SUP/SUB85N03-07P

New Product Vishay Siliconix

N-Channel 30-V (D-S) 175C MOSFET

   
V(BR)DSS (V) rDS(on) (
) ID (A)a
0.007 @ VGS = 10 V 85 a
30
0.01 @ VGS = 4.5 V 75

D
TO-220AB

TO-263

DRAIN connected to TAB

G D S
Top View
G D S S
SUB85N03-07P
Top View
SUP85N03-07P N-Channel MOSFET

            

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS
20 V

TC = 25C 85a
Continuous Drain Current (TJ = 175C)
175 C) ID
TC = 100C 64
A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25C (TO-220AB and TO-263) 107c
Maximum Power Dissipationb PD W
TA = 25C (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

     

Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 C/W

Junction-to-Case RthJC 1.4

Notes
a. Package limited.
b. Duty cycle  1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).

Document Number: 71147 www.vishay.com
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Vishay Siliconix New Product

            

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 30 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 30 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 30 V, VGS = 0 V, TJ = 175C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.006 0.007
VGS = 10 V, ID = 30 A, TJ = 125C 0.011
D i Source
S
Drain-Source
Drain O State
On S
On-State R i
Resistancea rDS(on)
DS( ) W
VGS = 10 V, ID = 30 A, TJ = 175C 0.015

VGS = 4.5 V, ID = 20 A 0.01

Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 S

Dynamicb
Input Capacitance Ciss 3720
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 715 pF
F
Reverse Transfer Capacitance Crss 370
Total Gate Chargeb Qg 60 120
Gate-Source Chargeb Qgs VDS = 15 V,
V VGS = 10 V
V, ID = 85 A 13 nC
C
Gate-Drain Chargeb Qgd 10
Turn-On Delay Timeb td(on) 11 25
Rise Timeb tr VDD = 15 V
V,, RL = 0 18 W
0.18 70 140
ns
Turn-Off Delay Timeb td(off) ID ^ 85 A,
A VGEN = 10 V V, RG = 2 5W
2.5 50 100
Fall Timeb tf 105 200

Source-Drain Diode Ratings and Characteristics (TC = 25C)c

Continuous Current IS 85
A
Pulsed Current ISM 200

Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.2 1.5 V

Reverse Recovery Time trr IF = 85 A, di/dt = 100 A/ms 55 100 ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.

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2-2 S-00757—Rev. B, 10-Apr-00
 SUP/SUB85N03-07P
New Product Vishay Siliconix

           

Output Characteristics Transfer Characteristics
250 120
VGS = 10 thru 6 V 5V

100
200
I D – Drain Current (A)

I D – Drain Current (A)

80
150

4V 60

100
40
TC = 125C
50
2V 3V 20 25C
–55C
0 0
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

120 0.020

TC = –55C
100
r DS(on) – On-Resistance (
)

25C 0.015
g fs – Transconductance (S)

80
125C
60 0.010 VGS = 4.5 V

VGS = 10 V
40
0.005
20

0 0
0 20 40 60 80 100 0 20 40 60 80 100

ID – Drain Current (A) ID – Drain Current (A)

Capacitance Gate Charge

5000 10

Ciss VDS = 50 V
V GS – Gate-to-Source Voltage (V)

4000 8 ID = 85 A
C – Capacitance (pF)

3000 6

2000 4

Coss
1000 2

Crss
0 0
0 6 12 18 24 30 0 12 24 36 48 60

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 71147 www.vishay.com
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S-00757—Rev. B, 10-Apr-00 2-3
SUP/SUB85N03-07P
Vishay Siliconix New Product

           

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A
1.6
r DS(on) – On-Resistance (W)

I S – Source Current (A)

(Normalized)

1.2 TJ = 150C
10
TJ = 25C
0.8

0.4

0 1
–50 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2

TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

Drain Source Breakdown vs.

Avalanche Current vs. Time Junction Temperature
1000 40

38 ID = 250 mA
100
V(BR)DSS (V)

IAV (A) @ TA = 25C

36
I Dav (a)

10
IAV (A) @ TA = 150C 34

1
32

0.1 30
–50 –25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ – Junction Temperature (C)

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2-4 S-00757—Rev. B, 10-Apr-00
 SUP/SUB85N03-07P
New Product Vishay Siliconix

    
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000

80 10 ms
100
I D – Drain Current (A)

I D – Drain Current (A)

100 ms
60
Limited
10 by rDS(on)
1 ms
40 10 ms
100 ms
dc
20 1 TC = 25C
Single Pulse

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Ambient Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

0.05
0.02
Single Pulse

0.01
10–4 10–3 10–2 10–1 1 10
Square Wave Pulse Duration (sec)

Document Number: 71147 www.vishay.com
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S-00757—Rev. B, 10-Apr-00 2-5
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Revision: 18-Jul-08 1