Electronic Supplementary Material (ESI) for Dalton Transactions.

This journal is © The Royal Society of Chemistry 2024

Boosting broadband short-wave infrared emission to near-unity quantum

efficiency via bridging Cr3+-Ni2+ in spinel solid-solutions towards light-emitting
diode applications

Geng Chen1, Lifang Yuan2,*, Chaoyue Peng1, Haoyi Wu1, Yahong Jin1,*

1 School of Physics and Optoelectronic Engineering, Guangdong University of

Technology, WaiHuan Xi Road, No. 100, Guangzhou 510006, China.

2 School of Electronics and Communications, Guangdong Mechanical & Electrical

Polytechnic, Guangzhou 510515, China.

Corresponding author:
E-mail: ylf121382@163.com (L. Y.), yhjin@gdut.edu.cn (Y. J.)
Fig. S1. DRS of Mg0.5Zn0.5Ga2O4 and Mg0.5Zn0.5Ga2O4:2% Cr3+.
Fig. S2. Direct optical band gap of Mg0.5Zn0.5Ga2O4 host.
Fig. S3. EPR spectrum of Mg0.5Zn0.5Ga2O4:2%Cr3+.

The signals in the EPR spectrum correspond to different types of Cr3+. Specifically, g
= 3.995 and g = 2.505 denote the isolated Cr3+ ions, while g = 1.979 signifies the
presence of Cr3+-Cr3+ ion pairs.
Fig. S4. Quantum efficiency measurement of Mg0.5Zn0.5Ga2O4:2% Cr3+, 2% Ni2+.