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1 - First Preparing - Paper 2
1 - First Preparing - Paper 2
1 - First Preparing - Paper 2
Abstract—The binomial arrayis a non-uniform amplitude reduction of side lobes. Different analytical methods and
array in which the amplitude of the antenna elements are numerical optimization such as Fourier, genetic algorithm and
arranged depending on the coefficient of the binomial series.This Woodward-Lawson, etc…were developed for the synthesis of
series based on Pascal’s triangle for which the elements are the radiation pattern of antenna arrays.The main objective is to
equally spaced with unequal amplitude excitation in such a way find an appropriate set of element amplitudes which achieves
that the resultant radiation pattern has reduced side lobes. In interference suppression with maximum SLL reduction and
this paper investigation and implementation of reduced side lobes narrow HPBW using the binomial array feeding based on
of non-uniform substrate integrated waveguide (SIW)slot
Pascal’s triangle [4-10]. Feeding structures of antenna array is
antenna array have been presented using the binomial excitation
still an essential part of microwave system to obtain maximum
of 121 described by Pascal’s triangle using 6-port SIW
directional couplerfor three sub-arrays. The proposed array
radiated power with minimum loss. The rectangular
consists ofthree sub arrays of SIW slot antenna including twelve waveguides still have the advantage of high power handling
radiating elements of rectangular shape slots distributed equally capability in the high frequency range. It has several
for each sub-array. The proposed array has been designed and disadvantages such as sophisticated design, expensive,
implemented using Roggers 4350 of 𝛆𝐫 = 𝟑. 𝟔, 𝐭𝐚𝐧 𝛅 = 𝟎. 𝟎𝟎𝟒 and transitions using flanges and difficult integration with
thickness 𝐡𝐑 = 𝟏. 𝟓 𝐦𝐦.The proposed array has been simulated microwave components. However, Microstripdevices are less
using HFSS simulator.Results from theproposed binomial SIW expensive and easy for integration but still have the
antenna array showed agreement between simulation and disadvantages of low power and radiation loss compared with
measurements and giving return loss (𝐒𝟏𝟏 = −𝟑𝟕. 𝟕 𝐝𝐁) , gain waveguide devices.The SIW technologies which is a metal
( 𝐆 = 𝟏𝟏 𝐝𝐁) ,HPBW=45 degree, radiation efficiency of filled via-hole array in substrate and grounded planes are the
84.3%,fractional bandwidth(𝐁𝐟 = 𝟏𝟏. 𝟔𝟓% )and side lobe level solution to have at the same time the advantages of both
(SLL= −𝟐𝟏 𝐝𝐁)forX-Band missile guidance system applications. waveguide and microstrip technologies and overcome their
disadvantages. The SIW technologies have the advantages of
Keywords—Non-uniform Antenna Array; The Substrate easily integration with other systems, compact in size, lesscost,
Integrated Waveguide; SIW Directional Coupler;SIW Slot quality factor and low radiation loss. Most of microwave
Antennas; Binomial Excitation; Pascal’s Triangle components and systems can be implemented using the SIW
technology such as couplers, combiners, dividers shifters,
I. INTRODUCTION
circulators, slot antennas, fractal antennas and other hybrid
Antenna plays a vital role in wireless and microwave microwave devices [1] and [11-13]. In This paper, the binomial
systems asa main component for these systems such as excitation based on Pascal’s triangle using SIW directional
satellite, radar and radio applications. The printed antennas are coupler has been introduced to feed the SIW antenna array
one of the important technologies as they are designed to meet having reduced side lobe levelsradiation patternfor differentX-
the requirements of technological development, and tended to Band military applications like missile guidance,
the miniaturization of telecommunications systems [1-3].The trackingsystems and many other applications[1] and [14-18].
synthesis problem in the antenna array is the variations in Simulation results of the proposed structures have been
amplitude, phase and the spatial distribution of radiating obtained using HFSS simulator based on the finite element
elements to have fixed constraints radiation, in other words method (FEM).
II. THE SIW STRUCTURES DESIGN METHODOLOGY
𝛆𝐫 +𝟏 𝛆𝐫 −𝟏 𝟏
The SIW technology is considered a new technology for 𝛆𝐞 = + and λgT = (3 × 108 /f√εe ) (6)
𝟐 𝟐 √𝟏+𝟏𝟐hR /wT1
integrated microwave circuit applications. It is a quasi
dielectric filled rectangular waveguide (RWG)with low
conducting of via rows with diameter d and pitch p between
𝜆 μ λgS π2 hR
each via where, (𝑑 < 𝑃) as 𝑝 < 4𝑑and 𝑝 < 0 √𝜀𝑟 [1] and [19- ZTE = √ ×
ε λ
andZP = ZTE
8aS
(7)
2
22].The physical dimensions of SIW structure determine the
propagating 𝑇𝐸𝑛,0 mode, n=1, 2,…The dominant 𝑇𝐸10 has Thebasic SIW structure withtapering transition dimensions
maximum handling power with vertical electric current density are illustrated in figure 1 and the dimensions of SIW and RWG
on via rows. The TM modes cannot be supported in SIW are tabulated in tables I, II and III.
structures. The physical dimensions of RWG of width 𝑎𝑊𝐺 and
height 𝑏𝑊𝐺 determine the 𝑓𝑐 of the propagating mode where
𝑓 > 𝑓𝑐 using (1) [23] with length 𝐿𝑊𝐺 . The SIW structure
without tapering transition dimensions and guided wavelength
can be calculated using equations (2) and (3) depending on the
desired cutoff frequency, where 𝑎𝑑 is the width of dielectric
filled waveguide and 𝑎𝑠 is the width of SIW structure[1] and Fig. 1. TheBasic SIW With Tapering Transition
[20-22]. TABLE I. THE SIW DIMENSIONS [MM] AND PARAMETERS
𝜺𝒓 𝒕𝒂𝒏𝜹 𝒉𝑹 𝝀𝒈𝒔 𝑾𝑺 𝑳𝑺 = 𝟐𝝀𝒈𝒔 𝒂𝑺 p d
𝜐 𝑚 2 𝑛 2 a
𝑓𝑐𝑇𝐸𝑚,𝑛 = √( ) + ( ) and a d = (1) 3.6 0.004 1.5 28 13.5 56 12.5 1.2 0.8
2 𝑎 𝑏 √εr
TABLE II. THE RWG DIMENSIONS [MM] AND PARAMETERS
𝜺𝒓 𝝀𝑾𝑮 𝒂𝑾𝑮 𝒃𝑾𝑮 𝑳𝑾𝑮 = 𝟐𝝀𝑾𝑮
d2 1 65.5 22.86 10.16 131
as = ad + (2)
0.95P TABLE III. THE TAPERING TRANSITION DIMENSIONS [MM]
𝝀𝒈𝑻
𝝀𝒈𝑻 𝑾𝑻𝟏 𝑾𝑻𝟐 𝑳𝑻𝟏 𝑳𝑻𝟐 =
𝟒
2π 20 4.8 3.2 10 10
λgs = Thescattering matrixof RWG and SIW structures expressed
2 2 (3)
√(2πf) . εr − ( π ) in (8) indicates a good performance of the structure as the
c aS
transmission coefficient reaches a magnitude of one all over
the frequency band.
To match the quasi-TEM mode of Microstrip line with
𝑇𝐸10 of SIW structure tapering transitions must be used. The
objective is to maintain the reflection coefficients in minimal
value without any mechanical assembly for integrated planar
𝜆𝑔𝑠
circuit on the same substrate. Dimensions WT1 ,WT2 , 𝐿 𝑇1 =
3
λgT
and 𝐿 𝑇2 = of the proposed Microstrip transmission line
4
feeding and transition can be calculated using equations from
(4) to (7) [23] based on SIW wave impedance 𝑍𝑇𝐸 and ohmic
resistance 𝑍𝑃 for 50 ohm impedance in (7)[1] and [13].
WT2
=
hR
(a)
8eA WT2
2A
for <2
e −2 hR (4)
(d)
Z0 εr +1 εr −1 0.11 377π
Fig. 2. The RWG and Basic SIW Without/With Tapering Transition
A= √ + (0.23 + ) and B = (5) Simulation Results (a) The S-Parameters [dB] (b) The SIW Electric
60 2 εr +1 εr 2Z0 √εr
Field Distribution [V/m] (c) The RWG Electric Field Distribution
[V/m] (d) The SIW With Tapering Electric Field Distribution [V/m]
[SSIW ] = [0.000656 0.9964 0.000076 0.998
] and [𝑆𝑅𝑊 ] = [ ]
0.9964 0.000634 0.998 0.0000776 (8)
(a)
(b) (c)
TABLE VI. THE SIW DIRECTIONAL COUPLER FOR BINOMIAL
EXCITATION OF THREE SUB-ARRAYSPARAMETERS [DECIBEL]
RL IL C D I
C1 C2 D1 D2 I1 I2
22.2 3.17
7.73 7.74 34.66 34.54 42.41 42.27
(d) TABLE VII. THE SIW DIRECTIONAL COUPLER FOR PASCAL’S TRIANGLE
DISTRIBUTION OF THREE SUB-ARRAYS
Port 2 Port 3 Port 4
Mag. Phase Mag. Phase Mag. Phase
0.694 -103.9 0.411 -103.3 0.41 -103.7
(b)
Fig. 6. The Sub-Array of the SIW Antenna Varieties (a) The First Variety(b)
The Second Variety
Fig. 5. The SIW Directionl Coupler for Binomial Excitation of 3-Element
Antenna Array Parameters
TABLE VIII. DIMENSIONS OF SIW SLOT ANTENNA VARIETIES [MM]
Return Loss (RL) = −20log|S11 | (10) 𝑳𝑺𝟏 𝑳𝑺𝑳 𝑳𝑺𝑳𝟏 𝒘𝑺𝟏 𝒘𝒔𝑳 𝑳𝑺𝟐 𝒘𝒔𝑳𝟏
37.5 16.45 16.5 4.3 0.5 23.5 0.3
𝒘𝑺𝟐 𝒘𝑺𝟑 𝒘𝑺𝟒 𝒘𝑺𝟓 𝒘𝑺𝟔 𝒘𝑺𝟕 𝒘𝑺𝟖
Insertion Loss (IL) = 10log(P1 /P2 ) = −20log|S12 | (11)
3.75 2.1 2 0.825 0.3 0.6 1.15
𝑛!
(1 + 𝑥)𝑛 = (16)
(𝑛
𝑟! − 𝑟)!
Fig. 10. The Integrated Binomial Array with SIW Directional Coupler
(a)
Fig. 9. The Return Lossof the Sub-Array Antenna Varieties [dB]
(b)
(a)
(c)
(b)
(d)
(e)
Fig. 11. The Binomial SIW Antenna Array Simulation Results (a) Return
Loss [dB] (b) Surface Current [A/m] (c) The Gain [dB],f= 8.04 GHz
(d) The Gain [dB] , f= 10.34 GHz (e) The Gain [dB] , f= 9.8 GHz (c)
TABLE X. PARAMETERS OF THE BINOMIAL SLOT ANTENNA ARRAY Fig. 12. The Binomial SIW Slot Antenna Array Implementation and
Rad. simulation results (a)The Implemented System(b) The Measuremnt
S11 Umax. Pacc. Prad G in Lab. (c) The Comparision between measured and simulated results.
f [GHz] Effici-
[dB] [W/Str.] [W] [W] [dB]
ency [%]
0.622 VI. CONCILUSIONS
8.04 -25 0.994 0.732 8.956 73.62