MDF10N60G N-channel MOSFET 600V

MDF10N60G
N-Channel MOSFET 600V, 10A, 0.7Ω

General Description Features

These N-channel MOSFET are produced using advanced  VDS = 600V
Magnachip’s MOSFET Technology, which provides low on-  ID = 10A @ VGS = 10V
state resistance, high switching performance and excellent  RDS(ON) ≤ 0.7Ω @ VGS = 10V
quality.

These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.
 Power Supply
 PFC
 High Current, High Speed Switching

TO-220F
MDF Series
S
`

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 10* A
Continuous Drain Current ID
o
TC=100 C 6.3* A
(1)
Pulsed Drain Current IDM 40* A
TC=25oC 48 W
Power Dissipation PD
Derateabove 25 oC 0.38 W/ oC
Repetitive Avalanche Energy(1) EAR 15.6 mJ
(3)
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 520 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
* Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5
o
C/W
(1)
Thermal Resistance, Junction-to-Case RθJC 2.6

Jan. 2021. Version 1.5 1 Magnachip Semiconductor Ltd.

 MDF10N60G N-channel MOSFET 600V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDF10N60GTH -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 μA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.3A - 0.58 0.7 Ω
Forward Transconductance gfs VDS = 30V, ID = 5.0A - 9 - S
Dynamic Characteristics
Total Gate Charge Qg - 32 -
Gate-Source Charge Qgs VDS = 480V, ID = 10A, VGS = 10V(3) - 8.7 - nC
Gate-Drain Charge Qgd - 12.2 -
Input Capacitance Ciss - 1360 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 7.7 - pF
Output Capacitance Coss - 151 -
Turn-On Delay Time td(on) - 53 -
Rise Time tr VGS = 10V, VDS = 300V, ID = 10A, - 38 -
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 116 -
Fall Time tf - 32 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 10 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 10A, VGS = 0V - - 1.4 V
Voltage
Body Diode Reverse Recovery Time trr - 340 - ns
Body Diode Reverse Recovery IF = 10A, dl/dt = 100A/μs(3)
Qrr - 3.3 - μC
Charge

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤10A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=9.6mH, IAS=10.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

Jan. 2021. Version 1.5 2 Magnachip Semiconductor Ltd.

 MDF10N60G N-channel MOSFET 600V
20 1.0
Vgs=5.5V
18 Notes
=6.0V
1. 250㎲ Pulse Test
=6.5V
16 2. TC=25℃ 0.9
=7.0V
=8.0V
14
ID,Drain Current [A]

=10.0V
=15.0V
0.8

RDS(ON) [Ω ]
12

10
VGS=10.0V
8 0.7

6 VGS=20V

0.6
4

2
0.5
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 5 10 15 20

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

※ Notes : ※ Notes :
Drain-Source Breakdown Voltage
1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 5.0A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

※ Notes :
1. VGS = 0 V
2.250s Pulse test
* Notes ; 10
1. Vds=30V
Reverse Drain Current [A]

10

150℃
IDR
ID(A)

150℃ -55℃ 25℃

25℃ 1
1

0.1 0.1
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jan. 2021. Version 1.5 3 Magnachip Semiconductor Ltd.

 MDF10N60G N-channel MOSFET 600V
10
2400 Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 10A
Coss
Coss = Cds + Cgd
2200 Crss = Cgd
120V
8 300V 2000
VGS, Gate-Source Voltage [V]

480V
1800 Ciss

Capacitance [pF]
1600
6
1400

1200

4 1000
※ Notes ;
800 Crss
1. VGS = 0 V
2. f = 1 MHz
600
2
400

200

0 0
0 5 10 15 20 25 30 35 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area
is Limited by R DS(on)
10 s
D=0.5
1 100 s 0
10 10
1 ms
Thermal Response
ID, Drain Current [A]

10 ms 0.2
100 ms
0.1
Zθ JC(t),

0
10 DC 1s 0.05
-1
10
0.02

※ Notes :
-1
10 0.01 Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
Single Pulse
RΘ JC=2.6℃ /W
TJ=Max rated single pulse
TC=25℃
-2
10
-2 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10
-1 0 1 2
10 10 10 10 t1, Rectangular Pulse Duration [sec]
VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve

12
16000

single Pulse
14000
RthJC = 2.6℃ /W 10
TC = 25℃
12000
ID, Drain Current [A]

8
10000
Power (W)

8000 6

6000
4

4000

2
2000

0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 25 50 75 100 125 150

Pulse Width (s) TC, Case Temperature [℃ ]

Fig.11 Single Pulse Maximum Power Fig.15 Maximum Drain Current vs. Case
Dissipation Temperature

Jan. 2021. Version 1.5 4 Magnachip Semiconductor Ltd.

 MDF10N60G N-channel MOSFET 600V
Physical Dimensions

3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified

Symbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Jan. 2021. Version 1.5 5 Magnachip Semiconductor Ltd.

 MDF10N60G N-channel MOSFET 600V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip
Semiconductor Ltd.

Jan. 2021. Version 1.5 6 Magnachip Semiconductor Ltd.