amplifier, is 180 degrees out of phase
with the input voltage waveform.

• Common-emitter amplifier is called an inverting amplifier


circuit.
Q

136 137

Ex. Calculate Av Ai and G Incorrect Q Point

Assume Ri = 1 KΩ for BE junction

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Incorrect Q Point Q Point

140 141

Too much drive… Thermal Runaway


 Power is dissipated in the collector and hence it is made
physically larger than the emitter and base region.
 As the power is dissipated the collector base junction
temperature increase.
 The reverse leakage current ICBO increases due to the
flow of thermally generated minority carriers

IC = α IE + ICBO

142 143

Emitter Degeneration with degenerative feedback


Thermal Runaway
 Process is cumulative leading
eventually to the destruction
of the transistor.
 Thermal runaway can be
prevented by using a heat
sink.
 Emitter degenerative
feedback can also be used.

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Collector-to-Base Bias/Collector Feedback bias Stability in Collector-to-Base Bias


• Biasing voltage is derived from
the voltage drop across the load
resistor RL
• If the load current increases,
there will be a larger voltage
drop across RL
• Reduced collector voltage, VC.
• Base current IB reduces in
turn
• IC is stabilized

146 147

Tutorial Question DC Analysis

DC voltage 0V
Amplitude 5 mV
Frequency 1 kHz

148 149

Input

Output

Emitter Voltage & Capacitor Current

150

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