Research Article Vol. 40, No.

8 / August 2023 / Journal of the Optical Society of America A 1545

Multifrequency on–off modulation and slow light

characterization of the patterned black
phosphorus metamaterial based on dual
plasmon-induced transparency
Xia Chang, Hongjian Li,* Chao Liu, Zhenbing Zhang, Min Li, Bianxian Ruan,
AND Enduo Gao
School of Physics and Electronics, Central South University, Changsha 410083, China
*lihj398@126.com

Received 21 February 2023; revised 20 June 2023; accepted 4 July 2023; posted 6 July 2023; published 19 July 2023

We present a monolayer patterned black phosphorus (BP) metamaterial for generating a tunable dual plasmon-
induced transparency (PIT). We have derived the expression for the theoretical transmittance by introducing the
coupled mode theory (CMT), and the calculated results of the expression highly overlap with the simulation results.
The quarterly frequency synchronous switch with two different operating bands is designed by the carrier density
and scattering rate on the dual PIT modulation effect. Two parameters were selected as important markers to show
the performance of the optical switch: the modulation depth (MD) and the insertion loss (IL). The theoretical
analysis of this structure shows that the higher modulation depth (5.45 dB < MD < 12.06 dB) and lower inser-
tion loss (0.60 dB < IL < 0.22 dB) of these switches are of good application. In addition, we found the slow light
properties of the structure were excellent with a group index of up to 219. This work provides a theoretical basis to
prepare multifrequency optical switch and optical buffer devices. © 2023 Optica Publishing Group
https://doi.org/10.1364/JOSAA.488335

1. INTRODUCTION
Surface plasmons (SPs) are surface collective electromag-
netic oscillatory waves generated by the resonance interaction
between conduction electrons on the metal surface and photons
in incident light [1,2], which can break through the tradi-
tional diffraction limit and provide a new direction to realize
the manipulation of electromagnetic waves at subwavelength
scales [3]. As a result, various optical phenomena based on
plasmon systems have been studied, such as optical transport
[4], Fano resonance [5], and plasmon-induced transparency
[6] (PIT). PIT is an analogue of electromagnetic-induced
transparency (EIT), which is caused by the strong coupling of
SPs between metal and dielectric layers [7,8]. PIT can alter the
optical response of the system by creating anomalous absorption
peaks or transmission valleys when light passes through the
great narrow spectral regions. This narrow transmission valley
is closely related to the strong dispersion effect, which can pro-
duce a large group refractive index. It has greater prospects for
development in slow light devices [9]. These optical features can
be used to manufacture various devices such as optical switches
[10,11], optical sensors [12], optical absorption units [13], and
optical storage units [14]. Compared to EIT, PIT has simple
experimental materials, low environmental requirements, and
flexible operating bands, and the PIT is attracting more and
more attention [15–17].
In the past, most PIT studies have chosen metal as the experi-
mental material [18] due to the easy availability of materials for
metallic waveguides and their easy fabrication. However, there
are some unavoidable drawbacks, such as the difficulty of chang-
ing the operating band, the spectral response, and the high losses
[19,20], which limited the dielectric constant function. With
the rise of 2D materials, it has been discovered that 2D materials
can excite the SPs and support the propagation of SPs [21,22].
Black phosphorus (BP), an emerging 2D material, possesses
unique advantages that make it stand out from other 2D mate-
rials. Graphene [23] is the most widely applied and explored
2D material [24,25] that has many excellent optoelectronic
properties, such as a high electron mobility, broadband optical
absorption, and long propagation length [23,26]. However,
graphene lacks a direct bandgap, leading to restrictions in semi-
conductor electronics. BP has a direct bandgap that can be
tuned by the number of layers and electric voltage bias [27,28].
For example, the direct bandgap of single-layer BP and bulk
BP is, respectively, 2.0 eV and 0.3 eV. The BP direct bandgap
tunability allows BP to operate in a wide frequency range from
the visible to the mid-IR spectra range [29,30], expanding
the operating range of BP-based metamaterials [31]. BP also

1084-7529/23/081545-07 Journal © 2023 Optica Publishing Group

 1546 Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A Research Article

exhibits excellent electrical properties, which include a high hole (a) (b)
Incident wave P
mobility up to 1350 cm2 V−1 s−1 , a switching ratio up to 105 ,
E(x)
great current saturation in field-effect devices and a high relative l
carrier density n = 2.6 × 1014 cm−2 at low temperatures. w1
In this paper, we introduce a dual-PIT device made of BP H(y) P l l1
material with a periodical structure. Under the excitation of k(z)

x-polarized light, a square BP nanosheet can be used as a bright

mode and two rectangular BP nanosheets can be used as a dark
mode. The bright mode and the dark mode interfere with each
other to produces the dual-PIT curve in transmission spectrum.
The coupled mode theory (CMT) calculations were compared
to the finite-different time-domain (FDTD) simulations at
the same transmission spectrum, and they remained highly
consistent. To investigate the changes brought by different con-
ditions to the PIT phenomenon, we varied the carrier density
and scattering rate of the BP material to observe the changes in
the transmission valley and concluded that the curve of the PIT
shifts to blue as the carrier density increases. Based on the tun-
able properties of the PIT phenomenon of BP metamaterials,
the optical switching devices can be designed. The simulation
results show that the optimization of the optical switching
performance can be achieved by reducing the BP scattering rate.
In addition, the group index was used as an important indicator
of the slow-light performance of the structure, and it was found
that the group index of the structure was as high as approxi-
mately 219, which was superior to other structures [9,32–35].
Due to the simple design of the studied structure, it is simpler in
the production and fabrication process. The present work opens
a new path for the design of optical switches and slow-light
devices.
2. STRUCTURAL DESIGN AND THEORETICAL
ANALYSIS
The structure of the dual-PIT BP, which consists of a series
of patterned planer monolayer BP nanoflakes and a sub-
strate, is schematically shown in Fig. 1(a). The patterned BP
nanoflakes are periodic in the x–y plane and sandwiched in
the substrate. The thickness of the substrate and superstrate
are, respectively 100 nm and 50 nm. A nondispersive medium
with a refractive index of 1.4 was used for the substrate. As
displayed in Fig. 1(b), the BP nanoflake contains a square BP
nanosheet and two rectangular BP nanosheets. A square BP
nanosheet (length × width × thickness) with l × l × d is
noted as Structure 1, which occupies the center of the unit
cell. Two rectangular BP nanosheets with l 1 × w1 × d denote
Structure 2. The ambient temperature is set to room tem-
perature T = 300 K. Figure 1(b) shows the vertical view of
the cell structure. The mesh accuracy of the overlay is fixed at
1x = 1y = 1z = 0.05 µm.
We consider x-polarized light perpendicular to the structure
as the excitation source. From far-IR to THz range, the BP
exhibits metal-like properties. When the incident wave acts
on the BP, SPs can be excited and propagate along the interface
between the BP and the dielectric. The propagation constant
βand effective refractive index n eff can be described by [21]
s matched layer (PML) is used in the z direction. Figure 2(a)
2εr 2
 
β = k0 εr − , (1)
σg η0
Dielectric
Black phosphorus
Dielectric
(c)
ZZ(y)
AC(x)
Fig. 1. (a) 3D structure sketch of BP metamaterial. (b) Vertical view
of unit cell in Fig. 1(a). The detailed parameters are P = 2000 nm, l =
1200 nm, w1 = 300 nm, and l 1 = 200 nm. (c) 3D spatial distribution
of BP.
n eff = β/k0 , (2)
where εr is the relative permittivity of dielectric, η0 and k0 cor-
respond to the intrinsic impedance and the wave vector, and
σg is the complex conductivity. Figure 1(c) shows that BP is
an orthorhombic crystal consisting of puckered layers, where
armchair (AC) and zigzag (ZZ) directions correspond to the x
axis and the y axis. Every P atom is combined with its neigh-
bors via s p 3 hybridization of 3s and 3 p atomic orbitals [36],
which result in the puckered structure of monolayer BP. The
folded nature of the monolayer BP gives each anisotropy in both
the effective mass and optical properties of the BP. Due to the
anisotropy of monolayer BP, the conductivity of monolayer BP
can be obtained as a Drude-like expression [29]
i Dj
σjj = , (3)
π (ω + iη/~)
π e 2n
Dj = , (4)
mj
where j = 1, 2 is defined as the AC and ZZ directions, ω is the
angular frequency of the incident light, η = 1/τ to describe
the scattering rate (η is the carrier relation time, related to finite
damping), and D j is the Drude weight along different direc-
tions, in which e , m j , and n are, respectively, the electron charge,
the effective mass along both directions in the plane, and the
carrier density. Then,
~2 ~2
mx = 2γ1 2
, my = . (5)
+ ηc 2νc
1
Since the charge carriers here represent electrons, for mono-
layer BP[37], γ1 = 4a /π eVm, 1 = 2 eV, ηc = ~2 /(0.4m 0 ),
υc = ~2 /(1.4m 0 ), a = 0.223 nm, and d = 0.85 nm.
The numerical simulation method uses the FDTD method
in this paper. In the calculation, the periodic boundary condi-
tions (PBC) are applied to the x (y ) directions, and a perfectly
shows the transmission spectrum of the individual Structure 1
and Structure 2. Here, the parameters are set as η = 3 meV, and
 Research Article Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A 1547

distribution diagrams of dip2. It can be seen when the light wave

with f dip2 = 12.48 THz is vertically incident on the structure,
the light energy is distributed at the four corners of the bright
mode, which is like the electric field diagram in Fig. 2(c); how-
ever, compared to Fig. 2(c), the localized ability of the electric
field at the four corners is enhanced. When the system is a whole,
both the bright mode and the dark mode can be excited, and
there is a near-field coupling between the bright mode and the
dark mode, which leads to the enhancement of the corner energy
of the rectangular BP. Figure 2(g) is the electric field distribution
diagram of dip3. It can be seen that when the light wave with
frequency f dip3 = 17.52 THz is vertically incident, the energy
of the light is distributed at four intersection points between S1
Fig. 2. (a) Transmission spectrum when linearly polarized light is and S2. a comparison of the electric field distribution diagram
incident vertically along the positive direction of the z axis. The blue shows that there is coupling between the dark mode and the
(green) curve represents the transmission spectrum when distributed second resonance mode, and the blue shift of the second reso-
periodically by Structure 1 (Structure 2). Transmission spectrum, nance mode is caused by the weak coupling strength between
of the system where n = 1.2 × 1014 cm−2 and η = 3 meV. (b)–(c) the dark mode and the second resonance mode. Therefore,
Electric field strength distribution of f 1 and f 2 . (d)–(f ) Electric field the double PIT phenomenon of the structure is caused by the
strength distribution of dip1, dip2, and dip3, respectively. The three coupling of the bright mode and the dark mode.
transmission valleys of the double PIT in the transmission spectrum
The CMT is a mature theoretical research method that can
( f dip1 = 8.96 THz, f dip2 = 12.48 THz, and f dip3 = 17.52 THz) are
represented by dip1, dip2, and dip3.
study the coupling relationship between two or more resonance
modes and has been used in many papers [38–40]. The CMT
is introduced to understand the transmission properties of the
n = 1.2 × 1014 cm−2 . When the x-polarized light is incident proposed structure. As shown in Fig. 3, the three equivalent
vertically along the z axis, Structure 1 can be effectively coupled theoretical coupled modes are named A 1 , A 2 , and A 3 . The
with the incident light and is called the bright mode (blue line). in/out
wave passing through the resonant cavity is expressed as A n±
From the transmission spectrum, it can be seen that Structure (n = 1, 2, 3). The subscripts ± show the propagating direction
1 produces two BP surface plasmons (BPSP) resonance modes of the traveling wave, and superscripts in/out represent “wave
with the first resonance mode at f 1 = 12.17 THz and the enter” or “wave leave” the resonant cavity. Thus, the complex
second resonance mode at f 2 = 15.14 THz. Instead, Structure amplitude a n of the nth resonator can be expressed as
2 cannot be excited directly by the event, and acts as dark
γ1 −iµ12 −iµ13
  
mode (green line). When Structure 1 and Structure 2 become a1
a whole, the dark mode interacts with the bright mode to pro-  −iµ21 γ2 −iµ23   a 2 
duce three significant transmissive valleys. To conveniently −iµ31 −iµ32 γ2 a3
describe the change of PIT, the transmission dips of Fig. 2(b)  1/2   in 
are marked as dip1, dip2, and dip3 respectively, from left to −γo 1 0 0 A 1+ + A in
1−
right. The frequency of transmission dips is f dip1 = 8.96 THz, =  0 −γo1/21 0   A in in 
2+ + A 2− , (6)
f dip2 = 12.48 THz, and f dip3 = 17.52 THz. 0
1/2
0 −γo 1 A 3+ + A in
in
3−
To further explain the process of dual-PIT, we present the
simulated electric field intensity profiles in Figs. 2(b)–2(f ). where µmn (m 6 = n) is the coupling coefficient between
Figures 2(b) and 2(c) describe the electric field distribution of nth and mth, γn = (iω − iωn − γin − γon ), ωn is the
the two resonant frequencies when only S1 exists in the system. resonance angular frequency of nth resonator mode,
Figure 2(b) shows the electric field distribution at the first res- γin = 1/τin = ωn /(2Q in ) is the attenuation rate caused by
onance mode f 1 = 12.17 THz. It can be seen from the figure internal loss, and γon = 1/τon = ωn /(2Q on ) is the attenuation
that the energy is placed at the corner of the rectangular BP. rate of energy escaping from the mode to outer space. Q tn , the
Figure 2(c) shows the electric field distribution in the second total loss quality factor, satisfied 1/Q tn = 1/Q in + 1/Q on ,
resonance mode f 2 = 15.14 THz, from which it can be seen where Q in and Q on are nth mode quality factors associated
that the energy is localized on both sides of the BP nanosheet and with, respectively, the intrinsic loss and the loss of diffusion into
is excited by the plane light of the electric field energy along the x outer space. Q tn and Q on can be expressed as Q tn = f /1 f and
axis. Figures 2(e)–2(g) shows the electric field distribution at the Q on = Re(n eff )/Im(n eff ).
three transmission valleys in the double PIT curve. Figure 2(e) According to the conservation of energy, we get
is the electric field distribution diagram of dip1. When the
light wave with f dip1 = 8.96 THz was vertically incident on the A in out iφ12
2+ = A 1+ e , A in out iφ21
1− = A 2− e , (7)
structure, the energy localized on both sides of the dark mode.
As shown in the figure, due to the coupling between the bright A in out iφ23
, A in out iφ32
, (8)
3+ = A 2+ e 2− = A 3− e
mode and the dark mode, the dark mode is indirectly excited
by the light source through the bright mode, forming a new
1/2 1/2
1+ = A 1+ − γo 1 a 1 , A 1− = A 1− − γo 1 a 1 ,
A out in out in
transmission valley. Figures 2(e) and 2(f ) are the electric field (9)
 1548 Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A Research Article

Fig. 3. The theoretical CMT model for the dual-PIT structure.

1/2 1/2
2+ = A 2+ − γo 2 a 2 , A 2− = A 2− − γo 2 a 2 ,
A out in out in
(10)
Fig. 4. (a)–(e) Transmission spectra of the proposed structures
A out = A in
1/2
− γo 3 a 3 , A out = A in
1/2
− γo 3 a 3 , (11) with different carrier (n) concentrations from n = 0.6 × 1014 cm−2
3+ 3+ 3− 3−
to n = 1.4 × 1014 cm−2 with an interval of 1n = 0.2 × 1014 cm−2 .
where φmn is the phase difference between the nth mode and The red curves are the results of CMT theoretical calculations, and the
the mth mode. Because the proposed BP nanoflake is in the black circles are the results of FDTD simulations. (f ) Function rela-
same plane, φmn = 0. During the theoretical calculation, tionship n and frequency of transmittance dips. (g) 3D plot between
frequency, carrier concentration, and transmittance calculated by
it is assumed that the light is incident from a single direc-
CMT.
tion, A out in
1+ = A 1− = 0. Thus, we can obtain the transmission
coefficient
A out 3. RESULTS AND DISCUSSION
3+ 1/2 1/2 1/2
t= = 1 − γo 1 B − γo 2 C − γo 3 D, (12)
A in The frequency, spectral width, and transmissivity of transmis-
1+
sion dips can be adjusted by the carrier density (n) and scattering
and h rate (η). We can take advantage of this feature of the dual-PIT to
1/2 1/2
B = (γ2 γ3 − γ23 γ32 )γo 1 + (γ12 γ3 + γ13 γ32 )γo 2 realize the fabrication of photoelectric devices. First, we discuss
i. the impact of the carrier density related with voltage bias on the
1/2 light transmission. [29,41,42].
+ (γ12 γ23 + γ13 γ2 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3
The transmission spectrum of BP metamaterial with differ-
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , ent carrier densities [(a) n = 0.6 × 1014 cm−2 (b) n = 0.8 ×
(13) 1014 cm−2 (c) n = 1.0 × 1014 cm−2 (d) n = 1.2 × 1014 cm−2
h (e) n = 1.4 × 1014 cm−2 ] are displayed in Fig. 4. The results of
1/2 1/2
C = (γ3 γ21 + γ23 γ31 )γo 1 + (γ1 γ3 − γ13 γ31 )γo 2 the theoretical calculation of CMT (red line) are approximately
the same as the results of the numerical calculation of the FDTD
1/2
i. method (black circle). As the carrier density n increased, the
+ (γ1 γ23 + γ13 γ21 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3 dual-PIT curve had a blue shift trend and the dip’s transmissiv-
ity decreased. Figure 4(f ) shows the relationship between carrier
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , density n and the frequency of the three transmittance dips. By
(14) observing the slopes of different dips in Fig. 4(f ), it was found
h
1/2 1/2
that dip3 is most sensitive to changes in the carrier density n.
D = (γ21 γ32 + γ2 γ31 )γo 1 + (γ1 γ32 + γ12 γ31 )γo 2 The evolution of the transmission spectra with different carrier
i. n density of BP is presented in Fig. 4(g). The results in Fig. 4(g)
1/2
+ (γ1 γ2 − γ12 γ21 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3 are consistent with those in Fig. 4(f ).
According to the results discussed earlier, the PIT curve of
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , the structure produces a prominent blue shift with an increase
(15) in the carrier density, which generates two optical switches with
different operating frequencies. When the carrier density n of
γ12 = iµ12 + (γo 1 γo 2 )1/2 , γ21 = iµ21 + (γo 1 γo 2 )1/2 , (16) BP is limited to two fixed values of n = 0.6 × 1014 cm−2 and
n = 0.8 × 1014 cm−2 , a dynamically adjustable multiswitch
can be achieved with operating frequencies [ f 1 , f 2 , f 3 , f 4 ] =
γ23 = iµ23 + (γo 2 γo 3 )1/2 , γ32 = iµ32 + (γo 2 γo 3 )1/2 , (17) [6.35, 7.32, 8.86, 10.22] THz, as illustrated in Fig. 5(a). In
the design, we assumed that the transmission peaks corre-
γ13 = iµ13 + (γo 1 γo 3 )1/2 , γ31 = iµ31 + (γo 1 γo 3 )1/2 . (18) spond to the “on” state and the transmission valleys response
to the “off” state. When n = 0.6 × 1014 cm−2 , the proposed
We then can achieve theoretical transmittance values optical-switch realizes the “off” state at f 2 = 7.32 THz and
T = |t|2 . f 4 = 10.22 THz and f 1 = 6.35 THz and f 3 = 8.86 THz;
 Research Article Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A 1549

3 4
Table 1. Comparison of Different Types of Modulators
1 2

Transmission
Year Structure Type MD IL

3
2020 [43] Monolayer graphene Four frequency 77.7% /
1
4 2022 [45] Metallic resonant Single frequency 11 dB /
2
ring
(a) 2016 [46] Hybrid Single frequency 90% Less than
4
graphene/metal 0.5 dB
1
2
3
stacked
Transmission

2020 [44] Multilayer graphene Four frequency 87.8% /

This work Patterned BP Four frequency 12 dB 0.23 dB
3 4

1
2
(b)

Frequency(THz)

Fig. 5. (a) Quarterly frequency synchronous switch when

n = 0.6 × 1014 cm−2 and n = 0.8 × 1014 cm−2 . (b) Quarterly
frequency synchronous switch when n = 0.8 × 1014 cm−2 and
n = 1.2 × 1014 cm−2 .

when n = 0.8 × 1014 cm−2 , “on” and “off” state is com-

pletely in opposition. In addition, two parameters, the
modulation depth (MD) and the insertion loss (IL), will
be used to evaluate the performance of optical open light.
The modulation depth is set as MD = 10 lg (Tmax /Tmin ),
and the insertion loss is set as IL = −10 lg (Tmax ) [43,44].
Here, Tmin is the maximum transmittance in the full modu-
lation cycle, and Tmax is the transmittance corresponding
to another PIT curve at the same frequency. As shown in
Fig. 5(a), the BP material can be manufactured as a quadruple
frequency synchronous switch. By calculation, the MD and
IL corresponding to the four different frequency states are
[MD1 , MD2 , MD3 , MD4 ] = [2.86, 3.93, 2.02, 2.98] and
[IL1 , IL2 , IL3 , IL4 ] = [0.93, 0.81, 0.62, 0.35]. According to
the analysis above, the performance of the optical switch at each
frequency is not satisfactory.
When the carrier density n of BP is limited to two fixed
values of n = 0.8 × 1014 cm−2 and n = 1.2 × 1014 cm−2 ,
four-frequency synchronous switches can be constructed with
operating frequencies [ f 1 , f 2 , f 3 , f 4 ] = [7.32, 8.96, 10.24,
12.49] THz, as shown in Fig. 5(b). When n = 0.8 ×
1014 cm−2 , the “on” state and “off” state correspond to [ f 2 , f 4 ]
= [8.96, 12.49] THz and [ f 1 , f 3 ] = [7.32, 10.22] THz.
When the carrier density is adjusted from n = 0.8 × 1014 cm−2
to n = 1.4 × 1014 cm−2 , the switching state is exactly the
opposite. The MD and IL of these four-frequency synchronous
switches are [MD1 , MD2 , MD3 , MD4 ] = [4.11, 5.78,
2.34, 4.44] and [IL1 , IL2 , IL3 , IL4 ] = [0.63, 0.62,
1.01, 0.23]. Compared to the optical switches mentioned
earlier, these optical switches have improved performance.
However, the performance of these two optical switches is still
poor. Therefore, we will study the effect of the BP scattering rate
on the optical switch device below (see Table 1).
Second, we studied the effect of the scattering rate of BP on
the optical switching performance. Figure 6 show shows the
transmission spectrum of the optical switches at different scat-
tering rates (η): (a) and (d) η = 1 meV, (b) and (e) η = 2 meV,
(c) and (f ) η = 3 meV. Obviously, the modulation frequency of
Fig. 6. (a)–(c) Transmission spectrum of quarterly frequency
synchronous switch changes from η = 3 meV to η = 1 meV, when
n = 0.6 × 1014 cm−2 and n = 0.8 × 1014 cm−2 . (d)–(f ) Transmission
spectrum of quarterly frequency synchronous switch changes
from η = 3 meV to η = 1 meV, when n = 0.8 × 1014 cm−2 and
n = 1.2 × 1014 cm−2 .
the optical switches is insensitive to the change in the material’s
scattering rate. When the scattering rate of BP decreases, there
is no significant shift in the frequency corresponding to the
transmission valley; however, the difference in the transmit-
tance corresponding to the transmission peak and trough is
increasing, which can significantly improve the optical switch
performance.
When the scattering rate of BP is reduced from 3 meV
to 1 meV, the MD and IL of the first optical switch are
[MD1 , MD2 , MD3 , MD4 ] = [7.50, 9.31, 5.6424, 7.0639],
[IL1 , IL2 , IL3 , IL4 ] = [0.60, 0.38, 0.24, 0.18]; the MD and IL
of the second optical switch are [MD1 , MD2 , MD3 , MD4 ] =
[9.26, 12.06, 6.76, 9.2882], [IL1 , IL2 , IL3 , IL4 ] = [0.42,
0.24, 0.52, 0.22]. Compared to several groups of different types
of optical switches, the optical switches obtained in this work
maintain a relatively good level in terms of both modulation and
insertion loss.
In addition, slow light is also one of the important PIT prop-
erties. When a narrow resonance peak appears in the spectrum,
the phase near the resonance peak will produce a sudden change,
enhancing the interaction between light and matter, which
slows down the group velocity. n g as a parameter to demon-
strate the slowing effect of light, and the expression of the group
velocity is
c dθ
ng = , (19)
ls d ω
 1550 Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A
(a) (b)
Group index
Phase shift
n=0.8×1014 cm-2 n=1.0×1014 cm-2
(c) (d)
n=1.2×1014 cm-2 n=1.4×1014 cm-2
Frequency(THz)
Fig. 7. (a)–(d) Curves of the group index and phase change function
of this structure at different carrier densities n; η = 1 meV.
where c is the speed of light in a vacuum, l s = 150 nm is the
thickness of the structural unit, and θ = arg(t) is the phase
of transmission, which drops sharply in the resonance dips.
From Eq. (11), it is clear that the magnitude of n g is positively
correlated with the derivative of θ . When θ changes more
rapidly, the value of n g is larger. We set the scattering rate
of BP to η = 1 meV. As displayed in Figs. 7(a)–7(d), when
n = 1.4 × 1014 cm−2 , the group index reaches a maximum
value of 219.
4. CONCLUSION
In summary, a BP metamaterial that can generate a double
PIT was designed to realize a multifunctional switching and
optical switching device. Comparing the FDTD calculation
results to the CMT calculation results, we found that the two
can be well matched together. The carrier concentration in BP
modulates the double PIT and, using this optical property, two
four-frequency optical switches were proposed. By changing
the scattering rate of the material, the performance of the opti-
cal switches was optimized, giving the two optical switches a
higher modulation depth (5.45 dB < MD < 12.06 dB) and
a lower insertion loss (0.60 dB < IL < 0.22 dB). Both optical
switches have good modulation performance. In addition, the
slow optical performance of the proposed structure is expressed
using the group index, and the maximum group index is 219
when n = 1.4 × 1014 cm−2 , η = 1 meV. This indicates that the
structure has potential for applications in multichannel switches
and optical buffer devices.
Funding. Hunan Provincial Innovation Foundation for Postgraduate
(No. 2022ZZTS0170).
Disclosures. The authors declare no conflicts of interest.
Data availability. Data underlying the results presented in this paper are
not publicly available at this time but may be obtained from the authors upon
reasonable request.
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