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Energies 15 04666 v3
Energies 15 04666 v3
Article
Modular Transformerless Static Synchronous Series
Compensator with Self-Balancing for Ultra High Current Using
a Paralleling Scheme
Antonio E. Ginart
Figure1. 1.
Figure Parallel
Parallel transmission
transmission power
power lines lines in a suburban
in a suburban area in area
SantainClarita,
Santa CA,
Clarita,
USA.CA.
Energies2022,
Energies 2022,15,
15,4666
x FOR PEER REVIEW 33 of
of 16
17
Figure2.2.The
Figure Theunbalance
unbalancein
inthe
thetransmission
transmissionpower
powerlines
linescan
canbe
becompensated
compensatedwith
withTSB-SSSC.
TSB-SSSC.
2.2.Background:
Background:Static
StaticSynchronous
SynchronousSeries
SeriesCompensator
Compensator(SSSC)
(SSSC)
The
TheSSSC
SSSCisisan
aninverter
inverterconnected
connectedin inseries
serieswith
withan anAC
ACtransmission
transmissionline.
line.The
TheSSSC
SSSC
does
doesnot
nothave
haveaasource
sourceof ofreal
realpower
powerconnected
connectedto toits
itsDC
DCcapacitor.
capacitor.The
Theinverter
invertercancanbe be
connected
connecteddirectly
directlytotoa transmission
a transmission line, or it
line, orcan be connected
it can through
be connected a transformer.
through The
a transformer.
traditional configuration
The traditional uses auses
configuration transformer that reduces
a transformer the current
that reduces that thethat
the current semiconduc-
the semi-
tors receive by the turn ratio of the transformer
conductors receive by the turn ratio of the transformer [1].[1].
The
The SSSC
SSSC can control the
can control theflow
flowofofreal
realpower
power onon
thethe transmission
transmission lineline
whenwhen
it is itcon-
is
connected in series
nected in series withwith
thatthat
line.line. Figure
Figure 3 shows
3 shows how how the power
the power flowsflows
alongalong
any ACanytrans-
AC
transmission
mission line line between
between bus 1bus
and 1 and
bus bus
2, and2, and
it is it is given
given by, by,
V𝑉 V2𝑉
P12𝑃 = = 1 sinδ
𝑠𝑖𝑛12𝛿 (1)
(1)
𝑋
X12
V1 ∠θ1 𝑉
wherewhere and∠𝜃V ∠ and 𝑉 ∠𝜃 are the voltage phasors for bus 1 and bus 2, respectively,
2 θ2 are the voltage phasors for bus 1 and bus 2, respectively, δ = θ2 − θ1 .
𝛿 = 𝜃 − 𝜃 . 𝑋 = 𝑗𝜔𝐿
X12 = jωLline is the inductive isreactance
the inductiveof thereactance
transmissionof theline,
transmission
and P12 is line, 𝑃 is
andpower
the real
the real power flowing along the transmission line. Transmission
flowing along the transmission line. Transmission line voltages are generally regulatedline voltages are gener-
ally tightly,
very regulated so itvery tightly,
is fair so it that
to assume is fair
V1 to
=V assume that 𝑉 = 𝑉 = 𝑉. Power flow on AC
2 = V. Power flow on AC transmission lines
is mostly uncontrollable: the only level of control thatlevel
transmission lines is mostly uncontrollable: the only of controlline
transmission thatoperators
transmission
have line
on
operators
the network have on the network
is through modifyingis through modifying
its topology, its topology,
i.e., they can havei.e., they
a line can have to
connected a line
or
connected to from
disconnected or disconnected from the
the AC network. TheACSSSCnetwork. The SSSC can
can dynamically dynamically
modify the power modify
flow
the power
along the ACflow along the AC
transmission linetransmission
as, line as,
V 2 𝑠𝑖𝑛 𝛿 VV
P12 𝑃
= = sinδ12 +
+ SSSC cos
𝑐𝑜𝑠δ12 (2)
(2)
X12 X12 2
whereV𝑉
where SSSC isisthe
theAC
ACvoltage
voltageinjected
injectedby bythe
theSSSC
SSSCininseries
series with
with the
the transmission
transmission line.
line.
Theabove
The aboveequation
equationshows
showsthatthatthe
theSSSC
SSSCcan canmodify
modifythe
thepower
powerflow
flowalong
alongaatransmission
transmission
lineby
line byeither
eitherincreasing
increasingor ordecreasing
decreasingit,it,depending
dependingon onthe
thephase
phaseangle
anglebetween 𝑉
betweenVSSSC
andthe
and thetransmission
transmissionlinelinecurrent
current(± ( 9090°).
◦ ). The
Theamount
amountof ofreal
realpower
powerthat
thatcan
canbe
bechanged
changed
onthe
on thetransmission
transmissionlinelinealso
alsohas
hasaalinear
linearrelationship
relationshipwith 𝑉 . .This
withVSSSC Thisgives
givesSSSC
SSSCaagreat
great
advantageover
advantage overother
othertypes
typesof of series
series compensators,
compensators, mostmost of which
of which typically
typically havehave an in-
an inverse
verse relationship
relationship between between
the powerthe power
flow and flowtheand the control
control variable.
variable.
This linear control of the power flow along a transmission line makes the SSSC a great
tool for transmission line operators and provides them with a lot of flexibility with the
changing generation and load profiles in modern power networks. SSSCs are a good option
for utilities that generally do not have the flexibility to install additional transmission lines
Energies 2022, 15, 4666 4 of 16
This linear control of the power flow along a transmission line makes the SSSC a great
tool for transmission line operators and provides them with a lot of flexibility with the
changing generation and load profiles in modern power networks. SSSCs are a good op-
tion for utilities that generally do not have the flexibility to install additional transmission
lines to meet the changes in generation centers resulting from renewables such as offshore
wind and distributed solar.
Figure
Figure 3.
3. Basic
Basic operation
operation of
of SSSC
SSSC with
with phasor
phasor diagram.
diagram.
3. Modular SSSC Converter
3. Modular SSSC
This linear Converter
control of the power flow along a transmission line makes the SSSC a great
To balance power system transmission lines, an effective SSSC needs to be capable of
tool for transmission
To balance powerline systemoperators and provides
transmission lines, an them with SSSC
effective a lot needs
of flexibility with the
to be capable of
injecting from a few to several hundred MWs of reactive power. To inject this amount of
changing
injecting fromgeneration
a few to and load profiles
several hundred inMWs
modern power networks.
of reactive power. ToSSSCs are aamount
inject this good op- of
reactive power in power lines of several thousand amperes, the SSSC needs to withstand
reactive
tion power in
for utilities thatpower lines do
generally of several
not have thousand amperes,
the flexibility the SSSC
to install needs transmission
additional to withstand
tens of kilovolts. Under these circumstances, the best way to produce a high-power con-
lines to meet the changes in generation centers resulting from renewables suchhigh-power
tens of kilovolts. Under these circumstances, the best way to produce a as offshore
verter is with a modular design such as the one used by Modular Multilevel Converter
converter
wind and is with a modular
distributed solar. design such as the one used by Modular Multilevel Converter
(MMC) [2–4],
(MMC) [2–4], but
but with
with thethe difference
difference that that the
the SSSC
SSSC is is aa series
series converter
converter thatthat needs
needs to to carry
carry
the total
theModular
3. current
total current of the
SSSCofConverter line at a fraction of the hundreds of kilovolts
the line at a fraction of the hundreds of kilovolts of the transmission of the transmission
powerlines.
power lines.OnOnthe theother
otherhand,hand,the the
MMCMMC is typically
is typically used used
for for transmission
transmission power sys-
tems To balance
that sustainpower
the system
total transmission
voltage, usually lines,
tens ankilovolts,
of effective SSSC
but needs
only at topower
a fraction
systems
be capable of of
the
that sustain
injecting from the
a totaltovoltage,
few several usually
hundred tens
MWs of ofkilovolts,
reactive but onlyTo
power. at inject
a fraction
this of the line
amount of
line current,
current, suchsuch as
asininpowerin HVDC
HVDC or STATCOM
or STATCOM applications.
applications.
reactive power
Designing aa viable
viable SSSC lines of
SSSC product several
product must thousand
must rely
rely ononamperes, the SSSCmanufactured
using large-scale
large-scale needs to withstand power
tens Designing
of kilovolts. currently
Under these circumstances, the bestusingway reliable
to produce manufactured
a high-power power
con-
semiconductors
semiconductors currentlydesignon the
on the such market.
market. Lower
Lower cost
cost and
and reliable power
power semiconductors
semiconductors
verter is
nowadays arewith a modular
are centered
centered on on silicon
silicon IGBTs as the
IGBTs with one used
with aa nominal by Modular
nominal voltage
voltage of Multilevel
of 1200–1700
1200–1700 V Converter
V and
and aa
nowadays
(MMC)
current [2–4],
of but awith
about the difference
thousand amperes. that theoperational
The SSSC is a series converter
frequency that be
should needs to carry
limited to aa
current of about a thousand amperes. The operational frequency should be limited to
the total
single current
pulse or a of
PWMthe line
of a at
fewa fraction
hundred ofhertz
the hundreds
to avoid of kilovoltsswitching
significant of the transmission
losses. The
single pulse or a PWM of a few hundred hertz to avoid significant switching losses. The
power lines. On
proposed architecture the other
architecture uses hand,
uses the the MMC
the paralleling is typically
paralleling converters
converters to used
to carryfor transmission
carry large
large line power
line currents
currents in sys-
in the
the
proposed
tems
orderthat sustain theoftotal
of thousands
thousands voltage,
amperes, usually
and series tens of kilovolts,
converters butlarger
to inject
inject only at a fraction
voltages of the
in tens
tens of
order of of amperes, and series converters to larger voltages in of
line current,
kilovolts [5].such
Figure as in HVDC oraSTATCOM applications.capable of meeting the require-
kilovolts [5]. Figure 4 4presents
presents modular
a modular arrangement
arrangement capable of meeting the requirements
ments Designing
necessary a viable
to developSSSCthe product must rely on
transformerless using
SSSC large-scale
present in thismanufactured
work. power
necessary to develop the transformerless SSSC present in this work.
semiconductors currently on the market. Lower cost and reliable power semiconductors
nowadays are centered on silicon IGBTs with a nominal voltage of 1200–1700 V and a
current of about a thousand amperes. The operational frequency should be limited to a
single pulse or a PWM of a few hundred hertz to avoid significant switching losses. The
proposed architecture uses the paralleling converters to carry large line currents in the
order of thousands of amperes, and series converters to inject larger voltages in tens of
kilovolts [5]. Figure 4 presents a modular arrangement capable of meeting the require-
ments necessary to develop the transformerless SSSC present in this work.
Figure 4. Modular SSSC scheme (a) diagram (b) 3-seres SCCC single pulse.
Figure 5. Modules
Figure 5. Modules as
as single
single dies
dies paralleling.
paralleling. Panel
Panel 11 on
on the
the left
left are
are the
the IGBTs and Module.
IGBTs and Module. Panel
Panel 22
on the right are the MOSFETs.
on the right are the MOSFETs.
I(t)
V(t)
A2
Vp
A1
32.70
π−α π
α Same area
A1=A2
α=(π/2)-1= 32.7o
Figure6.6.Square
Figure Squarevoltage
voltageinjection
injectionand
andequalized
equalizedarea
areafor
forharmonics
harmonicscontent
contentminimization.
minimization.
Foraagiven
For givenfiring
firingangle
angle(α),
(α),the
thefirst
firstharmonics
harmonicsof ofthe
thefundamental
fundamentalvoltage
voltageinjection
injection
canbe
can becalculated
calculatedas:
as:
2 π −α
Z
VAC1 = 2·VP sin (ωt)d(ωt) (3)
𝑉 π = α 2 ∙ 𝑉 sin (𝜔𝑡)𝑑(𝜔𝑡) (3)
By ◦
Bythe
thesame
samearea
areacriteria,
criteria,angle
angleααisiscalculated
calculatedto tobe
be32.7
32.7°,, generating
generatingaafirst
firstharmonic
harmonic
of 1.07 V
of 1.07 V P P, yielding 7% of overmodulation and total harmonic content of less one-third,
, yielding 7% of overmodulation and total harmonic content of less than than one-
which
third, is a relatively
which small THD
is a relatively small(Total
THD Harmonic Distortion),
(Total Harmonic with verywith
Distortion), low very
zero-sequence
low zero-
harmonics
sequence harmonics such as 3rd and 9th harmonics. The maximum injection of
such as 3rd and 9th harmonics. The maximum injection possible the first
possible of
harmonic with α equal to zero produces an overmodulation of 4/π (1.27)
the first harmonic with α equal to zero produces an overmodulation of 4/π (1.27) with with respect to
the capacitor voltage, but with one-third of the 3rd harmonic.
respect to the capacitor voltage, but with one-third of the 3rd harmonic.
The SSSC energy storage is a capacitor limited to a few millifarads; consequently, the
The SSSC energy storage is a capacitor limited to a few millifarads; consequently, the
voltage of the capacitor does not remain constant. It decreases if the current is leaving or
voltage of the capacitor does not remain constant. It decreases if the current is leaving or
increases if the current fills the capacitor. The depletion of the voltage happens when the
increases if the current fills the capacitor. The depletion of the voltage happens when the
inverter is behaving as an inductor; the voltage increase happens when it is behaving as
inverter is behaving as an inductor; the voltage increase happens when it is behaving as a
a capacitor. Regardless of behavior, capacitive or inductive, the initial and final capacitor
capacitor. Regardless of behavior, capacitive or inductive, the initial and final capacitor
voltage needs to be the same to maintain steady-state operation. Figure 7 shows the
voltage needs to be the same to maintain steady-state operation. Figure 7 shows the
“bumping” of the injected AC voltage that can be concave for capacitive injection and
“bumping” of the injected AC voltage that can be concave for capacitive injection and
convex for inductive injection. The concave or convex shape generates different harmonics
Energies 2022, 15, x FOR PEER REVIEW 7 of 17
convex for inductive injection. The concave or convex shape generates different harmon-
content, with the capacitive injection producing less harmonic content. The first harmonics
icsthe
in content, with the are
two conditions capacitive
shown injection
in Figure producing
7. less harmonic content. The first har-
monics in the two conditions are shown in Figure 7b.
π−α π α
α Inductive
Eo
ILpeak
E
C.ω
Average Capacitor = E -/+ bump
Eo Capacitive
Figure
Figure 7.
7. Concave
Concaveor
orconvex
convex shape
shape of
of the
the voltage
voltage depending
depending on
on inductive
inductive or
or capacitive
capacitive mode.
mode.
A set of Equations (4)–(7) is derived for sizing purposes to compute the first harmon-
ics and the relation with the average capacitor voltages. The equation below shows VAC1
(first harmonic) the relation of line current (IL), firing angle (α), and the initial and final
voltage of the capacitor (E). E is defined as open capacitor voltage.
Energies 2022, 15, 4666 7 of 16
A set of Equations (4)–(7) is derived for sizing purposes to compute the first harmonics
and the relation with the average capacitor voltages. The equation below shows VAC1 (first
harmonic) the relation of line current (IL ), firing angle (α), and the initial and final voltage
of the capacitor (E). E is defined as open capacitor voltage.
For capacitive mode.
2 IL
VAC1 = 2.E.cos(α) + (π − 2α − sin(2.α)) (4)
π 2.C.ω
InFigure
In Figure8,8,the
thepower
powerline
lineisisrepresented
representedas asaacurrent
currentsource
source(I(ILL),), and
and the
the two
two con-
con-
verters (inverters) at any given moment can be represented as a capacitor
verters (inverters) at any given moment can be represented as a capacitor (C1 and/or C2) (C1 and/or C2)
connected through a small impedance, representing the power
connected through a small impedance, representing the power semiconductor switches’semiconductor switches’
impedance during
impedance during conduction
conduction (R (RDSON
DSON ) )plus
plusthe
thebus
busbar and
bar and itsits
connections,
connections, which
whichis the
is
lumped
the lumped impedance
impedance defined as Zas
defined IGBTZat each
IGBT at converter.
each It is
converter. clear
It isthese
clear equivalent
these imped-
equivalent
ances are not
impedances arelinear and have
not linear a higha dependency
and have high dependency on temperature,
on temperature, and may significantly
and may signifi-
differ differ
cantly from from
one toone another. However,
to another. However, the voltage drops
the voltage across
drops acrossthem
them areare
quite
quitesmall
smallas
compared to the capacitor voltage at line frequencies,
as compared to the capacitor voltage at line frequencies, so so the capacitor voltage tends
voltage tends to to
dominatethe
dominate thecurrent
currentsharing
sharingasasseen
seenbelow.
below.
For any capacitor:
𝑉 = 𝐼(𝑡)𝑑𝑡
Differences in semiconductors’ turn-on and turn-off times are due to slight differences
during the manufacturing process and are accentuated as semiconductors’ aging takes
place. Different usages, such as in the example in Figure 4b, where each of the SSSCs in
series has different conduction times, imply that the IGBTs will not age at the same rate
Energies 2022, 15, x FOR PEER REVIEW
over time [16,17]. 10 of 17
These inductors are small, on the order of several of microhenries, and the criterion
for how to dimension them is explained below.
The criterion
completely is:
or partially on. This situation can lead to a shoot-through wherein the di/dt is
V
only being controlled by the bus bars’Lsmall= Linductance.
∆t To prevent a rapid current(10)
in-
∆I
crease, an alternate inductor L is added to the topology, enabling di/dt control.
where:Figure 9b shows four inductors L between the two inverters. Generally, all inductors
haveVthe
L = same
Module nominal
value. voltage; of L can be carried out based on:
The selection
∆I = Line current;
(a) the DC bus voltage level
∆t = 50% of the semiconductor turn-off time.
(b) the time when the two switches are inappropriately connected (typical worst-case
The general goal of the power systems industry is to connect multiple IGBTs in parallel
switching transient overlap between the top and bottom switches), and
(Figure 9a) to achieve higher continuous current conduction ratings. As discussed in the
(c) the transient current handling capability of the IGBTs selected.
previous section, paralleling of H-bridges (Figure 4a) in addition to IGBTs, gives extra
The inductors can be split into two to make the design of both inverter units identical
advantages over only paralleling IGBTs directly, but presents some challenges previously
to each other. The specification of L is denoted in Equation (10),
introduced and further reviewed below.
Figure9.9.Embedding
Figure Embedding paralleling
paralleling strategy from dices to modules
modules to
to converters
converters with
withinductive
inductiveand
and
resistivebalancing
resistive balancingnetwork
network(R (R and
and L).L). (a)
(a) Four
Four parallel
parallel modules
modules form
form one
one IGBT;
IGBT; (b)
(b) One
One converter
converter
leg(red
leg (reddotted
dottedline
lineon
onpanel
panel(b))
b) isisformed
formedby byfour
fourmodules
modulesasasindicated
indicatedin
intop
topportion
portionof
ofpanel
panela,(a),
or
bottom circuit diagram of panel
or bottom circuit diagram of panel (a).a
The
In theequalizer networks
ideal case, can be are
two inverters extended toconnected
directly more thanat two converters.
their In contrast,
AC terminals, whereasthe
two inductors
their capacitor L and the terminals
terminals of theinconverter
are connected parallel. can be generalized
In real circuits the in the same
capacitor fashion
voltages
for multiple
could converters
be different, in parallel,
generating butcurrent;
a large in the case of thethis
to limit resistors R, both
current, the network needs
converters area
special geometrical
connected arrangement.
through resistances Figure
R (see 10 shows
Figure 9b). Thehow the network
purpose equalizer
of having is extended
R in the circuit is
toequalize
to three and five
the DCconverters in parallel.
voltage that develops across the capacitors C1 and C2 before and after
voltage injection. Adding resistor R, as in Figure 9b, mitigates the effect resulting when all
the IGBTs in parallel inverters perform differently during transient; i.e., they turn on and
off at different times. The selection of the value of R is described in Equation (9).
The second problem introduced in the previous section occurs when there are different
turn-on and turn-off times across the IGBTs, which can create a shoot-through. To explain
this further, let’s consider the example where the positive and negative rails of the DC bus
are connected in transients when T11 and T42 (from Figure 9b) are either completely or
Energies 2022, 15, 4666 10 of 16
partially on. This situation can lead to a shoot-through wherein the di/dt is only being
controlled by the bus bars’ small inductance. To prevent a rapid current increase, an
alternate inductor L is added to the topology, enabling di/dt control.
Figure 9b shows four inductors L between the two inverters. Generally, all inductors
have the same value. The selection of L can be carried out based on:
(a) the DC bus voltage level,
Figure(b)9.the
Embedding paralleling
time when the twostrategy from
switches aredices to modules toconnected
inappropriately converters(typical
with inductive and
worst-case
resistive balancing network (R and L). (a) Four parallel modules form one IGBT; (b) One converter
switching transient overlap between the top and bottom switches), and
leg (red dotted line on panel b) is formed by four modules as indicated in top portion of panel a, or
(c) the transient current handling capability of the IGBTs selected.
bottom circuit diagram of panel a
The inductors can be split into two to make the design of both inverter units identical
to each other. The specification of L is denoted in Equation (10).
The equalizer networks can be extended to more than two converters. In contrast, the
The equalizer networks can be extended to more than two converters. In contrast, the
two inductors L and the terminals of the converter can be generalized in the same fashion
two inductors L and the terminals of the converter can be generalized in the same fashion
for multiple converters in parallel, but in the case of the resistors R, the network needs a
for multiple converters in parallel, but in the case of the resistors R, the network needs a
special geometrical arrangement. Figure 10 shows how the network equalizer is extended
special geometrical arrangement. Figure 10 shows how the network equalizer is extended
to three and five converters in parallel.
to three and five converters in parallel.
Figure 10. Resistive equalizer networks for three and five inverter networks. (a) Detailed three
converters in paralleling; (b) Simplified view of five converters in paralleling.
Voltage_DC_C1 Voltage_DC_C1
900 Time (s) 900 Time (s)
800 800
700 700
600 600
500 500
400 400
300 300
0 10m 20m 30m 40m 50m 0 10m 20m 30m 40m 50m
OR PEER REVIEW Time (s)
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Time (s)
Figure 12.12.
Figure PSIM output
PSIM outputvoltage
voltage and currentfor
and current for(a)(a)capacitive;
capacitive;
(b) and (b) inductive
inductive injection mode.
injection mode.
The voltage injected for the first harmonic approximation and presented in Equations
(4) and (6) is compared using several open voltages (E). The open voltages are varied from
300 to 800 V, and three conditions are calculated for injection capacitive (CAP) and induc-
tive (IND) modes. The first condition consists of computing the first harmonic of the in-
jected RMS voltage by using Equations (4) and (6), which is denoted as IND-F and CAP-
F for inductive and capacitive first harmonic voltage, respectively. The second condition
consists of determining the same first harmonic but computed by simulation (S1), where
the capacitive and inductive first harmonic voltages are denoted CAP-S1 and IND-S1, re-
spectively. The last condition uses PSIM as well, to compute the total RMS of the injected
wave that includes all the harmonics generated for the no sinusoidal shape and is defined
as CAP-RMS and IND-RMS as total harmonics capacitive or inductive voltage, respec-
tively.
Figure 13 compares the formula results with the simulation. As can be seen, both
results are nearly the same, mainly because the simulation does not have an ideal capaci-
tor, bus bar, and IGBTs with an RDSon of 1 ohm, but it includes its parasitic component.
These results validate the derivation of the relationship between E and the injected AC
voltage. They provide an important tool for setpoint in open-loop control and design in
general.
Figure 13. Comparison of the
Figure
Another first harmonics
13. Comparison
critical aspect and
of the first totalresults
harmonics
of these Vrms
and by simulation
total Vrms
is that byRMS
the and theoretical
simulation
value and calcula-
is theoretical calculation
very similar to the first
tion in capacitive andininductive mode.
capacitive and inductive mode.
harmonics, denoting a low harmonic content; it is very low for the capacitor, reaching only
3%, while for inductive
Another mode,
critical aspect it is slightly
of these results ishigher,
that thereaching
RMS value10% on average.
is very similar toThe
the capacitor
first
7.2. Self-Balancingmode
and Network
can inject Equalizer
about 12% under
more Time Delay
reactive powerin Semiconductor
than the inductive injection
harmonics, denoting a low harmonic content; it is very low for the capacitor, reaching only can.
The proposed3%, while for inductive
self-balanced system mode, it is slightly
is tested at a higher,
low PWM reaching 10% on average.
switching The capacitor
frequency of
mode can inject about 12% more reactive power than the inductive
360 Hz, and its simulation is shown Figure 14a. Top plots of this figure show the inductive injection can.
1k 1k
A
0 0
V
-1k -1k
A 0 0
-1k -1k
Icir Icir
Time (s) Time (s)
2.5
40n
A 0 0
-40n
-2.5
0 10m 20m 30m 40m 50m 0 10m 20m 30m 40m 50m
V_AC_Injected ILine/2
V_AC_Injected ILine/2
1k
1k
A 0
0
V -1k
-1k
1k 1k
0 0
2020-02-14 SWG-063
A -1k -1k
Icir Icir
Time (s) Time (s)
40
2
0 0
-2 -40
A
0 10m 20m 30m 40m 50m 0 10m 20m 30m 40m 50m
(c) Time (s) (d) Time (s)
Figure14.
Figure Outputsof
14.Outputs ofthe
thesystem
systemwith:
with:(a)
(a)two
twoidentical
identicalconverters;
converters;(b)
(b)Converter
Converter22with
with20%
20%higher
higher
impedancethan
impedance thanconverter
converter1;1;(c)
(c)20%
20%different
differentcapacitors’
capacitors’banks;
banks;(d)
(d)10%
10%different
differentcapacitors’
capacitors’bank
bank
and
and11us
usIGBTs’
IGBTs’ time
time delay.
delay.
To verify
The the effectiveness
simulation in Figure 15ofisthe self-balance
a repetition ofmechanisms, Converter
Case (d) from Figure 142 without
(S2) is assigned
R and
L, which means R is infinite (open circuit), and L is zero (short circuit) to show the IGBTs,
with 20% more impedance across all its components, including RDSON from all effec-
the bus bar,
tiveness and
of the the capacitors’
proposed internal
balancing parasitic
network. impedances.
The results shownFigure 14b15
in Figure shows that even
demonstrates
afterthe
that increasing
current in alleach
Converter 2 parameters
converter grows over by2520%,
kA,the
anddominant
the IGBTseffect
are of the capacitor
subject to over
bank is that it creates a very similar current in both converters,
voltages close to 2 kV; thus, both conditions will destroy the IGBTs. with a difference of less
than 2%, showing the effectiveness of the proposed technology, independent of natural
differences in converters due to manufacturing and aging. Note that the circuit current
(ICIR) is less than 200 mA. Figure 14c shows the unbalances in the capacitor banks when
they are 20% different, with C1 = 10 mF and C2 = 8 mF. The capacitors’ proportional
difference is transferred to the current, but the parallel converters work in a stable fashion.
The current IS1 increases by 10%, and IS2 reduces by the same amount, accounting for a
total of 20% variation between the capacitances. The circulating current (ICIR) grows to 1.5
A, demonstrating a stable system. The three previous examples indicate how the circulating
current can be used as feature indicator of premature aging of the capacitor banks.
Energies 2022, 15, 4666 14 of 16
A more demanding test is combining two major unbalanced conditions. The first is
a 10% difference in the capacitor banks, setting C1 = 10 mF and C2 = 9 mF, and, more
critically, the second is a forced 1 us delay in the turn-on command of IGBTs T11 and T21 in
Converter 1. Figure 14d shows that the current of each converter becomes distorted, but
in a nearly balanced and complementary fashion. The only unbalance is in proportion to
the corresponding differences in the capacitors’ bank and the transient unbalance due to
the switching delay that is reduced by the equalizer network. The circulating current, ICIR ,
shows a fast peak of 40 A. and an RMS value less than 8 A.
The simulation in Figure 15 is a repetition of Case (d) from Figure 14 without R and L,
which means R is infinite (open circuit), and L is zero (short circuit) to show the effectiveness
of the proposed balancing network. The results shown in Figure 15 demonstrates that
Energies 2022, 15, x FOR PEER REVIEW 15 ofthe
17
current in each converter grows over 25 kA, and the IGBTs are subject to over voltages
close to 2 kV; thus, both conditions will destroy the IGBTs.
V_AC_Injected ILine/2
2k
1k
-1k
IS1 -IS2
Time (s)
20k
10k
-10k
-20k
Figure 15. Repetition of case (d) from Figure 14 without balancing network.
Icir1-Icir3
15
10
5
0
-5
-10
-15
IS1 IS3
2k Time (s)
1k
0
-1k
-2k
IS1-IS3
80 Time (s)
40
0
-40
-80
0 10m 20m 30m 40m 50m
Time (s)
Figure
Figure 16. Evaluation
Evaluation of
of the
the network
network equalizer
equalizer tolerance to variation.
8. Conclusions
8. Conclusions
The viability
The viability of
of the
the scalable
scalable architecture
architecture to
to alleviate
alleviate and
and improve
improve congested
congested power
power
transmission lines based on a modular transformerless self-balanced SSSC
transmission lines based on a modular transformerless self-balanced SSSC (TSB-SSSC) is (TSB-SSSC)
is proposed
proposed andand validated
validated by simulation.
by simulation. An inductive
An inductive and resistive
and resistive equalizer
equalizer network
network com-
compensates for the unsymmetric operation of each converter caused by
pensates for the unsymmetric operation of each converter caused by manufacturing pro-manufacturing
process,
cess, aging,
aging, and/or
and/or semiconductor
semiconductor gating
gating delays.The
delays. Thenetwork
networkequalizer’s
equalizer’sfundamental
fundamental
operation principles are described, and criteria for resistive and inductive components’
operation principles are described, and criteria for resistive and inductive components’
selection and
selection and arrangement
arrangementare areestablished.
established.The
Themathematical
mathematicalanalysis forfor
analysis one pulse
one voltage
pulse volt-
injection for inductive and capacitive mode was demonstrated and verified in simulations.
age injection for inductive and capacitive mode was demonstrated and verified in simu-
lations.
Funding: This research received no external funding.
Institutional
Funding: ThisReview Board
research Statement:
received Not funding.
no external applicable.
Informed Consent
Institutional Statement:
Review Not applicable.
Board Statement: Not applicable.
Informed Statement:Not
ConsentStatement:
Data Availability Notapplicable.
applicable.
Data Availability Statement:
Acknowledgments: Notthanks
The author applicable.
Govind Chavan for his contribution on the symmetrical
arrangement of the inductor equalizer network, and him and Shreesha Adiga Manoor for their time
Acknowledgments: The author thanks Govind Chavan for his contribution on the symmetrical ar-
discussing the presented architecture. Thanks to Haroon Inam for his vision, leadership, and support
rangement of the inductor equalizer network, and him and Shreesha Adiga Manoor for their time
in this project, and lastly, many thanks to technical writer Bridget Heneghan for her excellent editing
discussing the presented architecture. Thanks to Haroon Inam for his vision, leadership, and sup-
of this work.
port in this project, and lastly, many thanks to technical writer Bridget Heneghan for her excellent
editing
Conflictsof of
this work. The author declares no conflict of interest.
Interest:
Conflicts of Interest: The author declares no conflict of interest.
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