EEL 3008

Physics of EE
2.8 MOSFETs

EEL 3008 Physics of EE 1

 Outline
• Function/purpose of a transistor
• Metal-oxide-semiconductor
(MOS) gate
– structure and operation
• MOS field-effect-transistor
(MOSFET)
– modes of operation
– I-V equations

EEL 3008 Physics of EE 2

 Need for Electronic Switch
• Consider mechanical switch
– Mechanical valve Control

Input Output

– Electromechanical switch
Control

Input Output

– How many terminals?

EEL 3008 Physics of EE 3

 Solid-State Switch
• Need a variable resistor that can be controlled electrically

Control Gate

Source Drain
Rswitch
• How?
• Hint: Recall conductivity of semiconductor can be changed by orders
of magnitude

EEL 3008 Physics of EE 4

 Key Idea and Structure
• Key Idea:
– Field-effect conductivity modulation, i.e. “Field Effect Transistor” (FET)
• Key Structure:
– Metal-Oxide-Semiconductor (MOS) structure
High-resolution transmission
electron microscope image
Metal
Oxide (Insulator)

Poly-Crystalline
+
4
+
4
+
3
+
4
+
4
Si Gate Electrode

+ + + + + Amorphous
3 4 4 3 4
SiO2 Dielectric
+ + + + +
4 3 4 4 3

P-type Semiconductor
Crystalline
Si Channel
Ref: Jaeger, Intro to Microelectronic Fabrication, p.39.

EEL 3008 Physics of EE 5

 Systematic Development of
Enhancement Mode N-channel MOSFET
• Begin with “MOS control gate structure” built on on P-type
semiconductor substrate

• Let’s first look at the MOS control gate structure (“valve”)

EEL 3008 Physics of EE 6

Equilibrium VGate=0
Uniform distribution of
majority holes and Metal
minority electrons.
Oxide (Insulator)

+ + + + +
4 4 3 4 4

P-type
(P>N) + + + + +
3 4 4 3 4

+ + + + +
4 3 4 4 3 Many more
atoms than
P-type Semiconductor shown

EEL 3008 Physics of EE 7

Depletion IGate=?
VGate>0
Depletion of most majority
holes near oxide by Metal
positive gate voltage !"
(field). Oxide (Insulator) E transverse

+ + + + +
4 4 3 4 4 Wd
?-type Depletion
(few layer
carriers) + + + + +
3 4 4 3 4

P-type + + + + +
4 3 4 4 3

P-type Semiconductor

EEL 3008 Physics of EE 8

Inversion IGate=0
VGate>VThreshold
Not many electrons, BUT
they all collect at
oxide/silicon interface,
Metal !" N-type
‘inversion’ layer
Oxide (Insulator)
creating inversion of
dopant type.
E transverse
+ + + + +
4 4 3 4 4 Wd
N-type Depletion
layer
+ + + + +
3 4 4 3 4

+ + + + +
P-type 4 3 4 4 3

P-type Semiconductor

EEL 3008 Physics of EE 9

 Voltage-Controlled Resistance
• The MOS structure acts as a voltage-controlled resistance (“gate”)
– can change the silicon under the gate from p-type, to neutral, to highly
doped n-type (completely reversible)

• Next, we make a MOS Field-Effect Transistor

– Need to add two more features: a “source” terminal and a “drain”
terminal

EEL 3008 Physics of EE 10

 VGate

VSource Metal VDrain

Oxide
N-channel

N+ Source N+ Drain
+ + + + +
P-type 4 4 3 4 4

+ + + + +
3 4 4 3 4

+ + + + +
P-type 4 3 4 4 3

P-type Semiconductor

VBody
EEL 3008 Physics of EE 11
 VGate
3D Structure
VSource Metal VDrain
IDrain
Oxide Cox tox
N-channel
Carrier mobility, µ
N+ Source
+
N+ Drain
+
W
4 L 4

P-type Semiconductor

VBody
EEL 3008 Physics of EE 12
 MOSFET Conventions
• We now have 4 terminals in our MOSFET
• Connect some voltages and see how it works

For N-channel
Gate

Source Drain
(of electrons) (of electrons)

Body

EEL 3008 Physics of EE 13

 MOSFET Conventions
• By convention, ground the Source and Body terminals
• Note: Electrons flow from Source to Drain è current flows from Drain to Source
(seemingly backwards notation if you’re not careful)…
For N-channel VDS
_-+ +
VGS
_-+ + Gate

ID
Source Drain
(of electrons) (of electrons)

Body

EEL 3008 Physics of EE 14

 Voltage Naming Convention
• Node voltages labeled with single-letter subscript, e.g. VG; these potentials are
always with respect to ground.
• Differential voltages labeled with double-letter subscript, e.g. VGS = VG - VS

VDS = 3V
Example: _-+ + VS =
VGS = 5V VB =
_-+ + VG VG =
ID VD =
VS VD
VGD =
VDG =
VB VSB =

EEL 3008 Physics of EE 15

 VGate<VThreshold
Cut-off
No conducting n-type
inversion layer AND back- VSource Metal VDrain>0
to-back P|N diodes so !"
IDrain=0 Oxide E transverse IDrain=0
N-channel

N+ Source N+ Drain
+ + + + +
P-type 4 4 3 4 4

+ + + + +
3 4 4 3 4

+ + + + +
P-type 4 3 4 4 3

P-type Semiconductor

VBody
EEL 3008 Physics of EE 16
 VGate>VThreshold
Triode
Conducting layer and
small drain voltage result
VSource Metal !" VDrain>0 (small)
in ID that varies with VDS Oxide
E transverse IDrain>0
!"
N-channel

N+ Source E longitudinal N+ Drain

+ + + + +
N-type 4 4 3 4 4 Wd
Depletion
layer
+ + + + +
3 4 4 3 4

+ + + + +
P-type 4 3 4 4 3

P-type Semiconductor

VBody
EEL 3008 Physics of EE 17
 VGate>VThreshold
Saturation
Conducting layer and large
drain voltage causes ID to VSource Metal !" VDrain>>0 (large)
saturate because
conducting channel is Oxide
E transverse IDrain=IDsat
‘pinched’ near drain.
N-channel

N+ Source
!" N+ Drain
+ + E longitudinal
+ + +
N-type 4 4 3 4 4 Wd
Depletion
layer
+ + + + +
3 4 4 3 4

+ + + + +
P-type 4 3 4 4 3

P-type Semiconductor

VBody
EEL 3008 Physics of EE 18
 MOSFET I-V Equations
• One current, ID, that depends on voltages, VGS and VDS.
• Is there really only one current ID?

For N-channel VDS

_-+ +
VGS
_-+ + Gate

ID
Source Drain
(of electrons) (of electrons)

Body

EEL 3008 Physics of EE 19

 N-channel MOSFET I-V Equations

⎧
⎪
⎪ 0 for VGS ≤ VT Cutoff
⎪ ⎡ 1 2⎤
ID = ⎨ k ⎢(VGS −VT ) VDS − VDS ⎥⎦ for VDS ≤ VGS −VT Triode
⎪ ⎣ 2
⎪ 1
⎪
2
k (VGS −VT ) = I Dsat for VDS ≥ VGS −VT Saturation
⎩ 2

• Simplest form is derived from the two-dimensional energy band

model split into two one-dimensional problems using the
transverse and longitudinal electric fields.

EEL 3008 Physics of EE 20

 MOSFET I-V Equation Parameters
VGate

VSource VDrain
⎡ 1 2⎤ Metal
Oxide Cox tox
IDrain
I D = k ⎢(VGS −VT ) VDS − VDS ⎥ for VDS ≤ VGS −VT Carrier mobility, µ
⎣ 2 ⎦ N+ Source
+4 L
N+ Drain
+4 W

W P-type Semiconductor

k = k' = "transconductance parameter" [mA/V 2 ]

L VBody
depends on geometry which circuit designer selects

k ' = µ nCox = "process transconductance parameter" [mA/V 2 ]

and depends on fabrication/manufacturing process

εrε 0 ⎡ F ⎤
carrier mobility Cox = ⎢⎣ 2 ⎥⎦
tox cm

EEL 3008 Physics of EE 21

 Channel Resistance
• For any given mode, we can define channel resistance, RDS:

VDS
RDS =
ID
Triode VGate>VThreshold

Control Gate VSource Metal !" VDrain>0 (small)

Oxide
E transverse IDrain>0
!"
N+ Source E longitudinal N+ Drain
+4 +4 +3 +4 +4
N-type
Source Drain
Rswitch +3 +4 +4 +3 +4

P-type +4 +3 +4 +4 +3

Body
P-type Semiconductor

VBody

EEL 3008 Physics of EE 22

 N-channel MOSFET I-V Curves
Assumptions for next few slides:
VT = 1 V 25
I D-VDS Characteristics of a n-channel MOSFET

k’ = 1 mA/V2 VT = 1 V VGS = 5 V
W = 3 um, L = 1 um 20 k’=1 mA/V2
W=3um, L=1um
Plot I D vs. VDS 15 VGS = 4 V
Triode Region

I D / [mA]
for different VGS
10 Satura&on Region
VGS = 3 V
5

VGS = 2 V
0
Cutoff
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 23

 Cut-off Mode n-channel MOSFET
I D-VDS Characteristics of a n-channel MOSFET
• VGS < VT 25
VT = 1 V
• ID = 0 for any VD k’=1 mA/V2
20
• Why? W=3um, L=1um
15

I D / [mA]
VGS = 0 < VT = 1 V
10

5
ID = 0 for any VDS
0
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 24

 Triode Mode n-channel MOSFET
I D-VDS Characteristics of a n-channel MOSFET
• VGS > VT 25
VT = 1 V
• VDS ≤ VGS – VT k’=1 mA/V2
20
W=3um, L=1um
15

I D / [mA]
VGS
VGS= 2= 2> >VTV=T 1= V
1V
10
⎡ 1 2⎤
(
⎣ 2
)
I D = k ⎢ VGS −VT VDS − VDS ⎥
⎦
5

0
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 25

 Saturation Mode n-channel MOSFET
I D-VDS Characteristics of a n-channel MOSFET
• VGS > VT 25

VT = 1 V
• ID = IDsat for k’=1 mA/V2
20
VDS ≥ VGS – VT W=3um, L=1um
15
VGS = 2 > VT = 1 V
I D / [mA]
10

1 2

5
I D = I Dsat = k VGS −VT
2
( )
ID = IDsat
0
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 26

 N-channel MOSFET ID vs. VDS
I D-VDS Characteristics of a n-channel MOSFET
25
VT = 1 V
ID – VDS k’=1 mA/V2 VGS = 5 V
20

Family of W=3um, L=1um

curves for 15 VGS = 4 V
I D / [mA]
different
values of VGS 10

VGS = 3 V
5

VGS = 2 V
0
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 27

 N-channel MOSFET ID vs. VDS
I D-VDS Characteristics of a n-channel MOSFET
• Three different regions 25

VT = 1 V VGS = 5 V
of operation
20 k’=1 mA/V2
W=3um, L=1um
• Increasing IDSat and 15 VGS = 4 V
Triode Region
VDSat for increasing VGS

I D / [mA]
10 Saturation Region
VGS = 3 V
5

VGS = 2 V
0
Cutoff
0 1 2 3 4 5
V DS /[V]

EEL 3008 Physics of EE 28

 Systematic Development of
Enhancement Mode P-channel MOSFET
• Begin with MOS control gate structure on N-type semiconductor
substrate

• Similarities/Differences to N-channel MOSFET

– Same:
• Field-effect conductivity modulation
– Difference:
• Opposite polarity for charge carrier (holes instead of electrons)
• Everything is “mirror image”
• Be careful with polarity and voltage!

EEL 3008 Physics of EE 29

 VGate=0
Equilibrium
Uniform distribution of
majority electrons and Metal
minority holes.
Oxide (Insulator)

+ + + + +
4 4 5 4 4

N-type
+ + + + +
(N>P) 5 5
4 4 4

+ + + + +
4 5 4 4 5 Many more
atoms than
N-type Semiconductor shown

EEL 3008 Physics of EE 30

Depletion Vgate<0
Depletion of most majority
electrons near oxide by Metal
negative gate voltage !"
(field). Oxide (Insulator) E transverse

+ + + + +
4 4 5 4 4 Wd
?-type Depletion
(few carriers) layer
+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 31

Inversion Vgate<VThreshold
Not many holes, BUT they **VThreshold is negative value |Vgate| > |VThreshold|
all collect at oxide/silicon
interface, creating
Metal !" P-type
‘inversion’ layer
Oxide (Insulator)
inversion of dopant type.
E transverse
+ + + + +
4 4 5 4 4 Wd
P-type Depletion
layer
+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 32

 Voltage-Controlled Resistance
• The MOS structure acts as a voltage-controlled resistance (“gate”)
– can change the silicon under the gate from n-type, to neutral, to highly
doped p-type (completely reversible)

• Next, we make a MOS Field-Effect Transistor

– Need to add two more features: a “source” terminal and a “drain”
terminal

EEL 3008 Physics of EE 33

 VGate

VSource Metal VDrain

Oxide

P+ Source P+ Drain
P-channel

+ + + + +
N-type 4 4 5 4 4

+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 34

 VGate
3D Structure
VSource Metal VDrain
IDrain
Oxide Cox tox
P-channel
Carrier mobility, µ
P+ Source P+ Drain
+
L
+ W
4 4

Note: Opposite direction for positive drain current

compared to n-channel MOSFET

N-type Semiconductor

VBody
EEL 3008 Physics of EE 35
 MOSFET Conventions
• We now have 4 terminals in our MOSFET
• Connect some voltages and see how it works

For P-channel
Gate

Source Drain
(of holes) (of holes)

Body

EEL 3008 Physics of EE 36

 MOSFET Conventions
• By convention, ground the Source and Body terminals.
• Note: ID is defined in opposite direction as compared to the N-channel case

For P-channel VDS Both voltages will be

_-+ + negative values
VGS
_-+ + Gate

ID
Source Drain
(of holes) (of holes)

Body

EEL 3008 Physics of EE 37

 Vgate>VThreshold
Cut-off
No conducting p-type
inversion layer AND back- VSource Metal VDrain<0
to-back P|N diodes so
!"
IDrain=0
Oxide E transverse IDrain=0

P+ Source P+ Drain
P-channel

+ + + + +
N-type 4 4 5 4 4

+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 38

 Vgate<VThreshold
Triode
Conducting layer and
small drain voltage result
VSource Metal !" Vdrain<0 (small)
in ID that varies with VDS
Oxide
E transverse IDrain>0
!"
P+ Source E longitudinal P+ Drain
P-channel

+ + + + +
4 4 5 4 4 Wd
P-type
Depletion
layer
+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 39

 Vgate<VThreshold
Saturation
Conducting layer and large
drain voltage causes ID to VSource Metal !" Vdrain<<0 (large)
saturate because
Oxide IDrain=IDsat
conducting channel is
‘pinched’ near drain.
E transverse
!"
P+ Source P+ Drain
P-channel

+ + E longitudinal
+ + +
4 4 5 4 4 Wd
P-type
Depletion
layer
+ + + + +
5 4 4 5 4

+ + + + +
N-type 4 5 4 4 5

N-type Semiconductor

EEL 3008 Physics of EE 40

 P-channel MOSFET I-V Equations
• Note: Same equations for p-channel and n-channel MOSFETs
• But different equalities since carriers are positive holes instead of
negative electrons

⎧
⎪
⎪ 0 for VGS ≥ VT Cutoff
⎪ ⎡ 1 2⎤
ID = ⎨ k ⎢(VGS −VT ) VDS − VDS ⎥⎦ for VDS ≥ VGS −VT Triode
⎪ ⎣ 2
⎪ 1
⎪
2
k (VGS −VT ) = I Dsat for VDS ≤ VGS −VT Saturation
⎩ 2

EEL 3008 Physics of EE 41

 P-channel MOSFET I-V Curves
Assumptions for next few slides:
VT = -1 V 25
I D-VDS Characteristics of a p-channel MOSFET

k’ = 1 mA/V2 VGS = -5 V VT = -1 V
k’=1 mA/V2
W = 3 um, L = 1 um 20
W=3um, L=1um
Plot I D vs. VDS 15 VGS = -4 V Triode Region

I D / [mA]
for different VGS 10 Satura&on Region
VGS = -3 V
5

VGS = -2 V
0
Cutoff
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 42

 Cut-off Mode p-channel MOSFET
I D-VDS Characteristics of a p-channel MOSFET
25 • VGS > VT
• ID = 0 for any VD
20

15
VGS = 0 > VT = -1 V
I D / [mA]

10

5
ID = 0 for any VDS
0
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 43

 Triode Mode p-channel MOSFET
I D-VDS Characteristics of a p-channel MOSFET
25
• VGS < VT
VT = -1 V
• VDS ≥ VGS – VT
20 k’=1 mA/V2
W=3um, L=1um
15
I D / [mA]

VGS = -2 > VT = -1 V Equivalently

10

⎡ 1 2⎤ VDS ≤ VGS −VT

5 ⎣
( 2
)
I D = k ⎢ VGS −VT VDS − VDS ⎥
⎦

0
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 44

 Saturation Mode p-channel MOSFET
I D-VDS Characteristics of a p-channel MOSFET
25
• VGS < VT
VT = -1 V
k’=1 mA/V2 • ID = IDsat for
VDS ≤ VGS - VT
20
W=3um, L=1um
15
VGS = -2 < VT = -1 V
I D / [mA]

10
Equivalently
1 2 VDS ≥ VGS − VT
5
I D = I Dsat (
= k VGS −VT
2
)
ID = IDsat
0
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 45

 P-channel MOSFET ID vs. VDS
I D-VDS Characteristics of a p-channel MOSFET
25
VT = -1 V
VGS = -5 V k’=1 mA/V2
ID – VDS
20
W=3um, L=1um
15 VGS = -4 V
Family of
curves for
I D / [mA]

10 different
VGS = -3 V values of VGS
5

VGS = -2 V
0
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 46

 P-channel MOSFET ID vs. VDS
I D-VDS Characteristics of a p-channel MOSFET
• Three different 25
VT = -1 V
regions of operation VGS = -5 V
20
k’=1 mA/V2
W=3um, L=1um
• Increasing IDSat and
15 VGS = -4 V Triode Region
|VDSat| for increasing

I D / [mA]
|VGS|
10 Saturation Region
VGS = -3 V
5

VGS = -2 V
0
Cutoff
-5 -4 -3 -2 -1 0
V DS /[V]

EEL 3008 Physics of EE 47

 Takeaways
• MOS gate
– Structure and operation:
equilibrium, depletion, inversion
• MOSFET
– Modes of operation: cutoff, triode,
saturation
– I-V relationship depends on mode
– The effective resistance of the
conduction path is the channel
resistance

EEL 3008 Physics of EE 48