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PN Device Applications
PN Device Applications
Physics of EE
2.7 PN Device Applications
Forward
threshold
voltage
https://learnabout-electronics.org/Semiconductors/diodes_20.php
• Generally a tradeoff
between forward-bias
turn-on voltage and
reverse-bias leakage
http://conceptselectronics.com/diodes/comparison-si-ge-gaas-diodes/
Note: If more than one diode in the circuit, you have to make guesses about
all diodes and check all conditions at the end
100 Ω
5V
VD > 0 EEC EC
EV
i EF
EV
ID
I II III IV
x
Wdepletion power
DriA#Current# absorbed
ID>0" +3# +4# +3# +5#
Diffusion#Current# +4# +5#
+#+#
#### ρ = −qN AA
ρ = +qN DD #
Quasi+neutral#
+4# +4# +4# +4# Quasi+neutral#
+4# +4#
VD
####
#
+4# +3# !"
+4# +4# +5# +4#
W E
VD>0" +" depletion#"
• Posi3ve#voltage#3ps#the#balance,#unleashing#a#flood#of#
posi3ve#diffusion#current.#
EEL 3008 Physics of EE 8
Question on Energy?
• In forward-bias, excess conduction electrons lose energy (equal to
EG) when they combine with holes. Where does this energy go?
VD > 0 EEC EC
i EF
EV EV
I II III IV
Wdepletion
x
+#+#
ρ = −qN AA
VD
####
ρ = +qN DD #
Quasi+neutral#
+4# +4# +4# +4# Quasi+neutral#
+4# +4#
####
#
+4# +3# !"
+4# +4# +5# +4#
W E
VD>0" +" depletion#"
• Posi3ve#voltage#3ps#the#balance,#unleashing#a#flood#of#
posi3ve#diffusion#current.# EEL 3008 Physics of EE 11
P|N Device at Forward Bias
P-TYPE Dri, Current N-TYPE Direct Semiconductor
Ex. GaAs, GaAsP, SiC
E Diffusion Current
VD > 0 EEC EC ID
i EF
EV EV
I II III IV
Wdepletion
x
DriA#Current#
+#+# VD
#### ρ = −qN AA
ρ = +qN DD #
Quasi+neutral#
+4# +4# +4# +4# Quasi+neutral#
+4# +4#
####
#
+4# +3# !"
+4# +4# +5# +4#
W E
VD>0" +" depletion#"
• Posi3ve#voltage#3ps#the#balance,#unleashing#a#flood#of#
posi3ve#diffusion#current.# EEL 3008 Physics of EE 12
Light-Emitting Diode (LED)
+ _
• The color of an LED depends on the band gap
(EG) of the (direct) semiconductor
– Different I-V characteristics
Ref: http://www.electronics-tutorials.ws/diode/diode_8.html
https://en.wikipedia.org/wiki/Light-emitting_diode
http://atclighting.co/images/pages/technology-inside.gif
https://www.ee.co.za/article/led-die-attach-trends-considerations.html
EC Ephoton EC
Ei EG Ei EG
EV EV
Ephoton
LED light is result of electron-hole Light creates an electron-hole pair
recombination (photogeneration) with + and - charge.
ID<0
+ + +
3 4 Op#cal'Current'
3 5 4 5
+
4
+
4
+
Quasi-neutral
4
+
3
- +
4
+
4
!"
+
+
4
+
4
Quasi-neutral
+
4
+
5
+
4
+
4
E
VD=0
EEL 3008 Physics of EE 16
Effect of Light on Shorted P|N Device
P-TYPE N-TYPE
ID
E Optical Current
dark
Ioptical EC EC
Ei
EF VD
I EV
D EV -Ioptical
x
Ephoton light
ID<0
+ + +
3 4 Op#cal'Current'
3 5 4 5
+
4
+
4
+
Quasi-neutral
4
+
3
- +
4
+
4
!"
+
+
4
+
4
Quasi-neutral
+
4
+
5
+
4
+
4
E
V >0D
_
+ Rload
EEL 3008 Physics of EE 19
Solar Cell
• A solar cell (solar panel) is a large array
of P|N junctions specifically designed to
Quasi-neutral
5
4
+
+
produce power
Lp
5
+
+
Op#cal'Current'
_
Ln Wdepletion
+
+
V >0
5
4
+
Rload
!"
E
D
-
3
4
+
+
_
3
+
+
Quasi-neutral
Diode Solar Cell
4
+
+
Igenerated
ID<0
https://energyeducation.ca/encyclopedia/Photovoltaic_cell
ID Rload = ∞
Rload VD
VD Voc
power
supplied!
-Isc
Rload = 0
EEL 3008 Physics of EE 21
Example: Solar Cell
Consider a solar cell with IS = 4x10-12 A, kBT/q = 25.9 mV, and Ioptical = 50 mA.
Calculate the open-circuit voltage and short-circuit current. Sketch the
operating curve on an I-V plot. Then graphically estimate VD, ID for a load
RL=10 Ω.
⎡ ⎛ qV ⎞ ⎤
I D = I S ⎢exp ⎜ D ⎟ −1⎥ − I optical
⎣ ⎝ k BT ⎠ ⎦
Diffusion(Current(
VD < 0 EC
Ei EC
EV FN ID
I II III IV EV
x
Wdepletion
Dri2 Current
-
ρ = −qN AA
+
ρ = +qN DD
Quasi- +4
VD
+4 +4 +4 Quasi-neutral
+4 +4
neutral
+4 +3 +4 !" +4 +5 +4
E
VD<0 - +
ID -
5V VD
Reverse bias dark
+
+ VD
VR
- light
ID -
5V VD
+
+
30 kΩ
VR
-
-VBV
Typically ~pA VD
“knee”
-IZK VD
Operational area