TRIBHUVAN UNIVERSITY

INSTITUTE OF ENGINEERING
PASHCHIMANCHAL CAMPUS

A
Final Year Project Report
On

STATIC VAR COMPENSATOR

[Subject Code: EG777EE]

Submitted By:

GAGAN SHAH (BEL-067-213)

GANESH SAPKOTA (BEL-067-214)
MADHUSUDHAN PANDEY (BEL-067-223)
NARAYAN PRASAD KC (BEL-067-226)

KASKI, POKHARA, NEPAL

SEPTEMBER, 2014
 TRIBHUVAN UNIVERSITY
INSTITUTE OF ENGINEERING
PASHCHIMANCHAL CAMPUS

A
Final Year Project Report
On

STATIC VAR COMPENSATOR

[Subject Code: EG777EE]

Submitted By:
GAGAN SHAH (BEL-067-213)
GANESH SAPKOTA (BEL-067-214)
MADHUSUDAN PANDEY (BEL-067-223)
NARAYAN PRASAD KC (BEL-067-226)

A PROJECT WAS SUBMITTED TO THE DEPARTMENT OF ELECTRICAL

ENGINEERING IN PARTIAL FULLFILLMENT OF THE REQUIREMENT
FOR THE BACHELOR’S DEGREE IN ELECTRICAL

DEPARTMENT OF ELECTRICAL ENGINEERING

KASKI, POKHARA, NEPAL

SEPTEMBER, 2014
Scanned by CamScanner
 COPYRIGHT
The author has agreed that the Library, Department of Electrical Engineering,
Pashchimanchal Campus, Institute of Engineering may make this report freely
available for inspection. Moreover, the author has agreed that permission for
extensive copying of this project report for scholarly purpose may be granted by
the supervisors who supervised the project work recorded herein or, in their
absence, by the Head of the Department wherein the project report was done. It is
understood that the recognition will be given to the author of this report and to the
Department of Electrical Engineering, Pashchimanchal Campus, Institute of
Engineering in any use of the material of this project report. Copying or
publication or the other use of this report for financial gain without approval of to
the Department of Electrical Engineering, Pashchimanchal Campus, Institute of
Engineering and author’s written permission is prohibited.

Request for permission to copy or to make any other use of the material in this
report in whole or in part should be addressed to:

The Head

Department of Electrical Engineering

Pashchimanchal Campus, Institute of Engineering

Lamachaur, Pokhara

Nepal

ii
 ACKNOWLEDGEMENT

We would like to express our deepest appreciation to all those who provide us the
possibilities to complete this report. A special gratitude we give to our final year
project supervisor Er.Ishwor K.C. whose contribution in stimulating suggestion
and encouragement, helped us to coordinate our project specially writing this
report.

Furthermore we would like to acknowledge with much appreciation the crucial

role of the staff of the Electrical Department that provide the permission to use all
required equipments and the necessary materials to complete our project STATIC
VAR COMPENSATOR. Last but not the least, many thanks goes again to the
Head of the Project Supervisor Er. Ishowr K.C., who have invested his full effort
in guiding the team in achieving the goal. We have to appreciate the guidance
given by other supervisor as the panels specials in our project presentation and
documentation that has improved our presentation skills, problems tackling and
handling with best cares, thanks to their comment and advices.

We would not fulfill our appetite untill we provide best thanks and acknowledge
to the most and sensational part of engineering study provider our campus.

Project members

Gagan Shah

Ganesh Sapkota

Madhusudhan Pandey

Narayan Prasad K.C

iii
 ABSTRACT

The focus of this project has been on a particular FACTS (Flexible AC

Transmission System) device – the Static Var Compensator (SVC). The SVC is a
proven technology for power factor correction and reactive power compensation.
Traditionally the SVC has been used as a shunt-connected device that offers
voltage stability and load compensation to the power system at particular points
such as transmission line midpoints or near varying loads. Since EPRI’s (Electric
Power Research Institute) release of the FACTs strategies in 1987, SVC’s have
grown in popularity and are well regarded in the power industry. Besides there are
lots of areas that SVC’s importance, included viz: reduction in supply side
reactive burden, reduction in copper loss due to reduction of reactive current,
decrease in KVA loading of alternators, reduction in investment per KW of load
supplied, solution to Ferranti effect etc. and many more. For the use of SVC as
personal system basically at homes or at industries or at shopping mall or may be
at housing, the principle is the same and it include the facilities of providing good
power factor reducing cost of power consumption. Thus the focus of the report
mainly goes to good power factor correction and optimizing the use of SVC
specially in domestic loads.

iv
 TABLE OF CONTENTS
PAGE OF APPROVAL………………………………………………. i
COPYRIGHT…………………………………………………………. ii
ACKNOWLEDGEMENT…………………………………………….. iii
ABSTRACT…………………………………………………………… iv
TABLE OF CONTENT……………………………………………….. v
LIST OF FIGURES…………………………………………………… vi
LIST OF PICTURES………………………………………………….. vii
LIST OF TABLES…………………………………………………….. viii

1. INTRODUCTION…………………………………………….. 1
1.1 Background………………………………………………... 1
1.2 Objectives…………………………………………………. 2
2. LITERATURE REVIEW……………………………………... 3
3. SYSTEM METHODOLOGY…………………………………. 4
3.1 Overview…………………………………………………… 4
3.2 Block Diagram…………………………………………….. 5
3.3 Block Diagram Description………………………………... 5
3.4 Circuit Diagram……………………………………………. 6
3.5 Mathematical Analysis…………………………………….. 6
3.6 Algorithm………………………………………………….. 8
4. SYSTEM DESCRIPTION…………………………………….. 9
4.1 Hardware Components…………………………………….. 9
4.1.1 Arduino Uno……….………………………………. 10
4.1.2 LCD Module LM06L……………………………… 10
4.1.3 TRIAC…………………….……………………….. 11
4.1.4 Inductor…………………………………………….. 11
4.1.5 Capacitor……………..…………………………….. 12
4.1.6 ZCD Circuit for Voltage and Current…...…………. 12
4.1.7 Opto-isolator……………………………………….. 13
4.2 Software Components……………………………………… 13
4.2.1 Proteus……………………………………................ 13
4.2.2 MATLAB………………………………………....... 13
4.2.3 UNO ARDUINO Programmer 1.0.5……………….. 13
5. SYSTEM PROCESS…………………………………………… 14
5.1 Simulation and Proteus……………………………………... 14
5.2 Simulation and MATLAB………………………………….. 16
5.3 Controlling TRIAC Circuit…………………………………. 16

6. SCOPES AND APPLICATIONS………………………………. 19

7. RESULT……………………………………………………….. 20
8. REFERENCES………………………………………………… 21
9. APPENDIX

v
 LIST OF FIGURES

Page No.

Figure3.2: Block Diagram Of FC-TCR Type SVC 5

Figure 3.4: Circuit diagram Of FC-TCR 6

Figure 4.1.6: Zero Crossing Detecting Circuit 12

Figure 5.1.1: Simulation Of Power Factor Measurement in

Proteus 14

Figure 5.1.2: Current and Voltage ZCD as seen in Oscilloscope in

Proteus 15

Figure 5.2.1: Simulation Circuit In MATLAB 16

Figure 5.3.1: TRIAC Controlling Circuit 16

Figure 5.3.2: Firing With 1millisecond Delay 17

Figure 5.3.3: Firing With 6millisecond Delay 18

vi
 LIST OF PICTURES
Page No.

Picture 4.1 Arduino Uno…………………………………… 9

Picture 4.2 LCD module and its connection point………….… 10

Picture 4.3 TRIAC BTA-16 600B…………………………… 11

vii
 LIST OF TABLES
Page No.

Table 3.4: Power Factor And Firing Angle 7

viii
 CHAPTER 1

INTRODUCTION

1.1 Background:

SVC is generally a device of FACTS family regulating the voltage and unifying
the power factor too.

SVCs are used in two main situations:

1. Connected to the power system, to regulate the transmission voltage

("Transmission SVC").
2. Connected near large industrial loads, to improve power quality
("Industrial SVC").

Typically, an SVC comprises one or more banks of fixed or switched

shunt capacitors or reactors.

Elements which may be used to make an SVC typically include:

1. Thyristor control reactor (TCR)

2. Thyristor switched capacitor(TSC)

The main advantage of SVCs over simple mechanically-switched compensation

schemes is their near-instantaneous response to changes in the system voltage.

Our project is mainly based on domestic voltage to be controlled by compensating

the reactive power. The supply voltage would be 220 volts rms and this voltage is
regulated over the load. In conventional technique we use the transformer tapping
voltage regulator which basically maintain the voltage on the principle of auto
transformer and the concept of improving the power factor would be in vain for
this conventional purpose. But in case of SVC both voltage regulator and in
advance we achieved the power factor too.

1
1.2 Objectives

The main objective of the project is to maintain the unity power factor by the use
of SVC over industrial or domestic loads.The objectives can be described in
following point as:

 To optimize the operation of SVC at domestic level.

 To maintain the unity power factor of loads mainly inductive.
 To know basically operating principle of FC-TCR type SVC.
 To embedded controlling unit with SVC for its reliable, economic and
efficient operation.

2
 CHAPTER 2

LITERATURE REVIEW

SVC and its uses has grown tremendously after the use of reactive power
consuming devices in today’s mostly motor loads and industrial heating loads.
Generally SVC is used in the field of reactive power compensation for voltage
regulation and place at midpoint of transmission line.

For power factor correction we mainly think about absorbing reactive power for
leading load and generating reactive power by using lagging loads. Hence this can
be done by combination of capacitor and inductor. The concept is to make
variable capacitor for lagging loads like motor loads and to make variable inductor
for leading loads(generally domestic loads are not provided with leading loads) to
maintain power factor from no load to full load

Up to now we haven’t seen personalizing SVC at domestic loads for power factor
unifying. The case may be thinking of cost of SVC and its power electronics
control. But if we unify the power factor for industrial or domestic loads over long
range of period then the comparative cost of electricity bill and SVC would be
acceptable. The main problems is installation cost of SVC is very high than other
transformer tapping voltage regulator or bulk capacitor used for power factor
correction. But the operation of SVC can be optimize both economically and
efficiently by the use of power electronics device which has become backbone in
power system control.

3
 CHAPTER 3
SYSTEM METHODOLOGY
3.1 OVERVIEW

Basically in our project we are using SVC mainly for unifying power factor from
no load to full load for any combination of inductive loads like motors. Thus main
focus is to make a variable capacitor generating reactive power to compensate the
reactive power absorbed by inductive load like motor load. The variable capacitor
can be made by using the thyristor controlled reactor (TCR) and fixed capacitor
(FC) commonly known as FC-TCR type SVC.

For convenient and easy proposed we are mainly focusing of 1KW motor load and
controlling it power factor for no load to full load. A FC-TCR is used for
controlling reactive power to the motor load from no load to full load and its
power factor is nearly unified. The base value of inductor and capacitor to be
choose would be the challenging work , for this some mathematical analysis is to
be done, and it is done later.

4
3.2 BLOCK DIAGRAM

FC-TCR
Supply 1KW
unit CT Control Block motor

Unit
PT

Figure3.2: Block Diagram of FC-TCR type SVC

3.3 BLOCK DIAGRAM DISCRIPTION:

At first the current sensor and voltage sensor is feed to the control unit where zero
crossing detection of current and voltage waveform is done and using a suitable
timer used we then just calculate time difference between the Voltage zero
crossing and Current zero crossing to measure the power factor and depending on
this power factor value we trigger the TCR for required firing angle to compensate
reactive power for nearly unifying the power factor. FC-TCR unlike capacitor
banks acts as a variable capacitor.

5
3.4 CIRCUIT DIAGRAM:

Figure 3.4: Circuit diagram FC-TCR

In the above circuit diagram Qc is the reactive power generated by capacitor and
QL is the reactive power absorbed by inductor and combination of Qc and QL
forms a variable capacitor. The mathematical analysis is done below.

3.5 MATHEMATICAL ANALYSIS:

The simple mathematical analysis can be done for FC-TCR type SVC. It can be
done as follows:

FC: We know, Qc=Vs2/Xc =2202*2*3.14*50*C and assuming C=25µF we get

Qc=379.94 var.

π−α+0.5sin2α
TCR: We know, for thyristor control Ql=Vs2{ }*Xl also Q=Q c – Q l =
π

P(tanø-tanø0) where ø0=00 for unity power factor ,thus tanø0=0 assuming
L=70mH we get for solving Q=Q c – Q l cosø=cos[tan-1{48.4(314C-3.14-0.0174α
+0.5sin(0.034α))/985.54L)}]

6
Thus for different values of power factor we can find the value of alpha firing
angle to trigger the Triac used in TCR. The above equation is transcendental.
Thus we could not solve this equation easily so we may apply method of curve
fitting to a suitable degree.
The relation between alpha and power factor can be derived as from tabulating
different values of power factor for different firing angle and fitting to suitable
degree.
Table: 3.4

Power 0.48116 0.4946 0.5402 0.7182 0.9683 0.99941 0.9538 0.9408 0.934
factor 4

Firing angle 10 30 50 80 110 130 150 160 180

Fitting values of above datas in 6th degree of polynomial we get

α=(-0.1431z6-0.4796z5+2.7434z4-4.2342z3+2.9869z2-z+0.1294)* 105

where z= previous power factor and α is in degree.

Sample calculation:

For let us take pf=0.3 for no load of single phase ac motor than the firing angle for
this would be α = 8.36 degree (approx).

Similarly for pf=0.8 say at full load then firing angle would be α = 97.224 degree
(approx).

Hence at first the power factor is measured and the value of firing angle is set and
depending on the value of firing angle inductor current is varied and reactive
power for nearly unity is maintained.

7
3.6 ALGORITHM

The general algorithm can be step as:

Step 1. Measurement of initial reactive power consumed by load.

Step 2. Calculation of required triac gate pulse using arduino controller by coding.

Step 3. Generation of reactive power using FC-TCR by suitable firing angle.

Step 4. Displaying the VAR generated by FC-TCR for compensation of reactive

power in LCD module.

8
 CHAPTER 4

SYSTEM DESCRIPTION
4.1 Hardware Components

4.1.1 Arduino Uno:

Picture 4.1 Arduino Uno

In arduino uno we are provided with input and output port. To the input pin INTO
and INT1 we provide output of voltage and current zero crossing to measure the
existing power factor.

9
4.1.2LCD module LM06L:

Picture 4.2 LCD module and its connection point

The LCD module LM06L is used for the input output interface and the value of
power factor to be measured and reactive power to be compensated to unified the
power facter is displayed in real time

10
4.1.3 TRIAC:

Picture 4.3 TRIAC BTA-16 600B

A TRIAC basically consist of bidirectional thyristor used to control the value of

reactive power to be compensated for nearly unifying power factor. It is trigger
from the signal generated from arduino uno.

4.1.4 INDUCTOR:

For the use of inductor here we are using the fluorescent ballast of rating 220V,
40W pf=0.5. Under calculation of inductance value we get the value of inductor to
be 0.0922H ie.90mH. A TRIAC is used to control value of current through the
inductor.

11
4.1.5 CAPACITOR:

The capacitor used here is to generate the required reactive power to compensate
the reactive power needed for the inductive loads. By design consideration we
choose capacitor value to be 300µF. The combination of inductor and capacitor
acts as a variable capacitor and controlled by traic and thus the combination is
generally called as FC-TCR as used in SVC. The rating of capacitor is rated as
220,300 µF.

4.1.6 ZCD circuit for Voltage and Current:

Figure4.1.6: Zero Crossing Detector circuit

The zero crossing detection circuit is basically used for detection the current and
voltage zero crossing. The voltage and current is step down from PT and CT and
fed to the rectifier circuit where the signal rectifier glow the internal built LED of
optocoupler MCT2E. The glow of LED now ON the gate of phototransistor and
the zero crossing signal is obtained and fed to arduino.

12
4.1.7 OPTOISOLATOR:

The optoisolator is used for isolating the AC and DC side. We have used two type
of isolator as MCT2E and MOC3021 for isolating purpose. The datasheet of both
component is given in the appendix.

4.2 Software Components

4.2.1 Proteus:

We have used Proteus 7.7 for the purpose of simulation of electronic circuits like
ZCD, for currents and voltages and the power factor is measured by feeding
voltage and current zero crossing signals to the interrupt pin used in the circuits.
The time delay between current and voltage zero crossing gives the power factor.

4.2.2 MATLAB:

It is very comprehensive software used for modeling of every types of systems

like electrical system, hydraulic, mechanical, robotic, intelligence, etc. We have
used Simscape toolbox for modeling the SVC model.

4.2.3: Arduino Uno Programmer 1.0.5:

It is used for programming, the methods to control the triac signals for determing
the firing angle based on the previous value of power factor is programmed in the
controller and then pulse is generated . The program related to the measurement
and control of the gate signal is given in APPENDIX.

13
 CHAPTER 5

SYSTEM PROCESS

5.1 SIMULATION IN PROTEUS:

While simulating in proteus the complete circuit for the process of measuring
power facor shown below;

Figure 5.1.1: Simulation of power factor measurement in proteus

14
The current and voltage zero crossing signal is given below:

Figure5.1.2: Current and voltage ZCD as seen in oscilloscope in proteus

The upper triangular pulses shows the voltage zero crossing and the lower shows
the current zero crossing signal. Each pulse train generated at the difference of
10ms.

15
5.2 SIMULATION IN MATLAB:

The following circuit is simulated in MATLAB and the circuit response is viewed.

Figure 5.2.1: Simulation circuit in MATLAB

5.3 CONTROLLING TRAIC CIRCUITS:

Figure: 5.3.1 TRIAC CONTROLLING CIRCUIT

16
Figure5.3.2: Firing with 1ms delay i.e 180 for 50HZ system

17
Figure 5.3.3 firing with 6ms delay ie. Firing angle =1080

18
 CHAPTER 6

SCOPES AND APPLICATION

The main theme of our project is to optimize the use of SVC over the domestic
level and using it for both voltage regulation and power factor unitization, this
means we are replacing the transformer tapping voltage regulator by SVC and in
advance as a bonus point we are unifying the power factor too. Thus personalize
SVC can be used widely in domestic loads and in small scale industrial too.

Besides the SVC can be used for the practical purpose in laboratory and
demonstration of prototype of SVC model in any realm of power system and
control. This prototype can also be used for the controlling of reactive power for
leading loads which may not be available in the industrial load but may be
available at scientific research and exploration. Thus the use SVC can be made
coherence in the field of voltage regulation and power factor correction at
domestic and industrial level too.

19
 CHAPTER 7

RESULT

We are completely able to control the flow of reactive power through the
inductive load. For instant taking the motor of 1KW and controlling its power
factor from no load to full load the reactive power required to be compensated for
the unity power factor is achieved. Besides the problem is associated with the
misfiring of TCR results in two new points of firing angle that has to be solve by
using another thyristor switched capacitor (TSC). This increases the cost and the
control mechanism would be more complex. We have left is as it is. This scheme
of reactive power control is assumed to be economical than capacitor bank that
control the reactive power through the inductive load. We may produce this
scheme in industrial sector and can widely be used in the context of controlling
power factor and maintaining voltage level at domestic and industrial loads.

20
 REFERENCES

 M.H Rashid,Power Electronics:circuits,devices and applications.Third

edition,Delhi,Prentice Hall,2007
 A.Chakrabarti,M.L Soni,P.V. Gupta,U.S. Bhatnagar,A Text Book
On:Power System Engineering,Delhi,Dhanpat Rai and Co.,2011
 PC Sen, Power Electronics,New Delhi,Tata McGraw Hill,2001
 Silicon Valley Electronic Market Place, Retrieved
fromhttp://www.halted.com/ccp21558-hitachi-lcd-display-2x16-lm016l-
20626.htm
 Ventor Shop, Retrieved from
http://www.ventor.co.in/index.php?main_page=product_info&products_id
=270
 Thamid’s Blog:Microcontroller and Power Electronics , Retrieved from
http://tahmidmc.blogspot.com/2013/06/power-control-with-thyristor-
phase.html

21
APPENDIX
DATASHEET OF

1. MCT2E

2. MOC3021 AND

3. BTA16-600B

4. SOURCE CODE
4. SOURCE CODE:
#include <LiquidCrystal.h>

#include <math.h>

LiquidCrystal lcd(4, 5, 6, 7, 8, 9);

double star,fin,elapsed;

float pf,sine,var;

void setup()

pinMode(2,INPUT);

pinMode(3,INPUT);

pinMode(10,OUTPUT);

lcd.begin(16, 2);

lcd.print("corrected pf");

void start()

if(digitalRead(2))

star=millis();

void finish()

if(digitalRead(3))
{

fin=millis();

void loop()

if(attachInterrupt(0,start,FALLING))

if(attachInterrupt(1,finish,FALLING))

elapsed=fin-star;

pf=cos((10/180)*elapsed*3.14);

lcd.setCursor(0,1);

sine=sin(acos(pf));

var=220*4*sine;

lcd.print("VAR=");

lcd.setCursor(5,1);

lcd.print(var);

lcd.setCursor(9,1);

lcd.print("pf=");

lcd.setCursor(13,1);

lcd.print(pf,4);

}
VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry Standard Dual-in line 6-pin package A 1 6 B

• 5300 VRMS isolation test voltage C 2 5 C

NC 3 4 E
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending i179004

Available with Option 1

• CSA 93751 DIN EN 60747-5-5 pending partial discharge isolation

• BSI IEC60950 IEC60965 specification is available for these families by ordering
option 1.
Applications These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
AC mains detection
mance available for a commercial plastic phototrans-
Reed relay driving istor optocoupler.
Switch mode power supply feedback The devices are available in lead formed configura-
Telephone ring detection tion suitable for surface mounting and are available
Logic ground isolation either on tape and reel, or in standard tube shipping
Logic coupling with high frequency noise rejection containers.

Description Footnotes
Standard Single Channel Phototransistor Couplers. Designing with data sheet is covered in Application Note 45.
The MCT2/ MCTE family is an Industry Standard Sin-
gle Channel Phototransistor .
Order Information
Each optocoupler consists of gallium arsenide infra-
Part Remarks
red LED and a silicon NPN phototransistor.
MCT2 CTR 60 (> 20) %, DIP-6
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test volt- MCT2E CTR 60 (> 20) %, DIP-6
age. MCT2-X009 CTR 60 (> 20) %, SMD-6 (option 9)
This isolation performance is accomplished through For additional information on the available options refer to
Vishay double molding isolation manufacturing pro- Option Information.
cess. Compliance to DIN EN 60747-5-2(VDE0884)/

Document Number 83731 www.vishay.com

Rev. 1.3, 19-Apr-04 1
MCT2/ MCT2E VISHAY
Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current t ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW

Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown VCEO 70 V
Emitter-base breakdown BVEBO 7.0 V
voltage
Collector current IC 50 mA
t < 1.0 ms IC 100 mA
Power dissipation Pdiss 150 mW

Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index per 175
DIN IEC 112/VDE0303,part 1
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tstg - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature max. 10 s dip soldering: Tsld 260 °C
distance to seating plane
≥ 1.5 mm

www.vishay.com Document Number 83731

2 Rev. 1.3, 19-Apr-04
VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF 1.1 1.5 V

Reverse current VR = 3.0 V IR 10 µA

Capacitance VR = 0, f = 1.0 MHz CO 25 pF

Output
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter breakdown IC = 1.0 mA, IF = 0 mA BVCEO 30 V
voltage
Emitter-collector breakdown IE = 100 µA, IF = 0 mA BVECO 7.0 V
voltage
Collector-base breakdown IC = 10 µA, IF = 0 mA BVCBO 70 V
voltage
Collector-emitter leakage VCE = 10 V, IF = 0 mA ICEO 5.0 50 nA
current
Collector-base leakage current VCE = 10 V, IF = 0 mA ICBO 20 nA
Collector-emitter capacitance VCE = 0 CCE 10 pF

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Resistance, input to output RIO 100 GΩ
Capacitance (input-output) CIO 0.5 pF

Current Transfer Ratio

Parameter Test condition Symbol Min Typ. Max Unit
DC Current Transfer Ratio VCE = 10 V, IF = 10 mA CTRDC 20 60 %

Document Number 83731 www.vishay.com

Rev. 1.3, 19-Apr-04 3
MCT2/ MCT2E VISHAY
Vishay Semiconductors

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Switching time IC = 2 mA, RL = 100 Ω, ton, toff 10 µs
VCE = 10 V

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C

NCTR - Normalized CTR

TA = –55°C CTRce(sat) Vce=0.4 V
VF - Forward Voltage - V

1.2
1.0
TA = 25°C TA=50°C
1.1

1.0
0.5
0.9 TA = 85°C
NCTR(SAT)
0.8 NCTR

0.7 0.0
.1 1 10 100
.1 1 10 100
IF - Forward Current - mA IF- LED Current - mA
i4n25_01 i4n25_03

Fig. 1 Forward Voltage vs. Forward Current Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED
Current

1.5 1.5
Normalized to: Normalized to:
Vce=10 V, IF=10 mA, TA=25°C Vce=10 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce=0.4 V CTRce(sat) Vce=0.4 V

NCTR - Normlized CTR

1.0 1.0
TA=25°C TA=70°C

0.5
0.5
NCTR(SAT)
NCTR(SAT) NCTR
NCTR 0.0
0.0 .1 1 10 100
0 1 10 100 IF - LED Current - mA
IF - LED Current - mA
i4n25_02 i4n25_04

Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Fig. 4 Normalized Non-saturated and saturated CTR vs. LED
Current Current

www.vishay.com Document Number 83731

4 Rev. 1.3, 19-Apr-04
VISHAY
MCT2/ MCT2E
Vishay Semiconductors

1.5 1.5
Normalized to: Normalized to:

NCTRcb - Normalized CTRcb

Vce=10 V, IF=10 mA, TA=25°C Vcb=9.3 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce = 0.4 V

1.0 1.0
TA=85°C

0.5 0.5
25°C
NCTR(SAT) 50°C
NCTR 70°C

0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08

Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Fig. 8 Normalized CTRcb vs. LED Current and Temp.
Current

35 10
Normalized to:
30 IF=10 mA, TA=25°C
Ice - Collector Current - mA

Normalized Photocurrent

25
50°C 1
20
70°C
15
25°C 85°C
10 0.1
Nib, TA=–20°C
5 Nib, TA= 25°C
Nib, TA= 50°C
0 Nib, TA= 70°C
0 10 20 30 40 50 60 0.01
IF - LED Current - mA .1 1 10 100
i4n25_06 i4n25_09 IF - LED Current - mA

Fig. 6 Collector-Emitter Current vs. Temperature and LED Fig. 9 Normalized Photocurrent vs. IF and Temp.
Current

5 1.2
10 70°C
4
Iceo - Collector-Emitter - nA

10
NHFE - Normalized HFE

3 1.0
10 25°C
2 –20°C
10
0.8
1 Vce = 10 V
10
Typical Normalized to:
10 0 Ib=20 µA, Vce=10 V, TA=25°C
0.6
10 –1

10 –2
–20 0 20 40 60 80 100 0.4
1 10 100 1000
TA - Ambient Temperature - °C Ib - Base Current - µA
i4n25_07 i4n25_10

Fig. 7 Collector-Emitter Leakage Current vs.Temp. Fig. 10 Normalized Non-saturated HFE vs. Base Current and
Temperature

Document Number 83731 www.vishay.com

Rev. 1.3, 19-Apr-04 5
MCT2/ MCT2E VISHAY
Vishay Semiconductors
NHFE(sat) - Normalized Saturated HFE

1.5
Normalized to:
Vce=10 V, Ib=20 µA VCC = 5.0 V
70°C 50°C T A =25°C
1.0
F=10 KHz, RL
25°C DF=50%

–20°C VO
0.5
IF=1 0 mA
Vce=0.4 V

0.0
1 10 100 1000
i4n25_11 Ib - Base Current - µA i4n25_14

Fig. 11 Normalized HFE vs. Base Current and Temp. Fig. 14 Switching Schematic

1000 2.5
IF =10 mA,TA=25°C
tPHL - Propagation Delay - µs
tPLH - Propagation Delay - µs

VCC =5.0 V, Vth=1.5 V

tPHL
100 2.0

10 1.5
tPLH

1 1.0
.1 1 10 100
RL - Collector Load Resistor - kΩ
i4n25_12

Fig. 12 Propagation Delay vs. Collector Load Resistor

IF

tD
VO tR
tPLH

VTH=1.5 V

tPHL tS tF

i4n25_13

Fig. 13 Switching Timing

www.vishay.com Document Number 83731

6 Rev. 1.3, 19-Apr-04
VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID
3 2 1

.248 (6.30)
.256 (6.50)

4 5 6 ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004

Package Dimensions in Inches (mm)

SMD
.343 (8.71)
.335 (8.51) Pin one I.D.

.030 (.76)

.256 (6.50) R .010 (.25)

.100 (2.54)
.248 (6.30)
.070 (1.78)
.315 (8.00) min .060 (1.52)
.435 (11.05)

.050 (1.27) typ.

ISO Method A .395 (10.03)
.375 (9.63)
.052 (1.33)
.039 .300 (7.62) 3° to 7°
.048 (1.22) typ.
(0.99)
min. .150 (3.81)
.130 (3.30) .0098 (.25)
.0040 (.10) 18°
4°
.040 (1.016) .012 (0.31)
.100 (2.54) .008 (0.20)
.020 (0.508) .315 (8.00)
i178002 min.

Document Number 83731 www.vishay.com

Rev. 1.3, 19-Apr-04 7
MCT2/ MCT2E VISHAY
Vishay Semiconductors

Option 9
.375 (9.53)
.395 (10.03)

.300 (7.62)
ref.

.0040 (.102)
.0098 (.249) .012 (.30) typ.

.020 (.51)
.040 (1.02)
15° max.
.315 (8.00)
min. 18449

www.vishay.com Document Number 83731

8 Rev. 1.3, 19-Apr-04
VISHAY
MCT2/ MCT2E
Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83731 www.vishay.com

Rev. 1.3, 19-Apr-04 9
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

 GlobalOptoisolator  
    
    " ! !  
(400 Volts Peak)
The MOC3020 Series consists of gallium arsenide infrared emitting diodes,
optically coupled to a silicon bilateral switch.
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
They are designed for applications requiring isolated triac triggering.
Recommended for 115/240 Vac(rms) Applications:
6
• Solenoid/Valve Controls • Static ac Power Switch 1
• Lamp Ballasts • Solid State Relays STANDARD THRU HOLE
• Interfacing Microprocessors to 115 Vac Peripherals • Incandescent Lamp Dimmers
• Motor Controls

SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
1 6
Rating Symbol Value Unit
INFRARED EMITTING DIODE
2 5
Reverse Voltage VR 3 Volts
Forward Current — Continuous IF 60 mA 3 4
Total Power Dissipation @ TA = 25°C PD 100 mW
Negligible Power in Triac Driver 1. ANODE
Derate above 25°C 1.33 mW/°C 2. CATHODE
3. NC
OUTPUT DRIVER 4. MAIN TERMINAL
Off–State Output Terminal Voltage VDRM 400 Volts 5. SUBSTRATE
5. DO NOT CONNECT
Peak Repetitive Surge Current ITSM 1 A 6. MAIN TERMINAL
(PW = 1 ms, 120 pps)
Total Power Dissipation @ TA = 25°C PD 300 mW
Derate above 25°C 4 mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1) VISO 7500 Vac(pk)
(Peak ac Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation @ TA = 25°C PD 330 mW
Derate above 25°C 4.4 mW/°C
Junction Temperature Range TJ – 40 to +100 °C
Ambient Operating Temperature Range TA – 40 to +85 °C
Storage Temperature Range Tstg – 40 to +150 °C
Soldering Temperature (10 s) TL 260 °C
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

1
 MOC3021, MOC3022, MOC3023

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
INPUT LED
Reverse Leakage Current IR — 0.05 100 µA
(VR = 3 V)
Forward Voltage VF — 1.15 1.5 Volts
(IF = 10 mA)
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
Peak Blocking Current, Either Direction IDRM — 10 100 nA
(Rated VDRM(1))
Peak On–State Voltage, Either Direction VTM — 1.8 3 Volts
(ITM = 100 mA Peak)
Critical Rate of Rise of Off–State Voltage (Figure 7, Note 2) dv/dt — 10 — V/µs
COUPLED
LED Trigger Current, Current Required to Latch Output IFT mA
(Main Terminal Voltage = 3 V(3)) MOC3021 — 8 15
MOC3022 — — 10
MOC3023 — — 5
Holding Current, Either Direction IH — 100 — µA
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load–driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max
3. IFT (15 mA for MOC3021, 10 mA for MOC3022, 5 mA for MOC3023) and absolute max IF (60 mA).

TYPICAL ELECTRICAL CHARACTERISTICS

TA = 25°C

2 +800
VF, FORWARD VOLTAGE (VOLTS)

ITM , ON-STATE CURRENT (mA)

1.8
PULSE ONLY +400
PULSE OR DC
1.6
0
1.4

TA = –40°C –400
1.2
25°C

1 85°C –800
1 10 100 1000 –3 –2 –1 0 1 2 3
IF, LED FORWARD CURRENT (mA) VTM, ON–STATE VOLTAGE (VOLTS)

Figure 1. LED Forward Voltage versus Forward Current Figure 2. On–State Characteristics
 MOC3021, MOC3022, MOC3023
1.4 25

IFT, NORMALIZED LED TRIGGER CURRENT

IFT, TRIGGER CURRENT – NORMALIZED

1.3
NORMALIZED TO:
1.2
20
q
PWin 100 µs

1.1
15
1

0.9 10

0.8
5
0.7

0.6 0
–40 –20 0 20 40 60 80 100 1 2 5 10 20 50 100
TA, AMBIENT TEMPERATURE (°C) PWin, LED TRIGGER WIDTH (µs)

Figure 3. Trigger Current versus Temperature Figure 4. LED Current Required to Trigger
versus LED Pulse Width

12 100

STATIC dv/dt
I DRM, LEAKAGE CURRENT (nA)

10
CIRCUIT IN FIGURE 7
dv/dt, STATIC (V/ µs)

6 10

0
25 30 40 50 60 70 80 90 100 1
– 40 – 30 – 20 –10 0 10 20 30 40 50 60 70 80
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 5. dv/dt versus Temperature Figure 6. Leakage Current, IDRM
versus Temperature

+400
Vdc RTEST 1. The mercury wetted relay provides a high speed repeated
R = 10 kΩ pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
PULSE CTEST 3. The worst–case condition for static dv/dt is established by
INPUT MERCURY triggering the D.U.T. with a normal LED input current, then
X100
WETTED removing the current. The variable RTEST allows the dv/dt to be
SCOPE
RELAY D.U.T. gradually increased until the D.U.T. continues to trigger in
PROBE
response to the applied voltage pulse, even after the LED
current has been removed. The dv/dt is then decreased until
the D.U.T. stops triggering. tRC is measured at this point and
recorded.

Vmax = 400 V
APPLIED VOLTAGE
WAVEFORM 252 V

0 VOLTS ń + 0.63 RCVmax + 252

dv dt
RC
t t
tRC

Figure 7. Static dv/dt Test Circuit

 MOC3021, MOC3022, MOC3023

Rin 1 6 360 470

VCC HOT
MOC
2 3021/ 5
0.05 µF 39 240
3022/ VAC
3 3023 4
0.01 µF

LOAD GROUND

* This optoisolator should not be used to drive a load directly. It is in-
tended to be a trigger device only.
Additional information on the use of optically coupled triac
drivers is available in Application Note AN–780A.
In this circuit the “hot” side of the line is switched and the
load connected to the cold or ground side.
The 39 ohm resistor and 0.01 µF capacitor are for snub-
bing of the triac, and the 470 ohm resistor and 0.05 µF ca-
pacitor are for snubbing the coupler. These components
may or may not be necessary depending upon the particu-
lar triac and load used.

Figure 8. Typical Application Circuit

 MOC3021, MOC3022, MOC3023

PACKAGE DIMENSIONS

–A–
NOTES:
6 4 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B– 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
1 3 FORMED PARALLEL.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
F 4 PL C L A 0.320 0.350 8.13 8.89
N B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
–T– K G 0.100 BSC 2.54 BSC
SEATING J 0.008 0.012 0.21 0.30
PLANE
G J 6 PL K 0.100 0.150 2.54 3.81
L 0.300 BSC 7.62 BSC
M 0.13 (0.005) M T B M A M
M 0_ 15 _ 0_ 15 _
E 6 PL
N 0.015 0.100 0.38 2.54
D 6 PL
0.13 (0.005) M T A M B M STYLE 6:
PIN 1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL

THRU HOLE

–A–

6 4
–B– S NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
1 3
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
L DIM MIN MAX MIN MAX
F 4 PL
H A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
C D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
–T– F 0.010 0.014 0.25 0.36
G G 0.100 BSC 2.54 BSC
J SEATING
H 0.020 0.025 0.51 0.63
PLANE
E 6 PL K 6 PL J 0.008 0.012 0.20 0.30
K 0.006 0.035 0.16 0.88
D 6 PL 0.13 (0.005) M T B M A M
L 0.320 BSC 8.13 BSC
S 0.332 0.390 8.43 9.90
0.13 (0.005) M T A M B M

SURFACE MOUNT
 MOC3021, MOC3022, MOC3023

–A– NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6 4 3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
–B–
1 3 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
L C 0.115 0.200 2.93 5.08
F 4 PL N D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
C G 0.100 BSC 2.54 BSC
J 0.008 0.012 0.21 0.30
–T– K 0.100 0.150 2.54 3.81
SEATING L 0.400 0.425 10.16 10.80
PLANE G N 0.015 0.040 0.38 1.02
K J
D 6 PL
E 6 PL 0.13 (0.005) M T A M B M

0.4" LEAD SPACING

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation

 TM
BTA16-600B
HPM Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

Glass passivated triacs in a plastic envelope, intended for use in applications requiring high
bidirectional transient and blocking voltage capability and high thermal cycling performance.
Typical applications include motor control, industrial and domestic lighting,heating and static switching.

Symbol Simplified outline

Applications:
T2 T1
Motor control
Industrial and domestic lighting
G 12
3 Heating
TO-220
Static switching
Pin Description
1 Main terminal 1 (T1)
Features
2 Main terminal 2 (T2) Blocking voltage to 600 V
3 gate (G) On-state RMS current to 16 A

TAB Main terminal

SYMBOL PARAMETER Value Unit

V DRM Repetitive peak off-state voltages 600 V

IT RMS RMS on-state current full sine wave 16 A

Non-repetitive peak on-state current
I TSM 168 A
(full cycle,Tj initial=25 )

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

R th( j-c) Junction to case(AC) - 2.1 - /W

R th( j-a) Junction to ambient - 60 - /W

http://www.haopin.com 1/5
 TM
BTA16-600B
HPM Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL PARAMETER CONDITIONS MIN Value UNIT
Repetitive peak off-state -
V DRM 600 V
Voltages
I T(RMS) RMS on-state current T c=85 - 16 A
F=50H Z t=20ms - 160 A
Non repetitive surge Tj initial =25
I TSM peak on-state current F=60H Z t=16.7ms - 168 A
2
It 2
I t value for fusing T p=10ms - 144
2
AS

Critical rate of rise of F=120H Z Tj=125 -

dI/dt I G=2 I GT , tr 100ns 50 A/ s
on-state current

I GM Peak gate current Tp=20 s Tj=125 - 4 A

I DRM V DRM=V RRM Tj=25 - 5 A
I RRM V DRM=V RRM Tj=125 - 2 mA
P G(AV) Average gate power Tj=125 - 1 W
T stg Storage temperature range -40 150
Operating junction
Tj Temperature range
-40 125

T J=25 OC unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Static characteristics
I GT V D=12V; R L=33
I-II-III - - 50 mA

IV 100 mA

IL I G=1.2 I GT
I-III-IV - - 60 mA
II - - 120 mA

IH I T=500mA - - 50 mA
V GT V D=12V; R L=33 ALL - - 1.3 V
V GD V D=V DRM R L=3.3K Tj=125 ALL 0.2 - - V

dV/dt V D=67%V DRM gate open;T J=125 400 - - V/ s

(dV/dt)c (dI/dt)c=7A/ms T J=125 10 - - V/ s

Dynamic Characteristics
V TM l TM=22.5A tp=380 s T J=25 - - 1.55 V
V to Threshold voltage T J=125 - - 0.85 V
Rd Dynamic resistance T J=125 - - 25 m

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 TM
BTA16-600B
HPM Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTA16-600B
HPM Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

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 TM
BTA16-600B
HPM Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 2g

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