Radiation Physics and Chemistry 179 (2021) 109208

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Radiation Physics and Chemistry

journal homepage: www.elsevier.com/locate/radphyschem

Effect of voltages on Ray linear attenuation coefficients for some T

semiconductors
Burcu Akçaa,∗, Bekir Gürbulakb, Salih Zeki Erzeneoğlub
a
Ardahan University, Department of Medical Services and Techniques, Ardahan Health Services Vocational School, Ardahan, Turkey
b
Atatürk University, Department of Physics, Faculty of Sciences, Erzurum, Turkey

ARTICLE INFO ABSTRACT

Keywords: In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of ray linear at­
Bridgman/stockbarger tenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2
EDXRFS semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the
Semiconductor crystal energy 59.54 keV. Gamma-rays of 241Am were detected by using a high-resolution Si(Li) detector and, energy
Linear attenuation coefficient
dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se,
GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors were grown by the Bridgman-Stockbarger method. There are no
cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly
cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and
discussed in this study.

1. Introduction
Binary semiconductor compounds have attracted the technological
interest owing to their promises for practical application in the areas of
visible and infrared light-emitting diodes, infrared detectors, optical
parametric oscillators, nonlinear optics, solar cells, optical frequency
conversion, second harmonic generation devices and many other
electro-optical devices. The most characteristic feature of the III-VI
layered family of semiconductors is the existence of layers (Pellicer-
Pores et al., 2002). The linear attenuation coefficients are one of the
important parameters explaining the interaction of matter and radia­
tion. The greatness of linear attenuation coefficients depends on the
incident photon energy, the atomic number and the density of the
matter. The linear attenuation coefficient of a matter can be measured
experimentally using the application of Lambert– Beer's law with
narrow beam geometry. It is very important to determine such a basic
parameter correctly. Linear attenuation coefficients use especially in
areas such as nuclear medicine, radiation dosimetry, nuclear diag­
nostics (computerized tomography scans, etc.) and X-ray fluorescence
studies and radiation biophysics (Gupta et al., 2013).
In the literature, it is possible to find many studies on and X-ray
linear attenuation coefficients. Baltej et al. (2011) have measured linear
attenuation coefficients of archaeological samples and experimental
values have compared with XCOM and FFAST theoretical values. Tupe
et al. (2012) have measured mass and linear attenuation coefficients of
silver in the energy range 360–1330 keV energy. Gupta et al. (2013)
have measured by using the Advanced Two Media (ATM) method linear
attenuation coefficient of La, Pr, Nd, Gd, Tb, Ho, Er, Mo, Ag, Sn, W, and
Pb at 59.54 keV energy. Böke (2014) has computed linear attenuation
coefficients of liver, kidney, muscle, and fat in the energy range
1–150 keV. Mousa et al. (2017) have measured X-ray linear attenuation
coefficients of Plastic, Plexiglas, Silicone Rubber, and Paraffin wax.
Soares et al. (2020) have measured linear attenuation coefficients for
breast tissue, adipose tissues, glandular tissue at 12–50 keV energy.
Ashkhasi (2017) and Ashkhasi et al. (2017) have performed structural
studies of the GaSe and GaSe:Cd by using an X-ray diffractometer,
Scanning electron microscopy (SEM) and energy dispersive X-rays
techniques. Şata (2017) has performed structural and morphological
characterization of GaTe and GaTe:Cd using X-ray diffraction (XRD),
scanning electron microscopy (SEM), energy X-ray spectroscopy and
atomic force microscopic (AFM) techniques. Akça and Erzeneoğlu
(2016) have measured linear attenuation coefficients for compounds of
some essential major elements. Akça et al. (2015) have measured
gamma-ray transmission factors for some semiconductor crystals at
various annealing temperatures and time.
In the present work, the change according to the different voltages
(0, 5, 10, 15, 20 and, 25 V) of ray linear attenuation coefficients for
GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and

∗
Corresponding author. .
E-mail address: burcuakca@ardahan.edu.tr (B. Akça).

https://doi.org/10.1016/j.radphyschem.2020.109208
Received 6 May 2020; Received in revised form 18 September 2020; Accepted 22 September 2020
Available online 28 September 2020
0969-806X/ © 2020 Elsevier Ltd. All rights reserved.
B. Akça, et al.
GaTe0.8Se0.2 semiconductors have been measured by using an ex­
tremely narrow collimated-beam transmission method at energy of
59.54 keV. According to the literature research we conducted, this
study is very important in terms of creating the first experimental data.
It contains data that will be the basis for similar studies. The aim of our
study is to determine how the radiation interaction changes in the
voltage changes of semiconductors with wide usage areas. In addition,
it was tried to form the basis of the question of how semiconductors,
which have an important place in electronics, will react to radiation
with varying voltage while adapting to technology.
2. Theory
The Lambert–Beer law for a parallel and monoenergetic gamma ray
beam passing through matter reads:
I = I0e µt (1)
When gamma-ray beam passes through an absorber, it is attenuated.
The degree of attenuation depends on the scattering and various at­
tenuation and scattering processes. The linear attenuation coefficient μ
(cm−1) can be derived from the Lambert-Beer law;
ln (I / I0)
µ=
t (2)
where I0 and I are the non attenuated and attenuated photon intensities,
respectively. and t (cm) is the thickness of the material.
3. Experimental process
GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6,
and GaTe0.8Se0.2 semiconductors were grown by the Bridgman-
Stockbarger method in our current crystal growth laboratory. These
semiconductors have been annealing at a temperature of 300 °C for
30 min. These semiconductors are solid form. The annealing furnace is
shown in Fig. 1. After, these semiconductors were contacted to apply a
voltage (0, 5, 10, 15, 20 and, 25 V) -rays of Am241point source were
detected with a high-resolution Si(Li) detector and using EDXRFS. The
Si (Li) detector has an active diameter of 3.91 mm, an active area of
12 mm2 and 5.9 keV, and an FWHM (Full Width at Half Maximum) of
160 eV. The detector has a 0.025 mm thick beryllium window to pre­
vent surface contamination from outside. The data were collected into
4096 channels of a multichannel analyzer and the spectra were col­
lected for 1800 s. Measurement time (1800 s) has been determined as
the optimum time when the spectrum has been best observed. The
schematic arrangement of the experimental setup used in the present
work is shown in Fig. 2. The typical spectra of 59.54 keV gamma-ray
transmissions through GaTe (0, 10, 15, 20 and, 25 V applied) are shown
in Fig. 3.
Fig. 1. Annealing furnace.
2
Radiation Physics and Chemistry 179 (2021) 109208
4. Results and discussion
Our study aims to investigate the variation of -ray linear at­
tenuation coefficient with voltage for semiconductor crystals (GaSe,
GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and
GaTe0.8Se0.2), which is one of the important parameters that involve the
interaction of matter and radiation.
The structural and lattice parameters of the undoped GaSe, GaTe,
and GaSe:Cd, GaTe:Cd semiconductors were analyzed by XRD method
using Cu-Kα radiation with the wavelength of λ = 1.54050 Å. The
values of 2θ were altered between 10 deg and 90 deg with the step of
0.1 deg/sec. It is found that the GaSe and GaSe:Cd crystals have a
hexagonal structure, quite close to 2θ peak values. Cd doping causes a
significant decrease in the XRD peak intensity (Ashkhasi, 2017;
Ashkhasi et al., 2017). XRD patterns of GaSe and GaSe:Cd semi­
conductors as-grown are shown in Fig. 4. XRD spectra of GaTe and
GaTe:Cd semiconductors as-grown is shown in Fig. 5. According to XRD
results, it was observed that the amplified samples had monoclinic
crystal structure and Cd doping increased the peak intensities and
partially changed the XRD peaks but did not cause the change in
structure for GaTe, GaTe:Cd (Şata, 2017).
The variation with different voltages (0, 5, 10, 15, 20 and, 25 V) of
the -ray linear attenuation coefficients are given in Fig. 6 and Table 1
for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6
and GaTe0.8Se0.2.
It is observed from Fig. 6 and Table 1 that the linear attenuation
coefficient for GaSe and GaSe:Cd is increased by voltage up to 10 V. The
linear attenuation coefficient and voltage show a variation similar to
the plateau region from 10 V to 25 V. In general, for the doped and un-
doped GaSe, we can say that the linear attenuation coefficient with
voltage increase tends to increase. That is the gamma-ray absorption
rate increases as the voltage increases for doped and un-doped GaSe.
GaSe semiconductor crystal is used in photodiode and photoresistor
applications due to its electrical and photoelectric properties for mon­
itoring high energy rays as a detector. Therefore, the characteristic of
the change in gamma-ray absorption with the applied voltage is very
important. Looking at Fig. 6 and Table 1, there is a big decrease in the
linear attenuation coefficient for GaTe and GaTe:Cd up to 5 V. There is
a change between 5 V and 25 V in the form of an increase and a de­
crease. In general, for GaTe and GaTe:Cd, we can state that the linear
attenuation coefficient with voltage increase tends to decrease. That is
the gamma-ray absorption rate decreases as the voltage increases for
GaTe and GaTe:Cd. GaTe semiconductor crystal is widely used in the
construction of radiation detectors and touch sensors. It is therefore
important to determine absorption change with voltage. Considering
GaSe and GaTe, atomic numbers are 31 for Ga, 34 for Se, and 52 for Te.
The absorption event is closely related to the atomic number. We can
say that materials with large atomic numbers are generally more ab­
sorbent. Thus, it is more affected by gamma-rays. But when we look at
GaSe and GaTe, the situation is a little different. With the effect of
voltage, GaSe showed a more absorbing effect than GaTe. We can say
that for these two semiconductors, the voltage changes the absorption
characteristic.
When we look at Fig. 6 and Table 1 for the Ga0.9In0.1Se, the voltage,
and linear attenuation coefficient change with a fluctuation in the form
of increase and decrease. When we look at Fig. 6 and Table 1, an in­
crease in linear attenuation coefficient for GaTe0.4Se0.6 and GaTe0.8Se0.2
up to 5 V is observed. Furthermore, a slight decrease in 25 V is ob­
served. In general, for the GaTe0.4Se0.6 and GaTe0.8Se0.2, we can say
that the linear attenuation coefficient with voltage increase tends to
increase. That is the gamma-ray absorption rate increases as the voltage
increases for GaTe0.4Se0.6 and GaTe0.8Se0.2. Considering Ga0.9In0.1Se,
GaTe0.4Se0.6 and, GaTe0.8Se0.2 the atomic numbers are 49 for In, 52 for
Te, 31 for Ga, and, 34 for Se. In this case, the GaTe0.4Se0.6 and,
GaTe0.8Se0.2 should be more absorbent for 0 V. However, contrary to
what is expected when the voltage increases, Ga0.9In0.1Se has become
B. Akça, et al. Radiation Physics and Chemistry 179 (2021) 109208

Fig. 2. Experimental geometry.

Fig. 3. Example spectra for GaTe.

Fig. 5. XRD spectra of GaTe and GaTe:Cd semiconductors as-grown (Ashkhasi,

more absorbent. 2017; Ashkhasi et al., 2017; Şata, 2017).
According to these results, we can say that the voltage change
causes a change above the linear attenuation coefficient for GaSe,
material. These results obtained in our study give an idea about the
GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and
gamma-ray shielding of semiconductors and semiconductor containing
GaTe0.8Se0.2. Applying different voltages to the material is an important
materials.
factor that can completely change the absorption characteristic of the

Fig. 4. XRD patterns of GaSe and GaSe:Cd semiconductors as-grown (Ashkhasi, 2017; Ashkhasi et al., 2017).

3
B. Akça, et al. Radiation Physics and Chemistry 179 (2021) 109208

Fig. 6. ray linear attenuation coefficients versus voltage for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2.

Table 1
γ−ray linear attenuation coefficients at different voltages for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2.
Voltages (V) μGaSe μGaSe:Cd μGaSe:Sn μGaTe μGaTe:Cd μGa0.9In0.1Se μGaTe0.4Se0.6 μGaTe0.8Se0.2

0 546.712 4.853 2.126 1.399 1.909 0.445 0.122 0.237

5 568.793 14.303 2.048 1.024 1.130 8.235 0.212 1.029
10 579.503 25.462 2.495 1.159 1.131 9.014 0.151 1.011
15 577.909 27.526 2.468 0.910 1.061 9.981 0.206 1.132
20 579.692 27.510 2.359 0.984 1.099 11.279 0.113 1.240
25 580.731 27.733 2.727 0.933 1.008 11.103 0.139 1.216

The present data indicate that, for a number of semiconductors the
irradiation with gamma-rays induce changes in the linear attenuation
coefficient, while changing voltage causes alteration of their absorption
properties. This fact indicates differences in input of gamma-rays on
semiconductors from that of ions. In the later case, as a number of
studies indicate, the irradiation of semiconductors with ions causes very
often substoichiometry of certain elements, structural modification and
partial amorphization of the topmost surface layers, changes in the
energy distribution of the electronic states within the valence-band
region (Ramana et al., 2007; Atuchin et al., 2008; AtuchinV. et al.,
2008).
In our study, the measurement was repeated at least three times to
minimize experimental errors. In the study, error for the gamma peak
area is ( 1%), error for the thickness of the material is ( 0.95%) and,
counting statistics error is ( 1.25%).
terms of obtaining important information about the characteristic of the
substance. If we assess in this regard the experimental geometry we use
in our study enabled us to obtain very precise results. According to the
results obtained, the voltage applied to the semiconductors caused
changes in their interaction with the gamma-ray. This study is a re­
source for other studies. The literature should be enriched by doing
similar studies. Such studies can be expanded by doing different
semiconductors, different energies, different voltages and factors, dif­
ferent geometries and different parameters.
Declaration of competing interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influ­
ence the work reported in this paper.

5. Conclusion Acknowledgments

GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6,
and GaTe0.8Se0.2 semiconductors were grown by the Bridgman-
Stockbarger method in our current crystal growth laboratory. AIIIBVI
and AIIIBIIICVI have specific impurities arising from its crystal structure.
These must be considered as impurity levels. When the transition ele­
ment is doped into AIIIBVI single crystals, these elements are eliminated
from the crystal during the growth process. Samples were cleaved along
the cleavage planes (001). The ingots have no cracks and voids on the
surface in ingots. There is no process to polish and clean treatments at
cleavage faces of these samples because of the natural mirror-like
cleavage faces. It is known that obtaining accurate and precise results,
especially in the interaction of rays and matter, is of great importance in
This work was supported by the Atatürk University Research Fund,
Project No: Project ID: 6683, 8217 and FBG-2018-6423.
Appendix A. Supplementary data
Supplementary data to this article can be found online at https://
doi.org/10.1016/j.radphyschem.2020.109208.
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