Packaging Trends and Challenges For Power Devices

Device Packaging 2019 - Fountain Hills, AZ USA - March 4-7, 2019
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Packaging Trends and
Challenges for Power Devices
E. Jan Vardaman
President and Founder
000706
© 2018 TechSearch International, Inc.
IGBTs and MOSFETs

Source: Mitsubishi Electric.
• Power devices in a variety of application ranges

– Insulated Gate Bipolar Transistor (IGBT)
– Metal-Oxide Semiconductor Field-effect transistor (MOSFET)
000707
Growing Number of Applications for Power Devices

• Energy infrastructure and storage
• Electric and hybrid vehicles, EV
charging
• Transportation
• Datacenters
• Industrial
• Smart cities and buildings
• Home appliances
000708
Power Devices for Solar Power and Energy Storage

Examples of semiconductors for
energy infrastructure
• In EV charging stations
– IGBTs
– SJ MOSFETs
– HV GaN transistors
– HV Si/SiC rectifiers
– 1200 volt IGBT PIMs
– SiC MOSFET PIMs
• In solar power supplies,
battery interface, Source: ON Semiconductor.
uninterruptible power supplies
– HV PFC/PWM controllers
– PFC modules
– Half-bridge drivers
– Opto-couplers
– Galvanic isolation
000709
Infineon HybridPACK 2 Module

• One module per EV
000710
Wide Band Gap Applications


Source: ON Semiconductor.
• Growing demand for power devices…..

• Si-based devices well established
• Wide Band Gap materials such as SiC and GaN are gaining momentum
• WBG materials such as SiC and GaN have inherently superior properties that allow them to
be used at higher voltages, frequencies, and temperatures
000711
Applications for SiC Power Devices

Source: TechSearch International, Inc. adapted from Global Power Technology.
• SiC devices are found in range of applications

• An increasing number of companies are offering SiC-based power devices
including: CENGOL, Denso, Fuji Electric, Global Power Technology, Infineon,
Littelfuse, Mitsubishi, ON Semiconductor, ROHM, Sanken, SEMIKRON,
STMicroelectronics, Toshiba, Toyota,000712
and Wolfspeed/Cree
Many Types of Power Device Packages

Source: Texas Instruments.
Source: Indium.
Source: Toyota Motor.
• Common leadframe packages for power devices

– TO, Power SO/Thermally Enhanced SO, Power QFN, intelligent power module (IPM)
• Growth in packages including Cu clip
• Emerging use of embedded die packages
000713
Examples of Leadframe Packages for Wide Band Gap

Current Discrete
Company Wide Band Gap Device
Package Offering
SiC SBD TO220, 247, 252, 263
CENGOL (China)
SIC MOSFETs TO247
Exagan (France) GaN transistor PQFN
Fuji Electric (Japan) SiC SBD TO220, 247, TPack
GaN Systems (Canada) GaN HEMT QFN with Cu Clip

Global Power Technology
SiC SBD TO220, 247
(China)
Littelfuse/IXYS/Monolith
SiC SBD TO220, 247
Semiconductor (U.S.)
SiC SBD TO220, 263
ROHM Semiconductor (Japan)
SiC MOSFET TO3, 220, 247, 268
Sanken Semiconductors
SiC SBD TO220
(Japan)
SinoPower Semiconductor
GaN power transistor TO220
(China)
Texas Instruments (U.S.) GaN FET QFN
Toshiba (Japan) SiC MOSFET SO, TO-based with Cu Clip
Transphorm (U.S.) GaN FET TO220, 247

SiC MOSFET TO220, 263
Wolfspeed/Cree (U.S.)
SiC SBD TO220, 257, 252
000714
Multi-Die Cu Clip Power Packages

Discrete Cu Clip QFN Stacked Cu Clip Module QFN Stacked Cu Clip Dual-Die QFN
Source: UTAC.
• Combines MOSFETs in a package with driver

• Provide higher power performance, high current density, improved thermal
management
– Lower resistance, lower inductance, higher current carrying capability than other WB packages
– Lower static drain-source on-resistance (total resistance between drain and source)
• Side-by-side or stacked
• IDMs and OSATs (Amkor, ASE, Carsem, Cirtek, GASTECH, GEM, Great Team, Hana
Microelectronics, IMI (PSi), Team Pacific, TFME, UTAC)
000715
Advantages of Embedded Components

• Increased packaging density (z-height
reduction enables reduce board thickness and
lower profile package)
• Minimization of parasitic inductance
• Low-impedance power distribution
• Reduced noise, EMI, and cross-talk
• Improvement of signal routing by elimination
SMT vias
• Improved reliability through the elimination of
solder joints
• Weight reduction
• Improved thermal performance
• Potentially lower assembly cost
• RF shielding
000716
ASE a-EASI™ Product Examples


Source: ASE.
• Multi-die structure include 2 power MOSFETs plus 1 driver for a Blade server
application
– Connections from the PCB pad to the gate and source pad on the MOSFET side are
made by Cu filled microvias directly plated onto the Cu-finished die pads
– With the cavity structures the microvias have approximately the same depth,
simplifying the laser drill process
• ASE is also working with customers on WBG materials such as GaN
000717
a-EASI™ Electrical Performance Compared to QFN

Source: ASE.
• Ultra low resistance and inductance result in highest power efficiency

• Good thermal performance
000718
ACCESS Embedded Die Package Example

DC-DC Converter
2-layer single-die embedded µSiP
 1.5mm ultra thin package including top inductor

 3∼17V stable output 3A current
 0.6-5V adjustable output voltage
 –40∼125℃ stable working temperature
 MSL-2
In high volume manufacturing
Source: ACCESS Semiconductor.
000719
AT&S 2kW Power Inverter with Embedded Transistors

• 6 layer board
• 32 embedded GaN-on-Si transistors
embedded on 2 layers
• Box size: 7.5 cm x 3.8 cm x 4.5 cm
• Developed by AT&S and a technical
college in Kapfenberg
Source: AT&S.
000720
GE Power Overlay (POL) Module

• GE acquired Imbera Electronics in
September 2013
• Technology licensed to
– Shinko Electric
– Taiyo Yuden
– Flexceed
– TDK
• High-power density modules for
solar, wind, and avionics applications
– Digital to high-voltage (>1200V)
– High-power (>120A)
– SiC a) Back view of module before DBC assembly.
b) Front view of module after DBC assembly.
• Test module
– 50µm thick polyimide film
– 15µm thick die-attach adhesive
– 100µm thick finished Cu plating
– 43mm x 24mm DBC
– Laser vias connect chips and Cu traces
– Via diameters of 750µm and 400µm
Source: GE.
000721
Schweizer’s p² Pack Embedded Technology


• First generation of p² Pack is based on low-voltage MOSFETs from Infineon
specifically designed for embedding in an under-the-hood automotive application
– Packaging in a leadframe and testing prior to embedding solves the potential
problem of KGD
– Low inductance enables faster switching and offers a potential reduction in the
size of passive components, and therefore the cost
– Lower parasitic inductance also allow the use of lower voltage devices (450 V
instead of 650 V for IGBTs), because overvoltage is reduced
– RDSon of the components could be reduced by approximately 30%, increasing
energy efficiency and reducing cooling requirements
• Next generation of p² Pack for WBG (SiC and GaN) is under development
– Low inductance is an advantage of the package
– Active load cycling can be improved by a factor of 10 compared with
conventional wire bonded power modules on DCB substrates
000722
Drivers for New Die Attach Materials for Power Semiconductors

• Si-based semiconductors
– Operating junction temperature exceeding 150°C
– Pb-free solders and electrically conductive adhesives (ECAs) do not perform well
past these temperatures
• Wide Band Gap materials (SiC and GaN) pushing operating junction
temperatures to 175°C and beyond
• These trends are driving the need for higher-performance die attach
materials
175˚C 200˚C
Si-Power CMOS GaN, SiC
000723
Pb-Free Requirements = Need For New Die Attach Materials

• Today’s PbSn5 or PbSn2Ag2.5 used for die attach application because
– No re-melting during PCB reflow process
– Excellent wettability
– Reliability due to ductility
• No alternative drop-in solution is available, but companies are investigating
potentials
• Reliability requirements for new materials
– AEC-Q100/Q101 Grade 0
– Typical T junction 175°C max, up to 200°C
– Thermal/electrical properties same or better than existing solutions with Pb-solder
– Reflow 260°C (SMD) and moisture sensitivity level (MSL3) or better for surface mount
devices
– Wire bonding temperature up to 200°C
– Well understood physics of failure
Source: DA5 consortium 7/18.
000724
Update on Pb-Free Legislation

• European End-of-Life Vehicle (ELV) Directive (200/53/EG) mandates conversion to
environmentally friendly materials
– Exemption may be cancelled if an alternative is available and proven
• European RoHS Directive (2011/65/EU) restricts the use of hazardous substances in
electrical and electronic equipment
– RoHS exemptions allow temporary use of restricted substrates (see Annex III in 2011/65/EU
(RoHS-2) for exemptions
– RoHS II recast went into force July 1, 2011
– Industry associations consortia (34 associations) sent an extension dossier regarding
exemption 7a to the EU commission on January 16, 2015
– Revision process is finished (regarding 7a) and the EU commission and EU Parliament decided
to extend the exemption to July 2021 using the same wording
– Exemption 7a (Pb in high temperature melting solders) valid until mid 2021 will automatically
extend until EU commission decides on running exemption extension process starting
January 2020 at the latest
• EU companies are not waiting for legislation, but are seeking alternatives
– Thus far, no commercially available alternative has been developed
000725
Many Companies Developing Advanced Die Attach Materials

• Alpha Advanced Materials
• Bando Chemical
• Dowa Electronics Materials
• EMD Performance Materials
• Engineered Materials Systems/Nagase
ChemteX
• Henkel
• Hereaus
• Hitachi Chemical
• Indium
• Kyocera
• Kuprion
• Mitsui Mining & Smelting
• NAMICs
• Napra
• Nihon Handa
• Nihon Superior
• Senju Metal Industry
• Tanaka Denshi Kogyo
• YOUR NAME HERE
000726
Conclusions

• Growing market for power devices
– Power devices are everywhere!
• Silicon-based power devices represent major part of market, but WBG materials
such as SiC and GaN increasingly being used
• Enhanced thermal management for increased power density required for power
packages
– Drive new cooling methods
– New packages such as embedded die
• Assembly methods incorporating new materials are increasingly important
– Pb-free die attach developments
– Cu-clip packages
000727

Thank you!
TechSearch International, Inc.

4801 Spicewood Springs Road, Suite 150
Austin, Texas 78759 USA
+1.512.372.8887
tsi@techsearchinc.com
000728

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Device Packaging 2019 - Fountain Hills, AZ USA - March 4-7, 2019

Visit www.imapsource.org for more IMAPS papers

Downloaded from http://meridian.allenpress.com/imaps-conferences/article-pdf/2019/DPC/000706/2460827/2380-4491-2019-dpc-gbc2_techsearch.pdf by guest on 03 January 2023

IGBTs and MOSFETs

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• Power devices in a variety of application ranges

Growing Number of Applications for Power Devices

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Power Devices for Solar Power and Energy Storage

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Infineon HybridPACK 2 Module

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Wide Band Gap Applications

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• Growing demand for power devices…..

Applications for SiC Power Devices

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• SiC devices are found in range of applications

Many Types of Power Device Packages

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Source: Toyota Motor.

• Common leadframe packages for power devices

Examples of Leadframe Packages for Wide Band Gap

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Fuji Electric (Japan) SiC SBD TO220, 247, TPack

GaN Systems (Canada) GaN HEMT QFN with Cu Clip

Toshiba (Japan) SiC MOSFET SO, TO-based with Cu Clip

Transphorm (U.S.) GaN FET TO220, 247

Multi-Die Cu Clip Power Packages

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• Combines MOSFETs in a package with driver

Advantages of Embedded Components

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ASE a-EASI™ Product Examples

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a-EASI™ Electrical Performance Compared to QFN

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• Ultra low resistance and inductance result in highest power efficiency

ACCESS Embedded Die Package Example

Downloaded from http://meridian.allenpress.com/imaps-conferences/article-pdf/2019/DPC/000706/2460827/2380-4491-2019-dpc-gbc2_techsearch.pdf by guest on 03 January 2023

 1.5mm ultra thin package including top inductor

In high volume manufacturing

Source: ACCESS Semiconductor.

AT&S 2kW Power Inverter with Embedded Transistors

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GE Power Overlay (POL) Module

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Schweizer’s p² Pack Embedded Technology

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Drivers for New Die Attach Materials for Power Semiconductors

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Pb-Free Requirements = Need For New Die Attach Materials

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Source: DA5 consortium 7/18.

Update on Pb-Free Legislation

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Many Companies Developing Advanced Die Attach Materials

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