HIGHER TECHNNOLOGICAL INSTITUTE

TENTH OF RAMADAN CITY

ELECTRONICS AND COMMUNICATION
ENGINEERING DEPARTMENT

Electronics (2)
(EEC 141)

Prepared by :
Dr.Eng. Eslam Samy EL-Mokadem
 Course Contents (Syllabus)
week parts Topic No. of Lecture Tutorial
hours
1 Bipolar junction transistor Biasing circuits 3 2 1
2 Part 1 DC and AC analysis of common emitter 3 2 1
amplifier
3 Bipolar DC and AC analysis of common base amplifier 3 2 1
Junction
4 Transistors DC and AC analysis of common collector 3 2 1
(BJT) amplifier
5 amplifiers
Quiz 1 - - -
6 Multistage amplifier 3 2 1

7 Midterm Exam - - -

8 DC and AC Analysis of common source 3 2 1

Part 2 amplifier
9 MOSFET DC and AC Analysis of common gate and 3 2 1
amplifiers common drain amplifier.
10 Quiz 2 - - -
11 Part 3 Ideal Operational Amplifier 3 2 1
12 Ideal Op Amp application 3 2 1
Operational
13 Frequency response of open loop gain. 3 2 1
Amplifier
(OP-Amp)
14 Non-ideal Op Amp amplifier. 3 2 1
 Resources
(Recommended References)

❑ Text book 1: Microelectronic Circuits, Sixth Edition, by Adel

S. Sedra and Kenneth C. Smith

❑ Text book 2 : Electronic Devices and Circuit Theory, Eleventh

Edition, by Robert L. Boylestad Louis Nashelsky

❑ Text book 3: Microelectronic circuits analysis and design,

Fourth Edition, by Donald Neamen.

❑ Text book 4: Electronic Principles, Eighth Edition, by Albert

Malvino.

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 Evaluation Strategy

Grading will be based on the following:

Attendance (10 Marks)
 Quiz 1 (10 Marks )
Quiz 2 (10 Marks )
Activities (10 Marks)
Midterm Exam (20 Marks)
Final Exam (40 Marks)

Total Marks (100 Marks)

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 Electronics (2)
(EEC 141)

Lecture (1)
Bipolar Junction Transistor (BJT)
Biasing circuits
 Transistor Structure

•Transistor is an electronic device made of

three layers of semiconductor material
that can act as an insulator and a
conductor.

•The three-layered transistor is also known

as the bipolar junction transistor(BJT).

• The term bipolar refers to the use of both

holes and electrons as charge carriers.

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 Types of BJT

NPN PNP
Collector characteristics curve

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 Transistor as an amplifier

One of the main basic functions of transistor is to do

amplification. The weak signal is given to the base of the
transistor and amplified output is obtained in the
collector circuit.

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 Types of amplifications

Unfaithful Faithful
Amplification Amplification
 Faithful Amplification

Definition :
Faithful Amplification : Is the process of raising the strength
of a weak signal without any change in its general shape

How to achieve Faithful Amplification ?

during all parts of the signal we must ensure that:
1- input circuit (i.e. base-emitter junction) of the transistor
remains forward biased
2- output circuit (i.e. collector- base junction) always remains
reverse biased. This is known as transistor biasing.

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 Transistor biasing conditions

To fulfill base-emitter junction) of the transistor

remains forward biased and collector- base junction)
always remains reverse biased, three conditions must
be satisfied:

1- Proper zero signal collector current )Ic)

2- proper Minimum base-emitter voltage (vBE) at any
instant.
3- proper Minimum collector-emitter voltage (VCE) at
any instant.

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 1- Proper zero signal collector current.

Consider an npn transistor circuit shown in Fig.

(i) During the positive half cycle of the signal,

base is positive w.r.t. emitter and hence base- emitter
junction is forward biased. This will cause a base
current and much larger collector current to flow in the
circuit. The result is that positive half-cycle of the signal
is amplified in the collector as shown.

(ii)During the negative half-cycle of the signal,

base-emitter junction is reverse biased and hence no
current flows in the circuit. The result is that there is no
output due to the negative half- cycle of the signal. Thus
we shall get an amplified output of the signal with its
negative half-cycles completely cut off which is
unfaithful amplification.
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 1- Proper zero signal collector
current.
When adding a battery source VBB in the base circuit as
shown in Fig.
The magnitude of this voltage should be such that it
keeps the input circuit forward biased even during the
peak of negative half-cycle of the signal. When no signal
is applied, a d.c. current will flow in the collector circuit
due to VBB as shown. This is known as zero signal
collector current IC
• During the positive half-cycle of the signal, input circuit
is more forward biased and hence collector current
increases.
• During the negative half-cycle of the signal, the input
circuit is less forward biased and collector current
decreases. In this way, negative half-cycle of the signal
also appears in the output and hence faithful
amplification results. It follows, therefore, that for
faithful amplification, proper zero signal collector
current must flow. The value of zero signal collector
current should be at least equal to the maximum
collector current due to signal alone
 Example 1

Suppose a signal applied to the base of a transistor

gives a peak collector current of 1mA. What is Value of
zero signal collector current must be?

Solution

At least equal to 1mA so that even during the peak

of negative half-cycle of the signal, there is no cut
off.

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 Example 2

If zero signal collector current is 0.5 mA and a peak collector

current of 1mA what will happen for the output signal ?

Solution
then some part (shaded portion) of the
negative half-cycle of signal will be cut
off in the output.

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 2- proper Minimum base-emitter
voltage (vBE)
In order to achieve faithful amplification

the base-emitter voltage (vBE) should not fall below 0.5 V for
germanium transistors and 0.7 V for Si transistors at any instant.

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 3- proper Minimum collector-emitter
voltage (VCE)
For faithful amplification
❑ the collector-emitter CE voltage vCE > 0.5 V for Ge transistors
and > 1V for silicon transistors. This is called knee voltage
❑ Practically , A.C. signals have small voltage level (< 0.1 V) and
if applied directly will not give any collector current.

VCE> knee voltage

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 Transistor Biasing

❑ Base emitter (BE) Junction is forward biased

❑ Base collector (BC) Junction is reverse biased

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 stabilization

❑ The process of making operating point independent of

temperature changes or variations in transistor parameters
.

❑ A good Biasing circuit ensure stabilization of operating

point

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 Types of Transistor DC Biasing
Circuits

Base resistor Biasing (Fixed-Bias )

Emitter- Biasing
Collector Feedback resistor Biasing
Voltage-Divider Biasing

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 1- Base resistor Biasing
(Fixed-Bias(

▪ Fixed-Bias circuit ▪ DC equivalent circuit

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 DC analysis for Base resistor Biasing

1- First step : Base emitter loop

By applying KVL:

2- Second step : Collector–Emitter loop.

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 Example1

Determine the following for the fixed-bias

configuration circuit .
a. 𝐼𝐵𝑄 and 𝐼𝐶𝑄
b. 𝑉𝐶𝐸𝑄
c. 𝑉𝐵 and 𝑉𝐶 .
d. 𝑉𝐵𝐶

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 Solution

1- First step : Base emitter loop

By applying KVL:

Note :
with the negative sign
revealing that the junction
is reversed-biased, as it
should be for linear
2- Second step : Collector–emitter loop.
amplification.

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 2-Emitter Biasing Circuit

 BJT bias circuit with emitter ▪ DC equivalent circuit

resistor.

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 DC analysis for Emitter-Bias
1- First step : Base emitter loop
By applying KVL:

The voltage at the base with respect to ground can be determined using

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 DC analysis for Emitter-Bias
 2- Second step : Collector–Emitter loop.
By applying KVL: