24 - SOLIDS AND SEMI-CONDUCTOR DEVICES Page 1

(Answers at the end of all questions}

1) In a common base amplifier, the phase difference between the Input signal voltage and
output voltage is
(a) 11: (b) 'It:/ 4 (c) ｾＯＲ＠ (d) zero [ AIEEE 2005 }

2) In a full wave rectifier, circuit operating from 50 Hz mains frequency,

frequency in the ripple would be
(a) 25 Hz ( b I 50 Hz ( c I 70.7 Hz ( d I 100 Hz 2005}

3) When npn transistor is used as an amplifier

( a ) electrons move from base to collector
( c ) electrons move from collector to base

4) For a transistor amplifier in common emitter ｣ｯｮｦｩｧｵｲ｡ｾＮＬｬ､＠ impedance of 1 M

( ht• =
50 and h.,., =
25 IJA IV ), the current gain i , '!{J
(a} -5.2 (b) -15.7 (c) -24.8 (d) 48.7. { AIEEE 2004 I

5) temperature to 80 K.
The resistance of ｾ＠
(a) each of these increases (b) h o se decreases
(c) copper strip increases and that aniUm decreases
(d) copper strip decreases and o nlum increases [ AIEEE 2004, 2003 I

6I The lids is due to

( a ) Heisenberg's uncertain ( b ) Pauli's exclusion principle
( c ) Bohr's correspondenc ( d ) Boltzmann's law I AIEEE 2004 I

7) When p-n junction

(a I and barrier eight is Increased
(b I widened and barrier height is reduced
(c) both the •nJiriogic•n and barrier height are reduced
(d) both region and barrier height are Increased I AIEEE 2004 I

8I The variation of resistance with temperature in a metal and a

rises essentially due to the difference in
bonding ( b 1 crystal structure
g mechanism with temperature ( d } no. of charge carriers with temp.
I AIEEE 2003 I

middle of the depletion layer of a reverse biased p-n junction, the

the potential is zero ( b ) electric field is zero
potential is maximum ( d ) electric field is maximum 1AlE EE 2003 1

10) In a p-n junction, the depletion layer consists of

( a ) electrons ( b ) protons ( c ) mobile ions ( d 1 immobile ions [ AIEEE 2002 I

11 ) In forward bias, the width of otential barrier in p-n )unction diode

( a 1 increases ( b ) decreases ( c ) remans constant
( d ) first increases, then decreases [ AIEEE 2002 }
 24 - SOLIDS AND SEMI-CONDUCTOR DEVICES Page 2
(Answers at the end of all questions}

12 1 When a potential difference is applied across, the current passing through,

( a 1 an insulator at 0 K is zero
( b 1 a semiconductor at 0 K Is zero
( c 1 a metal at 0 K is finite
( d 1 a p-n diode at 300 K is finite if it is reverse biased 9991

13 1 A transistor is used in common emitter mode as

( a 1 the base emitter junction is forward biased
( b 1 the base emitter junction is reverse biased
( c 1 the Input signal is connected In series with the the base
emitter junction
( d } the input signal is connected in series with
connector junction

14 1 In a p-n junction diode not connected to any

(a I
(bI
(cI side to the p-type

(d I from the p-type side to the n-type

(liT 1998]
15 1 Which of the

I liT 1997 I

16)
(b 1 ionic solids
[liT 1996]

17 the output is shown in the figure. The

(b) A, C I c I B, 0 ( d} A, B, C, 0 [liT 19961

18 1 Read the following statements carefully:

Y : The resistivity of a semiconductor decreases with increase of temperature
Z : In a conducting solid, the rate of collisions between free electrons and ions increases
with increase of temperature
( a 1 Y is true but Z is false ( b 1 Y is false but Z is true
( c 1 Both Y and Z are true ( d 1 Y is true and Z is the correct reason for Y
(liT 1993]
 24 - SOLIDS AND SEMI-CONDUCTOR DEVICES Page 3
(Answers at the end of all questions}

19 1 In an n-p-n transistor circuit, the collector current Is 10 mA. If 90% of the electrons
emitted reach the collector
(a 1 the emitter current wll be 9 mA (b) the emitter current will be 11 mA
( c 1 the base current will be 1 mA (d 1 the base current will be -1 mA

20 } Two Identical p-n

junctions may be
connected in series
with a battery in
three ways as shown

€1
in the figure. The
Circuit 1
potential drops
across the two n-p junctions are equal in +
( a 1 circuit 1 and circuit 2 ( b 1 circuIt 2 and cir i
( c 1 circuIt 3 and circuit 1 ( d 1 circuit 1 on I {liT 1989)

21 1 A piece of copper and another of from room temperature to

so• K. The resistance of
(a 1 each of them increases (b ) ｾ＠ decreases
(c 1 copper increases and germanium rea
(d 1 copper decreases and 1 eas s [liT 1988)

22 ) The impurity atoms with ilicon should be doped to make a p-type

semiconductor are those of
(a 1 phosphorous ( ｢ｾｮ＠ (c 1 antimony ( c I aluminium [Ill 1988)

23 1 Select the correct state r the following:

( a 1 A diode can be a rectifier.
( b 1 A triode cannot as a rectifier.

( d 1 The linear I of the I - V characteristic of a triode is used for amplification

witho t dist · . [ Ill 1984 )

. .ｾｬｩｳｴｮ｣･＠
3
of a triode valve is 3 x 10 ohm and its mutual conductance is
volt. The amplification factor of the triode is
6
(b) 4.5 (c) 0.45 ( d I 2 X 10 1111 1983, 1981 1

Answers