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Solution Manual For Electronic Devices and Circuit Theory 11Th Edition by Boylestad Nashelsky Isbn 0132622262 9780132622264 Full Chapter PDF
Solution Manual For Electronic Devices and Circuit Theory 11Th Edition by Boylestad Nashelsky Isbn 0132622262 9780132622264 Full Chapter PDF
Both intrinsic silicon and germanium have complete outer shells due to the sharing (covalent
bonding) of electrons between atoms. Electrons that are part of a complete shell structure require
increased levels of applied attractive forces to be removed from their parent atom.
2. Intrinsic material: an intrinsic semiconductor is one that has been refined to be as pure as
physically possible. That is, one with the fewest possible number of impurities.
Covalent bonding: covalent bonding is the sharing of electrons between neighboring atoms to
form complete outermost shells and a more stable lattice structure.
3.
4. a. W = QV = (12 µ C)(6 V) = 72 μJ
1 eV 14
b. 72 × 10 6 J = 19 = 2.625 × 10 eV
1.6 10 J
5. 48 eV = 48(1.6 10 19J) = 76.8 10 19J
W 76.8 10 19 J 18
Q= = = 2.40 10 C
V 3.2 V
6.4 10 19 C is the charge associated with 4 electrons.
8. A donor atom has five electrons in its outermost valence shell while an acceptor atom
has only 3 electrons in the valence shell.
1
9. Majority carriers are those carriers of a material that far exceed the number of any
other carriers in the material.
Minority carriers are those carriers of a material that are less in number than any other
carrier of the material.
10. Same basic appearance as Fig. 1.7 since arsenic also has 5 valence electrons (pentavalent).
11. Same basic appearance as Fig. 1.9 since boron also has 3 valence electrons (trivalent).
12.
13.
14. For forward bias, the positive potential is applied to the p-type material and
the negative potential to the n-type material.
kTK (1.38 10 23 J/K)(20 C 273 C)
15. a. V
q 1.6 10 19 C
25.27 mV
b. ID I s ( eVD / nVT 1)
40 nA(e(0.5 V)/ (2)(25.27mV) 1)
9.89
40 nA(e 1) 0.789 mA
32.17 mV
b. ID I s (eVD / nVT 1)
40 nA(e(0.5 V)/ (2)(32.17 mV) 1)
7.77
40 nA(e 1) 11.84 mA
17. a. TK=20+273=293
23
kTK(1.38 10 J/K)(293 )
VT q1.6 10 19 C
25.27 mV
b. ID I s (eVD / nVT 1)
0.1 A e 10/(2)(25.27 mV) 1
= 0.1 A(e 197.86 1)
0.1 A
2
23
kTK (1.38 10 J/K)(25 C 273 C)
18. V
q 1.6 10 19 C
=25.70 mV
/ nV
ID = I s (eVD T 1)
V /
19. I D I s (e D nVT 1)
6 mA1 nA(eVD /(1)(26 mV) 1)
6 106 eVD / 26 mV 1
eVD /26 mV 6 106 16106
V /26 mV
loge e D loge 6 106
VD
26 mV = 15.61
VD = 15.61(26 mV) 0.41 V
20. (a)
x y = ex
0 1
1 2.7182
2 7.389
3 20.086
4 54.6
5148.4
0
(b) y = e = 1
21. T = 20 C: Is = 0.1 A
T = 30 C: Is = 2(0.1 A) = 0.2 A (Doubles every 10 C rise in temperature)
T = 40 C: Is = 2(0.2 A) = 0.4 A
T = 50 C: Is = 2(0.4 A) = 0.8 A
T = 60 C: Is = 2(0.8 A) = 1.6 A
1.6 A: 0.1 A 16:1 increase due to rise in temperature of 40 C.
22. For most applications the silicon diode is the device of choice due to its higher temperature
capability. Ge typically has a working limit of about 85 degrees centigrade while Si can be
used at temperatures approaching 200 degrees centigrade. Silicon diodes also have a higher
current handling capability. Germanium diodes are the better device for some RF small
signal applications, where the smaller threshold voltage may prove advantageous.
3
23. From 1.19:
75 C 25 C 100 C 200 C
VF 1.1 V 0.85 V 1.0 V 0.6 V
@ 10 mA
Is 0.01 pA 1 pA 1 A 1.05 A
VF decreased with increase in temperature
1.7 V: 0.65 V 2.6:1
Is increased with increase in temperature
2 A: 0.1 A = 20:1
24. An “ideal” device or system is one that has the characteristics we would prefer to have when
using a device or system in a practical application. Usually, however, technology only
permits a close replica of the desired characteristics. The “ideal” characteristics provide an
excellent basis for comparison with the actual device characteristics permitting an estimate
of how well the device or system will perform. On occasion, the “ideal” device or system
can be assumed to obtain a good estimate of the overall response of the design. When
assuming an “ideal” device or system there is no regard for component or manufacturing
tolerances or any variation from device to device of a particular lot.
25. In the forward-bias region the 0 V drop across the diode at any level of current results in a
resistance level of zero ohms – the “on” state – conduction is established. In the reverse-bias
region the zero current level at any reverse-bias voltage assures a very high resistance level
the open circuit or “off” state conduction is interrupted.
26. The most important difference between the characteristics of a diode and a simple switch is
that the switch, being mechanical, is capable of conducting current in either direction while the
diode only allows charge to flow through the element in one direction (specifically the
direction defined by the arrow of the symbol using conventional current flow).
R
27. VD 0.7 V, ID = 4 mA =VD
0.7 V = 175DC
ID 4 mA
4
29. VD = 10 V,ID = Is = 0. 1A
RDC = VD 10 V =100M
I D 0.1 A
VD = 30 V, ID = Is= 0.1 A
RDC = VD 30 V =300M
I D 0.1A
As the reverse voltage increases, the reverse resistance increases directly (since the
diode leakage current remains constant).
30. ID = 10 mA, VD = 0.76 V
R VD 0.76 V
DC = I D 10 mA = 76
Vd 0.79 V 0.76 V 0.03 V
rd = =3
Id 15 mA 5 mA 10 mA
RDC >> rd
V 0.79 V 0.76 V 0.03 V
31. (a) rd = d =3
I
d 15 mA 5 mA 10 mA
rd = 26 mV 26 mV = 2.6
ID 10 mA
(c) quite close
V 0.72 V 0.61 V
ID = 1 mA, rd = d = 55
32.
I d 2 mA 0 mA
Vd 0.8 V 0.78 V
ID = 15 mA, rd = =2
Id 20 mA 10 mA
26 mV
33. ID = 1 mA, rd = 2 =2(26 )=52 vs 55 (#30)
ID
Id 13.5 mA 1.2 mA
5
V 0.9V0.7V0.2V
36.rav = d = 14.29 I d
14 mA 0 mA 14 mA
38.Germanium:
r 0.42 V0.3 V 4
av
30 mA 0 mA
GaAa:
r 1.32 V 1.2 V 4
av
30 mA 0 mA
6
41. The transition capacitance is due to the depletion region acting like a dielectric in the
reverse-bias region, while the diffusion capacitance is determined by the rate of charge
injection into the region just outside the depletion boundaries of a forward-biased
device. Both capacitances are present in both the reverse- and forward-bias directions,
but the transition capacitance is the dominant effect for reverse-biased diodes and the
diffusion capacitance is the dominant effect for forward-biased conditions.
VD = 20 V, CT = 0.9 pF
1 1
2
XC = fC 2 (6 MHz)(0.9 pF) = 29.47 k
C(0) 8 pF
43. CT 1 V /V n 1 5V/0.7V 1/2
R K
8pF 8 pF 8 pF
1/2
(1+7.14) 8.14 2.85
2.81 pF
44. CT 1V /V
C(0)
10 pF
4 pF =
1VR /0.7 V 1/3
(1 VR /0.7 V)1/3 2.5
3
1 VR /0.7 V (2.5) 15.63
VR /0.7 V 15.63 1 14.63
VR (0.7)(14.63) 10.24 V
10 V
45. If = = 1 mA
ts + tt = trr = 9 ns
ts + 2ts = 9 ns
ts = 3 ns
tt = 2ts = 6 ns
7
46.
47. a. As the magnitude of the reverse-bias potential increases, the capacitance drops
rapidly from a level of about 5 pF with no bias. For reverse-bias potentials in excess of
10 V the capacitance levels off at about 1.5 pF.
b. 6 pF
c. At VR 4V,CT 2 pF
C(0)
CT 1V/V n
R k
2 pF 6 pF
1 4V/0.7 V n
1 4V 0.7V n 3
n
(6.71) 3
n log10 6.71 log10 3
n(0.827) 0.477
0.477
n 0.58
0.827
48. At VD = 25 V, ID = 0.2 nA and at VD = 100 V, ID 0.45 nA. Although the change in IR is more
than 100%, the level of IR and the resulting change is relatively small for most applications.
49. Log scale:TA = 25 C, IR = 0.5 nA
TA = 100 C, IR = 60 nA
The change is significant.
60 nA: 0.5 nA = 120:1
Yes, at 95 C IR would increase to 64 nA starting with 0.5 nA (at 25 C)
(and double the level every 10 C).
The results support the fact that the dynamic or ac resistance decreases rapidly
with increasing current levels.
8
51.T = 25 C: Pmax = 500 mW
T = 100C: Pmax = 260 mW Pmax = VFIF
P
IF = max 500 mW = 714.29 mA
PV F 0.7 V
IF = max
260 mW
= 371.43 mA
VF 0.7 V
714.29 mA: 371.43 mA = 1.92:1 2:1
53.
55. TC = VZ 100%
VZ (T1 T0 )
= (5 V 4.8 V) 100% = 0.053%/ C
5 V(100 25 )
9
At IZ = 0.1 mA, TC 0.06%/ C
(5 V 3.6 V) 100% = 44%
(6.8 V 3.6 V)
The 5 V Zener is therefore 44% of the distance between 3.6 V and 6.8 V measured from the
3.6 V characteristic.
At IZ = 0.1 mA, TC 0.025%/ C
57.
58. 24 V Zener:
0.2 mA: 400
1 mA: 95
10 mA: 13
The steeper the curve (higher dI/dV) the less the dynamic resistance.
59. VK 2.0 V, which is considerably higher than germanium ( 0.3 V) or silicon ( 0.7 V). For
germanium it is a 6.7:1 ratio, and for silicon a 2.86:1 ratio.
19
1.6 10 J
60. 0.67 eV 1.072 10 19 J
1 eV
Eg hc hc (6.626 10 34 Js)(3 108 ) m/s
Eg 1.072 10 19 J
1850 nm
Very low energy level.
10
(c) For currents greater than about 30 mA the percent increase is significantly less than
for increasing currents of lesser magnitude.
0.5= 40
0.2 mA 20 mA
x
C 20 mA
x= =100 C
0.2 mA/ C
11
Chapter 2: Diode Applications.
E 12 V
1. The load line will intersect at ID = R 750 = 16 mA and VD = 12 V.
(c) VDQ 0 V
ID 16 mA
Q
For (a) and (b), levels of VD and ID are quite close. Levels of part (c) are reasonably close
Q Q
(b) I = E 6 V = 12.77 mA
D
R 0.47 k
The load line extends from ID = 12.77 mA to VD = 6 V.
VD 0.8 V, ID 11 mA
Q Q
E 6V
(c) ID = R 0.68 k = 8.82 mA
The load line extends from ID = 8.82 mA to VD = 6
V. VDQ 0.78 V, IDQ 78 mA
The resulting values of VDQ are quite close, while IDQ extends from 7.8 mA to 25.3 mA.
12
E
4. (a)ID = IR = VD 30V 0.7V = 19. 53 mA
R1.5 k
VD=0.7V,VR=E VD=30V 0.7V=29.3V
(b) ID = E VD 30V 0V = 20 mA
R 1.5 k
VD=0V,VR=30V
I = I(10 Ω) + I(20 Ω)
= 2.895 A
10 V
(c) I = 10 = 1 A; center branch open
R 2.2 k
(b) Diode forward-biased,
8V+6V 0.7V
ID = = 2.25 mA
1.2 k 4.7 k
Vo = 8 V (2.25 mA)(1.2 kΩ) = 5.3 V
Language: English
OF
VETERINARY MEDICINE
BY
VOL. II
ITHACA
PUBLISHED BY THE AUTHOR
1900
Copyright by
JAMES LAW
1900
PRESS OF
ANDRUS & CHURCH
ITHACA, N. Y.
VETERINARY MEDICINE.
These are met with in all domestic animals, but are above all
common in horses, oxen and pigs, partly because of special
susceptibilities and of the nature of the food, but largely by reason of
the exposure of this part to mechanical injuries, especially in horses
and cattle. Hard bits and the harder hands of cruel and ruthless
drivers, nooses of rope tied over the lower jaw and tongue, iron
stirrup, clevis, or balling iron used without cover to force the jaws
apart, a large drenching horn employed as a lever for the same
purpose, an extemporized Yankee bridle rudely applied or used in
breaking a colt, the method of curing a balking or jibbing horse by
tying a rope to his lower jaw and to a bar extending forward from the
pole, pins, needles, thorns and other sharp bodies, and irritants in
food or medicine are among the causes of such disorders. Then there
are the many irritating microörganismal ferments in food, water,
mucus, etc., and irritant and hot medicines and food to account for
local inflammations.
FUNCTIONAL DISORDERS.
Among these are the convulsive closure of the jaws in tetanus, the
flaccid state of the lips, cheek, and tongue in paralysis, and the
pendent state of the lower jaw in paralytic canine madness. See
these different subjects.
STRUCTURAL DISEASES.
INFLAMMATION OF THE LIPS, CHEILITIS.
Causes. Blows, pricks, wounds and bruises with bits or twitch, and
other mechanical and chemical irritants, irritant vegetables, bites of
leeches or snakes, stings of insects, etc. It may be a skin disease
dependent on disorder of some remote organ, or a local engorgement
due to a constitutional state. (See, Urticaria Surfeit, Purpura
hæmorrhagica, Variola, Strangles).
Symptoms. Swelling, stiffness, heat and tenderness of the lips,
with or without local abrasion, or incised or punctured wound. Food
may be entirely refused from inability to take it in with the rigid
tender lips, and saliva drivels from the mouth because of their
imperfect apposition. Cracks, blisters and raw sores or ulcers may or
may not supervene. In old standing cases the lips become indurated
and comparatively immobile.
Treatment. Remove the cause whether irritants in food, or drugs,
sharp pointed bodies lodged in the tissues, injuries by bit, twitch or
otherwise. Local applications have comparatively little effect, being
promptly removed by the tongue, yet a lotion of vinegar and honey;—
of borax 10 grains and honey or glycerine 1 oz.;—or of alum in a
similar medium will often prove useful. A dose of laxative medicine
will favor resolution, and if there is great tumefaction, feeding thick
gruels from high manger, and tying to a high rack so as to prevent
drooping of the head, will favor recovery. In snake bites and stings
the local application of aqua ammonia and its administration
internally (horse and cow 1 oz., sheep 2 dr. in 20 times its volume of
water) should be practiced; or permanganate of potash may be used.
When the heat and tenderness subside, leaving much thickening
and induration it may be repeatedly painted with a lotion of one part
of tincture of iodine in three parts of glycerine.
CANCROID OF THE LIPS. EPITHELIOMA.
This has been observed in the cat and the horse, commencing at
the angle of the mouth and doubtless partially determined in the
latter animal by the irritation of the bit.
It is characterized by thickening of the tissues of the lips, in the
form of small irregularly rounded masses, and tending to the
formation of a spreading ulcer. The thickened tissues are invaded,
pushed aside and infiltrated by epithelial or epithelioid cells, which,
no longer confined to the surface as in the natural state, grow in the
interior of the tissues and destroy them.
Treatment. The disease has little tendency to cause secondary
deposits in other organs and may often be arrested by local
measures. In its earliest stages it may be arrested by the thorough
removal of the diseased structures with the knife, the resulting
deformity being obviated by bringing the raw edges together by
suture, so as to secure their adhesion, or the actual cautery may be
used. The tendency to irritation from putrefaction products escaping
from the mouth may be counteracted by occasional sponging with a
weak lotion of carbolic acid (1 part to 50 of water) or an ointment of
one part of very finely powdered boracic acid to two parts of simple
ointment.
Leblanc has repeatedly succeeded in these cases by the use of
chlorate of potash, locally and generally. The local application may
be a solution of two drachms in four ounces of water, while the dose
of the powder for the horse is 2 to 4 drachms daily.
Warts and Polypi. These are common on the outer and even the
inner side of the lips, especially in dogs. They are easily removed by
the scissors, after which their roots should be thoroughly cauterized
with a pointed stick of lunar caustic or chloride of zinc.
ACTINOMYCOSIS OF THE LIPS.