micromachines
Article
Heat Dissipation Characteristics of IGBT Module Based on
Flow-Solid Coupling
Lipeng Tan 1 , Peisheng Liu 1, * , Chenhui She 1 , Pengpeng Xu 1 , Lei Yan 1 and Hui Quan 2






Citation: Tan, L.; Liu, P.; She, C.; Xu,
P.; Yan, L.; Quan, H. Heat Dissipation
Characteristics of IGBT Module
Based on Flow-Solid Coupling.
Micromachines 2022, 13, 554.
https://doi.org/10.3390/
mi13040554
Academic Editor: Kwang-Yong Kim
Received: 30 January 2022
Accepted: 19 March 2022
Published: 31 March 2022
Publisher’s Note: MDPI stays neutral
with regard to jurisdictional claims in
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iations.
Copyright: © 2022 by the authors.
Licensee MDPI, Basel, Switzerland.
This article is an open access article
distributed under the terms and
conditions of the Creative Commons
Attribution (CC BY) license (https://
creativecommons.org/licenses/by/
4.0/).
Micromachines 2022, 13, 554. https://doi.org/10.3390/mi13040554
1 Jiangsu Key Laboratory of ASIC Design, College of Information Science and Technology, Nantong University,
Nantong 226019, China; tanlipengdsg@163.com (L.T.); 1811310001@stmail.ntu.edu.cn (C.S.);
2110320054@stmail.ntu.edu.cn (P.X.); 2110310042@stmail.ntu.edu.cn (L.Y.)
2 College of Science, Nantong University, Nantong 226019, China; 2102310022@stmail.ntu.edu.cn
* Correspondence: psliu@ntu.edu.cn
Abstract: With the increase of power level and integration in electric vehicle controllers, the heat
flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its phys-
ical limit. At present, third-generation semiconductor devices including SiC MOSFETs (Metal-
Oxide-Semiconductor Field-Effect Transistor) are gradually replacing the dominant IGBT module.
The hybrid IGBT module consists of both and can improve the performance and reduce the cost of
controllers. Limits due to the installation space, location, and other conditions in the car make it
difficult to meet the requirements of controllers with an air-cooled heatsink due to their large size and
limited heat dissipation capacity. A smaller and more powerful water-cooled heatsink case is required
to ensure the heat dissipation of the IGBT in the controller. Based on previous experience in finite
element numerical simulation, hydrodynamics calculation, and heat transfer calculation, ANSYS
Workbench finite element software was used to analyze the thermal resistance of each structure inside
the module and the heatsink structure. The fluid characteristics and heat transfer performance of
three different flow channel structures were analyzed, and the design of the cooling flow fin was
improved to provide a reference for the heat dissipation of the hybrid IGBT module.
Keywords: IGBT module; water-cooled heatsink; ANSYS; junction temperature; temperature field;
fluent field
1. Introduction
In modern society, PE (Power Electronics) systems are widely used in industrial
and household applications for controlling and converting electrical energy [1]. In new
energy vehicles, railways, automated manufacturing systems, wind power generation and
other fields, PE systems can save energy and make structures more compact. In the past
few years, power semiconductors including IGBT modules have dominated the power
converter market due to their excellent performance, low cost, reliability, light weight,
and small size [2,3]. One of the most important power conversion devices, IGBTs were
invented in 1982, which accelerated the application of bipolar devices in high voltage and
large current markets [4,5]. As shown in Figure 1, the IGBT is applied to a wide range of
current and voltage levels [6]. In applications except smart grids, the rated current of IGBTs
increases with the increase of rated voltage. For silicon-based IGBTs, this problem can be
solved by using multi-chip power modules. A more advanced solution is to use the third-
generation semiconductors, which can work at higher frequencies than silicon-based IGBTs.
At present, in the application fields requiring medium and high power, the traditional
low-switching frequency silicon IGBTs and the emerging high-cost SiC MOSFETs cannot
simultaneously meet the performance and cost requirements of converters. While SiC-
based IGBTs have great theoretical advantages compared with other high-voltage devices,
poor wafer quality and immature manufacturing technology hinder the commercialization
of SiC-based IGBTs [7]. Therefore, SiC-based IGBT modules are still in the research and
https://www.mdpi.com/journal/micromachines
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Micromachines 2022, 13, 554 2 of 15

commercialization of SiC‐based IGBTs [7]. Therefore, SiC‐based IGBT modules are still in
the research and development stage. Compared with pure silicon IGBT modules, hybrid
IGBT modules have low cost and low technical requirements. In addition, hybrid IGBT
development stage. Compared with pure silicon IGBT modules, hybrid IGBT modules
modules have better heat dissipation performance than pure silicon modules. Therefore,
have low cost and low technical requirements. In addition, hybrid IGBT modules have
hybrid modules are conducive to the transition from silicon IGBT modules to SiC‐based
better heat dissipation performance than pure silicon modules. Therefore, hybrid modules
IGBT modules.
are conducive to the transition from silicon IGBT modules to SiC-based IGBT modules.

104 HVDC
Power

103 Electric
Current Rating/A

Trains

102 Motor
Drives Smart
Grid
Robotics
101
Lamp
Ballast
100
102 103 104 105
Voltage Rating/V

Figure 1.
Figure The wide
1. The wide spectrum
spectrum of
ofIGBT
IGBTapplications.
applications.

Currently, IGBT chips can dissipate no more than 10 kW of power and adopt single
Currently, IGBT chips can dissipate no more than 10 kW of power and adopt single
package parallel operation to obtain the required rated current module. Normally, the heat
package parallel operation to obtain the required −rated current module. Normally, the heat
flux of IGBTs used in HEV is about 100–150 W·cm 2 . With the increase of current capacity
flux of IGBTs used in HEV is about 100–150 W∙cm−2. With the increase of current capacity
and switching frequency, the heat flux will surely exceed 500 W·cm−2 in the future [8]. As to
and switching
junction frequency,
temperature, theIGBT
silicon heat flux willhave
devices surely exceed
a limit 500◦W∙cm
of 150
−2
C for 6 kVin the futurewhereas
voltage, [8]. As to
junction temperature, silicon IGBT devices have a limit of
wide bandgap semiconductors such as SiC and GaN can work at higher temperatures. 150 °C for 6 kV voltage, whereas
wide bandgap semiconductors such as SiC and GaN can work
Considering structural components, welding materials, reliability and cost, the junctionat higher temperatures. Con‐
sidering
temperaturestructural components,
is limited to 175 Cwelding
◦ materials,
by available reliability
packaging and cost,[9,10].
technology the junction temper‐
In medium
ature is limited to
and high-power 175 °C by available
applications, traditional packaging
silicon IGBTstechnology
with low [9,10]. In medium
switching frequencyandandhigh‐
power
new SiC MOSFETs with high cost present performance and cost problems. SiC hybridSiC
applications, traditional silicon IGBTs with low switching frequency and new
MOSFETs
IGBT modules with combine
high costadvantages
present performance and and
on both fronts cost are
problems. SiC hybrid
considered the bestIGBT modules
alternative
combine advantages
to the traditional on both
silicon IGBTs. fronts andfuture,
In the are considered the best alternative
the semiconductor industryto the traditional
expects IGBT
power IGBTs.
silicon output toIn increase
the future, as technology evolves [11].
the semiconductor Similarly,
industry the IGBT
expects higherpower
requirements
output toforin‐
junction temperature mean the heat dissipation technology continues
crease as technology evolves [11]. Similarly, the higher requirements for junction tempera‐ to improve to catch
up with
ture mean the development
the heat dissipation of thetechnology
IGBT [12,13]. continues to improve to catch up with the devel‐
To solve the junction
opment of the IGBT [12,13]. temperature limitation, the thermal management of the chip,
packaging,
To solve and
themodule
junction assembly
temperature have been greatlythe
limitation, improved
thermal in the past twoofdecades.
management the chip,
Amir Sajjad Bahman et al. [14] proposed the concept of
packaging, and module assembly have been greatly improved in the past two decades. a high-energy-density module
cooling system, expounded the conceptual knowledge, and improved methods of IGBT
Amir Sajjad Bahman et al. [14] proposed the concept of a high‐energy‐density module cool‐
cooling system, and also noted the advantages and disadvantages of different cooling
ing system, expounded the conceptual knowledge, and improved methods of IGBT cooling
schemes. Salem et al. [15] used the method of actual data comparison and analysis to
system, and also noted the advantages and disadvantages of different cooling schemes. Sa‐
verify the heat dissipation results of the needle-column cooling structure and another
lem et al. [15] used the method of actual data comparison and analysis to verify the heat
microstructure under different working conditions, and verified that the former structure
dissipation
has the best results of the needle‐column
performance. Zhao et al. [16] cooling structure
innovated and another
a unique coolingmicrostructure
medium inflow under
different working
channel, using the conditions, and verified
best inflow position that the
to achieve the former
best heat structure has effect,
dissipation the best
andperfor‐
the
mance. Zhao et al. [16] innovated a unique cooling medium inflow
heat was thus taken away more evenly. Of course, in the follow-up, the position structure channel, using the best
inflow
of someposition
spoiler to achieve
needles and thethebest heat dissipation
production methodseffect,
of theand the heat
heatsink have was thus
been taken away
explored in
more
detail.evenly. Of course,
Traditional air-cooledin the follow‐up,
heatsinks cannotthe meet
position structure
the heat of some
dissipation spoilerand
demand, needles
water-and
the production
cooled heatsinksmethods
are widely of the
used heatsink haveexcellent
due to their been explored in detail. performance
heat dissipation Traditional air‐cooled
[17,18].
heatsinks cannot
However, meet
there arethefewheat dissipation
studies demand,
on the heat and water‐cooled
dissipation and design of heatsinks are widely
the water-cooled
structure of high-voltage power amplifier IGBT
used due to their excellent heat dissipation performance [17,18]. modules, let alone hybrid IGBT modules
with SiC chips. In this paper, the newly designed high-voltage power amplifier water-
cooled heat dissipation structure based on finite element numerical simulation, the fluid
 However, there are few studies on the heat dissipation and design of the water‐
cooled structure of high‐voltage power amplifier IGBT modules, let alone hybrid IGBT
modules with SiC chips. In this paper, the newly designed high‐voltage power amplifier
water‐cooled heat dissipation structure based on finite element numerical simulation, the
Micromachines 2022, 13, 554
fluid characteristics, and heat transfer performance of hybrid IGBT modules 3are of 15
studied
through the functions of ANSYS Workbench hydrodynamic calculation, heat transfer cal‐
culation, and graph calculation results to provide a reference for the subsequent structural
characteristics, and heat transfer performance of hybrid IGBT modules are studied through
optimization of the heatsink.
the functions of ANSYS Workbench hydrodynamic calculation, heat transfer calculation,
and graph calculation results to provide a reference for the subsequent structural optimiza-
2. Heat
tion ofTransfer Calculation of IGBTs
the heatsink.
2.1. Calculation of Thermal Loss
2. Heat Transfer Calculation of IGBTs
Thermal
2.1. management
Calculation and cooling solutions are an issue of increasing concern for
of Thermal Loss
IGBT modules because of their
Thermal management increasing
and cooling heatare
solutions loss
an in a wide
issue range of
of increasing applications
concern for IGBT[19,20].
These losses can be further divided into two categories, namely conduction
modules because of their increasing heat loss in a wide range of applications [19,20]. These loss and
switching
losses can loss. For thedivided
be further IGBT into
module, the thermal
two categories, loss conduction
namely of the IGBT chips
loss and FWD (free‐
and switching
loss. For the IGBT module, the thermal loss of the IGBT chips and FWD
wheeling diode) chips are mainly considered. The composition of the thermal loss is (free-wheeling
diode)
shown in chips
Figure are2 mainly considered.
[21]. The loss of theThe composition
chip is as follows:of the thermal loss is shown in
Figure 2 [21]. The loss of the chip is as follows:

Figure
Figure 2. Compositionof
2. Composition of IGBT
IGBT module
moduleloss.
loss.
The thermal loss of the IGBT chips is:
The thermal loss of the IGBT chips is:
PIGBT = Psw,I + Pc,I (1)
PIGBT  Psw,I +Pc,I (1)
where Psw,I and Pc,I represent the switching power loss and the conduction power
Psw,I and Pc,I represent the switching power loss and the conduction power loss,
loss, respectively.
where
The switching power loss can be expressed as:
respectively.
The switching power loss can1 be expressed as:I Vdc
P = f (E + E )
sw,I sw on off (2)
π Inom Vnom
1 I Vdc
Psw,I  Vnom
where f sw is the switching frequency; on rated
f sw (isEthe Eoff voltage;
) Inom is the rated current; (2)

Eon and Eoff are the lost energy during turn-on and turn-off I nomofVthe
nomIGBT under Inom and
Vnom . Vdc is the DC bus voltage.
where Thefswconduction
is the switching frequency;
loss of the IGBTs can beVnom rated voltage; Inom is the rated cur‐
is theas:
expressed

rent; Eon and Eoff are the lost energy

1 V CE0 I rI 2 during turn‐on
 
V I andrIturn‐off
2 of the IGBT under
Pc,I = + + M cos ϕ CE0 + (3)
Inom and Vnom . Vdc is the2 DCπbus voltage.
4 8 3π

The Vconduction
where CE0 and r areloss
derived from
of the the linearization
IGBTs of the output
can be expressed as: properties of the IGBTs:

1 VVCECE0  rI sin(ωt)  VCE0 I rI 2 

CE02 +
(t)I= VrI (4)
Pc,I   +  +M cos   M is the+  (3)
2  of
where ω is the angular frequency  the output
4  current wave, 8  
3modulation index,
and ϕ is the phase difference between the current and voltage waves.
VCE andtherthermal
where Similarly,
0
loss of SiC
are derived SBDthe
from in the power module
linearization of can
thebeoutput
expressed as:
properties of the
IGBTs: PDiode = Psw,D + Pc,D (5)

where Psw,D and Pc,D represent theV switching

CE t 
=VCE0 +rI sin
power  
t the conduction power loss, (4)
loss and
respectively. Since the turn-on power loss is negligible, the switching power loss can be
 isas:the angular frequency of1 the output
expressed
where current wave, M is the modulation
I Vdc
index, and  is the phase difference
P sw,D =
π
f E
sw rr the current and voltage waves. (6)
between Inom Vnom
 Micromachines 2022, 13, 554
Micromachines 2022, 13, x
4 of 15
where Err is the reverse recovery energy loss of the diode at the rated current and the rated
voltage. The conduction loss of the diodes can be expressed as:
V 0 CE0 I r0 I 2 V 0 CE0 I r0 I 2
   
1
Pc,D = + − M cos ϕ + (7)
2 π 4 8 3π
where V 0 CE0 and r 0 are derived from the linearization of the output properties of the diodes:
V 0 CE(t) = V 0 CE0 + r 0 I sin(ωt) (8)
2.2. Thermal Resistance Model
The thermal resistance between the chip and the heatsink is actually equal to the sum
of the thermal resistance of each layer in series in the heat dissipation path diagram. The
thermal resistance and heat capacity of each layer are expressed by the following equation:
L
Rth = (9)
kA
Cth = cρAL (10)
where Rth is the thermal resistance of each layer, L is the thickness of each layer, k is the
thermal conductivity, A is the heat dissipation area of each layer, Cth is the heat capacity
of the material, c is the specific heat capacity of the material, and ρ is the density of
the material.
The thermal diffusion angles from top to bottom layers are not exactly the same, and
the thermal diffusion structure of each layer is shown in Figure 3. Due to the different
thermal diffusion angle, the heat transfer area is different. In order to accurately calculate
the effective heat transfer area of each layer structure, it is necessary to obtain the thermal
diffusion angle of each layer through equations as follows:
L
λ= (11)
S

5.86 ln λ + 40.4, λ ≤ 1
f (θ ) = (12)
46.45 − 6.048 · λ−0.969 , λ ≥ 1
where S is the effective contact area of adjacent two layers, L is the thickness of each layer,
and θ is the thermal diffusion angle, so the heat transfer area can be expressed by the
following equation:
A = (a+2 · L · tan θ ) · (b+2 · L · tan θ ) (13)
Rth and Cth affect the steady and dynamic performances of the junction temperature,
respectively. When the transient power consumption lasts for more than 0.5 s, it can be 5 of
considered that the impedance is stable; that is, the temperature difference between the
junctions is stable. At this time, the heat capacity of the IGBT can be ignored [22].
Figure 3. Heat dissipation area on single layer dielectric of IGBT modules.
Figure 3. Heat dissipation area on single layer dielectric of IGBT modules.
According to the heat resistance principle, the entire heat dissipation process is simpli-
fied into aSthermal
where is themodel
effective contact
network basedarea
on aofphysical
adjacent twoas
model, layers, L Figure
shown in is the4thickness
[23,24]. of ea
layer, and  is the thermal diffusion angle, so the heat transfer area can be expressed
the following equation:
A=  a+2  L  tan    b+2  L  tan  (

Micromachines 2022, 13, 554
sidered that the impedance is stable; that is, the temperature difference be
tions is stable. At this time, the heat capacity of the IGBT can be ignored [22
According to the heat resistance principle, the entire heat dissipation
plified into a thermal model network based on a physical model, 5 of 15 as sho
[23,24].

Pv Rth(j-c) Rth(c-a)

Tj Tc Ta
Figure 4. IGBT equivalent computing network for the thermal resistance model.
Figure 4. IGBT equivalent computing network for the thermal resistance model.
According to Figure 4, the coolant temperature and IGBT thermal loss can be calculated
for the IGBT and FWD diode, respectively:
According to Figure 4, the coolant temperature and IGBT thermal los
lated for the IGBT and FWD
Ta + Pdiode, respectively:
 
Tj,I = v Rth(j−c),I + Rth(c−a),I (14)

Tj,D = Ta + Pv T

j,I(j=
Rth −c),D
Ta ++P
Rvth(cR
−ath
),D

 ,I
j-c
 Rth  c-a ,I  (15)

= T +P  R  
where Tj,I is the junction temperature of IGBT chips, Tj,D is the junction temperature of
FWD chips, Ta is the temperature of cooling Tj,D water,
a v th j-c
 Rth  c-afrom
Tc is the temperature
,Dand
cooling
,Dwhen the
water to cooling plate housing. It can be seen from Equations (14) (15) that
Micromachines 2022, 13, x loss is constant, the junction temperature of the chip is affected by the thickness, material, 6 o
where and
porosity, T j,Iother
is factors
the junction temperature
of each layer. Therefore, theof IGBTofchips,
influence various T
factors is
j,D
on the
heat junctio
dissipation is explored from the internal module and heatsink, respectively. This paper
of FWDthechips,
discusses influenceTaof various
is the temperature of cooling
factors on heat dissipation the insideTof
fromwater, c the is module
the tempera
3. Modeling
and the heatsink.and Solutions of IGBT Modules
ing water to cooling plate housing. It can be seen from Equations (14) and
3.1. IGBT Module Package Structure
the
3. loss isand
Modeling constant,
Solutionsthe junction
of IGBT Modulestemperature of the chip is affected by the
Based
3.1. IGBT on different
Module packaging processes, IGBT modules are mainly divided into t
Package Structure
terial, porosity, and
categories:
other factors of each layer. Therefore, the influence of
Based onwelded
differentIGBTs and processes,
packaging press‐pack IGBTs.
IGBT The are
modules welded IGBT
mainly modules
divided are analy
into two
on
withheat
the dissipation
categories: structure
welded IGBTs
is explored
shown
and in Figure 5.
press-pack
from the internal module and heatsink, res
IGBTs. The welded IGBT modules are analyzed
paper
with the discusses theininfluence
structure shown Figure 5. of various factors on heat dissipation from t
module and the heatsink.

Figure 5. Welded IGBT package structure diagram.

Figure 5. Welded IGBT package structure diagram.
From top to bottom, IGBT modules can be divided into the chip, chip solder layer,
From bonded
DBC (direct top to bottom,
copper) IGBT
upper modules can be
copper layer, divided
ceramic intoDBC
layer, the lower
chip, chip solder lay
copper
layer), DBC lower solder layer, substrate, and heatsink [25,26]. This research
DBC (direct bonded copper) upper copper layer, ceramic layer, DBC lower copper used a lay
3300 V/1500 high-voltage module with multilayer packaging method, in which the power
DBC lower solder layer, substrate, and heatsink [25,26]. This research used a 3300 V/1
part was integrated on the substrate through packaging technology. The power module
high‐voltage module with multilayer packaging method, in which the power part w
consisted of six modules in parallel, each containing four Si IGBT chips (13.5 × 13.5 mm)
integrated on the substrate through packaging technology. The power module consis
of six modules in parallel, each containing four Si IGBT chips (13.5 × 13.5 mm) and f
SiC SBD chips (6.5 × 6.5 mm). Especially for FWD, the SiC SBD (Schottky Barrier Dio
chips replace the traditional Si FRD (fast recovery diode). Every two modules constitu
 integrated on the substrate through packaging technology. The power mod
of six modules in parallel, each containing four Si IGBT chips (13.5 × 13.5
SiC SBD chips (6.5 × 6.5 mm). Especially for FWD, the SiC SBD (Schottky B
Micromachines 2022, 13, 554
chips replace the traditional Si FRD (fast recovery diode). Every two 6 of 15
modul
a subsystem, and the rated current of each subsystem was 500 A. A hybrid
can withstand higher working temperature and greater power shock; som
and four SiCpackaging
electronic × 6.5 mm). Especially
SBD chips (6.5connection methods for FWD,
suchthe asSiC SBDsolder
lead (Schottky
andBarrier
lead‐free
Diode) chips replace the traditional Si FRD (fast recovery diode). Every two modules
meet the needs
constituted a subsystem, and the rated currentapplications.
of high‐temperature of each subsystem Duewasto500
theA. high melting p
A hybrid
silver solder,
IGBT module itwithstand
can will nothigher
melt working
duringtemperature
the second andwelding. Therefore,
greater power shock; some for resea
traditional electronic packaging connection methods such as lead
in this paper, nano‐silver solder paste was used as chip solder and 96.5solder and lead-free
solder cannot meet the needs of high-temperature applications. Due to the high melting
(SAC305) was used
point of nano-silver as DBC
solder, it will solder.
not melt The substrate
during the secondand heatsink
welding. wereforconnect
Therefore,
conductive silicone.
research described in thisThe cross‐sectional
paper, views
nano-silver solder paste of
wasthe model
used as chipand theand
solder water‐co
96.5Sn3.0Ag0.5Cu (SAC305) was used as DBC solder. The substrate and heatsink were
are shown in Figures 6 and 7.
connected by thermal conductive silicone. The cross-sectional views of the model and the
water-cooled structure are shown in Figures 6 and 7.

Micromachines 2022, 13, x

Figure 6.6.Simulation
Figure Simulationmodel diagramdiagram
model of the IGBT
ofmodule.
the IGBT module.

Figure 7. Structure diagram of the water-cooled heatsink.

Figure 7. Structure diagram of the water‐cooled heatsink.
The geometric model is simplified by considering the complexity of simulation com-
putation. The bonding lines have little effect on the temperature distribution of the power
The geometric model is simplified by considering the complexity of s
module and they can be ignored when establishing the finite element model. IGBT chips
putation.
and SBD chipsThe
are bonding lines
the heat source have
of the little
whole effect
module, andonthethe
heattemperature distributio
is transmitted down
through the solder layer. When dividing the grid, the chip
module and they can be ignored when establishing the finite elementlayers and solder layers are mod
fine grids, and standard dimensions are adopted for other parts. The coolant selected was
and SBD
water, with anchips are the heat
inlet temperature source
of 25 ◦ C, andof the whole
thermal module,
conductivity and
of 0.648 W·mthe
−1 ·heat
K−1 . is tra
through the solder layer. When dividing the grid, the chip layers and so
fine grids, and standard dimensions are adopted for other parts. The coola
water, with an inlet temperature of 25 °C, and thermal conductivity of 0
The density is 988.1 Kg∙m−3, the specific heat is 4.174 J∙Kg−1∙K−1. IGBT chip
Micromachines 2022, 13, 554 7 of 15

The density is 988.1 Kg·m−3 , the specific heat is 4.174 J·Kg−1 ·K−1 . IGBT chip material is Si,
SBD chip material is SiC, the substrate material is AlSiC, heatsink material is aluminum
alloy, and the specific properties of each part are shown in Table 1.

Table 1. Material parameters for each component in the IGBT package.

Specific Heat Thermal

Density
- Materials Capacity Conductivity
(Kg·m−3 )
(J·Kg−1 ·K−1 ) (W·m−1 ·K−1 )
IGBT Si 700 144 2330
SBD SiC 800 370 3200
Upper solder
Nano Silver 234 240 8580
layer
Cu 390 390 8960
DBC Al2 O3 880 25 3800
Cu 390 390 8960
Lower solder
SAC305 150 32.7 7500
layer
Substrate AlSiC 760 200 2960

3.2. IGBT Module Boundary Conditions

Temperature field boundary conditions: In simulation calculations, the chips are used
as heat sources, and the power losses are directly loaded on the power module to simulate
the heat of the chips. When the device is in a long-term state, the total power losses of the
module will be composed of the loss of the IGBT chips and the SBD chips. After calculation,
the loss of an IGBT chip is 115 W, and the loss of an SBD chip is 20 W. According to the
actual work situation, the ambient temperature is 25 ◦ C, and the convective heat transfer
coefficient between the surface of the heatsink and the air is 5 W·(m2 ·◦ C)−1 .
Flow field boundary conditions: Assuming that the cooling water in the heatsink is
continuous incompressible water, its nature is constant; the flow velocity of the cooling
water and the pipeline contact boundary is zero. The outlet boundary conditions are
designated as fully developed flow, and the inlet temperature is set to 25 ◦ C, the water flow
speed is set to 16 L·min−1 , and the maximum number of iteration steps is set to 300 steps.

4. Analysis of Simulation Results

After the coupling calculation, the finite element analysis software can obtain the dis-
tribution of temperature fields of the IGBT module. The final results are shown in Figure 8.
It can be seen from Figure 8a that as the heat source of the IGBT heat dissipation
module, the chips have the highest temperature. The heat emitted by the chip diffuses
downward from the bottom of the chip, and the heat dissipation and diffusion area after
each layer increase continuously. In addition, the size of SBD chips is smaller than that
of IGBT chips, so SBD chips withstand more heat flux than IGBT chips, resulting in
them having a higher temperature than IGBT chips; the highest temperature reached
85.275 ◦ C. Figure 8b shows the temperature distribution of the heatsink. It can be seen
from the figure that the high temperature of the heatsink is concentrated in the central
area of the upper surface, and the maximum temperature is 63.675 ◦ C. The temperature
spreads rapidly around, and the temperature difference is obvious. Figure 8c shows the
temperature distribution of the water-cooled channel. It can be seen from the figure that
the flow temperature increases gradually with the flow and the temperature at the outlet
decreases gradually. The flow temperature below the heat source reaches the highest level
of 57.203 ◦ C, and the temperature at the outlet is 35.584 ◦ C.
 nated as fully developed flow, and the inlet temperature is set to 25 °C, the water flow speed
is set to 16 L∙min−1, and the maximum number of iteration steps is set to 300 steps.

4. Analysis of Simulation Results

After the coupling calculation, the finite element analysis software can obtain the dis‐
Micromachines 2022, 13, 554 8 of 15
tribution of temperature fields of the IGBT module. The final results are shown in Figure 8.

(a)

(b)

(c)
Figure 8. Simulation
Figure 8.results (a) Overallresults
Simulation temperature distribution
(a) Overall of the IGBTdistribution
temperature module, (b) Heatsink
of the IGBT module,
temperature
(b)distribution of the IGBT distribution
Heatsink temperature module, (c) Temperature
of the IGBTdistribution
module, (c)ofTemperature
IGBT water‐cooled
distribution of IGBT
channel.
water-cooled channel.

5. Factors Influencing the Heat Dissipation

5.1. Analysis of Internal Structure
The material and thickness of each layer in the IGBT module can affect the temperature
distribution. The thermal resistance of the IGBT shell is the sum of the junction temperature
of each layer in series during the heat dissipation of the IGBT module. Therefore, the
influence of the thermal resistance of each layer in the IGBT module on temperature
distribution has been studied in detail. The SBD chip is the highest point of the temperature
distribution of the whole IGBT module. The vertical direction of the center of the upper
surface of the SBD chip is taken as the profile, and the lower surface of the heatsink is
taken as the ordinate. From bottom to top, they are heatsink, thermal conductive silicone,
substrate, DBC solder layer, DBC lower copper layer, DBC ceramic layer, DBC upper copper

Micromachines 2022, 13, 554
ture distribution. The thermal resistance of the IGBT shell is the sum of the junction tem‐
perature of each layer in series during the heat dissipation of the IGBT module. Therefore,
the influence of the thermal resistance of each layer in the IGBT module on temperature
distribution has been studied in detail. The SBD chip is the highest point of the tempera‐
ture distribution of the whole IGBT module. The vertical direction of the center of the
upper surface of the SBD chip is taken as the profile, and the lower surface of the heatsink 9 of 15
is taken as the ordinate. From bottom to top, they are heatsink, thermal conductive sili‐
cone, substrate, DBC solder layer, DBC lower copper layer, DBC ceramic layer, DBC up‐
per copper layer, chip solder layer, and chip. Figure 9 shows the temperature distribution
layer, chip solder layer, and chip. Figure 9 shows the temperature distribution of the IGBT
of the IGBT module along the longitudinal axis.
module along the longitudinal axis.

Temperaturedistribution
Figure9.9.Temperature
Figure distribution along
along thethe longitudinal
longitudinal direction
direction ofprofile.
of the the profile.

ItItcan
canbebe found
found from from the above
the above figurefigure that
that the the temperature
temperature and thickness
and thickness in the samein the
same layer almost show a linear relationship, which is closely related
layer almost show a linear relationship, which is closely related to the thermal conductivity to the thermal
conductivity of each layer of materials. The temperature change of materials
of each layer of materials. The temperature change of materials with small thermal conduc‐ with small
thermal
tivity conductivity
is relatively is relatively
large. Due to the uselarge. Due
of liquid to thethe
cooling, use of liquid
substrate cooling, the
temperature substrate
changes
only 4.32 °C after
temperature 3 mm, reaching
changes only 4.3249.2◦ C°C under
after the heatsink.
3 mm, reachingThe49.2 ◦ C obvious
most under thetemperature
heatsink. The
change is in the DBC
most obvious ceramic layer;
temperature changeonlyisthe
in 0.38
the mm
DBCthick ceramic
ceramic layeronly
layer; has athe
temperature
0.38 mm thick
change
ceramicaslayerhigh as
has14a°C, which is because
temperature change of as
thehigh as 14 ◦ C,
low thermal conductivity of the ceramic
which is because of the low
thermal conductivity of the ceramic layer. In addition to using water-cooled heatsinks
instead of air-cooled heatsinks, materials with higher thermal conductivity can also be
selected to increase the heat transfer capacity. The thermal conductivity is manifested in
the slope of temperature change in the figure. For example, for this paper, nano-silver
solder (thermal conductivity of 240 W·m−1 ·K−1 ) was selected as the chip solder layer to
replace the traditional SAC305 (thermal conductivity of 32.7 W·m−1 ·K−1 ). In addition,
for the DBC ceramic layer, AlN (thermal conductivity of 319 W·m−1 ·K−1 ) was also be
used to replace the original Al2 O3 (thermal conductivity of 25 W·m−1 ·K−1 ). The cost of
high-thermal-conductivity materials is relatively high, and the industry needs to balance
cost and performance according to actual needs.
Considering the significant influence of the DBC ceramic layer on IGBT module
temperature, the influence of changing the thickness of AlN and Al2 O3 on-chip junction
temperature is discussed. The results are shown in Figure 10. Obviously, with the increase of
thickness, the chip temperature decreases with the increase of AlN ceramic layer thickness
and increases with the increase of Al2 O3 ceramic layer thickness. The influence of the two
materials on the chip junction temperature is exactly the opposite. This is due to the high
thermal conductivity of AlN and the low thermal conductivity of Al2 O3 . It can also be
seen from the diagram that with the decrease of the thickness of the DBC ceramic layer, the
temperature gap between the two materials is gradually reduced. Therefore, Al2 O3 can be
used to save costs within the allowable range of process conditions. Especially for high-
power modules with large heat dissipation requirements, if AlN is used as the DBC ceramic
layer material, the thickness should be increased as much as possible under the condition
of allowable cost. If Al2 O3 is used as the DBC ceramic layer material, the thickness should
be reduced as much as possible under the condition of allowable mechanical strength. In
addition, the choice of materials should not only rely on thermal conductivity but also
consider the impact of various materials on the module.

Micromachines 2022, 13, 554
used to save costs within the allowable range of process conditions. Especially for high‐
power modules with large heat dissipation requirements, if AlN is used as the DBC ce‐
ramic layer material, the thickness should be increased as much as possible under the
condition of allowable cost. If Al2O3 is used as the DBC ceramic layer material, the thick‐
ness should be reduced as much as possible under the condition of allowable mechanical
strength. In addition, the choice of materials should not only rely on thermal conductivity 10 of 15
but also consider the impact of various materials on the module.

95 Al2O3
90 AlN

Temperature/℃
85
80
75
70
65
60
55
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Thickness of ceramic layer/mm
Figure
Figure 10. 10. Temperature
Temperature distribution
distribution of IGBT
of IGBT module
module with
with the the thickness
thickness of ceramic
of ceramic layer. layer.

5.2.5.2. Analysis
Analysis of Heatsink
of Heatsink PipePipe Structure
Structure
The The different
different flow flow channel
channel structures
structures of theofheatsink
the heatsink will directly
will directly affect
affect the flowthe flow state
state
of the fluid in the flow channel and then affect the heat dissipation
of the fluid in the flow channel and then affect the heat dissipation effect of the heatsink. effect of the heatsink.
Therefore,
Therefore, optimizing
optimizing thethe design
design of the
of the pipeline
pipeline structure
structure can can improve
improve the heat
the heat dissipation
dissipa‐
efficiency.
tion efficiency. When
Whenthe thecross-sectional
cross‐sectional area of the the flow
flowchannel
channelisisconstant,
constant, the
the circular tube
circular
Micromachines 2022, 13, x is designed
tube is designed asasa arectangular
rectangularstructure.
structure. ItIt can
canbe beseen
seenfrom
from the
the simulation
simulation results
results 16 that the
11 ofthat
thedifference
differencebetween
betweenthe themaximum
maximumjunction junctiontemperature
temperatureof ofthe
theIGBT
IGBTmodule
module and and the
the circular
circular structure
structure is not is not obvious.
obvious. Therefore,
Therefore, to facilitate
to facilitate the modeling
the modeling and use andofuse of rectan‐ cooling
rectangular
gular coolingthe
channels, channels,
structure theofstructure
rectangularof rectangular
pipes is pipes is optimized,
optimized, and the and the cross‐sec‐
cross-sectional area of the
the heatsink. Based on the rectangular heat dissipation channel, the optimization design
tional area of
channels is the channelswhich
increased, is increased,
indirectlywhich indirectly
increases the increases the
utilization rate utilization
of the rate of Based
heatsink.
is carried out. One step is to change the channel section from rectangular to a concave‐
on the
convex rectangular
structure, and the heat dissipation
other is to addchannel, the optimization
heat dissipation design isFigure
fins in the channel. carried 11aout. One
stepthe
shows is to change
section theinitial
of the channel section from
rectangular rectangular
channel; Figure 11b to shows
a concave-convex
the cross‐section structure,
of and
thethe other is to add
concave–convex heat dissipation
structure flow channel. fins
Toin the channel.
ensure the constantFigure 11a shows
cross‐section thethe
area, section of
the of
width initial rectangular
the structure channel;
is larger than Figure 11binitial
that of the showsstructure.
the cross-section
Figure 11cofshows
the concave–convex
the top
viewstructure flow channel.
of the heatsink To ensure
with spoiler fins. the
Afterconstant
the design cross-section
is completed,area,thethefluid–solid
width of the cou‐structure
is larger
pling than that
temperature of the initial
is analyzed based structure. Figure
on different flow11cchannel
shows structures,
the top view andofother
the heatsink
con‐ with
spoiler
ditions arefins.
keptAfter
unchangedthe design is completed,
to explore the maximum the fluid–solid coupling temperature
junction temperature of IGBT mod‐ is analyzed
ulesbased
at different flow rates.
on different flow channel structures, and other conditions are kept unchanged to
explore the maximum junction temperature of IGBT modules at different flow rates.

(a) (b)

(c)
Figure 11. Three
Figure different
11. Three flow channel
different flow structures of the heatsink:
channel structures (a) Rectangular
of the structure,
heatsink: (a) (b)
Rectangular structure,
Concave–convex structure, (c) Fin structure.
(b) Concave–convex structure, (c) Fin structure.

The relationships between the water flow rate and the junction temperatures are
shown in Figures 12 and 13. It can be seen that the junction temperatures of IGBT chips
and SBD chips decrease with the increase of cooling water flow. Compared with before
optimization, the junction temperature of the optimized heat dissipation channel is sig‐
Micromachines 2022, 13, 554 11 of 15

The relationships between the water flow rate and the junction temperatures are shown
in Figures 12 and 13. It can be seen that the junction temperatures of IGBT chips and SBD
chips decrease with the increase of cooling water flow. Compared with before optimization,
the junction temperature of the optimized heat dissipation channel is significantly lower.
The junction temperature difference between models a and b is smaller, and the temperature
curves are closer, and with the increase of flow, the temperature curves of concave-convex
Micromachines
structure and fin structure are close to coincidence. When the flow rate is the same, the
Micromachines2022,
2022,13,
13,xx 12
12 of
of 16
16
junction temperature of the IGBTs with rectangular flow channel is the highest, while that
of the IGBTs with fin flow channel is the lowest.

87.5
87.5 rectangular
rectangular
87.0
87.0 concave-convex
concave-convex
Temperature/℃
Junction Temperature/℃

fin
fin
86.5
86.5
86.0
86.0
85.5
85.5
85.0
85.0
Junction

84.5
84.5
84.0
84.0
83.5
83.5
66 88 10
10 12
12 14
14 16
16 18
18 20
20
water
waterflow rate/Lꞏmin-1-1
flow rate/Lꞏmin
Figure
Figure12.
Figure 12.Relations
12. Relationsbetween
Relationsbetweenwater
betweenwaterflow
waterflow rate
flowrateand the
andand
rate junction
thethe
junctiontemperatures
temperatures
junction of
ofIGBT
temperatures IGBT chips.
chips.chips.
of IGBT

90.0
90.0
rectangular
rectangular
89.5
89.5 concave-convex
concave-convex
Temperature/℃
Junction Temperature/℃

89.0
89.0 fin
fin
88.5
88.5
88.0
88.0
87.5
87.5
Junction

87.0
87.0
86.5
86.5
86.0
86.0
66 88 10
10 12
12 14
14 16
16 18
18 20
20
water
waterflow rate/Lꞏmin-1-1
flow rate/Lꞏmin
Figure
Figure13.
Figure 13.Relations
13. Relationsbetween
Relationsbetweenwater
betweenwaterflow
water rate
flow
flow and
rate
rate the
andand junction
thethe temperatures
junction
junction of
ofSBD
temperatures
temperatures of chips.
SBD SBD
chips.chips.

Therelationships
The
The relationships
relationships between
between
between waterwater
water flowflow
flow rate ratepressure
rateand
and and pressure
pressure are
areshown are in
shown shown
inFigure
Figure in14.
Figure
14. can14. It
ItItcan
be
canseen
be from
seen the
from figure
the that
figure as the
that water
as theflow
waterrate increases,
flow rate the pressure
increases,
be seen from the figure that as the water flow rate increases, the pressure loss of each model theloss of
pressure each model
loss of each
shows
model an
shows an exponentially
shows increasing
an exponentially
exponentially increasing relationship.
increasing
relationship. When
relationship.the
When the When coolant
coolantthe flow rate
coolant
flow exceeds
flow rate
rate exceeds a cer‐
a cer‐exceeds
tain
tain value,
a certain the
the pressure
value,value, loss
loss will
the pressure
pressure rise
loss
will will
rise sharply. Compared
rise sharply.
sharply. Compared with
with rectangular
Compared structure,
with rectangular
rectangular the
structure,structure,
the
pressure
pressure loss
the pressurelossof of concave‐convex
concave‐convex
loss of concave-convex structures
structures and
andfin
structures finstructures
structures isislarger,
and fin structureslarger,which
which
is larger,isisdue
due to
tothe
which theis due
existence
existence of the
of the fin
to the existence fin increasing
ofincreasing the spoiler
the spoiler
the fin increasing effect.
theeffect. The pressure
Theeffect.
spoiler pressure Theloss
loss of cooling
of cooling
pressure water
losswater will
willdi‐
of cooling di‐water
rectly
will affect
affect the
rectlydirectly the energy
the consumption
energy
affect consumption
energy of
of the
consumption the pump.
of theWhen
pump. When
pump. the
the pressure
When the loss
pressure loss increases,
pressure increases, the
the
loss increases,
energy
energy consumption
consumption
the energy consumption of
ofthe
thepumpof thewill
pump will
pump also
alsoincrease,alsoand
increase,
will and the
therisk
increase, of
riskandofcoolant
coolant
the risk leakage
leakage
of coolantwill
willalso
also
leakage
increase.
increase.
will Combined
alsoCombined
increase. with with the
Combined pressure
the pressure distribution
with distribution
the pressure and
and junction temperature
junction temperature
distribution and junction distribution,
distribution,
temperature
considering
considering
distribution, that
that the
the design
designthat
considering of
of concave–convex
concave–convex structures
structures will
the design of concave–convex will increase
increase the
structuresthe width
width of
of the
will increase the the
cross‐sectional
cross‐sectional area
area so
so as
as to
to increase
increase the
the overall
overall volume
volume of
of the
the module,
module, in
in addition,
addition, com‐
com‐
width of the cross-sectional area so as to increase the overall volume of the module, in
pared
paredwith
withother
otherstructures,
structures,the thefinfinstructure
structurehas hasgood
goodfluid
fluidresistance,
resistance,so soititisisundoubtedly
undoubtedly
aagood
goodchoice
choiceto toincrease
increasethe thespoiler
spoilerfinfinininthe
theflow
flowchannel.
channel.
Micromachines 2022, 13, 554 12 of 15

Micromachines 2022, 13, x 13 of 16

Micromachines
Micromachines2022, 13,13,
2022, x x addition, compared with other structures, the fin structure has good fluid resistance,
1313of of1616so it is
undoubtedly a good choice to increase the spoiler fin in the flow channel.

18 rectangular
1818 rectangular
rectangular
16 concave-convex
1616 concave-convex
concave-convex
fin
loss/MPa
14 finfin
Pressure loss/MPa
loss/MPa
1414
12
1212
10
1010
Pressure
Pressure

8
88
6
66
4
44
2
22
4 6 8 10 12 14 16 18 20
4 4 6 6 8 8 1010 1212 1414 1616 18
-118
2020
water flow rate/Lꞏmin
-1
water flow
water flowrate/Lꞏmin
rate/Lꞏmin-1
Figure
Figure 14.
14.Relations
Relationsbetween
between water flow
water rate
flow andand
rate pressure lossloss.
pressure
Figure 14.14.
Figure Relations between
Relations between water
waterflow
flowrate and
rate pressure
and loss
pressure loss
5.3. Analysis
5.3. AnalysisofofFin FinStructure
Structure
5.3.
5.3. Analysis
Analysis of of
FinFinStructure
Structure
Fromthe
From thesimulation
simulationdata data inin Section
Section 5.2,5.2,
thethe maximum
maximum junction
junction temperature
temperature of theof the
From
Fromthe thesimulation
simulation data
dataininSection
Section 5.2,
5.2,the
themaximum
maximum junction
junction temperature
temperature of the
module
module appears
appears ininthe
theposition
position of of
thetheSBDSBD chip,
chip, andand
the the fin
fin also also influences
influences theofmaximum
the maximum
the
module
module appears
appears inin
thetheposition
position ofof
the
theSBDSBD chip,
chip, and
and the
thefinfin
also
alsoinfluences
influences the
the maximum
maximum
junction temperature
junction temperatureofofthe themodule.
module.The The three
three finfin structures
structures studied
studied for for
thisthis
paperpaper
werewere a
junction
junctiontemperature
temperatureofofthe themodule.
module.The Thethree
threefinfinstructures
structuresstudied
studiedfor forthis
thispaper
paperwere
were
aflat
flatfin,
fin,a asinusoidal
sinusoidalcorrugated
corrugated fin,
fin, and
and aa triangular corrugated
triangular corrugated fin.
fin. The
The finstructures
fin structures are
a aflat
flatfin,
fin,a asinusoidal
sinusoidalcorrugated
corrugatedfin, fin,and
anda atriangular
triangularcorrugated
corrugatedfin. fin.TheThefinfinstructures
structures
are shown in
shown in Figure 15. Figure 15.
are
are shown
shown inin
Figure
Figure 15.15.

Figure 15. Three different structures: (a) Flat fin, (b) Sinusoidal corrugated fin, (c) Triangular corrugated
Figure
Figure
Figure 15. Three
15. Three different
different structures:
structures: (a) Flat fin, (a) Flat fin, (b)
(b) Sinusoidal Sinusoidal
corrugated corrugated
fin, (c) fin, (c) Triangular
Triangular corrugated
fin. 15. Three different structures: (a) Flat fin, (b) Sinusoidal corrugated fin, (c) Triangular corrugated
fin.corrugated fin.
fin.
The thickness of the fins was set to 2 mm, the number of fins was 28, the inlet tem‐
TheThe
The thickness
thickness
thickness ofthe
ofofthe the
fins fins
fins waswas
was set
toto2to2mm,
setset 2mm,
mm,the the
thenumber number
number of
ofoffinsfins
was
fins waswas 28,
28,28,the
thethe inlet
inlet tem‐
inlet tem‐tempera-
perature was◦ 25 °C, and the flow rate was 16 L∙min −.−1
−1 . Except for the structural form of the
1Except
ture
perature was
was2525 C,
°C,and
and the
the flow
flow rate
rate was 16 L · min
L∙min −1 . Exceptforfor
the
perature was 25 °C, and the flow rate was 16 L∙min Except for the structural form of thethe structural
structural formform
of of
the the fins,
fins, other boundary conditions were the same. The geometric models of the three fin
fins, other
other boundary
boundary conditions
conditions were
were thethe
same.same. The
The geometric
geometric models
models
fins, other boundary conditions were the same. The geometric models of the three fin of of
the the three
three fin fin
structures
structures are simulated respectively, and the maximum junction temperatures of the
structures
structures are
aresimulated
are simulated respectively,
respectively,
simulated and
andthe
and the maximum
respectively, themaximum
junction junction
maximum junctiontemperatures
temperatures ofofthe
of the three
temperatures structures
the
three structures are shown in Figure 16.
three
threestructures
structures
are shown are shown
are shown
in Figure in Figure
16. in Figure 16.16.

87
8787
Temperature/℃
Junction Temperature/℃

86
JunctionTemperature/℃

8686
85
8585
84
8484
83
8383
82
Junction

8282
81
8181
80
8080
flat sinusoidal triangular
flat
flat sinusoidal triangular
sinusoidal triangular
corrugated corrugated
corrugated corrugated
corrugated corrugated
Figure
Figure 16.
16. Maximum
Maximum junction temperature
junction corresponding
temperature to three
corresponding tofin fin structures.
three fin structures.
Figure 16.16.
Figure Maximum
Maximumjunction temperature
junction corresponding
temperature toto
corresponding three
three finstructures.
structures.
Micromachines 2022, 13, 554 13 of 15

Micromachines 2022, 13, x 14 of 16

It can be seen from the simulation that under the same boundary conditions, the
heat dissipation effect of the sinusoidal corrugated fins is the best, followed by that of the
It can be seen from the simulation that under the same boundary conditions, the heat
triangular corrugated fins, and the straight fins are the worst. The reason is that under
dissipation effect of the sinusoidal corrugated fins is the best, followed by that of the trian‐
the premise of ensuring the same length of the fins, the “folds” of the corrugated fins will
gular corrugated fins, and the straight fins are the worst. The reason is that under the prem‐
increase the convective heat transfer area, and will generate small vortices between the
ise of ensuring the same length of the fins, the “folds” of the corrugated fins will increase
fins, increasing the degree of turbulence, thereby enhancing the heat dissipation effect. The
the convective heat transfer area, and will generate small vortices between the fins, increas‐
areathe
ing of degree
the triangular corrugated
of turbulence, fins
thereby has a relatively
enhancing the heat small increase,
dissipation but
effect. hasarea
The little
of effect
the on
triangular corrugated fins has a relatively small increase, but has little effect on the pressure flow
the pressure drop, and is relatively easy to manufacture, which is suitable for small
heat dissipation.
drop, and is relatively easy to manufacture, which is suitable for small flow heat dissipation.

5.4. Analysis
5.4. AnalysisofofFin
FinThickness
Thickness
Duetotothe
Due thespace
space constraints
constraints of the
of the IGBTIGBT module,
module, the number
the number of fins of
wasfins
setwas
fromset16 from
16
to 32 groups for simulation, the fin structure was sinusoidal corrugated fins, and the thick‐ the
to 32 groups for simulation, the fin structure was sinusoidal corrugated fins, and
thickness
ness of theof thewas
fins finsset
wasto 2set
mm.to 2The mm. The obtained
obtained relationships
relationships between between
the number theofnumber
fins of
fins and
and the maximum
the maximum junction
junction temperature
temperature of the of theare
chips chips are shown
shown in Figure in 17.
Figure
The 17.
dataThe
in data
in the
the table
table showshowthatthat
whenwhenthe the
numbernumber of fins
of fins increases,
increases, the maximum
the maximum temperature
temperature of theof the
IGBT decreases.
IGBT decreases.The Thereason
reason is is that
that thethe number
number of fins
of fins decreases
decreases and and the convection
the convection heat heat
transferarea
transfer areaincreases,
increases,thereby
thereby improving
improving thethe heat
heat dissipation
dissipation performance.
performance. However,
However, an an
excessivenumber
excessive numberofoffins finswill
will increase
increase thethe pressure
pressure drop,drop,
andand the flow
the flow rate rate will decrease
will decrease
when the
when theflow
flowraterateofofthe
thewater
water inlet remains
inlet remains unchanged,
unchanged, which in turn
which will will
in turn weaken the the
weaken
heat dissipation effect. Therefore, increasing the number of fins must be
dissipation effect. Therefore, increasing the number of fins must be carried out undercarried out under
the pressure
pressuredrop droprequirements.
requirements.

94
Junction Temperature/℃

92
90
88
86
84
82
80
14 16 18 20 22 24 26 28 30 32
number of fins
Figure
Figure 17. Relationshipsbetween
17.Relationships betweenthethe group
group of fins
of fins andand junction
junction temperature.
temperature.

6. Conclusions
6. Conclusions
To improve
To improvethe thecooling
coolingperformance
performance of the
of the IGBTIGBT module
module usedused in motor
in motor controllers,
controllers,
the internal
internalthermal
thermalresistance
resistanceand external heat dissipation structure of the module were were
and external heat dissipation structure of the module
analyzed,
analyzed, andand three flow channel
channel structure models of water-cooled
water‐cooled heatsinks
heatsinks are proposed.
pro‐
Through the ANSYS Workbench finite element simulation
posed. Through the ANSYS Workbench finite element simulation software, software, thethe
relationship
relation‐ be-
tween
ship the junction
between temperature
the junction of theofIGBT
temperature module
the IGBT and and
module the pressure drop
the pressure of the
drop cooling
of the
coolinginwater
water in the
the three three models
models within within
the flow therange
flow of
range min−L∙min
7–20ofL·7–20 1 was−1 was simulated,
simulated, and each
and each model
selected selectedwas
model wastotested
tested verifyto the
verify the of
effect effect
theof the selected
selected modelmodel
on theon cooling
the cooling
effect of
effect of the
the IGBT, IGBT,
and the and the following
following conclusions
conclusions were obtained:
were obtained:
1) The
(1) Thefinite
finiteelement
elementsimulation
simulationsoftware waswas
software used to perform
used numerical
to perform calculations
numerical calculations
on the IGBT module and its heat dissipation structure. The simulation
on the IGBT module and its heat dissipation structure. The simulation results results directly
directly
reflect
reflectthe
thefluid
fluidflow
flowand
andtemperature
temperature distribution, which
distribution, can can
which provide a theoretical
provide a theoretical
basis
basisforforthe
theoptimal
optimal design of of
design thethe
heatsink structure.
heatsink structure.
(2) The result of a numerical calculation based the
2) The result of a numerical calculation based on coupling
on the fieldfield
coupling shows that the
shows thatfluid
the fluid
can take away the heat generated by high‐power electronic devices during
can take away the heat generated by high-power electronic devices during operation operation
so that the junction temperature of the device during operation is within the allowable
Micromachines 2022, 13, 554 14 of 15

range. The use of a water-cooled heatsink can improve the reliability and safety of
the device, and the greater the flow rate of the water inlet, the more obvious the heat
dissipation effect.
(3) The water-cooled heatsink mainly realizes the heat dissipation of high-power elec-
tronic devices through convective heat transfer. The heat transfer area and shape of
the heat exchange surface, as well as the fluid medium and flow conditions, are the
main factors that affect convective heat transfer. Therefore, at the same flow rate, the
junction temperature of the optimized IGBT model is lower than before optimization.
(4) Increasing the contact area between the fins and the water flow can improve the
heat dissipation efficiency. Correspondingly, too many fins will increase the pressure
drop. When the flow rate of the water inlet is constant, the internal flow rate will
decrease, which in turn will reduce the heat dissipation effect. Therefore, a reasonable
distribution of fins is very important.

Author Contributions: Conceptualization, L.T. and P.L.; data curation, C.S.; formal analysis, P.X. and
L.Y.; methodology, L.T. and H.Q.; supervision, P.L.; writing—original draft, L.T.; writing—review
and editing, P.L. All authors have read and agreed to the published version of the manuscript.
Funding: This research was financially supported by the Natural Science Foundation of China (Grant
No. 61571245 and No. 61474067).
Conflicts of Interest: The authors declare no conflict of interest.

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