Chapter 4:

1. For a PN junction (n side doped with ND, and p side doped with NA), what is the build-in
potential ?
2. Given charge density  electrical field E(x), and potential V(x), write down the Poisson’s
equation.
3. For an abrupt junction with dopants ND and NA (ND > NA), and depletion region XN and XP,

write down Wdep = ? , Emax = ？when ND>>NA, Wdep = ?

3a. When the junction is reverse biased with Vapp, Wdep = ?

4. For an N+/P junction with a reverse bias Vr, what is the Emax ?
5. For a forward biased PN junction,
A. n(xp) = ? and p(xn) = ?
B. n’ = ? , p’ =?
C. The excess minority carriers are to be recombined. Write down the equations for p’
and n’.
D. From n’ and p’, solve for and write down the diffusion currents and total current.

Chapter 5.
1. Draw the band diagram of a MOS capacitor under flat-band (and label the band gaps,
barrier height, and Fermi level)
2. In accumulation region, write down Vg in terms of VFB, surface potential, and Vox.
A. For an N+ poly gate, P- substrate (with EF – Ev = 0.2eV), VFB = ? and what is the
surface potential in accumulation ?
B. Write down Vox = ? (in terms of Vg, VFB, and surface potential)
3. write down the VT (threshold voltage) in terms of Nsub, VFB, and 
4. In strong inversion, Qinv = ?
5. For a MOS capacitor, draw the quasi-static CV from accumulation, depletion, to inversion
region.
6. For poly delpetion (with depletion thickness Wdpoly), what is the inversion capacitance ?
what is the accumulation capacitance ?