LM01-ECEC

0224

Module Overview
Module Overview

Introduction
Amplifiers are circuit that can make a weak signal to have enough power at the output to be
process by the intended receiver. These signals vary in frequency. An amplifier can be
designed to accept a certain range of frequency and reject other signal outside of its range.
This is called Amplifier Frequency Response. A fundamental knowledge needed in the
analysis of frequency response of amplifiers is the AC analysis of the transistor. In this
module a thorough AC analysis of BJT and FET will be covered in preparation for the study
of amplifier frequency response.

• Topic 01: BJT AC Analysis

• Topic 02: JFET and MOSFET AC Analysis

Learning Outcomes
• Analyze and solve problems on BJT and FET AC circuits

Minimum Technical Skills Requirement

The module requires a basic knowledge in analyzing algebraic equation, trigonometric
equation, analytic geometry and basic electricity.

Learning Management System

✓ ECE 2A google classroom link; https://classroom.google.com/u/3/c/Mjc0NjQzOTkwNTE5
✓ ECE 2B google classroom link; https://classroom.google.com/u/3/c/Mjc0NjQ3Nzc4ODMz

Duration
(Specify the number of hours allotted for this module. Likewise, specify the number of hours allotted per
topic. In a separate sheet, a calendar depicting all the deadlines and due dates may be provided for
progress monitoring.)

• Topic 01: BJT AC Analysis 7.5 hours

• Topic 02: JFET and MOSFET AC Analysis 3.0 hours

Delivery Mode
The delivery mode of this module will be done in online platform. It will be the combination
of synchronous and asynchronous learning.

Module Requirement with Rubrics

The following criteria and the corresponding percentage shall be used to assess problem
solving in quiz and take home activity as assessment tool or task.

Criteria Description %
Able to translate the thought of the problem into
Understanding circuit diagram or any visual drawing that signifies 15%
student’s understanding of the problem.

Interpretation Able to establish what is asked in the problem and 25%

Learning Module 04: Electronics 1: Transistor AC Analysis 1

 apply appropriate mathematical equation/formula
Able to solve the problem through solutions with
Execution mathematical strategies and have arrived at the 60%
Module Overview

correct answer

TOTAL 100%

Pre-Assessment

Instruction: Select the best answer. Write the complete answer (do not include the letter) of
the chosen answer in a separate sheet of paper. Scanned copy or take a picture of your answer
sheet and submit it to our google classroom acct. Don’t forget to write your name at the upper
left most part of your answer sheet. Use A4 bond paper.

1. Which of the following amplifier is considered linear?

a. Class A
b. Class B
c. Class C
d. Either A or B
2. The voltage gain of an emitter follower configuration is
a. Unity
b. Zero
c. Very high
d. Moderate
3. The two-transistor class B power amplifier is commonly called
a. Push pull amplifier
b. Dual amplifier
c. Symmetrical amplifier
d. Differential amplifier
4. A transistor amplifier has high output impedance because
a. Emitter is heavily doped
b. Collector is wider than emitter or base
c. Collector has reverse bias
d. Emitter has forward bias
5. Which configuration has the lowest current gain?
a. Common base
b. Common collector
c. Common emitter
d. Emitter follower
6. Which is not basic BJT amplifier configuration?
a. Common drain
b. Common base
c. Common emitter
d. Emitter follower
7. Which configuration has the highest voltage gain?
a. Common base
b. Common collector
c. Common emitter
d. Emitter follower

Learning Module 04: Electronics 1: Transistor AC Analysis 2

 8. Voltage gain is the ratio of _____________.
a. Output voltage over output current
b. Output voltage over input current
Module Overview

c. Output voltage over input voltage

d. Output voltage over output impedance
9. What is the main consideration in the output stage of an amplifier?
a. Power output
b. Voltage gain
c. Power gain
d. Current gain
10. Which configuration has the highest voltage gain?
a. Common drain
b. Common source
c. Common gate
d. Source follower
11. If AV is 50 and Ai is 200, what is the power gain of a common emitter amplifier
a. 10000
b. 0.25
c. 4
d. 500000
12. The efficiency of class AB operation has a maximum of between ______ percent.
a. 90 to 100%
b. 60 to 80%
c. 50 to 78.5%
d. 40.5 to 60%
13. The capacitor in transistor circuit act as ___________during AC analysis.
a. Short circuit
b. Open circuit
c. Very low impedance component
d. Grounded circuit
14. The gain of FET is dependent on____________.
a. Transconductance
b. Input impedance
c. Emitter current
d. Source current
15. By passing source resistor in an FET would amplifier would result to a______.
a. High power gain
b. High current gain
c. Low voltage gain
d. Instability.
16. By passing emitter resistor in a BJT would amplifier would result to a______.
a. High power gain
b. High current gain
c. Low voltage gain
d. Instability.
17. A multistage amplifier uses at least how many transistors?
a. One
b. Three
c. Four

Learning Module 04: Electronics 1: Transistor AC Analysis 3

 d. Two
18. The input of a common drain amplifier is measured at ___________.
a. Source terminal
Module Overview

b. Drain terminal
c. Emitter terminal
d. Gate terminal
19. The output of a common source amplifier is measured at ______________.
a. Source terminal
b. Drain terminal
c. Emitter terminal
d. Gate terminal
20. Which of the following amplifier configuration has the highest power gain
a. Common drain
b. Common emitter
c. Common gate
d. Source follower

*** Nothing Follows***

Learning Module 04: Electronics 1: Transistor AC Analysis 4

 Course
LM01-ECEC
Packet

1.1 0224

Learning Module 01

Amplifier Circuit
Analysis
Course Packet 1.1

BJT Amplifier Circuits

Knowledge Area Code : BEC

Course Code : ECEC0224
Learning Module Code : LM01-ECEC0224
Course Packet Code : LM01-ECEE0224-1.1

Learning Module: Purposive Communication 3

 Course Packet 1.1
Course Packet 1.1

BJT Amplifier Circuits

Introduction
The DC analysis of BJT establishes the operating point of the transistor. In this section, small
signal and large signal analysis of BJT amplifier will be covered. The student will be
introduced on the conversion of BJT to its AC equivalent circuit. The design considerations of
small signal and large signal amplifier will also be learned.

Objectives
• Describe the AC equivalent circuit of BJT and explain the characteristics of each amplifier
configurations.
• Solve BJT amplifier circuit parameters.

Learning Management System

✓ ECE 2A google classroom link; https://classroom.google.com/u/1/c/MTE3NDg1ODQ3NDg0
✓ ECE 2B google classroom link; https://classroom.google.com/u/1/c/MTE3NDg1ODQ3NDkx

Duration
• Topic 01: BJT AC Analysis 7.5 hours
(2 hours self-directed learning with practical exercises
and 1 hour assessment)

Delivery Mode
The delivery mode of this module will be done in online platform. It will be the combination
of synchronous and asynchronous learning.

Assessment with Rubrics

The following criteria and the corresponding percentage shall be used to assess
Course Packet Discussion Forum / Virtual Recitation

ONLINE DISCUSSION RUBRICS

SCORE
Criteria
10 30 60 80 100

Sometimes Consistently
Promptness Seldom Often respond More often
respond to respond to
and respond to to post and respond to
discussion post in less
initiative discussion some posting post and all
and most of than 12 hours.
and late are within 24 posting are less
(30%) the posting Demonstrate
posting. hours than 24 hours
are late. self-initiative.

Delivery of Utilizes Errors in Few Most of the All post are

Post poor spelling and grammatical post are grammatically

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 3

 (20%) spelling grammar and spelling grammatically correct with no
and evidenced in errors are correct with spelling errors.
grammar in several post. noted in some rarely
Course Packet 1.1

all post; All post. misspelling.

post appear
“hasty”

Consistently
Rarely post Most posts are Frequently posts topics
Rarely post
topics and short in length posts topic that related to the
topics and
Relevance of offer no and offer are related to subject matter.
always
Post further slight insight discussion Cites
makes
insight into into the topic content and additional
(50%) irrelevant
the topic with with quite prompts references
remarks to
occasional relevant to the further related to topic
the topic.
off-topics subject matter. discussion. to clarify the
idea.

Requirement with Rubrics

You are required to post your idea or opinion based from the argument posted by the faculty
on Google Classroom stream page. This is an open online discussion where students in this
class are encourage to participate and post their idea open-mindedly.

Readings
1. Floyd, T. L. (2012). Electronic Devices (9th ed.). Prentice Hall.Supplemental reading
on an introduction to digital system to further understand the lesson
2. Malvino, A.P., Bates, D. J. (2015). Electronics Principles (8th ed.). McGraw – Hill
Education.
Shcultz, M. E. (2015). Grob’s Basic Electronics (Engineering Technologies and the Trades)
(12th ed.). McGraw – Hill Education.

Requirement with Rubrics

The finals requirement in this module is a comprehensive essay examination discussing the
key concepts stated in the learning outcome.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 4

 Lesson Proper

BJT Analysis
Course Packet 1.1

Introduction
In previous course packet, we use capital letters for the subscript of DC parameters. For the
following discussion, lower case subscript will be used to designate AC parameters. Table 1
show the example designation of AC parameter.

Table 1: Sample designation of DC and AC parameters of BJT.

DC parameters AC Parameters
IE Ie
IC Ic
IB Ib
VC Vc
VE Ve
VB Vb
VCE Vce

Small Signal Analysis of BJT

An amplifier must be operated at linear region to provide an exact replica of the input signal.
This is called Linear Amplifier. One design consideration in small signal analysis is that the
transistor must be carefully bias at the center of the AC load line. Figure 1.1 shows the DC
load line of a linear amplifier. It can be observed that the Q – point is at the center of the load
line and the output signal is the exact replica of the input signal. A phase inversion of 1800
occurs between the base voltage and the collector voltage.

Figure 1.1: AC load line of a Linear Amplifier

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 5

 Hybrid (𝒉 – parameter)
Transistor manufactures commonly provides hybrid parameter (h - parameter) in the
transistor data sheet. These parameters can describe some operating condition of the
Course Packet 1.1

transistor. Table 2 shows the list of h – parameter and its corresponding description while
Table 3 shows the different h – parameters for the three BJT amplifier configurations.

Table 2: The four common h - parameters

h - Parameter Description Condition
hi Input impedance Output shorter

hr Voltage feedback ratio Input open

hf Forward current gain Output shorted

ho Output admittance Input open

Table 3: h – parameters for common – base, common – collector and common – emitter
Configuration Description
Common – Base hib ,hrb ,hfb ,hob
Common – Collector hic ,hrc ,hfc ,hoc
Common – Emitter hie ,hre ,hfe ,hoe

r – parameter
The r – parameter model is the transistor model that will be used on the succeeding
discussion in this course packet. Table 4 shows the different r – parameters and its
description. The parameter 𝑟𝑏′ has very small value that it can be neglected and replace by a
short circuit. The parameter 𝑟𝑐′ is usually in the range of hundred of kilo ohms. This large
amount of resistance can be replaced by an open circuit. Applying this approximation in r –
parameter model would simplify the AC equivalent circuit of BJT like what is shown in
Figure 4.2. The left figure shows the general r – parameter model including all the r –
parameters while the figure on the right shows a simplified r – parameter model where r –
parameters are replace with its approximate equivalent circuit.

Table 4: r - parameters
r - Parameter Description Characteristics
𝜶𝒂𝒄 𝐼 Current gain almost equal to
Alpha ac ( 𝑐⁄𝐼 )
𝑒
1
𝜷𝒂𝒄 𝐼 High current gain
Beta ac( 𝑐⁄𝐼 )
𝑏

𝒓′𝒆 AC emitter resistance 26 𝑚𝑉

𝑟𝑒′ =
𝐼𝐸
𝒓′𝒃 AC base resistance Can be replace by short
circuit
𝒓′𝒄 𝒐𝒓 𝒓𝒐 AC collector resistance Can be replace by open circuit

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 6

Course Packet 1.1

Figure 1.2: Generalized r – parameter model (left) and simplified r – parameter model (right)

Converting BJT to it AC equivalent circuit

Now that the AC equivalent circuit of BJT has been discussed, it is now time to convert the
BJT to its AC equivalent circuit. The AC equivalent circuit will be the basis of all ac analysis
equations. Figure 1.3 shows the conversion of BJT to tis AC equivalent circuit. Notice that the
collector side of BJT is replace by a dependent current source (diamond symbol). It shows that
the output collector current is controlled by the base current, hence BJT is called “current
controlled device”.

Figure 1.3: AC equivalent circuit of BJT

Amplifier Configurations
The BJT amplifier configuration is categorized in the manner of the placement of input and
output. The input of the amplifier is the AC input signal and the output is the AC output
signal.
1. Common – Emitter
✓ The input is placed at the base and the output is taken at the collector.
✓ Emitter terminal is “common” to the input and output side.
✓ Figure 1.4a shows a voltage divider bias, common emitter amplifier circuit.
The input a signal is coupled by a capacitor. The output collector terminal
has also a capacitor before any load can be connected. The purpose of having
a capacitor coupling at the input and output side is to preserve the DC bias
operating point.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 7

 ✓ Output voltage signal has 1800 phase inversion
✓ Power gain (Ap) is equal to the product of current gain and voltage gaine.
Course Packet 1.1

Figure 1.4a: Voltage divider bias, common emitter amplifier

Figure 1.4b: AC equivalent circuit of voltage divider common emitter amplifier

circuit
Equations for Voltage divider bias Common Emitter Circuit:

Input impedance (Zi):

𝑅′ = 𝑅1 ||𝑅2
𝒁𝒊 = 𝑹′ ||𝜷𝒓′𝒆

Output impedance (Zo):

𝑍𝑜 = 𝑅𝐶 ||𝑟𝑜
𝒁𝒐 ≅ 𝑹𝑪 ; 𝒊𝒇 𝒓𝒐 ≥ 10R𝑪 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑪 ||𝑹𝑳 ; (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):

𝑽𝒐 −𝑹𝑪
𝑨𝒗 = = ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝒓𝒆
𝑽𝒐 −𝑹𝑪 ||𝑹𝑳
𝑨𝒗 = = ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝒓𝒆

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 8

 Current Gain (Ai):
𝑰𝒐 𝜷𝑹𝑩 𝒓𝒐
𝑨𝒊 = =
𝑰𝒊 (𝒓𝒐 + 𝑹𝑪 )(𝑹𝑩 + 𝜷𝒓𝒆 )
Course Packet 1.1

𝑨𝒊 ≅ 𝜷| 𝒓𝒐 ≥10R𝑪 , R𝑩≥10𝜷𝒓𝒆
Power Gain (Ap):
𝑨𝒑 = 𝑨𝒗 𝑨𝒊

2. Common – Collector
✓ Also known as “Emitter Follower Circuit”
✓ Input signal is connected at the base and output is taken at the emitter.
✓ Collector is common at the input and output side of the circuit.
✓ There is no phase inversion at the output signal.
✓ High current gain but low voltage gain (A v is almost equal to 1)
✓ Power gain (Ap) is approximately equal to current gain (A i)

Figure 1.5a: Fixed bias common – collector amplifier circuit

Figure 1.5b: AC equivalent circuit of fixed bias common – collector amplifier

Equations for Fixed bias Common Collector Circuit:

Input impedance (Zi):

𝒁𝒊 = 𝑹𝑩 ||𝒁𝒃

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 9

 𝑍𝑏 = 𝛽𝑟𝑒 + (𝛽 + 1)𝑅𝐸
𝑍𝑏 ≅ 𝛽(𝑟𝑒 + 𝑅𝐸 )
𝑍𝑏 ≅ 𝛽𝑅𝐸
Course Packet 1.1

Output impedance (Zo):

𝒁𝒐 = 𝑹𝑬||𝒓𝒆
𝒁𝒐 ≅ 𝒓𝒆 | 𝑹𝑬 >>𝒓𝒆
Voltage Gain (AV):

𝑽𝒐 𝑹𝑬
𝑨𝒗 = =
𝑽𝒊 𝑹𝑬 + 𝒓𝒆
𝑉𝑜
𝐴𝑣 = ≅ 1| 𝑅𝐸 >>𝑟𝑒, R𝐸 +𝑟𝑒 ≅𝑅𝐸
𝑉𝑖
Current Gain (Ai):
𝒁𝒊
𝑨𝒊 = −𝑨𝒗
𝑹𝑬
Power Gain (Ap):
𝑨𝒑 ≅ 𝑨𝒊

3. Common – Base
✓ Input signal is connected at the emitter and output is taken at the collector.
✓ Base is common at the input and output side of the circuit.
✓ There is no phase inversion at the output signal.
✓ High voltage gain but low current gain (A i is almost equal to 1)

Figure 1.6a: Fixed bias common – base amplifier circuit

Figure 1.6b: AC equivalent circuit of fixed bias common – base amplifier

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 10

 Equations for Fixed bias Common Base Circuit:
Course Packet 1.1

Input impedance (Zi):

𝒁𝒊 = 𝑹𝑬 ||𝒓𝒆

Output impedance (Zo):

𝒁𝒐 = 𝑹 𝑪
Voltage Gain (AV):

𝑽𝒐 𝜶𝑹𝑪 𝑹𝑪
𝑨𝒗 = = ≅
𝑽𝒊 𝒓𝒆 𝒓𝒆

Current Gain (Ai):

𝑰𝒐
𝑨𝒊 = = −𝜶 ≅ −𝟏
𝑰𝒊
Power Gain (Ap):
𝑨𝒑 ≅ 𝑨𝒗

Example:
1. Determine the following AC parameter of a common emitter amplifier circuit.
a. r’e
b. Input impedance
c. Output impedance
d. Current gain
e. Voltage gain
f. Power gain

Solution:
Apply DC analysis to determine r’e:
Test if approximate analysis is applicable:
𝛽𝐷𝐶 𝑅𝐸 ≥ 10𝑅2
90(1𝑘Ω) ≥ 10(4.7𝑘Ω)
90𝑘Ω) ≥ 47𝑘Ω); therefore, approximate analysis can be used

𝑅2 4.7𝑘Ω
𝑉𝐵 = ( ) 𝑉𝐶𝐶 = ( ) 15𝑉 = 2.64𝑉
𝑅1 + 𝑅2 22𝑘Ω + 4.7𝑘Ω

𝑉𝐵 − 0.7𝑉 2.64𝑉 − 0.7𝑉

𝐼𝐸 = = = 1.94𝑚𝐴
𝑅𝐸 1𝑘Ω

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 11

 Solving for 𝑟𝑒′ :
26 𝑚𝑉 26𝑚𝑉
𝑟𝑒′ = = = 𝟏𝟑. 𝟒𝛀
Course Packet 1.1

𝐼𝐸 1.94𝑚𝐴

Solving for input impedance:

22𝑘Ω(4.7𝑘Ω)
𝑅′ = 𝑅1 ||𝑅2 = = 3.87𝑘Ω
22𝑘Ω + 4.7𝑘Ω

3.87𝑘Ω(13.4Ωx100)
𝑍𝑖 = 𝑅′ ||𝛽𝑟𝑒′ = = 𝟗𝟗𝟓. 𝟑𝟔𝛀
3.87𝑘Ω + (13.4Ωx100)

Solving for output impedance:

𝑍𝑜 = 𝑅𝐶 = 𝟐. 𝟐𝒌𝛀

Solving for voltage gain:

−𝑅𝐶 −2.2𝑘Ω
𝐴𝑣 = = = 𝟏𝟔𝟒. 𝟏𝟖
𝑟𝑒 13.4Ω

Solving for current gain:

𝑨𝒊 ≅ 𝜷 = 𝟏𝟎𝟎

Solving for power gain:

𝐴𝑝 = 𝐴𝑣 𝐴𝑖 = 164.18(100) = 𝟏𝟔𝟒𝟏𝟕. 𝟗𝟏

dB value of power gain:

𝐴𝑝(𝑑𝐵) = 10 log 𝐴𝑝 = 10 log 16417.91 = 𝟏𝟎𝟒𝟐. 𝟏𝟓 𝒅𝑩

2. Determine the following AC parameter of a common collector amplifier circuit.

a. r’e
b. Input impedance
c. Output impedance
d. Voltage gain

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 12

 Solution:
Apply DC analysis to determine r’e:
Test if approximate analysis is applicable:
Course Packet 1.1

𝛽𝐷𝐶 𝑅𝐸 ≥ 10𝑅2
90(1𝑘Ω) ≥ 10(4.7𝑘Ω)
90𝑘Ω) ≥ 47𝑘Ω; therefore, approximate analysis can be used

𝑅2 4.7𝑘Ω
𝑉𝐵 = ( )𝑉 = ( ) 5.5𝑉 = 1.76𝑉
𝑅1 + 𝑅2 𝐶𝐶 10𝑘Ω + 4.7𝑘Ω

𝑉𝐵 − 0.7𝑉 1.76𝑉 − 0.7𝑉

𝐼𝐸 = = = 1.06𝑚𝐴
𝑅𝐸 1𝑘Ω

Solving for 𝑟𝑒′ :

26 𝑚𝑉 26𝑚𝑉
𝑟𝑒′ = = = 𝟐𝟒. 𝟓𝟑𝛀
𝐼𝐸 1.06𝑚𝐴

Solving for input impedance:

10𝑘Ω(4.7𝑘Ω)
𝑅′ = 𝑅1 ||𝑅2 = = 3.2𝑘Ω
10𝑘Ω + 4.7𝑘Ω

𝑍𝑏 = 𝛽𝑟𝑒 = 100(24.53) = 2.45 𝑘Ω

3.2𝑘Ω(2.45𝑘Ω)
𝑍𝑖 = 𝑅′||𝑍𝑏 = = 𝟏. 𝟑𝟗 𝒌𝛀
3.2𝑘Ω + 2.45𝑘Ω

Solving for output impedance:

1𝑘Ω(24.53Ω)
𝑍𝑜 = 𝑅𝐸 ||𝑟𝑒 = = 𝟐𝟑. 𝟗𝟒𝛀
1𝑘Ω + 24.53Ω

Solving for voltage gain:

𝑉𝑜 𝑅𝐸 1𝑘Ω
𝐴𝑣 = = = = 𝟎. 𝟗𝟖
𝑉𝑖 𝑅𝐸 + 𝑟𝑒 1𝑘Ω + 24.53Ω

3. Determine the following AC parameter of a common collector amplifier circuit.

a. r’e
b. Input impedance
c. Output impedance
d. Voltage gain

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 13

 Solution:
Apply DC analysis to determine r’e:
Test if approximate analysis is applicable:
Course Packet 1.1

𝛽𝐷𝐶 𝑅𝐸 ≥ 10𝑅2
200(620Ω) ≥ 10(10𝑘Ω)
124𝑘Ω ≥ 100𝑘Ω; therefore, approximate analysis can be used

𝑅2 10𝑘Ω
𝑉𝐵 = ( )𝑉 = ( ) 24𝑉 = 7.5𝑉
𝑅1 + 𝑅2 𝐶𝐶 10𝑘Ω + 22𝑘Ω

7.5𝑉 − 0.7𝑉 7.5𝑉 − 0.7𝑉

𝐼𝐸 = = = 10.97𝑚𝐴
𝑅𝐸 620Ω
Solving for 𝑟𝑒′ :

26 𝑚𝑉 26𝑚𝑉
𝑟𝑒′ = = = 𝟐. 𝟑𝟕𝛀
𝐼𝐸 10.97𝑚𝐴

Input impedance (Zi):

620Ω(2.37Ω)
𝑍𝑖 = 𝑅𝐸 ||𝑟𝑒 = = 𝟐. 𝟑𝟔𝛀
620Ω + 2.37Ω

Output impedance (Zo):

𝑍𝑜 = 𝑅𝐶 = 𝟏. 𝟐𝒌𝛀
Voltage Gain (AV):

𝑉𝑜 𝛼𝑅𝐶 𝑅𝐶 1.2𝑘Ω
𝐴𝑣 = = ≅ = = 𝟓𝟎𝟖. 𝟒𝟕
𝑉𝑖 𝑟𝑒 𝑟𝑒 2.36Ω

dB value of voltage gain:

𝐴𝑣(𝑑𝐵) = 20 log 𝐴𝑣 = 10 log 508.47 = 𝟓𝟒. 𝟏𝟑 𝒅𝑩

Multi – Stage Amplifier

The multi – stage amplifier or can be also called “cascaded amplifier”. This type of
configuration is used to further increase the fain of the input signal. Figure 4.7a shows the
block diagram of a multi – stage amplifier circuit and Figure 4.8b shows the schematic
diagram of a two-stage amplifier circuit. The equation below shows how to compute for the
overall voltage gain (𝐴′𝑣 ) and in decibels (𝐴′𝑣(𝑑𝐵) ).

Equation of the overall voltage gain:

𝐴′𝑣 = 𝐴𝑣1 𝐴𝑣2 … 𝐴𝑣𝑛
Overall voltage gain in decibels (dB):
𝐴′𝑣(𝑑𝐵) = 𝐴𝑣1(𝑑𝐵) + 𝐴𝑣2(𝑑𝐵) + 𝐴𝑣3(𝑑𝐵) + ⋯ 𝐴𝑣𝑛(𝑑𝐵)

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 14

Course Packet 1.1

Figure 4.7a: Block diagram of multi – stage amplifier

Figure 4.7a: Schematic diagram of multi – stage amplifier

Power Amplifiers
Power amplifiers are called large signal amplifiers because it requires large amount of power
compare to a small signal amplifier. The power amplifier has a different design consideration
to that of the small signal amplifier. In small signal amplifier, the replication of the input
signal is very important. However, in large signal amplifier, the main concern is the amount
of power and efficiency of the amplifier circuit.

Power Dissipation in Power Amplifiers

✓ DC Quiescent Power:
𝑷𝑫𝑸 = 𝑰𝑪𝑸 𝑽𝑪𝑬𝑸
Where:
𝐼𝐶𝑄 − 𝑐𝑜𝑙𝑙𝑒𝑐𝑡𝑜𝑟 𝑄 − 𝑝𝑜𝑖𝑛𝑡 𝑐𝑢𝑟𝑟𝑒𝑛𝑡
𝑉𝐶𝐸𝑄 − 𝑐𝑜𝑙𝑙𝑒𝑐𝑡𝑜𝑟 𝑡𝑜 𝑒𝑚𝑖𝑡𝑡𝑒𝑟 𝑄 − 𝑝𝑜𝑖𝑛𝑡 𝑣𝑜𝑙𝑡𝑎𝑔𝑒
✓ Output Power:
𝑽𝒄(𝐦𝐚𝐱) = 𝑰𝑪𝑸 𝑹𝒄
Where:
𝑉𝑐(max) − 𝑀𝑎𝑥𝑖𝑚𝑢𝑚 𝑐𝑜𝑙𝑙𝑒𝑐𝑡𝑜𝑟 𝑣𝑜𝑙𝑡𝑎𝑔𝑒
𝑅𝑐 − 𝑐𝑜𝑙𝑙𝑒𝑐𝑡𝑜𝑟 𝐴𝐶 𝑒𝑞𝑢𝑖𝑣𝑙𝑎𝑛𝑒𝑡 𝑟𝑒𝑠𝑖𝑠𝑡𝑎𝑛𝑐𝑒

𝑽𝑪𝑬𝑸
𝑰𝒄(𝐦𝐚𝐱) =
𝑹𝒄
𝑷𝒐𝒖𝒕(𝐦𝐚𝐱) = 𝑽𝒄(𝐦𝐚𝐱) 𝑰𝒄(𝐦𝐚𝐱)

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 15

 ✓ Efficiency:
𝑷𝒐𝒖𝒕
𝜼𝒎𝒂𝒙 =
𝑷𝑫𝑪
Course Packet 1.1

Classes of Amplifier
1. Class A
✓ Q – point is biased at the center of the load line.
✓ The transistor is on during the full input cycle.
✓ Efficiency is up to 25%.

Figure 1.8a: Load line of a class A amplifier

Equation:

✓ Power Gain:
𝑷𝑳 𝑹𝒊𝒏
𝑨𝑷 = = 𝑨𝟐𝒗 ( )
𝑷𝒊𝒏 𝑹𝑳
✓ DC Quiescent Power:
𝑷𝑫𝑸 = 𝑰𝑪𝑸 𝑽𝑪𝑬𝑸
✓ Output Power:
𝑷𝒐𝒖𝒕(𝐦𝐚𝐱) = 𝟎. 𝟓𝑰𝑪𝑸 𝑽𝑪𝑬𝑸

2. Class B
✓ Q – point is biased at the cut – off.
✓ It is uses as push – pull amplifier where two class B transistors are used.
Transistor Q1 is on and Q2 is off during the 1st half off the cycle and Q2 turns
on and Q1 turns off during the 2nd half of the input cycle as shown in Figure
4.8b.
✓ The output of the two transistor is combined at the load.
✓ The transistor is on during only half of the input cycle and turns off at the
next half.
✓ It experiences cross over distortion.
✓ Efficiency is up to 50%.

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Figure 1.8b: Schematic diagram of class B push – pull amplifier

Cross – over distortion

The cross – over distortion is present in a class B push pull amplifier and it is
illustrated in Figure 1.8c. This cross – over distortion is introduced because of the
barrier potential present at the base emitter junction of each transistor. When the
input signal became less than 0.7V (for silicon diode) the two transistor Q1 and Q2 is
off at the same time.

Figure 4.8c: Cross – over distortion at the output of Class B push – pull amplifier

Equations: (Valid for class B and class AB amplifiers)

𝑽𝑪𝑪
𝑰𝒄(𝒔𝒂𝒕) =
𝑹𝑳
𝑷𝒐𝒖𝒕 = 𝟎. 𝟐𝟓𝑰𝒄(𝒔𝒂𝒕) 𝑽𝑪𝑪

3. Class AB Push – pull Amplifier

✓ Q – point is biased just above the cut – off.
✓ Figure 4.8d shows the schematic diagram of class AB push – pull amplifier.
Two diodes D1 and D2 are used to bias the base – emitter junctions of the
transistor Q1 and Q2. This keep the two transistors slightly on even there are
no input signal.
✓ Efficiency is maximum at 79%.

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Figure 1.8d: Schematic diagram of class AB push – pull amplifier (left) and DC load line
(right)

4. Class C
✓ It is biased below the cut – off.
✓ The transistor only conducts less than 1800 of the input signal as show in
figure 4.8e.
✓ Efficiency is up to 99.99%
✓ Power dissipation and efficiency:
𝒕
➢ 𝑷𝑫(𝒂𝒗𝒈) = ( 𝑻𝒐𝒏 ) (𝑷𝑫(𝒐𝒏)) 𝑤ℎ𝑒𝑟𝑒 𝑃𝐷(𝑜𝑛) = 𝐼𝑐(𝑠𝑎𝑡) 𝑉𝑐𝑒(𝑠𝑎𝑡)
𝟎.𝟓𝑽𝟐𝑪𝑪
➢ 𝑷𝒐𝒖𝒕 = 𝑹𝒄
𝑷𝒐𝒖𝒕
➢ 𝜼=𝑷
𝒐𝒖𝒕 +𝑷𝑫(𝒂𝒗𝒈)

Figure 1.8e:Class C amplifier schematic diagram (left), Output signal (center), Loadline (right)

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 18

 Activity Sheet 1.1
Activity Sheet 1.1

Determine the amplifier configuration, re, Zin, Zout, Av, Ai and Ap for the circuit shown below:
a.

b.

c.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 19

 d.
Activity Sheet 1.1

e.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 20

 Assessment
Assessment

To be uploaded via google classroom.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 21

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Packet

4.2 0214

Learning Module

Amplifier Circuit
Analysis
Course Packet 1.2

FET Amplifier Circuits

Knowledge Area Code : BSEC

Course Code : ECEC0224
Learning Module Code : LM01-ECEC0224
Course Packet Code : LM01-ECEC0224-1.2

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Course Packet 1.2

Course Packet 1.2

FET Amplifier Circuits

Introduction
The previous course packet has shown the characteristics of a BJT amplifier. The BJT exhibits
a very large voltage gain especially for common – base and common emitter. IT can be very
useful in amplifying very low ac signal. However, the current controlled device nature of BJT
made the BJT to become unstable at high power applications. The FET offers an excellent
voltage gain and offers stability due to it high impedance nature. This section will cover the
characteristics of JFET and MOSFET as an amplifier. The characteristics of these amplifiers
will be compared to each other and to the characteristics of BJT.

Objectives
• Explain the characteristics of JFET amplifier configurations.
• Solve JFET amplifier circuit parameters.
• Explain the characteristics of MOSFET amplifier configurations.
• Solve MOSFET amplifier circuit parameters.

Learning Management System

✓ ECE 2A google classroom link; https://classroom.google.com/u/1/c/MTE3NDg1ODQ3NDg0
✓ ECE 2B google classroom link; https://classroom.google.com/u/1/c/MTE3NDg1ODQ3NDkx

Duration
• Topic 02: JFET and MOSFET AC Analysis 4.5 hours

(3.5 hours self-directed learning with practical exercises

and 1 hour assessment)

Delivery Mode
The delivery mode of this module will be done in online platform. It will be the combination
of synchronous and asynchronous learning.

Assessment with Rubrics

The following criteria and the corresponding percentage shall be used to assess
Course Packet Discussion Forum / Virtual Recitation

ONLINE DISCUSSION RUBRICS

SCORE
Criteria
10 30 60 80 100

Promptness Seldom Sometimes Often respond More often Consistently

and respond to respond to to post and respond to respond to
initiative discussion discussion some posting post and all post in less

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(30%) and late and most of are within 24 posting are less than 12 hours.
posting. the posting hours than 24 hours Demonstrate
are late. self-initiative.
Course Packet 1.2

Utilizes
poor Few Most of the
Errors in
Delivery of spelling grammatical post are All post are
spelling and
Post and and spelling grammatically grammatically
grammar
grammar in errors are correct with correct with no
(20%) evidenced in
all post; All noted in some rarely spelling errors.
several post.
post appear post. misspelling.
“hasty”

Consistently
Rarely post Most posts are Frequently posts topics
Rarely post
topics and short in length posts topic that related to the
topics and
Relevance of offer no and offer are related to subject matter.
always
Post further slight insight discussion Cites
makes
insight into into the topic content and additional
(50%) irrelevant
the topic with with quite prompts references
remarks to
occasional relevant to the further related to topic
the topic.
off-topics subject matter. discussion. to clarify the
idea.

Requirement with Rubrics

You are required to post your idea or opinion based from the argument posted by the faculty
on Google Classroom stream page. This is an open online discussion where students in this
class are encourage to participate and post their idea open-mindedly.

Readings
1. Floyd, T. L. (2012). Electronic Devices (9th ed.). Prentice Hall.Supplemental reading
on an introduction to digital system to further understand the lesson
2. Malvino, A.P., Bates, D. J. (2015). Electronics Principles (8th ed.). McGraw – Hill
Education.
Shcultz, M. E. (2015). Grob’s Basic Electronics (Engineering Technologies and the Trades)
(12th ed.). McGraw – Hill Education.

Requirement with Rubrics

The finals requirement in this module is a comprehensive essay examination discussing the
key concepts stated in the learning outcome.

Learning Module 01: Electronics 2: Amplifier Circuit Analysis 15

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Lesson Proper

FET AC Analysis
Course Packet 1.2

Introduction
In previous course packet, we use capital letters for the subscript of DC parameters. For the
following discussion, lower case subscript will be used to designate AC parameters. Table 1
show the example designation of AC parameter.

Table 1: Sample designation of DC and AC parameters of FET.

DC parameters AC Parameters
IS Is
ID Id
IG Ig
VD Vd
VS Vs
VG Vg
VGS Vgs

FET Equivalent Circuit

Similar to BJT, one fundamental aspect of ac analysis is to define the FET AC model and the
AC equivalent circuit of the FET. Since JFET and D – MOSFET share the same operating
characteristics, their AC equivalent circuit is also the same. The only difference of JFET and D
– MOSFE is that in D – MOSFET, the value of VGS can be positive. Figure 1.1 shows the AC
equivalent circuit of the FET. Since FET has very high input impedance, the input side of the
circuit is represented by an open circuit. The drain current is represented by a current source
that is controlled by transconductance (g m) and AC gate to source voltage (Vgs). Remember
that FET is a voltage-controlled device. Parallel to the current source is the AC drain dynamic
resistance (rd). Tis resistance is commonly ignored because it has large amount of resistance.

Figure 1.1: AC load line of a Linear Amplifier

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FET Small Signal Model

The major aspect of the FET small signal analysis is that the drain current is controlled by the
amount of voltage at the gate to source. The change in gate to source voltage will result to a
Course Packet 1.2

drain current and is describe by the equation below:

∆𝐼𝐷 = 𝑔𝑚 ∆𝑉𝐺𝑆

∆𝑰𝑫
𝒈𝒎 =
∆𝑽𝑮𝑺
Figure 1.1 show the graphical representation of the transconductance (g m). It can be observed
that the transconductance (gm) is the first derivative of the Shockley’s equation with respect to

Vgs.
Figure 1.2: Graphical representation of gm

Equation of Transconductance (gm):

𝟐𝑰𝑫𝑺𝑺 𝑽𝑮𝑺
𝒈𝒎 = (𝟏 − )
|𝑽 𝑷 | 𝑽𝑷

2𝐼𝐷𝑆𝑆
𝑔𝑚0 = → 𝑓𝑜𝑟 𝑉𝐺𝑆 = 0
|𝑉𝑃 |

𝑽𝑮𝑺
𝒈𝒎 = 𝒈𝒎𝟎 (𝟏 − )
𝑽𝑷

JFET/DMOSFET Amplifier Configurations

The FET amplifier configuration is categorized in the manner of the placement of input and
output. The input of the amplifier is the AC input signal and the output is the AC output
signal.
4. Common – Source
✓ The input is placed at the gate and the output is taken at the drain.
✓ Source terminal is “common” to the input and output side.
✓ Figure 1.2a shows a selft bias, common source amplifier circuit. The input a
signal is coupled by a capacitor. The output collector terminal has also a
capacitor before any load can be connected. The purpose of having a

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capacitor coupling at the input and output side is to preserve the DC bias
operating point.
✓ Output voltage signal has 1800 phase inversion
Course Packet 1.2

✓ Power gain (Ap) is equal to the product of current gain and voltage gain.

Self – Bias bypass RS

Figure 1.2a: Self – bias, common source amplifier

Figure 1.2b: AC equivalent circuit of a self – bias, common drain amplifier circuit

Equations:

Input impedance (Zi):

𝒁𝒊 = 𝑹 𝑮

Output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 ||𝑟𝑜
𝒁𝒐 ≅ 𝑹𝑫 ; 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑫||𝑹𝑳 ; (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):
𝒇𝒐𝒓 𝒓𝒅 ≥ 10R𝑫
𝑽𝒐
𝑨𝒗 = = −𝒈𝒎 (𝑹𝑫//𝒓𝒅 ) ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊

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𝑽𝒐
𝑨𝒗 = = −𝒈𝒎 (𝑹𝑫//𝑹𝑳) ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊
Course Packet 1.2

Self – Bias unbypass RS

Another variation of a JFET common source amplifier is the unbypass source resistor (R S).
1.2c shows the AC equivalent circuit. It can be observed that the RS now is part of the AC
equivalent circuit.

Figure 1.2c: AC equivalent circuit of self – bias unbypass RS

Equations:

Input impedance (Zi):

𝒁𝒊 = 𝑹 𝑮

Output impedance (Zo):

𝒇𝒐𝒓 𝒓𝒅 ≥ 10R𝑫
𝒁𝒐 ≅ 𝑹𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑫||𝑹𝑳 ; (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):
𝒇𝒐𝒓 𝒓𝒅 ≥ 10R𝑫
𝑽𝒐 −𝒈𝒎 𝑹𝑫
𝑨𝒗 = = ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝟏 + 𝒈 𝒎 𝑹 𝑺
𝑽𝒐 −𝒈𝒎 (𝑹𝑫//𝑹𝑳)
𝑨𝒗 = = ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝟏 + 𝒈 𝒎 𝑹𝑺

Voltage Divider Bias

The last variation of common source JFET amplifier that will be discussed in this section is the
voltage divider bias. Figure 1.3a shows the schematic diagram of common source JFET
voltage divider bias circuit and Figure 1.3b shows the AC equivalent circuit. The input side of
the AC equivalent circuit is consisting of R1 and R2. The output side remains the same as the
self – bias circuit. The resistance RS is not part of the AC equivalent circuit because it has a
bypass capacitor.

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Course Packet 1.2

Figure 1.3a: Schematic diagram of common source JFET voltage divider bias circuit

Figure 1.3b: AC equivalent circuit of common source JFET voltage divider bias circuit

Equations:

Input impedance (Zi):

𝒁𝒊 = 𝑹𝟏 //𝑹𝟐

Output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 ||𝑟𝑑
𝒁𝒐 ≅ 𝑹𝑫 ; 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑫||𝑹𝑳 ; (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):

𝑽𝒐
𝑨𝒗 = = −𝒈𝒎 (𝑹𝑫//𝒓𝒅 ) ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊
𝑽𝒐
𝑨𝒗 = = −𝒈𝒎 (𝑹𝑫//𝑹𝑳) 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊

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Example:

1. Consider a JFET self – bias circuit shown below with the following DC operating
Course Packet 1.2

point, VGSQ = -2V, IDQ = 5.625 mA. Determine:

a. gm
b. Zi
c. Zo
d. Av

Solution:

Solving for transconductance (gm):

2𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 2(10 𝑚𝐴) −2𝑉

𝑔𝑚 = (1 − )= (1 − ) = 𝟏. 𝟖𝟖 𝒎𝑺
|𝑉𝑃 | 𝑉𝑃 |−8𝑉 | −8𝑉

Solving for input impedance (Zi):

𝑍𝑖 = 𝑅𝐺 = 𝟏𝑴𝛀

Solving for output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 = 𝟐𝒌𝛀

Solving for voltage gain (Av): assume very large amount of rd

𝑉𝑜
𝐴𝑣 = = −𝑔𝑚 𝑅𝐷 = 1.88 𝑚𝑆(2𝑘Ω) = −3.75
𝑉𝑖
*Notice that the voltage gain of FET amplifier is smaller that of the BJT.

2. Consider a JFET unbypass RS self – bias circuit shown below with the following DC
operating point, VGSQ = -2.6V, IDQ = 2.6 mA. Determine
a. gm
b. Zi
c. Zo
d. Av

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Solution:
Course Packet 1.2

Solving for transconductance (gm):

2𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 2(10 𝑚𝐴) −2.6𝑉

𝑔𝑚 = (1 − )= (1 − ) = 𝟏. 𝟖𝟖 𝒎𝑺
|𝑉𝑃 | 𝑉𝑃 |−6𝑉 | −6𝑉

Solving for input impedance (Zi):

𝑍𝑖 = 𝑅𝐺 = 𝟏𝑴𝛀

Solving for output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 = 𝟑. 𝟑𝒌𝛀

Solving for voltage gain (Av): assume very large amount of rd :

𝑉𝑜 −𝑔𝑚 𝑅𝐷 −1.88 𝑚𝑆(3.3𝑘Ω)
𝐴𝑣 = = = = −𝟐. 𝟏𝟔
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆 1 + 1.88 𝑚𝑆(1𝑘Ω)

3. Consider a D - MOSFET voltage divider – bias circuit shown below with the
following DC operating point, VGSQ = 0.35V, IDQ = 7.6 mA. Determine
a. gm
b. Zi
c. Zo
d. Av

Solution:

Solving for transconductance (gm):

2𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 2(6 𝑚𝐴) 0.35𝑉

𝑔𝑚 = (1 − )= (1 − ) = 𝟒. 𝟒𝟕 𝒎𝑺
|𝑉𝑃 | 𝑉𝑃 |−3𝑉 | −3𝑉

Solving for input impedance (Zi):

𝑅1 110𝑀Ω(10𝑀Ω)
𝑍𝑖 = = = 𝟗. 𝟏𝟕𝑴𝛀
𝑅2 110𝑀Ω + 10𝑀Ω

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Solving for output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 = 𝟏. 𝟖𝒌𝛀
Course Packet 1.2

Solving for voltage gain (Av): assume very large amount of rd

𝑉𝑜 −𝑔𝑚𝑅𝐷 −4.47 𝑚𝑆(1.8𝑘Ω)
𝐴𝑣 = = = = 𝟒. 𝟖𝟐
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆 1 + 4.47 𝑚𝑆(150Ω)

5. Common – Drain
✓ Also known as “Source Follower Circuit”
✓ Input signal is connected at the gate and output is taken at the source.
✓ Drain is common at the input and output side of the circuit.
✓ There is no phase inversion at the output signal.
✓ High current gain but low voltage gain (A v is almost equal to 1)
✓ Power gain (Ap) is approximately equal to current gain (A i)

Figure 5.4a: Self – bias common – drain amplifier circuit

Figure 5.4b: AC equivalent circuit of Self – bias common – drain amplifier

Equations for Fixed bias Common Collector Circuit:

Equations:

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Input impedance (Zi):

𝒁𝒊 = 𝑹 𝑮
Course Packet 1.2

Output impedance (Zo):

𝒇𝒐𝒓 𝒓𝒅 ≥ 10R𝑫
𝟏
𝒁𝒐 ≅ 𝑹𝑺// (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒈𝒎
𝟏
𝒁𝒐 = 𝑹𝑺// //𝑹𝑳 ; (𝒍𝒐𝒂𝒅𝒆𝒅)
𝒈𝒎
Voltage Gain (AV):
𝒇𝒐𝒓 𝒓𝒅 ≥ 10R𝑫
𝑽𝒐 𝒈 𝒎 𝑹𝑺
𝑨𝒗 = = ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝟏 + 𝒈 𝒎 𝑹 𝑺
𝑽𝒐 𝒈𝒎 (𝑹𝑺//𝑹𝑳)
𝑨𝒗 = = ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊 𝟏 + 𝒈 𝒎 𝑹𝑺

Example:
1. Consider a JFET self – bias circuit shown below with the following DC operating
point, VGSQ = -2.86V, IDQ = 4.56 mA. Determine:
a. gm
b. Zi
c. Zo
d. Av

Solution:

Solving for transconductance (gm):

2𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 2(16 𝑚𝐴) −2.86𝑉

𝑔𝑚 = (1 − )= (1 − ) = 𝟐. 𝟐𝟖 𝒎𝑺
|𝑉𝑃 | 𝑉𝑃 |−4𝑉 | −4𝑉

Solving for input impedance (Zi):

𝑍𝑖 = 𝑅𝐺 = 𝟏𝑴𝛀

Solving for output impedance (Zo):

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1
𝟏 2.2𝑘Ω (2.28𝑚𝑠)
𝑍𝑜 ≅ 𝑹𝑺 // = = 𝟑𝟔𝟓. 𝟔𝟗𝛀
𝒈𝒎 2.2𝑘Ω + ( 1 )
Course Packet 1.2

2.28𝑚𝑠

Solving for voltage gain (Av): assume very large amount of rd

𝑉𝑜 𝑔𝑚 𝑅𝑆 2.28𝑚𝑆(2.2𝑘Ω)
𝐴𝑣 = = = = 𝟎. 𝟖𝟑
𝑉𝑖 1 + 𝑔𝑚 𝑅𝑆 1 + 2.28𝑚𝑆(2.2𝑘Ω)

6. Common – Gate
✓ Input signal is connected at the source and output is taken at the drain.
✓ Gate is common at the input and output side of the circuit.
✓ There is no phase inversion at the output signal.
✓ High voltage gain but low current gain (A i is almost equal to 1)

Figure 5.5a: Self – bias JFET common – gate amplifier circuit

Figure 5.5b: AC equivalent circuit of JFET self – bias common – gate amplifier

Equations:

Input impedance (Zi):

𝟏
𝒁𝒊 = 𝑹𝑺//
𝒈𝒎

Output impedance (Zo):

𝑍𝑜 = 𝑅𝐷 ||𝑟𝑑

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𝒁𝒐 ≅ 𝑹𝑫 ; 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑫 ||𝑹𝑳 ; 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):
Course Packet 1.2

𝑽𝒐
𝑨𝒗 = = 𝒈𝒎 (𝑹𝑫//𝒓𝒅 ) ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊
𝑽𝒐
𝑨𝒗 = = 𝒈𝒎 (𝑹𝑫//𝑹𝑳 ) 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊
Example:
1. Consider a JFET self – bias circuit shown below with the following DC operating
point, VGSQ = -2.2V, IDQ = 2.03 mA. Determine:
a. gm
b. Zi
c. Zo
d. Av
e. Output voltage

Solution:

Solving for transconductance (gm):

2𝐼𝐷𝑆𝑆 𝑉𝐺𝑆 2(10 𝑚𝐴) −2.2𝑉

𝑔𝑚 = (1 − )= (1 − ) = 𝟐. 𝟐𝟓 𝒎𝑺
|𝑉𝑃 | 𝑉𝑃 |−4𝑉 | −4𝑉

Solving for input impedance (Zi):

1
1 1.1𝑘Ω ( )
𝑍𝑖 = 𝑅𝑆 // = 2.25𝑚𝑠 = 𝟑𝟏𝟔. 𝟓𝟓𝛀
𝑔𝑚 1.1𝑘Ω + ( 1 )
2.25𝑚𝑠

Solving for output impedance (Zo):

𝑍𝑜 ≅ 𝑅𝐷
𝒁𝒐 = 𝟑. 𝟔𝒌𝛀

Solving for voltage gain (Av): assume very large amount of rd

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𝑉𝑜
𝐴𝑣 = = 𝑔𝑚 𝑅𝐷 = 2.25𝑚𝑆 (3.6𝑘Ω) = 𝟖. 𝟏
𝑉𝑖
Course Packet 1.2

Solving for output voltage (Vo):

𝑉𝑜 = 𝐴𝑣 𝑉𝑖 = 8.1(40𝑚𝑉 ) = 𝟑𝟐𝟒 𝒎𝑽

E – MOSFET Small Signal Model

The E – MOSFET has very similar AC equivalent circuit to JFET and D – MOSFET. The
difference of E – MOSFET is the AC model for the transconductance.

Equation of Transconductance (gm):

𝑰𝑫 = 𝒌(𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉))𝟐
𝑇𝑟𝑎𝑛𝑠𝑐𝑜𝑛𝑑𝑢𝑐𝑡𝑎𝑛𝑐𝑒 𝑔𝑚 𝑖𝑠 𝑡ℎ𝑒 𝑓𝑖𝑟𝑠𝑡 𝑑𝑒𝑟𝑖𝑣𝑎𝑡𝑖𝑣𝑒 𝑜𝑓 𝑑𝑟𝑎𝑖𝑛 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝐼𝐷 𝑠𝑖𝑚𝑖𝑙𝑎𝑟 𝑡𝑜 𝐽𝐹𝐸𝑇 𝑎𝑛𝑑 𝐷
− 𝑀𝑂𝑆𝐹𝐸𝑇 𝑤𝑖𝑡ℎ 𝑟𝑒𝑠𝑝𝑒𝑐𝑡 𝑡𝑜 𝑔𝑎𝑡𝑒 𝑡𝑜 𝑠𝑜𝑢𝑟𝑐𝑒 𝑣𝑜𝑙𝑡𝑎𝑔𝑒 𝑉𝐺𝑆 .

𝒈𝒎 = 𝟐𝒌(𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉) )

E – MOSFET Drain Feedback Common Source Amplifier

Figure 6.6a shows the schematic diagram for a drain feedback E – MOSFET common source
amplifier and Figure 6.6b is the ac equivalent circuit.

Figure 6.6a: Schematic diagram of drain feedback E – MOSFET

Figure 6.6b: AC equivalent circuit of Figure 6.6a

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Equations:

Input impedance (Zi):

Course Packet 1.2

𝑹𝑭 + 𝒓𝒅 //𝑹𝑫
𝒁𝒊 =
𝟏 + 𝒈𝒎 (𝒓𝒅 //𝑹𝑫)

𝑹𝑭
𝒁𝒊 = ; 𝒊𝒇 𝒓𝒅 ≥ 10R𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝟏 + 𝒈 𝒎 𝑹𝑫

Output impedance (Zo):

𝒁𝒐 = 𝑹𝑭 ||𝑹𝑳||𝒓𝒅
𝒁𝒐 = 𝑹𝑫 ; 𝒊𝒇 𝒓𝒅 𝒂𝒏𝒅 𝑹𝑭 ≥ 10R 𝑫 (𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅)
𝒁𝒐 = 𝑹𝑫||𝑹𝑳 ; 𝒊𝒇 𝒓𝒅 𝒂𝒏𝒅 𝑹𝑭 ≥ 10R𝑫 (𝒍𝒐𝒂𝒅𝒆𝒅)
Voltage Gain (AV):

𝑽𝒐
𝑨𝒗 = = 𝒈𝒎 (𝑹𝑫//𝒓𝒅 //𝑹𝑭 ) ; 𝒖𝒏𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊
𝑽𝒐
𝑨𝒗 = = 𝒈𝒎 (𝑹𝑫 //𝑹𝑳) 𝒊𝒇 𝒓𝒅 𝒂𝒏𝒅 𝑹𝑭 ≥ 10R𝑫 ; 𝒍𝒐𝒂𝒅𝒆𝒅
𝑽𝒊

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Activity Sheet 1.2

Activity Sheet 1.2

1. Consider a JFET self – bias circuit shown below with the following DC operating
point, VGSQ = -3.2V, IDQ = 3 mA. Determine:
a. gm
b. Zi
c. Zo
d. Av

2. Consider a JFET self – bias circuit shown below. Determine:

a. gm
b. Zi
c. Zo
d. Av

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COURSE OUTCOME ASSESSMENT 01

course outcome assessment 01

To be uploaded in google classroom.

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POST ASSESSMENT
post assessment

Pre-Assessment

Instruction: Select the best answer. Write the complete answer (do not include the letter) of
the chosen answer in a separate sheet of paper. Scanned copy or take a picture of your answer
sheet and submit it to our google classroom acct. Don’t forget to write your name at the upper
left most part of your answer sheet. Use A4 bond paper.

1. Which of the following amplifier is considered linear?

e. Class A
f. Class B
g. Class C
h. Either A or B
2. The voltage gain of an emitter follower configuration is
e. Unity
f. Zero
g. Very high
h. Moderate
3. The two-transistor class B power amplifier is commonly called
e. Push pull amplifier
f. Dual amplifier
g. Symmetrical amplifier
h. Differential amplifier
4. A transistor amplifier has high output impedance because
a. Emitter is heavily doped
b. Collector is wider than emitter or base
c. Collector has reverse bias
d. Emitter has forward bias
5. Which configuration has the lowest current gain?
a. Common base
b. Common collector
c. Common emitter
d. Emitter follower
6. Which is not basic BJT amplifier configuration?
a. Common drain
b. Common base
c. Common emitter
d. Emitter follower
7. Which configuration has the highest voltage gain?
a. Common base
b. Common collector
c. Common emitter
d. Emitter follower
8. Voltage gain is the ratio of _____________.

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a. Output voltage over output current

b. Output voltage over input current
c. Output voltage over input voltage
post assessment

d. Output voltage over output impedance

9. What is the main consideration in the output stage of an amplifier?
a. Power output
b. Voltage gain
c. Power gain
d. Current gain
10. Which configuration has the highest voltage gain?
a. Common drain
b. Common source
c. Common gate
d. Source follower
11. If AV is 50 and Ai is 200, what is the power gain of a common emitter amplifier
a. 10000
b. 0.25
c. 4
d. 500000
12. The efficiency of class AB operation has a maximum of between ______ percent.
a. 90 to 100%
b. 60 to 80%
c. 50 to 78.5%
d. 40.5 to 60%
13. The capacitor in transistor circuit act as ___________during AC analysis.
a. Short circuit
b. Open circuit
c. Very low impedance component
d. Grounded circuit
14. The gain of FET is dependent on____________.
a. Transconductance
b. Input impedance
c. Emitter current
d. Source current
15. By passing source resistor in an FET would amplifier would result to a______.
a. High power gain
b. High current gain
c. Low voltage gain
d. Instability.
16. By passing emitter resistor in a BJT would amplifier would result to a______.
a. High power gain
b. High current gain
c. Low voltage gain
d. Instability.
17. A multistage amplifier uses at least how many transistors?
a. One
b. Three
c. Four
d. Two

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18. The input of a common drain amplifier is measured at ___________.

a. Source terminal
b. Drain terminal
post assessment

c. Emitter terminal
d. Gate terminal
19. The output of a common source amplifier is measured at ______________.
a. Source terminal
b. Drain terminal
c. Emitter terminal
d. Gate terminal
20. Which of the following amplifier configuration has the highest power gain
a. Common drain
b. Common emitter
c. Common gate
d. Source follower

*** Nothing Follows***

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Learner’s Feedback Form

Learner’s Feedback Form

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Faculty : __________________________________________________________
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Course Packet : Code : _________ Title : __________________________________

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 I completely get it.  I’m struggling.
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