NATIONAL SCHOOL POLYTECHNIC OF CONSTANTINE

MATERIALS ENGINEERING

TP02:
Band gap determination

REALIZED BY :
 BOUCHETOB Oussama
 BOUDJOUDJOU Ghada
 ZIDANE Oumaima
 BOURA Taki ahmed
 HADDAD Mouna
 BOUCHAREB Manar Wouroud

2023/2024

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 1. INTRODUCTION :
The energy levels, particularly the bandgap width, of
semiconductor-based catalysts affects their ability to
absorb light and catalyze ecologically beneficial
chemical reactions through photocatalysis. The
research focuses on analyzing UV-Vis spectra to
understand the performance variations of the
photocatalysts.
2. OBJECTIVES OF THE EXPERIMENT :
Determine the band gap energy of modified
semiconductor photocatalysts using UV-Vis spectra.
3. SOME EXPLICATIONS:
Quantum well: is a thin layer, typically 5-20 nm thick,
that confines particles like electrons or holes in one
dimension while allowing movement in others. This
confinement, a quantum effect, affects the density of
states and is often achieved using semiconductor layers
with wider band gaps. Quantum wells are crucial in
optoelectronic devices like laser diodes and can be
further enhanced with strain or used in multiples for
increased optical gain or absorption.

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Quantum dots : are tiny semiconductor crystals, usually
2 to 10 nanometers wide, that can change the energy of
light they absorb and emit. They have unique electronic
properties, allowing them to adjust their energy levels
based on their size, which affects their color emission.
Artificial atoms: replicate natural atoms' properties with
enhanced control over physical and chemical traits,
crucial for fundamental quantum research and crafting
cutting-edge technologies like lasers, LEDs, and sensors.
Their versatility holds immense promise across various
domains, spanning from quantum computing to
personalized medicine.
Diffuse reflection:is an optical phenomenon in which
light is reflected in multiple directions from a rough or
irregular surface. Unlike specular reflection, where light
is reflected in a specific direction, diffuse reflection
causes light to scatter in all directions. This creates a
matt surface that is characteristic of unpolished or
textured materials.
Specular reflectance :is the reflection of light at a
specific angle, typically equal to the angle of incidence. It
describes the amount of light reflected in a specific
direction by a smooth, shiny surface.

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Quantum confinement:refers to the phenomenon
where the motion of charge carriers, such as electrons or
holes, is restricted to a very small region in a material,
leading to quantum effects influencing their behavior.
This confinement alters the energy levels and properties
of the carriers, often resulting in unique optical and
electronic properties in nanoscale structures.

4. DETERMINE THE EG OF DEFFIRENT MATERIALS:

Determine Eg: The band gap energy (Eg) can be
calculated from the absorption edge using the equation
Eg = hc/λ, where λ is the wavelength corresponding to
the absorption edge.
MATERIAL LAMDA EG
CdS 556nm 2.23ev
CdS-2 551nm 2.25ev
Fe2O3 514nm 2.41ev
Fe2O3-2 523nm 2.37ev
SAMPLEX 546nm 2.27ev
TiO2 413nm 3.01ev
TiO2-2 419nm 2.95ev
Z9 484nm 2.56ev
We find that the sample X is the CdS-2 , the same Eg.

CdS: has an absorption edge at around 535 nm (2.28

eV). This means that it only absorbs light with

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wavelengths shorter than 535 nm, and light with
wavelengths longer than 510 nm is transmitted.
CdS-2: The absorption spectrum of CdS-2 exhibits several
important features:
1. Ultraviolet (UV) absorption:
An intense absorption peak at around 408nm,
corresponding to the transition from the valence band
(VB) to the conduction band (CB).
2.Visible light absorption:
Weaker absorption in the visible region, with an
absorption edge at around 530 nm.
This absorption is due to electronic transitions between
impurity energy levels and the CB or VB.
Fe2O3: The results indicate that Fe2O3 exhibits intense
absorption in the wavelength range of approximately
400 nm to 420 nm, with an absorption coefficient that
decreases as the wavelength increases towards the
indirect band gap energy of about 2.41 eV.
Fe2O3-2: the absorption bands of iron, noting a main
band between 400 and 500 nm, peaking at around 480
nm, attributed to electron transition from the 3d to the
4f level.
SAMPLEX: The curve shows maximum absorption
between 400 and 470 nm, followed by a rapid decrease
up to 650 nm, then almost zero decrease. This is the
result of energetic and electronic transitions between
different levels.

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TiO2: Titanium dioxide (TiO2) exhibits strong absorption
in the ultraviolet (UV), with absorption thresholds at
approximately 380 nm for rutile and 390 nm for anatase.
This absorption results from the electronic transition
between the valence band (O 2p) and the conduction
band (Ti 3d).
TiO2-2: the result shows that the absorption thresholds
of TiO2-2 around 375 nm for the anatase phase and 410
nm for the rutile phase. The energy of this transition
corresponds to the band gap width of TiO2, which is
approximately 3.2 eV for anatase and 3.0 eV for rutile.
Z9: exhibits several absorption bands in the UV-visible
spectrum, typically between 400 and 800 nm with 3.4 ev
The position and intensity of these bands depend on the
chromophores present in the Z9 molecule.
5. CONCLUSION:
In conclusion, accurately determining the band gap
energy of modified semiconductor photocatalysts using
UV-Vis spectroscopy requires a more nuanced approach
compared to unmodified materials. The standard Tauc
method can be misleading due to the combined
absorption of both the semiconductor and the
introduced modifier.

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