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Adsorption Mechanism of Decomposition
Adsorption Mechanism of Decomposition
Adsorption Mechanism of Decomposition
Vacuum
journal homepage: http://www.elsevier.com/locate/vacuum
A R T I C L E I N F O A B S T R A C T
Keywords: The decomposition gas of SF6 circuit breaker adsorbed on MOF-505 analogue had been analyzed and studied in
MOF-505 analogue this paper by using the first principles of density functional theory (DFT) to analyze adsorption mechanism. The
DFT adsorption structures of organic ligands and metal sites were established and optimized. Through analyzing the
Adsorbent
adsorption energy, adsorption distance difference, charge transfer, density of states, Charge density difference
gas adsorption mechanism
and electron localization function, the results show that organic ligands and metal sites have excellent adsorption
effect on H2S and SO2, belonging to chemical adsorbent, and the adsorption capacity is far greater than that of
SF6. The MOF-505 analogue will be a potential adsorbent for the fault recovery of SF6 circuit breaker.
* Corresponding author.
E-mail address: zspswu@126.com (S. Zhu).
https://doi.org/10.1016/j.vacuum.2020.109816
Received 15 July 2020; Received in revised form 25 September 2020; Accepted 26 September 2020
Available online 8 October 2020
0042-207X/© 2020 Elsevier Ltd. All rights reserved.
Table 1 Where EMOF/gas denotes the total energy of MOF materials after
The structural parameters of H2S, SO2, SF6. adsorbing gas, and EMOF and Egas means the total energy of MOF material
Gas Bond Length(Å) Bond Angle(◦ ) and gas molecules, respectively.
Type Length Type Angle
The charge transfer (Qt) was calculated by equation (2) [42,43]:
The composition parts of MOF-505 analogue are shown in Fig. 2. In Where dafter and dbefore represent the value of adsorption distance before
light of the published MOF-505-based literature [25–27], the con and after adsorption, respectively.
structed shuttle MOF-505 crystal model is an analog of MOF-505. Its
organic ligand is formed by three benzene rings connected by carbon 3. Results and discussion
atoms with four carboxyl groups at the unsaturation of two benzene
rings on the side, where the four carboxyl groups are separately linked 3.1. Adsorption effect of organic ligands on H2S, SO2 and SF6 gases
with the metal sites that consists of two Cu atoms, ten O atoms and four
C atoms. In crystal of MOF-505, a = 18.8306 Å, c = 53.788 Å, the total MOF-505 is composed of organic ligands and metal sites, which plays
number of atoms is 576, and the pores at the center are in shape of a leading role in the adsorption selectivity of MOF-505 [44,45]. DFT
ellipsoid. calculation, as one of the promising methods to calculate quantum
chemistry, plays an important part in calculating the adsorption of
MOF-505 materials. The total density of States and the partial density of
states are expressed by TDOS and PDOS respectively.
The initial adsorption structure, TDOS and PDOS of H2S, SO2 and SF6
on organic ligands are show in Fig. 3. In Fig. 3(a), the initial distance is
1.578 Å, and after adsorption calculation, the adsorption distance is
1.106 Å. From the perspective of TDOS, H2S gas has overlapping peaks
at − 18eV, -7eV and 3eV, mainly caused by H-1s orbital and C-2p orbital,
with obvious hybridization and adsorption energy is − 2.64eV. As shown
in Fig. 4,in order to discuss the interactions between the adsorbed gas
molecule and organic ligands, the CDD and ELF are calculated. Colors of
blue, white and red are selected to describe the change of CDD, where
blue and red stands for the decrease and increase of electrons, respec
tively. Reverse rainbow is selected to describe the change of ELF. It can
be seen from blue region that the value of ELF is close to 0. The ELF in
Fig. 4(d) shows that green region appears between the H atom and C
atoms. The value of ELF of this region is near 0.5, indicating high
probability of new bond formation. the charge transfer is 0.68e. The
final adsorption distance was 1.106 Å. From the above analysis, it can be
concluded that the adsorption capacity of organic ligands to H2S was
good.
Fig. 2. Composition parts of MOF-505 analogue.
2
S. Li et al. Vacuum xxx (xxxx) xxx
Fig. 3. Adsorption structures of H2S, SO2, SF6 (a,d,g), TDOS(b,e,h) and PDOS(c,f,i) (red for O, yellow for S, white for H, and grey for C) on organic ligands. (For
interpretation of the references to colour in this figure legend, the reader is referred to the Web version of this article.)
3.2. Adsorption effect of metal sites on H2S, SO2 and SF6 gases
3
S. Li et al. Vacuum xxx (xxxx) xxx
Fig. 5. Adsorption Structures of H2S, SO2, SF6 (a,d,g), TDOS(b,e,h) and PDOS(c,f,i) (red for O, yellow for S, white for H, and grey for C) on metal sites. (For
interpretation of the references to colour in this figure legend, the reader is referred to the Web version of this article.)
Fig. 6. Charge density difference(CDD) and electron localization function(ELF) of H2S, SO2, SF6 on Metal sites.
electrons, respectively. As shown in Fig. 6 (a), the red area between the S H2S and SO2 on metal sites is poor.
atom and O atom indicates the existence of charge accumulation. After
calculation, the charge transfer and adsorption distance difference are
0.92e and − 0.764 Å, respectively. In Fig. 6(b), the charge accumulation Table 2
between S atom and O atom increased recently. In Fig. 6(e), the green Comparison of simulation results of different materials for H2S and SO2.
region between S atom and O atom indicates that the value of ELF is Gas Materials dab(Å) Eads(eV) Qt(e) Reference
close to 0.5, so it is possible that there is bond between S atom and O H2S molecule Organic-MOF-505 − 0.472 − 2.640 − 0.67 This work
atom. The Qt is 0.81e, and the adsorption distance difference dab is Metal-MOF-505 − 0.764 − 3.181 − 0.92 This work
− 0.925 Å. Au–MoS2 – − 0.955 − 0.352 [12]
As shown in Fig. 6(c), SF6 has less charge accumulation and weak GeP3 – − 1.09 − 0.078 [46]
SO2 molecule Organic-MOF-505 − 0.922 3.430 0.67 This work
adsorption capacity. The adsorption capacity, charge transfer and −
Metal-MOF-505 − 0.925 − 3.2 0.81 This work
adsorption distance difference are − 0.392eV, 0.03e and 0.015 Å, GaN – − 1.05 − 0.39 [20]
respectively. As shown in Fig. 6(c,f),Less charge accumulation and the SnP3 − 0.46 − 0.66 − 0.23 [47]
value of ELF is close to 0.The results show that the adsorption effect of ZnO(100) − 0.099 − 0.66 − 0.095 [15]
4
S. Li et al. Vacuum xxx (xxxx) xxx
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