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Ka Band Point Contact Detector Diodes
Ka Band Point Contact Detector Diodes
Ka Band Point Contact Detector Diodes
Point Contact
Description Features
This MicroMetrics 1N series of Point • Broadband Operations
Contact Detector diodes is designed
for applications through Ka-Band. • Bias Not Required
These diodes employ epitaxial silicon
optimized for high tangential signal Packaging
sensitivity (TSS), and are suitable for • Glass or Cartridge
use in waveguide, coaxial and stripline
applications. Being point contact
diodes, they are efficient detectors not
requiring the use of bias. Devices in
this series are available in glass or
cartridge packaging.
Applications
This 1N series of Point Contact
Detectors is suitable for use in wave-
guide, coaxial and stripline applications
Typical Performance
10000.0 10000.0
100.0 100.0
VOLTAGE OUTPUT
VOLTAGE OUTPUT
50.0 50.0
(mV)
RL = 10Ω
(mV)
20.0 20.0
RL = 10KΩ
10.0 10.0
50µa
5µa
5.0 5.0
RL = 1Ω
2.0 2.0
5µa
1.0 1.0
0.50 0.50
Test Conditions: F = 9.375 GHz Test Conditions:
a
50µ
F = 9.375 GHz
0.20 0.20 DC Bias = 0
5µa
0.10 0.10
-30 -25 -20 -15 -10 -5 0 5 10 15 20 -30 -25 -20 -15 -10 -5 0 5 10 15 20
POWER INPUT POWER INPUT
(dBm) (dBm)
Point Contact
Diodes
Electrical Characteristics
Maximum Ratings
Operating Temperature -55°C to + 150°C
Storage Temperature -65°C to + 200°C